JP3275430B2 - Peripheral exposure apparatus, element manufacturing method and element - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a peripheral exposure apparatus for exposing a peripheral portion of a substrate such as a semiconductor wafer for manufacturing semiconductor devices.
And device manufacturing method for exposing peripheral portion and manufacturing thereof
The present invention relates to an element manufactured by using a manufacturing method .

[0002]

2. Description of the Related Art In the process of manufacturing a semiconductor wafer, the periphery of a substrate is sometimes exposed to a predetermined exposure width (for example, about 1 to 7 mm) in order to prevent the resist from peeling off at the periphery of the substrate. As an apparatus used for this type of exposure, for example, as described in JP-A-4-72614,
Move the irradiation unit in the radial direction of the substrate according to the rotation position of the substrate so that the irradiation unit that irradiates the exposure light beam toward the periphery of the substrate and the exposure width of the substrate periphery by the exposure light beam match the target value And an exposure width control means for controlling the exposure width.

[0003]

In the above-described apparatus, the irradiation unit is moved along the peripheral shape of the substrate over the entire periphery of the substrate, and thus, for example, a substrate alignment called an orientation flat (hereinafter, referred to as OF). When the notch is formed, the irradiation portion follows the OF, and the exposure width is kept constant. When a small notch called a notch having a depth of about 1 mm is formed instead of the OF, or when a defect is formed in the peripheral portion of the substrate, the irradiation portion follows the notch or the defective portion in the same manner as described above. However, since these notches and missing portions are smaller than the OF, it is not necessary to follow the irradiated part. Rather, as a result of following the irradiated part, the exposed area of the peripheral portion of the substrate follows the shape of the notch or the like. It is more problematic to project toward the center and reduce the effective area of the substrate (for example, the area of a region where a pattern can be formed).

SUMMARY OF THE INVENTION An object of the present invention is to provide an edge exposure apparatus and an element manufacturing method capable of controlling a relative position between an exposure light beam and an edge portion of a substrate so that an exposure width is maintained at a target value only at a necessary position.
And a device manufactured by the method .

[0005]

Means for Solving the Problems A description will be given with reference to FIG.
Then, the invention of the present application provides an exposure light beam having a predetermined irradiation area.
By irradiating the peripheral portion of the photosensitive substrate with the
Applied to a peripheral exposure apparatus for exposing a portion of the
Relative relationship between the periphery of the substrate (1) and the irradiation area of the exposure light beam
Detecting means (1) for detecting relative position information relating to the position;
7, 30),The peripheral portion exposed by the exposure light beamof
The width of the region is maintained at a predetermined width from the edge of the photosensitive substrate (1).
To be detected by the detecting means (17, 30).
Based on the issued relative position information, the exposure light flux
A driver for relatively driving an irradiation area and the photosensitive substrate (1);
Steps (27, 30, 32) and the periphery of the photosensitive substrate (1)
Acquisition of outer shape information related to the shape of the part,
Dew on the periphery of the photosensitive substrate (1) based on the shape information
Identifying means (30) for identifying the light width maintenance unnecessary area is provided.
In the exposure width maintenance unnecessary area,Of the exposure light flux
The relative position information between the irradiation area and the photosensitive substrate (1)
Exposure by interrupting relative drive based onThe configuration is as follows. Ma
Another invention of the present application is an exposure light beam having a predetermined irradiation area.
By irradiating the peripheral portion of the photosensitive substrate with the
Applied to a device manufacturing method including a step of exposing a portion of a region.
AndPhase between the periphery of the photosensitive substrate (1) and the exposure light beam
Detects relative position information, which is information about position,Said
The width of the peripheral area exposed by the exposure light beam is
Maintain a predetermined width (M) from the edge of the substrate (1)
ToBased on the relative position informationIrradiation area of the exposure light beam
Area and the photosensitive substrate (1) are relatively driven, and
The peripheral portion based on outer shape information related to the shape of the peripheral portion;
The areas (A1, A3) not required to maintain the exposure width are specified (S
4) In the exposure width maintaining unnecessary areas (A1, A3)
IsBetween the irradiation area of the exposure light beam and the photosensitive substrate (1)
Exposure is performed by interrupting relative driving based on the relative information.What
In the above description, the configuration of the present invention and the configuration of
Has been described in association with the present invention, but this is
In order to facilitate understanding of the correspondence, the present invention will be described later.
It is not meant to be limited to the examples.

[0006]

According to the invention of the present application, the shape of the peripheral portion of the photosensitive substrate
Acquires external shape information related to
Based on the identification means, on the periphery of the photosensitive substrate
The exposure width maintenance unnecessary area is specified, and the exposure width maintenance unnecessary area is
In this case, the edge of the area of the photosensitive substrate exposed
Exposed without maintaining the width from the edge
You. According to another aspect of the present invention, an exposure light beam
The width of the peripheral area is set to a predetermined width from the edge of the photosensitive substrate.
In order to maintain, the irradiation area of the exposure light beam and the photosensitive substrate
Are driven relative to each other, and the shape of the
On the periphery of the photosensitive substrate based on the
The light width maintenance unnecessary area is specified, and
From the edge of the area of the photosensitive substrate that is
The peripheral area is exposed without maintaining the width at the specified width.
It is.

[0007]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS First, the principle of the present invention will be described with reference to FIG.
I will tell. The present invention is based on the exposure light beam 100 and the substrate 101.
When exposing by rotating relatively along the periphery of the plate 101,
The exposure width at the periphery of the substrate 101 is maintained at the target value M.
Half of the relative rotation between the substrate 101 and the exposure light beam 100
Relative position control means 102 for controlling the relative position in the radial direction
It is applied to a peripheral exposure apparatus for a substrate provided. And exposure
Prior to the above, the substrate 101 is detected by the outer shape information detecting means 103.
The outer shape information corresponding to the peripheral shape of
No need to maintain exposure width on the periphery of substrate 101 based on shape information
The area is detected by the unnecessary area detecting means 104. Exposure light
When the bundle 100 is located in the exposure width maintenance unnecessary area, the exposure width
The control amount of the relative position with respect to the deviation amount from the target value M is
Control characteristics of the relative position control means 102 so that
It is changed by the control characteristic changing means 105. Control characteristic change hand
Step 105 is based on the outer shape information outside the exposure width maintenance unnecessary area.
The control amount of the relative position in the exposure width maintenance unnecessary area
Control amount complementing means 105A to perform the control. System
In the control amount complementing means 105A, for example, the exposure width maintenance unnecessary area
Based on the outer shape information at two adjacent positions before and after
The control amount of the relative position in the light width maintenance unnecessary area is set. System
The control characteristic changing unit 105 controls the relative position in the exposure width maintenance unnecessary area.
Reduce the gain of the position control means to increase the relative position control amount.
It can also be compressed. Unnecessary area detection means 104 is an example
For example, the peripheral shape of the substrate 101 obtained based on the outer shape information
To determine whether or not it is an exposure width maintenance unnecessary area based on the degree of change
You. In this embodiment, the control unit 30 shown in FIG.
The above-described relative position control means 102 and external shape information detection means 1
03, unnecessary area detecting means 104, control characteristic changing means 10
5 and the control amount complementing means 105A. An embodiment of the present invention will be described below with reference to FIGS. FIG.
FIG. 1 shows a schematic configuration of an exposure apparatus according to the present embodiment, wherein 1 denotes a wafer to be exposed, 2 denotes a turntable (hereinafter abbreviated as a table) for holding the wafer 1 by suction, and 3 denotes a table 2 which is driven to rotate. A motor 4 to be driven, a rotation position detector such as a rotary encoder for outputting a signal corresponding to a rotation position of the motor 3, and a base 5 rotatably supporting the table 2. The motor 3 is mounted on the table 2 so that the wafer 1 rotates in a plane substantially perpendicular to the rotation axis of the motor 3.
Is driven to rotate. 6 is a light source using an ultra-high pressure mercury lamp, etc.
The illumination light enters the lens 11 via the elliptical mirror 7, the mirror 8, the shutter 9, and the wavelength selection filter 10, is collected on the end face of the optical fiber 12, and is guided to the irradiation unit 14. Reference numeral 13 denotes a drive unit for inserting the wavelength selection filter 10 into or out of the optical path. When the filter 10 is inserted into the optical path, illumination light in a wavelength region having high sensitivity to the resist of the wafer 1 is cut off. You. This filter 1
A light beam in a wavelength range cut at 0 is an exposure light beam, and a light beam that has passed through the filter 10, that is, a light beam that does not include the exposure light beam, is hereinafter referred to as a non-exposure light beam.

Reference numeral 15 denotes an aperture for shaping the illumination light beam 16 emitted from the irradiation unit 14 into a desired shape (in this embodiment, a rectangular shape), and 17 denotes a light receiving device which receives the illumination light beam 16 and outputs a signal corresponding to a light receiving state. And 18, the irradiation unit 14 and the light receiving unit 1
7 is a holder for holding the unit 7 integrally. The holder 18 is movable along a linear guide 21 attached to the base 5 together with the slider 22. When the holder 18 is moved closer to the wafer 1, the peripheral portion of the wafer 1 is positioned between the irradiation unit 14 and the light receiving unit 17. Enters. When the holder 18 is moved to a region farthest from the wafer 1, the dummy wafer 20 enters between the irradiation unit 14 and the light receiving unit 17. 19 is a holder 18
Is a position detector for detecting the position of the holder 18 when it is within a certain range from the left end position in the figure.

As shown in FIG. 3, a light receiving section 17 is provided with a pair of rectangular light receiving elements 17a extending in the moving direction of the holder 18 (in the direction of arrow S) and a predetermined distance from the edge of the illumination light beam 16 on the wafer 1 side. It has a pinhole-shaped edge sensor 17b arranged at a distance L and a light receiving element 17c arranged near the edge of the illumination light beam 16 on the side opposite to the wafer 1. The light receiving element 17a is partially covered by the peripheral portion of the wafer 1 or the edge 20a of the dummy wafer 20 in response to the movement of the holder 18, and the illumination light beam 16 (see FIG. ) Is output. The edge sensor 17b outputs a signal B having a different level depending on whether or not the illumination light beam 16 is received. The light receiving element 17c always receives the illumination light beam 16 on its entire surface regardless of the position of the holder 18, and outputs a signal C corresponding to the intensity of the illumination light beam 16.

As shown in FIG. 2, a moving block 23 attached to the lower surface of the slider 22 is constantly urged rightward in the figure by a spring (not shown), and rollers 25 and 26 are rotated in accordance with the rotational position of the rotating arm 24. Press in contact with one of Thus, when the rotary arm 24 is rotated by the motor 27, the moving block 23 moves on the linear guide 21 according to the rotation direction and the rotation amount, and the position of the holder 18 changes. The rotation position of the motor 27 is detected by a rotation position detector 28 such as a rotary encoder shown in FIG.

FIG. 4 is a block diagram of a control system of the exposure apparatus of the present embodiment. The control unit 30 outputs a drive signal to the drive circuits 31 and 32 to control the rotation of the motors 3 and 27, and outputs a drive signal to the drive unit 13 to control the operation of the filter 10. The control unit 30 includes motors 3, 27 output from the rotational position detectors 4, 28 as information for control.
, A signal corresponding to the position of the holder 18 output by the position detector 19, and a signal corresponding to the light receiving state output by the light receiving unit 17 are input, and control is performed based on these signals. The unit 30 performs various processes described below.
33 is an external memory of the control unit 30. The control unit 3
Information on the type of wafer 1 and exposure conditions is given to 0 by a command unit (not shown). This information includes information on the diameter of the wafer 1, the presence or absence of the OF, the shape and size of the OF, if any, the exposure amount of the wafer 1, and the target exposure width of the peripheral portion.

Next, the processing by the control unit 30 will be described with reference to FIGS.
This will be described with reference to FIG. In the following description, a case where the peripheral portion of the wafer 1 having the OF is exposed with a constant width M as shown in FIG. A first defect D1 that is long in the circumferential direction and a substantially V-shaped second defect D2 are provided at the peripheral portion of the wafer 1.
Is assumed to have occurred.

FIG. 6 is a flowchart showing a series of processing by the control unit 30. When the wafer 1 to be exposed is attracted to the table 2 and information about the type and exposure conditions is input, the processing shown in the figure is started. First, in step S1, the rotation speed of the motor 3 is calculated based on the signal C from the light receiving element 17c of the light receiving unit 17 so that exposure is performed with an exposure amount suitable for the resist on the wafer 1, and the calculation result is calculated. It is stored as speed information.

In step S2, a calibration process for measuring an output signal of the light receiving section 17 corresponding to the target exposure width M is performed. That is, the edge 20 of the dummy wafer 20
a, and gradually move the holder 18 toward the edge 20a.
Reaches the edge sensor 17b and the position detector 19 detects the position where the level of the signal B has changed. Then, the holder 18 is moved to the wafer 1 side or the opposite side by the difference between the target exposure width M and the distance L (see FIG. 3), and the signal Se of the light receiving element 17a at that time is divided by the signal C of the light receiving element 17c. The obtained value Se / C is stored as the reference signal Sb. Signal Se
Is used to eliminate the influence of a change in the signal Se due to a change in the intensity of the illumination light beam 16. Hereinafter, Se / C is referred to as an output signal from the light receiving unit 17 for convenience.

In step S3, first outer shape information corresponding to the peripheral shape of the wafer 1 is detected. The first outer shape information is obtained by fixing the holder 18 at a position where a part of the illumination light beam 16 overlaps with the peripheral edge of the wafer 1 and inserting the filter 10 into the optical path of the illumination light to convert the illumination light beam 16 into the non-exposure light beam. Is obtained by rotating the wafer 1 at a constant speed and detecting a change in the signal Se / C from the light receiving unit 17. At this time, the signal Se / C from the light receiving unit 17 changes according to the eccentric state of the wafer 1 with respect to the rotation center of the table 2 and the peripheral shape of the wafer 1. For example, in the wafer 1 of FIG. 5, as shown in FIG. 7A, the signal Se / C gradually changes according to the eccentric state of the wafer 1, and the regions A1 to A3 corresponding to the OF and the defects D1 and D2. And the light receiving element 17a
Is suddenly changed, and the signal Se / C is disturbed. The detected first outer shape information is stored in the memory 33.

In step S4, a process for detecting an exposure width maintaining unnecessary area in the peripheral portion of the wafer 1 is performed based on the first outer shape information detected in step S3. This processing will be described with reference to FIGS. As shown in FIG. 8, the control unit 30 reads out the first outer shape information stored in the memory 33 in step S401, and differentiates the first outer shape information in step S402. FIG. 7B shows an example in which the waveform of FIG. 7A is differentiated. In the following step S403, the outer shape change position of the wafer 1 is detected based on the waveform obtained by the differentiation processing. Since the eccentricity of the wafer 1 with respect to the table 2 is generally slight, a waveform obtained by differentiating the outer shape information largely changes in the positive or negative direction at a portion where the peripheral shape of the wafer 1 changes. Therefore, it is determined whether or not the absolute value of the differential value of the signal Se / C is equal to or greater than a predetermined threshold, and a position exceeding the threshold is determined as an outer shape change position.

In step S404, the outer shape change area An is identified based on the outer shape change position detected previously, and the area A
The central angle θn and the peak height dn of the differential value are obtained for each n.
In the next step S405, the center angle θ _{OF of the OF} (see FIG. 5) and the peak height d _OF of the differential value, which are given in advance as information on the wafer 1, are calculated, and the calculation result and step S4 are calculated.
The position of the OF is specified by comparing θn and dn for each outer shape change area obtained in 04. In the example of FIG. 7B, the second area A2 from the measurement start position is specified as the OF. The center angle θ _OF and the peak height d _OF are determined based on the shape and size of the OF and the first outer shape information detection processing (step S3 in FIG. 6).
And the rotation speed of the table 2 at step (1).

In the following step S406, the region An excluding the region A2 specified as the OF is specified as the exposure width maintenance unnecessary region, and the respective positions are stored. As a method of defining the position, for example, the position where the differential value is inverted in the region A2 set as the OF is set as the center position of the OF, and the exposure width maintaining unnecessary regions A1, A3 are measured at an angle measured counterclockwise from this position.
Can be represented. In the example of FIG. 7B, the region A1 corresponds to the first defect D1, and the region A3 corresponds to the second defect D2. After that, the exposure width maintenance unnecessary area detection processing ends, and the processing returns to the processing in FIG.

Although not shown in FIG. 8, the contact portion 45 with the claw for holding the wafer of the exposure apparatus is prepared for contact with the claw for holding the wafer.
When the exposure widths a to 45c are set to be larger than the target exposure width M, angles α1 to α3 from the center position of the OF of the contact portions 45a to 45c are given in advance as information relating to the wafer 1, and this information is detected. The positions of the contact portions 45a to 45c may be determined based on the position of the OF.

After the exposure width maintenance unnecessary area detection processing is completed, dummy tracking processing is performed in step S5. In this process, the wafer 1 is rotated at least once while the filter 10 is inserted in the optical path of the illumination light, and the reference signal Sb detected in the calibration process in step S2 is used.
The holder 18 according to the rotational position of the wafer 1 so that the deviation Sd between the (signal Se / C corresponding to the target exposure width M) and the current output signal Se / C from the light receiving unit 17 becomes zero.
Adjust the position of. When the contact portions 45a to 45c are provided, control is performed so that the deviation Sd becomes a predetermined value only in such portions. At the time of dummy tracking, the position of the holder 18 in the radial direction of the wafer 1 is detected based on the output signal of the rotation position detector 28, and the detection result is stored in the memory 33 in association with the rotation position of the wafer 1. Holder 18
Moves in the radial direction of the wafer 1 following the outer shape of the wafer 1, so that the data of the position of the holder 18 stored in the memory 33 changes according to the peripheral shape of the wafer 1. Less than,
This information is called second outline information.

After the completion of the dummy tracking processing, the outer shape information correction processing is performed in step S6. In this process, as shown in FIG. 7C, the exposure width adjustment area An in the waveform stored in the memory 33 is obtained based on the information on the exposure width adjustment area An detected in step S4, and the waveforms of these areas are obtained. To correct. This correction is performed so that the control amount of the position of the holder 18 with respect to the shift amount between the target exposure width M and the actual exposure width is compressed. In the example of FIG. 7 (c), for the region A3 in which the length occupied in the circumferential direction of the wafer 1 is relatively small, the second outer shape is formed so that two points P1 and P2 adjacent before and after the region A3 are connected by a straight line. Correct the information. The area A1 occupying a relatively long length in the circumferential direction of the wafer 1 is the area A1
The eccentricity state of the wafer 1 is calculated based on the change of the second outer shape information excluding A3 to A3, the change curve of the second outer shape information when there is no first defect D1 is estimated, and the original data is obtained. Replace with

After the correction of the second outline information, the flow advances to step S7 to perform exposure. In this exposure, the filter 10 is retracted from the optical path to turn the illumination light beam 16 into an exposure light beam, and the table 2 is rotated at the speed determined in step S1 while the corrected second outer shape stored in the memory 33 is stored. The position of the holder 18 is controlled so that the information matches the current position of the holder 18 detected by the rotation position detector 28.

According to the above-described processing, the position of the holder 18 is adjusted in accordance with the second outer shape information so that the actual exposure width matches the target exposure width M. Exposure width maintenance unnecessary area A1,
In A3, the second control amount of the position of the holder 18 with respect to the deviation amount between the target exposure width M and the actual exposure width is compressed.
Since the outer shape information is corrected, the exposure width maintenance unnecessary area A
1, a first defect D1 and a second defect D2
5, the followability of the holder 18 to the peripheral shape of the wafer 1 is reduced, and the actual exposure width becomes narrower than the target exposure width M, as shown in FIG. Thereby, useless reduction of the effective area of the wafer 1 is suppressed.

In this embodiment, the exposure width maintenance unnecessary area is selected based on the first outer shape information, and the second area is determined based on the result.
Is modified, the data may be modified by detecting the exposure width maintenance unnecessary area based on the second contour information obtained by the dummy tracking processing. When a wafer having a notch formed in place of the OF is an object to be exposed, all portions where the absolute value of the differential value of the outer shape information exceeds a predetermined threshold value, regardless of whether the notch is a defect or not, are recognized as exposure width maintenance unnecessary regions. Good. When detecting the exposure width maintenance unnecessary area, the external shape information does not necessarily need to be differentiated, and the exposure width maintenance unnecessary area may be specified from the waveform of the external shape information. If the amount of eccentricity of the wafer 1 is large and the exposure width maintenance unnecessary area cannot be specified by only one differentiation process, the differentiation process may be repeated twice or more.

In this embodiment, an apparatus for controlling the exposure width by comparing the second outer shape information obtained by the dummy tracking processing with the current position of the holder 18 is described as an example. However, the present invention is not limited to this. Instead, the present invention can be applied to an apparatus that performs exposure by controlling the position of the holder 18 so that the output signal from the light receiving unit 17 is constant. In this case, after the processing until the exposure width maintenance unnecessary area is obtained from the first outer shape information is performed in the same manner as in the present embodiment, the holder 18 in the exposure width maintenance unnecessary area is processed.
Is determined based on information on the shape and dimensions of the wafer 1 and the first outer shape information. When the exposure light beam enters the exposure width maintenance unnecessary area during exposure, the holder 18 based on a signal from the light receiving unit 17 is used. May be interrupted and the position of the holder 18 may be adjusted by a predetermined control amount.

In order to compress the control amount of the position of the holder 18 with respect to the deviation amount between the target exposure width M and the actual exposure width in the exposure width maintenance unnecessary area, only the holder 1 needs to be used for the exposure width maintenance unnecessary area.
The response of the holder 18 to a change in the outer shape of the wafer 1 may be reduced by reducing the gain of the control system at the position 8.

In the above-described embodiment , the relative rotation between the exposure light beam and the substrate can be obtained by rotating the exposure light beam side along the substrate. The relative movement in the radial direction with respect to the relative rotation between the exposure light beam and the substrate can also be obtained by moving the substrate. The substrate is not limited to a circle but may be a polygon.

[0028]

According to the present invention, based on the outer shape information,
Then, the specifying means specifies the exposure width maintenance unnecessary area. Yo
For example, when the driving unit is exposed to the
The width of the edge area is maintained at a predetermined width from the edge of the photosensitive substrate.
The edge of the photosensitive substrate and the exposure light beam irradiation area
The effective area of the photosensitive substrate is reduced even when the
Exposing the peripheral area of the photosensitive substrate without causing
Becomes possible. According to another invention of the present application, a photosensitive substrate
The area not required to maintain the exposure width on the periphery of the
In areas where maintenance is not required, the area of the photosensitive substrate that is
The width from the edge of the area is not maintained at the specified width
Some areas are exposed. Therefore, the effective area of the photosensitive substrate
Exposure of the peripheral area of the photosensitive substrate without reduction
It becomes possible.

[Brief description of the drawings]

FIG. 1 illustrates the principle of the present invention.

FIG. 2 is a diagram showing a schematic configuration of an exposure apparatus according to an embodiment of the present invention.

FIG. 3 is a diagram showing details of a light receiving unit in FIG. 2;

FIG. 4 is a block diagram of a control system of the exposure apparatus of FIG .

FIG. 5 is a view showing an example of a wafer to be exposed by the exposure apparatus of FIG. 2;

FIG. 6 is a flowchart showing a processing procedure in a control unit in FIG. 4;

FIG. 7 is a diagram for explaining processing in the control unit of FIG. 4;
FIG. 7A is a diagram illustrating first outline information, FIG. 8B is a diagram illustrating a waveform obtained by differentiating the waveform of FIG. 7A, and FIG. 7C is a diagram illustrating second outline information.

FIG. 8 is a flowchart showing a procedure of an exposure width maintenance unnecessary area detection process in FIG. 6;

Continuation of front page (56) References JP-A-5-217887 (JP, A) JP-A-4-72614 (JP, A) JP-A-4-65116 (JP, A) JP-A-3-11726 (JP) , A) (58) Field surveyed (Int. Cl. ⁷ , DB name) H01L 21/027 G03F 7/20 521

Claims (11)

(57) [Claims] 1. A peripheral exposure device for exposing a peripheral area of a photosensitive substrate by irradiating an exposure light beam having a predetermined irradiation area to the peripheral area of the photosensitive substrate, wherein the peripheral area of the photosensitive substrate and the exposure are exposed. Detecting means for detecting relative position information which is information related to a relative position of the light beam with respect to the irradiation area; and maintaining a width of the peripheral area exposed by the exposure light beam at a predetermined width from an edge of the photosensitive substrate. A driving unit that relatively drives the irradiation area of the exposure light beam and the photosensitive substrate based on the relative position information detected by the detection unit; and outer shape information related to a shape of a peripheral portion of the photosensitive substrate. Specifying means for specifying an exposure width maintenance unnecessary area on the peripheral portion of the photosensitive substrate based on the obtained outer shape information, wherein the exposure width maintenance unnecessary area includes the exposure light
Based on the relative position information between the bundle irradiation area and the photosensitive substrate.
A peripheral exposure apparatus, wherein the exposure is performed by interrupting relative driving . 2. The peripheral exposure apparatus according to claim 1 , wherein the exposure width maintaining unnecessary area is an area where a defect or a notch is formed on the peripheral portion of the photosensitive substrate. Peripheral exposure device. 3. The peripheral edge exposure apparatus according to claim 1, wherein the outer shape information obtained by the specifying means is such that the photosensitive substrate is at least one rotation relative to the irradiation area of the exposure light flux. A peripheral exposure apparatus, which is acquired based on a change in the relative position information detected by the detection unit during rotation. 4. The peripheral edge exposure apparatus according to claim 1 , wherein the outer shape information is detected while the photosensitive substrate is relatively rotated by at least one rotation with respect to the irradiation area of the exposure light flux. The driving unit drives the irradiation area of the exposure light beam and the photosensitive substrate relative to each other in a radial direction of the photosensitive substrate based on a change in the relative position information detected by the means. A peripheral exposure apparatus, which is second outer shape information which is information change of a relative position with respect to a substrate. 5. The peripheral exposure apparatus according to claim 4 , wherein when exposing the area of the peripheral portion of the photosensitive substrate,
A peripheral edge exposure apparatus, wherein the driving unit relatively drives the irradiation area of the exposure light beam and the photosensitive substrate based on the second outer shape information. 6. A peripheral exposure apparatus according to claim 1 , further comprising a filter for cutting light in a frequency range having a high sensitivity to said photosensitive substrate from said exposure light beam. apparatus. 7. A device manufacturing method, comprising: exposing a peripheral area of a photosensitive substrate by irradiating an exposure light beam having a predetermined irradiation area to the peripheral area of the photosensitive substrate, wherein the peripheral area of the photosensitive substrate is exposed. Relative to the exposure light flux
To detect the relative position information is information, the width of the region of the peripheral edge portion is exposed with the exposure light beam so as to maintain the edge of the photosensitive substrate in a predetermined width, the phase
Based on the position information, the irradiation region of the exposure light beam and the photosensitive substrate are relatively driven, and the exposure on the peripheral edge of the photosensitive substrate is performed based on external shape information related to the shape of the peripheral edge of the photosensitive substrate. The width maintenance unnecessary area is specified, and in the exposure width maintenance unnecessary area, the exposure is performed.
The relative position information between the light beam irradiation area and the photosensitive substrate
A method of manufacturing an element, wherein the relative driving based on the driving is interrupted to perform the exposure . 8. The device manufacturing method according to claim 7 , wherein the relative distance between the irradiation region and the photosensitive substrate during the relative rotation of the photosensitive substrate with respect to the irradiation region of the exposure light beam by at least one rotation. An element manufacturing method, wherein the outer shape information related to the shape of the peripheral portion is obtained based on a change in position information. 9. The device manufacturing method according to claim 7 , wherein the region exposed by the exposure light beam while the photosensitive substrate is relatively rotated by at least one rotation with respect to the irradiation region of the exposure light beam. The relative position of the irradiation region and the photosensitive substrate when the irradiation region and the photosensitive substrate are relatively driven in the radial direction of the photosensitive substrate so as to maintain the width at the predetermined width from the edge of the photosensitive substrate. An element manufacturing method, wherein the outer shape information relating to the shape of the peripheral portion is obtained based on change information. 10. The device manufacturing method according to claim 7 , wherein the exposure light beam is not irradiated in the exposure width maintaining unnecessary area.
Phase based on the relative position information between the irradiation region and the sensitive substrate.
A method of manufacturing an element , comprising: suspending pair driving, and relatively driving the irradiation area of the exposure light beam and the photosensitive substrate in a predetermined manner. 11. A device manufactured by the device manufacturing method according to claim 7. Description: