JP3273244B2 - High-density multi-chip module and method for manufacturing the same - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high-density multi-chip module and a method of manufacturing the same, and more particularly, to a high-density multi-chip module by directly using a semiconductor chip generally used in forming a multi-chip module. The present invention relates to a high-density multi-chip module and a method for manufacturing the same.

[0002]

2. Description of the Related Art A multi-chip module (hereinafter, MC)
M) is described with reference to FIG.
In FIG. 5, 1 and 2 both indicate semiconductor chips.
Many bumps indicated by 11 are formed on these semiconductor chips. Reference numeral 3 denotes an MCM substrate on which a large number of semiconductor chips 1 and 2 are mounted. M
Balls of a ball grid array (hereinafter abbreviated as BGA) indicated by 12 are attached and fixed to the lower surface of the CM substrate 3.

In the MCM shown in FIG. 5, each of the semiconductor chips 1 and 2 is connected to an MCM substrate 3 by flip chip bonding (hereinafter abbreviated as FC connection) or wire bonding (hereinafter abbreviated as WB connection). Has been implemented separately. In the illustrated example, the FCM is applied to the MCM substrate 3 via bumps 11 formed on a large number of semiconductor chips.
This is an example of C connection. Reference numeral 4 denotes a sealing resin, which seals a portion connected to the FC.

[0004]

In the above-described MCM, the semiconductor chips 1 and the semiconductor chips 2 are two-dimensionally arranged and mounted on the MCM substrate 3 at a certain distance from each other. Here, even if we try to further downsize the MCM,
There is naturally a limit depending on the two-dimensional arrangement of semiconductor chips. Fortunately, in the thickness direction or height direction of the MCM, the semiconductor chips 1 and 2 are three-dimensionally mounted on the MCM substrate 3 because components having relatively large heights are still used for other surface mount components. There is still room to build up.

As an example of mounting the semiconductor chips 1 and 2 on the MCM substrate 3 three-dimensionally, a method called chip-on-chip is implemented. When implementing this chip-on-chip method, FC connection and WB connection are used together for the electromechanical connection between the semiconductor chips 1 and 2 and the MCM substrate 3. However, the semiconductor chip used here is a special semiconductor chip having a dedicated shape structure configured on the assumption of a chip-on-chip from the beginning. This special semiconductor chip is used not only for realizing high-density mounting, but also for modularizing semiconductor chips of different processes, and when trying to improve the yield of MCM by reducing the size of the semiconductor chip. Is also used. As described above, this semiconductor chip is a semiconductor chip having a special shape and structure. Therefore, it cannot be used as it is and stacked in a three-dimensional direction for high-density mounting.

According to the present invention, there is no need to develop a dedicated semiconductor chip suitable for high-density mounting by stacking semiconductor chips in a three-dimensional direction. It is another object of the present invention to provide a high-density multi-chip module which solves the above-mentioned problems and a method for manufacturing the same.

[0007]

According to the present invention, there is provided an MCM in which semiconductor chips are mounted on an MCM substrate, the semiconductor chip having a non-circuit surface bonded to each other and integrated. A sub-substrate 5 is connected to the substrate 3 by electromechanical control. One of the integrated semiconductor chips 1 and 2 is flip-chip connected to the MCM substrate 3 and the other semiconductor chip 2 is A high-density multichip module connected to the substrate 5 by wire bonding was constructed.

Claim 2: In the high-density multi-chip module according to claim 1, bumps 11 are formed on one semiconductor chip 1, and sub-substrate pads 52 are formed on the upper and lower surfaces of the sub-substrate 5. Sub-substrate soldering pads 9 and flip chip connection pads 10 are formed on the upper surface of the MCM substrate 3, and the sub-substrate pads 5 on the lower surface of the sub-substrate 5 are formed.
2 is connected to the sub-board soldering pad 9, the bump 11 is connected to the flip-chip connection pad 10, and the other semiconductor chip 2 is connected to the sub-board pad 5 on the upper surface of the sub-board 5.
2 was connected via a wire 14 to form a high-density multi-chip module.

In a third aspect of the present invention, the high-density multi-chip module has a flip-chip connection portion sealed with a sealing resin made of a thermosetting synthetic resin. . Here, claim 4: a bump 11 for FC connection is formed on one of the semiconductor chips 1, and the one semiconductor chip 1 and the other semiconductor chip 2 are integrated by mutually joining them,
A sealing resin 4 is applied in advance to a region of the CM substrate 3 where the integrated semiconductor chip is to be FC-connected, and a flux is applied to a sub-substrate soldering pad 9 to which the sub-substrate 5 is soldered. , The integrated semiconductor chip is M
An FC connection is made to the CM substrate 3 and the MCM substrate 3 is placed on the stage 7 of the wire bonder. Here, the temperature of the stage 7 is set to a temperature at which the BGA balls 12 formed on the sub-substrate 5 are melted at 180 ° C. to 250 ° C. C., the BGA ball 12 is melted, and the sub-substrate pad 52 of the sub-substrate 5 is soldered to the sub-substrate soldering pad 9 of the MCM substrate 3.
Is the temperature at which the WB connection is performed and the WB connection is performed.
A method for manufacturing a high-density multi-chip module in which the semiconductor chip 2 is dropped and held between 150 ° C. and 150 ° C. and WB-connected to the sub-substrate pad 52 of the sub-substrate 5 was constructed.

According to a fifth aspect of the present invention, in the method of manufacturing a high-density multi-chip module according to the fourth aspect, when the integrated semiconductor chip is FC-connected to the MCM substrate 3, the integrated semiconductor chip is applied to a region to be FC-connected. A method for manufacturing a high-density multi-chip module in which the sealing resin 4 is left uncured is configured.

[0011]

DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described with reference to FIGS. FIG. 1 shows an MC according to the present invention.
M is shown, FIG. 1 (a) is a view from above, and FIG. 1 (b) is a view showing a vertical cross section in FIG. 1 (a). In FIG. 1, 1 and 2 both indicate semiconductor chips. Many bumps indicated by 11 are formed on these semiconductor chips. Reference numeral 3 denotes an MCM substrate on which a large number of semiconductor chips 1 and semiconductor chips 2 are mounted. BGA balls indicated by 12 are attached and fixed to the lower surface of the MCM substrate 3. This MCM
In, each semiconductor chip 1 and semiconductor chip 2 are mounted on the MCM board 3 by FC connection or WB connection.

Here, the semiconductor chip 1 and the semiconductor chip 2 are integrally joined to each other by a die bonding resin 8 between non-circuit surfaces on which the bumps 11 and other circuit components are not formed. Reference numeral 5 denotes a sub-substrate, and a chip insertion opening indicated by 51 is formed in the center thereof. Reference numeral 52 denotes a sub-substrate pad formed on the upper and lower surfaces of the sub-substrate 5. The sub-board 5 is electromechanically coupled by soldering a sub-board pad 52 formed on the lower surface to a sub-board soldering pad 9 formed on the upper surface of the MCM substrate 3. Reference numeral 13 denotes a sub-board soldering portion.

In FIG. 1, the semiconductor chip 1 is FC-connected to the MCM substrate 3 by soldering a large number of its own bumps 11 to flip chip connection pads 10 formed on the upper surface of the MCM substrate 3. This FC connection portion is sealed with a sealing resin 4 made of a thermosetting synthetic resin. The semiconductor chip 2 is connected to the sub-substrate pad 52 formed on the upper surface of the sub-substrate 5 via the wire 14 by WB.
It is connected. Reference numeral 6 denotes a sealing resin made of a thermosetting synthetic resin for sealing the WB connection portion. Semiconductor chip 2
Is electrically connected to the MCM board 3 via the wire 14, the sub-board 5, and the sub-board soldering section 13 as described above.

Next, a manufacturing process of the MCM shown in FIG. 1 will be described with reference to FIGS. Referring to FIG. 2A,
First, the bumps 11 for FC connection are formed on the semiconductor chip 1. Next, the semiconductor chip 1 and the semiconductor chip 2 are integrated by applying a die bonding resin 8 to the non-circuit surface thereof and joining them together. Referring to FIG. 2B,
The sealing resin 4 is applied in advance to a region of the MCM substrate 3 where a flip chip connection pad 10 to which the integrated semiconductor chip 1 and semiconductor chip 2 are connected by FC is formed, and the sub-substrate 5 is soldered. The sub-substrate soldering pad 9 is coated with a flux.

Referring to FIG. 3A and FIG. 3B, the semiconductor chip 1 and the semiconductor chip 2 which are joined and integrated are formed, and bumps 11 of the semiconductor chip 1 are formed on the MCM substrate 3. FC connection with the side facing down. In this case, the pressurization of the integrated semiconductor chip on the MCM substrate 3 and the heating of the soldered portion are completed before the curing of the sealing resin 4 previously applied to the FC connection portion is not completed. FIG. 3B shows a state where the FC connection portion is properly sealed with the sealing resin 4.

Referring to FIG. 3C, a BGA ball 1 is provided on a sub-substrate pad 52 formed on the lower surface of the sub-substrate 5.
2 is given. The sub-board 5 is mounted on the MCM board 3 with the BGA balls 12 of the sub-board 5 positioned so as to correspond to the sub-board soldering pads 9 of the MCM board 3. This temporary mounting state is determined by the BGA balls 12 on the sub-board 5.
Is held by the sub-substrate soldering pad 9 due to the adhesiveness of the flux.

Referring to FIG. 4, the MCM substrate 3 on which the integrated semiconductor chip 1 and semiconductor chip 2 are fixed and the sub-substrate 5 is temporarily mounted is placed on the stage 7 of the wire bonder. Here, the temperature of the stage 7 is raised to 180 ° C. to 250 ° C., which is the temperature at which the BGA balls 12 of the sub-substrate 5 are melted and BGA soldering is performed.
The GA ball 12 is melted, and the sub-substrate pad 52 of the sub-substrate 5 is soldered to the sub-substrate soldering pad 9 of the MCM substrate 3. Thereafter, the temperature of the stage 7 is lowered to a temperature at which the molten BGA ball 12 is hardened and the WB connection can be performed at 120 ° C. to 150 ° C., and the surface of the sub-substrate pad 52 formed on the sub-substrate 5 The temperature is maintained between 120C and 150C. In this temperature range, the semiconductor chip 2 is WB-connected to the sub-substrate pad 52 of the sub-substrate 5 via the wire 14. Subsequently, the MCM substrate 3 is heated on the stage 7 to complete the curing of the sealing resin 4 at the FC connection portion where the curing is not completed.

Finally, the sealing resin 6 is applied to the WB connection portion and cured, and the BGA balls 12 are formed on the lower surface of the MCM substrate 3 to complete the entire manufacturing process. In addition,
Flip of bump 11 of semiconductor chip 1 and MCM substrate 3
The chip connection pads 10 are attracted to each other by a contraction force generated when the sealing resin 4 is hardened, and are reliably connected electrically.

As described above, the semiconductor chips integrated by joining the non-circuit surfaces are connected to each other by FC connection and W connection.
By using the B connection together, it can be mounted three-dimensionally on the MCM substrate. Then, the hardening of the sealing resin 4 for FC connection is completed on the stage 7 of the wire bonder, and BGA soldering of the sub-board 5 is performed.
By performing the connection, the following effects can be obtained. That is, in the conventional MCM manufacturing process, the semiconductor chip is temporarily mounted on the MCM substrate and then kept under pressure and heat until the curing of the sealing resin is completed. However, according to the present invention, while the BGA ball soldering of the sub-board and the WB connection are performed on the stage of the wire bonder, the curing of the sealing resin 4 at the FC connection portion is performed in parallel. Further, by lowering the temperature of the stage 7 of the wire bonder, the W of the wire 14 with respect to the upper surface of the MCM substrate 3 immediately after the soldering of the BGA ball 12 of the sub-substrate 5 is performed.
A B connection can be implemented.

[0020]

As described above, according to the present invention, the semiconductor chip integrated by joining non-circuit surfaces to the MCM substrate by using both FC connection and WB connection. In this way, two chips can be mounted in one chip area of the semiconductor chip.

Then, while the BGA ball soldering of the sub-board and the WB connection are being performed on the stage of the wire bonder, the uncured sealing resin of the FC connection portion is cured in parallel. , MCM using integrated WB connection and FC connection
The number of steps for mounting on the substrate 3 or the time required for mounting can be greatly reduced.

[Brief description of the drawings]

FIG. 1 illustrates an embodiment.

FIG. 2 illustrates a manufacturing process.

FIG. 3 is a continuation of FIG. 2;

FIG. 4 is a continuation of FIG. 3;

FIG. 5 is a diagram illustrating a conventional example.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Semiconductor chip 2 Semiconductor chip 3 MCM board 4 Sealing resin 5 Sub board 6 Sealing resin 7 Wire bonder stage 8 Die bonding resin 9 Sub board soldering pad 10 Flip chip connection pad 11 Bump 12 BGA ball 13 Sub board soldering part 14 Wire 51 Chip insertion opening 52 Sub board pad

Claims (5)

(57) [Claims] 1. A multi-chip module for mounting a semiconductor chip on a multi-chip module <br/> substrate, comprising a semiconductor chip that is integrated by bonding between non-circuit face each other, a multi-chip module substrate electromechanical comprising a sub-substrate connected to, Ma one semiconductor chip of the integrated semiconductor chip
Ruchi chip density multi-chip module, characterized in that the other semiconductor chip wire bonded connection to the sub-substrate together with the module substrate is flip-chip connected. 2. The high-density multi-chip module according to claim 1, wherein a bump is formed on one of the semiconductor chips, a sub-substrate pad is formed on upper and lower surfaces of the sub-substrate, and a sub-substrate is formed on the upper surface of the multi-chip module substrate. Form the board soldering pad and flip chip connection pad, connect the sub board pad on the bottom of the sub board to the sub board soldering pad, connect the bump to the flip chip connection pad, and connect the other semiconductor chip to the top of the sub board A high-density multi-chip module connected to the sub-substrate pad via a wire. 3. The high-density multi-chip module according to claim 1, wherein the flip-chip connection portion and the wire bonding connection portion are sealed with a sealing resin made of a thermosetting synthetic resin. Multi-chip module. 4. A flip chip connecting bump is formed on one of the semiconductor chips, and the one semiconductor chip and the other semiconductor chip are interconnected to be integrated to form a single chip . A sealing resin is applied in advance to a region where the integrated semiconductor chip is to be flip-chip connected, and a flux is applied to a sub-board soldering pad to which the sub-substrate is to be soldered. the flip-chip connected to the multi-chip module group <br/> plate, placing the multi-chip module substrate on the stage of the wire bonder, where the ball is formed the temperature of the stage to the sub-substrate
180 ° C, the temperature at which the grid array balls are melted
To 250 ° C, melt the ball of the ball grid array and multi-chip
Soldering to the sub-board soldering pads of the module substrate, and then setting the stage temperature to between 120 ° C. and 150 ° C., which is the temperature at which the balls of the molten ball grid array are hardened and the wire bonding connection is performed. Waiyabo descent, holding the semiconductor chip on the sub-board sub-board pad
A method for manufacturing a high-density multi-chip module, comprising: 5. A high-density multi-chip module manufacturing method described in claim 4, Furippuchi upon flip-chip connecting the integrated semiconductor chip for multi-chip module group <br/> plate
A method for manufacturing a high-density multi-chip module, wherein an encapsulating resin applied to a region to be connected to a chip is left uncured.