JP3266817B2 - Coating device and coating method - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a coating apparatus and a coating method for applying a processing liquid such as a resist liquid to a substrate to be processed such as a semiconductor wafer.

[0002]

2. Description of the Related Art For example, in a photolithography process in a semiconductor device manufacturing process, a resist coating process for forming a resist film on the surface of a semiconductor wafer (hereinafter, referred to as a "wafer") and an exposure of the wafer after the resist coating are performed. After the processing, a development processing of performing a development processing on the wafer is performed.

Focusing on the resist coating process, a spin coating method and the like are often used as a method for uniformly applying a resist liquid on a wafer surface. In the resist coating by the spin coating method, the wafer is rotated while being vacuum-sucked by a spin chuck, a resist solution is dropped and supplied to the wafer surface from directly above the center of rotation, and the whole area from the center of the wafer to the periphery thereof is centrifugally applied. By spreading the resist solution.

[0004] Incidentally, in such a resist coating by the spin coating method, as shown in FIG. 21, as shown in FIG.
51 is known to be possible. As shown in FIG. 22, in order to remove such a resist liquid scale 151, as shown in FIG.
For example, a rinsing liquid 152 such as a thinner used as a solvent for the resist liquid is discharged from a fixed position toward the outer edge of the wafer W to remove the resist liquid scale 151 from the wafer surface.

[0005] However, there are many cases where sufficient removal cannot be achieved by such conventional resist liquid removing means. For example, when the amount of resist liquid on the wafer surface is large, the excess resist liquid may not be able to be completely carried out of the wafer by the rinsing liquid. Even if the excess resist solution can be removed from the wafer surface, there is a very high probability that the resist solution 153 attached to the vertical end face of the wafer, which is difficult to directly contact with the rinse solution 152, as shown in FIG. high.

[0006]

As described above, in the conventional coating apparatus, although the function for removing the resist liquid formed on the outer edge portion of the wafer surface after the resist is applied is provided, the resist liquid is not removed. There remains a problem with respect to the removal ability, and improvement thereof is strongly demanded.

An object of the present invention is to solve such a problem, and a coating apparatus and a coating apparatus capable of uniformly applying a processing liquid such as a resist liquid to a surface of a substrate to be processed such as a semiconductor wafer with a uniform thickness. The purpose is to provide a coating method .

The present invention also relates to a coating apparatus and a coating method capable of efficiently and reliably removing an excess pool of a processing liquid such as a resist liquid formed on an outer edge of a substrate to be processed such as a semiconductor wafer. It is intended to be provided.

[0009]

To achieve the above object, according to the Invention The coating apparatus of the present invention, as described in claim 1, and the substrate holding member you want to rotate. While holding the substrate to be processed, wherein Table of the substrate to be processed held by the substrate holding member
A treatment liquid supply means for supplying a processing liquid to a surface, the processing solution
The supplied processing liquid is applied to the surface of the substrate to be supplied.
After that, the processing liquid at the outer edge of the substrate to be processed is removed.
To remove the rinse liquid from above the substrate to be processed.
Rinsing liquid discharging means for discharging the rinsing liquid,
The processing is performed in a direction following the rotation of the processing substrate.
Rinse liquid discharging means for discharging obliquely to the surface of the substrate
If, while discharging the rinsing liquid, the rinsing liquid discharge
Moving the means from a first position on the outer edge of the substrate to be processed;
The rinse liquid does not contact the surface of the substrate to be processed.
Move to a second position off the processing substrate, and then
From the second position, at least the rinsing liquid is
Folded back to a third position on the edge of the substrate
And moving means .

In the present invention, the rinsing liquid discharging means moves from the inside of the substrate to be processed to the outside of the substrate with the end of the substrate being interposed therebetween, thereby removing the object to be removed accumulated at the outer edge of the surface of the substrate. It can be efficiently carried out of the substrate and removed, and the rinsing liquid discharging means moves from the outside of the processing substrate to the inside across the end of the processing substrate, so that the rinsing liquid discharge means moves to the vertical end surface of the processing substrate. Rinsing liquid can be applied directly to the adhered object to be removed for removal.

According to a second aspect of the present invention, there is provided a coating apparatus according to the first aspect.
The rinsing liquid discharging means is moved to the first position by the moving means.
The rinsing liquid when moving from the
The moving speed of the discharging means is changed from the first position to the second speed.
It is characterized by further comprising means for gradually lowering the position .

According to the second aspect , the rinsing liquid is discharged by the moving means.
The ejecting means from the first position on the substrate to be processed
When moving to the second position deviated from
A means to vary the moving speed of the rinsing liquid discharge means
Resist liquid accumulated on the outer edge of the substrate to be processed
The transfer force of the processing liquid depends on the movement position of the rinsing liquid discharging means.
Can be varied. That is, the rinsing liquid discharging means
From the first position on the substrate to be processed
When moving the rinsing liquid discharging means to the
The unit speed to the substrate surface to be processed by gradually lowering the moving speed
Increases the rinsing liquid discharge amount per product and increases the processing liquid transfer
To increase the processing liquid level from the substrate to be processed.
Can be removed.

[0013] Further, the coating apparatus of the present invention is, as described in claim 3, in the coating apparatus of claim 2,
The rinsing liquid discharging means is moved to the first position by the moving means.
Moving from the position to the second position,
After the liquid no longer reaches the surface of the substrate to be processed,
Keep the moving speed of the rinsing liquid discharge means constant or decrease
Characterized by further comprising means for
is there.

Further, the coating apparatus of the present invention is, as described in claim 4, in the coating apparatus of claim 1,
The rinsing liquid discharging means is moved to the first position by the moving means.
When moving from the position to the second position,
The discharge amount of the liquid from the first position to the second position.
Characterized in that it further comprises means for increasing
Is what you do. In the coating apparatus according to the fourth aspect, the rinse liquid is discharged.
When moving the delivery means from the first position to the second position,
The discharge amount of the rinsing liquid is increased from the first position to the second position.
Further, by means of the means for increasing, the conveying force of the processing liquid such as the resist liquid accumulated on the outer edge of the substrate to be processed can be varied by the moving position of the rinsing liquid discharging means. Since the processing liquid displaced by the liquid agent from the rinsing liquid discharging means gradually gathers to the outside of the substrate to be processed, an extra force for transporting the processing liquid is required. Therefore, when the rinsing liquid discharging unit is moved from the first position on the substrate to be processed to the second position off the substrate to be processed, the amount of the liquid agent discharged from the rinsing liquid discharging unit is gradually increased to transport the processing liquid. By increasing the force, it is possible to satisfactorily remove the processing liquid from the substrate to be processed.

Further, the coating apparatus of the present invention, as described in claim 5, is the coating apparatus of claim 4,
The rinsing liquid discharging means is moved to the first position by the moving means.
Moving from the position to the second position,
After the liquid no longer reaches the surface of the substrate to be processed,
Hand to keep or reduce the amount of rinsing liquid discharged
A step is further provided.

Further, the coating apparatus of the present invention is, as described in claim 6, in the coating apparatus of claim 1,
The rinsing liquid discharging means is moved to the first position by the moving means.
When moving from the position to the second position,
The discharge direction of the rinse liquid from the liquid discharge means
Gradually toward the outer edge of the substrate
It is characterized by further comprising means for changing to. Contract
In Motomeko 6, phosphorus of the rinse liquid discharging means in accordance with the movement position
By adding a means for changing the liquid discharge direction, the transfer force of the processing liquid such as the resist liquid collected at the outer edge of the substrate to be processed can be reduced.
It can be changed by the movement position of the rinsing liquid discharging means. That is, when moving the rinse liquid discharge means to the second position out of該被processed substrate from a first location on the substrate to be processed, the rinsing liquid discharge direction of the rinsing liquid discharging means from the center of the substrate By gradually inclining outwardly to increase the processing liquid transport force, it is possible to satisfactorily remove the processing liquid from the substrate to be processed. Further, according to the coating method of the present invention, when the processing liquid is supplied from the processing liquid supply unit to the surface of the substrate to be processed ,
In both cases, the substrate to be processed is held by a substrate holding member.
A coating step of performing coating of the treatment liquid is rotated while, before
After the coating step, the substrate is rotated while rotating the substrate.
Rinsing liquid discharging means from above the processing substrate
A rinsing liquid is discharged to an outer edge of the processing substrate, and the substrate to be processed is discharged.
Removing the processing solution from the outer edge of the substrate,
Solution in a direction that follows the rotation of the substrate to be processed.
And discharges obliquely to the surface of the substrate to be processed.
Then, while discharging the rinsing liquid,
The rinsing liquid discharging means may be a first liquid on the outer edge of the substrate to be processed.
From above, the rinsing liquid contacts the surface of the substrate to be processed.
Move to the second position off the substrate to be processed
And then from the second position, at least the phosphorus
The solution is folded to a third position on the edge of the substrate.
And a step of repeatedly moving . Further, as described in claim 8, the coating method according to the present invention is the coating method according to claim 7,
Moving the rinsing liquid discharging means from the first position to the second position;
Moving speed of the rinsing liquid discharging means
And toward the second position before SL from the first position gradually
It is characterized in that it is lowered . further,
The method of applying the present invention, as described in claim 9, 請
9. The coating method according to claim 8, wherein the rinsing liquid discharging unit is used.
Move from the first position to the second position
And the rinsing liquid does not touch the surface of the substrate to be processed.
After that, the moving speed of the rinsing liquid discharging means is kept constant.
It is characterized by keeping or lowering .
Further, according to the coating method of the present invention, as in claim 10, the rinsing is performed in the coating method of claim 7.
Moving the liquid discharging means from the first position to the second position
The discharge amount of the rinsing liquid is adjusted to the first position.
From the second position to the second position . Furthermore, the coating method of the present invention is, as described in claim 11, the coating method of claim 10.
In the above, the rinsing liquid discharging means is moved from the first position.
Moving toward the second position, wherein the rinsing liquid is
After rinsing on the surface of the substrate to be processed,
The present invention is characterized in that the discharge amount of the liquid is kept constant or reduced . Furthermore, the coating method of the present invention
As described in claim 12, the coating method according to claim 7
And moving the rinsing liquid discharging means forward from the first position.
The rinsing liquid discharging means when moving to the second position;
The discharge direction of the rinse liquid from the outside of the substrate to be processed.
Change gradually so that it becomes gradually diagonal toward the edge
It is characterized by the following.

[0017]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. FIGS. 1 to 3 show a semiconductor wafer (hereinafter, referred to as a "wafer") to which an embodiment of the present invention is applied. 1 is a plan view, FIG. 2 is a front view, and FIG. 3 is a back view.

In the coating and developing system 1, a plurality of wafers W as substrates to be processed are loaded into the system from the outside in a wafer cassette CR, for example, in units of 25 wafers, or unloaded from the system. A cassette station 10 for loading and unloading wafers W, and a wafer W one by one in a coating and developing process.
Between a processing station 11 in which various single-wafer processing units for performing predetermined processing are arranged at predetermined positions in a multistage manner, and an exposure apparatus (not shown) provided adjacent to the processing station 11. It has a configuration in which an interface unit 12 for delivering the data is integrally connected.

In the cassette station 10, FIG.
As shown in FIG.
At a position 0a, a plurality of wafer cassettes CR, for example, up to four wafer cassettes CR are placed in a line in the X direction (vertical direction in FIG. 1) with their respective wafer entrances facing the processing station 11 side.
The cassette arrangement direction (X direction) and the wafer arrangement direction of the wafers stored in the wafer cassette CR (Z direction;
The wafer carrier 21 (movable in the vertical direction) selectively accesses each wafer cassette CR.

Further, the wafer transfer body 21 is configured to be rotatable in the θ direction, and as will be described later, an alignment unit (ALIM) belonging to the multi-stage unit section of the third processing unit group G ₃ on the processing station 11 side. And an extension unit (EXT).

As shown in FIG. 1, the processing station 11 is provided with a vertical transfer type main wafer transfer mechanism 22 equipped with a wafer transfer device, and all processing units are surrounded by one or more sets. Are arranged in multiple stages.

As shown in FIG. 3, the main wafer transfer mechanism 22 is provided with a wafer transfer device 46 inside a cylindrical support 49 so as to be able to move up and down in the vertical direction (Z direction). The cylindrical support 49 is connected to a rotation shaft of a motor (not shown), and is rotated integrally with the wafer transfer device 46 about the rotation shaft by the rotation driving force of the motor, whereby the wafer transfer is performed. The device 46 is rotatable in the θ direction. Note that the cylindrical support 49 may be configured to be connected to another rotating shaft (not shown) rotated by the motor.

The wafer transfer device 46 includes a plurality of holding members 48 movable in the front-rear direction of the transfer base 47, and the transfer of the wafer W between the processing units is realized by these holding members 48. .

In this example, five processing unit groups G ₁ , G ₂ , G ₃ , G ₄ , G ₅ can be arranged, and the first and second processing unit groups G ₁ , G ₂ the multi-stage unit, disposed on the side (front in FIG. 1) the front of the system, the third multi-stage units of the processing unit group G ₃ is disposed adjacent to the cassette station 10, fourth processing multi-stage unit group G ₄ The units are arranged adjacent to the interface unit 12, and the multi-stage units of the _fifth processing unit group G5 can be arranged on the back side.

As shown in FIG. 2, in the first processing unit group G ₁ , two spinner type processing units, for example, a resist coating unit (FIG. 2) for performing a predetermined processing by placing the wafer W on a spin chuck in the cup CP. COT) and the developing unit (DEV) are stacked in two stages from the bottom. Second processing even unit group G _2, two spinner-type processing units, for example of the resist coating unit (COT)
The developing unit (DEV) is stacked in two stages from the bottom. These resist coating units (COT)
Since the drainage of the resist solution is troublesome both mechanically and in terms of maintenance, it is preferable to dispose the resist solution in the lower stage. However, it is of course possible to appropriately arrange the upper stage as needed.

As shown in FIG. 3, in the third processing unit group G ₃ , an oven-type processing unit for performing a predetermined process by mounting the wafer W on the mounting table SP, for example, a cooling unit (COL) for performing a cooling process An adhesion unit (AD) for performing a so-called hydrophobic treatment for improving the fixability of a resist, an alignment unit (ALIM) for positioning, and an extension unit (EX)
T), a pre-baking unit (PREBAKE) for performing a heating process before the exposure process and a post-baking unit (POBAKE) for performing a heating process after the exposure process are stacked in, for example, eight stages from the bottom. Even the fourth processing unit group G _4, oven-type processing units, for example, a cooling unit (COL), an extension and cooling unit (EXTCOL), extension unit (EXT), a cooling unit Bok (COL), pre-baking unit ( PREBAKE) and a post-baking unit (POBAKE) are stacked in order from the bottom, for example, in eight stages.

As described above, the cooling unit (COL) and the extension cooling unit (EXTCOL) having a low processing temperature are arranged in the lower stage, and the baking unit (PREBAKE), the post-baking unit (POBAKE) and the adhesion having a high processing temperature are arranged. By arranging the units (AD) in the upper stage, thermal mutual interference between the units can be reduced. Of course, a random multi-stage arrangement may be used.

The interface section 12 has the same dimensions as the processing station 11 in the depth direction (X direction), but is set smaller in the width direction. And this interface unit 12
A portable pickup cassette CR,
Stationary buffer cassettes BR are arranged in two stages, a peripheral exposure device 23 is arranged on the other side, and a wafer carrier 24 is arranged in the center. The wafer carrier 24 moves in the X and Z directions to access the cassettes CR and BR and the peripheral exposure device 23. The wafer transfer body 24 is configured so as also to be rotatable in the θ direction, wherein the processing station 11 side of the fourth processing unit extension units belonging to the multi-stage units of group G ₄ (EXT) and, further Denotes a wafer transfer table (not shown) on the adjacent exposure apparatus side
Is also accessible.

Further, in the coating and developing system 1, the multi-stage unit of the _fifth processing unit group G5 indicated by a broken line can be arranged on the back side of the main wafer transfer mechanism 22 as described above. , The fifth processing unit group G ₅
The multi-stage unit is configured to be able to shift sideways as viewed from the main wafer transfer mechanism 22 along the guide rail 25. Therefore, even when provided as a multi-stage unit of the fifth processing unit group G ₅ shown, by sliding along the guide rail 25, the space portion can be secured, to the main wafer transfer mechanism 22 The maintenance work can be easily performed from behind. Note fifth processing unit group G ₅ of the multi-stage units Bok is not limited to the linear slide shift along such guided rails 25, as indicated by reciprocating rotation dashed-line arrow in FIG. 1, Even if it is configured to be shifted to the outside of the system, it is easy to secure a space for maintenance work on the main wafer transfer mechanism 22.

Next, the resist coating unit (COT) according to the present embodiment will be described with reference to FIGS. FIGS. 4, 5, and 6 are a schematic plan view and a schematic cross-sectional view showing the entire configuration of the resist coating unit (COT).

An annular cup C # is provided at the center of the resist coating unit (COT), and a spin chuck 52 is provided inside the cup C #. The spin chuck 52 is rotationally driven by a drive motor 54 in a state where the semiconductor wafer W is fixedly held by vacuum suction.
The drive motor 54 is disposed in an opening 50a provided in the unit bottom plate 50 so as to be able to move up and down, and via a cap-shaped flange member 58 made of, for example, aluminum, an elevating drive means 60 and an elevating guide means 62 made of, for example, an air cylinder. Are combined. A cylindrical cooling jacket 6 made of, for example, SUS is provided on a side surface of the drive motor 54.
The flange member 58 is attached so as to cover the upper half of the cooling jacket 64.

At the time of resist application, the lower end 58a of the flange member 58 is in close contact with the unit bottom plate 50 near the outer periphery of the opening 50a, thereby sealing the inside of the unit. When the transfer of the semiconductor wafer W is performed between the spin chuck 52 and the holding member 48 of the main wafer transfer mechanism 22, the lifting / lowering drive unit 60 is driven by the drive motor 54 or the spin chuck 5.
The lower end of the flange member 58 is lifted from the unit bottom plate 50 by lifting the upper part 2 upward.

A resist nozzle 86 for supplying a resist solution to the surface of the semiconductor wafer W has a resist supply pipe 88.
To a resist supply unit (not shown). The resist nozzle 86 is detachably attached to the tip of a resist nozzle scan arm 92 via a nozzle holder 100. The resist nozzle scan arm 92 is attached to the upper end of a vertical support member 96 that can move horizontally on a guide rail 94 laid in one direction (Y direction) on the unit bottom plate 50, and is not shown in the Y direction. The drive mechanism moves in the Y direction integrally with the vertical support member 96.

The resist nozzle scan arm 92
Can also be moved in the Χ direction perpendicular to the Y direction in order to selectively attach the resist nozzle 86 in the resist nozzle standby section 90, and is also moved in the Χ direction by a Χ direction driving mechanism (not shown). .

Further, in the resist nozzle standby section 90, the discharge port of the resist nozzle 86 is inserted into the port 90a of the solvent atmosphere chamber and is exposed to the solvent atmosphere so that the resist liquid at the nozzle tip does not solidify or deteriorate. It has become. Also, a plurality of resist nozzles 86, 86,... Are provided, and these nozzles can be selectively used according to the type of the resist liquid.

Further, on the guide rail 94, a vertical support member 9 for supporting the resist nozzle scan arm 92 is provided.
6, a vertical support member 122 that supports the rinse nozzle scan arm 120 and is movable in the Y direction is also provided. A rinsing nozzle 124 for side rinsing is attached to the tip of the rinsing nozzle scan arm 120. A rinsing nozzle scan arm 120 and a rinsing nozzle 12 are driven by a Y-direction driving mechanism (not shown).
Reference numeral 4 denotes a rinse nozzle standby position (solid line position) set on the side of the cup CP and a rinse liquid discharge position (dotted line position) set just above the outer edge of the semiconductor wafer W installed on the spin chuck 52. ) And move linearly.

As shown in FIGS. 4 and 6, the rinsing nozzle 124 aims at a certain position on a straight line passing through the center point of the spin chuck 52 along the Y axis and holds the wafer held by the spin chuck 52. The rinsing liquid is provided obliquely to the surface of the W and in a direction following the rotation of the spin chuck 52 and the wafer W.

Next, the operation of the resist coating unit (COT) will be described with reference to FIGS.

As shown in FIG. 7, the main wafer transfer mechanism 22
Resist coating unit (CO)
When the semiconductor wafer W is transported to just above the cup C # in T), as shown in FIG. 8, the semiconductor wafer W is lifted by the lifting drive means 60 and the lift guide means 62, for example, composed of an air cylinder. Vacuum suction is performed by the spin chuck 52. The main wafer transfer mechanism 22 vacuum-adsorbs the semiconductor wafer W to the spin chuck 52 and then moves the holding member 48 to a resist coating unit (COT).
The semiconductor wafer W is returned from the inside, and the delivery of the semiconductor wafer W to the resist coating unit (COT) is completed.

Next, as shown in FIG. 9, the semiconductor wafer W of the spin chuck 52 is lowered to a fixed position in the cup C #, and the drive motor 54 starts rotating the spin chuck 52. During the above period, the resist nozzle 86
Is standing by at a standby position outside the cup CP.

Thereafter, as shown in FIG. 10, the movement of the nozzle holder 100 from the standby position indicated by the dotted line is started. The movement of the nozzle holder 100 is performed along a path indicated by an arrow in the figure. That is, the nozzle holder 100
Moves from the standby position to a predetermined height in order to avoid interference with the cup CP, and then moves in the Y direction toward the center position of the spin chuck 52. And the nozzle holder 1
00 indicates that the discharge port of the resist nozzle 86 is the spin chuck 5
Y until reaching the center of 2 (the center of the semiconductor wafer W)
Then, the resist liquid is dropped from the discharge port of the resist nozzle 86 onto the surface of the rotating semiconductor wafer W, and the resist is applied to the wafer surface.

After the completion of the application of the resist liquid, as shown in FIG.
Returns to the standby indicated by the solid line along the path indicated by the arrow in the figure, and the rinse nozzle 124 which has been waiting at the position indicated by the dotted line moves straight to the rinse liquid discharge position indicated by the solid line.

The operation after the movement of the rinse nozzle 124 will be described with reference to FIGS. In addition, FIG.
14A and 14B show the rinsing nozzle 12
4A and 4B are a plan view and a cross-sectional view showing the movement position of No. 4, respectively, and FIG.

As shown in FIG. 12, first, the rinsing nozzle 124 moves from the standby position to a rinsing liquid discharge start position provided on the outer edge of the wafer W. During this movement, the rinsing liquid is not discharged. FIG. 12C shows the state of the outer edge of the wafer surface after the supply of the resist solution. It can be seen that the resist liquid scale 131 is formed at the outer edge of the wafer W.

As shown in FIG.
Moves to the rinse liquid discharge start position, and then rinse nozzle 1
At the same time as starting the discharge of the rinsing liquid 141 from the
The rinsing nozzle 124 is moved toward the standby position to move the rinsing liquid 141 from the rinsing nozzle 124 to a predetermined position indicated by a solid line in the drawing where the rinsing liquid 141 does not hit the surface of the wafer W. As a result of the rinsing liquid discharging operation involving the movement of the rinsing nozzle 124 from inside to outside, as shown in FIG. It is pushed to the edge of W and removed from the wafer surface. However, at this point, there is a concern that the excess resist liquid 132 still remains on the end surface of the wafer W.

Therefore, as shown in FIG. 14, the rinsing nozzle 124 is moved again from the position outside the wafer W shown by the dotted line to the rinse liquid discharge start position shown by the solid line while discharging the rinsing liquid 141. However, the return movement of the rinse nozzle 124 does not always have to be performed until the rinse liquid discharge start position is reached. For example, the rinse liquid 141 may be moved to a predetermined position before the discharge start position, or may be moved to at least a position where the rinse liquid 141 reaches the end of the wafer W.

The extra resist liquid 132 remaining on the end face of the wafer W due to the return movement of the rinse nozzle 124 accompanying the discharge of the rinse liquid is washed away by the rinse liquid 141 applied directly from above, and is removed from the wafer end face. .

In the removal processing of the resist liquid on the outer edge of the wafer by the rinsing liquid, the excess resist liquid pushed by the rinsing liquid gradually gathers outside the wafer. For this reason, a greater force is required to push an extra resist solution toward the outside of the wafer.

FIGS. 15 to 17 show in view of such circumstances that the transfer force of the resist solution can be varied according to the moving position of the rinsing nozzle 124 from the rinsing solution discharge start position to the turn-back position. Each of the embodiments of the present invention is shown.

FIG. 15 shows that the rinsing nozzle 124 is moved according to the moving position or time of the rinsing nozzle 124 from the rinsing liquid discharging start position to the turning-back position in order to vary the resist liquid conveying force. In this case, the moving speed is varied. That is, the discharge amount of the rinsing liquid per unit time is kept constant, and the moving speed is reduced as the moving distance (time) of the rinsing nozzle 124 is increased.

In this example, as shown in the (speed-nozzle position) graph of FIG.
Before moving from the rinse liquid discharge start position to the turnback position, the moving speed is proportionally reduced according to the moving position. However, the present invention is not limited to this. (Position) As shown by the dotted line in the graph, the moving speed of the rinsing nozzle 124 may be constant or reduced after the rinsing liquid 141 no longer reaches the surface of the wafer W.

FIG. 16 shows that the rinsing nozzle 124 is moved according to the moving position or time of the rinsing nozzle 124 from the rinsing liquid discharge start position to the turn-back position in order to change the resist liquid conveying force. The amount of rinsing liquid discharged per unit time from is varied. That is, the moving speed of the rinsing nozzle 124 is constant, and the moving distance (time) of the rinsing nozzle 124
The discharge amount of the rinsing liquid per unit time is increased as increases.

In this example, as shown in the (rinse liquid discharge amount-nozzle position) graph of FIG. 16, the rinse nozzle 124 moves from the rinse liquid discharge start position to the turnback position per unit time. Is increased proportionally in accordance with the moving position, but the present invention is not limited to this.
May be constant or reduced from the time when the surface area of the wafer W no longer reaches the surface of the wafer W.

FIG. 17 shows the orientation of the rinsing nozzle 124 while the rinsing nozzle 124 moves from the rinsing liquid discharge start position to the turn-back position, that is, the rinsing liquid 141 from the rinsing nozzle 124 in order to change the resist liquid conveying force.
Is changed in accordance with the moving position of the rinse nozzle 124 or the time. That is, the moving speed of the rinsing nozzle 124 and the amount of the rinsing liquid discharged per unit time are fixed, and the moving distance (time) of the rinsing nozzle 124 is within a range where the rinsing liquid 141 is discharged onto the surface of the wafer W.
Increases, the angles θ1 to θ3 are gradually or gradually increased.

In the range of angles θ 1 to θ 3 at which the rinsing liquid 141 is discharged onto the surface of the wafer W, the greater the angle θ, the greater the force for transporting the resist liquid in the Y-axis direction. The prime can be removed more efficiently. In the range of angles θ4 to θ6 at which the rinsing liquid 141 is not discharged onto the surface of the wafer W,
It is desirable that the direction of the discharge direction of the rinsing liquid 141 with respect to the X axis is reversed toward the center of the wafer W, and the angles θ4 to θ6 are gradually or stepwise increased as the moving distance (time) of the rinsing nozzle 124 increases. By doing so, even in the process in which the rinse nozzle 124 moves from the rinse liquid discharge start position to the turnback position, the rinse liquid 141 is directly discharged to the resist liquid up to the end surface of the wafer W, and the resist liquid buildup is formed. The removal ability can be increased.

Next, another embodiment of the present invention will be described.

FIG. 18 is a plan view of a coating and developing system according to another embodiment of the present invention, and FIG. 19 is a front view thereof.

In the coating and developing system 201 according to this embodiment, the cassette station 210 and the interface unit 212 have the same configuration as the coating and developing system 1 shown in FIGS. different.

The coating and developing system 201 includes two processing stations, that is, a first processing station 2.
11a and the second processing station 211b are arranged continuously.

The first processing station 211a includes, for example, five processing unit groups G ₁ , G ₂ , G ₃ , G ₄ , G ₅
Having. In the first processing unit group G _1, for example, developing units (DEV) are two-tiered. Second
Any processing unit group G _2, the developing unit (DE
V) are stacked in two stages. Third processing unit group G
_{In 3} , for example, a cooling unit (C
OL), adhesion unit (AD), alignment unit (ALIM), extension unit (EXT), pre-baking unit (PREBAK)
E) and post-baking unit (POBAKE)
Are, for example, stacked in eight stages from the bottom. Even the fourth processing unit group G _4, for example, a cooling unit (C
OL), a cooling unit (COL), an extension cooling unit (EXTCOL), an extension unit (EXT), a pre-baking unit (PREBAKE), and a post-baking unit (POBAKE) are stacked in order from the bottom, for example, in eight stages. ing. Any processing unit group G ₅ of the fifth, it is possible to arrange Like these.

The second processing station 211b has the first processing station 211b.
Has substantially the same configuration as the processing station 211a. That is, the second processing station 211b
It has two processing unit groups G ₁ , G ₂ , G ₃ , G ₄ , G ₅ . In the first processing unit group G _1, for example of the resist coating unit (COT) are two-tiered. Second
Any processing unit group G _2, a resist coating unit (C
OT) are stacked in two stages. In the third processing unit group G _3, for example, a cooling unit (COL), the adhesion unit (AD), an alignment unit (ALIM), extension unit (EXT), pre-baking unit (PREBAK
E) and post-baking unit (POBAKE)
Are, for example, stacked in eight stages from the bottom. Even the fourth processing unit group G _4, for example, a cooling unit (C
OL), a cooling unit (COL), an extension cooling unit (EXTCOL), an extension unit (EXT), a pre-baking unit (PREBAKE), and a post-baking unit (POBAKE) are stacked in order from the bottom, for example, in eight stages. ing. Any processing unit group G ₅ of the fifth, it is possible to arrange Like these.

The extension units (EXT) of the fourth processing unit group G ₄ in the first processing station 211 a and the extension units (EXT) of the third processing unit group G ₃ in the second processing station 211 b are as follows. The wafers W are connected to each other and can be transferred between these extension units (EXT). Thereby, the first processing station 211
a between the wafer W and the second processing station 211b.
Is to be delivered.

Here, the first processing station 211a
Is compared with the configuration of the second processing station 211b, while the first processing station 211a has four development processing units (DEV), the second processing station 211b has four resist coating units. The difference is that it has a unit (COT). That is, the first processing station 211a performs a developing process, and the second processing station 211b performs a resist coating process.

By the way, the processing system configured as described above is installed in a clean room, thereby increasing the cleanliness. However, by supplying the vertical laminar flow efficiently in the system, the cleaning of each part is also performed. The degree is even higher. FIG. 20 is a schematic diagram showing the flow of clean air in the coating and developing processing system 201.

The cassette station 210, the first processing station 211a, and the second processing station 211
Air supply chambers 220, 221a, 221b, and 212 are provided above the air supply chambers 220, 221a, 221b, and 212, respectively.
12, a filter with a dustproof function such as ULPA
A filter 255 is attached. Air is introduced into each of the air supply chambers 220 and 212 through a pipe, and clean air is supplied to the cassette station 210 and the interface unit 212 by the ULPA filter 255 in a downflow manner.

The chemical filters 231 are provided in the air supply chambers 221a and 221b of the first processing station 211a and the second processing station 211b.
a, and clean air is supplied from outside through 231b. That is, the clean air supplied from the outside is supplied to the air supply chambers 221a and 221b through the chemical filters 231a and 231b, and further, the ULP
A first processing station 21 via A filter 255
1a and the second processing station 211b.

In the processing system according to this embodiment, the first processing station 211a performs the developing process and the second processing station 211a performs the developing process.
Is configured to perform the resist coating process, the chemical filters 231a, 23
1b can be selected so as to match each process. That is, as the chemical filter 231a in the first processing station 211a, a filter that removes a substance that adversely affects the development processing can be used.
As the chemical filter 231b in the processing station 211b, a filter that removes a substance that has an adverse effect on the resist coating process can be used. As a result, the rate of occurrence of defects due to particles can be reduced.

In the processing system according to the present embodiment, the first processing station 211a performs the developing processing and the second processing station 211b performs the resist coating processing. Can be simplified, and the throughput can be improved.

In the above embodiment, the present invention is applied to an apparatus for applying a resist solution to a semiconductor wafer.
The present invention is also applicable to an apparatus for applying a resist solution to the D substrate.

[0070]

As described in detail above, according to the present invention,
From inside to outside of the substrate with the edge of the substrate
By rinsing liquid discharging unit is moved, the removal target collected in the outer edge portion of the substrate surface can be removed efficiently Hakobidashi outside of the substrate, also, an end of the substrate
Across the parts by rinsing liquid discharge means from the outside to the inside of the substrate is moving, it can be removed by applying a direct rinse liquid to remove the object attached to the vertical end face of the substrate. This makes it possible to satisfactorily remove the object to be removed from the outer edge of the substrate to be processed.

Further, according to the present invention, it is possible to satisfactorily remove the height of the processing liquid such as the resist liquid accumulated on the outer edge of the substrate to be processed.

Further, according to the present invention, the processing liquid such as excess resist liquid accumulated at the outer edge of the substrate to be processed does not flow back inside the substrate to be processed, but the processing liquid is efficiently applied. It can be removed from the processing substrate.

[0073] Further, according to the present invention, when moving the rinse liquid discharging means at a position deviated from該被processed substrate from a position on the substrate to be processed, the rinsing liquid ejection <br/> out of the rinse liquid discharging means By gradually increasing the amount and increasing the processing liquid transport force, the processing liquid can be removed from the substrate to be processed satisfactorily.

[0074] Further, according to the present invention, when moving the rinse liquid discharging means at a position deviated from該被processed substrate from a position on the substrate to be processed, gradually reducing the moving speed of the rinsing liquid discharging means to be Per unit area to the substrate surface
By increasing the rinsing liquid discharge amount and increasing the processing liquid transport force, it is possible to satisfactorily remove the processing liquid from the substrate to be processed.

[0075] Further, according to the present invention, when moving the rinse liquid discharging means at a position deviated from該被processed substrate from a position on the substrate to be processed, the rinsing liquid ejection <br/> out of the rinse liquid discharging means By gradually inclining the direction toward the outside from the center of the substrate to be processed to increase the transport force of the processing liquid, the processing liquid can be removed from the substrate to be satisfactorily removed.

[Brief description of the drawings]

FIG. 1 is a plan view showing the overall configuration of a semiconductor wafer coating and developing processing system according to an embodiment of the present invention.

FIG. 2 is a front view showing the configuration of the coating and developing system of FIG. 1;

FIG. 3 is a rear view showing the configuration of the coating and developing processing system of FIG. 1;

FIG. 4 is a plan view showing the overall configuration of a resist coating unit in the coating and developing processing system of FIG. 1;

FIG. 5 is a first sectional view showing the overall configuration of the resist coating unit in FIG. 4;

FIG. 6 is a second sectional view showing the overall configuration of the resist coating unit in FIG. 4;

FIG. 7 is a view showing a process of loading a wafer into a resist coating unit according to the embodiment;

FIG. 8 is a view showing a process of transferring a wafer carried into a resist coating unit of the present embodiment to a spin chuck.

FIG. 9 is a diagram showing a state at the time of completion of delivery of a wafer to a resist coating unit according to the embodiment;

FIG. 10 is a view showing a step of applying a resist liquid to a wafer in the resist application unit of the present embodiment.

FIG. 11 is a view showing a process of discharging a rinse liquid to a wafer in a conventional resist coating apparatus.

FIG. 12 is a diagram illustrating a process of moving a rinse nozzle from a standby position in a rinse liquid discharging process of FIG. 11;

13 is a view showing a moving step from a discharge start position of a rinse nozzle in a rinsing liquid discharging step of FIG. 11;

FIG. 14 is a diagram illustrating a process of moving the rinse nozzle from a turn-back position in the rinse liquid discharging process of FIG. 11;

FIG. 15 is a diagram for describing a control method of a rinsing liquid discharge amount in a moving process from a rinsing nozzle discharge start position in FIG. 13;

FIG. 16 is a diagram for describing a control method of a moving speed in a moving step from a discharge start position of the rinse nozzle in FIG. 13;

FIG. 17 is a diagram for describing a control method of a rinse liquid discharge direction of the rinse nozzle in a moving step from a discharge start position of the rinse nozzle in FIG. 13;

FIG. 18 is a plan view of a coating and developing system according to another embodiment of the present invention.

FIG. 19 is a front view of the coating and developing system shown in FIG. 18;

20 is a schematic diagram showing a flow of clean air in the coating and developing system shown in FIG.

FIG. 21 is a cross-sectional view showing a height of a resist solution formed on an outer edge portion of a semiconductor wafer;

FIG. 22 is a sectional view for explaining a conventional resist liquid removing mechanism;

FIG. 23 is a cross-sectional view showing a liquid resist remaining on the vertical end surface of the semiconductor wafer;

[Explanation of symbols]

 COT resist coating unit W semiconductor wafer 52 spin chuck 86 resist nozzle 94 guide rail 96 vertical support member 120 rinse nozzle scan arm 124 rinse nozzle 131 141 ... Rinse liquid

────────────────────────────────────────────────── ─── Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI H01L 21/027 H01L 21/30 564C 564D 569C 577 JP-A-142332 (JP, A) JP-A-56-78653 (JP, A) JP-A-61-15773 (JP, A) JP-A-1-218664 (JP, A) JP-A-61-121333 (JP, A) JP-A-5-335226 (JP, A) JP-A-6-349729 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) B05C 5/00-5/02 B05C 11 / 08,11 / 10 B05D 1 / 26,1 / 40 B05D 3/00 G03F 7/16 502 H01L 21/027

Claims (12)

(57) [Claims] 1. A substrate holding member you want to rotate. While holding a substrate to be processed, on the surface of the target substrate held by the substrate holding member
Processing liquid supply means for supplying a processing liquid, and the processing liquid being supplied to the surface of the substrate to be processed and
After the application of the liquid, before the outer edge of the substrate to be processed,
In order to remove the processing liquid, the rinsing liquid is applied to the substrate to be processed.
Rinsing liquid discharging means for discharging from above the
Solution in a direction that follows the rotation of the substrate to be processed.
Rinsing to discharge obliquely to the surface of the substrate to be processed
Liquid discharging means, and the rinsing liquid discharging means while discharging the rinsing liquid.
From the first position on the outer edge of the substrate to be processed.
The process liquid in which the solution does not contact the surface of the substrate to be processed.
Moving to a second position off the substrate,
From position 2, at least the rinsing liquid is
A folding back movement to a third position on the edge of the plate
A coating device, comprising: a moving unit . 2. The coating apparatus according to claim 1, wherein, when the rinsing liquid discharging means is moved from the first position to the second position by the moving means, the moving speed of the rinsing liquid discharging means is set to: From the first position to the second
A coating device further comprising means for gradually lowering the position toward the position. 3. The coating apparatus according to claim 2, wherein the rinsing liquid discharging means is moved from the first position to the second position by the moving means, and the rinsing liquid is supplied to the substrate to be processed. The coating apparatus, further comprising a unit for keeping the moving speed of the rinsing liquid discharging unit constant or decreasing the moving speed of the rinsing liquid discharging unit after the surface of the rinsing liquid discharges. 4. The coating apparatus according to claim 1, wherein when the rinsing liquid discharging unit is moved from the first position to the second position by the moving unit, the discharge amount of the rinsing liquid is set to the second position. A coating apparatus, further comprising means for increasing the position from the first position to the second position. 5. The coating apparatus according to claim 4, wherein the rinsing liquid ejecting means is moved from the first position to the second position by the moving means, and the rinsing liquid is applied to the substrate to be processed. The coating apparatus further comprising means for keeping the discharge amount of the rinsing liquid constant or decreasing the amount of the rinsing liquid after the rinsing liquid no longer reaches the surface. 6. The coating apparatus of claim 1, wherein, when moving the rinse liquid discharging means to said second position from said first position by said moving means, said rinsing liquid from the rinsing liquid discharging unit A coating device, further comprising means for gradually changing the discharge direction of the substrate so as to be gradually inclined toward the outer edge direction of the substrate to be processed. 7. A processing liquid is supplied from a processing liquid supply unit to a surface of a substrate to be processed, and the substrate to be processed is held on the substrate.
Rotate while holding by the member to apply the treatment liquid
The coating step to be performed , after the coating step, while rotating the substrate to be processed,
The substrate is processed by the rinsing liquid discharging means from above the substrate to be processed.
A rinsing liquid is discharged to the outer edge of the processing substrate, and the substrate to be processed is discharged.
Removing the processing solution at the outer edge of the plate,
The rinse liquid is directed in a direction following the rotation of the substrate to be processed.
And discharge it obliquely to the surface of the substrate to be processed.
In addition, while discharging the rinsing liquid,
The rinsing liquid discharging means is disposed on an outer edge of the substrate to be processed.
From position 1, the rinsing liquid is applied to the surface of the substrate to be processed.
Move to the second position off the substrate
And then from the second position, at least the
Up to a third position where the solution is applied to the end of the substrate to be processed.
Coating method being characterized in that; and a step of folding movement. 8. The coating method according to claim 7, wherein when the rinsing liquid discharging means is moved from the first position to the second position, the moving speed of the rinsing liquid discharging means is set to the first speed. A coating method characterized by gradually lowering from a position toward the second position. 9. The coating method according to claim 8, wherein the rinsing liquid discharging means is moved from the first position to the second position, so that the rinsing liquid does not reach the surface of the substrate to be processed. After the cleaning, the moving speed of the rinsing liquid discharging means is kept constant or reduced. 10. The coating method according to claim 7, wherein when the rinsing liquid discharging means is moved from the first position to the second position, the discharge amount of the rinsing liquid is changed from the first position. The coating method, wherein the number is increased toward the second position. 11. The coating method according to claim 10, wherein the rinsing liquid discharging means is moved from the first position to the second position, so that the rinsing liquid does not reach the surface of the substrate to be processed. After the application, the discharge amount of the rinsing liquid is kept constant or reduced. 12. The coating method according to claim 7, wherein when the rinsing liquid discharging means is moved from the first position to the second position, the rinsing liquid discharging direction from the rinsing liquid discharging means is changed. A coating method wherein the substrate is gradually changed so as to be gradually inclined toward the outer edge of the substrate to be processed.