JP3266595B2 - Manufacturing method of multipoint connection sheet for ball-shaped bump contact of semiconductor parts - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a multipoint connection sheet for contacting a ball-shaped bump formed on a semiconductor wafer or a semiconductor chip (CSP).

[0002]

2. Description of the Related Art In recent years, product development and mass production of wafer level CSPs (chip size packages) have been started.
Many of these CSPs have innumerable ball-shaped bumps arranged at very small pitches as external contacts, and conventional contacts that require punching and bending work to reduce the pitch of these CSP ball-shaped bumps. The situation cannot be handled.

[0003]

SUMMARY OF THE INVENTION The present invention provides a method of manufacturing a multipoint connection sheet for contacting a ball-shaped bump of a semiconductor component, which appropriately addresses these problems.

[0004]

A contact probe for contacting a ball-shaped bump of a semiconductor component according to the present invention is held in a hole penetrating an insulating sheet.

The above-mentioned contact probe has a ring portion formed by plating and adhering to the inner peripheral surface of the hole, and an upper annular surface of the ring portion is exposed on the upper surface of the insulating sheet.

[0006] In the inner region of the ring portion, there is provided a through hole or a recess opening in the inner region of the upper annular surface, and the lower dead center portion of the ball-shaped bump of the semiconductor component is received in the through hole or the recess. An inner peripheral edge portion of the upper annular surface forms an annular contact seat surface that annularly contacts the lower spherical surface of the ball-shaped bump.

The lower annular surface of the ring portion is exposed on the lower surface of the insulating sheet and is provided for contact with other electronic components.
Alternatively, the contact probe has an electrode pad formed by plating that closes a lower opening surface of the hole at a lower portion of the ring portion and is exposed on a lower surface of the insulating sheet, and the electrode pad is connected to another wiring board or the like. Provide for contact with electronic components. The electrode pad is integrated with the ring portion in the hole of the insulating sheet.

The multipoint connection sheet comprises a step of integrally growing the upper end ring portion from one surface of the conductive metal layer and a step of integrally forming the lower end ring portion made of conductive metal from the other surface of the conductive metal layer. A step of growing by plating, and removing the conductive metal layer between the lower ring portions by etching to integrate the lower ring portion and the upper ring portion via a conductive metal layer portion interposed therebetween. The method is provided by a manufacturing method including a step of forming a probe.

As another example, the multipoint connection sheet includes a step of integrally growing the ring portion from one surface of the conductive metal layer by plating and an electrode pad made of a conductive metal from the other surface of the conductive metal layer. A step of integrally plating and growing, and removing the conductive metal layer between the electrode pads by etching to integrate the electrode pad and the ring portion via the conductive metal layer portion interposed between the contact probe and the contact probe. The method is provided by a manufacturing method including a forming step.

[0010] In the method of manufacturing the multipoint connection sheet,
A step of applying a photosensitive resin layer which reacts to light and hardens on one surface of the insulating film to form the insulating sheet made of a composite resin sheet.

[0011]

FIG. 1 shows an embodiment of the present invention.
This will be described with reference to FIGS.

As shown in FIG. 1 to FIG.
Has many contact probes 1 formed by plating growth held in the thickness of the sheet 2. The contact probe 1 is in close contact with the inner peripheral surface of a through hole 8 penetrating the insulating sheet 2 in the thickness direction.

The contact probe 1 has a ring portion 3 formed on the upper end by plating growth and brought into close contact with the sheet 2.
Hold.

The upper annular surface 4 of the ring portion 3 is exposed on the upper surface of the insulating sheet 2 and has a through hole or a recess 5 in the inner region of the ring portion 3 to be opened in the upper annular surface 4.

The bottom hole 7 of the ball-shaped bump 6 of the semiconductor component represented by CSP is received in the through hole or the recess 5, and the inner peripheral edge of the upper annular surface 4 is formed in the through hole or the recess 5.
An annular contact seating surface 9 is formed in annular contact with the peripheral surface of the lower spherical surface of the ball-shaped bump 6 received therein.

The annular contact bearing surface 9 is formed by an inclined surface 9 'which is synchronized with the peripheral surface of the lower spherical surface of the ball-shaped bump 6.

FIG. 1 and FIG. 2 show that the contact probe 1 as a whole has a ring shape, a contact portion with the ball-shaped bump 6 is formed by an upper ring portion 3 of the contact probe 1, and a lower end ring portion 3 'is formed. The lower annular surface 10 is exposed on the lower surface of the insulating sheet 2 and is provided for contact with other electronic components.

That is, the lower end of the lower ring portion 3 'is exposed so as to slightly protrude from the lower surface of the insulating sheet 2 to form an annular bump 19, and the lower annular surface 10 of the annular bump 19 is connected to another wiring circuit board 17 A lead 28 for directly contacting the surface of the electrode pad 18 of an electronic component such as the like or connecting to the lower end of the lower end ring portion 3 ′ is provided in close contact with the lower surface of the insulating sheet 2, and another electronic component is connected to the end of the lead. Component electrode pad 18
Is provided.

As another example, FIGS. 3 and 4 have an electrode pad 11 formed by plating exposed on the lower surface of the insulating sheet 2, and the electrode pad 11 is formed between the upper end ring portion 3 and the insulating sheet 2. The contact probe 1 is integrally formed.

The electrode pad 11 is formed by plating and growing integrally with the ring 3 so as to close the lower opening of the upper ring 3 and to close the lower opening of the hole 8.
It projects slightly from the lower surface of the insulating sheet 2, and the projected circular lower surface is used for contact with the electrode pads 18 of other electronic components such as the printed circuit board 17.

Alternatively, the lead 28 connected to the electrode pad 11
Are provided in close contact with the lower surface of the insulating sheet 2 and bumps are provided at the lead ends to be in contact with the electrode pads 18 of other electronic components.

The contact probe 1 is an insulating sheet 2
The probe 1 is partially separated from the insulating sheet 2 by a slit penetrating the probe 1, and the slit extends to at least two sides of the probe 1 in front, rear, left and right.

For example, the contact probe 1 is formed in an L-shape on one of the left and right sides and in front of the contact probe 1, or is formed facing the left and right sides of the contact probe 1. Numeral 12 denotes a slit extending to the left and right sides of the contact probe 1 so as to face each other.

Accordingly, the contact probe 1 is arranged on the sheet piece 15 in the inner region of the left and right slits 12, and the contact probe 1 bends the sheet piece 15 about a connection portion with the insulating sheet 2 to support the insulation. The seat 2 can be elastically displaced toward the upper and lower surfaces.

As another example, as shown in FIGS. 1 and 3, the slits are formed continuously so as to surround three sides of the contact probe 1. That is, the left and right slits 12
A front slit 13 continuous with the end of the contact probe 1 is formed to surround the contact probe 1. That is, it surrounds the upper ring portion 3 and the lower ring portion 3 ′ or the electrode pad 11.

Therefore, the left and right slits 12 and the front slit 1
The contact probe 1 is arranged on the inner sheet portion 15 surrounded by 3. The contact probe 1 bends the sheet piece 15 with the connecting portion of the insulating sheet 2 as a fulcrum, and is elastically displaceable toward the upper and lower surfaces of the insulating sheet 2. Thereby, pressure contact with the ball-shaped bump 6 is obtained.

As still another example, as shown in FIGS.
The contact probe 1 is plated and grown in a form cut off on the generatrix, that is, a C-shape in plan view, and a central slit 14 is provided extending from the outside to the inside through the C-shaped opening 29.

The right and left semicircular contact pieces of the ring portion 3 separated by the central slit 14, ie, the right and left semicircular surface portions of the upper annular surface 4, are free to be displaced up and down without being restricted by each other. And the degree of freedom to be displaced in the thickness direction of the insulating sheet 2 without being restricted by each other is provided. This provides a self-adjustment operation for the ball-shaped bump 6, and the contact probe 1
Is properly adjusted.

The slits 12, 13, and 14 may be cut linearly without removing the base material of the insulating sheet 2, or may be formed to have the same width by removing the base material. For example, these slits 12, 13, and 14 are formed by using a cutting tool or by burning out to a certain width using a laser beam.

Preferably, the insulating sheet 2 is burned off using a laser beam to form a slit 1 having a fixed width.
2, 13, 14 are formed over a certain length. The slits 12, 13, 14 formed by this are slits 12, 1,
A molten layer is formed at the peripheral edge of each of the laser beams 3 and 14 by a laser so that the layers are strengthened. This is effective in preventing tearing, and the width of the slits 12, 13 and 14 can be easily set. Can be easily performed.

Next, a method of manufacturing the through contact probe 1 shown in FIGS. 1 and 2 will be described with reference to FIGS. 5A to 5J, and the structure will be further clarified by the description of the manufacturing method.

As shown in FIG. 1A, an insulating film 20 having a conductive metal layer 21 formed on one surface by sputtering or the like is prepared. The insulating film 20 is, for example, a polyimide film, and the conductive metal layer 21 is a copper metal layer.

Next, as shown in FIG.
A photosensitive resist 22 is applied to the surface of the substrate 1.

Next, as shown in FIG. 3C, light is caused to react with the photosensitive resist layer 22 to remove a resist portion corresponding to the contact probe, and a circular ring or a missing circular ring (C) reaching the conductive metal layer 21 is formed. (Shaped) shaped annular cavity 2
Form 3

Next, as shown in FIG. 3D, the lower end ring portion 3 'made of conductive metal is formed on the surface of the conductive metal layer 21 exposed in the molding cavity 23 from which the photosensitive resist 22 has been removed.
Is formed, and the molding cavity 23 is filled with the lower end ring portion 3 ′, and is brought into close contact with the inner peripheral surface of the cavity 23. Nickel plating is used as a suitable material for the lower ring portion 3 '.

Next, as shown in FIG. 8E, a conductive metal layer 21 corresponding to the lower end ring portion 3 'is formed on the insulating film 20.
To form a ring-shaped cavity 24 having a circular ring shape or a missing ring shape (C-shape). The annular molding space 24 is formed by partially removing the insulating film 20 by, for example, a laser beam.

Next, as shown in FIG. F, an upper ring portion 3 made of a conductive metal is plated and grown on the surface of the conductive metal layer 21 exposed in the annular forming space 24, and the upper ring portion 3 forms an annular shape. The inside of the cavity 24 is filled and brought into close contact with the inner peripheral surface of the molding cavity 24. Like the lower ring portion 3 ', the upper ring portion 3 is preferably plated with nickel.

Next, as shown in FIG.
The light-sensitive resist layer 22 between and in the lower ring portion 3 'is removed.

Next, as shown in FIG.
The conductive metal layer 21 between and in the lower ring portion 3 'is removed by etching. As a result, the entire ring-shaped contact probe 1 in which the lower ring portion 3 'and the upper ring portion 3 are integrated via the conductive metal layer 21 interposed therebetween.
Is obtained.

Next, as shown in FIG. I, a photosensitive resin layer 25 is applied between the lower ring portions 3 'and in the lower ring portions 3'. That is, the photosensitive resin layer 25 is formed on the lower surface of the insulating film 20.
Is applied to bury the lower ring portion 3 'in the resin layer 25, and the lower end of the lower ring portion 3' slightly protrudes from the surface of the photosensitive resin layer 25.

The photosensitive resin layer 25 is, for example, a photosensitive epoxy resin layer, and is a resin that cures in response to light. Therefore, the insulating sheet 2 is a sheet composed of a composite layer of an insulating layer composed of an insulating film 20 (polyimide film) and a photosensitive resin layer 25 (photosensitive epoxy resin layer). The photosensitive resin layer 25 imparts sufficient hardness to the entire insulating sheet 2 and enhances elasticity.

Next, as shown in FIG. J, the upper annular surface 4 and the lower annular surface 10, that is, the insulating film 2 in the upper ring portion 3.
The portion 0 and the portion of the photosensitive resin layer 25 in the lower ring portion 3 'are removed by a laser beam to form a through hole 5.

According to the above-described manufacturing method, the contact probe 1 having the entire ring shape and held within the thickness of the insulating sheet 2 shown in FIGS. 1 and 2 can be obtained.

That is, the contact probe 1 obtained by the above method has a ring portion 3 which is plated and grown in an insulating sheet 2 made of a composite resin layer and is brought into close contact with the sheet 2, and the upper annular surface 4 of the ring portion 3 Is exposed on the upper surface of the insulating sheet 2 and has a through hole 5 opened in the upper annular surface 4 in the inner region of the ring portion 3. The bottom dead center portion of the ball-shaped bump 6 of the semiconductor component is formed in the through hole 5. Accept 7
The inner peripheral edge of the upper annular surface 4 forms an annular contact seating surface 9 that annularly contacts the outer peripheral surface of the lower spherical surface of the ball-shaped bump 6 received in the through hole 5.

The contact probe 1 has a lower ring portion 3 'having a lower annular surface 10 which contacts another electronic component formed by plating exposed on the lower surface of the insulating sheet 2. 3 ′ is integrated with the upper end ring portion 3 in the insulating sheet 2.

Next, a method of manufacturing the non-penetrating contact probe 1 shown in FIGS. 3 and 4 will be described with reference to FIGS. 6A to 6J, and the above structure will be further clarified by the description of the manufacturing method.

As shown in FIG. 5A, an insulating film 20 having a conductive metal layer 21 formed on one surface by sputtering or the like is prepared. The insulating film 20 is, for example, a polyimide film, and the conductive metal layer 21 is a copper metal layer.

Next, as shown in FIG.
A photosensitive resist 22 is applied to the surface of the substrate 1.

Next, as shown in FIG. C, the light-sensitive resist layer 22 is caused to react with light to remove a resist portion corresponding to the contact probe, thereby forming a disk-shaped space 23 reaching the conductive metal layer 21. .

Next, as shown in FIG. 3D, an electrode pad 11 made of a conductive metal is formed by plating on the surface of the conductive metal layer 21 exposed in the molding cavity 23 from which the photosensitive resist 22 has been removed. The molding space 23 is filled with the electrode pad 11 and is brought into close contact with the inner peripheral surface of the space 23. Nickel plating is used as a suitable material for the electrode pad 11.

Next, as shown in FIG. E, a circular or void (C-shaped) annular molded space 24 reaching the conductive metal layer 21 corresponding to the electrode pad 11 is formed in the insulating film 20. I do. The annular molding space 24 is formed by partially removing the insulating film 20 by, for example, a laser beam.

Next, as shown in FIG. F, a ring portion 3 made of a conductive metal is grown by plating on the surface of the conductive metal layer 21 exposed in the annular forming space 24. 24, and is brought into close contact with the inner peripheral surface of the molding cavity 24.

Next, as shown in FIG. G, the photosensitive resist layer 22 between the electrode pads 11 is removed.

Next, as shown in FIG. H, the conductive metal layer 21 between the electrode pads 11 is removed by etching. As a result, the contact probe 1 in which the electrode pad 11 and the ring portion 3 are integrated via the conductive metal layer 21 is obtained.

Next, as shown in FIG.
The photosensitive resin layer 25 is applied between the two. That is, a photosensitive resin layer 25 is applied to the lower surface of the insulating film 20 and the electrode pads 11 are formed.
Is embedded in the photosensitive resin layer 25 and the electrode pad 1 is
One lower end protrudes slightly from the surface of the resin layer 25.

The photosensitive resin layer 25 is, for example, a photosensitive epoxy resin layer, and is a resin that cures in response to light. Therefore, the insulating sheet 2 is a sheet made of a composite resin layer of an insulating layer made of an insulating film 20 (polyimide film) and a photosensitive resin layer 25 (photosensitive epoxy resin layer). The photosensitive resin layer 25 imparts sufficient hardness to the entire insulating sheet 2 and enhances elasticity.

Next, as shown in FIG. J, the upper annular surface 4, that is, the portion of the insulating film 20 inside the ring portion 3 is removed by a laser beam to form a recess 5 reaching the electrode pad 11.

According to the above manufacturing method, the contact probe 1 having the ring portion 3 and the electrode pad 11 held in the thickness of the insulating sheet 2 made of the composite resin layer shown in FIGS. 3 and 4 is obtained.

That is, the contact probe 1 obtained by the above method has a ring portion 3 which is plated and grown in the insulating sheet 2 and is brought into close contact with the sheet 2, and the upper annular surface 4 of the ring portion 3 is A concave portion 5 exposed on the upper surface and opened in the upper annular surface 4 in the inner region of the ring portion 3; the concave portion 5 receives a bottom dead center portion 7 of a ball-shaped bump 6 of a semiconductor component; The inner peripheral edge of the upper annular surface 4 forms an annular contact seat surface 9 that annularly contacts the outer peripheral surface of the lower spherical surface of the ball-shaped bump 6 received in the recess 5.

The contact probe 1 has an electrode pad 11 that closes a hole 8 that is exposed on the lower surface of the insulating sheet 2 and that is in contact with another electronic component formed by plating. The unit 3 and the insulating sheet 2 are integrated.

The above-mentioned electronic parts are a semiconductor wafer, an IC package, a wiring circuit board, an IC socket, a liquid crystal display, and the like. In particular, the contact probe 1 shown in FIG. Ball-type contact provided as external contact on external electrode of wafer)
Also, the present invention can be advantageously implemented in the BGA type IC package.

[0062]

As described above, the CSP has a myriad of ball-shaped bumps arranged at very fine pitches as external contacts, but the present invention is effective in reducing the pitch of these CSP ball-shaped bumps. It is possible to provide a multi-point connection sheet for contacting ball-shaped bumps of a semiconductor component which can correspond and appropriately contact.

[Brief description of the drawings]

FIG. 1 is a plan view of a through contact probe held by an insulating sheet.

FIG. 2 is a sectional view taken along line AA in FIG.

FIG. 3 is a plan view of a non-penetrating contact probe held by an insulating sheet.

FIG. 4 is a sectional view taken along line BB in FIG. 3;

FIGS. 5A to 5J are enlarged cross-sectional views showing a method of manufacturing the through contact probe shown in FIGS.

6A to 6J are enlarged cross-sectional views showing a method of manufacturing the non-penetrating contact probe shown in FIGS.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Contact probe 2 Insulating sheet 3 Upper ring part 3 'Lower ring part 4 Upper annular surface 5 Through hole or recess 6 Ball-shaped bump 7 Bottom dead center part 8 Through hole 9 Annular contact seating surface 10 Lower annular surface 11, 18 Electrode Pad 12 Left and right slit 13 Front slit 14 Central slit 15 Sheet piece 17 Printed circuit board 19 Annular bump 20 Insulating film 21 Conductive metal layer 22 Photosensitive resist 23 Disc-shaped void 24 Annular molded void 25 Photosensitive resin layer 26 Transfer plate 27 Release agent 28 Lead 29 Open part

Claims (3)

(57) [Claims] 1. A semiconductor device comprising a plurality of contact probes (1) held within the thickness of an insulating sheet (2), the contact probes (1) being exposed from the upper surface of the insulating sheet (2). An upper end ring portion (3) for contacting the ball-shaped bump (6), and a lower end ring portion exposed from the lower surface of the sheet (2) and contacting an electrode pad (18) of another electronic component. In the method for producing a multipoint connection sheet having (3 ′), a step of integrally plating and growing the upper end ring portion (3) from one surface of the conductive metal layer (21); A step of integrally plating and growing the lower end ring portion (3 ') made of a conductive metal from the other surface of the substrate, and removing the conductive metal layer between the lower end ring portions (3') by etching. 3
') And an upper end ring portion (3) including a step of forming the contact probe (1) integrated via a conductive metal layer portion interposed therebetween, for contacting a ball-shaped bump of a semiconductor component. Manufacturing method of connection sheet. 2. A semiconductor device comprising a plurality of contact probes (1) held within the thickness of an insulating sheet (2), the contact probes (1) being exposed from the upper surface of the insulating sheet (2) and having a plurality of contact probes. An electrode pad (11) having a ring portion (3) for contacting the ball-shaped bump (6) and exposed from the lower surface of the sheet (2) to contact an electrode pad (18) of another electronic component. In the method for producing a multipoint connection sheet having the above-mentioned method, a step of integrally growing the ring portion (3) from one surface of the conductive metal layer (21), and the other surface of the conductive metal layer (21). A step of integrally growing the electrode pad (11) made of conductive metal by plating, and removing the conductive metal layer between the electrode pads (11) by etching to form the electrode pad (11) and the ring portion (3). Is between the two Preparation of multi-point connection sheet of balls shaped bump contacts of the semiconductor component including a step of forming a conductive metal layer portion are integrated via the above contact probe (1) to. 3. A step of applying a photosensitive resin sheet (25) which reacts to light and hardens on one surface of the insulating film (20) to form an insulating sheet (2) made of a composite resin sheet. The method for producing a multi-point connection sheet for contacting a ball-shaped bump of a semiconductor component according to claim 1 or 2.