JP3245444B2 - Wafer inspection method - Google Patents

Wafer inspection method

Info

Publication number
JP3245444B2
JP3245444B2 JP9206492A JP9206492A JP3245444B2 JP 3245444 B2 JP3245444 B2 JP 3245444B2 JP 9206492 A JP9206492 A JP 9206492A JP 9206492 A JP9206492 A JP 9206492A JP 3245444 B2 JP3245444 B2 JP 3245444B2
Authority
JP
Japan
Prior art keywords
skip
wafer
test
ics
inspection method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP9206492A
Other languages
Japanese (ja)
Other versions
JPH05267417A (en
Inventor
幹久 白神
Original Assignee
九州日本電気株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 九州日本電気株式会社 filed Critical 九州日本電気株式会社
Priority to JP9206492A priority Critical patent/JP3245444B2/en
Publication of JPH05267417A publication Critical patent/JPH05267417A/en
Application granted granted Critical
Publication of JP3245444B2 publication Critical patent/JP3245444B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P90/00Enabling technologies with a potential contribution to greenhouse gas [GHG] emissions mitigation
    • Y02P90/30Computing systems specially adapted for manufacturing

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Image Processing (AREA)
  • Management, Administration, Business Operations System, And Electronic Commerce (AREA)
  • Image Analysis (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、ウエハ検査方法に関す
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer inspection method .

【0002】[0002]

【従来の技術】従来のICテストシステムのスキップ機
能におけるスキップモニタ機能では、図4に示すよう
に、4枚目以降のウエハ測定開始点より連続した3個の
ICをモニタし、スキップ機能を保証していた。
2. Description of the Related Art In a skip monitor function of a skip function of a conventional IC test system, as shown in FIG. 4, three continuous ICs are monitored from a wafer measurement start point of a fourth wafer and thereafter to guarantee the skip function. Was.

【0003】[0003]

【発明が解決しようとする課題】上述した従来のテスト
システムのスキップモニタ機能は、4枚目以降のウエハ
測定開始点より直ちに連続した3個のICのモニタを開
始していた。
The skip monitor function of the conventional test system described above has started monitoring three consecutive ICs immediately from the start point of measurement of the fourth and subsequent wafers.

【0004】つまり、そのテスト項目については、ウエ
ハの偏った一部である連続したICしか測定しておらず
ウエハ面内のバラツキをモニタしていないという問題点
がある。
[0004] In other words, for the test items, Orazu only continuous IC is a part that biased the wafer is measured
There is a problem that variations in the wafer surface are not monitored .

【0005】本発明の目的は、上述した前記問題点を解
消したウエハ検査方法を提供することにある。
[0005] An object of the present invention is to solve the above-mentioned problems.
It is an object of the present invention to provide an erased wafer inspection method .

【0006】[0006]

【課題を解決するための手段】前記目的を達成するた
め、本発明に係るウエハ検査方法は、ロットスタートの
1枚目のウエハから所定の枚数目のウエハまで全項目テ
ストを行ってスキップ条件を満足するか否かのスキップ
条件判定を行い、前記スキップ条件を満足した場合、前
記所定の枚数目のウエハの次のウエハの面内にある複数
のICの内、所定の複数点にある連続しない複数のモニ
タするICに前記全項目テストを行うものである。
In order to achieve the above object, a wafer inspection method according to the present invention performs a test of all items from a first wafer of a lot start to a predetermined number of wafers to determine a skip condition. A skip condition determination is made as to whether or not the condition is satisfied. If the skip condition is satisfied, discontinuity at a plurality of predetermined points among a plurality of ICs in a plane of a wafer next to the predetermined number of wafers is determined. The above-described all item test is performed on a plurality of ICs to be monitored.

【0007】[0007]

【作用】スキップモニタ工程において、任意のICを任
意の数だけモニタする。
In the skip monitor process, an arbitrary number of ICs are monitored.

【0008】[0008]

【実施例】次に本発明について図を用いて説明する。図
1は、本発明の一実施例を示すブロック図である。
BRIEF DESCRIPTION OF THE DRAWINGS FIG. FIG. 1 is a block diagram showing one embodiment of the present invention.

【0009】図1において、101は、テスト装置全体
の制御及びスキップの制御、その他テストに関わる全て
の制御を司るコントローラである。
In FIG. 1, reference numeral 101 denotes a controller for controlling the entire test apparatus, skip control, and all other controls related to the test.

【0010】102は、タイミング発生器で、被測定デ
バイス(以下、DUTという)に印加する電圧,電流の
タイミングを制御する。
Reference numeral 102 denotes a timing generator which controls the timing of voltage and current applied to a device under test (hereinafter, referred to as a DUT).

【0011】103はパタン発生器で、DUTの入出力
の期待値を発生する。フォーマットコントローラ104
は、テストヘッドを通してDUTへ印加する電圧,電流
波形及びDUTから出力される波形の制御を行う。DC
ユニット105は、DCユニットでテストヘッドを通し
てDUTのDCパラメータをテストする。
Reference numeral 103 denotes a pattern generator which generates an expected value of input / output of the DUT. Format controller 104
Controls the voltage and current waveform applied to the DUT through the test head and the waveform output from the DUT. DC
Unit 105 tests the DC parameters of the DUT through the test head at the DC unit.

【0012】106はDPSで、DUTにバイアス電
圧,電流を供給する。
A DPS 106 supplies a bias voltage and a current to the DUT.

【0013】107はレベルで、テストヘッドに内蔵さ
れDUTにパルスを印加するパルスドライバのレベル及
びDUTのパルス出力の判定レベルを供給する。108
はテストヘッドで、DUTとテスト装置インターフェイ
スとなる。
A level 107 supplies a level of a pulse driver built in the test head for applying a pulse to the DUT and a determination level of a pulse output of the DUT. 108
Is a test head, which serves as an interface between the DUT and the test equipment.

【0014】図2は本発明の流れを示すフローチャート
である。まず、図2のステップ10でロットスタートす
る。ステップ20でスキップ条件設定(テスト項目,テ
スト回路,基準歩留り値)と条件出しを行う。ステップ
30でスキップ条件判定を行い満足ならば、ステップ4
0のスキップ可テスト項目、不満足ならば、ステップ5
0のスキップ不可テスト項目として、ステップ60のス
キップ開始となる。
FIG. 2 is a flowchart showing the flow of the present invention. First, a lot is started in step 10 of FIG. In step 20, skip condition setting (test item, test circuit, reference yield value) and condition setting are performed. If the skip condition is determined in step 30 and the condition is satisfied, step 4
0 skippable test item, if unsatisfied, step 5
The skip start of step 60 is started as a 0 non-skippable test item.

【0015】スキップが行われ、ステップ70の次ウエ
ハの先頭ICにくると、ステップ80の一時スキップを
解除する。ステップ90でスキップモニタ条件設定(モ
ニタのICの数、モニタICの位置)を行い、ステップ
100でスキップモニタを開始する。
When the skip is performed and the head IC of the next wafer in step 70 is reached, the temporary skip in step 80 is canceled. In step 90, skip monitor conditions are set (the number of monitor ICs and the position of the monitor IC), and in step 100, skip monitor is started.

【0016】ステップ110のモニタテスト項目で判定
を行い、Passなら、そのままスキップ続行項目とな
り、Failなら、ステップ120でスキップ解除テス
ト項目となり、ステップ130で追加され、ステップ1
40で同一ウエハ内テスト続行となる。
The judgment is made based on the monitor test item in step 110. If Pass, the skip continuation item is used as it is. If Fail, the skip elimination test item in step 120 is added.
At 40, the in-wafer test is continued.

【0017】そのウエハが終ると、ステップ70の次ウ
エハの先頭ICへフィードバックされる。ただし、モニ
タでFailとなったテストのスキップは解除されたま
まである。
When the wafer is finished, the data is fed back to the leading IC of the next wafer in step 70. However, the skip of the test that failed on the monitor remains released.

【0018】次に図2の一連の流れを模式的な図3,図
4を使って説明する。まず、従来の技術(図4)も本発
明(図3)もロットスタートから3枚目ウエハ(この例
では、3枚目の途中でスキップ条件を満足するものとす
る)の途中までスキップ条件判定を行うため、全項目テ
ストを行う。
Next, a series of flows in FIG. 2 will be described with reference to FIGS. First, in both the prior art (FIG. 4) and the present invention (FIG. 3), skip condition determination is performed from the start of the lot until the middle of the third wafer (in this example, the skip condition is satisfied in the middle of the third wafer). All items are tested to perform

【0019】そして、3枚目ウエハの残りのICにおい
てスキップを開始する。そして、3枚目ウエハ終了後、
4枚目ウエハではスキップが一時解除され、モニタが開
始される。
Then, skipping is started in the remaining ICs of the third wafer. After the third wafer is completed,
The skip is temporarily canceled for the fourth wafer, and monitoring is started.

【0020】従来の技術では図4に示すように4枚目以
降のウエハ測定開始点より連続した3個のIC(個数は
任意に設定できるが、この例では3個とする)をモニタ
している。
In the prior art, as shown in FIG. 4, three continuous ICs (the number can be set arbitrarily, but in this example, three ICs) are monitored from the start point of measurement of the fourth and subsequent wafers. I have.

【0021】これに対し、本発明はモニタするICをウ
エハ面内の任意の3点としているためにウエハ面内のバ
ラツキをモニタが可能となり、より信頼性の高いテスト
が可能となる。
On the other hand, according to the present invention, the number of ICs to be monitored is set to any three points in the wafer surface, so that variations in the wafer surface can be monitored, and a more reliable test can be performed.

【0022】モニタされたICは全テスト項目のテスト
を行い上述したスキップ条件判定でスキップ可テスト項
目となったテスト項目が3個のICともPassなら、
引き続きスキップ項目で3個のICの内1つでもFai
lになれば、スキップ解除テスト項目となり、以降ロッ
ト終了まで同テスト項目はスキップ対象外となる。
The monitored IC performs a test of all test items, and if the three test items that have become skippable test items in the skip condition determination described above are Pass,
Continue to skip one item out of three ICs
If it becomes 1, the test item is a skip release test item, and the test item is not skipped until the end of the lot.

【0023】ウエハが更新されると、また3個のICを
モニタして上述したことを繰り返す。ただし、本例では
モニタ個数を3個に設定するものとする。
When the wafer is updated, three ICs are monitored again and the above operation is repeated. However, in this example, the number of monitors is set to three.

【0024】[0024]

【発明の効果】以上説明したように本発明によれば、任
意の個数の任意のICで、スキップモニタ機能を実行で
きるため、ウェハ面内の品質のバラツキを的確に判断
し、それをスキップ機能ヘフィードバックすることによ
り、スキップ機能の信頼性向上を図ることができる。
らに、スキップ条件を満足した場合、所定の枚数目のウ
エハの次のウエハの面内で隣接しないモニタ対象のIC
を選んで測定して偏りを改善することができ、より信頼
性の高い検査を行うことができる。
As described above , according to the present invention, the skip monitor function can be executed by an arbitrary number of arbitrary ICs, so that the quality variation in the wafer surface can be accurately determined, and the skip function can be performed. By feeding back the data, the reliability of the skip function can be improved. Sa
In addition, when the skip condition is satisfied, a predetermined number of w
ICs to be monitored that are not adjacent in the plane of the wafer following EHA
Can be selected and measured to improve the bias, more reliable
High-quality inspection can be performed.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の一実施例を示すブロック構成図であ
る。
FIG. 1 is a block diagram showing an embodiment of the present invention.

【図2】本発明の一実施例に係る動作を示すフローチャ
ートである。
FIG. 2 is a flowchart illustrating an operation according to an embodiment of the present invention.

【図3】本発明の動作を示す模式図である。FIG. 3 is a schematic diagram showing the operation of the present invention.

【図4】従来例の動作を示す模式図である。FIG. 4 is a schematic diagram showing the operation of a conventional example.

【符号の説明】[Explanation of symbols]

101 コントローラ 102 タイミング発生器 103 パタン発生器 104 フォーマットコントローラ 105 DCユニット 106 DPS 107 レベル 108 テストヘッド Reference Signs List 101 Controller 102 Timing generator 103 Pattern generator 104 Format controller 105 DC unit 106 DPS 107 Level 108 Test head

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 ロットスタートの1枚目のウエハから所
定の枚数目のウエハまで全項目テストを行ってスキップ
条件を満足するか否かのスキップ条件判定を行い、 前記スキップ条件を満足した場合、前記所定の枚数目の
ウエハの次のウエハの面内にある複数のICの内、所定
の複数点にある連続しない複数のモニタするICに前記
全項目テストを行うことを特徴とするウエハ検査方法。
1. A skip condition determination as to whether or not a skip condition is satisfied is performed by performing all item tests from a first wafer of a lot start to a predetermined number of wafers, and when the skip condition is satisfied, A wafer inspection method comprising: performing the all-item test on a plurality of discontinuous monitoring ICs at a plurality of predetermined points among a plurality of ICs in a plane of a wafer next to the predetermined number of wafers. .
JP9206492A 1992-03-18 1992-03-18 Wafer inspection method Expired - Lifetime JP3245444B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9206492A JP3245444B2 (en) 1992-03-18 1992-03-18 Wafer inspection method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9206492A JP3245444B2 (en) 1992-03-18 1992-03-18 Wafer inspection method

Publications (2)

Publication Number Publication Date
JPH05267417A JPH05267417A (en) 1993-10-15
JP3245444B2 true JP3245444B2 (en) 2002-01-15

Family

ID=14044050

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9206492A Expired - Lifetime JP3245444B2 (en) 1992-03-18 1992-03-18 Wafer inspection method

Country Status (1)

Country Link
JP (1) JP3245444B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11233581A (en) * 1998-02-13 1999-08-27 Mitsubishi Electric Corp Wafer testing method
JP2005538562A (en) * 2002-09-13 2005-12-15 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Reduced chip test method at wafer level

Also Published As

Publication number Publication date
JPH05267417A (en) 1993-10-15

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