JP3241208B2 - Active matrix substrate, liquid crystal display device using the same, and method of manufacturing the same - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an active matrix substrate for a flat display device such as a liquid crystal display device, a liquid crystal display device using the same, and a method of manufacturing the same. More specifically, an active matrix substrate that prevents cracks in an insulating film and separation of a metal film serving as a wiring from occurring when cutting a display panel portion from a glass substrate, thereby preventing a decrease in reliability.
The present invention relates to a liquid crystal display device using the same and a method for manufacturing the same.

[0002]

2. Description of the Related Art Liquid crystal display devices (hereinafter referred to as LCDs).
Are provided with at least two glass substrates on each of which a transparent electrode is formed and adhered to the periphery while maintaining a certain gap, a liquid crystal material injected into the gap, and each provided outside the two glass substrates. And a backlight and the like. Among them, a switching element such as a thin film transistor (hereinafter, referred to as a TFT) is provided in each pixel, and an active matrix LCD that drives each pixel by a scanning signal and a data signal has characteristics such as a high viewing angle and a high contrast. And OA LCDs.

[0003] Such an active matrix type LCD
FIG. 4 is an equivalent circuit schematic diagram of an active matrix substrate which is one glass substrate on which the TFTs and signal lines are formed. In FIG. 4, 11 is a TFT, 12 is a pixel electrode,
13 is a storage capacitor, 14 is a gate wiring (signal line), and 15 is a source wiring (signal line). An input terminal 3 is provided at an end of each of the signal lines 14 and 15, and each input terminal 3 is connected to the short ring 4 via a connection wiring 4a made of a metal film or the like. The signal lines, TFTs, and the like are prevented from being destroyed by electrostatic discharge between the lines. This active matrix substrate is adhered to the other counter substrate provided with at least the counter electrode with a sealant while maintaining a constant gap, and after injection of the liquid crystal material, cut at a cutting portion indicated by P in FIG. An LCD is formed.

FIGS. 5 and 6 show a plan view and a sectional view of the input terminal 3 respectively. In FIGS. 5 and 6, SiN, SiO ₂ , Ta ₂ O ₅
Is formed by a method such as a sputtering method. The insulating film 2 is a protective film for the glass substrate 1, and the insulating film 2 may be formed as a dielectric of the storage capacitor when a storage capacitor needs to be formed.

A transparent conductive film such as indium tin oxide (hereinafter, referred to as ITO) is formed on the insulating film 2 by a method such as a sputtering method, and is patterned by a method such as a photolithography method. A pixel electrode is formed (not shown). At this time, the input terminals 3 are simultaneously formed using the ITO film.

Next, a metal film of Cr, Ta, Ti or the like is formed by a method such as a sputtering method, and is patterned by a method such as a photolithography method to form a TFT gate electrode (not shown) and a gate wiring. (Signal line) 14
(See FIG. 4). At this time, a short ring 4 and a connection wire 4a connecting the short ring 4 and the input terminal 3 are formed of the same metal film outside the input terminal 3 at the same time. This short ring 4 has a gate wiring (signal line) 14.
The source wiring (signal line) formed between the gate wiring and the gate wiring is electrically short-circuited to prevent the signal lines and the TFT from being destroyed due to electrostatic discharge. Therefore, the short ring 4 is formed on the LCD and removed before the final test.

Further, a gate insulating film of a TFT, a semiconductor layer,
An ohmic contact layer, a source electrode, a source wiring, a drain electrode, and a protective film are formed. When the gate insulating film of the TFT is provided, the insulating film 5 is also formed on the gate wiring 14 at the same time. This insulating film 5 is made of SiN, Si
Since it is made of O _{2 and the} like, it is preferable to protect the gate wiring 14 from chemicals used in a later process and to prevent electrolytic corrosion of the wiring due to a potential difference between the wirings and attached moisture. And for the electrical connection with the lead terminal of the external drive circuit,
The insulating film only on the upper part of the input terminal 3 is removed. This insulating film 5 is also formed on the short ring 4 and is partially removed when the short ring 4 needs to be grounded. However, since the pattern is not usually complicated, the insulating film 5 is formed as shown in FIG. As shown, the connection wiring 4a outside the input terminal 3 and the upper part of the short ring 4 are left.
Thereafter, an alignment film (not shown) and the like are provided, and an active matrix substrate (TFT array substrate) is completed.

A liquid crystal material is sandwiched between the substrate and a counter substrate provided with a color filter, a counter electrode, and the like. The glass substrate is cut, and an external drive circuit is connected to the input terminal 3 by TAB (Tape A).
LCD (LCD) is formed by connection of the LCD (automatic bonding).

An LCD having a different terminal structure is disclosed in Japanese Patent Laid-Open Publication No. Hei 18-18076, and as shown in FIG. 8, a gate wiring (not shown), a short ring 4, a connection wiring 4a and the like are formed of an insulating film. There is known a structure which is formed directly on the glass substrate 1 without any interposition. However, the insulating film 5 is left above the connection wiring 4a for the above-described reason.

[0010]

As described above, in the manufacture of LCDs, each signal line is usually short-circuited by a short ring at the end of each signal line on an active matrix substrate on which TFTs and signal lines are formed. Signal lines and T due to static electricity
The FT is prevented from being destroyed, and the short ring is removed by cutting the glass substrate after assembly. However, when the substrate is chamfered at the time of cutting the substrate, cracks are formed in the insulating films 2 and 5 on the substrate as shown in FIG. 7 or FIG. This causes a problem that reliability is reduced.

Further, when such a floating occurs, T
AB connection, after completion of LCD, TAB by various tests
However, there is a problem that the input terminal is detached from the board when the TAB is replaced by finding a defect, for example, an IC failure on the TAB.

This tendency is remarkable in the case shown in FIGS. 6 and 7 in which insulating films are provided above and below the connection wiring 4a, but also in the case shown in FIGS. There is a similar problem that the input terminal is peeled off from the substrate due to cracking or turning up when cutting the substrate.

On the other hand, FIG. 3 of Japanese Unexamined Patent Publication No. 2-19839 discloses a diagram in which a cut portion of a glass substrate has no insulating film. This is because a capacitor is inserted between a short ring and an input terminal. In the figures for explaining the above, no insulating film other than the insulating film for the capacitor is described, and no reference is made to the relationship between the place where the insulating film should be provided and the place where the insulating film should not be provided.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and has an active matrix substrate capable of preventing floating and peeling of wiring and terminals even after cutting a glass substrate, a liquid crystal display device using the same, and The purpose is to provide the manufacturing method.

[0015]

According to the active matrix substrate of the present invention, switching elements are formed in a matrix on a glass substrate, and a plurality of signal lines for supplying signals to the switching elements are provided vertically and horizontally. The ends of the plurality of signal lines are connected to the short ring by connection wiring via input terminals, respectively, and an insulating film is provided at least on the signal line, and the short ring is used to remove the short ring portion. An active matrix substrate having a cut portion in a connection line between the input terminal and a region where an insulating film is not provided on the connection line over a range of at least a thickness of a glass substrate in the cut portion of the connection line. Are formed.

An insulating film is provided at least below the input terminal and between the glass substrate, and an insulating film is formed below the connection wiring over a range of at least the thickness of the glass substrate at a cut portion of the connection wiring. It is preferable to form a region where no metal is provided, since this protects the surface of the glass substrate, ensures adhesion of the metal film, and further improves reliability.

The fact that the signal lines and the connection wirings are made of a metal film and the input terminals are made of a conductive oxide film reduces the electric resistance of the signal lines and allows the input terminals to use a conductive oxide film. This is preferable because the oxidation does not proceed when connecting to the lead terminal of the external drive circuit board, and the connection can be surely made.

The liquid crystal display device of the present invention comprises a TFT substrate in which at least thin film transistors are provided in a matrix on a glass substrate and a plurality of signal lines for supplying signals to the thin film transistors are provided vertically and horizontally, and at least a counter electrode is provided. A liquid crystal display device in which a liquid crystal material is sandwiched between an opposing substrate and an input terminal provided at an end of a signal line of the TFT substrate, and an input terminal is provided from the input terminal to an edge of the TFT substrate. A wiring is provided, and an insulating film is provided on at least the signal line, and at least a region where the insulating film is not provided on the wiring at the edge of the TFT substrate is formed.

Further, according to the method of manufacturing a liquid crystal display device of the present invention, a thin film transistor and a signal line are formed, and one end of the signal line is connected to a short ring via an input terminal via a connection wiring, and at least a counter electrode. A method for manufacturing a liquid crystal display device in which a glass substrate is cut and then a short ring is removed after the glass substrate is attached to the other glass substrate provided with an insulating film on at least an upper layer of the signal line, and An insulating film is not provided in an upper layer and a lower layer of the connection wiring in a region of at least the thickness of the glass substrate of the connection wiring between the short ring and the input terminal,
The glass substrate is cut at a portion where the insulating film is not provided, and a short ring is removed.

[0020]

According to the active matrix substrate of the present invention,
An end of each signal line is connected to a short ring by a connection wiring via an input terminal, each signal line is covered with at least an insulating film, and a cut portion of the glass substrate for removing the short ring has at least a glass substrate. Since the insulating film is not provided over a region longer than the thickness, floating or peeling of the connection wiring or the input terminal portion due to cracks in the insulating film does not occur when the glass substrate is cut.

That is, since the insulating film has a glassy property, cracks are likely to be formed when cutting the glass substrate.
According to the present invention, since the insulating film is not formed in the cut portion of the glass substrate, the floating or peeling of the wiring due to the crack in the insulating film does not occur. Moreover, since the area where the insulating film is not provided is set to a length equal to or longer than the thickness of the glass substrate, even if the glass cutting proceeds in an oblique direction, for example, in a direction of 30 °, the broken portion does not advance in the insulating film portion.

Further, according to the LCD of the present invention, since the insulating film is not provided at the cut portion which is the end of the TFT substrate,
There is no floating wiring or input terminal, and the input terminal does not peel off even after the TAB is connected and then peeled off.

Further, according to the LCD manufacturing method of the present invention, a region where no insulating film is provided is formed in a cut portion of the glass substrate, and the glass substrate is cut in the region. The substrate can be cut.

[0024]

Next, an active matrix substrate according to the present invention,
An LCD using the same and a manufacturing method thereof will be described.

As described above, in the LCD, two transparent insulating substrates are adhered to each other by a sealing agent or the like while maintaining a certain gap, and a liquid crystal material is injected into the gap, whereby the liquid crystal material becomes 2 The structure is sandwiched between two substrates, and is formed by providing, for example, a polarizing plate on both sides thereof, and further providing a backlight, a driving circuit, and the like.

On one of the two substrates, at least a TFT and a pixel electrode are provided for each pixel on a glass substrate, and an alignment film and, if necessary, a storage capacitor are provided. A signal line such as a gate line or a source line is provided, and a TFT array substrate (in the present specification, a glass substrate cut into an LCD is called a TFT array substrate, and is connected to a short ring. The substrate is referred to as an active matrix substrate). This TFT array substrate is an active matrix substrate in which the ends of the signal lines are connected by a short ring as shown in FIG. 4 until the middle of the manufacturing process. In the present invention, in order to remove the short ring from the active matrix substrate, the laminated film structure of the cut portion of the glass substrate is improved. The structure of the cut portion will be described in detail by the following specific examples.

The other substrate is a counter substrate on which a transparent electrode facing each pixel electrode of the TFT array substrate is formed. For example, a glass substrate similar to the TFT array substrate may be used. The electrodes are not particularly limited. For example, like the TFT array substrate,
O, tin oxide, indium oxide, or the like is used, and is provided by sputtering and patterning.

On the opposite substrate, in addition to the transparent electrode,
For example, a normal alignment film, a black mask for shielding light between pixels, and a color filter in the case of a color liquid crystal are provided. There is no particular limitation on such color filters, and commonly used color filters of three primary colors, red, green, and blue, and a single color filter can be used.

There is no particular limitation on the liquid crystal material used for the LCD of the present invention. For example, a liquid crystal material used for a normal LCD such as a cyano nematic liquid crystal or a fluorine nematic liquid crystal can be used.

In the active matrix substrate and the LCD according to the present invention, the insulating portion is not provided at the cutting portion of the connection wiring connecting the short ring and the input terminal at the above-mentioned glass substrate cutting portion, and the signal line is provided on the other signal lines. It is characterized in that it has a structure provided with an insulating film for protection. As a result, the insulating film is not damaged when cutting the substrate,
Cracks do not occur in the insulating film, wiring and input terminals are turned up, and no floating or peeling occurs. Therefore, even if the TAB is peeled off from the input terminal for replacing the TAB, the problem that the insulating film and the input terminal are peeled off can be prevented.

The active matrix substrate of the present invention is LC
D is particularly effective for use in electroluminescent displays (EL).
D), electrochromic display (EC
It is also used for flat display devices such as D).

Next, the structure of the input terminal portion and the cut portion of the active matrix substrate of the present invention will be described with reference to the drawings.

Embodiment 1 FIG. 1 is a partial plan view of an input terminal and a short ring portion of an active matrix substrate according to one embodiment of the present invention, and FIG. 2A is a cross-sectional view taken along the line AA of FIG. It is.

1 and ₂ , an insulating film 2 such as SiN, SiO ₂ , Ta ₂ O ₅ or the like is laminated on a cleaned glass substrate 1. The thickness of the glass substrate 1 is usually 0.5 to 2.0 mm
It is about.

The insulating film 2 is a protective film for the glass substrate 1 and has a thickness of about 300 to 1000 nm. The insulating film 2 may be formed simultaneously with the dielectric of the storage capacitor. In the present invention, in order to prevent the insulating film 2 from being cut when the substrate is cut and the insulating film 2 from being cracked, the length of the insulating film 2 from the cut portion P is at least the thickness of the glass substrate 1 or more. That is, a length of about 1 mm or more, more preferably twice or more the thickness of the glass substrate 1,
That is, the pattern is formed such that the end 2a of the insulating film 2 is formed on the inner side of about 2 mm or more.

Next, a TFT array is formed. First, a transparent conductive film made of ITO, tin oxide, indium oxide, or the like is formed by a method such as a sputtering method, and is patterned by a method such as a photolithography technique. A pixel electrode (not shown) is formed.

The reason why a transparent conductive film is used for the input terminal 3 is as follows.
Since the process is performed by heating to a maximum of 300 ° C. in the process until AB connection, the metal film is easily oxidized, and if oxidized, the connection is insufficient and the reliability is reduced. This is because, since the material is a substance, the oxidation does not proceed further and the insulating property does not occur.

The thickness of the transparent conductive film is usually 50 to 2
The thickness is preferably about 00 nm, but in order to obtain the luminance required for an LCD, it is preferable to adjust the thickness to about 80 to 150 nm.

Next, for example, C
A metal film such as r, Ta, Ti, Mo, etc. having a thickness of 100 to 5
A film is formed by a method such as a sputtering method so as to have a thickness of about 00 nm, a mask is formed by, for example, exposure and development, and a pattern is formed by a method such as a photolithography technique of etching.
Gate electrode (not shown) and a gate wiring (signal line) 14 connected to the gate electrode. At this time, the short ring 4 and the connection wiring 4a are simultaneously formed outside the input terminal 3, and patterning is performed so that the gate wiring 14 and the connection wiring 4a are in electrical contact with the end of the input terminal 3. The short ring 4 electrically connects a gate line (signal line) 14 formed between the pixels and a source line (signal line) formed later between the pixels and between the gate line and the source line. This is to prevent a short circuit and breakage of the signal line and the TFT due to static electricity or the like.

Further, a gate insulating film (not shown), a semiconductor layer and an ohmic contact layer, a source electrode and a source wiring, and a protective film are formed by a plasma CVD method or the like.

Simultaneously with the formation of the gate insulating film, patterning is performed so as to remain as an insulating film 5 on the gate wiring 14 and a part of the connection wiring 4a. The insulating film 5 is preferably made of, for example, SiN, SiO ₂ , Ta ₂ O _{5, and the} like, and the thickness of the insulating film 5 provides sufficient insulating properties and characteristics as a TFT gate insulating film. It is preferable that the thickness is about 200 to 1000 nm from the viewpoint that it can be performed.

The insulating film 5 on the gate wiring 14 is effective for preventing electrolytic corrosion and the like. That is, a plurality of signal lines such as gate wirings have different potentials for each signal line. If moisture adheres to the surface, electrolysis based on the potential difference occurs, and a metal film such as the signal line is corroded. However, by being covered with the insulating film, such electrolytic corrosion is prevented. Similarly, moisture easily penetrates into a connection portion between the connection wiring 4a and the input terminal 3, but it is preferable that the connection portion is covered with the insulating film 5 so that penetration of moisture can be prevented.

On the other hand, as described above, if an insulating film is formed at the cut portion P of the glass substrate 1 for removing the short ring 4, cracks occur when the glass substrate 1 is cut,
The influence of the crack easily causes the input terminal 3 to float or peel off. Therefore, as in the case of the insulating film 2 described above, the cut portion P has at least a region having the same length as the thickness of the glass substrate 1, and more preferably a region having a length at least twice the thickness of the glass substrate 1. There is a feature of the present invention in that the insulating film is not left.

Here, the length of the region where the insulating film is not provided in the cut portion P is the same as the thickness of the glass substrate 1, more preferably 2
The reason for making the number twice or more will be described. FIG. 2B schematically shows how the glass substrate 1 breaks when the substrate 1 is cut. When cutting the glass substrate 1, a method of scribing and breaking is usually used. That is, FIG.
As shown in (b), a scribe groove 16 is formed along the cutting line on the back surface side of the glass substrate 1, and a crack Q is formed from the scribe groove 16 by applying an impact, and the glass substrate 1 is broken. Although the direction of the crack Q changes depending on the state of formation of the scribe grooves 16 and the state of the glass substrate 1, usually, the direction of FIG.
The angle θ shown in (b) is about ± 30 ° or less. Therefore, the length m of the left and right areas around the scribe groove is
Is within the range of about 1/2 of the thickness t of the glass substrate 1, and the range 2m without the insulating film needs to be at least 2m = t, which is the same as the thickness t of the glass substrate 1. However, the cracking direction θ can be about 45 °, and when 45 °, m = t, and there is misalignment. Therefore, as a range without an insulating film, the thickness of the glass substrate 1 is 2m = 2t. More preferably, it is at least about twice the length t.

Next, a semiconductor layer, a contact layer, a source / drain electrode, and a source wiring are formed by a normal TFT manufacturing process, and a protective film is formed thereon. The source wiring (signal line) is also formed of a metal film in the same manner as the above-mentioned gate wiring, is connected to the input terminal for the source wiring formed simultaneously with the input terminal 3 for the gate wiring, and is connected to the input terminal by the connection wiring. The short ring is formed so as to be connected thereto. When the connection wiring is formed, patterning is performed in advance so that the insulating film does not exist at least in the region of the thickness of the glass substrate at the cut portion and that the insulating film does not remain on the input terminal portion. Further, the protective film formed after the formation of the source wiring is also formed so that the insulating film does not exist in at least the region of the cut portion at least the thickness of the glass substrate, more preferably at least twice the thickness of the glass substrate. Is patterned. The final protective film same SiN with the aforementioned insulating film, etc. can be used SiO _2, Ta ₂ O _5, also the thickness Similarly 300-100
It is sufficient to provide about 0 nm.

The active matrix substrate and the opposing substrate on which the opposing electrode is formed are adhered to each other, and the short ring portion is cut and removed. At this time, by cutting the region where the insulating film is removed, the region of the portion without the insulating film is formed at least the thickness of the glass substrate,
Even if the broken part runs obliquely, no insulating film exists in the wiring part at the edge of the TFT array substrate of the LCD. Therefore, even if the cut portion is chamfered, the input terminal portion does not float or peel off, and a highly reliable LCD can be obtained. The LCD is completed by connecting a lead terminal of an external drive circuit (not shown) to the input terminal by TAB or the like.

Embodiment 2 Another terminal structure of the active matrix substrate of the present invention will be described with reference to FIG. FIG. 3 is an explanatory cross-sectional view of the input terminal 3 and the short ring 4 similar to FIG. In FIG. 3, FIG.
The same reference numerals are given to the same parts as.

In this embodiment, the gate wiring (signal line) 14, the connection wiring 4a, the short ring 4, and the input terminal 3 are directly provided on the glass substrate 1 without forming the insulating film 2 of the first embodiment. The only difference is that the input terminal 3 is formed after the gate wiring 14, the connection wiring 4a, the short ring 4, and the gate electrode (not shown) together with the pixel electrode (not shown). Therefore, a metal film for the gate line 14 and the short ring 4 is directly formed and patterned without providing the insulating film 2 of the first embodiment, and then a transparent conductive film such as a pixel electrode (not shown) or ITO for the input terminal 3 is formed. The insulating film 5 is provided on the upper layer of the gate wiring 14 and on the connection between the connection wiring 4a and the input terminal 3 by forming the same as in the first embodiment. This is exactly the same as the first embodiment in that an insulating film is not provided in a region longer than the length corresponding to the thickness of the substrate.

Also in this embodiment, the surface of the signal line is covered with an insulating film to prevent electrolytic corrosion and the like, and since the insulating film is not provided in the cut portion, the insulating film is also used when cutting the glass substrate. Cracks do not occur, the wiring and input terminals can be prevented from peeling, and the reliability is greatly improved.

[0050]

According to the active matrix substrate of the present invention, at least the upper portion of the signal line is covered with an insulating film to protect against corrosion and the like, and the insulating film is provided at the cut portion when cutting and removing the short ring. Is not provided, no floating or peeling of wiring or input terminals due to cracks in the cut portion occurs.

As a result, in the LCD using the active matrix substrate of the present invention, even if the cut portion at the end of the TFT substrate is chamfered, the input terminal does not float or peel off, and the reliability is improved. After the drive circuit board or the like is connected to the input terminal by TAB or the like, a failure of the IC or the like occurs and the input terminal does not peel off even if the TAB is replaced. Therefore, while improving the yield,
Repair work can also be facilitated.

Further, according to the LCD manufacturing method of the present invention, since the glass substrate is cut at a place where the insulating film is not provided, the glass substrate may be cracked by the cracking of the insulating film accompanying the cutting or the chamfering polishing after the cutting. And the like, and a highly reliable LCD can be obtained.

[Brief description of the drawings]

FIG. 1 is an explanatory partial plan view of an input terminal and a short ring portion of an embodiment of an active matrix substrate of the present invention.

FIG. 2 is an explanatory sectional view taken along line AA of FIG. 1;

FIG. 3 is an explanatory sectional view of an input terminal and a short ring portion of another embodiment of the active matrix substrate of the present invention.

FIG. 4 is an equivalent circuit schematic diagram of an active matrix substrate used for an LCD.

FIG. 5 is a partial plan explanatory view of an input terminal portion of an active matrix substrate used for a conventional LCD.

FIG. 6 is an explanatory sectional view taken along line BB of FIG. 5;

7 is an explanatory sectional view showing a defective state after cutting the substrate of FIG. 6;

FIG. 8 is an explanatory partial cross-sectional view of still another input terminal portion of an active matrix substrate used for a conventional LCD.

9 is an explanatory sectional view showing a defective state after cutting the substrate of FIG. 8;

[Explanation of symbols]

1 glass substrate, 2 insulating films, 3 input terminals, 4 short rings, 4a connection wiring, 5 insulating films, 14 gate wiring (signal lines), P cut section.

──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. ⁷ , DB name) G02F 1/1368 G09F 9/30

Claims (5)

(57) [Claims] 1. A switching element is formed in a matrix on a glass substrate, a plurality of signal lines for supplying signals to the switching element are provided vertically and horizontally, and ends of the plurality of signal lines are input terminals. Is connected to a short ring by a connection wiring via a connection line, and at least an insulating film is provided on an upper layer of the signal line. In order to remove the short ring part, a cut part is formed in a connection wiring between the short ring and the input terminal. An active matrix substrate comprising: a region where no insulating film is formed on the connection wiring over a range at least equal to or greater than the thickness of the glass substrate at the cut portion of the connection wiring. 2. An insulating film is provided between the glass substrate and at least a layer below the input terminal, and a cut portion of the connection wiring is formed in a layer below the connection wiring over a range of at least the thickness of the glass substrate. 2. The active matrix substrate according to claim 1, wherein a region where no insulating film is provided is formed. 3. The active matrix substrate according to claim 1, wherein the signal lines and the connection lines are made of a metal film, and the input terminals are made of a conductive oxide film. 4. A TFT substrate in which at least thin film transistors are provided in a matrix on a glass substrate and a plurality of signal lines for supplying signals to the thin film transistors are provided vertically and horizontally, and a counter substrate provided with at least a counter electrode. A liquid crystal display device in which a liquid crystal material is interposed therebetween, wherein an input terminal is provided at an end of a signal line of the TFT substrate, and a wiring is provided from the input terminal to an edge of the TFT substrate, and An insulating film is provided on at least the signal line and at least the TF
A liquid crystal display device in which a region where an insulating film is not provided is formed on the wiring at the edge of the T substrate. 5. A glass substrate in which a thin film transistor and a signal line are formed, and one end of the signal line is connected to a short ring by a connection wiring via an input terminal, and the other glass substrate provided with at least a counter electrode. A method for manufacturing a liquid crystal display device in which a glass substrate is cut after being attached to remove a short ring, wherein an insulating film is formed at least on an upper layer of the signal line, and a gap between the short ring and an input terminal is provided. An insulating film is not provided in an upper layer and a lower layer of the connection wiring at least in a region of the connection wiring having a thickness equal to or larger than the thickness of the glass substrate. A method for manufacturing a liquid crystal display device, comprising: