JP3238921B2 - Method for manufacturing semiconductor device - Google Patents
Method for manufacturing semiconductor deviceInfo
- Publication number
- JP3238921B2 JP3238921B2 JP2000007856A JP2000007856A JP3238921B2 JP 3238921 B2 JP3238921 B2 JP 3238921B2 JP 2000007856 A JP2000007856 A JP 2000007856A JP 2000007856 A JP2000007856 A JP 2000007856A JP 3238921 B2 JP3238921 B2 JP 3238921B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- region
- film
- substrate
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体装置等の製
造に用いるホトマスク、特に照明光の位相を変える処理
を施したホトマスクを用いた半導体装置の製造方法に関
する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photomask used for manufacturing a semiconductor device or the like, and more particularly to a method for manufacturing a semiconductor device using a photomask subjected to a process for changing the phase of illumination light.
【０００２】[0002]
【従来の技術】マスクパタンを転写する露光装置の解像
力を向上させる従来技術のひとつとして、マスク透過光
に位相を導入する方法がある。例えば特公昭６２−５０
８１１号公報では、不透明部をはさむ両側の光透過部の
少なくとも一方に位相を変える透明膜を形成している。
この方法によれば従来と同一のレンズで解像度を格段に
高めることができる。2. Description of the Related Art As one of conventional techniques for improving the resolution of an exposure apparatus for transferring a mask pattern, there is a method of introducing a phase into light transmitted through a mask. For example, Japanese Patent Publication 62-50
In JP-A-81111, a transparent film for changing the phase is formed on at least one of the light transmitting portions on both sides sandwiching the opaque portion.
According to this method, the resolution can be remarkably increased by using the same lens as the conventional one.
【０００３】また、特開昭６２−６７５４７号公報で
は、単一の光透過部の解像度向上手段として、上記単一
の光透過部の両側に透過光の位相を反転した解像限界以
下の光透過部を設けている。In Japanese Patent Application Laid-Open No. 62-67547, as a means for improving the resolution of a single light transmitting portion, a light having a resolution lower than the resolution limit where the phase of the transmitted light is inverted on both sides of the single light transmitting portion. A transmission section is provided.
【０００４】さらにまた、特開昭５３−５５７２号公報
には、回析歪が低レベルの安定なホトマスクとして、光
透過部と半透明部とに位相差を与えたホトマスクが提案
されている。Furthermore, Japanese Patent Application Laid-Open No. 53-5572 proposes a photomask having a phase difference between a light transmitting portion and a translucent portion as a stable photomask having a low level of diffraction distortion.
【０００５】[0005]
【発明が解決しようとする課題】上記従来技術において
は、通常の透過型マスクを作成した後、透過光の位相を
変えるための透明膜、いわゆる位相シフタを形成する必
要がある。さらに、上記位相シフタは隣合った透過部を
透過する光の位相が互いに反転するように配置する必要
がある。従って、複雑な素子パタンへの位相シフタの配
置では、シフタの配置が困難な場合等が発生し、効率よ
くシフタを配置するには、試行錯誤や高度な検討が必要
であり、多大な労力が必要であった。In the above prior art, it is necessary to form a transparent film for changing the phase of transmitted light, that is, a so-called phase shifter, after preparing a normal transmission type mask. Further, the phase shifters need to be arranged such that the phases of the light passing through the adjacent transmission sections are inverted from each other. Therefore, when arranging a phase shifter on a complex element pattern, it may be difficult to arrange the shifter. Trial and error and advanced study are required to efficiently arrange the shifter, and a great deal of labor is required. Was needed.
【０００６】また、マスクの製造工程も従来に比べ倍増
しており、工程増に伴う欠陥の発生や歩留まり低下が大
きな問題となっていた。また、透明膜の欠陥の修正も多
くの労力が必要であり、実用化の大きな障害になってい
た。Also, the number of mask manufacturing steps has been doubled as compared with the prior art, and the occurrence of defects and a decrease in yield accompanying the increase in the number of steps have been serious problems. In addition, the repair of the defect of the transparent film requires a lot of labor, which has been a major obstacle to practical use.
【０００７】本発明の第１の目的は、微細なパタンが形
成でき、解像不良の発生率を減少できるホトマスクを用
いた半導体装置の製造方法を提供することにある。A first object of the present invention is to provide a method of manufacturing a semiconductor device using a photomask capable of forming a fine pattern and reducing the rate of occurrence of poor resolution.
【０００８】[0008]
【０００９】[0009]
【００１０】[0010]
【００１１】[0011]
【課題を解決するための手段】本発明の半導体装置の製
造方法は、ガラス基板上に露光光に対して半透明な単一
の膜が形成されている第１領域と、前記第１領域内であ
って前記単一の膜が形成されていない第２領域と、位置
合わせマーク部又は検出窓パタンを形成する遮光領域と
を有し、前記第１領域の露光光の透過率は前記第２領域
の透過率を１００％としたとき、３０％以下であり、前
記第１領域の透過光と前記第２領域の透過光の位相が逆
相である第１の基板に前記露光光を透過させて、前記第
１の基板に形成されたパタンを第２の基板にレンズを通
して投影することによりパタンを形成する工程を有する
ものである。According to the present invention, there is provided a method of manufacturing a semiconductor device, comprising: a first region in which a single film that is translucent to exposure light is formed on a glass substrate; a second region which is not said single film is formed comprising a position
A light-shielding region for forming an alignment mark portion or a detection window pattern , wherein the transmittance of the exposure light of the first region is 30% or less when the transmittance of the second region is 100%. And transmitting the exposure light to a first substrate having a phase opposite to that of the light transmitted through the first region and the light transmitted through the second region, thereby allowing a pattern formed on the first substrate to pass through a second substrate. And forming a pattern by projecting through a lens onto the substrate.
【００１２】本発明の半導体装置の製造方法は、基板上
に感光性材料の薄膜を形成する工程、及び第１領域を透
過した第１の光と、前記第１領域の光の透過率を１００
％としたとき光透過率が３０％以下でありガラス基板上
に単一の膜を有する第２領域を透過した前記第１の光と
位相が逆相である第２の光とを、レンズを通して前記基
板上の薄膜に投影する工程、を有し、前記基板には、位
置合わせマーク部又は検出窓パタンを形成する遮光領域
が設けられているものである。A method of manufacturing a semiconductor device of the present invention includes a first light transmitted step of forming a thin film of photosensitive material on a substrate, and the first region, the transmittance of light of the first region 100
%, The second light having a phase opposite to that of the first light transmitted through the second region having a light transmittance of 30% or less and having a single film on the glass substrate is passed through a lens. have a process, to be projected on the thin film on the substrate, the substrate is position
Shielding area to form alignment mark or detection window pattern
It is shall be provided.
【００１３】また、本発明の半導体装置の製造方法は、
多層膜により形成される露光光に対して半透明な領域
と、前記半透明な領域内に設けられた透明な領域と、位
置合わせマーク部又は検出窓パタンを形成する遮光領域
とを有し、前記半透明な領域の露光光の透過率は前記透
明な領域の透過率を１００％としたとき、３０％以下で
あり、前記半透明な領域を透過した光と前記透明な領域
を透過した光の位相が互いに反転する第１の基板に前記
露光光を照射して、前記第１の基板に形成されたパタン
を第２の基板にレンズを通して投影することによりパタ
ンを形成する工程を有するものである。Further, a method of manufacturing a semiconductor device according to the present invention
A region that is translucent to exposure light formed by the multilayer film, a transparent region provided in the translucent region ,
Shielding area to form alignment mark or detection window pattern
Has the door, when said transmittance of the exposure light translucent region where the transmittance of the transparent area is 100%, 30% or less, light and a said transparent transmitted through the semi-transparent region wherein the first substrate the phase of light transmitted through the region are inverted to each other
Irradiating exposure light and projecting the pattern formed on the first substrate onto the second substrate through a lens to form a pattern.
【００１４】さらに、本発明の半導体装置の製造方法
は、基板上に感光性材料の薄膜を堆積する工程、及び第
１の領域と、前記第１の領域の光の透過率を１００％と
したとき光透過率が３０％以下であり多層膜が形成され
た第２の領域と、位置合わせマーク部又は検出窓パタン
を形成する遮光領域とを有し、前記第１の領域を透過し
た光と前記第２の領域を透過する光の位相が互いに反転
するホトマスクを透過した光をレンズを通して前記基板
上の薄膜に投影する工程、を有するものである。Further, in the method of manufacturing a semiconductor device according to the present invention, the step of depositing a thin film of a photosensitive material on a substrate , and the first region and the light transmittance of the first region are set to 100%. When the light transmittance is 30% or less and the second region where the multilayer film is formed is aligned with the alignment mark portion or the detection window pattern.
A light-shielding area for forming a light- transmitting area, and projecting light transmitted through a photomask in which the phases of the light transmitted through the first area and the light transmitted through the second area are opposite to each other to a thin film on the substrate through a lens. the step of, and has a.
【００１５】本発明において、半透明層とは、半透明な
膜の少なくとも一層を有するものであり、他にさらに透
明な膜を含む複合膜であってもよい。すなわち、この半
透明層全体として半透明であり、かつ透明な領域との間
に位相差を生じさせるものであればよい。In the present invention, the translucent layer has at least one translucent film, and may be a composite film further including a transparent film. That is, any material may be used as long as it is translucent as a whole and generates a phase difference between the translucent layer and the transparent region.
【００１６】半透明膜から通過した光は、光透過部を通
過した光に対して位相が反転しているため、その境界部
で位相が反転し、境界部での光強度が０に近づく。これ
により、相対的に光透過部を通過した光の強度と、パタ
ン境界部の光強度の比は大きくなり従来法に比べコント
ラストの高い光強度分布が得られる。Since the light passing through the translucent film is inverted in phase with respect to the light passing through the light transmitting portion, the phase is inverted at the boundary, and the light intensity at the boundary approaches zero. As a result, the ratio of the intensity of the light that has passed through the light transmitting portion and the intensity of the light at the pattern boundary becomes relatively large, and a light intensity distribution with a higher contrast than that of the conventional method can be obtained.
【００１７】これについて図面を用いて説明する。まず
従来法を図２を用いて説明する。図２（ａ）は従来法の
ホトマスクの断面図を示し、１はガラス基板、２は遮光
膜のＣｒ膜である。光透過部３を透過した光の振幅分布
は、図２（ｂ）に示すように同一符号である。この光を
レンズを通しウエハ上に投影すると、図２（ｃ）に示す
ように、遮光部直下まで光強度が広がった分布となる。
従って、従来法では微細なパタンを形成することが困難
であった。This will be described with reference to the drawings. First, the conventional method will be described with reference to FIG. FIG. 2A is a cross-sectional view of a conventional photomask, wherein 1 is a glass substrate, and 2 is a Cr film as a light shielding film. The amplitude distribution of the light transmitted through the light transmitting portion 3 has the same reference numeral as shown in FIG. When this light is projected on a wafer through a lens, the light intensity is distributed to a position immediately below the light shielding portion as shown in FIG. 2C.
Therefore, it has been difficult to form a fine pattern by the conventional method.
【００１８】これに対比して本発明を図１で説明する。
図１（ａ）は本発明のホトマスクの一例の断面図であ
る。１はガラス基板、４は半透明膜である。半透明膜４
の膜厚ｔは、 ｔ＝λ／ａ（ｎ−１） （ただし、λは露光光の波長、ｎは半透明膜の屈折率、
a は１．３≦ａ≦４の範囲の値である）の関係となるよ
うに調整する。このマスクを透過した光の振幅分布は、
図１（ｂ）に示すように光透過部３を通過した光が正の
符号であるのに対し、半透明膜４を通過した光の位相は
反転し負の符号となる。この光をレンズを通しウエハ上
に投影すると、図１（ｃ）に示すように、光透過部３と
半透明膜４の境界で位相反転しているため、その直下で
光強度はほぼ０となる。そのため光強度分布の広がりが
押さえられ、コントラストの高い微細なパタンを形成す
ることができる。The present invention will be described with reference to FIG.
FIG. 1A is a cross-sectional view of an example of the photomask of the present invention. 1 is a glass substrate and 4 is a translucent film. Translucent film 4
T = λ / a (n−1) (where λ is the wavelength of the exposure light, n is the refractive index of the translucent film,
a is a value in the range of 1.3 ≦ a ≦ 4). The amplitude distribution of the light transmitted through this mask is
As shown in FIG. 1B, while the light passing through the light transmitting portion 3 has a positive sign, the phase of the light passing through the translucent film 4 is inverted to have a negative sign. When this light is projected on the wafer through a lens, the phase is inverted at the boundary between the light transmitting part 3 and the translucent film 4 as shown in FIG. Become. Therefore, the spread of the light intensity distribution is suppressed, and a fine pattern with high contrast can be formed.
【００１９】[0019]
【発明の実施の形態】以下、本発明の実施の形態を説明
する。Embodiments of the present invention will be described below.
【００２０】（実施の形態１）本発明の第１の実施の形
態のホトマスクとして図１で示す構造のものを製造し
た。図１（ａ）はホトマスクの断面図を示す。１はガラ
ス基板、４は半透明膜である。半透明膜４の膜厚は、 ｔ＝λ／ａ（ｎ−１） （ただし、λは露光光の波長、ｎは半透明膜の屈折率、
a は１．３≦ａ≦４の範囲の値である）の関係となるよ
うに調整した。露光波長は水銀ランプのｉ線（３６５ｎ
ｍ）を用いた。ここで半透明膜４には塗布ガラスに吸光
剤を添加したものを用いた。このガラスの露光光に対す
る屈折率は約１．４５であったので、塗布ガラスの膜厚
は約４２０ｎｍとした。また、この時露光光の透過率が
１５％となるよう吸光剤の添加量を調整した。なお、上
記透過率の設定は、使用するレジストの感度、感光特性
を考慮し、決定する必要があり、１５％に限らないが本
発明の効果を得るには１％以上が望ましい。さらに、透
過率の上限は実用的なプロセスのばらつき等を考慮する
と５０％程度が望ましいが、これ以上でも効果は得られ
る。より効果的なのは５から３０％の範囲である。透明
な領域のパタンは、単一なホール、ドット、スペース又
はラインのパタンをそれぞれ形成した。(Embodiment 1) A photomask having the structure shown in FIG. 1 was manufactured as a first embodiment of the present invention. FIG. 1A is a sectional view of a photomask. 1 is a glass substrate and 4 is a translucent film. The thickness of the translucent film 4 is t = λ / a (n−1) (where λ is the wavelength of the exposure light, n is the refractive index of the translucent film,
a is a value in the range of 1.3 ≦ a ≦ 4). The exposure wavelength is i-line (365n) of a mercury lamp.
m) was used. Here, the translucent film 4 was formed by adding a light absorbing agent to coated glass. Since the refractive index of the glass to exposure light was about 1.45, the thickness of the applied glass was about 420 nm. At this time, the addition amount of the light absorbing agent was adjusted so that the transmittance of the exposure light became 15%. The setting of the transmittance needs to be determined in consideration of the sensitivity and the photosensitive characteristics of the resist used, and is not limited to 15%, but is preferably 1% or more in order to obtain the effect of the present invention. Further, the upper limit of the transmittance is desirably about 50% in consideration of the practical process variation and the like, but the effect can be obtained with more than this value. More effective is in the range of 5 to 30%. The transparent area pattern formed a single hole, dot, space or line pattern, respectively.
【００２１】また、本発明の効果を得るには半透明膜の
膜厚ｔは、 ｔ＝λ／ａ（ｎ−１） におけるａが１．３≦ａ≦４の範囲が望ましいが、この
範囲以外でも僅かながらコントラスト向上効果は得られ
る。また、半透明膜４の材料は塗布ガラスに限らず、有
機膜、無機膜等、所望の透過率が得られ、かつ透過した
光の位相が光透過部３を透過した光の位相に対しほぼ反
転できれば、如何なる材料でも適用可能である。また、
マスクの構造は上記実施の形態では半透明膜４を単一の
膜で構成したが、これに限らない。In order to obtain the effect of the present invention, the thickness t of the translucent film is desirably in the range of 1.3 ≦ a ≦ 4 where t = λ / a (n−1). Other than the above, a slight contrast improvement effect can be obtained. Further, the material of the translucent film 4 is not limited to coated glass, and a desired transmittance can be obtained, such as an organic film or an inorganic film, and the phase of the transmitted light is substantially equal to the phase of the light transmitted through the light transmitting portion 3. Any material that can be inverted can be used. Also,
In the above embodiment, the structure of the mask is such that the translucent film 4 is formed of a single film, but is not limited to this.
【００２２】このホトマスクを用いることにより、透過
光の光強度は、図１（ｃ）に示すように、光透過部３と
半透明膜４の境界の直下で光強度はほぼ０となり、その
ため光強度分布の広がりを押さえられ、コントラストの
高い微細なパタンが形成できた。By using this photomask, the light intensity of the transmitted light becomes almost 0 immediately below the boundary between the light transmitting portion 3 and the translucent film 4, as shown in FIG. 1 (c). The spread of the intensity distribution was suppressed, and a fine pattern with high contrast was formed.
【００２３】（実施の形態２）第２の実施の形態は、図
３に示すように半透明層の構成を多層膜とした。ガラス
基板１上に薄いＣｒ膜６と塗布ガラス膜７を被着し、所
望のパタン部を除去した。この場合は、薄いＣｒ膜６で
透過率を１％に調整し、塗布ガラス７で透過部との位相
差を調整した。薄いＣｒ膜６の露光光に対する透過率は
１から５０％の範囲であればよい。塗布ガラス膜７の膜
厚は上記第１の実施の形態で示した半透明膜４の膜厚制
限とほぼ同じでもよいが、さらに高精度に１８０°の位
相差を設定するため、薄いＣｒ膜６を透過する光の位相
ずれも考慮した。即ち、この実施の形態では半透明層は
薄いＣｒ膜６と塗布ガラス膜７とよりなり、薄いＣｒ膜
６の厚みは透過率を１％となるように定め、塗布ガラス
膜７の厚みを(Embodiment 2) In the second embodiment, the configuration of the translucent layer is a multilayer film as shown in FIG. A thin Cr film 6 and a coated glass film 7 were deposited on the glass substrate 1, and a desired pattern portion was removed. In this case, the transmittance was adjusted to 1% with the thin Cr film 6 and the phase difference with the transmission portion was adjusted with the coated glass 7. The transmittance of the thin Cr film 6 to exposure light may be in the range of 1 to 50%. The thickness of the coating glass film 7 may be substantially the same as the thickness limitation of the translucent film 4 shown in the first embodiment, but a thin Cr film is used in order to set the phase difference of 180 ° with higher accuracy. The phase shift of the light passing through No. 6 was also considered. That is, in this embodiment, the translucent layer is composed of the thin Cr film 6 and the coated glass film 7, the thickness of the thin Cr film 6 is determined so that the transmittance is 1%, and the thickness of the coated glass film 7 is reduced.
【００２４】[0024]
【数１】 (Equation 1)
【００２５】（ただし、ｄi 及びｎi は半透明層を構成
するｉ番目の膜の厚さ及び屈折率、ｍは半透明層を構成
する膜の数でこの実施の形態では２、λは露光光の波
長、φは１／４≦φ≦３／４の範囲の値である）の関係
を満たすようにした。この構造でも実施の形態１と同じ
効果が得られた。(Where d i and n i are the thickness and refractive index of the i-th film constituting the translucent layer, m is the number of the films constituting the translucent layer, 2 in this embodiment, and λ is The wavelength of exposure light, φ is a value in the range of 1/4 ≦ φ ≦ 3/4). With this structure, the same effect as in the first embodiment was obtained.
【００２６】（実施の形態３）第３の実施の形態では、
図４に示すように、ガラス基板１上に、薄いＣｒ膜６を
形成し、この薄いＣｒ膜６を所望のパタンに除去し、し
かる後ガラス基板１を所望の深さにエッチングした。薄
いＣｒ膜６の膜厚は４０ｎｍ以下とし、露光光に対する
透過率を第１の実施の形態で示したように１から５０％
の範囲に調整することが好ましい。この実施の形態では
１％とした。エッチング深さは、上記第２の実施の形態
で示した塗布ガラス膜７の膜厚制限と同じく、高精度に
１８０°の位相差を設定するために、薄いＣｒ膜６を透
過する光の位相ずれを考慮して定めた。(Embodiment 3) In the third embodiment,
As shown in FIG. 4, a thin Cr film 6 was formed on the glass substrate 1, the thin Cr film 6 was removed in a desired pattern, and then the glass substrate 1 was etched to a desired depth. The thin Cr film 6 has a thickness of 40 nm or less, and has a transmittance for exposure light of 1 to 50% as described in the first embodiment.
It is preferable to adjust the range. In this embodiment, it is 1%. The etching depth is the same as the film thickness limitation of the coating glass film 7 shown in the second embodiment, in order to set the phase difference of 180 ° with high accuracy, the phase of light transmitted through the thin Cr film 6 is adjusted. It was determined in consideration of the deviation.
【００２７】また、ガラス基板１のエッチング深さの制
御が困難な場合には、図５に示すような構造にすれば良
い。ガラス基板１上に、ＩＴＯからなる透明なエッチン
グストッパ８を設け、その上に透明膜９、その上に薄い
Ｃｒ膜６を設けてある。図４及び図５の構造でも実施の
形態１と同じ効果が得られた。When it is difficult to control the etching depth of the glass substrate 1, a structure as shown in FIG. 5 may be used. A transparent etching stopper 8 made of ITO is provided on a glass substrate 1, a transparent film 9 is provided thereon, and a thin Cr film 6 is provided thereon. The same effects as in the first embodiment were obtained with the structures of FIGS.
【００２８】（実施の形態４）第４の実施の形態は、第
１の実施の形態の加工上の問題点を対策した構造であ
る。図１の半透明膜４は塗布ガラスを用いたが、この材
料とガラス基板１はほぼ同じ材質であり、半透明膜４を
フッ化水素酸系の溶液等でエッチングする場合や、ＣＦ
4 系のガス等を用いたドライエッチングで加工する場
合、十分な選択性がとれない。従って、高度なエッチン
グ制御が必要となる。これに対し、本実施の形態は、図
６に示すように、ガラス基板１と半透明膜４の間にエッ
チングストッパ８を配置した。ここでは、シリコン窒化
膜を用いたがこれに限らない。(Embodiment 4) The fourth embodiment has a structure in which the problems in processing of the first embodiment are solved. Although the translucent film 4 in FIG. 1 uses coated glass, this material and the glass substrate 1 are almost the same, and the translucent film 4 is etched with a hydrofluoric acid-based solution or the like.
In the case of processing by dry etching using a four- system gas or the like, sufficient selectivity cannot be obtained. Therefore, advanced etching control is required. On the other hand, in the present embodiment, as shown in FIG. 6, an etching stopper 8 is arranged between the glass substrate 1 and the translucent film 4. Here, a silicon nitride film is used, but the present invention is not limited to this.
【００２９】また、ガラス基板上に導電材料がない場合
は、電子線でのパタン形成でチャージアップ現象が発生
し、パタンの位置ずれ等の問題が生じるので、エッチン
グストッパ８をＩＴＯ膜等の導電膜とすることも有効で
ある。その他の方法でチャージアップを防止する場合
は、導電膜を用いる必要はない。半透明膜４の膜厚につ
いては前記と同様にした。If there is no conductive material on the glass substrate, a charge-up phenomenon occurs due to the formation of a pattern by an electron beam, which causes a problem such as a displacement of the pattern. It is also effective to form a film. When charge-up is prevented by other methods, it is not necessary to use a conductive film. The thickness of the translucent film 4 was the same as described above.
【００３０】以上のように本発明のマスク構造は、光透
過部と半透明部を通過する光の位相が反転するように調
整されていることが必要である。また、通常のマスク又
は従来の位相シフト型マスクと同一基板内に本発明の構
造を組合せることも有効である。即ち、露光装置とマス
クの位置を整合するために用いる合わせマーク部やマス
クとウエハの位置を整合するため用いる検出窓パタンを
通常の遮光膜で形成したところ、検出信号は半透明膜を
用いたときよりも高いＳＮ比が得られた。As described above, the mask structure of the present invention needs to be adjusted so that the phase of light passing through the light transmitting portion and the translucent portion is inverted. It is also effective to combine the structure of the present invention in the same substrate as a normal mask or a conventional phase shift mask. Use words, when the detection Madopa Tan used for aligning the position of the mark portion and the mask and wafer suit used to align the position of the exposure apparatus and the mask formed by a conventional light-shielding film, the detection signal is a translucent film Higher S / N ratio was obtained.
【００３１】また、本発明の効果はホールパタンの形成
に有効であり、従来０．５μｍ径のホールパタンの形成
が限界だった光学系で０．４μｍ径のホールパタンが形
成できた。さらに、焦点位置ずれによる解像度劣化も小
さいことも確認できた。The effect of the present invention is effective for forming a hole pattern. A hole pattern having a diameter of 0.4 μm can be formed in an optical system in which the formation of a hole pattern having a diameter of 0.5 μm was conventionally limited. Furthermore, it was also confirmed that the resolution degradation due to the focal position shift was small.
【００３２】また、上記各実施の形態で示した本発明の
ホトマスクを半導体素子の電極配線導通孔の形成に用い
たところ、今までより０．１μｍ小さい導通孔が形成で
きた。さらに焦点深度の向上に伴い、解像不良の発生率
も大幅に改善できた。Further, when the photomask of the present invention shown in each of the above embodiments was used for forming the electrode wiring conductive hole of the semiconductor element, a conductive hole smaller by 0.1 μm than before could be formed. Further, with the improvement in the depth of focus, the occurrence rate of the resolution failure was also significantly improved.
【００３３】また、言うまでもないが、本発明の効果は
露光波長によらない。上記実施の形態では露光波長にｉ
線（３６５ｎｍ）を用いた例を示したが、この波長に限
らない。ｇ線（４３６ｎｍ）、ＫｒＦエキシマレーザ
光、ＡｒＦエキシマレーザ光等でも同様の結果が得られ
た。Needless to say, the effect of the present invention does not depend on the exposure wavelength. In the above embodiment, the exposure wavelength is i
Although the example using the line (365 nm) is shown, the wavelength is not limited to this. Similar results were obtained with g-line (436 nm), KrF excimer laser light, ArF excimer laser light, and the like.
【００３４】[0034]
【発明の効果】本発明によれば、従来の透過型マスクに
比べて微細なパタンが形成できた。またホトマスクの作
成工程も従来の透過型マスクとほぼ同じであり、従来の
位相シフトマスクに比べて大幅に工程の簡略化が計れ
た。According to the present invention, a finer pattern can be formed as compared with a conventional transmission mask. Also, the manufacturing process of the photomask is almost the same as that of the conventional transmission type mask, and the process is greatly simplified as compared with the conventional phase shift mask.
【００３５】また、本発明のホトマスクを用いて半導体
素子を作成した結果、従来型のホトマスクに比べパタン
の微細化が実現でき、素子面積の縮小化が実現できた。
さらに焦点深度の向上に伴い、解像不良の発生も大幅に
改善できた。Further, as a result of fabricating a semiconductor device using the photomask of the present invention, the pattern can be made finer and the device area can be reduced as compared with the conventional photomask.
Further, with the increase in the depth of focus, the occurrence of poor resolution was also significantly improved.
【図１】（ａ），（ｂ），（ｃ）はそれぞれ本発明の一
実施の形態のホトマスクの断面図、透過光の振幅分布図
及び光強度図である。FIGS. 1A, 1B, and 1C are a cross-sectional view, a transmission light amplitude distribution diagram, and a light intensity diagram of a photomask according to an embodiment of the present invention, respectively.
【図２】（ａ），（ｂ），（ｃ）はそれぞれ従来のホト
マスクの断面図、透過光の振幅分布図及び光強度図であ
る。FIGS. 2A, 2B, and 2C are a cross-sectional view of a conventional photomask, an amplitude distribution diagram of transmitted light, and a light intensity diagram, respectively.
【図３】本発明の他の実施の形態の断面図である。FIG. 3 is a cross-sectional view of another embodiment of the present invention.
【図４】本発明の他の実施の形態の断面図である。FIG. 4 is a cross-sectional view of another embodiment of the present invention.
【図５】本発明の他の実施の形態の断面図である。FIG. 5 is a cross-sectional view of another embodiment of the present invention.
【図６】本発明の他の実施の形態の断面図である。FIG. 6 is a cross-sectional view of another embodiment of the present invention.
１ ガラス基板 ２ Ｃｒ膜 ３ 光透過部 ４ 半透明膜 ６ 薄いＣｒ膜 ７ 塗布ガラス膜 ８ エッチングストッパ ９ 透明膜 DESCRIPTION OF SYMBOLS 1 Glass substrate 2 Cr film 3 Light transmission part 4 Translucent film 6 Thin Cr film 7 Coated glass film 8 Etching stopper 9 Transparent film
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) G03F 1/00 - 1/16 ──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. 7 , DB name) G03F 1/00-1/16
Claims (8)
単一の膜が形成されている第１領域と、前記第１領域内
であって前記単一の膜が形成されていない第２領域と、
位置合わせマーク部又は検出窓パタンを形成する遮光領
域とを有し、前記第１領域の露光光の透過率は前記第２
領域の透過率を１００％としたとき、３０％以下であ
り、前記第１領域の透過光と前記第２領域の透過光の位
相が逆相である第１の基板に前記露光光を透過させて、
前記第１の基板に形成されたパタンを第２の基板にレン
ズを通して投影することによりパタンを形成する工程を
有することを特徴とする半導体装置の製造方法。1. A first region in which a single film that is translucent to exposure light is formed on a glass substrate, and a first region in the first region where the single film is not formed. Two areas ,
Shielding area to form alignment mark or detection window pattern
And the transmittance of the exposure light in the first region is the second region.
Assuming that the transmittance of the region is 100%, the exposure light is transmitted through the first substrate, which is 30% or less, and the transmitted light of the first region and the transmitted light of the second region have opposite phases. hand,
A method for manufacturing a semiconductor device, comprising: forming a pattern by projecting a pattern formed on the first substrate onto a second substrate through a lens.
とを特徴とする請求項１記載の半導体装置の製造方法。2. The method according to claim 1, wherein the exposure light is excimer laser light.
程、及び第１領域を透過した第１の光と、前記第１領域
の光の透過率を１００％としたとき光透過率が３０％以
下でありガラス基板上に単一の膜を有する第２領域を透
過した前記第１の光と位相が逆相である第２の光とを、
レンズを通して前記基板上の薄膜に投影する工程、 を有し、前記基板には、位置合わせマーク部又は検出窓
パタンを形成する遮光領域が設けられていることを特徴
とする半導体装置の製造方法。3. A step of forming a thin film of a photosensitive material on a substrate, wherein the first light transmitted through the first region and the light transmittance when the transmittance of the light in the first region is 100%. 30% or less, the first light transmitted through the second region having a single film on the glass substrate and the second light having a phase opposite to the first light,
A step of projecting the thin film on the substrate through a lens, have a, in the substrate, the alignment mark portion or the detection window
The method of manufacturing a semiconductor device shielding region characterized that you have provided to form a pattern.
半透明な領域と、前記半透明な領域内に設けられた透明
な領域と、位置合わせマーク部又は検出窓パタンを形成
する遮光領域とを有し、前記半透明な領域の露光光の透
過率は前記透明な領域の透過率を１００％としたとき、
３０％以下であり、前記半透明な領域を透過した光と前
記透明な領域を透過した光の位相が互いに反転する第１
の基板に前記露光光を照射して、前記第１の基板に形成
されたパタンを第２の基板にレンズを通して投影するこ
とによりパタンを形成する工程を有することを特徴とす
る半導体装置の製造方法。4. A region which is translucent to exposure light formed by the multilayer film, a transparent region provided in the translucent region, an alignment mark portion or a detection window pattern.
And the transmittance of the exposure light in the translucent area is 100% when the transmittance of the transparent area is 100%.
30% or less, wherein the phase of the light transmitted through the translucent area and the phase of the light transmitted through the transparent area are inverted with respect to each other.
Forming a pattern by irradiating the substrate with the exposure light and projecting a pattern formed on the first substrate through a lens onto a second substrate to form a pattern. .
ことを特徴とする請求項４記載の半導体装置の製造方
法。5. The method according to claim 4, wherein the exposure light is excimer laser light.
を特徴とする請求項４または５に記載の半導体装置の製
造方法。6. The method according to claim 4, wherein the multilayer film is a film having two layers.
む膜であることを特徴とする請求項４ないし６のいずれ
か１つに記載の半導体装置の製造方法。7. A method for producing the multilayer film semiconductor device according to any one of claims 4 to 6, characterized in that a membrane comprising at least one layer of transparent film.
程、及び第１の領域と、前記第１の領域の光の透過率を
１００％としたとき光透過率が３０％以下であり多層膜
が形成された第２の領域と、位置合わせマーク部又は検
出窓パタンを形成する遮光領域とを有し、前記第１の領
域を透過した光と前記第２の領域を透過する光の位相が
互いに反転するホトマスクを透過した光をレンズを通し
て前記基板上の薄膜に投影する工程、 を有することを特徴とする半導体装置の製造方法。8. A step of depositing a thin film of a photosensitive material on a substrate, wherein the first region and the first region have a light transmittance of 30% or less when the light transmittance of the first region is 100%. The second region where the multilayer film is formed is aligned with the alignment mark portion or the inspection region.
A light-shielding region for forming a bay window pattern , wherein light transmitted through a photomask in which light transmitted through the first region and light transmitted through the second region are inverted in phase from each other is passed through a lens to form a thin film on the substrate. A method of manufacturing a semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000007856A JP3238921B2 (en) | 1990-09-28 | 2000-01-17 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000007856A JP3238921B2 (en) | 1990-09-28 | 2000-01-17 | Method for manufacturing semiconductor device |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25698390A Division JP3105234B2 (en) | 1990-09-28 | 1990-09-28 | Method for manufacturing semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000147745A JP2000147745A (en) | 2000-05-26 |
| JP3238921B2 true JP3238921B2 (en) | 2001-12-17 |
Family
ID=18536215
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000007856A Expired - Lifetime JP3238921B2 (en) | 1990-09-28 | 2000-01-17 | Method for manufacturing semiconductor device |
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| Country | Link |
|---|---|
| JP (1) | JP3238921B2 (en) |
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2000
- 2000-01-17 JP JP2000007856A patent/JP3238921B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP2000147745A (en) | 2000-05-26 |
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