JP3232853B2 - Dielectric mask for laser processing and method of manufacturing the same - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a laser processing mask, and more particularly to a dielectric mask having good pattern accuracy and high laser resistance, and a method of manufacturing the same.

[0002]

2. Description of the Related Art There is a processing method for removing glass, metal, organic matter, and the like by using a laser having a high photon energy such as an excimer laser. Recently, there has been an increasing movement to apply this method to the removal of organic insulating materials from circuit boards. For this purpose, a mask transfer method that requires a short process is promising. In the mask transfer method, a mask in which a portion that transmits and blocks a laser beam is patterned is placed opposite to a workpiece with a projection lens interposed therebetween, and the pattern of the portion that transmits the laser beam is placed on the workpiece. This is a method of transferring and processing the material surface.

As a mask used in the mask transfer method, a metal mask of Cr or the like, or a mask in which an Al thin film is formed on a glass substrate surface has been conventionally used. The Cr mask absorbs several tens percent of excimer laser light. Therefore, the temperature rises during use and the material is melted, which is not practical. Also, the Al thin film is considered to be a good mask material because it reflects excimer laser light by 90% or more, but the surface is easily damaged and the laser resistance is rapidly deteriorated.

On the other hand, as disclosed in Japanese Patent Application Laid-Open No. 2-25289, there is a dielectric mask in which a dielectric multilayer film is laminated on a glass substrate surface to form a pattern. This is an interference filter that reflects laser light by alternately laminating a high-refractive-index dielectric film and a low-refractive-index dielectric film with a thickness whose optical film thickness is ４ of the laser wavelength. And is very effective as a mask for laser processing. The dielectric material is limited to a material having a transmissive property in the wavelength range of an excimer laser, and is generally a fluoride (LiF, NaF, MgF).
₂ ) and oxides (SiO ₂ , Al ₂ O ₃ , HfO _{2, etc.} ) are used, but these are not easily processed materials. The number of layers of the dielectric multilayer film varies depending on the combination of the high refractive index material and the low refractive index material and the required reflectance.
If the thickness is 5 μm or more, the thickness is about 3 μm.

Generally, there is an ion milling method as a pattern forming method for such difficult-to-process materials. In the ion milling method, a resist having a desired pattern is formed on the surface of a dielectric multilayer film, and the lower dielectric multilayer film is removed through an opening of the resist by irradiating an accelerated ion shower, and a dielectric having a desired pattern is formed. Obtain a body mask. According to this method, a fine pattern can be formed, but there is a problem that large-area processing is difficult due to the generally expensive ion milling apparatus and restrictions on the diameter of the ion source.

As another pattern forming method, there is a lift-off method. In the lift-off method, first, a lift-off layer having a pattern opposite to a desired pattern is formed on the substrate surface, and then a dielectric multilayer film is formed thereon, and then the lift-off layer is formed on the dielectric material formed thereon. This is a method of obtaining a dielectric mask having a desired pattern by removing by wet etching together with the multilayer film.

A general lift-off method is disclosed in Japanese Patent Laid-Open No. 1-118.
As shown at 134, a photosensitive organic material is used as a lift-off layer material.

[0008]

In a lift-off method of a general semiconductor process, a photoresist which is a photosensitive organic material is used as a lift-off layer. However, since a general photoresist is deformed or deteriorated by heat, a substrate temperature of 80 ° C.
In many cases, film formation is performed at about the same level. On the other hand, the formation of the dielectric multilayer film is performed by a vapor deposition method or the like.
Since the substrate needs to be heated to a high temperature (200 ° C. to 400 ° C.) during film formation, there is a problem that a commonly used photoresist cannot be used as a lift-off layer.

As a material that is stable even at high temperatures, a metal film, such as Al or Cr, can be used as the lift-off layer. However, in the lift-off process, it is necessary to form a lift-off layer having a thickness of about 1.5 times or more the total thickness of the required dielectric multilayer film. When the film is formed in such a manner, the stress of the formed film increases, and problems such as warpage of the substrate, cracking of the formed film, and peeling of the film from the substrate are likely to occur.

[0010] Further, there is a limited method of forming a pattern on an Al film, a Cr film, or the like having a thickness of several μm. First, it is easy to form a metal film on a substrate, apply a photoresist on it, form a pattern by exposure and development, and form a pattern on the metal film by wet etching only the metal film at the opening of the resist. However, when a metal film having a thickness of several μm is wet-etched, the side etching amount also increases,
There is a problem that the pattern accuracy is deteriorated.

An object of the present invention is to solve the above-mentioned problems of the prior art and to provide a method of manufacturing a laser processing dielectric mask having high pattern accuracy by a lift-off method, and a laser processing dielectric mask manufactured by this method. It is in providing.

[0012]

In order to solve the above problems, a manufacturing method using a polyimide material as a lift-off material has been devised.

First, a polyimide material is stable at a high temperature of 200 ° C. or more when a dielectric multilayer film is formed, and has a thickness of several μm.
In many cases, high-precision pattern processing can be easily performed by dry etching or the like. Lift-off can be easily achieved by using a polar solvent or an alkaline etching solution as the etching solution. As a result, a dielectric mask having good pattern accuracy and high laser resistance can be obtained very easily even for a thick dielectric multilayer film. Hereinafter, the production method of the present invention will be described in more detail.

The manufacturing method according to the present invention provides a method of
It can be divided into three by the formation method.

In the first method, a metal film is formed on the lift-off layer in a pattern, and using the mask as a mask, dry etching is performed with a reactive gas such as oxygen to form a pattern on the lift-off layer. How to Hereinafter, the method will be described with reference to FIG.

In FIG. 1, reference numeral 1 denotes a glass substrate that transmits the laser light used, 2 denotes a protective film, 3 denotes a lift-off layer, 4 denotes a metal film, 5 denotes a photoresist, and 6 denotes a dielectric multilayer film.

An optically polished quartz glass is used as a glass substrate 1, and (a) a metal film is formed on its surface to form a protective film 2
And This protective film is formed as necessary when the substrate 1 is damaged in a subsequent step. Next, (b) the lift-off layer 3 is formed using a polyimide material. Next, (c) a metal film 4 is formed on the surface. Next, a photoresist 5 is formed on the metal film 4 by coating and heating, and then (e) patterning is performed by exposing and developing. Next, (f) the substrate is immersed in an etching solution for the metal film 4 to etch the metal film 4 in the opening of the photoresist 5, and then the photoresist 5 is removed. Next, (g) the lift-off layer 3 at the opening of the metal film 4 is processed by dry etching using oxygen plasma. After this, (h) the metal film 4 on the lift-off layer 3 is removed again by immersion in the etchant for the metal film 4, and then the substrate is immersed in the etchant for the protective film 2 to protect the opening of the lift-off layer 3. Remove 2.

(I) SiO ₂ , Al ₂ O ₃ , H
Of several dielectric materials having different refractive indexes, such as fO ₂ , YF ₃ , MgF ₂ , LaF ₃ , and ThF ₄ , several to several tens of layers are alternately formed, and the total film thickness is 0.5 μm to 3 μm. Dielectric multilayer film 6
To form Finally, (j) the substrate is immersed in a liquid that erodes the lift-off layer 3, the dielectric multilayer film on the lift-off layer 3 is removed together with the lift-off layer 3, and the protective film 2 is further removed by etching to obtain a desired dielectric mask. Complete.

The second method is to form a resist having dry etching resistance, for example, an organosilicon-based resist on the lift-off layer in a pattern, and use this as a mask for dry etching using a gas such as oxygen. To form a pattern on the lift-off layer. This method will be described with reference to FIG.

In FIG. 2, reference numeral 1 denotes a glass substrate that transmits the laser light used, 3 denotes a lift-off layer, 5 denotes a photoresist having dry etching resistance, and 6 denotes a dielectric multilayer film.

Optically polished quartz glass is used as the glass substrate 1, and (a) a lift-off layer 3 is formed on the surface thereof using a polyimide material. Next, (b) a photoresist 5 having dry etching resistance is formed on the surface by coating and heating, and (c) patterning is performed by exposing and developing. Next, (d) the lift-off layer 3 at the opening of the resist 5 is processed by dry etching using oxygen plasma. Thereafter, the substrate is immersed in a stripping solution for the resist 5,
The resist 5 is peeled off. Next, (e) a dielectric multilayer film 6 is formed by alternately depositing the above-described two types of dielectric materials having different refractive indexes. Finally, (f) the substrate is lift-off layer 3
Is immersed in an eroding liquid, and the dielectric multilayer film thereon is removed together with the lift-off layer 3 to complete a desired dielectric mask.

The third method is a case where photosensitive polyimide is used for the lift-off layer, in which the lift-off layer itself is directly exposed and developed to form a pattern. This method will be described with reference to FIG.

In FIG. 3, reference numeral 1 denotes a glass substrate that transmits laser light to be used, 6 denotes a dielectric multilayer film, and 7 denotes a lift-off layer formed using photosensitive polyimide.

An optically polished quartz glass is used as the glass substrate 1, (a) a photosensitive polyimide is applied to the surface thereof to form a lift-off layer 7, and (b) the lift-off layer 7
To form the desired pattern. Next, (c) a dielectric multilayer film 6 is formed by alternately depositing the above-described two types of dielectric materials having different refractive indexes. Finally, (d) the substrate is immersed in a liquid that erodes the lift-off layer 7 and the dielectric multilayer film thereon is removed together with the lift-off layer 7 to complete a desired dielectric mask.

In the above-described first to third methods, as the polyimide-based material that can be used as the lift-off layer, an aromatic polyimide having excellent heat resistance is preferable. Examples include a material composed of a repeating unit represented by Chemical formula 5), but are not limited thereto.

General formula (Formula 5)

[0027]

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Here, R ² is represented by (a),
It is at least one kind of tetravalent organic group selected from (b) and (c). That is, if (a) of (Chemical Formula 6) is selected as R ² , (Chemical Formula 5) becomes (Chemical Formula 1), if (b) is selected, (Chemical Formula 2),
If (c) is selected, it is represented by (Formula 3). R ⁵ is at least one divalent organic group selected from the following (Chemical formula 7), including those represented by (Chemical formula 4).

[0029]

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[0030]

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[0031]

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[0032]

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[0033]

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[0034]

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[0035]

As described above, by using a polyimide-based material as the lift-off layer, a dielectric mask having good pattern accuracy and high laser resistance can be easily manufactured at low cost even for a thick dielectric multilayer film. The reason why it can be manufactured will be described below.

First, the polyimide-based material is stable at a high temperature of 200 ° C. or more during the formation of the dielectric multilayer film, and the pattern of the lift-off layer formed of the polyimide-based material is deformed during the formation of the dielectric multilayer film. Therefore, in the subsequent lift-off step, a highly accurate pattern can be transferred to the dielectric multilayer film.

In addition, since the polyimide-based material is stable at a high temperature and does not generate gas or the like, gas or the like as an impurity is not entrained in the film when forming the dielectric multilayer film. If a mask in which an impurity gas or the like is entangled in a dielectric multilayer film is used as a laser processing mask, the laser is absorbed by the impurity gas or the like in the film, and the temperature of that portion rises and melts. The surroundings are damaged by the influence of heat and cannot be used as a mask. However, when a polyimide-based material is used as the lift-off layer, as described above, the polyimide-based material is stable at a high temperature and does not generate a gas or the like. A dielectric mask with high laser resistance that does not cause damage to the mask when used as a processing mask can be obtained.

Next, the last step of lift-off, that is, a step of immersing the substrate in a liquid that erodes the lift-off layer and removing the dielectric multilayer film thereon together with the lift-off layer is performed efficiently in a short time, and furthermore, the defect is eliminated. In order to manufacture a dielectric mask without any defects, it is necessary to make the thickness of the lift-off layer larger than the thickness of the dielectric multilayer film. That is, since the dielectric multilayer film has a thickness of about 0.5 μm to 3 μm, it is necessary to form the lift-off layer to have a greater thickness.
When a conventional Al or the like is formed as a lift-off layer, 3 μm
As described above, forming Al or the like to a thickness of at least m increases the stress of the film, easily warps the substrate, and further causes problems such as easy formation of defects and cracks in the formed film. On the other hand, there is a method described below for forming a polyimide-based material as a lift-off layer, and a film having a thickness of 3 μm or more and having a sufficiently small internal stress such that there is no defect and the substrate does not warp is provided. It can be easily formed in a short time. As a result, a lift-off process can be performed, and a dielectric mask having no defect can be manufactured.

As a forming method, a method in which a polyimide sheet having an adhesive layer made of a thermoplastic heat-resistant material, or a method in which a prepreg, which is a sheet of a precursor of these polyimides, is laminated on a substrate and formed by heating,
There is a method of spin-coating using a varnish in which a polyamic acid, which is a precursor of polyimide, is dissolved in a polar solvent, and forming the polyimide by heating.

Next, in the pattern processing of the lift-off layer, when conventional Al or the like is used for the lift-off layer, Al pattern processing is generally performed by wet etching with an Al etching solution using a resist as a mask. Since the side etching occurs, especially in the lift-off layer having a thickness of 3 μm or more, the pattern dimension changes on the order of several μm from the design value, and high-precision pattern processing cannot be performed. From the viewpoint of high-precision pattern processing, a method of dry-etching an Al film or the like using a reactive gas can be considered. However, since the Al film or the like is hardly etched by a reactive gas such as oxygen or CF ₄ , there is a danger. High chlorine-based gas must be used. In contrast,
Since the polyimide-based material is easily processed by dry etching using a reactive gas such as oxygen or CF ₄ , highly accurate pattern processing with almost no side etching can be easily performed.

When a photosensitive polyimide material is used for the lift-off layer, the application of the photoresist and the dry etching step can be omitted, so that the steps can be shortened, and the patterning of the lift-off layer can be further performed. Become simple.

Finally, since the polyimide-based material is easily etched by a polar solvent or an alkaline etchant, lift-off can be easily performed by using a polar solvent or an alkaline etchant as an etchant used for lift-off. is there. As long as the etchant has an etching rate of 0.5 μm or more per hour with respect to the polyimide material, the effect of the present invention can be sufficiently obtained.

[0043]

The present invention will be described below with reference to examples.

Example 1 In this example, a dielectric mask was manufactured using a commercially available polyimide varnish. The manufacturing process of the dielectric mask will be described with reference to FIG. In FIG.
A glass substrate that transmits the light, 2 is a protective film, 3 is a polyimide, 4 is a metal film, 5 is a photoresist, and 6 is a dielectric multilayer film.

An optically polished quartz glass was used as the glass substrate 1, and (a) a protective film 2 was formed on the surface thereof by sputtering Cr to a thickness of 0.1 μm. Next, (b) PIQ (Hitachi Chemical Co., Ltd.) was formed as polyimide 3 to a thickness of 4 μm by a spin coating method, and then heated and cured at 200 ° C. for 30 minutes and at 350 ° C. for 30 minutes. (C) Further, a metal film 4 was formed on the surface by forming Al to a thickness of 0.1 μm by sputtering. Next, (d) a photoresist 5 is formed on the metal film 4.
(Novolak resin naphthoquinone-based positive resist)
It was applied by a spin coating method to a thickness of 1 μm, dried by heating at 90 ° C. for 30 minutes, (e) exposed and developed to form a desired pattern.

Next, (f) the substrate was immersed in an etching solution of Al to etch the metal film 4 in the opening of the photoresist 5, and then the photoresist 5 was removed with a resist stripping solution. Next, (g) the polyimide 3 in the opening of the metal film 4 was processed by dry etching using oxygen plasma. Thereafter, (h) the substrate was immersed again in an Al etchant to etch the metal film 4, and then the substrate was immersed in a Cr etchant to etch the Cr protective film 2 in the opening of the polyimide 3.

(I) A dielectric material S is formed on the surface by vapor deposition.
55 layers of iO ₂ and Al ₂ O ₃ are alternately formed to a total thickness of 2.2.
A μm dielectric multilayer film 6 was formed. Finally, (j) the substrate is immersed in a mixed solution of hydrazine hydrate and ethylenediamine (mixing ratio 7: 3) to remove the dielectric multilayer film 6 on the lift-off layer together with the polyimide 3 serving as the lift-off layer, and further to perform Cr etching. The Cr protective film 2 was removed by immersion in the liquid, and the dielectric mask was completed. Figure 4 shows the mask pattern
It can be seen that the pattern accuracy is extremely good.

If a gas or the like is involved as an impurity in the dielectric mask film formed by the above process,
During laser irradiation, the temperature of the mask surface may rise abnormally and damage the mask. Therefore, in order to confirm that no gas or the like is caught in the film of the mask, a laser irradiation experiment was performed using the formed dielectric mask.

An excimer laser is applied to this dielectric mask for 10 minutes.
After the irradiation with 0 times, the mask surface was observed to evaluate whether or not the mask was damaged. No damage was found on the mask even when the mask was irradiated with an excimer laser having an energy density of at least about 6 J / cm ² .

For comparison, dielectric SiO ₂ and Al ₂ O ₃ were alternately formed on the surface of the synthetic quartz substrate in the same manner as described above.
To form a dielectric multilayer film having a total thickness of 2.2 μm,
A dielectric mirror having no pattern was produced, and the dielectric mirror was similarly irradiated with laser to evaluate damage. As a result, similar to the dielectric mask of the present invention, no damage due to laser irradiation was observed. That is, it was found that by forming a mask pattern by the above process, the dielectric multilayer film was not affected by the laser resistance.

From the above, in the above-described mask forming process including the dielectric multilayer film, the incorporation of impurities such as gas into the film in such an amount as to affect the laser resistance is as follows.
It is presumed that they did not exist.

When the laser processing of the epoxy resin was actually performed using this dielectric mask, the mask pattern was accurately transferred to the epoxy resin. It has a characteristic of reflecting light.

Table 1 shows the structural formula of the polyimide for the lift-off layer used in the present invention, and the etching rate of each polyimide with respect to a mixed solution of hydrazine hydrate and ethylenediamine (mixing ratio 7: 3). .

[0054]

[Table 1]

The materials described in Table 1 have a sufficient etching rate for performing lift-off as shown in the following examples.

Embodiment 2 A manufacturing process of a dielectric mask of this embodiment will be described with reference to FIG.

Optically polished quartz glass was used as the glass substrate 1. (a) Polyimide No. 1 in Table 1 was formed on the surface of the glass substrate from a varnish of polyamic acid as a precursor by spin coating and heat curing, and lift-off was performed. Layer 3 was obtained.

Next, as (b) photoresist 5, R
U-1600P (Hitachi Chemical trademark, organosilicon-based positive resist) is applied at a thickness of 1 μm by a spin coating method,
After heating and drying at 30 ° C. for 30 minutes, (c) exposure and development were performed to form a desired pattern. Next, (d) the lift-off layer 3 at the opening of the photoresist 5 was processed by dry etching using oxygen plasma. Thereafter, the substrate is immersed in a resist stripping solution to remove the photoresist 5, whereby the lift-off layer 3 is completed. (E) 55 dielectric SiO ₂ and Al ₂ O ₃ layers were alternately formed on this surface by vapor deposition in the same manner as in Example 1 to form a dielectric multilayer film 6 having a total thickness of 2.2 μm. Thereafter, (f) the substrate is immersed in a mixed solution of hydrazine hydrate and ethylenediamine (mixing ratio 5: 5), and the dielectric multilayer film 6 on the lift-off layer 3 is removed together with the lift-off layer 3 to obtain a desired pattern. Was obtained.

An excimer laser is applied to this dielectric mask for 10 minutes.
Irradiation was performed 0 times, and the laser resistance was evaluated.
No damage was seen on the mask even when a laser beam of about J / cm ² was irradiated. Moreover, when the laser processing of the transparent conductive film on the glass substrate was actually performed using this dielectric mask, the mask pattern was accurately transferred to the transparent conductive film, and the dielectric mask manufactured by the present invention was practically sufficient. It was found that it had the property of reflecting laser light.

Examples 3 to 16 In place of No. 1 polyimide of Example 2, No. 2 of Table 1
A dielectric mask was manufactured in the same manner as in Example 2 except that Nos. To 15 were used.

The pattern accuracy of the completed dielectric mask was extremely good.

The dielectric mask was irradiated with excimer laser 100 times to evaluate the laser resistance. As a result, no damage was found to the mask even when irradiated with a laser of at least about 6 J / cm ² .

Although the dielectric mask was manufactured using the 15 types of polyimides shown in Table 1, the polyimide-based material is not limited to this, and another polyimide material may be used.

Embodiment 17 A manufacturing process of a dielectric mask according to Embodiment 17 of the present invention will be described with reference to FIG.
This will be described with reference to FIG. In FIG. 3, reference numeral 7 denotes a lift-off layer formed using photosensitive polyimide.

An optically polished quartz glass was used as the glass substrate 1, and (a) PL2035 (Hitachi Chemical Co., Ltd.) as a photosensitive polyimide 7 was applied to the surface thereof by spin coating.
After being formed to a thickness of 5 μm, it was dried by heating at 90 ° C. for 30 minutes. Next, (b) UV exposure was performed using a photomask having a desired pattern, development processing was performed, and then heat curing was performed at 200 ° C. for 30 minutes and at 400 ° C. for 30 minutes. (C) Dielectric SiO ₂ and HfO ₂ are alternately deposited on this surface by vapor deposition.
Layers were formed to form a dielectric multilayer film 6 having a total thickness of 1.0 μm. Finally, (d) the substrate is immersed in a mixed solution of hydrazine hydrate and ethylenediamine (6: 4), and the dielectric multilayer film 6 on the lift-off layer 7 is removed together with the lift-off layer 7 to obtain good pattern accuracy. A dielectric mask was obtained.

An excimer laser is applied to this dielectric mask for 10 minutes.
When the laser resistance was evaluated by irradiating 0 times, at least 2
No damage was seen on the mask even when a laser beam of about J / cm ² was irradiated. Also, when laser processing of the polyimide sheet was actually performed using this dielectric mask, the mask pattern was accurately transferred to the polyimide sheet,
It has been found that the dielectric mask manufactured according to the present invention has a characteristic of sufficiently reflecting laser light for practical use.

In this embodiment, a commercially available photosensitive polyimide is used. However, the present invention is not limited to this, and another polyimide material having photosensitivity may be used.

Comparative Example 1 For comparison with the present invention, a metal film (Al
Using the film as a lift-off layer, a dielectric mask was manufactured. The patterning of the Al lift-off layer was performed by forming a photoresist on the Al surface and forming a resist pattern, and then immersing the substrate in an Al etchant and performing wet etching. Otherwise, a dielectric mask was manufactured in the same manner as in Example 2. FIG. 5 shows the prepared dielectric mask pattern. The shape was largely distorted from the circular pattern due to side etching of the Al lift-off layer, and a pattern with high accuracy could not be obtained.

Comparative Example 2 For another comparison with the present invention, a dielectric mask was manufactured using a conventional photoresist as a lift-off layer. OFPR8600 (trademark of Tokyo Ohka) was used as a photoresist as a lift-off layer, and patterning was performed by ordinary exposure and development. Otherwise, a dielectric mask was manufactured in the same manner as in Example 2. As a result, an accurate pattern could not be obtained, and clouding was observed in the dielectric mask. This is presumably because the photoresist was melted during dielectric film formation. The dielectric mask was irradiated with an excimer laser 100 times and the damage was evaluated. As a result, it was found that even with a laser irradiation of about 0.2 J / cm ² , the mask surface was melted and could not be used as a laser processing mask.

The embodiments 1 to 17 have been described above in detail. In the above embodiment, as a method for forming the polyimide, the polyimide varnish was formed by spin coating and heat-curing.However, the present invention is not limited to this, and a polyimide sheet having an adhesive layer made of a thermoplastic heat-resistant material is used. Alternatively, a method may be used in which a prepreg, which is a sheet of a precursor of these polyimides, is laminated on a substrate and formed by heating.

Further, although a mixture of hydrazine hydrate and ethylenediamine was used as an etching solution for lifting off the lift-off layer, the present invention is not limited to this, and a material that dissolves or decomposes the material of the lift-off layer, for example, Polar organic solvents such as methyl ethyl ketone, N, N-dimethylacetamide, N, N-dimethylformamide, 1-methyl-2-pyrrolidone, dimethylsulfoxide, and tetramethylammonium hydroxide;
An alkaline solution such as hydrazine or hydrazine hydrate may be used.

In this embodiment, the protective film 2 and the metal film 4
Although sputtering is used as the film forming method, the method is not limited to this, and the film may be formed by a vapor deposition method, a CVD method, or the like. Further, dielectric SiO ₂ and Al ₂ O ₃ are formed by a vapor deposition method. However, the present invention is not limited to this, and may be formed by a sputtering method, a CVD method, or the like.

[0073]

According to the method of manufacturing a dielectric mask for laser processing according to the present invention, the pattern accuracy is high and the laser resistance is high even for various dielectric materials, especially for a thick dielectric multilayer film. A dielectric mask can be easily obtained at low cost.

[Brief description of the drawings]

FIG. 1 is a view showing one embodiment of a manufacturing process of a laser processing dielectric mask of the present invention.

FIG. 2 is a view showing one embodiment of a manufacturing process of the laser processing dielectric mask of the present invention.

FIG. 3 is a view showing one embodiment of a manufacturing process of the laser processing dielectric mask of the present invention.

FIG. 4 shows a dielectric mask pattern for laser processing manufactured according to the first embodiment of the present invention.

FIG. 5 is a laser processing dielectric mask pattern manufactured in Comparative Example 1.

[Description of Signs] 1 ... Glass substrate, 2 ... Protective film, 3 ... Lift-off layer, 4 ...
Metal film, 5 ... photoresist, 6 ... dielectric multilayer film, 7 ...
Lift-off layer formed using photosensitive polyimide.

──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. ⁷ Identification code FI H01L 21/027 H01L 21/30 502P 21/3065 21/302 K (72) Inventor Hideo Togawa 292 Yoshida-cho, Totsuka-ku, Yokohama-shi, Kanagawa Prefecture. (56) References JP-A-4-356388 (JP, A) JP-A-5-55749 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , (DB name) B23K 26/00-26/06 G03F 1/00 G03F 7/027-7/038 G03F 7/26 H01L 21/027 H01L 21/3065

Claims (9)

(57) [Claims] A lift-off layer forming step of forming a lift-off pattern using a polyimide-based material on a substrate that transmits desired laser light; and a dielectric multilayer on the substrate on which the lift-off pattern is formed. Forming a dielectric multilayer film for forming a film, and removing the lift-off pattern and the dielectric multilayer film formed on the lift-off pattern from the substrate. A method of manufacturing a dielectric mask for laser processing. 2. A dielectric mask for laser processing according to claim 1, wherein a material having a wet etching rate of 0.5 μm or more per hour by a polar solvent or an alkaline etching solution is used as said polyimide-based material. Manufacturing method. 3. The method for manufacturing a dielectric mask for laser processing according to claim 1, wherein the polyimide-based material contains a repeating unit represented by the following general formula (Formula 1). General formula (Formula 1) (Where R ¹ is a divalent organic group having an aromatic ring) 4. The method for producing a dielectric mask for laser processing according to claim 1, wherein the polyimide-based material contains a repeating unit represented by the following general formula (Formula 2). General formula (Chemical formula 2) (Where R ¹ is a divalent organic group having an aromatic ring) 5. The method for manufacturing a dielectric mask for laser processing according to claim 1, wherein the polyimide-based material contains a repeating unit represented by the following general formula (Formula 3). General formula (Chemical formula 3) (Where R ¹ is a divalent organic group having an aromatic ring) 6. The method for manufacturing a dielectric mask for laser processing according to claim 1, wherein the polyimide-based material contains a repeating unit represented by the following general formula (Formula 4). General formula (Formula 4) (Where R ² is a tetravalent organic group, and R ³ and R ⁴ are a bond or a divalent organic group) 7. The method for manufacturing a dielectric mask for laser processing according to claim 1, wherein said polyimide-based material is photosensitive polyimide. 8. The method for manufacturing a dielectric mask for laser processing according to claim 2, wherein a mixture of hydrazine hydrate and ethylenediamine is used as said etching solution. 9. A laser processing dielectric mask manufactured by the manufacturing method according to claim 1.