JP3232700B2 - Method for producing high-purity terephthalic acid - Google Patents

Method for producing high-purity terephthalic acid

Info

Publication number
JP3232700B2
JP3232700B2 JP27457192A JP27457192A JP3232700B2 JP 3232700 B2 JP3232700 B2 JP 3232700B2 JP 27457192 A JP27457192 A JP 27457192A JP 27457192 A JP27457192 A JP 27457192A JP 3232700 B2 JP3232700 B2 JP 3232700B2
Authority
JP
Japan
Prior art keywords
terephthalic acid
aqueous solution
reactor
crude terephthalic
producing high
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP27457192A
Other languages
Japanese (ja)
Other versions
JPH06128191A (en
Inventor
岳彦 馬場
芳雄 石永
勝彦 福井
啓訓 仰木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Chemical Corp
Original Assignee
Mitsubishi Chemical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Chemical Corp filed Critical Mitsubishi Chemical Corp
Priority to JP27457192A priority Critical patent/JP3232700B2/en
Priority to DE4334100A priority patent/DE4334100C2/en
Priority to TW082108289A priority patent/TW225520B/zh
Priority to GB9320992A priority patent/GB2271568B/en
Priority to KR1019930021132A priority patent/KR100267897B1/en
Priority to US08/134,907 priority patent/US5420344A/en
Priority to CN93119113.0A priority patent/CN1035763C/en
Publication of JPH06128191A publication Critical patent/JPH06128191A/en
Application granted granted Critical
Publication of JP3232700B2 publication Critical patent/JP3232700B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は高純度テレフタル酸の製
造方法に関するものである。詳しくは、水溶液中の微量
不溶物を効率よく溶解させて精製処理することができる
工業的に有利な高純度テレフタル酸の製造方法に関する
ものである。
The present invention relates to a method for producing high-purity terephthalic acid. More specifically, the present invention relates to an industrially advantageous method for producing high-purity terephthalic acid, which is capable of efficiently dissolving and purifying a trace amount of insolubles in an aqueous solution and purifying it.

【0002】[0002]

【従来の技術】パラキシレンの液相酸化反応により得ら
れたテレフタル酸を更に高純度化するため、粗テレフタ
ル酸結晶を高温、高圧下で水中に溶解し、このテレフタ
ル酸の水溶液を、例えば、パラジウム/カーボン等の白
金族金属触媒の存在下、水素により処理する精製法は公
知である(特公昭41−16860号等)。この精製法
を工業的に実施する場合には、通常、予め、チューブ型
加熱器により、粗テレフタル酸結晶を所定割合の水に高
圧下、例えば260℃以上の高温下で溶解処理するが、
テレフタル酸の溶解速度の関係から、粗テレフタル酸の
結晶粒子径によっては、溶解が不十分の場合が有り得
る。もし、未溶解のテレフタル酸結晶が白金族金属触媒
の充填層に流れた場合には、安定した連続運転が不可能
になる。
2. Description of the Related Art In order to further purify terephthalic acid obtained by a liquid phase oxidation reaction of para-xylene, a crude terephthalic acid crystal is dissolved in water at high temperature and high pressure. A purification method for treating with hydrogen in the presence of a platinum group metal catalyst such as palladium / carbon is known (Japanese Patent Publication No. 41-16860, etc.). When this purification method is carried out industrially, usually, in advance, by a tube heater, the crude terephthalic acid crystals are dissolved in a predetermined proportion of water under high pressure, for example, at a high temperature of 260 ° C. or higher,
From the relation of the dissolution rate of terephthalic acid, the dissolution may be insufficient depending on the crystal particle diameter of the crude terephthalic acid. If undissolved terephthalic acid crystals flow into the packed bed of the platinum group metal catalyst, stable continuous operation becomes impossible.

【0003】このため、従来粗テレフタル酸を完全溶解
させる方法として、通常、チューブ型加熱器と触媒の充
填層から成る反応器との間に、別に、バッファー溶解槽
を設け、ここで、完全溶解させている(特公昭51−3
2618号等)。このバッファー溶解槽での滞留時間
は、通常、数分〜数十分程度となるが、この場合、テレ
フタル酸水溶液を精製反応とは関係のない工程で260
℃以上の高温下に余けいに保持することとなり、そのた
め、最終的に得られる精製テレフタル酸の品質上の問題
において好ましいことではない。
[0003] Therefore, as a conventional method for completely dissolving crude terephthalic acid, a buffer dissolving tank is separately provided between a tube-type heater and a reactor comprising a packed bed of a catalyst. (Tokubosho 51-3)
No. 2618). The residence time in this buffer dissolution tank is usually about several minutes to several tens of minutes. In this case, the terephthalic acid aqueous solution is converted to 260
It will be kept excessively at a high temperature of not less than ° C., which is not preferable in terms of the quality problem of the finally obtained purified terephthalic acid.

【0004】[0004]

【発明が解決しようとする課題】本発明は上記実情に鑑
み、粗テレフタル酸の溶解処理をバッファー溶解槽を設
けなくても短時間で確実に行い、未溶解の結晶が触媒充
填層に通液されることのないテレフタル酸結晶の溶解方
法を提供し、かつ、熱履歴をなるべく少なくした優れた
品質の高純度テレフタル酸を製造する方法を提供しよう
とするものである。
DISCLOSURE OF THE INVENTION In view of the above circumstances, the present invention reliably dissolves crude terephthalic acid in a short time without providing a buffer dissolving tank, and allows undissolved crystals to pass through the catalyst packed layer. An object of the present invention is to provide a method for dissolving terephthalic acid crystals which is not performed, and to provide a method for producing high-quality terephthalic acid of excellent quality with as little heat history as possible.

【0005】[0005]

【課題を解決するための手段】本発明者等は上記目的を
達成するために鋭意検討を行った結果、粗テレフタル酸
をチューブ型加熱器で溶解処理した後の水溶液を特定構
造を有する充填塔型反応器に直接供給することにより粗
テレフタル酸水溶液中の微量不溶物を効率よく溶解させ
ることができ、処理量も増大することができることを見
いだし本発明を完成した。
Means for Solving the Problems The present inventors have conducted intensive studies in order to achieve the above object, and as a result, the aqueous solution obtained by dissolving crude terephthalic acid with a tube-type heater is used to fill a packed tower having a specific structure. The present invention has been completed by finding that a small amount of insolubles in a crude terephthalic acid aqueous solution can be efficiently dissolved by directly supplying the solution to the reactor, and the throughput can be increased.

【0006】すなわち、本発明の要旨は、パラキシレン
の酸化反応により得られた粗テレフタル酸を、高温高圧
下で水中に溶解し、次いで該粗テレフタル酸水溶液を水
素の供給下、白金族金属を含む触媒層を有する充填塔型
反応器に通過させることにより高純度テレフタル酸を製
造する方法において、充填塔型反応器上部入口部分にオ
ーバーフロー壁により仕切られて形成された滞留ゾーン
を設け、該滞留ゾーンに粗テレフタル酸水溶液を供給
し、オーバーフロー壁をオーバーフローさせることによ
り該滞留ゾーンの下部に位置する充填層に通液すること
を特徴とする高純度テレフタル酸の製造方法に存する。
That is, the gist of the present invention is to dissolve the crude terephthalic acid obtained by the oxidation reaction of para-xylene in water at a high temperature and a high pressure, and then convert the aqueous solution of the crude terephthalic acid to a platinum group metal under a supply of hydrogen. In the method for producing high-purity terephthalic acid by passing through a packed column reactor having a catalyst layer containing, a retention zone formed by being separated by an overflow wall at an upper inlet portion of the packed column reactor is provided. A method for producing high-purity terephthalic acid, characterized in that a crude terephthalic acid aqueous solution is supplied to a zone, and overflows an overflow wall to flow through a packed bed located below the retention zone.

【0007】以下、本発明を詳細に説明する。パラキシ
レンの酸化反応としては、通常、パラキシレンを酢酸溶
媒中、例えば、コバルト、マンガン及び臭素を含む触媒
の存在下で、通常170〜230℃の温度条件下で、分
子状酸素と反応させる、いわゆるSD法が採用される。
かかる反応により得られる粗テレフタル酸とは、不純物
として4−カルボキシベンズアルデヒド(以下「4CB
A」という)を重量基準で通常1000〜5000pp
m含有する結晶性のものである。
Hereinafter, the present invention will be described in detail. As the oxidation reaction of para-xylene, usually, para-xylene is reacted with molecular oxygen in an acetic acid solvent, for example, in the presence of a catalyst containing cobalt, manganese, and bromine, usually at a temperature of 170 to 230 ° C. The so-called SD method is adopted.
Crude terephthalic acid obtained by such a reaction refers to 4-carboxybenzaldehyde (hereinafter referred to as “4CB”) as an impurity.
A ") is usually 1000 to 5000 pp on a weight basis.
It is crystalline containing m.

【0008】テレフタル酸は常温常圧では低溶解性であ
り、テレフタル酸の溶解度を高めるためには高温高圧と
する必要がある。粗テレフタル酸の水溶液を得る一般的
な方法としては次のような方法が例示される。粗テレフ
タル酸を水に対して10〜40重量%の割合で混合し、
スラリーとする。次に、このスラリーは昇圧ポンプによ
り反応圧力プラスαの圧力(プラスαとは反応器に到達
するまでの圧力損失を考慮した圧力である)まで加圧さ
れ、多管式熱交換器を組み合わせた加熱溶解工程へ供給
される。加熱による昇温は所定の反応温度まで、好まし
くは、複数の熱交換器群により段階的に行われる。この
加熱溶解工程におけるスラリーの滞留時間は、通常、粗
テレフタル酸の結晶粒子が完全溶解するのに必要充分な
ものとして設計され、この加熱器内における滞留時間は
加熱方式により異なるが、通常60〜90秒である。
[0008] Terephthalic acid has low solubility at normal temperature and normal pressure, and it is necessary to increase the temperature and pressure to increase the solubility of terephthalic acid. As a general method for obtaining an aqueous solution of crude terephthalic acid, the following method is exemplified. The crude terephthalic acid is mixed at a ratio of 10 to 40% by weight with respect to water,
Slurry. Next, the slurry was pressurized to a reaction pressure plus α pressure (plus α is a pressure in consideration of a pressure loss until reaching the reactor) by a pressurizing pump, and combined with a multitubular heat exchanger. It is supplied to the heating and melting step. The temperature increase by heating is carried out up to a predetermined reaction temperature, preferably stepwise by a plurality of heat exchanger groups. The residence time of the slurry in the heating and dissolving step is usually designed to be necessary and sufficient to completely dissolve the crystal particles of the crude terephthalic acid. The residence time in the heater varies depending on the heating method, but is usually 60 to 60. 90 seconds.

【0009】上記のように得られた粗テレフタル酸水溶
液を白金族金属を含む触媒層を有する充填塔型反応器に
通過させ、該反応器内で水素添加反応処理により粗テレ
フタル酸を精製する。白金族金属を含む触媒としては、
パラジウム、ルテニウム、ロジウム、オスミウム、イリ
ジウム、白金等あるいはこれらの金属酸化物から選ばれ
る。これらの金属もしくは金属酸化物は触媒としてその
まま使用することもできるが、活性炭のごとき担体に、
通常0.5〜10重量%担持したものが特に有効であ
る。反応条件としては、温度が、通常200〜400
℃、好ましくは250〜350℃、圧力は、通常70k
g/cm2 G以上、好ましくは80〜100kg/cm
2 Gである。水素は反応器内に反応圧以上に加圧されて
反応器内に供給されることになる。
[0009] The crude terephthalic acid aqueous solution obtained as described above is passed through a packed tower reactor having a catalyst layer containing a platinum group metal, and the crude terephthalic acid is purified by a hydrogenation reaction treatment in the reactor. As a catalyst containing a platinum group metal,
It is selected from palladium, ruthenium, rhodium, osmium, iridium, platinum and the like or metal oxides thereof. These metals or metal oxides can be used as a catalyst as they are, but they can be used as carriers such as activated carbon.
Usually, those loaded with 0.5 to 10% by weight are particularly effective. As the reaction conditions, the temperature is usually 200 to 400.
℃, preferably 250-350 ℃, the pressure is usually 70k
g / cm 2 G or more, preferably 80-100 kg / cm
Is a 2 G. Hydrogen is supplied to the reactor after being pressurized into the reactor at a pressure higher than the reaction pressure.

【0010】本発明は、上記の粗テレフタル酸の精製に
おいて特定の構造の充填塔型反応器を用いる点に特徴を
有するものである。本発明で用いられる充填塔型反応器
は、上部入口部分にオーバーフロー壁により仕切られた
粗テレフタル酸水溶液の滞留ゾーンを設け、該滞留ゾー
ンの下部に触媒充填層を有する反応ゾーンを持つ構造で
ある。若干の未溶解結晶粒子を含む可能性のあるこの粗
テレフタル酸水溶液は、まず、上部の滞留ゾーンに加
圧、供給され反応器上部より下部に向かって流れ塔底よ
り流出する。水素も上部より供給され、液相中に溶解し
ていく。反応器内部は上方に水蒸気と水素ガスの気相部
分が存在し、下方の触媒充填層の全体を含む大部分が液
相部となる。そして、テレフタル酸水溶液の反応器内の
液相部の平均滞留時間は通常5〜30分である。
The present invention is characterized in that a packed tower reactor having a specific structure is used in the purification of the above crude terephthalic acid. The packed tower type reactor used in the present invention has a structure in which a retention zone for a crude terephthalic acid aqueous solution partitioned by an overflow wall is provided at an upper inlet portion, and a reaction zone having a catalyst packed layer is provided below the retention zone. . This crude terephthalic acid aqueous solution, which may contain some undissolved crystal particles, is first pressurized and supplied to the upper residence zone, flows downward from the upper part of the reactor, and flows out from the bottom of the reactor. Hydrogen is also supplied from above and dissolves in the liquid phase. Inside the reactor, a vapor phase portion of water vapor and hydrogen gas is present above, and most of the lower portion, including the entire catalyst packed bed, becomes a liquid phase portion. The average residence time of the terephthalic acid aqueous solution in the liquid phase in the reactor is usually 5 to 30 minutes.

【0011】上記反応器の構造について、特に、反応器
の上部の構造について、図面を用いて更に説明する。図
1は、本発明に用いられる反応器の一例の構造を示すも
のである。1は水素供給口、2は粗テレフタル酸水溶液
供給口、3はオーバーフロー壁、4は仕切板、5は触媒
充填層、6はテレフタル酸水溶液の出口および7はテレ
フタル酸水溶液の流路を示す。そして、反応を行う場
合、仕切板4と触媒充填層5との間に液相と気相の界面
部分が存在する。
The structure of the above-mentioned reactor, particularly the structure of the upper part of the reactor, will be further described with reference to the drawings. FIG. 1 shows the structure of an example of the reactor used in the present invention. 1 is a hydrogen supply port, 2 is a crude terephthalic acid aqueous solution supply port, 3 is an overflow wall, 4 is a partition plate, 5 is a catalyst packed layer, 6 is a terephthalic acid aqueous solution outlet, and 7 is a terephthalic acid aqueous solution flow path. When the reaction is performed, an interface between the liquid phase and the gas phase exists between the partition plate 4 and the catalyst packed layer 5.

【0012】水素は塔頂付近の供給口1より供給され
る。水素は、高温高圧の塔内においてテレフタル酸水溶
液中に充分溶解するが、溶解効率を高めるためには、オ
ーバーフローして下降するテレフタル酸水溶液の流路に
沿って水素ガスを供給し、液中に巻き込み易くすると好
ましい。粗テレフタル酸水溶液は供給口2より供給され
る。供給口2の位置は、仕切板4からオーバーフロー壁
3の通常0.2〜0.4倍の高さに設置し、オーバーフ
ロー壁3と仕切板4に囲まれた部分が滞留ゾーンを形成
する。従って、オーバーフロー壁3の高さは、滞留ゾー
ンでの水溶液の滞留時間を考慮して適宜設定され、ま
た、滞留ゾーンの温度は、通常、反応ゾーンと同様に設
定される。この滞留ゾーンの主な意義は粗テレフタル酸
水溶液をなるべく短時間で反応ゾーンへ供給し、かつ、
この水溶液中にわずかに混在する未溶解の比較的大きな
結晶粒子を該滞留ゾーンに滞留させ、ここで完全溶解さ
せることにある。
[0012] Hydrogen is supplied from a supply port 1 near the top of the tower. Hydrogen is sufficiently dissolved in the terephthalic acid aqueous solution in the high temperature and high pressure column, but in order to increase the dissolving efficiency, hydrogen gas is supplied along the flow path of the terephthalic acid aqueous solution that overflows and descends, Preferably, it is easy to get involved. The crude terephthalic acid aqueous solution is supplied from the supply port 2. The position of the supply port 2 is set at 0.2 to 0.4 times the height of the overflow wall 3 from the partition plate 4, and a portion surrounded by the overflow wall 3 and the partition plate 4 forms a stagnation zone. Therefore, the height of the overflow wall 3 is appropriately set in consideration of the residence time of the aqueous solution in the retention zone, and the temperature of the retention zone is usually set in the same manner as in the reaction zone. The main significance of this residence zone is to supply the crude terephthalic acid aqueous solution to the reaction zone in as short a time as possible, and
The purpose is to make undissolved relatively large crystal particles slightly mixed in the aqueous solution stay in the staying zone, where they are completely dissolved.

【0013】滞留ゾーン内に供給された水溶液はオーバ
ーフロー壁3に沿って上昇し、最後にオーバーフロー
し、仕切板4の下側の反応ゾーンへ供給されることにな
る。従って、もし、未溶解結晶粒子があっても、該粒子
は、オーバーフローすることなく滞留ゾーンの下部へ沈
降して滞留し、そこで供給液や水素の流れによる混合に
供され速やかに溶解されることとなる。未溶解粒子の滞
留は溶液の上昇流と重力の作用による沈降との関係から
生ずるので溶液の上昇流の速度をなるべく小さくし、か
つ、滞留ゾーンの容量はなるべく小さくすることが好ま
しい。滞留ゾーンでの滞留時間は装置の大きさによって
も異なるが、例えば、0.5〜5分程度である。
The aqueous solution supplied into the retention zone rises along the overflow wall 3 and finally overflows, and is supplied to the lower reaction zone of the partition plate 4. Therefore, even if there are undissolved crystal particles, the particles settle to the lower part of the stagnation zone without overflowing and stagnate, where they are subjected to mixing by the supply liquid or the flow of hydrogen and are rapidly dissolved. Becomes Since the retention of the undissolved particles occurs due to the relationship between the rising flow of the solution and the sedimentation due to the action of gravity, it is preferable to reduce the speed of the rising flow of the solution as much as possible and to reduce the volume of the retention zone as much as possible. The residence time in the retention zone varies depending on the size of the apparatus, but is, for example, about 0.5 to 5 minutes.

【0014】このため溶液が上昇する部分の水平方向の
断面積をなるべく大きくする方が好ましい。例えば、図
1の反応器における滞留ゾーン内の場合は、水溶液が上
昇する円筒部分の径と反応ゾーンの径とが同一円筒であ
り、オーバーフローし下降する流路が反応ゾーン内径と
同心円の円筒形をしているが、反応器内径をDとすると
オーバーフロー壁3の長さがDの0.3〜0.9倍、水
溶液がオーバーフローし下降する流路の円筒部分の直径
がDの0.2〜0.4倍の範囲に設置すると好ましい。
For this reason, it is preferable to increase the horizontal sectional area of the portion where the solution rises as much as possible. For example, in the case of the residence zone in the reactor of FIG. 1, the diameter of the cylindrical portion where the aqueous solution rises and the diameter of the reaction zone are the same cylinder, and the overflowing and descending flow path has a cylindrical shape concentric with the inner diameter of the reaction zone. When the inner diameter of the reactor is D, the length of the overflow wall 3 is 0.3 to 0.9 times D, and the diameter of the cylindrical portion of the flow channel in which the aqueous solution overflows and descends is 0.2 of D. It is preferable to set it in the range of up to 0.4 times.

【0015】以上のような原理に基づく構造の反応器で
あれば、図1のものに限定されるものではなく、例え
ば、図2に示したように、塔頂付近の供給口2より粗テ
レフタル酸水溶液を供給し、該供給口2の先端部を包含
するようなかたちで、オーバーフロー壁3と仕切板4包
含によって成る滞留ゾーンを設ける構造のものでもよ
い。以上のような方法でオーバーフローさせたテレフタ
ル酸水溶液は、反応ゾーン、具体的には触媒充填層5を
経て精製され、反応器の下部の出口6より系外に流出さ
せる。該流出液は、通常、晶析、乾燥工程を経て精製テ
レフタル酸結晶として回収される。
If the reactor has a structure based on the above principle, the reactor is not limited to the one shown in FIG. 1. For example, as shown in FIG. A structure in which an acid aqueous solution is supplied and a stagnation zone including the overflow wall 3 and the partition plate 4 may be provided so as to include the leading end of the supply port 2. The terephthalic acid aqueous solution overflowed by the above-mentioned method is purified through a reaction zone, specifically, a catalyst packed bed 5, and flows out of the system from an outlet 6 at a lower portion of the reactor. The effluent is usually recovered as purified terephthalic acid crystals through crystallization and drying steps.

【0016】[0016]

【実施例】次に本発明について実施例をあげて、更に具
体的に説明するが、本発明はその要旨を超えない限り、
以下の実施例に限定されるものではない。図−1に示す
ような構造の反応器を実際に用いてテレフタル酸の製造
を行った。
EXAMPLES Next, the present invention will be described in more detail with reference to examples, but the present invention is not limited thereto unless it exceeds the gist thereof.
The present invention is not limited to the following embodiments. Terephthalic acid was produced using a reactor having a structure as shown in FIG.

【0017】即ち、原料粗テレフタル酸(4CBAをテ
レフタル酸に対して2700ppm含む)を水溶液濃度
で30重量%のスラリーとし、これを圧力90kg/c
2Gに昇圧し、多管式熱交換器により285℃まで昇
温した。ここでの滞留時間は約90秒とした。スラリー
は流量で45m3 /hで本発明の充填塔型反応器に供給
した。反応器は図1のような構造で、塔径1260m/
m、高さ10m、触媒層の高さは7mである。滞留ゾー
ンの構造は、オーバーフロー壁の高さ700m/m下降
管の直径は300m/mである。ここでの滞留時間は約
1分とした。反応条件は、圧力80kg/cm2 G、温
度285℃、水素分圧8kg/cm2 とし、触媒は0.
5%パラジウム/カーボンを用いた。このような条件で
約170日間連続運転を行ったが、反応器内での閉塞に
よるトラブルもなく、得られた精製テレフタル酸は、4
CBA濃度で6ppm以下という品質を維持できた。
That is, a slurry of raw terephthalic acid (containing 2700 ppm of 4CBA with respect to terephthalic acid) in an aqueous solution concentration of 30% by weight was prepared, and this was subjected to a pressure of 90 kg / c.
The pressure was raised to m 2 G, and the temperature was raised to 285 ° C. by a multitubular heat exchanger. The residence time here was about 90 seconds. The slurry was supplied at a flow rate of 45 m 3 / h to the packed column reactor of the present invention. The reactor has a structure as shown in FIG.
m, the height is 10 m, and the height of the catalyst layer is 7 m. The structure of the residence zone is such that the height of the overflow wall is 700 m / m and the diameter of the downcomer is 300 m / m. The residence time here was about 1 minute. The reaction conditions were a pressure of 80 kg / cm 2 G, a temperature of 285 ° C., a hydrogen partial pressure of 8 kg / cm 2 , and a catalyst of 0.1 kg / cm 2 .
5% palladium / carbon was used. The continuous operation was performed for about 170 days under such conditions, but there was no trouble due to clogging in the reactor, and the obtained purified terephthalic acid was
The quality of 6 ppm or less in CBA concentration could be maintained.

【0018】[0018]

【発明の効果】本発明によれば、未溶解の粗テレフタル
酸結晶粒子による閉塞などのトラブルもなく品質の優れ
た高純度テレフタル酸を製造することができる。
According to the present invention, high-purity high-purity terephthalic acid can be produced without troubles such as clogging by undissolved coarse terephthalic acid crystal particles.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明に用いられる充填型反応器の一例の構造
を示す図である。
FIG. 1 is a view showing the structure of an example of a packed reactor used in the present invention.

【図2】本発明に用いられる充填型反応器の一例の構造
を示す図である。
FIG. 2 is a diagram showing the structure of an example of a packed reactor used in the present invention.

【符号の説明】[Explanation of symbols]

1 水素の供給口 2 粗テレフタル酸水溶液供給口 3 オーバーフロー壁 4 仕切板 5 触媒充填層 6 テレフタル酸水溶液出口 7 テレフタル酸水溶液の流路 Reference Signs List 1 hydrogen supply port 2 crude terephthalic acid aqueous solution supply port 3 overflow wall 4 partition plate 5 catalyst packed layer 6 terephthalic acid aqueous solution outlet 7 terephthalic acid aqueous solution flow path

───────────────────────────────────────────────────── フロントページの続き (72)発明者 仰木 啓訓 福岡県北九州市八幡西区黒崎城石1番1 号 三菱化成株式会社黒崎工場内 (56)参考文献 特開 昭56−79635(JP,A) 特公 昭51−32618(JP,B1) (58)調査した分野(Int.Cl.7,DB名) C07C 63/26 C07C 51/487 ──────────────────────────────────────────────────続 き Continuation of the front page (72) Inventor Hironori Ogi 1-1 Kurosaki Castle Stone, Yawatanishi-ku, Kitakyushu City, Fukuoka Prefecture Inside the Kurosaki Plant of Mitsubishi Chemical Co., Ltd. (56) References JP-A-56-79635 (JP, A) No. 51-32618 (JP, B1) (58) Fields investigated (Int. Cl. 7 , DB name) C07C 63/26 C07C 51/487

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 パラキシレンの酸化反応により得られた
粗テレフタル酸を、高温高圧下で水中に溶解し、次いで
該粗テレフタル酸水溶液を水素の供給下、白金族金属を
含む触媒層を有する充填塔型反応器を通過させることに
より高純度テレフタル酸を製造する方法において、充填
塔型反応器の上部入口部分にオーバーフロー壁により仕
切られて形成された滞留ゾーンを設け、該滞留ゾーンに
粗テレフタル酸水溶液を供給し、オーバーフロー壁をオ
ーバーフローさせた後、該滞留ゾーンの下部に位置する
触媒充填層に通液することを特徴とする高純度テレフタ
ル酸の製造方法。
1. Crude terephthalic acid obtained by oxidation reaction of para-xylene is dissolved in water at high temperature and high pressure, and then the crude terephthalic acid aqueous solution is charged with a catalyst layer containing a platinum group metal under a supply of hydrogen. In the method for producing high-purity terephthalic acid by passing through a tower reactor, a retention zone formed by an overflow wall is provided at an upper inlet portion of a packed tower reactor, and crude terephthalic acid is provided in the retention zone. A method for producing high-purity terephthalic acid, comprising supplying an aqueous solution, causing the overflow wall to overflow, and then passing the solution through a catalyst packed bed located below the retention zone.
JP27457192A 1992-10-13 1992-10-13 Method for producing high-purity terephthalic acid Expired - Lifetime JP3232700B2 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP27457192A JP3232700B2 (en) 1992-10-13 1992-10-13 Method for producing high-purity terephthalic acid
DE4334100A DE4334100C2 (en) 1992-10-13 1993-10-06 Process for the production of high-purity terephthalic acid
TW082108289A TW225520B (en) 1992-10-13 1993-10-07
KR1019930021132A KR100267897B1 (en) 1992-10-13 1993-10-12 Process for producing highly pure terephthalic acid
GB9320992A GB2271568B (en) 1992-10-13 1993-10-12 Process for producing highly pure terephthalic acid
US08/134,907 US5420344A (en) 1992-10-13 1993-10-13 Process for producing highly pure terephthalic acid
CN93119113.0A CN1035763C (en) 1992-10-13 1993-10-13 Process for producing highly pure terephthalic acid

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27457192A JP3232700B2 (en) 1992-10-13 1992-10-13 Method for producing high-purity terephthalic acid

Publications (2)

Publication Number Publication Date
JPH06128191A JPH06128191A (en) 1994-05-10
JP3232700B2 true JP3232700B2 (en) 2001-11-26

Family

ID=17543599

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27457192A Expired - Lifetime JP3232700B2 (en) 1992-10-13 1992-10-13 Method for producing high-purity terephthalic acid

Country Status (1)

Country Link
JP (1) JP3232700B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004060848A1 (en) * 2002-12-09 2004-07-22 Mitsubishi Chemical Corporation Method of feeding solution of crude terephthalic acid to reactor
JP2008162958A (en) * 2006-12-28 2008-07-17 Mitsui Chemicals Inc Method for producing highly pure terephthalic acid

Also Published As

Publication number Publication date
JPH06128191A (en) 1994-05-10

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