JP3214792U - Suction nozzle for mounting - Google Patents

Abstract

A nozzle for use in an electronic component mounting machine, etc., which avoids wear of a suction surface and accompanying increase in reflected light (brightness), and particularly for mounting a microchip component having high heat resistance and high hardness. A suitable mounting suction nozzle is provided. In a mounting suction nozzle 1 in which a conductive material is added to partially stabilized zirconia as necessary, at least the tip suction surface 2 of the mounting suction nozzle 1 is made of chromium, tungsten, titanium, molybdenum, and the like. A carbon film 7 having a hardness (Hv) of 3000 kg / mm 2 or more is formed through an intermediate layer film 6 containing one or more selected from carbides, oxides, and nitrides thereof. [Selection] Figure 1

Description

Detailed description of the invention

  The present invention relates to a suction nozzle for mounting electronic components made of partially stabilized zirconia that is suitably used in an electronic component mounting machine for mounting electronic chip components such as a capacitor chip and a resistor chip on a circuit board.

  2. Description of the Related Art In recent years, in the field of circuit board mounting, electronic component mounting machines capable of mounting fine chip components at high speed and with high accuracy have been actively developed along with high integration and high accuracy of substrates. In this electronic component mounting machine, a mounting suction nozzle that sucks and holds chip components is attached to the tip of a vacuum suction head that sucks outside air, and the head portion reciprocates between a feeder portion and a circuit board. At this time, the chip component vacuum-sucked by the nozzle is mounted on the circuit board after determining the suction state of the chip part and the position of mounting the component by image analysis while the head unit moves between the feeder unit and the circuit board. Therefore, this image analysis is performed by irradiating light in the direction of the chip component and the suction surface from the front of the nozzle, and analyzing the shape of the chip component, the electrode position, and the like from the difference in the amount of reflected light.

  FIG. 2 is a schematic view showing an example of a mounting process of a chip component on a circuit board using the electronic component mounting machine.

  The electronic component mounting machine 10 shown in FIG. 2 is attached to the mounting nozzle 1 for component suction mounted at the tip of the head unit, the tray 12 of the feeder unit in which the chip components 11 are arranged, and the mounting nozzle 1 Light 13 for irradiating light toward the held chip component 11, CCD camera 14 for receiving reflected light from the chip component 11, and image analysis for processing the reflected light received by the CCD camera 14 The apparatus 15 is comprised. Here, the mounting nozzle 1 has a suction surface 2 for sucking and holding electronic components by vacuum suction as illustrated in FIG. 1, and a suction hole communicating from the rear end to the suction surface. 3 at the nozzle shaft center portion, a cylindrical portion 4 from the rear end of the nozzle toward the tip, and a conical portion 5 having an inverted conical shape on the tip side of the cylindrical portion 4. The chip component 11 is sucked and held on the suction surface 2 by sucking outside air in the direction from the rear end to the rear end.

  Then, in this electronic component mounting machine 10, when the mounting suction nozzle 1 moves to the tray 12 and sucks the chip components 11 arranged on the tray 12, the light 13 is directed to the chip components 11 sucked by the nozzle 1. The CCD camera 14 receives the reflected light that is reflected by the light hitting the main body of the chip component 11 and the like, and the image analysis device 15 shifts or positions the chip component 11 based on the image received by the CCD camera 14. Is measured, and the nozzle 1 that adsorbs the chip component 11 is moved to a predetermined position on a circuit board (not shown) based on the data, and the chip component 11 is mounted on the circuit board. .

  By the way, in recent years, the number of cases where circuit boards are used in high-temperature environments such as around the engine has increased. In addition to improving the heat resistance and durability of the board itself, chip components attached to the circuit board also have high temperatures. The use of chip parts having high heat resistance that can be stably used underneath is becoming widespread. This high heat-resistant chip component retains high heat resistance by coating the surface of the chip component with a coating liquid in which fine powder of silicon oxide, aluminum oxide or the like is dispersed in an epoxy resin. For this reason, the surface hardness of chip parts is naturally high.

  Under such circumstances, if a chip component with high surface hardness is mounted with the above mounting machine, the tip of the nozzle surface that holds the component by suction is severely worn, leading to a problem of image recognition due to reflected light that determines whether the component is attached or removed. There is a new problem caused by wear on the suction surface of the nozzle tip, such as being brought home without separation even when released, or frequent mounting mistakes.

  In order to respond to such a technical background, as a measure against the hardness of the nozzle suction surface, a method of coating a carbon film on the suction surface by a method such as ionization vapor deposition or sputtering has been attempted, and Patent Document 1 has been reported as an example. .

Japanese Patent Application Laid-Open No. 06-244592

However, in the above prior art examples, the hardness of the carbon film is at most about 1500 to 2500 Kg / mm ² , and not only can it withstand practical use, but also the adhesion between the carbon film and the adsorption surface is weak, There was a problem that the carbon film peeled off after a short period of mounting.

  In view of the above circumstances, the present invention avoids wear of the suction surface and the accompanying increase in reflected light (luminance) by providing a carbon film with high hardness and high adhesion on the tip suction surface of the suction nozzle for mounting. The object is to provide a nozzle suitable for mounting a microchip component having high heat resistance and high hardness.

  In order to solve the above problems, the inventors of the present invention have intensively studied to form a strong carbon film on the surface of the nozzle made of zirconia. By forming an intermediate layer film containing one or more selected from titanium, molybdenum and their carbides, oxides, and nitrides, and forming a carbon film having a specific hardness through the intermediate layer film, The present inventors have succeeded in forming a high-hardness carbon film having excellent adhesion with the adsorption surface, and have completed the present invention.

That is, the first of the present inventions is a mounting suction nozzle in which a conductive material is added to partially stabilized zirconia as necessary, and at least the tip suction surface of the mounting suction nozzle is made of chromium, A carbon film having a hardness (Hv) of 3000 kg / mm ² or more is formed through an intermediate layer film containing one or more selected from tungsten, titanium, molybdenum, and their carbides, oxides, and nitrides. Further, the second device relates to a nozzle in which the carbon film is a hydrogen-free amorphous carbon film.

  According to the present invention, the adsorption surface of the nozzle tip is specified via an intermediate layer film containing one or more selected from chromium, tungsten, titanium, molybdenum and their carbides, oxides, and nitrides. Since it has a carbon film with hardness, it is particularly suitable as a mounting nozzle for microchip components with high heat resistance and high hardness, and it suppresses wear on the nozzle suction surface during mounting and the accompanying increase in brightness. As a result, not only the service life of the nozzle is greatly extended, but also greatly contributes to improvement in mounting accuracy and high efficiency of electronic components.

(A) is a perspective view which shows one Embodiment of the suction nozzle for mounting of this invention, (B) is the side surface sectional drawing. Moreover, the circle frame protrusion of (B) is the elements on larger scale of a nozzle adsorption surface. These are the schematic diagrams which show the structural example of the electronic component mounting apparatus which mounts a chip component on a circuit board using the electronic component mounting machine provided with the suction nozzle for mounting of this invention.

  Hereinafter, the present invention will be described in detail.

  The suction nozzle 1 for mounting of the present invention is kneaded by adding a binder or a molding aid to a mixture of partially stabilized zirconia and, if necessary, a conductive material, and dried by a known method such as a spray dryer. This is a sintered molding nozzle mainly composed of partially stabilized zirconia produced by injection molding to form a nozzle after forming a powder or granulated raw material, and further through a removal and firing process. In addition, the carbon film 7 is interposed through an intermediate layer film 6 in which the tip adsorption surface of the nozzle contains one or more selected from chromium, tungsten, titanium, molybdenum and their carbides, oxides, and nitrides. It is formed.

  In the present invention, the zirconia partial stabilizer is preferably one of yttrium oxide, magnesium oxide, calcium oxide, cerium oxide and the like, and among them, yttrium oxide is preferable. The amount of yttrium oxide added is 1 to 5 mol%, preferably 2 to 4 mol%. If the amount is less than 1 mol%, the amount of monoclinic zirconia increases, cracks occur frequently in the sintered body, and the mechanical strength decreases. On the other hand, if the amount of yttrium oxide added exceeds 5 mol%, a large amount of cubic zirconia is generated in the sintered body, and in this case, too, high mechanical strength cannot be expected. However, there is a disadvantage that the production of tetragonal zirconia that produces a stress-induced phase transformation function peculiar to zirconia is reduced.

  In addition, the partially stabilized zirconia used in the present invention preferably has an average crystal particle size of 0.5 to 2.0 μm, and if the average crystal particle size is less than 0.5 μm, the stress-induced phase transformation function is not sufficiently exhibited. While mechanical strength such as excellent bending strength and fracture toughness cannot be obtained, if the average crystal particle size is larger than 2.0 μm, deterioration with time at a relatively low temperature of about 100 to 300 ° C. is likely to proceed. And wear resistance and impact resistance are reduced. In the present invention, the reason for limiting the nozzle material to partially stabilized zirconia is that it has high strength and fracture toughness based on the stress-induced phase transformation function peculiar to zirconia, and in the middle of various ceramics provided in the post-process. This is based on an empirical rule of excellent adhesion to the layer film, which is presumed to be due to some chemical compatibility with the intermediate layer film.

On the other hand, as the conductive material used in the present invention, at least one selected from metal oxides such as titanium oxide, iron oxide, nickel oxide, chromium oxide, silicon carbide, and silicon nitride, carbide, and nitride can be used. Among these, oxygen deficient titanium oxide is preferable in that it can provide high conductivity with a small addition amount, and thus a decrease in hardness can be minimized. The amount of these conductive materials added is the tip and rear of the nozzle that are necessary for avoiding troubles caused by electrostatic discharge or charging of the nozzle, such as electrostatic breakdown or take-away of the component when electronic components are mounted, and blowout or contamination of the component. What is necessary is just to determine suitably according to the kind of electrically conductive material so that the electrical resistance value between ends may be 10 < ³ > -10 < ¹⁰ > (omega | ohm), for example, in the case of metal oxides, such as iron oxide and nickel oxide, with respect to partially stabilized zirconia In the case of oxygen-deficient titanium oxide, the addition amount is preferably 10 to 20% by weight based on partially stabilized zirconia.

  Here, oxygen-deficient titanium oxide is obtained by reducing part of oxygen in titanium dioxide by reducing and firing a molded body obtained by adding titanium dioxide or the like to partially stabilized zirconia under conditions of 1300 to 1500 ° C. The average crystal particle diameter is about 0.03 to 0.30 μm, represented by the chemical formula TiOx (1.50 ≦ X ≦ 1.95). In other words, titanium dioxide is white and an insulator at room temperature, but when reduced and fired at high temperature, oxygen deficiency occurs, and the color becomes gray, blue-black, and true black, and the electrical conductivity increases. When the X value of the chemical formula TiOx of the oxygen-deficient titanium oxide is less than 1.50, the crystal tends to change to a NaCl type structure, causing volume shrinkage and decreasing the strength, while the X value is 1.95. When it exceeds, blackness and electroconductivity will be insufficient and the target adsorption nozzle for mounting cannot be obtained.

  In the present invention, the oxygen amount in oxygen-deficient titanium oxide, that is, the X value of TiOx, is usually changed from black to white by oxidizing oxygen-deficient titanium oxide into titanium dioxide at a temperature of 500 to 600 ° C. in the atmosphere. Because of the change, the mounting nozzle after reduction firing is set to a temperature rising rate of 20 ° C./min in the atmosphere, and is subjected to thermal analysis (TG-DTA) at room temperature to 1000 ° C., and the weight increase during that time is oxygen accompanying oxidation It can be calculated by obtaining the X value as the amount of increase.

The oxygen-deficient titanium oxide of the present invention includes low-order titanium oxides such as Ti ₂ O ₃ , Ti ₃ O ₅ , Ti ₄ O ₇ , Ti ₅ O _9, etc. Those composed of deficient titanium oxide, those in which oxygen deficient titanium oxide and titanium dioxide are mixed, those reduced in order that the degree of oxygen deficiency is different between the inside of the particle and the particle surface, or the like can be used. When the component composition is represented by the general formula TiOx, it is important that the X value is 1.50 to 1.95.

  The mounting suction nozzle of the present invention is also preferably one in which 90% or more of the total zirconia crystal phase on the outer peripheral surface other than the suction surface is composed of tetragonal zirconia when assembled to an electronic component mounting device. If it is less than 90%, strength and fracture toughness are lowered, and excellent durability cannot be obtained.

  The suction nozzle for mounting according to the present invention is made of chromium, chromium carbide, chromium oxide, chromium nitride, tungsten, tungsten carbide, tungsten under the gas cluster ion beam-assisted irradiation on at least the tip suction surface of the partially stabilized zirconia nozzle. One or more of oxides, tungsten nitrides, titanium, titanium carbides, titanium oxides, titanium nitrides, molybdenum, molybdenum carbides, molybdenum oxides and molybdenum nitrides (hereinafter also referred to as intermediate layer film-forming substances) An intermediate layer film containing (referred to) is formed (intermediate layer film forming step), and further, a carbon film is formed on the surface thereof under the aid of a gas cluster ion beam (carbon film forming step).

Here, the gas cluster ion beam that is used in the intermediate layer film forming step and the carbon film forming step is referred to as a rare gas (eg, argon, helium, neon), oxygen, carbon oxide (eg, CO, CO _2, etc.). , Nitrogen and nitride (eg, dinitrogen monoxide (N ₂ O), nitric oxide (NO), nitric oxide (N ₂ O ₃ ), nitrogen dioxide (NO ₂ ), hydrazine (N ₂ H ₄ ), etc.) It is preferable to consist of one kind of gas selected from the above or two or more kinds of mixed gases. The acceleration voltage for obtaining the gas cluster ion beam is preferably 1 to 100 kV, more preferably 1 to 50 kV. The number of atoms or molecules (cluster size) constituting the gas cluster is not particularly limited, but is preferably in the range of 10 to 200,000.

In addition, if the nozzle tip adsorption surface before forming the intermediate layer film and the surface after forming the intermediate layer film are preliminarily irradiated with a gas cluster ion beam, the treated surface is cleaned and flattened to further improve the adhesion. be able to. A gas cluster ion beam applied for such purposes includes rare gases (eg, argon, helium, neon), oxygen, carbon oxides (eg, CO, CO _2, etc.), nitrogen and nitrides (eg, dinitrogen monoxide (N ₂ )). O), nitric oxide (NO), nitric oxide (N ₂ O ₃ ), nitrogen dioxide (NO ₃ ), hydrazine (N ₂ H ₄ ), etc.) Preferably it consists of. The acceleration voltage for obtaining the gas cluster ion beam is preferably 1 to 100 kV, more preferably 1 to 50 kV. The number of atoms or molecules (cluster size) constituting such a gas cluster is preferably 10 to 200,000. Moreover, since the gas cluster ion beam used for the surface cleaning and planarization treatment can be obtained from the same source as the gas cluster ions used for forming the intermediate layer film and the carbon film, it is continuously used in the same vacuum chamber. Can be processed. In addition, the tip adsorbing surface before forming the intermediate layer film is pre-plated or polished with one or more kinds of plating selected from chrome plating, nickel plating, cobalt plating, copper plating, and alloy plating thereof. This can further improve the adhesion.

  In the present invention, as a method for forming the intermediate layer film, for example, the intermediate layer film-forming substance is evaporated and vaporized under vacuum decompression, and this is ionized or not ionized and adhered to the surface of the nozzle adsorption surface. An example is a method in which a gas cluster ion beam is assisted to form an intermediate layer film firmly on the adsorption surface.

Specific examples of the intermediate layer film forming material include Cr, CrC, Cr ₂ O ₃ , CrN, W, WC, WO ₂ , WO ₃ , WN, WN ₂ , Ti, TiC, TiO, TiO ₂ , and Ti ₂ O _3. TiN, Mo, MoC, Mo ₂ C, MoO ₂ , MoO ₃ , Mo ₂ N, or a mixture thereof. These intermediate layer film-forming substances are deposited on the surface of the adsorption surface as they are, and form an intermediate layer film by irradiating the adsorption surface with a gas cluster ion beam. Examples of means for evaporating and evaporating the intermediate film forming material include known means such as sputtering, laser ablation, ion beam, electron beam, or crucible heating. The means for ionizing the intermediate film forming material may be a known means. Examples of such means include electron impact ionization (EI) means, desorption electron ionization (DEI). Means, field ionization (FI) means, or photoionization means. When the intermediate layer film-forming substance is ionized and deposited on the surface of the adsorption surface, the particles of the ionized intermediate layer film-forming substance may be accelerated by a high voltage or the like and collide with the surface of the adsorption surface to be deposited. . This may be also in accordance with known means, and a known accelerator or the like can be used.

  The formation conditions of the intermediate layer film include the vacuum decompression degree at the time of film formation, the nozzle adsorption surface temperature, the number of atoms or the number of molecules of ionized particles of the intermediate layer film forming material or the ratio of the gas cluster ions, and Examples of the acceleration voltage of gas cluster ions can be given, and these can be appropriately determined in consideration of the kind of the intermediate layer film-forming substance, the characteristics of the intermediate layer film, the film formation rate, and the like.

  The gas cluster in the gas cluster ion beam used in the intermediate layer film forming step is usually generated from a cluster gas. More specifically, when the cluster gas is released from the nozzle for generating the cluster under vacuum decompression, the cluster gas is cooled by the adiabatic expansion action at that time, and the plurality of atoms or molecules described above are condensed by cooling, A gas cluster is generated.

The atoms or molecules constituting the gas cluster are usually gaseous atoms or molecules under normal temperature and pressure conditions, but are not particularly limited as long as they are atoms or molecules that can be used for the gas cluster. For example, rare gas (eg, argon, helium, neon, etc.), oxygen, carbon oxide (eg, CO, CO _2, etc.), nitrogen, nitride (eg, dinitrogen monoxide (N ₂ O), nitric oxide (NO)) , Dinitrogen trioxide (N ₂ O ₃ ), nitrogen dioxide (NO ₂ ), hydrazine (N ₂ H ₄ ), and the like. The cluster gas is usually an atom or molecule gas constituting the gas cluster, and may be one kind of atom or molecule gas, or two or more kinds of mixed gases. The number of atoms or molecules (cluster size) constituting the gas cluster is not limited, but is preferably 10 to 200,000. The distribution of the cluster size can be appropriately selected depending on the gas pressure and temperature, and the size and shape of the nozzle.

  The gas cluster is ionized by a known means such as irradiating ionizing radiation such as an electron beam, and then accelerated by a known means such as applying a voltage to impart acceleration energy to the ionized particle, and the gas cluster ion beam It becomes. Such irradiation may be continuous irradiation or intermittent irradiation.

  The ratio of the number of atoms or molecules of the intermediate layer film-forming substance or its ionized particles to the number of gas cluster ions is such that, for example, the number of molecules constituting the intermediate layer film-forming substance is 1 to 5,000 molecules. The number of ions is preferably 1 to 10. Further, the voltage for accelerating the gas cluster ions is not particularly limited, and is set within a range in which an intermediate layer film having desired characteristics is formed. For example, in the present invention, the acceleration voltage of gas cluster ions is preferably in the range of about 1 to 100 kV, and more preferably in the range of about 1 to 50 kV.

  By the above operation, when gas cluster ions collide with the surface of the nozzle adsorption surface many times, a local and instantaneous high-temperature and high-pressure state occurs, so that the substrate is dense at room temperature and stable over time without heating the substrate. An intermediate layer film is formed.

  In addition, when a gas cluster ion beam is assisted and irradiated at a high acceleration voltage (for example, an acceleration voltage of 100 to 300 kV) in the initial stage of the intermediate film formation in this step, a mixing layer of the intermediate film and the adsorption surface is formed. This mixing layer contributes to improving the adhesion between the adsorption surface and the intermediate layer film. In the present invention, the thickness of the intermediate layer film is not particularly limited, but is preferably in the range of 1 nm to 1 μm.

Next, the carbon film forming process will be described.
As a means used in the carbon film forming step, for example, an intermediate layer obtained in the intermediate layer film forming step is obtained by evaporating and evaporating a carbonaceous material under vacuum or reduced pressure, and ionizing or not ionizing the carbonaceous material. Examples thereof include a means for forming a carbon film on the intermediate layer film by depositing on the film and assisting irradiation with a gas cluster ion beam.

  Examples of the carbonaceous material used in the carbon film forming step include various carbon materials excluding diamond, and more specifically, fullerene, carbon nanotube, graphite, amorphous carbon, and carbine containing no hydrogen. 1 type or 2 types or more chosen from among these. These carbonaceous materials preferably contain no hydrogen other than impurities and are amorphous in terms of maintaining the heat resistance of the carbon film itself and obtaining high hardness. Among them, fullerene, carbon nanotube, or a homologue thereof is exemplified as a preferable one. These carbonaceous materials are usually deposited on the intermediate layer film by being evaporated and then further ionized or not ionized. Examples of means for evaporating the carbonaceous material include known means such as sputtering, laser ablation, ion beam, electron beam, and crucible heating. The means for ionizing the carbonaceous material may be a known means. Examples of such means include electron impact ionization (EI) means, desorption electron ionization (DEI) means, A field ionization (FI) means, a photoionization means, etc. are mentioned. When the carbonaceous material is ionized and adhered, the ionized particles of the carbonaceous material may be accelerated by a high voltage or the like and collide with the surface of the intermediate layer film to be adhered. This may be also in accordance with known means, and a known accelerator or the like may be used.

  The conditions for forming the carbon film include the vacuum pressure reduction during film formation, the nozzle adsorption surface temperature during film formation, the number of atoms or molecules of carbonaceous material deposited particles or ionized particles, and the ratio of gas cluster ions, Examples include acceleration voltage of gas cluster ions, etc., which can be appropriately determined in consideration of the type of carbonaceous material, the characteristics of the carbon film, the deposition rate, and the like.

The atoms or molecules constituting the gas cluster used for forming the carbon film are usually atoms or molecules that are gaseous under normal temperature and pressure conditions. It is not limited. For example, rare gas (eg, argon, helium, neon), oxygen, carbon oxide (eg, CO, CO ₂ etc.), nitrogen, nitride, (eg, dinitrogen monoxide (N ₂ O), nitric oxide (NO) ), Dinitrogen trioxide (N ₂ O ₃ ), nitrogen dioxide (NO ₂ ), hydrazine (N ₂ H ₄ ), and the like). Such a cluster gas is usually an atom or molecule gas constituting a gas cluster, and may be one kind of atom or molecule gas, or two or more kinds of mixed gases. The number of atoms or molecules (cluster size) constituting the gas cluster is not limited, but is preferably 10 to 200,000. The distribution of the cluster size can be appropriately selected depending on the gas pressure and temperature, and the size and shape of the nozzle.

  The gas cluster is ionized by a known means such as electron beam irradiation, and then accelerated by a known means such as applying acceleration energy (for example, acceleration voltage) to become a gas cluster ion beam. In this step, this gas cluster ion beam is irradiated. Such irradiation may be continuous irradiation or intermittent irradiation.

  The ratio of the number of atoms of the vaporized particles of carbonaceous material or its ionized particles to the number of gas cluster ions is, for example, 1 to 10 gas cluster ions with respect to 1 to 5,000 atoms constituting the carbonaceous material. It is preferable. Further, the voltage for accelerating the gas cluster ions is not particularly limited, and is set within a range in which a carbon film having desired characteristics is formed. For example, in the present invention, the acceleration voltage of gas cluster ions is preferably in the range of 1 to 100 kV.

  By the above operation, when gas cluster ions collide with the adsorption surface, many local and instantaneous high-temperature and high-pressure conditions occur, so that the carbon is stable and stable over time without heating the adsorption surface. A film is formed.

  The carbon film obtained by this step does not need to use a hydrogen-containing substance in the film-forming process, so that the heat resistance is not impaired when the carbon film contains hydrogen. In addition, the carbon film according to the present invention has high heat resistance in which the graphitization temperature reaches 400 ° C. or higher, that is, graphitization resistance and structural stability.

  In the initial stage of carbon film formation in this step, if a gas cluster ion beam is assisted irradiation with a high acceleration voltage (for example, an acceleration voltage of 100 to 300 kV), it contributes to improvement in adhesion with the carbon film. In the present invention, the film thickness of the carbon film is not particularly limited, but is preferably in the range of 1 nm to 5 μm from the viewpoint of film durability.

In the mounting suction nozzle of the present invention, the carbon film formed on the surface of the intermediate layer film has a hardness (Hv) of 3000 Kg / mm ² or more, preferably 3500 Kg / mm ² or more. When the hardness is less than 3000 Kg / mm ² , when used as a suction nozzle for mounting, the suction surface wears out in a short time, and the reflected light (luminance) at the time of mounting the component increases. As a result, image recognition becomes impossible and component mounting Many mistakes occur.

(Examples 1-2, Comparative Examples 1-2)
Hereinafter, although this invention is demonstrated based on an Example, this invention is not limited to these Examples.

10% by weight of titanium dioxide with an average particle size of 0.07 μm is added to partially stabilized zirconia with an average crystal particle size of 1.0 μm containing 3 mol% of yttrium oxide, and an acrylic or ethylene vinyl acetate binder and wax are added thereto. Compound raw materials were prepared by adding the ingredients and kneading and drying. The compound material was injection molded under the conditions of a mold temperature of 40 ° C. and an extrusion temperature of 150 ° C. to obtain a nozzle-shaped molded product shown in FIG. The molded product was desorbed in the atmosphere at 450 to 900 ° C., and then fired in an inert gas containing argon as a main component at a temperature of 1100 ° C. to 1600 ° C. for 1 hour, resulting in an electric resistance of 10 ⁶ Ω. A partially stabilized zirconia nozzle containing oxygen deficient titanium oxide was prepared.

The adsorption surface of the obtained nozzle was irradiated with argon cluster ions having an average number of argon atoms of 1000 accelerated to 20 kV under the condition of 5 × 10 ¹⁶ atoms / cm ² to clean the surface. Argon cluster ion beam-assisted irradiation is performed by accelerating the argon cluster ions formed under the same conditions as in the case of surface cleaning at a voltage of 5 kV while vaporizing and evaporating chromium on the cleaned adsorption surface by magnetron sputtering. An intermediate layer film of 0.1 μm was formed. After formation of the intermediate layer film, hydrogen cluster fullerene as a carbon evaporation source is heated by a crucible to evaporate, and argon cluster ions formed under the same conditions as in the case of surface cleaning are accelerated at a voltage of 5 kV. Were used to form carbon films with different film thicknesses.

  The obtained mounting suction nozzle was subjected to the following durability test simulating an electronic component mounting machine, when no carbon film was formed (Comparative Example 2), and when the suction surface was subjected to high hardness treatment with an electron beam (Comparative Example 1). ) When the carbon film of the present invention was formed (Examples 1 and 2), the hardness, the wear state after the durability test and the wear amount were examined, and the results are summarized in Table 1.

In the durability test, the tip end adsorption surface of the nozzle produced by the above method was used as a measure of durability by measuring the wear state and the amount of wear when the high-temperature-resistant component was collided at high speed under the following conditions.
-Impact load value 5 [N]
・ Pushing amount 1.2 [mm]
・ Rotation speed 900 [rpm]
・ Number of collisions 25 million and 50 million [times]
・ Test temperature 23 ± 3 [℃]
-Collision material Transistor parts (For accuracy, replacement is performed 25 million times)

Moreover, the hardness of the carbon film was measured under the following conditions using a plate-type test piece produced under the same conditions, using an automatic clutch testing machine with an AE sensor (model: Micro Scratch Tester MST) manufactured by Nanotech Co., Ltd.
・ Test start load 0 [N]
・ Maximum load 30 [N]
・ Loading speed 30 [N / min]
・ Scratch needle speed 10 [mm / min]
・ Test distance 10 [mm]
・ Test temperature 25 ℃

  From the results shown in Table 1, the surface where the carbon film is not applied has a fast progress of wear, the tip surface is entirely worn, and the amount of wear is also increased. On the other hand, it is confirmed that the nozzle suction surface of the present invention with a carbon film is hardly progressing in wear and maintains a slight wear state, and the suction nozzle for mounting that mounts high heat resistant chip parts It turned out to be suitable as.

  The suction nozzle for mounting according to the present invention is excellent in wear resistance and mounting accuracy of chip parts, and also has semiconductivity as the chip parts have higher heat resistance and higher surface hardness. In this case, it is very suitable for mounting electronic parts, especially in the field of mounting high heat resistance parts due to the electrical equipment of transport machinery, because there are very few troubles such as electrostatic breakdown and blowout of parts. It can be used.

DESCRIPTION OF SYMBOLS 1; Electronic component mounting nozzle 2; Tip suction surface 3; Suction port 4; Cylindrical portion 5; Conical portion 6; Intermediate layer film 7; Carbon film 10; Electronic component mounting machine 11; CCD camera 15 Image analysis device

Claims (2)

In a suction nozzle for mounting formed by adding a conductive material as necessary to partially stabilized zirconia, at least the tip suction surface of the suction nozzle for mounting is made of chromium, tungsten, titanium, molybdenum and their carbides, oxides, An adsorption nozzle for mounting, wherein a carbon film having a hardness (Hv) of 3000 Kg / mm ² or more is formed through an intermediate layer film containing one or more selected from nitrides.   The mounting nozzle according to claim 1, wherein the carbon film is a hydrogen-free amorphous carbon film.

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