JP3207700B2 - Method of manufacturing field emission type electron source device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION This invention relates to a method of manufacturing a field-emission electron source device which emits electrons in a high electric field, producing the field emission electron source device comprising in particular an integrated cathode and gate electrode on a substrate About the method.

[0002]

2. Description of the Related Art In recent years, with the progress of microfabrication technology used in the field of integrated circuits or thin films, the technology of manufacturing a field emission electron source that emits electrons in a high electric field has been remarkable. 2. Description of the Related Art A field emission type electron source device having a field emission type cold cathode having a small structure has been manufactured. The field emission cold cathode of this type of electron source device is the most basic electron emission device among the main components constituting a triode type micro electron tube or micro electron gun.

Meanwhile, a field emission type electron source device including a large number of electron emission portions has been devised as a component such as a micro triode or a thin display element. The operation and manufacturing method of the field emission type electron source are as follows. , Stanford Research Institute
rch Institute). A. CA Spindt et al., Journal of Applied Physics (Journal of Applied Physics).
Applied Physics, Vol. 47, 12
No. 5248-5263 (December 1976). A. U.S. Pat. No. 4,307,507 to Spindt et al. F. Nos. 4,307,507 and 4,513,308 to HF Gray et al.

This device, ie, a field emission type electron source device, comprises a cold cathode which emits electrons according to the field emission principle,
A gate electrode as an electric field application electrode for applying a positive voltage to apply an electric field to the cold cathode to emit electrons.

[0005]

In these field emission type electron sources, the leakage current at the surface of the insulating layer due to contamination in the fabrication process in some of the fabricated electron emission portions is considered. The electron emitted from the cold cathode has many components that enter the gate electrode due to variations in the shape caused by the unevenness of the fabrication process, and a relatively large leak current flows between the cold cathode and the gate electrode. May flow. Due to these leak currents, there is a problem that the electron emission portion is destroyed by a temperature rise due to generation of Joule heat or plasma generated by gas release.

Further, in these field emission electron sources, the cold cathode is extremely sharpened in order to lower the operating voltage, so that the temperature at the tip end is likely to rise due to the Nottingham effect and Joule heat. The operating voltage is relatively low due to the variation in the shape of the tip of the cold cathode caused by the non-uniformity of the fabrication process, and there is an electron-emitting portion that can be broken at a relatively low operating voltage.

In a field emission type electron source including a large number of electron emission portions, if a part of the electron emission portions is broken, the cold cathode and the gate electrode are short-circuited in many cases, and the entire electron source functions. Will be gone.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-described problems, and reduces a leak current between a cold cathode and a gate electrode so as not to cause destruction in an electron emission portion. It is another object of the present invention to provide a method of manufacturing a field emission electron source device in which the emission current from the cold cathode is reduced so that the operating voltage does not break down, and the yield and the reliability are not reduced.

[0009]

[0010]

[0011]

[0012]

According to a first aspect of the present invention, there is provided a method of manufacturing a field emission type electron source device, comprising: forming a protruding portion for forming a cathode on a substrate made of a semiconductor or a metal; , On the substrate surface including the protruding part,
Forming an insulating layer by oxidizing, forming a resistive layer on a portion of the insulating layer excluding a tip end of a protruding portion, forming a gate electrode layer on the resistive layer, Removing the tip portion of the protruding portion to expose the tip portion of the cathode; and separating the portion of the gate electrode surrounding the tip portion of the cathode from other portions.

According to a second aspect of the present invention, there is provided a method of manufacturing a field emission type electron source device, comprising the steps of: forming a projecting portion for forming a cathode on a substrate made of a semiconductor or a metal; Forming an insulating layer on the surface of the substrate by oxidizing, forming a resistive layer on a portion of the insulating layer excluding a protruding portion, and a protruding portion on the resistive layer Forming a gate electrode layer in a portion excluding a portion surrounding the above, and removing a tip portion of a protruding portion of the insulating layer to expose a tip portion of the cathode.

[0014]

[0015]

[0016]

[0017]

[0018]

[0019]

In the method of manufacturing a field emission type electron source device according to claim 1 , a step of forming a resistive layer on a portion of the insulating layer excluding a tip of a protruding portion, and a step of forming a gate electrode layer on the resistive layer And the step of separating the portion surrounding the front end portion of the cathode of the gate electrode layer from the other portion, so that the second portion is formed on the resistance layer and constitutes each electron source. A field emission electron source device including one gate electrode portion and a second gate electrode portion constituting the entire gate electrode can be easily manufactured, in which individual electron emission portions are hardly damaged.

According to a second aspect of the present invention, there is provided a method for manufacturing a field emission type electron source device, wherein a resistive layer is formed on a portion of the insulating layer excluding a tip portion of the protruding portion; Forming a gate electrode layer in a portion excluding a portion surrounding the tip portion of
A resistance layer formed on the insulating layer and in the vicinity of the tip portion of the cathode, and a portion except for a portion surrounding the tip portion of the cathode on the resistance layer, including a gate electrode formed to extract electrons from the cathode, It is possible to easily manufacture a field emission type electron source device in which the electron emission portion is not easily broken.

[0021]

BRIEF DESCRIPTION OF THE DRAWINGS FIG.
Will be described with reference to the drawings.

The field emission type electron source device of the present embodiment is shown in FIG.
As shown in FIG. 1, a silicon substrate 11, a cold cathode 10, an insulating layer 12, a resistance layer 13, and an electron emission portion gate electrode 14
a and a common gate electrode 14b.

Here, an embodiment of a method for manufacturing a field emission type electron source according to the present invention will be described with reference to FIG.

First, as shown in FIG.
= N-type silicon substrate 11 of 0.01 to 0.02 Ω · cm
Is thermally oxidized to form a thermally oxidized silicon layer 15 having a thickness of 0.2 to 0.3 μm. Next, for example, a circular pattern is formed on the surface of the thermally oxidized silicon layer 15 using a resist, and the thermally oxidized silicon layer 15 is etched to form a circular thermally oxidized silicon mask as shown in FIG. 15a is formed.

Then, the thermal silicon oxide mask 15
2A, the surface of the silicon substrate 11 is isotropically etched by a dry etching method, and a projection 11a for forming the conical cold cathode 10 as shown in FIG. Formed on the surface of In this embodiment, the convex portion 11a has a conical shape.
However, the shape of the convex portion 11a for constructing is not limited to this. Further, the surface of the silicon substrate 11 on which the protrusions 11a are formed is thermally oxidized, as shown in FIG.
A thermally oxidized silicon layer 12a having a thickness of about 0.3 to 0.5 μm is grown. During this thermal oxidation, the surface of the projection 11a of the silicon substrate 11 is also thermally oxidized at the same time, and a conical cold cathode 10 is formed.

Then, the silicon substrate 11 including the cold cathode 10 is placed in a vacuum deposition apparatus, and as shown in FIG. 2E, while rotating the silicon substrate 11 about the perpendicular 16 of the cold cathode 10, Silicon which becomes the resistance layer 13 is vapor-deposited on the silicon substrate 11 from obliquely above indicated by an arrow A in the figure to form a resistance layer 13 having a thickness of about 0.1 to 0.5 μm from the protrusion 11a. The cold cathode 10 is deposited on the silicon dioxide layer 12a and the silicon dioxide mask 15a formed on the substrate 11 on the foot side of the tip of the cold cathode 10. Then, as shown in FIG. 2 (F), while rotating the silicon substrate 11 in the same manner as in the silicon deposition, the molybdenum constituting the gate electrode layer 14 is moved with respect to the silicon substrate 11 by an arrow A in the figure. A gate electrode layer 14 having a thickness of about 0.3 μm was deposited from obliquely above as shown in FIG.
It is deposited on the resistance layer 13.

Next, a silicon dioxide mask 15a unnecessary as an electron emission source and a part of the silicon dioxide layer 12a covering the tip of the cold cathode 10 are etched with an etching material comprising a mixed aqueous solution of hydrofluoric acid and ammonium fluoride. Then, the tip of the cold cathode 10 included in the silicon substrate 11 is exposed as shown in FIG. Thus, the insulating layer 12, the resistance layer 13, and the gate electrode layer 14 are formed so as to surround the tip of the cold cathode 10 and expose the tip of the cold cathode 10, and the cold cathode 1 of the gate electrode layer 14 is formed.
The surface near zero is formed so as to have the same height as the height of the tip of the cold cathode 10.

Finally, using a resist on the surface of the gate electrode layer 14, for example, a pattern cut out in the form of a donut is formed, and the gate electrode layer 14 is etched, as shown in FIG. It is separated into a donut-shaped electron emission portion gate electrode 14a and a common gate electrode 14b. By the above manufacturing method, the field emission type electron source device of the present invention shown in FIG. 2H and FIG. 1 is manufactured.

As shown in FIG. 1, the cold cathode 10 of this embodiment
Are formed so as to protrude conically on a silicon substrate 11 as a substrate electrode. An insulating layer 12 is formed on the foot of the cold cathode 10 included in the silicon substrate 11. The insulating layer 12 is formed by oxidizing the surface of the silicon substrate 11 forming a substrate electrode. On the insulating layer 12, a resistance layer 13 is formed. Further, a gate electrode layer 14 as an electric field application electrode to which a positive voltage is applied in order to emit electrons from the cold cathode 10 is laminated on the resistance layer 13. The gate electrode layer 14 includes an electron emission portion gate electrode 14a,
It is separated from the common gate electrode 14b. The electron emission portion gate electrode 14a is electrically connected to the common gate electrode 14b via the resistance layer 13.

If a current does not flow between the cold cathode 10 and the electron emitting portion get electrode 14a when a positive voltage is applied to the common gate electrode 14b, the electron emitting portion gate electrode 14a
Is the common gate electrode 14b
And the same potential as. However, when a leak current flows between the cold cathode 10 and the electron emission portion gate electrode 14a, a current flows between the electron emission portion gate electrode 14a and the common gate electrode 14b through the resistance layer 13, and Due to the voltage drop, the potential of the electron emission portion gate electrode 14a becomes lower than the potential of the common gate electrode 14b according to the magnitude of the current flowing through the resistance layer 13. As a result, the cold cathode 1
0 and the electric field applied between the electron emitting portion gate electrode 14a becomes small, and the cold cathode 10 and the electron emitting portion gate electrode 1
4a is small.

As described above, the resistance formed by the resistance layer 13 limits the leakage current between the cold cathode 10 and the electron emission portion gate electrode 14a, so that the electron emission portion is destroyed by the leak current. To prevent

The applicant of the present invention has a field emission type electron source device formed by the steps shown in FIGS. 2A to 2H and having a resistance layer 13, an electron emission portion gate electrode 14a and a common gate electrode 14b formed thereon. J and the resistance layer 13 formed by the steps shown in FIGS. 2A to 2H and omitting the steps shown in FIGS. 2E and 2H are not formed.
Further, the gate electrode layer 14 is formed by the
The anode current and the gate current were measured for the conventional field emission electron source device K which was not separated into the common gate electrode 14b and the common gate electrode 14b.

In each of the field emission type electron source devices J and K, the pitch of the electron emitting portions is 20 μm, and the number of the electron emitting portions is 1 × 10
There are ^four . The field emission type electron source devices J and K are both disposed in a vacuum vessel and 1 mm from the field emission type electron source device.
A stainless plate-shaped anode was placed at a distant position, and the measurement was performed at a voltage between the cathode and the anode of 200 V and a degree of vacuum of 1 × 10 ⁻⁹ Torr. Regarding the field emission type electron source device J, when the voltage between the cathode and the gate electrode is 90 V, the anode current 2
mA, the gate current was 1 μA or less, and breakdown occurred at a cathode-gate electrode voltage of 100 V. Thereafter, the anode current was 1 μA or less, and the gate current was 100 mA or more at a cathode-gate electrode voltage of 10 V. Regarding the field emission type electron source device K, when the voltage between the cathode and the gate electrode is 60 V, the anode current is 200 μA and the gate current is 5 μA, and breakdown occurs at the voltage between the cathode and the gate electrode 70 V. At a voltage of 10 V, the anode current was 1 μA or less, and the gate current was 100 mA or more.

Thus, the device J according to the invention is
It can be seen that the gate current is smaller than the device K of the conventional example, and the current emission capability and the breakdown voltage are excellent.

In this embodiment, the silicon substrate 11 is used as the substrate. However, the present invention is not limited to this. A substrate obtained by coating another semiconductor, metal, glass, or the like with a semiconductor or metal may be used. May be used.

Although the silicon dioxide layer 15 formed by thermal oxidation is used as an etching mask for the silicon substrate 11, the material and forming method of the etching mask are not limited to these, but may be varied depending on the type of the substrate and the etching method. An etching mask material may be used, or it may be formed by diffusion or deposition.

Further, the etching of the silicon substrate 11 is performed by dry etching, but may be performed by wet etching.

Although silicon formed by oblique rotation evaporation is used for the resistance layer 13, the material and formation method of the resistance layer are not limited to this, and another resistor may be used. 13 may be deposited by sputtering.

Further, molybdenum is used for the gate electrode layer 14. However, the present invention is not limited to this, and other metals, alloys, conductive oxides, and nitrides may be used.

Next, a second embodiment of the field emission type electron source device of the present invention will be described with reference to the drawings.

The field emission type electron source device of this embodiment is shown in FIG.
As shown in FIG. 1, the semiconductor device includes a silicon substrate 11, a cold cathode 10, an insulating layer 12, a resistance layer 13, and a gate electrode layer 14.

Here, an embodiment of a method of manufacturing a field emission type electron source according to the present invention will be described with reference to FIG.

First, as shown in FIG.
= N-type silicon substrate 11 of 0.01 to 0.02 Ω · cm
Is thermally oxidized to form a thermally oxidized silicon layer 15 having a thickness of 0.2 to 0.3 μm. Then, for example, a circular pattern is formed on the surface of the thermal silicon oxide layer 15 using a resist, and the thermal silicon oxide layer 15 is etched to form a circular thermal silicon oxide mask 15a as shown in FIG. Form.

Then, the thermal silicon oxide mask 15
4A, the surface of the silicon substrate 11 is isotropically etched by a dry etching method, and as shown in FIG. 11 is formed on the surface. In this embodiment, the convex portion 11a has a conical shape, but the shape of the convex portion 11a for forming the cold cathode 10 is not limited to this. Further, the surface of the silicon substrate 11 on which the protruding portions 11a are formed is thermally oxidized, and as shown in FIG.
Thermal silicon oxide layer 12a having a thickness of about 0.5 μm
Grow. During this thermal oxidation, the surface of the projection 11a of the silicon substrate 11 is also thermally oxidized at the same time, and a conical cold cathode 10 is formed.

Then, the silicon substrate 11 including the cold cathode 10 is placed in a vacuum evaporation apparatus, and as shown in FIG. 4E, while rotating the silicon substrate 11 about the perpendicular 16 of the cold cathode 10, Silicon which becomes the resistance layer 13 is vapor-deposited on the silicon substrate 11 from obliquely above indicated by an arrow A in the figure to form a resistance layer 13 having a thickness of about 0.1 to 0.5 μm from the protrusion 11a. The cold cathode 10 is deposited on the silicon dioxide layer 12a and the silicon dioxide mask 15a formed on the substrate 11 on the foot side of the tip of the cold cathode 10. Then, as shown in FIG. 4F, while rotating the silicon substrate 11, the molybdenum constituting the gate electrode layer 14 is moved with respect to the silicon substrate 11 by an arrow A as shown in FIG. The gate electrode layer 14 having a thickness of about 0.3 μm is deposited from obliquely above indicated by. However, during the molybdenum deposition,
The angle between the perpendicular 16 and the axis to be rotated is made smaller than that in the step shown in FIG. 4E, and the silicon dioxide layer 12a formed on the substrate 11 further on the foot side than the tip of the cold cathode 10 is formed. It is deposited on a resistance layer covering the silicon dioxide mask 15a.

Finally, an unnecessary silicon dioxide mask 15a as an electron emission source and a part of the silicon dioxide layer 12a covering the tip of the cold cathode 10 are etched with a mixed aqueous solution of hydrofluoric acid and ammonium fluoride. The silicon substrate 11 is removed as shown in FIG.
The tip of the cold cathode 10 is exposed. As a result, the insulating layer 12, the resistance layer 13, and the gate electrode layer 14 are formed so as to surround the tip of the cold cathode 10 and expose the tip of the cold cathode 10.
The surface near 0 is formed so as to have the same height as the height of the tip of the cold cathode 10.

According to the above manufacturing method, the field emission type electron source device of the present invention shown in FIGS.

As shown in FIG. 3, as shown in FIG.
Are formed so as to protrude conically on a silicon substrate 11 as a substrate electrode. An insulating layer 12 is formed on the foot of the cold cathode 10 included in the silicon substrate 11. The insulating layer 12 is formed by oxidizing the surface of the silicon substrate 11 forming a substrate electrode. On the insulating layer 12, a resistance layer 13 is formed. Further, on the resistance layer 13, a gate electrode layer 14 as an electric field application electrode to which a positive voltage is applied in order to emit electrons from the cold cathode 10 is further provided at the tip of the cold cathode 10 than the resistance layer 13. It is laminated on the foot side.

If a current does not flow between the cold cathode 10 and the gate electrode 14 when a positive voltage is applied to the gate electrode 14, the portion of the resistive layer 13 close to the tip of the cold cathode 10 will remain for a while. After that, the potential becomes the same as that of the gate electrode 14. However, when a leak current flows between the cold cathode 10 and the gate electrode 14, the gate electrode 14 and the cold cathode 1
0, the voltage drop in the resistance layer 13 causes the resistance layer 13
The potential of the portion near the tip of the cold cathode 10 becomes lower than the potential of the electrode 14 in accordance with the magnitude of the current flowing through the resistance layer 13. As a result, the electric field applied to the cold cathode 10 decreases, and the leakage current between the cold cathode 10 and the gate electrode 14 decreases.

As described above, the resistance formed by the resistance layer 13 limits the leakage current between the cold cathode 10 and the gate electrode 14, so that the electron emission portion is prevented from being destroyed by the leakage current. .

The present applicant has proposed a resistive layer 13 and a gate electrode 1 formed by the steps shown in FIGS. 4 (A) to 4 (G).
The anode current and the gate current were measured for the field emission type electron source device L on which No. 4 was formed. In the field emission type electron source device L, the pitch of the electron emission portions is 20 μm, and the number of the electron emission portions is 1 × 10 ⁴ . The field emission type electron source device L is disposed in a vacuum vessel and is 1 mm from the field emission type electron source device.
A stainless plate-shaped anode was placed at a distant position, and the measurement was performed at a voltage between the cathode and the anode of 200 V and a degree of vacuum of 1 × 10 ⁻⁹ Torr.

In the field emission type electron source device L, when the voltage between the cathode and the gate electrode is 95 V, the anode current is 2 mA and the gate current is 1 μA or less.
Breakdown occurs at 10 V. Thereafter, at a voltage between the cathode and the gate electrode of 10 V, an anode current of 1 μA or less and a gate current of 100 m
A or more.

As described above, the device L according to the present embodiment has a smaller gate current than the conventional device K, and
It can be seen that the current emission capability and breakdown voltage are also excellent.

In the above embodiment, the silicon substrate 11 is used as the substrate. However, the present invention is not limited to this. A substrate obtained by coating another semiconductor, metal, glass, or the like with a semiconductor or metal may be used. May be used.

Although the silicon dioxide layer 15 formed by thermal oxidation is used as an etching mask for the silicon substrate 11, the material and forming method of the etching mask are not limited to these, but may be varied according to the type of the substrate and the etching method. An etching mask material may be used, or it may be formed by diffusion or deposition.

Further, the etching of the silicon substrate 11 is performed by dry etching, but may be performed by wet etching.

[0057]

Although molybdenum is used for the gate electrode layer 14, the present invention is not limited to this, and other metals, alloys, conductive oxides, and nitrides may be used.

Next, a third embodiment of the field emission type electron source device of the present invention will be described with reference to the drawings.

In the field emission type electron source device of this embodiment, the resistance layer 13 formed by the process shown in FIG. 2E in the first embodiment is made of silicon germanium and deposited by sputtering. A field emission type electron source device M was manufactured in exactly the same manner as above.

The field emission type electron source device M has a pitch of electron emission portions of 20 μm and the number of electron emission portions × 10 ⁴ .
The field emission type electron source device M is disposed in a vacuum vessel, a stainless steel plate-shaped anode is disposed at a position 1 mm away from the field emission type electron source device, and a cathode-anode voltage 200
V, the measurement was performed at a degree of vacuum of 1 × 10 ⁻⁹ Torr. Regarding the field emission type electron source device M, when the irradiation light intensity to the field emission type electron source device M is 1 nW / cm ² or less, the negative electrode
When the voltage between the gate electrodes is 90 V, the anode current is 2 mA and the gate current is 1 μA or less.
Destruction occurs at 0 V, and thereafter, an anode current of 1 μA or less and a gate current of 100 mA at a cathode-gate electrode voltage of 10 V.
That was all.

The wavelength 6 applied to the field emission type electron source device M
Irradiation light intensity 1 mW / cm by 32.8 nm laser light
^{In 2} , the cathode-gate electrode voltage was 90 V, the anode current was 2 mA, the gate current was 1 μA or less, and breakdown occurred at a cathode-gate electrode voltage of 100 V. The current was 1 μA or less, and the gate current was 100 mA or more.

Further, with respect to the field emission type electron source device J described in the first embodiment, the irradiation light intensity of the laser beam having a wavelength of 632.8 nm to the field emission type electron source device 1 m was 1 m.
At W / cm ² , when the voltage between the cathode and the gate electrode is 70 V, the anode current is 250 μA and the gate current is 1 μA or less, and breakdown occurs at the voltage between the cathode and the gate electrode of 85 V. And anode current 1μ
A or less, and the gate current was 100 mA or more.

As described above, the field emission type electron source device M according to the third embodiment has a lower gate current, current emission capability and breakdown voltage due to light irradiation than the conventional field emission type electron source device J. It can be seen that the performance degradation is small and excellent.

[0065] In the above embodiment, although the resistive layer 13 using silicon germanium by sputtering, the materials and the forming method of the resistance layer is not limited to this, or, the resistance layer 13 It may be deposited by vapor deposition.

[0066]

[0067]

[0068]

[0069]

[0070]

[0071]

[0072]

[0073]

Effects of the Invention] According to the method of manufacturing the field emission-type electron source according to claim 1, formed on the resistive layer, the first gate electrode and the overall gate electrode portion of which constitutes an individual electron source A field emission type electron source device that includes the second gate electrode portion and hardly causes destruction of individual electron emission portions can be easily manufactured at a high yield.

According to the method of manufacturing a field emission type electron source device of the second aspect , the resistance layer formed on the insulating layer and near the tip of the cathode and the tip of the cathode on the resistance layer are surrounded. A field-emission electron source device that includes a gate electrode formed to extract electrons from the cathode in a portion other than the portion and in which the electron-emitting portion is not easily broken can be easily manufactured with a high yield.

[Brief description of the drawings]

FIG. 1 is a perspective view showing one embodiment of a field emission type electron source device according to the present invention.

FIG. 2 is a cross-sectional view illustrating a method for manufacturing a field emission electron source device according to the present invention.

FIG. 3 is a perspective view showing one embodiment of a field emission type electron source device according to the present invention.

FIG. 4 is a cross-sectional view illustrating a method of manufacturing a field emission electron source device according to the present invention.

[Explanation of symbols]

 10 Cold cathode 11 Silicon substrate 12 Insulating layer 13 Resistive layer 14 Gate electrode layer 14a Electron emission gate electrode 14b Common gate electrode 15 Silicon dioxide layer 15a Silicon dioxide mask

Continuation of the front page (56) References JP-A-6-84478 (JP, A) JP-A-8-31347 (JP, A) JP-A-8-236013 (JP, A) (58) Fields investigated (Int .Cl. ⁷ , DB name) H01J 9/02

Claims (2)

(57) [Claims] 1. A method of manufacturing a field emission type electron source device for emitting electrons in a high electric field, wherein a cathode is formed on a substrate made of a semiconductor or a metal.
Forming a protruding portion to be oxidized on the surface of the substrate including the protruding portion.
Forming an insulating layer, and a portion of the insulating layer excluding a tip portion of the protruding portion.
Forming a resistive layer, forming a gate electrode layer on the resistive layer, and removing a tip of the protruding portion of the insulating layer to form a shadow.
Exposing a tip portion of the pole; and a portion of the gate electrode surrounding the tip portion of the cathode.
A field emission type electron source device comprising the steps of : 2. A method of manufacturing a field emission type electron source device for emitting electrons in a high electric field, comprising a semiconductor or a metal.
The protruding part that will form the cathode on the substrate
Forming and oxidizing on the substrate surface including the protruding portions.
Forming an insulating layer, and a portion of the insulating layer excluding a tip portion of the protruding portion.
Forming a resistive layer, and enclosing a tip portion of the protruding portion on the resistive layer.
Forming a gate electrode layer on the portion excluding the above, and removing the tip of the protruding portion of the insulating layer to remove the shadow.
Method of manufacturing a field emission electron source device including the step of exposing the tip portion of the pole.