JP3207161B2 - Micro electromechanical system switch - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an RF switch.
More particularly, it relates to a monolithically integrated micro-electro-mechanical system (MEMS) switch,
Comprises a rigid beam, a circuit board, and at least one electrical contact, wherein a metal pin rotatably connected to the circuit board is monolithically formed, defining a pivot point for the beam forming the seesaw, the seesaw. Are electrostatically actuated to rotate between a contact open position and a contact closed position, eliminating beam bending and extending switch life.

[0002]

TECHNICAL BACKGROUND RF switches are generally known in the art. Examples of such switches are described in U.S. Pat. 5,578,976. Such RF switches are used in various microwave and millimeter wave products, such as tunable preamplifiers and frequency synthesizers, as well as in automotive products. FIG. 1 shows a known RF micro-electro-mechanical system (MEMS) switch. As shown in the figure, the MEMS generally denoted by reference numeral 20 is formed on a circuit board 22 and has a post 24 at one end. One end of the flexible cantilever beam 26 is connected to the post 24. The cantilever beam 26 is adapted to support an electrical contact 28 at one end, the electrical contact 28 comprising
It is adjusted to match the corresponding contact 29 supported on the circuit board 22. The RF input signal is adapted to be connected to a contact 29 forming an RF input port, while the contact 28 forms an RF output port.

The switch 20 is designed to operate electrostatically. A ground plate 32 is formed on the circuit board 22, and a field plate 34 is formed on the cantilever beam 26. The ground plate 32 is configured to be grounded, and the field plate 34 is selectively connected to a DC voltage source. In operation, when no voltage is applied to the field plate 34, the contact 28
9 and the contact open state shown generally in FIG. 1 is established. When an appropriate DC voltage is applied to the field plate 34,
The cantilever beam 34 is displaced by electrostatic forces, causing the electrical contacts 28 to mate with the electrical contacts 29, and the RF
Allow input signals to be electrically connected to the RF output port. When the voltage is removed from the field plate 34, the cantilever arm 20 is moved by the restoring force of the cantilever beam 26 as shown in FIG.
Return to the static position shown in.

[0004] US Pat. No. 5,552,924 also discloses a micro-electro-mechanical (MEM) device formed on a circuit board. Posts are formed on the circuit board to support the extended beam. The extended beam is supported at the center and electrical contacts are formed at both ends of the beam. The structure operates electrostatically. More specifically, when a DC voltage is applied to the field plate on the extended beam, a static electrical force is created, causing the beam to twist. Unfortunately, the above arrangement requires that the cantilever bend each time the switch is actuated. Such bending shortens switch life and reduces switch reliability.
These known RF switches have other problems, such as relatively high insertion loss, which are unacceptable in certain products, such as RF switching products. Specifically, U.S. Pat. A cantilever beam made of silicon dioxide as disclosed in US Pat. No. 5,578,976;
U.S. Pat. No. 5,552,994 discloses that a composite silicon metal alloy (Al: Ti: S
i) is used. Unfortunately, the use of such materials in the beam results in relatively high insertion loss and reduced RF switch sensitivity.

As described above, such an RF switch has been used in a wide range of products such as a frequency synthesizer. Conventional semiconductor RF switches are relatively large and bulky (ie, 40 × 16 × 16 arrays).
0 cubic inches), and the package size of a system using such an RF switch becomes relatively large. Micromachined RF switches have been developed as such, for example, US Pat.
578,976 and 5,552,994. Thanks to these micromachined RF switches, the package size has been significantly reduced (ie,
1 cubic inch). However, manufacturing techniques for such micromachined RF switches are known HBTs.
So far, it has been incompatible with HEMT processing technology or CMOS processing technology, and thus has prevented the incorporation of the RF switch into HEMT and HBT devices or CMOS devices.

[0006]

SUMMARY OF THE INVENTION It is an object of the present invention to solve various problems in the prior art. It is another object of the present invention to provide an RF switch suitable for manufacturing with known electroforming techniques. It is yet another object of the present invention to provide an RF switch with improved mechanical reliability over known RF switches. Yet another object of the present invention is to provide an RF switch suitable for being monolithically integrated into other integrated circuits, such as CMOS, HET, HEMT microwave monolithic integrated circuits (MMICs). In summary, the present invention provides
An RF switch formed as a micro-electro-mechanical system (MEMS), the switch being configurable in an array to form a micro-electro-mechanical switch array (MEMSA). The MEMS is formed on a circuit board. A pivot point is defined by a pin rotatably supported by the circuit board. Generally, the center of the rigid beam or transmission line is placed on the pins to form a seesaw configuration. The use of a rigid beam eliminates the torsion and bending forces on the beam, which reduce reliability. The switch is intended to be monolithically integrated into the MMIC, for example, an HBT and HEMT, and is separated from such circuitry by a suitable polymer layer, such as polyimide, to protect the MMIC during the fabrication of the RF switch. . To reduce insertion loss, the beam is entirely formed of metal, which increases the sensitivity of the switch and allows the switch to be used in RF switching products. By making the beam or transmission line entirely of metal, the switch has lower insertion loss than other switches using a silicon dioxide composite silicon metal beam.

[0007]

BRIEF DESCRIPTION OF THE DRAWINGS These and other objects of the present invention can be readily understood from the following specification and the accompanying drawings. The present invention
Micro-electro-mechanical system (ME
The invention relates to an RF switch as a (MS) switch, which is manufactured by a known electroforming technique, with which a microelectromechanical switch array (MEMSA) is made. As described in more detail below,
The switch is configured to increase switch life and improve mechanical reliability. In addition, the switch is formed on a polymer layer or circuit board, which polymer layer or circuit board can be used to protect a microwave monolithic integrated circuit (MMIC). Can be.

One embodiment of the RF switch of the present invention is shown in FIGS.
Indicated by 0. The switch 50 is formed on a circuit board 52. HEMT dispersion amplifier and HBT-T
In the case of a product in which the switch 50 is integrated in a microwave monolithic integrated circuit, such as a TL drive circuit, the circuit board 52 is made of polyimide or BPDA-PDA dupont p-type.
It is formed from a polymer called phenylenebiphenyltetracarboximide. The polymer is formed as a layer directly above the MMIC and protects the MMIC during the RF switch manufacturing process. The low dielectric constant of polyimide (ie, ε =
2) provides, for example, a circuit board having relatively low loss for the RF transmission line. As best shown in FIG.
The switch 50 and the MMIC 49 may be coaxially interconnected via a hole 47, which allows a transition from one level to another while maintaining RF impedance and providing high insulation.

An important aspect of the present invention relates to the fact that the beam 54 is rigid and is adapted to rotate about a pin 58 (FIG. 2). The pins 58 are rotatably mounted to the circuit board 52 by, for example, metal collars 60 forming a seesaw-type arrangement. Beam 5
Eliminating the bending or twisting of the 4 reduces beam fatigue and improves the overall reliability of the switch as well as the switch life. The arrangement of the RF switch of the present invention may be various. For example, FIG. 3 shows a single-pole double-throw switch. However, the principles of the present invention are equally applicable to other switch arrangements. The single pole double throw switch 50 has a metal contact 6 made of, for example, gold Au on the side of the beam 54 facing the circuit board 52.
0 and 62 are formed. These contacts 60, 62 correspond to respective corresponding contacts 6 formed on circuit board 52.
4, 66 are combined.

[0010] The RF switch 50 operates by electrostatic force. In particular, a pair of electrical contacts 68, 70
May be formed on the circuit board 52. These contacts 6
8, 70 are turned on and off by the corresponding field plates 69,
Controlled by the electrostatic forces resulting from the appropriate DC voltage applied to 71 (FIG. 3a). In particular, the field plates 69, 7
1 is combined with contacts 68 and 71 to form a parallel plate capacitor. Therefore, when a DC potential is applied to the field plates 69, 71, the contacts 68, 70 and the metal beam 54
An electrostatic attraction and a repulsive force occur between them. The direction of rotation of the beam 54 depends on the polarity of the DC voltage applied to the field plates 69, 71. In the case of a single-pole, double-throw switch 50, the contacts 72 may be formed on the circuit board 52 so that the pins 5 made of an electrically conductive material (i.e., nickel)
8 and beam 54 will be in electrical contact. Contact 7
2 may be used as the RF input port 61 (FIG. 3)
a) On the other hand, the contact pairs 60 and 64 and the contact pairs 62 and 66 may be used as the RF output ports 63 and 65, respectively. In particular, if contact 62 is in electrical contact with electrical contact 66, the RF input signal applied to contact 72 will exit electrical contacts 62 and 66. Alternatively, contact 6
When 0 is in electrical contact with contact 64, the RF input signal exits contacts 60 and 64.

The beam 54 may be entirely metal to reduce insertion loss as well as improve switch sensitivity. In particular, the beam 54 may be formed of nickel electroplated Ni, which is performed at a lower temperature than many semiconductor processes. The all-metal beam 54 not only reduces insertion loss with respect to known silicon dioxide or composite silicon metal beams, but such an arrangement also improves the third order cutoff position to provide an extended dynamic range. In the case of the switch arrangement shown in FIGS.
Forms an RF input port. FIGS. 5 a and 5 b show an alternative arrangement, wherein the RF switch, generally indicated by reference numeral 70, includes a circuit board 72, a beam 74, and pins 76. In this embodiment, electrical contacts 78, 80 are formed at each end of the circuit board 72 to mate with corresponding contacts 82, 84 formed at the opposite end of the beam 74. . In the latter arrangement, the circuit board 76
A contact 80 formed at one end of the R.sub.1 forms an RF input port, while a contact 77 electronically coupled to beam 74
Form the F output port.

Using electrostatic force, the beam 74 is used as described above.
To rotate. In particular, contact 78 forms an off output port and is grounded. A pair of contacts 86 and 88 formed on the circuit board 72 cooperate with the pair of field plates 87 and 89 to form the above-described parallel plate capacitor. In particular, when the beam 74 rotates counterclockwise, the beam 74 is grounded in order to make the electrostatic potential of the beam 74 zero. Otherwise, the switch behavior may be unstable due to unknown electrostatic force caused by the operation of the switch plate. Alternatively, if switch 70 rotates clockwise, beam 74 is not grounded and the RF input port is directly connected to beam 74, where contact 84 forms an output contact. The operation of the switches 50 and 70
4, 74 and the field plate. The force between the field plate and the beam is a function of the charge Q and the electric field E. One field plate is maintained at the same potential as the beam, resulting in zero force. Other field plates include
The charge determined by Equation 1 gives a certain potential difference to beam 74. (1) Q = C · V = ε ₀ · (wl / t) · V where W and l are the width and length of the beam, t is the distance between the contacts, and V is the voltage. The static electric field is determined by Equation 2. (2) E = V / t Since the electrostatic force is the product of the charge Q and the static electric field E, the force is given by Equation 3. (3) F = Q · E = ε 0 · When balancing the ^{(wl / t 2) · V} 2 structure, the electrostatic force is also not disturbed in any opposing force due to the static induction or acceleration induced. Thus, when a voltage is applied to one plate, the structure will tilt in a direction to close the end contact closest to the actuation plate and open the other end contact.

The time required for the switch to move from one position to another is determined by the electrostatic force, the mass of the beam, and the distance traveled. Assuming that the beam moves linearly and the electrostatic force is constant, even if the beam rotates only about 0.006 radians around the pivot and the electrostatic force is about twice as large between start-up and full closure under constant voltage However, according to such an analysis, the switching delay is limited by simply considering the switching delay calculated by adding the switching voltage rise time assuming that the weakest electrostatic force is applied throughout the entire time. The actual switching time may be shorter.

The switching delay of the exemplary arrangement shown in FIG. (4) √ (2mXF) where m = dLwa where X is the distance the beam must move (eg 3 microns) and d is the beam density (eg 8.9 Kg /
m ³ ), l is the length of the beam (eg 900 microns),
w is the beam width (eg, 150 microns) and a is the beam thickness (eg, 8 microns). In the case of these specific numerical values, the mass of the beam is 9.6 × 10 ⁻⁹ Kg. Choosing a voltage of 10 volts, t of 4.5 microns, and l of 200 microns, 1.3 × 10 ⁻⁶ between the beam and the plate.
Newton's electrostatic force is generated and switching time is 20
0 microseconds or less. If faster switching speed is required, the voltage applied to the plate should be 10
From 35 to 35 volts, the electrostatic force can be increased by a factor of about 10. A mechanical design that reduces the mass by a factor of three except for the inactive part of the beam is also considered. It is also possible to reduce the nickel thickness of the beam to optimize the switching speed. 2 vertical spacing
It is conceivable to reduce it by a factor of one, which increases the electrostatic force by a factor of four, reduces the distance traveled by a factor of two and reduces the switching time to about two microseconds.

The frequency response of the switch (ie, RF
Operating frequency) is a function of the physical dimensions of the switch.
In general, the smaller the size of the switch, the higher the operable frequency of the switch due to related factors. The switch according to the invention has a minimum dimension of about 10.times.50 microns, that is to say 10 times smaller than known RF switches having an RF operating frequency of about 40 GHz. For example, regarding the switches shown in FIGS.
8 and 9 show insertion loss, return loss and insulation up to 0 GHz.
Shown in From these figures, it can be seen that switch 50 has a relatively low insertion loss, a relatively high return loss at about 2 GHz, and about 45 d.
It can be seen that b shows the insulating property. To improve the insulation, two switches can be connected in series to provide insulation up to 90 db.

The insulation of the two switches 50, 70 is compared to FIGS. 10a, 10b, respectively. The switch 70 is formed as a short bar switch, and one end of the beam is used to short the input of the output transmission line, i.e., by designing the gap spacing to make the width of the transmission line appropriate, the switch 70 10b, 50 dB insulation at 2 GHz is possible, and two switches can be connected in series to provide insulation up to 100 db. Switch 5
An alternative arrangement of 0, 70 is shown in FIGS. In the embodiment shown in FIG. 6, a switch 51 is used to connect to a direct transmission line, while a switch 53 is used to connect two transmission lines spaced apart in parallel. The switch 51 has two switch states, open and closed. In the open state, the two transmission lines are not connected, and in the closed state, the two transmission lines are connected. The switch 53 has three switch states: fully open, one closed, or both closed. In this embodiment, the beam connecting the two transmission lines is not only a rotation around the pins, but also a straight line, in order to connect or disconnect at least one of the transmission lines connected to the beam coming from the RF signal. Vertical movement is also possible.

FIGS. 12-15 illustrate in detail the steps of manufacturing a MEMS according to the present invention. As mentioned above, M according to the invention
The EMS is integrated in a microwave integrated circuit (MMIC) 53 and is formed directly on the polymer circuit board 52 on the MMIC. Alternatively, the MEMS may be manufactured as a stand-alone device. In FIG. 12, a layer of conductor metal 100 is formed on circuit board layer 52. As the conductor metal, for example, 300 chromium (C
r) and 2,000 gold (Au) may be deposited by evaporation. The conductor metal layer 100 is masked by conventional photolithography techniques to form contacts and field plates in various arrangements. FIG. 12C shows a specific arrangement of the contacts including the contacts 101 and 103, the pivot contact 105, and the pair of field plates 107 and 109. As shown
Like the field plates 107 and 109, the contacts 101 and 105
Are a plurality of input / output ports 111, 113, 115, 11
7 (FIG. 12b). Contact 103 is directly connected to contact 105. Other arrangements are possible. A photoresist is applied to the conductor metal layer 100 and exposed through a mask, for example, as shown in FIGS. 3b and 5b, to define contacts, conductors and field plates. Once the conductor pattern is determined by photolithography technology, the conductor metal layer 100 is etched by, for example, wet etching,
Form conductors, contacts and field plates.

As noted above, the MEMS is formed in a seesaw configuration and has at least one pin rotatably collared to a metal beam, pivot, and circuit board. Like the collar, the pivot must use a number of spacers. A layer 102 of, for example, 1.2-1.5 μm copper (Cu) is formed on top of the conductor, for example by vapor deposition, as shown in FIG. 12c. The copper layer 102 (shown as copper 1 in FIG. 12c) is used to form spacers for the pivot, as well as the collar, which will be described in detail below. A photoresist layer 104 is applied over the copper layer 102, as shown in particular in FIG. The contacts and pivots as well as the collars are defined by conventional photolithographic techniques. After defining the contacts, collars and pivots, the copper layer 102 is etched as shown in FIG. 12e, for example by a conventional wet etch. In addition, the photoresist layer 104 is removed. A second spacer is formed as shown in FIG. 13a. In particular, a second layer of, for example, 1.2 μm copper (copper 2) 112 is formed on top of the structure, for example by evaporation, as shown in FIG. 12e. Once the second layer of copper 112 is deposited, the pivot and color base are determined as shown in FIGS. 13b, 13c. In particular, a photoresist layer 114 is exposed over the copper layer 112 by conventional photolithographic techniques to define a pivot and a color base as shown in FIG. 13b. Subsequently, as shown in FIG. 13c, the copper II layer 112 is etched to define a pivot and a color base.

In FIG. 13d, the top contacts are shown in FIGS.
e. In particular, a photoresist layer of, for example, chlorobenzine photoresist 116 is added to FIG.
Put on the structure as shown in. Photoresist layer 11
6 is masked and exposed by conventional photolithography techniques to form a pair of top gold contacts 11 as shown in FIG.
8, 120 are determined. In particular, once the contact area is defined as shown in FIG. 13d, for example, 5,000 gold (Au) is deposited on the structure to form gold contacts 118,120.

After forming the gold contacts 118, 120, an open copper layer is formed as shown in FIGS. 13f and 13g. In particular,
A layer of photoresist 122 is applied to the structure as shown in FIG. 13e and exposed by conventional photolithographic techniques to define an open copper layer 124. The open copper layer 124 is, for example, as shown in FIG.
Deposit 2,000-5,000 copper on the structure shown in 3f by removing the photoresist. The open copper is later removed in a step that allows the formed pin and pivot to rotate. The beam and plate are formed through a layer of photoresist (not shown) applied over the structure and shaped by conventional photolithographic techniques to define the beam and field plate. Thereafter, the structure is plated with, for example, 4 μm nickel (Ni) to form a beam and plate to form a first nickel layer (nickel I) 128 (FIG. 14a). In addition, the above-mentioned photoresist layer is removed.

A cross-sectional view of the switch after application of the first nickel layer 128 is shown in FIG. As shown in FIG. 14a,
Top contacts 118, 120 are deposited on the underside of the beam forming nickel layer 128. FIG. 14a for simplicity
Now the copper layers 102, 112 have been removed and the spacing between the contacts 118 and 120 formed on the underside of the beam and the conductors formed on the circuit board 52 is illustrated. FIG.
b is a sectional view of the collar portion. As shown in FIG. 15b, a pair of pins 127, 129 are shown proximate the pivot. Pins 127 and 129 are connected to copper layer 10
2 are formed on top. Two colors 131, 133
(FIG. 15b) shows a copper layer (copper I) above pins 127,129.
II, copper IV) 130, 132 plated and pin 1
Formed on top of 27 and 129 (FIGS.
d). The collars 131, 133 may be shaped by conventional photolithographic techniques. The first layer is 5,0
The second layer may be formed by plating 2-3 mm copper Cu from the structure.

As shown in FIGS. 15a-c, a second layer of nickel (Nickel II) 134 is formed on top of the structure, which reinforces the beam and enhances the collar 131, as shown in FIG. 15a. 133 is formed to rotatably support and capture the pins 127 and 129 with respect to the circuit board 52. After the collars 131, 133 have been formed over the pins 127 and 129, the copper is etched to produce the structure shown in FIGS. 15b and 15c. Once the copper has been etched, pins 127 and 129 are free to rotate as shown in FIG. 15b. FIG. 15c shows the pivot after etching the copper. Many modifications and variations of the present invention are apparently possible in light of the above teachings. It is, therefore, to be understood that the invention may be practiced other than as specifically described above and within the scope of the appended claims.

[Brief description of the drawings]

FIG. 1 is an elevation view of a known RF switch.

FIG. 2 is an elevation view of an RF switch according to the present invention.

FIG. 3a is a view similar to FIG. 2, but further illustrating the field plate.

FIG. 3b is a plan view of the RF switch of FIGS. 2 and 3a.

FIG. 4 is a perspective view of an RF switch according to the present invention made on an MMIC.

FIG. 5a is an elevational view of an alternative embodiment of the RF switch according to the present invention.

FIG. 5b is a plan view of the RF switch of FIG. 5a.

FIG. 6 is a plan view of an alternative embodiment of the RF switch of FIG. 5 according to the present invention.

FIG. 7 is a plan view of another alternative embodiment of the RF switch of FIG. 3 according to the present invention.

FIG. 8 is a graph showing the insertion loss and return loss dB of a typical switch with the switch in the ON position as a function of frequency GHz.

FIG. 9 is a graph illustrating the insulation performance dB of a representative switch with the switch in the OFF position as a function of frequency GHz.

FIG. 10a is a graph of the insulation performance of the switch of FIG.

FIG. 10b is a graph of the insulation performance of the switch of FIG.

FIG. 11 is an elevation view of a representative contact configuration for an RF switch according to the present invention.

FIG. 12a shows a step-by-step process of manufacturing a switch according to the present invention.

FIG. 12b illustrates a step-by-step process for manufacturing a switch according to the present invention.

FIG. 12c shows a step-by-step process of manufacturing a switch according to the present invention.

FIG. 12d illustrates a step-by-step process of manufacturing a switch according to the present invention.

FIG. 12e illustrates a step-by-step process of manufacturing a switch according to the present invention.

FIG. 13a is a diagram showing step by step a process of manufacturing a switch according to the present invention.

FIG. 13b shows a step-by-step process of manufacturing a switch according to the invention.

FIG. 13c illustrates a step-by-step process for manufacturing a switch according to the present invention.

FIG. 13d illustrates a step-by-step process of manufacturing a switch according to the present invention.

FIG. 13e illustrates a step-by-step process for manufacturing a switch according to the present invention.

FIG. 13f is a view illustrating stepwise a manufacturing process of the switch according to the present invention;

FIG. 13g is a diagram showing step by step the manufacturing process of the switch according to the present invention.

FIG. 14a illustrates a step-by-step process of manufacturing a switch according to the present invention.

FIG. 14b illustrates a step-by-step process of manufacturing a switch according to the present invention.

FIG. 14c illustrates a step-by-step process for manufacturing a switch according to the present invention.

FIG. 14d illustrates a step-by-step process of manufacturing a switch according to the present invention.

FIG. 15a shows a step-by-step process of manufacturing a switch according to the invention.

FIG. 15b shows a step-by-step process of manufacturing a switch according to the invention.

FIG. 15c illustrates a step-by-step process for manufacturing a switch according to the present invention.

[Explanation of symbols]

 47 hole 49 microwave monolithic integrated circuit 50 RF switch 52 circuit board 54 beam 58 pin 60, 62 contact 69, 71 field plate

────────────────────────────────────────────────── ─── Continued on the front page (72) Inventor George W. McKever USA 90277 Redondo Beach North Polina Avenue 801 (72) Inventor Alfred E. Lee USA California 90505 Torrance McAfee Road 4612 (56) References Special JP-A-9-17300 (JP, A) JP-A-8-235997 (JP, A) JP-A-4-306520 (JP, A) JP-A-8-227041 (JP, A) JP-A-7-29548 ( JP, Y2) Jikgyo 7-31480 (JP, Y2) (58) Fields investigated (Int. Cl. ⁷ , DB name) H01H 59/00

Claims (21)

(57) [Claims] 1. An RF switch comprising: a circuit board; and a pin rotatably supported by the circuit board to form a pivot point, wherein the pin is freely rotatable with respect to the circuit board. Including at least one collar attached to the circuit board to capture the pin, including a beam carried by the pin, the beam configured to be rotatable between a first position and a second position; The circuit board and at least one pair of electrical contacts carried by the beam, wherein a predetermined force is generated to create an electrostatic force for rotating the beam between the first position and the second position as a function of an applied voltage. An RF switch comprising at least one field plate for receiving a voltage. 2. The RF switch according to claim 1, wherein said beam is a rigid beam. 3. The RF switch according to claim 1, wherein said beams are all formed of metal. 4. The RF switch according to claim 3, wherein the metal is nickel formed by a low-temperature electroplating process. 5. The RF switch according to claim 1, wherein a pair of electrical contacts are formed on opposite sides of the pin to form an RF output port. 6. The RF switch according to claim 5, wherein a field plate is formed next to each pair of said electrical contacts. 7. The RF switch of claim 6, further comprising a metal contact that contacts said pin forming an RF input port. 8. The RF switch according to claim 1, wherein the circuit board is a predetermined polymer, glass or semiconductor layer. 9. The RF switch according to claim 8, wherein the polymer is a polyimide. 10. The RF switch has at least two pairs of electrical contacts formed thereon, one pair of electrical contacts being used to connect an RF signal to the beam, and another pair of electrical contacts connecting the beam. The RF switch according to claim 5, wherein the RF switch is used for grounding. 11. The RF switch according to claim 1, wherein the RF switch is formed monolithically. 12. A monolithic microphone forming a first layer.
A RF integrated circuit and an RF switch, wherein the RF switch includes a circuit board layer formed on the first layer, and includes a pin supported by the circuit board layer to form a pivot point; The pins are freely rotatable with respect to the circuit board layer, and are attached to the circuit board layers to capture the pins and rotate the pins freely with respect to the circuit board. And at least one pair supported by the circuit board and the beam, the beam including a beam carried by the pin, the beam being rotatable between a first position and a second position. At least one field for receiving a predetermined voltage to create an electrostatic force for rotating the beam between the first position and the second position in the form of a function of an applied voltage. Integrated RF switch including a rate, and wherein the. 13. The apparatus of claim 12, further comprising a hole formed in the circuit board layer to enable a connection between the monolithic microwave integrated circuit and the RF switch. An integrated RF switch as described. 14. The integrated RF of claim 12, wherein said monolithic microwave integrated circuit comprises a circuit formed of heterojunction bipolar transistors.
switch. 15. The integrated RF switch of claim 12, wherein said monolithic microwave integrated circuit comprises a circuit of a high electron mobility transistor . 16. The integrated RF switch according to claim 12, wherein said beam is rigid. 17. The integrated RF switch according to claim 12, wherein said beams are all formed of metal. 18. The integrated RF switch according to claim 12, wherein said circuit board layer is polyimide. 19. A circuit board comprising: (a) providing a circuit board; (b) forming a contact on the circuit board; and (c) the circuit being rotatable relative to the circuit board. Forming pins on a substrate; and (d) contacting the circuit board to capture the pins.
Forming at least one collar to be mounted ; (e) forming a beam and arranging the beam on the pins such that the beam is rotatably supported relative to the circuit board; ) a method of forming a micro electromechanical switch, characterized in that it comprises the steps of forming said contacts adapted to mate with contacts on the circuit board on the beams. 20. The method of claim 19, wherein the micro-electromechanical switch is formed on top of an existing monolithic microwave integrated circuit.
Method of forming a micro electromechanical switch 21. The micro-electro-mechanical switch according to claim 19, wherein the circuit board is a polymer.
A method of forming a switch.