CN100403476C - Single-pole double throw membrane switch of RF microelectronic machinery and its mfg method - Google Patents
Single-pole double throw membrane switch of RF microelectronic machinery and its mfg method Download PDFInfo
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- CN100403476C CN100403476C CNB2004100647465A CN200410064746A CN100403476C CN 100403476 C CN100403476 C CN 100403476C CN B2004100647465 A CNB2004100647465 A CN B2004100647465A CN 200410064746 A CN200410064746 A CN 200410064746A CN 100403476 C CN100403476 C CN 100403476C
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Abstract
The present invention relates to an RF microelectronic mechanical single-pole double-throw membrane switch and a manufacturing method thereof, which belongs to the field of microelectronic mechanical systems. A microwave T type head composed of microstrip lines is arranged in each single-pole double-throw membrane switch and comprises a signal line used as an input end for high frequency signals and two branched signal lines connected with the signal line to form a symmetrical T-shaped structure, and the two branched signal lines are connected with the same single-pole single-throw membrane switch. The sum of the effective length b of each branched signal line in the microwave T type head and the length a from the branched signal line to the mid point of a coplanar waveguide signal line is one forth of the wavelength of an input high frequency signal. A control circuit controls the switching on and the switching off of two single-pole single-throw membrane switches to realize the function of single pole double throw. The present invention solves the problems of high threshold voltage of an MEMS membrane switch and interference of control voltage on transmission signals, and thereby, the purposes of low threshold voltage, low isolation degree, low insertion loss and good linearity are realized. The present invention has the advantages of favorable material performance, high reliability, high repeatability and low cost.
Description
Technical field
The invention relates to a kind of radio-frequency (RF) microelectronic system's single-pole double throw membrane switch and manufacture method thereof, belong to microelectromechanical systems (MEMS) technical field.
Background technology
For example FET and pin diode switch are compared with traditional semiconductor switch, owing to structurally eliminated metal-semiconductor junction and PN junction, the MEMS membrane switch has lot of advantages, for example: eliminated contact resistance and the diffusion resistance in the ohmic contact, therefore reduced the resistance loss of device greatly; It is long-pending to have extremely low third order intermodulation, thereby has reduced the harmonic component and the intermodulation component of switch significantly, and the linearity is very good; Have higher switching capacity ratio, under the general size, the ON/OFF capacity ratio of mems switch is about 20-100; The RF mems switch of static driven has extremely low dc power, and typical transient power consumption is 10nJ; It almost can be produced on any substrate.But the use to this kind switch only rests on the single-pole single-throw(SPST stage, because technical being difficult to broken through, the progress of the MEMS membrane switch of single-pole double throw is little.Because need a lot of single-pole double-throw switch (SPDT)s in actual the use, so the MEMS membrane switch can't be brought into play comprehensively with respect to the plurality of advantages of conventional semiconductors switch.
Summary of the invention
Technical problem: the purpose of this invention is to provide a kind of single-pole double throw membrane switch of RF microelectronic machinery and manufacture method thereof, use this structure and can solve and alleviate threshold voltage height in the mems switch, the direct-current control voltage problem that generation is disturbed to high-frequency signal, the co-planar waveguide loss is big, and can utilize the plurality of advantages of single-pole single-throw(SPST membrane switch to realize the single-pole double throw function.MEMS single-pole double throw membrane switch of the present invention has reliability height, advantage that cost is low.
Technical scheme: the downside of single-pole double throw membrane switch of RF microelectronic machinery of the present invention is provided with a microwave T shape head that is made of microstrip line, the lower end of this microwave T shape head is a holding wire as the high-frequency signal input, both sides are two and are attached thereto the branch signal line that constitutes symmetrical T shape structure that a single-pole single-throw(SPST membrane switch is arranged on the every branch signal line, and symmetry is continuous with it.
The structure of single-pole single-throw(SPST membrane switch is: be provided with a co-planar waveguide holding wire in the centre of substrate top surface, be positioned at co-planar waveguide holding wire both sides and be respectively equipped with a DC driven electrode, be positioned at the DC driven electrode outside and be respectively equipped with a co-planar waveguide ground wire, insulating medium layer covers the stage casing of co-planar waveguide holding wire and DC driven electrode, being provided with flat film and two brace summers that support this flat film that are across on the co-planar waveguide holding wire above the insulating medium layer, between wherein flat film and the insulating medium layer one deck air gap layer.The effective length b of every branch signal line and branch signal line are 1/4 of input high-frequency signal wavelength to the summation of the length a of co-planar waveguide holding wire mid point in the microwave T shape head.
Employing is made based on GaAs MMIC technology, realizes that the concrete technological process of the single-pole single-throw(SPST membrane switch in the single-pole double throw membrane switch of the present invention is as follows:
A, preparing substrate: select for use GaAs to return the throwing sheet, clean with dense HCL and ammoniacal liquor, whether the alignment mark that will splash back the stepping mask aligner of throwing sheet simultaneously is clear;
B, deposit and photoetching form the metal stratum of a microwave T shape microstrip line: on gallium arsenide substrate, the AuGeNi/Au layer of the sputter 800/300/2200A of elder generation, in the excusing from death generator, peel off this metal level then, make to guarantee formation layer of metal stratum below microwave T shape head;
C, deposit one deck silicon nitride layer: with the SiN dielectric layer of pecvd process growth 1000A on an exposed substrate and a T shape metal stratum;
The holding wire of the bridge pier of d, deposit and photoetching co-planar waveguide holding wire and ground wire, brace summer, DC driven electrode and a microwave T shape microstrip line: on gallium arsenide substrate, the sputter AuGeNi/Au of elder generation layer, peel off this metal level in excusing from death in the generator then, generate the holding wire of bridge pier, DC driven electrode and microwave T shape head of co-planar waveguide, the brace summer of switch at last;
E, growth insulating medium layer: on co-planar waveguide holding wire and DC driven electrode, with pecvd process growth SiN insulating medium layer, the width of insulating barrier is 120um below the flat film, and length is determined by the length of switch membrane;
F, deposit and photoetching sacrifice layer: coating polyimide sacrifice layer and photoetching, the thickness of polyimide sacrificial layer has determined the thickness of switch pole plate air gap layer, the rotating speed that this can be by regulating photoresist spinner and the concentration of polyimide solution change the thickness of sacrifice layer, the photoetching polyimide sacrificial layer only keeps the sacrifice layer under the switch membrane;
G, the flat film of sputter and photoetching: the down payment Ti/Au/Ti that sputter is used to electroplate on polyimide layer;
H, photoetching are also corroded the Ti/Au/Ti bottom layer, form etch pit;
I, electrogilding: electrogilding in 55 cyano group solution;
J, releasing sacrificial layer: remove residual photoresist with acetone earlier,, and, form the switch membrane structure that suspends with the absolute ethyl alcohol dehydration then with the polyimide sacrificial layer under the developing solution dissolution switch membrane.
The operation principle of each single-pole single-throw(SPST membrane switch is: when not applying voltage or apply 0 voltage on the DC driven electrode, the flat film of switch is across co-planar waveguide holding wire two ends, and be supported on two ground wires of co-planar waveguide by two brace summers, because (the thickness sum that comprises air gap layer and dielectric layer is bigger for the distance of flat film and co-planar waveguide holding wire, so the capacitance between them is very little, therefore high-frequency signal can be almost insusceptibly by co-planar waveguide, switch conduction; When the value that applies direct voltage on the DC driven electrode is increased to certain value when (this value is called the threshold voltage of switch), because electrostatic attraction effect, flat film is bent downwardly, and inhale and be incorporated on the insulating medium layer, this moment is because flat film is very little to the distance (only being the thickness of insulating medium layer) of co-planar waveguide holding wire, so it is very big that the capacitance between them becomes, high-frequency signal then is coupled to ground, so switch turn-offs.
The operation principle of this single-pole double-throw switch (SPDT) of the present invention is: microwave signal is from the high-frequency signal input input of a microwave T shape microstrip line, and be divided into two-way by two branch lines, on the DC driven electrode of two single-pole single-throw switch (SPST)s, (for example apply different voltage by control circuit, can on the DC driven electrode of a single-pole single-throw switch (SPST), apply certain direct voltage greater than threshold voltage, and on the DC driven electrode of other switch, apply 0 voltage) make a switch conduction and another switch turn-offs, then the tributary signal of switch conduction by and the tributary signal that turn-offs at switch ends, thereby realized the single-pole double throw function.
Distinguish whether to be the standard of this structure as follows:
(a) a microwave T shape header structure that is made of microstrip line is arranged in the single-pole double-throw switch (SPDT), this microwave T shape header structure comprises a high-frequency signal input microstrip line and two branch signal lines that link to each other with a single-pole single-throw switch (SPST) separately;
(b) each single-pole single-throw switch (SPST) respectively has a DC driven electrode in co-planar waveguide holding wire both sides, comes opening or closing of control switch in order to apply direct voltage;
(c) the effective length b of every branch signal line and branch's microstrip line are 1/4 of input high-frequency signal wavelength to the summation of co-planar waveguide holding wire mid point length a in the microwave T shape head.
The structure that satisfies above several conditions promptly should be considered as this single-pole double throw membrane switch structure.
Beneficial effect: this single-pole double throw membrane switch of the present invention has following advantage:
1. owing in single-pole single-throw switch (SPST), used two extra DC driven electrodes, can apply direct-current control voltage with these two DC driven electrodes of mistake and come opening or closing of control switch, cause interference when having avoided in the switch in the past applying direct-current control voltage, therefore can well reduce the nonlinear distortion of switch transmitting high-frequency signal by the co-planar waveguide holding wire;
2. be equally because the introducing of two above-mentioned extra DC driven electrodes, make direct-current control voltage can put on the both sides of the flat film of switch, flat like this film can be more uniform stressed, can be left behind easilier, therefore can reduce the threshold voltage of switch effectively by the direct-current control voltage that is applied:
3. because microwave T shape head is made of microstrip line, compare with adopting the co-planar waveguide holding wire, it has reduced the microwave signal excess loss;
4. because the total length of the microwave signal line from a microwave T shape bifurcation to single single-pole double-throw switch (SPDT) film below is 1/4 of institute's transmitting high-frequency signal wavelength, when conducting in two switches and another are closed, the switch of cutting out promptly is equivalent to one 1/4 wavelength short-circuiting device, therefore it does not exert an influence to the signal that transmits in another switch, and promptly signal can pass through from another switch fully;
5. simultaneously, because switch of the present invention is the micro-electronic mechanical skill manufacturing, it is a passive device, therefore compares with traditional semiconductor switch, has to insert the advantage that loss is little, isolation is high and power loss is little.
Description of drawings
Fig. 1 is the floor map of single-pole single-throw(SPST membrane switch,
Fig. 2 is the generalized section of single-pole single-throw(SPST membrane switch,
Fig. 3 is the floor map of single-pole double throw membrane switch,
Fig. 4 is the schematic diagram of A-A ' section among Fig. 3,
Fig. 5 is insertion damage curve figure of the present invention,
Fig. 6 is the isolation and the return loss plot figure of single membrane switch among the present invention.
Have among the above figure: substrate 1, single-pole single-throw(SPST membrane switch 10, microwave T shape 11, signal input part holding wire 111, branch signal line 112,113, co-planar waveguide holding wire 21, co-planar waveguide ground wire 22, DC driven electrode 3, insulating medium layer 4, flat film 5, brace summer 6, bridge pier 61, air gap layer 7, the metal stratum 8 of microstrip line, dielectric layer 9, the effective length b of branch signal line 112,113, branch signal line 113 is to the length a of co-planar waveguide holding wire 21 mid points.
Embodiment
For single-pole double throw membrane switch of RF microelectronic machinery structure of the present invention, we have designed complete implementation, and have tested out characteristic preferably by verification experimental verification.This single-pole double throw membrane switch of RF microelectronic machinery organization plan is specific as follows:
A microwave T shape that is made of microstrip line 11 is arranged in the single-pole double throw membrane switch of RF microelectronic machinery of the present invention, it comprises holding wire 111 and the two branch signal lines 112 and 113 that are attached thereto the symmetrical T shape structure of formation as the high-frequency signal input, and a single-pole single-throw(SPST membrane switch 10 is arranged on the every branch signal line, and symmetry is continuous with it.By a control circuit control two single-pole single-throw switch (SPST)s the DC driven electrode open or close, thereby realized the single-pole double throw function.Wherein, each single-pole single-throw(SPST membrane switch structure 10 comprises: substrate 1, co-planar waveguide holding wire 21, two DC driven electrodes 3 that are positioned at the holding wire both sides, two co-planar waveguide ground wires 22 that are positioned at the DC driven electrode outside, the insulating medium layer 4 that covers a co-planar waveguide holding wire and a DC driven electrode part, flat film 5 and two brace summers 6 that support these flat films that are across on the co-planar waveguide holding wire are one deck air gap layer 7 between wherein flat film 5 and the insulating medium layer 4.Every branch signal line 122 of microwave T shape or 123 length b and branch signal line are 1/4 of input high-frequency signal wavelength to the summation of the length a of co-planar waveguide holding wire mid point among the present invention.
Realize comprising the implementation method of microstrip line microwave T shape header structure and the implementation method of single-pole single-throw(SPST membrane switch in the concrete grammar of above-mentioned construction of switch, adopt based on GaAs MMIC technology and make device.
The concrete technological process that wherein realizes the single-pole single-throw(SPST membrane switch in the single-pole double throw membrane switch of the present invention is as follows:
A, preparing substrate 1: select for use GaAs to return the throwing sheet, clean with dense HCL and ammoniacal liquor, whether the alignment mark that will splash back the stepping mask aligner of throwing sheet simultaneously is clear;
B, deposit and photoetching form the metal stratum 8 of a microwave T shape microstrip line: on gallium arsenide substrate, the AuGeNi/Au layer of the sputter 800/300/2200A of elder generation, in the excusing from death generator, peel off this metal level then, make to guarantee formation layer of metal stratum below microwave T shape head;
C, deposit one deck silicon nitride layer 9: with the SiN dielectric layer of pecvd process growth 1000A on an exposed substrate and a T shape metal stratum;
The bridge pier 61 of d, deposit and photoetching co-planar waveguide holding wire and ground wire 21 and 22, brace summer 6,
The holding wire 111,112,113 of a DC driven electrode 3 and a microwave T shape microstrip line: on gallium arsenide substrate, the AuGeNi/Au layer of the sputter 800/300/2200A of elder generation, peel off this metal level in excusing from death in the generator then, generate the holding wire of bridge pier, DC driven electrode and microwave T shape head of co-planar waveguide, the brace summer of switch at last;
E, growth insulating medium layer 4: on co-planar waveguide holding wire 21 and DC driven electrode 3, flat film 5 belows are with the SiN insulating medium layer of pecvd process growth 1000A.The width of insulating barrier is 120um, and length is determined by the length of switch membrane;
F, deposit and photoetching sacrifice layer: apply 2um polyimide sacrificial layer and photoetching.The thickness of polyimide sacrificial layer has determined the thickness of switch pole plate air gap layer 7, and the rotating speed that this can be by regulating photoresist spinner and the concentration of polyimide solution change the thickness of sacrifice layer.The photoetching polyimide sacrificial layer only keeps the sacrifice layer under the switch membrane;
G, the flat film 5 of sputter and photoetching: the down payment Ti/Au/Ti=500/1500/300A that sputter is used to electroplate on polyimide layer;
H, photoetching are also corroded the Ti/Au/Ti bottom layer, form etch pit, and etch pit is of a size of 8 * 8um;
I, electrogilding: electrogilding in 55 cyano group solution, electrogilding layer thickness are 1.4um;
J, releasing sacrificial layer: remove residual photoresist with acetone earlier,, and, form the switch membrane structure that suspends with the absolute ethyl alcohol dehydration then with the polyimide sacrificial layer under the developing solution dissolution switch membrane.
In addition, note also some problems in the whole technical proposal, comprising: the size design of a microwave T shape microstrip line, thickness of dielectric layers design, it is related to the loss problem of high-frequency signal; The drive electrode very little design of ground roll jig together, it all has crucial meaning to switch high frequency characteristics and threshold voltage; The selection of sacrifice layer, this has determined to discharge the degree of roughness of rear surface and the capacitance of OFF state, is related to the isolation of switch; The design of control circuit, it is related to the synchronous of two switch conductions and closure; The top crown film can use flat film, also can use folded beam or tee girder and other forms, with the threshold voltage of further reduction switch.
Make a general survey of the technical process of whole this single-pole double throw membrane switch of realization, wherein without any special material is not introduced any complicated special technology yet, and is compatible mutually with GaAs MMIC technology fully.Therefore, the single-pole double throw membrane switch structure among application the present invention is easy to realize and it can be realized direct current, exchange and separate, and improves the characteristic of switch.
Claims (3)
1. single-pole double throw membrane switch of RF microelectronic machinery, it is characterized in that: the downside at this single-pole double throw membrane switch is provided with a microwave T shape head (11) that is made of microstrip line, the lower end of this microwave T shape head (11) is a holding wire (111) as the high-frequency signal input, both sides are two and are attached thereto the branch signal line (112,113) that constitutes symmetrical T shape structure that a single-pole single-throw(SPST membrane switch (10) is arranged on the every branch signal line (112,113), and symmetry is continuous with it; The structure of single-pole single-throw(SPST membrane switch (10) is: the centre at substrate (1) upper surface is provided with a co-planar waveguide holding wire (21), be positioned at co-planar waveguide holding wire (21) both sides and be respectively equipped with a DC driven electrode (3), be positioned at DC driven electrode (3) outside and be respectively equipped with a co-planar waveguide ground wire (22), insulating medium layer (4) covers the stage casing of co-planar waveguide holding wire (21) and DC driven electrode (3), being provided with flat film (5) and two brace summers (6) that support this flat film that are across on the co-planar waveguide holding wire (21) in the top of insulating medium layer (4), is one deck air gap layer (7) between wherein flat film (5) and the insulating medium layer (4).
2. single-pole double throw membrane switch of RF microelectronic machinery according to claim 1 is characterized in that: the effective length b of every branch signal line (112,113) and branch signal line (113) are 1/4 of input high-frequency signal wavelength to the summation of the length a of co-planar waveguide holding wire (21) mid point in the microwave T shape head (11).
3. the manufacture method of a single-pole double throw membrane switch of RF microelectronic machinery as claimed in claim 1 is characterized in that adopting based on GaAs MMIC technology and makes, and concrete technological process is as follows:
A, preparing substrate (1): select for use GaAs to return the throwing sheet, clean with dense HCL and ammoniacal liquor, whether the alignment mark that will splash back the stepping mask aligner of throwing sheet simultaneously is clear;
B, deposit and photoetching form the metal stratum (8) of a microwave T shape microstrip line: on gallium arsenide substrate, the AuGeNi/Au layer of the sputter 800/300/2200A of elder generation, in the excusing from death generator, peel off this metal level then, make to guarantee formation layer of metal stratum below microwave T shape head;
C, deposit one deck silicon nitride layer (9): with the SiN dielectric layer of pecvd process growth 1000A on an exposed substrate and a T shape metal stratum;
The holding wire (111,112,113) of the bridge pier (61) of d, deposit and photoetching co-planar waveguide holding wire and ground wire (21 and 22), brace summer (6), DC driven electrode (3) and a microwave T shape microstrip line: on gallium arsenide substrate, the sputter AuGeNi/Au of elder generation layer, peel off this metal level in excusing from death in the generator then, generate the holding wire of bridge pier, DC driven electrode and microwave T shape head of co-planar waveguide, the brace summer of switch at last;
E, growth insulating medium layer (4): on co-planar waveguide holding wire (21) and DC driven electrode (3), flat film (5) below is with pecvd process growth SiN insulating medium layer;
F, deposit and photoetching sacrifice layer: coating polyimide sacrifice layer and photoetching, the thickness of polyimide sacrificial layer has determined the thickness of switch pole plate air gap layer (7), the rotating speed that this can be by regulating photoresist spinner and the concentration of polyimide solution change the thickness of sacrifice layer, the photoetching polyimide sacrificial layer only keeps the sacrifice layer under the switch membrane;
G, the flat film of sputter (5) and photoetching: the down payment Ti/Au/Ti that sputter is used to electroplate on polyimide layer;
H, photoetching are also corroded the Ti/Au/Ti bottom layer, form etch pit;
I, electrogilding: electrogilding in 55 cyano group solution;
J, releasing sacrificial layer: remove residual photoresist with acetone earlier,, and, form the switch membrane structure that suspends with the absolute ethyl alcohol dehydration then with the polyimide sacrificial layer under the developing solution dissolution switch membrane.
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| CNB2004100647465A CN100403476C (en) | 2004-09-27 | 2004-09-27 | Single-pole double throw membrane switch of RF microelectronic machinery and its mfg method |
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| CNB2004100647465A CN100403476C (en) | 2004-09-27 | 2004-09-27 | Single-pole double throw membrane switch of RF microelectronic machinery and its mfg method |
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| CN100403476C true CN100403476C (en) | 2008-07-16 |
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Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US7554222B2 (en) * | 2007-11-01 | 2009-06-30 | General Electric Company | Micro-electromechanical system based switching |
| CN101369679B (en) * | 2008-10-10 | 2012-05-23 | 东南大学 | Microelectronic mechanical either-or microwave switch and method of manufacturing the same |
| CN104183425B (en) * | 2014-08-29 | 2016-03-02 | 电子科技大学 | A kind of RF MEMS single-pole double-throw switch (SPDT) |
| EP3254294B1 (en) | 2015-02-05 | 2023-05-24 | Qorvo US, Inc. | Dvc utilizing mims in the anchor |
| CN114447543B (en) * | 2020-10-30 | 2023-09-12 | 京东方科技集团股份有限公司 | Phase shifter and antenna device |
| CN114447544B (en) | 2020-10-30 | 2023-06-30 | 京东方科技集团股份有限公司 | Phase shifter and antenna device |
| WO2023206154A1 (en) * | 2022-04-27 | 2023-11-02 | 京东方科技集团股份有限公司 | Mems switch and preparation method therefor, and electronic device |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5619061A (en) * | 1993-07-27 | 1997-04-08 | Texas Instruments Incorporated | Micromechanical microwave switching |
| EP0892419A2 (en) * | 1997-07-18 | 1999-01-20 | TRW Inc. | Micro electro-mechanical system (MEMS) switch |
| CN1311158A (en) * | 2001-03-23 | 2001-09-05 | 中国科学院上海冶金研究所 | Radio frequency microelectronic mechanical single knife commutator and its producing method |
| US6440767B1 (en) * | 2001-01-23 | 2002-08-27 | Hrl Laboratories, Llc | Monolithic single pole double throw RF MEMS switch |
| US6580337B1 (en) * | 1999-07-19 | 2003-06-17 | California Institute Of Technology | MEMS switch |
| US6657525B1 (en) * | 2002-05-31 | 2003-12-02 | Northrop Grumman Corporation | Microelectromechanical RF switch |
| US6713695B2 (en) * | 2002-03-06 | 2004-03-30 | Murata Manufacturing Co., Ltd. | RF microelectromechanical systems device |
| EP1432000A1 (en) * | 2002-12-16 | 2004-06-23 | Northrop Grumman Corporation | Millimeter wave switches |
| CN1529336A (en) * | 2003-09-29 | 2004-09-15 | 中国科学院上海微系统与信息技术研究 | Miniature torsional single-pole double-throw radio-frequency switch structure and manufacture method thereof |
| CN2729890Y (en) * | 2004-09-27 | 2005-09-28 | 东南大学 | RF microelectronic mechanical single-pole double-throw film switch |
-
2004
- 2004-09-27 CN CNB2004100647465A patent/CN100403476C/en not_active Expired - Fee Related
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5619061A (en) * | 1993-07-27 | 1997-04-08 | Texas Instruments Incorporated | Micromechanical microwave switching |
| EP0892419A2 (en) * | 1997-07-18 | 1999-01-20 | TRW Inc. | Micro electro-mechanical system (MEMS) switch |
| US6580337B1 (en) * | 1999-07-19 | 2003-06-17 | California Institute Of Technology | MEMS switch |
| US6440767B1 (en) * | 2001-01-23 | 2002-08-27 | Hrl Laboratories, Llc | Monolithic single pole double throw RF MEMS switch |
| CN1311158A (en) * | 2001-03-23 | 2001-09-05 | 中国科学院上海冶金研究所 | Radio frequency microelectronic mechanical single knife commutator and its producing method |
| US6713695B2 (en) * | 2002-03-06 | 2004-03-30 | Murata Manufacturing Co., Ltd. | RF microelectromechanical systems device |
| US6657525B1 (en) * | 2002-05-31 | 2003-12-02 | Northrop Grumman Corporation | Microelectromechanical RF switch |
| EP1432000A1 (en) * | 2002-12-16 | 2004-06-23 | Northrop Grumman Corporation | Millimeter wave switches |
| CN1529336A (en) * | 2003-09-29 | 2004-09-15 | 中国科学院上海微系统与信息技术研究 | Miniature torsional single-pole double-throw radio-frequency switch structure and manufacture method thereof |
| CN2729890Y (en) * | 2004-09-27 | 2005-09-28 | 东南大学 | RF microelectronic mechanical single-pole double-throw film switch |
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