JP3194159B2 - Semiconductor device and method of manufacturing the same - Google Patents
Semiconductor device and method of manufacturing the sameInfo
- Publication number
- JP3194159B2 JP3194159B2 JP12547492A JP12547492A JP3194159B2 JP 3194159 B2 JP3194159 B2 JP 3194159B2 JP 12547492 A JP12547492 A JP 12547492A JP 12547492 A JP12547492 A JP 12547492A JP 3194159 B2 JP3194159 B2 JP 3194159B2
- Authority
- JP
- Japan
- Prior art keywords
- sealing material
- semiconductor chip
- circuit board
- viscosity
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83194—Lateral distribution of the layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83909—Post-treatment of the layer connector or bonding area
- H01L2224/83951—Forming additional members, e.g. for reinforcing, fillet sealant
Landscapes
- Wire Bonding (AREA)
- Die Bonding (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
【０００１】[0001]
【産業上の利用分野】この発明は半導体装置およびその
製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device and a method for manufacturing the same.
【０００２】[0002]
【従来の技術】半導体チップを回路基板上に実装する場
合、例えば図４（イ）、（ロ）に示すように、フリップ
チップボンディング等により半導体チップ１の電極２を
回路基板３上の接続電極４に半田バンプ５を介して接続
することにより、半導体チップ１を回路基板３上に搭載
し、この後、外周雰囲気からの汚染や破損から半導体チ
ップ１を保護するために、ディスペンサー等の射出器
（図示せず）を用いてエポキシ系等の熱硬化性樹脂から
なる封止材６を半導体チップ１と回路基板３との間およ
び半導体チップ１の周囲に設けている。この場合、封止
材６として粘性率が５００００〜１０００００ｃｐ程度
と高い樹脂を用いると、半導体チップ１と回路基板３と
の間隔が極めて小さい関係から、半導体チップ１と回路
基板３との間にある程度までしか入り込ませることがで
きず、つまり半導体チップ１の底面中央部と回路基板３
との間には入り込ませることができず、このためこの部
分に空間が残存し、実装強度が低下することになる。そ
こで、従来では、封止材６として粘性率が１０００〜１
００００ｃｐ程度と低い樹脂を用いている。2. Description of the Related Art When a semiconductor chip is mounted on a circuit board, the electrodes 2 of the semiconductor chip 1 are connected to the connection electrodes on the circuit board 3 by flip chip bonding or the like, for example, as shown in FIGS. The semiconductor chip 1 is mounted on the circuit board 3 by connecting the semiconductor chip 1 to the semiconductor chip 1 via the solder bumps 5, and thereafter, an injector such as a dispenser is used to protect the semiconductor chip 1 from contamination or damage from the outer atmosphere. A sealing material 6 made of a thermosetting resin such as an epoxy resin is provided between the semiconductor chip 1 and the circuit board 3 and around the semiconductor chip 1 using a not-shown resin. In this case, if a resin having a high viscosity of about 50,000 to 100,000 cp is used as the sealing material 6, the distance between the semiconductor chip 1 and the circuit board 3 is reduced to some extent because the distance between the semiconductor chip 1 and the circuit board 3 is extremely small. The semiconductor chip 1 and the circuit board 3
Cannot be inserted between them, so that a space remains in this portion and the mounting strength is reduced. Therefore, conventionally, the viscosity of the sealing material 6 is 1000-1.
A resin as low as about 0000 cp is used.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、従来の
このような半導体装置では、封止材６の粘性率が１００
０〜１００００ｃｐ程度と低いので、流動性が大きく、
このため封止材６が半導体チップ１の搭載エリアから周
囲に大きく食み出し、半導体チップ１の実質的な実装面
積が大きくなり、半導体チップ１を複数個実装する場合
における高密度実装の妨げになるという問題があった。
この発明の目的は、実装強度を低下することなく、半導
体チップの実質的な実装面積を可及的に小さくすること
のできる半導体装置およびその製造方法を提供すること
にある。However, in such a conventional semiconductor device, the viscosity of the sealing material 6 is 100%.
Since it is as low as about 0-10000 cp, the fluidity is large,
For this reason, the sealing material 6 protrudes largely from the mounting area of the semiconductor chip 1 to the periphery, and the substantial mounting area of the semiconductor chip 1 increases, which prevents high-density mounting when a plurality of semiconductor chips 1 are mounted. There was a problem of becoming.
An object of the present invention is to provide a semiconductor device and a method of manufacturing the same, which can reduce the substantial mounting area of a semiconductor chip as much as possible without reducing the mounting strength.
【０００４】[0004]
【課題を解決するための手段】請求項１記載の発明は、
回路基板上にフリップチップボンディング等により搭載
された半導体チップの底面外周部と前記回路基板との間
に粘性率の高い樹脂からなる外部封止材を設け、該外部
封止材の内側での前記半導体チップと前記回路基板との
間に粘性率の低い樹脂からなる内部封止材を設けたもの
である。請求項３記載の発明は、回路基板上にフリップ
チップボンディング等により搭載された半導体チップの
底面外周部と前記回路基板との間に粘性率の高い樹脂か
らなる外部封止材を複数の開口部を残して設け、該外部
封止材の内側での前記半導体チップと前記回路基板との
間に前記開口部から粘性率の低い樹脂からなる内部封止
材を充填するようにしたものである。According to the first aspect of the present invention,
An external sealing material made of a resin having a high viscosity is provided between an outer peripheral portion of a bottom surface of the semiconductor chip mounted on the circuit board by flip chip bonding or the like and the circuit board, and the external sealing material is provided inside the external sealing material. An internal sealing material made of a resin having a low viscosity is provided between the semiconductor chip and the circuit board. According to a third aspect of the present invention, an external sealing material made of a resin having a high viscosity is provided between the outer peripheral portion of the bottom surface of the semiconductor chip mounted on the circuit board by flip chip bonding and the circuit board and the plurality of openings. And the space between the semiconductor chip and the circuit board inside the external sealing material is filled with an internal sealing material made of a resin having a low viscosity from the opening.
【０００５】[0005]
【作用】この発明によれば、粘性率の高い樹脂からなる
外部封止材を半導体チップの底面中央部と回路基板との
間に入り込ませることができなくても、この部分に粘性
率の低い樹脂からなる内部封止材を入り込ませることが
でき、したがって実装強度が低下しないようにすること
ができ、しかも外部封止材が半導体チップの搭載エリア
から周囲に大きく食み出さないようにすることができる
上、この外部封止材の内側に内部封止材を設けているの
で、半導体チップの実質的な実装面積を可及的に小さく
することができる。According to the present invention, even if an external encapsulant made of a resin having a high viscosity cannot be inserted between the central portion of the bottom surface of the semiconductor chip and the circuit board, the portion having a low viscosity is not present in this portion. The internal sealing material made of resin can be inserted, so that the mounting strength does not decrease, and the external sealing material does not protrude greatly from the mounting area of the semiconductor chip to the periphery. In addition, since the internal sealing material is provided inside the external sealing material, the substantial mounting area of the semiconductor chip can be reduced as much as possible.
【０００６】[0006]
【実施例】図１〜図３はそれぞれこの発明の一実施例に
おける半導体装置の各製造工程を示したものである。そ
こで、これらの図を順に参照しながら、半導体装置の構
造についてその製造方法と併せ説明する。1 to 3 show respective steps of manufacturing a semiconductor device according to an embodiment of the present invention. Therefore, the structure of the semiconductor device will be described together with its manufacturing method with reference to these drawings in order.
【０００７】まず、図１（イ）、（ロ）に示すように、
フリップチップボンディング等により半導体チップ１１
の電極１２を回路基板１３上の接続電極１４に半田バン
プ１５を介して接続することにより、半導体チップ１１
を回路基板１３上に搭載する。次に、図２（イ）、
（ロ）に示すように、ディスペンサー等の射出器（図示
せず）を用いて射出量を調整しながら粘性率が５０００
０〜１０００００ｃｐ程度と高いエポキシ系等の熱硬化
性樹脂からなる外部封止材１６を半導体チップ１１の底
面外周部と回路基板１３との間に２つの開口部１７を残
して設ける。この場合、外部封止材１６の粘性率が５０
０００〜１０００００ｃｐ程度と高いので、半導体チッ
プ１１の底面中央部と回路基板１３との間にまでは入り
込むことはなく、また半導体チップ１１の搭載エリアか
ら周囲に大きく食み出すことがない。この後、オーブン
等を用いて加熱し、外部封止材１６を硬化させる。First, as shown in FIGS. 1A and 1B,
Semiconductor chip 11 by flip chip bonding or the like
Are connected to connection electrodes 14 on a circuit board 13 via solder bumps 15 so that the semiconductor chip 11
Is mounted on the circuit board 13. Next, FIG.
As shown in (b), the viscosity is adjusted to 5,000 while adjusting the injection amount using an injector (not shown) such as a dispenser.
An external sealing material 16 made of a thermosetting resin such as an epoxy resin having a high value of about 0 to 100000 cp is provided between the outer peripheral portion of the bottom surface of the semiconductor chip 11 and the circuit board 13 while leaving two openings 17. In this case, the viscosity of the external sealing material 16 is 50
Since it is as high as about 000 to 100,000 cp, it does not penetrate into the space between the central portion of the bottom surface of the semiconductor chip 11 and the circuit board 13 and does not largely protrude from the mounting area of the semiconductor chip 11 to the periphery. Thereafter, the external sealing material 16 is cured by heating using an oven or the like.
【０００８】次に、図３（イ）、（ロ）に示すように、
ディスペンサー等の射出器（図示せず）を用いて粘性率
が１０００〜１００００ｃｐ程度と低いエポキシ系等の
熱硬化性樹脂からなる内部封止材１８を外部封止材１６
の内側での半導体チップ１１と回路基板１３との間に一
方の開口部１７から充填する。このとき、外部封止材１
６の内側での半導体チップ１１と回路基板１３との間に
存在する空気は、この部分に充填される内部封止材１８
によって強制的に他方の開口部１７から排出される。こ
の後、オーブン等を用いて加熱し、内部封止材１８を硬
化させる。Next, as shown in FIGS. 3A and 3B,
Using an injector (not shown) such as a dispenser, the internal sealing material 18 made of a thermosetting resin such as an epoxy resin having a low viscosity of about 1000 to 10000 cp is replaced with the external sealing material 16.
The space between the semiconductor chip 11 and the circuit board 13 inside the space is filled from one opening 17. At this time, the external sealing material 1
The air existing between the semiconductor chip 11 and the circuit board 13 inside the inside 6 is filled with the internal sealing material 18 filled in this portion.
Is forcibly discharged from the other opening 17. Thereafter, the internal sealing material 18 is cured by heating using an oven or the like.
【０００９】このように、この半導体装置では、粘性率
の高い樹脂からなる外部封止材１６を半導体チップ１１
の底面中央部と回路基板１３との間に入り込ませること
ができなくても、この部分に粘性率の低い樹脂からなる
内部封止材１８を入り込ませることができ、したがって
実装強度が低下しないようにすることができる。また、
外部封止材１６が半導体チップ１１の搭載エリアから周
囲に大きく食み出すことがなく、さらにこの外部封止材
１６の内側に内部封止材１８を設けているので、半導体
チップ１１の実質的な実装面積を可及的に小さくするこ
とができる。なお、内部封止材１８を充填して硬化させ
た後、必要に応じて、２つの開口部１７を粘性率の高い
樹脂からなる封止材で封止するようにしてもよい。As described above, in this semiconductor device, the external sealing material 16 made of a resin having a high viscosity is attached to the semiconductor chip 11.
Even if it cannot be inserted between the central part of the bottom surface and the circuit board 13, the internal sealing material 18 made of a resin having a low viscosity can be inserted into this part, so that the mounting strength does not decrease. Can be Also,
Since the external encapsulant 16 does not largely protrude from the mounting area of the semiconductor chip 11 to the periphery, and the internal encapsulant 18 is provided inside the external encapsulant 16, the semiconductor chip 11 is substantially The mounting area can be made as small as possible. After the internal sealing material 18 is filled and cured, the two openings 17 may be sealed with a sealing material made of a resin having a high viscosity if necessary.
【００１０】[0010]
【発明の効果】以上説明したように、この発明によれ
ば、外部封止材が半導体チップの搭載エリアから周囲に
大きく食み出さないようにすることができる上、この外
部封止材の内側に内部封止材を設けているので、実装強
度を低下することなく、半導体チップの実質的な実装面
積を可及的に小さくすることができ、ひいては高密度実
装を図ることができる。As described above, according to the present invention, it is possible to prevent the external encapsulant from largely protruding from the mounting area of the semiconductor chip to the surroundings, and to prevent the external encapsulant from being protruded inside the external encapsulant. Since the internal encapsulant is provided, the substantial mounting area of the semiconductor chip can be reduced as much as possible without lowering the mounting strength, and high-density mounting can be achieved.
【図１】（イ）はこの発明の一実施例における半導体装
置の製造に際し、半導体チップを回路基板上に搭載した
状態の平面図、（ロ）はそのＡ−Ａ線に沿う断面図。1A is a plan view showing a state in which a semiconductor chip is mounted on a circuit board in manufacturing a semiconductor device according to an embodiment of the present invention, and FIG. 1B is a cross-sectional view taken along the line AA.
【図２】（イ）は同半導体装置の製造に際し、粘性率の
高い樹脂からなる外部封止材を設けた状態の平面図、
（ロ）はそのＢ−Ｂ線に沿う断面図。FIG. 2A is a plan view showing a state in which an external encapsulant made of a resin having a high viscosity is provided in manufacturing the semiconductor device;
(B) is a cross-sectional view along the line BB.
【図３】（イ）は同半導体装置の製造に際し、粘性率の
低い樹脂からなる内部封止材を設けた状態の平面図、
（ロ）はそのＣ−Ｃ線に沿う断面図。FIG. 3A is a plan view showing a state in which an internal sealing material made of a resin having a low viscosity is provided in manufacturing the semiconductor device.
(B) is a cross-sectional view along the line CC.
【図４】（イ）は従来の半導体装置の平面図、（ロ）は
そのＤ−Ｄ線に沿う断面図。FIG. 4A is a plan view of a conventional semiconductor device, and FIG. 4B is a cross-sectional view taken along the line DD.
１１ 半導体チップ １３ 回路基板 １６ 外部封止材 １７ 開口部 １８ 内部封止材 Reference Signs List 11 semiconductor chip 13 circuit board 16 external sealing material 17 opening 18 internal sealing material
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/60 311 H01L 23/28 ──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. 7 , DB name) H01L 21/60 311 H01L 23/28
Claims (4)
グ等により搭載された半導体チップの底面外周部と前記
回路基板との間に粘性率の高い樹脂からなる外部封止材
を設け、該外部封止材の内側での前記半導体チップと前
記回路基板との間に粘性率の低い樹脂からなる内部封止
材を設けたことを特徴とする半導体装置。An external sealing material made of a resin having a high viscosity is provided between an outer peripheral portion of a bottom surface of a semiconductor chip mounted on a circuit board by flip chip bonding or the like and the circuit board, and the external sealing material is provided. A semiconductor device provided with an internal sealing material made of a resin having a low viscosity between the semiconductor chip and the circuit board inside the semiconductor chip.
１０００００ｃｐ程度であり、前記内部封止材の粘性率
は１０００〜１００００ｃｐ程度であることを特徴とす
る請求項１記載の半導体装置。2. The viscosity of the external sealing material is 50,000 to
2. The semiconductor device according to claim 1, wherein the viscosity is about 100,000 cp, and the viscosity of the internal sealing material is about 1,000 to 10,000 cp.
グ等により搭載された半導体チップの底面外周部と前記
回路基板との間に粘性率の高い樹脂からなる外部封止材
を複数の開口部を残して設け、該外部封止材の内側での
前記半導体チップと前記回路基板との間に前記開口部か
ら粘性率の低い樹脂からなる内部封止材を充填すること
を特徴とする半導体装置の製造方法。3. An external encapsulant made of a resin having a high viscosity is left between a peripheral portion of a bottom surface of a semiconductor chip mounted on a circuit board by flip-chip bonding and the circuit board and a plurality of openings. A method of manufacturing a semiconductor device, comprising filling an internal sealing material made of a resin having a low viscosity from the opening between the semiconductor chip and the circuit board inside the external sealing material. .
１０００００ｃｐ程度であり、前記内部封止材の粘性率
は１０００〜１００００ｃｐ程度であることを特徴とす
る請求項３記載の半導体装置の製造方法。4. The viscosity of the external sealing material is 50,000 to
4. The method according to claim 3, wherein the viscosity is about 100,000 cp and the viscosity of the internal sealing material is about 1,000 to 10,000 cp.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12547492A JP3194159B2 (en) | 1992-04-20 | 1992-04-20 | Semiconductor device and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12547492A JP3194159B2 (en) | 1992-04-20 | 1992-04-20 | Semiconductor device and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05299469A JPH05299469A (en) | 1993-11-12 |
| JP3194159B2 true JP3194159B2 (en) | 2001-07-30 |
Family
ID=14910988
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12547492A Expired - Fee Related JP3194159B2 (en) | 1992-04-20 | 1992-04-20 | Semiconductor device and method of manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3194159B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2891184B2 (en) * | 1996-06-13 | 1999-05-17 | 日本電気株式会社 | Semiconductor device and manufacturing method thereof |
| JPH1041615A (en) * | 1996-07-19 | 1998-02-13 | Matsushita Electric Ind Co Ltd | Substrate for mounting semiconductor chip and method for mounting semiconductor chip |
| TW392315B (en) * | 1996-12-03 | 2000-06-01 | Nippon Electric Co | Boards mounting with chips, mounting structure of chips, and manufacturing method for boards mounting with chips |
-
1992
- 1992-04-20 JP JP12547492A patent/JP3194159B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH05299469A (en) | 1993-11-12 |
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