JP3192560B2 - Semiconductor light emitting device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor light emitting device having an emission wavelength in a range from red light to ultraviolet light, and more particularly, to a semiconductor light emitting region made of a nitride of a metal material such as Al, Ga, In or the like. It relates to one having a thin film.

[0002]

2. Description of the Related Art In recent years, III-N
Group V compound semiconductors have attracted attention as light-emitting materials in the visible and ultraviolet regions due to their wide energy gaps. Currently, blue light-emitting diodes having a light-emitting region made of GaInN are in practical use. By the way, AlN is 6.28e
V and GaN have an energy gap of 3.39 eV and InN has an energy gap of 1.95 eV.

FIG. 5 shows a cross-sectional structure of a conventional blue light emitting diode. In the figure, 200a is a blue light emitting diode, which is a GaN
Semiconductor laminated structure 2 formed via buffer layer 201
It has ten.

[0004] This semiconductor laminated structure 210 comprises an n-type GaN layer 202, an n-type AlGaN cladding layer 203, a zinc-doped GaInN active layer 204,
It has a structure in which a p-type GaN cap layer 206 and a p-type GaN cap layer 206 are stacked.

Here, a part of the n-type GaN layer 202 is exposed, and an n-type electrode 207 is formed on the exposed part. Further, the p-type electrode 208 is formed of the p-type GaN.
It is formed on the surface of the cap layer 206.

Next, the manufacturing method will be briefly described.

First, on a sapphire substrate 200, a metal organic vapor deposition method (metal organic vapor deposition method) using trimethylgallium and ammonia as raw materials.
The GaN buffer layer 201 is grown by Hase Epitaxy (hereinafter abbreviated as MOVPE method).

Subsequently, an n-type GaN layer 202 and an n-type AlGaN cladding layer 2 are similarly formed thereon by MOVPE.
03, zinc-doped GaInN active layer 204, p-type AlG
An aN cladding layer 205 and a p-type GaN cap layer 206 are sequentially formed. Here, trimethyl aluminum and trimethyl indium are used as group III element raw materials,
Monosilane (n-type), biscyclopentadienyl magnesium (p-type), and diethyl zinc are used as doping raw materials.

Thereafter, a heat treatment is performed at 700 ° C. in a nitrogen atmosphere to activate magnesium which is a p-type impurity.

Further, the cap layer 206 on the outermost surface
Each semiconductor layer up to the n-type GaN layer 202 is selectively etched to expose a part of the n-type GaN layer 202, and an n-type electrode 207 is formed on the exposed part of the n-type GaN layer 202. Further, a p-type electrode 208 is formed on the p-type GaN cap layer 206. Thereby, the light emitting diode 200
Complete a.

In the light emitting diode 200a thus manufactured, bright 450 nm blue light emission from the zinc-doped GaInN active layer 204 can be obtained.

[0012]

However, in the conventional blue light emitting diode, since the sapphire used as the substrate is an insulator, the electrode 207 on the substrate side is, as shown in FIG. It is necessary to expose a part of the layer 202 by etching and to provide the exposed part, and there is a problem that a manufacturing process of the light emitting diode becomes complicated.

Further, in the process of fabricating a semiconductor laser, the formation of a resonator is indispensable. However, when a sapphire substrate is used, the formation of the resonator by cleavage, which is established in the current semiconductor laser manufacturing method, is not possible. It is possible, and therefore, the resonator must be manufactured by etching. However, a technique for forming a resonator surface by etching is not established, and a special device is required, so that the process becomes more complicated.

In order to solve the problems in the manufacturing process of the light emitting device using the sapphire substrate, a method using a conductive semiconductor substrate such as Si or GaAs has been attempted.

However, when a GaAs substrate is used, nitride (for example, GaN), which is a constituent material of the active layer 204 as a light emitting region, and Ga, which is a constituent material of the substrate, are used.
The lattice mismatch rate with As is as large as about 26%, and there is a problem that a high-quality nitride semiconductor layer cannot be obtained.

When a Si substrate is used, the lattice mismatch between Si and a nitride (for example, GaN) is about 21%, which is slightly smaller than that of a GaAs substrate. When a Si substrate is used as the substrate of the semiconductor laser, it becomes impossible to form a resonator by cleavage.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned conventional problems, and it is possible to easily form an electrode and a resonator of a semiconductor laser and obtain a high-quality nitride semiconductor. The light-emitting area was composed of a thin film,
It is an object of the present invention to obtain a semiconductor light emitting device having an element structure applicable to both light emitting diodes and semiconductor lasers.

[0018]

A semiconductor according to the present invention.
The light emitting device is composed of a GaP crystal substrate and a GaP crystal substrate.
Semiconductor laminated structure including semiconductor thin film formed to be light emitting region
Between the GaP crystal substrate and the semiconductor thin film.
And a buffer layer made of a mixed crystal of nitride and phosphide.
A semiconductor light emitting device, wherein the semiconductor thin film is made of a metal material.
Metal material comprising a nitride of a raw material and constituting the nitride
Is a metal element of any one of Al, Ga and In
Element or two or more of Al, Ga and In
The mixed crystal that is a mixture of elemental elements and constitutes the buffer layer.
Is any one of Al, Ga and In, or
Is a mixture of two or more of Al, Ga and In.
Of the metal material α, Al, Ga and In
Any one of Al, Ga and In
Of the metal material β consisting of a mixture of two or more of
The mixed crystal α _1-x β _x N _1-y P _{y with} P (0 <x <1, 0 <y <
1), whereby the above object is achieved.

[0019]

[0020]

[0021]

[0022]

[0023]

[0024]

In the present invention, a semiconductor laminated structure including a semiconductor thin film made of nitride as a light emitting region is arranged on a conductive GaP substrate, and one electrode is provided on the surface of the semiconductor laminated structure. With the arrangement, the other electrode is provided on the back side of the GaP substrate, and the two electrodes can supply a current to the semiconductor thin film. For this reason, when forming the electrode, by performing a complicated etching process on the semiconductor layer constituting the semiconductor laminated structure,
It is not necessary to form a region for arranging electrodes on the substrate side.

Since the substrate is made of GaP crystal, the substrate can be cleaved, and the resonator of the semiconductor laser can be easily formed by cleavage. Resonator formation by such cleavage is an established technique, and resonator formation can be performed with good reproducibility. In addition, a special device used in the method of forming a resonator by etching is not required, and the process of forming the resonator is very simple.

In the present invention, since the buffer layer is provided between the GaP substrate and the nitride semiconductor layer forming the semiconductor multilayer structure, the lattice between the GaP substrate and the nitride semiconductor layer having the semiconductor multilayer structure is formed. The mismatch will be alleviated. Thereby, the crystallinity of the semiconductor laminated structure including the semiconductor thin film can be made very good.

In the present invention, (11)
1) Since the semiconductor laminated structure is formed on the surface,
11) Since the crystal plane is excellent in consistency with a wurtzite-type crystal having six-fold symmetry, the above-described semiconductor multilayer structure is a high-quality nitride having the most stable wurtzite-type crystal structure. It will be composed of an object semiconductor layer.

In the present invention, the GaP substrate (10
Since the semiconductor laminated structure is formed on the 0) plane, the crystal constituting the nitride semiconductor layer is a zinc blende type crystal which is a metastable phase of the nitride. In this zinc blende type crystal, the p-type impurity is easily activated, so that the p-type semiconductor layer is easily formed.

[0029]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS First, the basic principle of the present invention will be briefly described.

The present invention solves the above-mentioned conventional problems by using GaP as a constituent material of the substrate.

The lattice mismatch between the GaP crystal forming the substrate and the GaN crystal forming the semiconductor laminated structure on the substrate is about 21%, which is equivalent to the lattice mismatch between the Si crystal and the GaN crystal. However, the GaP crystal has an advantage that cleavage is easy.

However, when GaP is used as a constituent material of the substrate, the lattice mismatch ratio is considerably large. Therefore, it is desirable to insert a buffer layer between the substrate and the nitride semiconductor layer.

Suitable examples of such a buffer layer are described below.

(1) First, a buffer layer made of a nitride αN of a metal material α grown at a lower temperature than a semiconductor thin film constituting a light emitting region. Here, as the metal material α,
Any one of Al, Ga and In, or A
A mixture of two or more of l, Ga and In can be used.

(2) Second, a superlattice buffer layer in which a first thin film layer made of a nitride βN of a metal material β and a second thin film layer made of a phosphide γP of a metal material γ are alternately stacked. is there.

Here, the metal materials β and γ are A
l, any one of Ga and In, or A
A mixture of two or more of l, Ga and In can be used.

(3) Third, the above nitride βN and phosphide γ
A buffer layer composed of a mixed crystal _{β 1-x γ x N 1} -y P y with N. Here, as the metal materials β and γ, Al, G
any one of a and In, Al, Ga
And a mixture of two or more of In and In, and the mixed crystal ratios X and Y are 0 <x <1 and 0 <y, respectively.
<Value within the range of 1.

Usually, nitride has a wurtzite crystal structure, and as a substrate on which a nitride having a wurtzite crystal structure is grown, GaP having the same six-fold symmetry as the wurtzite crystal is used. It is necessary to use the (111) plane.

On the other hand, it is generally said that p-type doping of nitride is difficult due to a high free electron concentration due to group V vacancies which easily occur in wurtzite-type crystals. On the other hand, in other III-V semiconductors such as GaP and GaAs having a zinc blende type crystal structure, n-type and p-type conductivity types can be easily obtained by adding impurities, so It is expected that a p-type semiconductor will be easily obtained if the zinc-blende type crystal is used. In the nitride crystal structure, the wurtzite type is the most stable, but the zinc blende type may exist as a metastable phase.

Table 1 shows the lattice constants a and c and the forbidden band width Eg when the nitride has a wurtzite crystal structure and a zinc blende crystal structure.

[0041]

[Table 1]

Hereinafter, embodiments of the present invention will be described. (Embodiment 1) FIG. 1 shows a sectional structure of a light emitting diode according to a first embodiment of the present invention.
In the light emitting diode of this embodiment using the n-type GaP substrate 100, the (111)
A semiconductor multilayer structure 110a is provided via an n-type GaN buffer layer 101 formed on a crystal plane.

The semiconductor multilayer structure 110a includes a zinc-doped Ga _0.94 In _0.06 N active layer 104 as a light emitting region, and is formed on the (111) plane of the n-type GaP substrate 100.
An n-type GaN layer 102 and an n-type A
l _0.15 Ga _0.85 N cladding layer 103, zinc-doped Ga
_0.94 In _0.06 N active layer 104, p-type Al _0.15 Ga _0.85 N
The structure is such that a clad layer 105 and a p-type GaN cap layer 106 are sequentially stacked.

A p-type electrode 108 is formed on the p-type GaN cap layer 106, and an n-type electrode 107 is formed on the back side of the n-type GaP substrate 100. A drive current is supplied to the active layer 104 of the structure 110a.

Next, the manufacturing method will be described. First, n
An n-type GaN buffer layer 101 is formed at a relatively low temperature of 500 ° C. on the (111) plane of the type GaP substrate 100 by MOVPE. Next, the temperature of the substrate 100 was raised to 1000 ° C., and the n-type GaN layer 102 and the n-type Al _0.15 Ga were formed on the n-type GaN buffer layer 101 by MOVPE.
_{The 0.85} N cladding layer 103 is laminated. Then 800 ° C
To form a zinc-doped Ga _0.94 In _0.06 N active layer 104 on the n-type Al _0.15 Ga _0.85 N cladding layer 103,
A p-type Al _0.15 Ga _0.85 N cladding layer 105 and a p-type GaN cap layer 106 are again formed thereon at 1000 ° C. Here, the same material as that of the conventional example is used as the material of each of the semiconductor layers.

Thereafter, a heat treatment at 700 ° C. is performed in a nitrogen atmosphere to activate magnesium which is a p-type impurity.
Further, the p-type electrode 10 is formed on the p-type GaN cap layer 106.
8 on the back side of the n-type GaP substrate 100.
To form Thereby, the light emitting diode 1 of the present embodiment
00a is completed.

In this embodiment, the conductive substrate GaP
Since the substrate 100 is used, the n-type electrode 107 can be formed on the rear surface side of the substrate, so that an etching process for forming an electrode is not required as in the case of using a sapphire substrate which is an insulator.

Since the nitride semiconductor layer is grown on the (111) plane of the GaP substrate having the same six-fold symmetry as the wurtzite crystal, the nitride semiconductor layer having the wurtzite crystal structure and the substrate have the same structure. And excellent consistency.

Further, since the buffer layer 101 is interposed between the semiconductor multilayer structure 110a and the GaP substrate 100, lattice mismatch between the semiconductor layer constituting the semiconductor multilayer structure 110a and the substrate can be reduced. Therefore, a high-quality wurtzite-type nitride layer is obtained as the semiconductor multilayer structure 110a, and a wavelength of 45 nm is obtained from the zinc-doped GaInN active layer 104 included in the semiconductor multilayer structure.
Bright blue light emission of 0 nm can be obtained.

In the above embodiment, the buffer layer 101
Is composed of GaN, but the constituent material of the buffer layer is not limited to this, and may be any nitride βN grown at a lower temperature than the nitride semiconductor layer serving as the light emitting portion.
Here, as the metal material β constituting the nitride βN,
As described above, any one of Al, Ga, and In, or a mixture of two or more of Al, Ga, and In can be used.

(Embodiment 2) FIG. 2 is a view for explaining the structure of a light emitting diode according to a second embodiment of the present invention. FIG. 2 (a) is a sectional view of the light emitting diode, and FIG.
(B) is a diagram showing a structure of a buffer layer having a super lattice structure constituting the light emitting diode.

In the figure, 100b is the light emitting diode of this embodiment, which is the light emitting diode 1 of the first embodiment.
Instead of the buffer layer 101 in 00a, a buffer layer 101b having a multilayer structure (superlattice structure) in which two very thin thin film layers of different constituent materials are alternately laminated is used.
This buffer layer 101b has a G layer as shown in FIG.
It is formed by alternately stacking 100 sets of aP monoatomic layers and GaN monoatomic layers. Other configurations are the same as those of the first embodiment.
This is the same as the embodiment.

In the light emitting diode of this embodiment,
As in the case of the first embodiment, a high-quality wurtzite nitride layer is obtained as a semiconductor layer constituting the semiconductor multilayer structure, and a wavelength of 450 nm is obtained from the zinc-doped GaInN active layer 104.
m bright blue light emission can be obtained.

In this embodiment, the GaP monolayer and the GaN monolayer are used as the thin film layers constituting the buffer layer 101b having the super lattice structure, but the present invention is not limited to this combination. For example, as the thin film layer made of the nitride βN, instead of the GaN monoatomic layer, the metal material β constituting the nitride βN is any one of Al, Ga and In, or Al, Ga and In. May be a mixture of two or more of the above. Further, as the thin film layer made of phosphide γN, instead of a GaP monoatomic layer, the metal material γ constituting phosphide γN is any one of Al, Ga and In, or Al, Ga and In. May be a mixture of two or more of the above.

Further, the number of atomic layers in each thin film layer can be selected from a monoatomic layer to about 100 atomic layers.
The number of sets of the thin film layer made of phosphide and the thin film layer made of nitride in the super lattice structure can be selected from 10 to 100 sets.

The buffer layer having the super lattice structure is composed of two substances (eg, GaN and AlN) having different refractive indexes.
Composed of a plurality of GaN layers and AlN layers alternately stacked, and the thickness of each of the stacked layers is set to １ of the emission wavelength.
With such a structure, a function as a highly reflective film can be provided. Thereby, the generated light is Ga
Absorption by the P substrate 100 can be prevented, and the luminous efficiency is reduced by 2
It can be increased about twice.

Further, instead of providing the buffer layer with the function as a high reflection film as described above, a high reflection film may be provided separately from the buffer layer.

FIG. 2C shows a light emitting diode having such a configuration as a modification of the second embodiment. In the figure,
100b ₁ is a light emitting diode according to this modified example. In the semiconductor laminated structure 110b of the light emitting diode 100b ₁ , between the GaN layer 102 and the n-type cladding layer 103,
The high reflection layer 109 is formed. This high reflection layer 109
Has a structure in which, for example, a plurality of GaN layers and AlN layers are alternately stacked, and the thickness of each of the stacked layers is 分 の of the emission wavelength.

In the second embodiment, it goes without saying that the structure of the modification shown in FIG. 2C is effective.

(Embodiment 3) FIG. 3 shows a sectional structure of a light emitting diode according to a third embodiment of the present invention.
The same reference numerals as those in FIG.
00c is a light emitting diode of the present embodiment. In this light emitting diode 100c, (100) of the GaP substrate 100
An n-type GaN _1-y P _y (0 <y <1) buffer layer 101c is formed on a crystal plane, and a semiconductor multilayer structure 110c is formed on the buffer layer 101c. The semiconductor multilayer structure 110c is formed by sequentially forming an n-type GaN cladding layer 103c and a zinc-doped Ga layer on the buffer layer 101c.
_0.8 In _0.2 N active layer 104c, p-type GaN cladding layer 1
05c and a p-type GaN cap layer 106.

Next, the manufacturing method will be described. First, n
A molecular beam epitaxial method, so-called MBE (Molecular B)
n-type Ga at 600 ° C. according to the method of “Em Epitaxy”.
The N _1-y P _y (0 <y <1) buffer layer 101c is formed.

Next, the temperature of the substrate 100 is raised to 800 ° C., and the n-type G
aN cladding layer 103c, zinc-doped Ga _0.8 In _0.2 N
An active layer 104c, a p-type GaN cladding layer 105c, and a p-type GaN cap layer 106 are sequentially formed to form a semiconductor multilayer structure 110c.

Here, gallium, indium, plasma-decomposed nitrogen and phosphorus are used as raw materials of the elements constituting each semiconductor layer, and silicon (n
Mold) and beryllium (p-type). In addition, the clad layer 105c and the cap layer 106 have different carrier concentrations. That is, the n-type cladding layer 105c has a carrier concentration of 5 × 10 ¹⁷ / cm 3 in order to maintain high quality crystals.
³ and slightly lower, p-type cap layer 106 is slightly high as 1 × 10 ¹⁹ / cm ³ carrier concentration for ohmic improvement.

Thereafter, a p-type electrode 108 is formed on the p-type GaN cap layer 106 and an n-type
The mold electrode 107 is formed to complete the light emitting diode 100c.

Next, the function and effect will be described. In this embodiment, the GaP substrate 100 having no six-fold symmetry (1
Since the (00) plane is used as a crystal growth surface of the nitride semiconductor layer, the semiconductor crystal formed on the substrate 100
It becomes a sphalerite type.

As a preliminary experiment, a single layer of GaN was grown on the (100) plane of a GaP substrate and subjected to X-ray diffraction.
A sharp diffraction peak corresponding to the crystal plane (200) of zinc blende type GaN was observed, and it was confirmed that the zinc blende type single crystal was growing.

G calculated from the diffraction angle of the diffraction peak
The lattice constant of aN was 4.49 angstroms, which was consistent with the previously reported value.

In the nitride semiconductor layer having the zinc blende type crystal structure, the p-type impurity is easily activated, so that in this embodiment, heat treatment for activating the p-type semiconductor is not required.
In the light emitting diode of this embodiment, zinc-doped GaIn
Bright green light with a wavelength of 520 nm can be obtained from the N active layer 104c.

In this embodiment, the n-type GaN _1-y P
_y (0 <y <1) Although a buffer layer was used, the constituent material of the buffer layer is not limited to this, and a mixed crystal β _1-x γ _x N _1-y P of nitride βN and phosphide γN is used. Any _y can be used, and any mixed crystal ratio may be used as long as 0 <x <1 and 0 <y <1.

The composition ratio y of the n-type GaN _1-y P _y (0 <y <1) buffer layer 101c does not need to be uniform throughout the buffer layer. ,
The structure may gradually decrease from a portion in contact with the n-type GaP substrate 100 to a portion in contact with the n-type GaN cladding layer 103c. In this case, the buffer layer can more effectively reduce lattice mismatch. .

Further, the n-type GaN _1-y P _y (0 <y <
1) The method of forming the buffer layer 101 is the same as that of the MB of the above embodiment.
The method is not limited to the E method, and other methods may be used. For example, Ga
It is also effective to heat the P substrate 100 to about 700 ° C. and expose the surface to a nitrogen atmosphere, thereby replacing some of the phosphorus atoms on the surface of the GaP substrate with nitrogen atoms, thereby forming a buffer layer.

(Embodiment 4) FIG. 4 shows a sectional structure of a semiconductor laser according to a fourth embodiment of the present invention.
00d is the semiconductor laser of this embodiment. In this semiconductor laser 100d, (100) of the n-type GaP substrate 100 is used.
N-type GaN _1-y P _y (0 <y <1) buffer layer 10 on the surface
1c, and a semiconductor multilayer structure 110d is formed on the buffer layer 101c. The semiconductor multilayer structure 110d is sequentially formed on the buffer layer 101c, n-type GaN layer 102, n-type Al _0.5 In _0.5 N cladding layer 103d, an undoped Ga _0.6 In _0.4 N active layer 1
04d, and a p-type Al _0.5 In _0.5 N cladding layer 105d, and p-type GaN cap layer 106.

In this semiconductor laser 100d, p
Window 1 is formed on the GaN cap layer 106
11 is formed, and a p-type electrode 108d is formed on the entire surface of the insulating film 110,
The n-type electrode 107 is formed on the back side of the n-type GaP substrate 100.

Next, the manufacturing method will be described. First, n
N-type GaN _1-y P _y (0 <y <1) on the (100) plane of the GaP-type GaP substrate 100 by the MBE method as in the third embodiment.
Buffer layer 101c, n-type GaN layer 102, n-type Al
_0.5 In _0.5 N clad layer 103d, non-doped Ga _0.6
An In _0.4 N active layer 104d, a p-type Al _0.5 In _0.5 N clad layer 105d, and a p-type GaN cap layer 106 are sequentially laminated to form a semiconductor laminated structure 110d. Here, aluminum, gallium, indium, dimethylhydrazine and phosphorus as nitrogen sources were used as raw materials of constituent elements of each semiconductor layer, and the same dopant raw materials as in Example 3 were used.

Thereafter, an n-type electrode 107 is formed on the back side of the n-type GaP substrate 100, and an insulating film 11 having a stripe-shaped window 111 on the p-type GaN cap layer 106.
0, and a p-type electrode 108 is formed thereon to complete the semiconductor laser 100d.

Next, the function and effect will be described. In the semiconductor laser 100d having such a structure, the current injected from the n-type electrode 107 and the p-type electrode 108 flows only in the stripe-shaped opening 111. At a predetermined injection current level, the active layers 104d to 440n
m blue laser light is emitted.

Also, in this embodiment, the (100) plane of the GaP substrate 100 having no six-fold symmetry is used as the crystal growth surface of the nitride semiconductor layer.
The semiconductor crystal formed on 00 becomes a zinc blende type,
Heat treatment for activating the p-type semiconductor is not required.

Further, since a GaP substrate is used, a cleaving method can be used when forming a resonator of a semiconductor laser in the same manner as a conventional method of manufacturing a semiconductor laser, and a complicated process such as etching is not required. Become.

[0079]

As described above, according to the semiconductor light emitting device of the present invention, since a semiconductor laminated structure including a nitride semiconductor layer as a light emitting portion is formed on a GaP crystal substrate, a sapphire substrate is used. As in the case, complicated etching processing at the time of electrode formation is not required, and the formation of the resonator of the semiconductor laser can be easily performed by cleavage, whereby the manufacturing process of the semiconductor light emitting device can be simplified. effective.

According to the present invention, since the buffer layer is provided between the GaP substrate and the nitride semiconductor layer forming the semiconductor multilayer structure, the buffer layer is provided between the GaP substrate and the nitride semiconductor layer having the semiconductor multilayer structure. As a result, the lattice mismatch is alleviated, whereby the crystallinity of the semiconductor multilayer structure including the semiconductor thin film can be made very good.

According to the present invention, the (10)
Since the semiconductor laminated structure is formed on the 0) plane, the crystal constituting the nitride semiconductor layer is a zinc-blende-type crystal which is a metastable phase of nitride, and in this zinc-blende-type crystal, Since the p-type impurity is easily activated, there is an effect that the formation of the p-type semiconductor layer is facilitated.

According to the present invention, (11)
1) Since the semiconductor laminated structure is formed on the surface,
11) Since the crystal plane is excellent in consistency with a wurtzite crystal having six-fold symmetry, the above-described semiconductor multilayer structure is converted into a high-quality nitride having the most stable wurtzite crystal structure. There is an effect that a structure made of a semiconductor layer can be obtained.

As described above, according to the present invention, a high-quality light emitting diode or semiconductor laser can be manufactured by simple steps.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view illustrating a structure of a light emitting diode according to a first embodiment of the present invention.

FIG. 2 is a diagram illustrating a configuration of a light emitting diode according to a second embodiment of the present invention. FIG. 2A shows a cross-sectional structure of the light-emitting diode, and FIG. 2B shows a cross-sectional structure of a buffer layer having a super lattice structure constituting the light-emitting diode. FIG. 2C shows a cross-sectional structure of a light emitting diode according to a modification of the second embodiment.

FIG. 3 is a cross-sectional view illustrating a structure of a light emitting diode according to a third embodiment of the present invention.

FIG. 4 is a sectional view showing a structure of a semiconductor laser according to a fourth embodiment of the present invention.

FIG. 5 is a cross-sectional view illustrating a structure of a conventional light emitting diode.

[Explanation of symbols]

100 GaP substrate 100 a, 100 b, 100 b ₁ , 100 c Light emitting diode 100 d Semiconductor laser 101 b, 101 c Buffer layer 102 GaN layer 103 c, 103 d n-type cladding layer 104 c, 104 d active layer 105 c, 105 d p-type cladding layer 106 cap layer 107 n-type electrode 108 p-type electrode 109 high reflection layer 110 insulating film 111 striped window (opening)

Claims (1)

(57) [Claims] (1)A GaP crystal substrate; A semiconductor formed on the GaP crystal substrate and serving as a light emitting region
A semiconductor laminated structure including a thin film; A nitride layer provided between the GaP crystal substrate and the semiconductor thin film;
A buffer layer comprising a mixed crystal of a chloride and a phosphide, A semiconductor light emitting device comprising: The semiconductor thin film is made of a nitride of a metal material, The metal material constituting the nitride is Al, Ga and I
any one of n, Al, Ga
And a mixture of two or more metal elements of In and The mixed crystal constituting the buffer layer, Any one of Al, Ga and In, or A
gold comprising a mixture of two or more of 1, Ga and In
The nitrogenous material αN of the genus material α; Any one of Al, Ga and In, or A
gold comprising a mixture of two or more of 1, Ga and In
The mixed crystal α of the material β with the phosphide βP _1-x β _x N _1-y P
_y (0 <x <1, 0 <y <1).