JP3190236B2 - High frequency 90 degree distribution / synthesis circuit - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a multilayered high-frequency circuit technology for forming a high-frequency circuit by laminating a dielectric film or a conductor on a semiconductor substrate or a dielectric substrate.
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high-frequency 90-degree distribution / synthesis circuit for distributing and synthesizing a high-frequency signal of GHz or more with a phase shift of 90 degrees, and particularly relates to a circuit configuration capable of correcting a disturbance in characteristics due to a variation in dielectric film thickness.

[0002]

2. Description of the Related Art A high-frequency circuit such as a high-output amplifier or a balanced mixer is constituted by using an amplifier as a unit unit or two or more mixers. In such a high-frequency circuit, each amplifier or mixer serving as a unit
A 90-degree distribution / combination circuit is used which distributes high-frequency signals equally by shifting the phase by 90 degrees or combines high-frequency signals output from each amplifier or mixer by shifting the phase by 90 degrees.

FIG. 16 is a diagram showing a configuration of a 90-degree distribution / combination circuit using a conventional multilayer high-frequency circuit technique.
(A) is a perspective view, (b) is a cross-sectional view taken along line AA of (a), and (c) is an equivalent circuit diagram. FIG. 16 (a)
Is a dielectric film 5 to facilitate understanding of the structure.
1,5-2 is expressed as transparent.

In FIG. 1, a ground conductor 3 is formed on an upper surface of a semiconductor substrate 4, a dielectric film 5-1 is formed on the ground conductor 3, and a の wavelength light is formed on the dielectric film 5-1. A transmission line (hereinafter also referred to as a λ / 4 line) 2 is formed, and a dielectric film 5-1 is provided on the dielectric film 5-1 and the λ / 4 line 2.
Are formed. Then, on the dielectric film 5-2, λ /
Four lines 1 are formed.

The line widths (w ₁ and w ₂ ) of the λ / 4 lines 1 and 2 and the heights (t ₁ and t ₂ ) from the ground conductor to the two lines are described.
By appropriately determining ₂ ), the λ / 4 lines 1 and 2 are
Functions as a directional coupler. That is, when a signal is input from the terminal 1, a signal having a phase difference of 90 degrees is output to the terminals 2 and 3, and no signal is output to the terminal 4.

In this circuit, the thickness (t ₂ ) of the dielectric film 5-1 and the thickness of the dielectric film 5-2, t ₁ -t ₂ (= δ)
Since t) is as thin as several μm to 20 μm, and the line width and line interval can be reduced, it is possible to reduce the size and density of the circuit.

[0007]

In the multilayered high frequency 90-degree distribution / combination circuit having the above-described structure, the dielectric film thickness between the λ / 4 lines is only several μm, and the process is highly accurate (for example, It is not easy to control the film thickness to a thickness error of about 0.05 μm).

Further, in order to greatly improve the accuracy of the film thickness, it is necessary to repeat steps such as edge bag and measurement, and the yield is not good, so that the cost of the process is greatly increased. FIG. 17 shows the relationship between the film thickness δt between the λ / 4 lines 1 and 2 and the degree of coupling. Where each λ
The parameters of the / 4 line are as follows.

When w ₁ = 8 μm, w ₂ = 10 μm δt = ₂ , 2.5, 3 μm δt = 2.5 μm, the directional coupler functions as a well-balanced directional coupler, but when δt is 2 μm and A deviation of 3 μm indicates that the balance is poor.

As described above, the conventional multilayered 90-degree distribution / combination circuit has a problem that the dielectric film thickness deviates from a design value due to the process or the like, thereby deteriorating the characteristics of the distribution / combination circuit. Was. Therefore, it has been difficult to economically produce a distribution / synthesis circuit having good characteristics.

The present invention has been made in view of such conventional problems,
In a directional coupler of a broad-side coupling formed by using a high-frequency circuit technology of a multilayer structure in which a dielectric film and a conductor are laminated in multiple layers on a semiconductor substrate or a dielectric substrate, a dielectric film thickness between coupling lines It is an object of the present invention to provide a high-frequency 90-degree distribution / synthesis circuit that can correct a coupling degree shift generated due to a variation in the high-frequency distribution and can be economically manufactured.

[0012]

According to the invention, the above-mentioned object is solved by the means described in the claims.

That is, the first aspect of the present invention is a high frequency circuit having a multilayer structure in which a dielectric film and a conductor are laminated in multiple layers on a semiconductor substrate or a dielectric substrate.
A transmission line of 波長 wavelength is formed, and the transmission line of １ ／ wavelength functions as a directional coupler. In a high-frequency 90 ° distribution / combination circuit, a resistance value is changed between a coupling terminal and a ground conductor. This is a high-frequency 90-degree distribution / synthesis circuit to which a register (hereinafter referred to as a variable resistor) that can be connected is connected.

According to a second aspect of the present invention, in the high frequency 90-degree distribution / combination circuit according to the first aspect, the variable resistor is formed by using an FET, a heterojunction transistor, or a bipolar transistor.

According to a third aspect of the present invention, in the high frequency 90-degree distribution / combination circuit according to the first aspect, the variable resistor is formed using a diode.

[0016] A fourth aspect of the present invention, a semiconductor substrate or a dielectric layer and a conductor on a dielectric substrate in the high-frequency circuit of the multi-layer structure obtained by laminating a multilayer, quarter wave on different dielectric layer In a high frequency 90-degree distribution / combination circuit in which transmission lines are formed and the quarter-wavelength transmission line functions as a directional coupler, a variable resistor is connected between a coupling terminal and a ground conductor. a high-frequency 90 degree distributor combining circuit connected to the capacitor (hereinafter referred to as variable capacitor) capable of changing the capacitance value between the transmission line quarter wavelength of the two formed on different dielectric layer.

According to a fifth aspect of the present invention, in the high frequency 90-degree distribution / synthesis circuit according to the fourth aspect, the position where the variable capacitance is connected is between the central portions of the two quarter-wavelength transmission lines. It is what was constituted.

[0018] The invention of claim 6 includes a semiconductor substrate, or a dielectric film and the conductor on the dielectric substrate in the high-frequency circuit of the multi-layer structure obtained by laminating a multilayer, quarter wave on different dielectric layer A transmission line is formed, and the 1/4 wavelength transmission line functions as a directional coupler in a high frequency 90-degree distribution / combination circuit.
A high frequency of 90 degrees, in which a variable capacitor is connected between transmission lines of 伝 送 wavelength and a variable resistor is connected between a connection point between the transmission line of 波長 wavelength having a coupling terminal and the variable capacitor and a ground conductor. This is a distribution / synthesis circuit.

According to a seventh aspect of the present invention, in the high frequency 90-degree distribution / synthesis circuit according to any one of the fourth to sixth aspects, at least one of the variable resistor and the variable capacitor is FE.
It is formed by using a T, a heterojunction transistor, or a bipolar transistor.

According to an eighth aspect of the present invention, in the high frequency 90-degree distribution / synthesis circuit according to any one of the fourth to sixth aspects, at least one of the variable resistor and the variable capacitor is formed using a diode. Things.

According to a ninth aspect of the present invention, there is provided a high frequency circuit having a multilayer structure in which a dielectric film and a conductor are laminated in multiple layers on a semiconductor substrate or a dielectric substrate. Are formed, and the 該 wavelength transmission line functions as a directional coupler in a high-frequency 90 ° distribution / combination circuit.
This is a high-frequency 90-degree distribution / combination circuit in which the gate of T is connected, the source of the FET is connected to a 波長 wavelength transmission line having a coupling terminal, and the drain of the FET is connected to a ground conductor.

According to a tenth aspect of the present invention, in the high frequency 90 degree distribution / synthesis circuit according to the ninth aspect, a fixed resistor is connected between a quarter-wave transmission line having a coupling terminal and a ground conductor. is there.

According to an eleventh aspect of the present invention, in the high frequency 90 degree distribution / synthesis circuit according to the ninth or tenth aspect,
The ET is formed using a heterojunction transistor or a bipolar transistor.

[0024]

[0025]

In the high frequency 90 ° distribution / combination circuit of the present invention, since a variable capacitor is connected between the λ / 4 lines constituting the distribution / combination circuit, the dielectric film thickness between the λ / 4 lines is equal to the design value. By increasing the capacitance value of the variable capacitor with respect to the deterioration of the coupling characteristics due to the thicker structure, the coupling characteristics of the distribution / synthesis circuit can be corrected.

FIG. 14 shows that the difference in the dielectric film thickness caused the shift of 90 degrees.
Characteristic impedance of the degree distribution combining circuit is equal to the design value Z _even
= 121Ω, Z _odd = 21Ω, while Z _even = 100
The relationship between the degree of coupling and the variable capacitance value when Ω, Z _odd = 21Ω is shown.

By increasing the variable capacitance, S ₂₁ ,
The value of S ₃₁ is equal, the balance of the binding properties are improved. As described above, λ constituting the 90-degree distribution / combination circuit
By connecting a variable capacitor between the / 4 lines, even if the dielectric film thickness between the λ / 4 lines deviates from the design value, the coupling characteristics can be corrected and a well-balanced distribution / synthesis circuit is realized. it can.

Further, the high frequency 90 ° distribution / combination circuit of the present invention may employ a configuration in which a variable resistor is connected between the coupling terminal of the distribution / combination circuit and the ground conductor. In this configuration, the variable resistor is adjusted so that the resistance value is reduced in response to the deterioration of the coupling characteristic due to the dielectric film thickness between the λ / 4 lines being formed thinner than the design value, thereby distributing. The coupling characteristics of the combining circuit can be corrected.

FIG. 15 shows that the characteristic impedance of the 90-degree distribution / combination circuit is changed to the design value, Z _even , due to the deviation of the dielectric film thickness.
= 121Ω, Z _odd = 21Ω, while Z _even = 141
The relationship between the degree of coupling and the resistance value when Ω, Z _odd = 21Ω is shown. By reducing the resistance value,
The values of S ₂₁ and S ₃₁ are equal, and the coupling characteristics are well balanced.

By connecting a variable resistor between the coupling terminal of the 90-degree distribution / combination circuit and the ground conductor in this manner, the coupling characteristics can be improved even when the dielectric film thickness between the λ / 4 lines deviates from the design value. The distribution can be corrected and a well-balanced distribution / synthesis circuit can be realized.

[0031]

FIG. 1 is a diagram showing a first example of an embodiment of a high-frequency 90-degree distribution / synthesis circuit according to the present invention.
(A) is a perspective view, and (b) shows an equivalent circuit. In FIG. 16A, as in the case of FIG. 16 described above, each of the dielectric films 5-1 and 5-2 is expressed as a transparent one so that the structure can be easily understood. The same applies to other perspective views described below.

In FIG. 1, a ground conductor 3 and a variable capacitor 6 are formed on a semiconductor substrate 4, and a dielectric film 5-1 is formed on the ground conductor 3 and the variable capacitor 6. Further, the dielectric film 5
The λ / 4 line 2 and the dielectric film 5-2 are formed on −1, and the λ / 4 line 1 is formed on the dielectric film 5-2. The variable capacitors 6 are connected to the λ / 4 lines 1 and 2 via the through holes 7 between the terminals 1 and 3 at positions L ₁ away from the terminals. The variable capacitor 6 is a bipolar transistor, F
It may be constituted by an ET, a heterojunction transistor, or a diode.

FIG. 2 shows the coupling characteristics of the first embodiment of the present invention shown in FIG. In the figure,
The value before correction indicated by the broken line indicates the coupling characteristic of the conventional distribution / synthesis circuit to which no variable capacitance is connected. That is, the dielectric film thickness between the λ / 4 lines 1 and 2 is shifted to a side thicker than the design value, and the balance is lost.

The value after the correction shown by the solid line is the value of the first example, when the variable capacitance value is 0.14 pF. The corrected value is, S _21, S ₃₁ are coincident at the center frequency, it can be seen that the balance of the distributing and combining circuit is recovering. FIG.
Indicates the phase difference at this time. Nearly 9 at center frequency
The phase difference of 0 degree is maintained, and the effect of connecting the variable capacitor is hardly recognized.

The dimensions of the 90-degree distribution / combination circuit are w ₁ = 8 μm, w ₂ = 10 μm, and L ₁ = λ / 8. As these results show, the first example of the present invention is:
By changing the value of the variable capacitance, it is possible to correct the characteristic of the distribution / synthesizing circuit, which is deviated from the design value due to the influence of the manufacturing process or the like, and is out of balance.

FIG. 4 is a diagram showing a second example of the embodiment of the present invention, and shows an equivalent circuit of a high-frequency 90-degree distribution / synthesis circuit. In the present example, unlike the first example, a variable resistor 8 was connected between the coupling terminal and the ground conductor instead of a variable capacitor (in FIG.
And output to the terminal 3). Further, the variable resistor 8 may be configured by a bipolar transistor, an FET, a hetero-coupled transistor, a diode, or the like.

FIG. 5 shows the coupling characteristics of the second embodiment of the present invention. The value before correction shown by the broken line is
10 shows the coupling characteristics of a conventional distribution / synthesis circuit to which no variable resistor is connected. In other words, the dielectric film thickness between the λ / 4 lines 1 and 2 shifts to a side thinner than the design value, and the balance is lost.

The corrected value shown by the solid line is the value of the second example, and corresponds to the case where the resistance value of the variable resistor is 300Ω. The corrected value is, S _21, S ₃₁ are coincident at the center frequency, it can be seen that the balance of the distributing and combining circuit is recovering. FIG. 6 shows the phase difference at this time. A phase difference of about 90 degrees is maintained at the center frequency, and the effect of connecting the variable resistor is hardly recognized.

The dimensions of the 90-degree distribution / combination circuit are w ₁ = 8 μm, w ₂ = 10 μm, and L ₁ = λ / 8. As shown by these results, in this example, by changing the value of the variable capacitance,
It is possible to correct the characteristics of the distributing / combining circuit that has deviated from the design value and has become poorly balanced.

FIG. 7 is a diagram showing a third example of the embodiment of the present invention, and shows an equivalent circuit of a high-frequency 90-degree distribution / synthesis circuit. This example has the configuration of the first example described above,
Furthermore, a variable resistor 8 is connected between the coupling terminal and the ground conductor (in FIG. 7, a signal is input from terminal 1 and
And output to the terminal 3). The variable capacitor 6 and the variable resistor 8 are bipolar transistors, FE
T, a hetero-coupled transistor, a diode, or the like.

In the third example, since both the variable capacitance and the variable resistance are connected, for example, the dielectric film thickness between the λ / 4 lines 1 and 2 shifts to a side thinner than the design value, and the balance is reduced. In the case of deviation, by changing the value of the variable capacitance, the degree of coupling of the distribution / synthesis circuit can be corrected, and good characteristics can be obtained.

Conversely, when the dielectric film thickness is shifted to a side thicker than the designed value and the balance is lost, the coupling of the distribution synthesizing circuit is corrected by changing the value of the variable resistor to obtain good characteristics. be able to. That is, according to the distribution / synthesis circuit of the third example, the circuit characteristics can be corrected regardless of the direction of the deviation from the design value.

FIG. 8 is a diagram showing a fourth example of the embodiment of the present invention, and shows an equivalent circuit of a high-frequency 90-degree distribution / synthesis circuit. This example has the configuration of the first example described above,
Further, a variable resistor 8 is connected between the terminal of the variable capacitor 6 connected to the λ / 4 line having the coupling terminal and the ground conductor (in FIG. 8, a signal is input from the terminal 1 and the terminals 2 and 3 are connected). Is output to the user).

Further, as compared with the third example, since the variable capacitor 6 and the variable resistor 8 are directly connected,
And the variable resistor 8 can be arranged close to each other,
Wiring and the like for controlling the values of the variable capacitor 6 and the variable resistor 8 can be integrated. The variable capacitor 6 and the variable resistor 8 are bipolar transistors, FETs, hetero-coupled transistors,
Alternatively, it may be constituted by a diode or the like.

FIG. 9 shows the coupling characteristics of the fourth example of the embodiment of the present invention. The value before correction shown by the broken line is
10 shows coupling characteristics of a conventional distribution / synthesis circuit to which no variable capacitance and variable resistance are connected. That is, the dielectric film thickness between the λ / 4 lines 1 and 2 is shifted to a side thicker than the design value, and the balance is lost.

The corrected value shown by the solid line is the value of the fourth example, and the variable capacitance is 0.14 pF and the variable resistance is 5000
Ω. The corrected value is, S _21, S ₃₁ are coincident at the center frequency, it can be seen that the balance of the distributing and combining circuit is recovering.

FIG. 10 shows the coupling characteristics of the fourth example of the embodiment of the present invention. The value before correction indicated by the broken line indicates the coupling characteristic of the conventional distribution / synthesis circuit to which the variable capacitance and the variable resistance are not connected. That is, λ /
This is a state in which the dielectric film thickness between the four lines 1 and 2 shifts to a side thinner than the design value, and the balance is lost.

The value after correction shown by the solid line is the value of the fourth example, and the variable resistance value is 200Ω and the variable capacitance value is 0.02p.
It is the time of F. The corrected value is, S _21, S ₃₁ are coincident at the center frequency, it can be seen that the balance of the distributing and combining circuit is recovering. The dimensions of the 90-degree distribution / combination circuit are as follows: w ₁ = 8 μm, w ₂ = 10 μm, L ₁ = λ / 8
It is.

In the fourth example, since both the variable capacitance and the variable resistance are connected, the case where the dielectric film thickness between the λ / 4 lines 1 and 2 shifts to a side thinner than the design value and the balance is lost. By changing the value of the variable capacitance, the degree of coupling of the distribution / synthesis circuit can be corrected, and good characteristics can be obtained. Conversely, when the dielectric film thickness is shifted to a side thicker than the design value and the balance is lost, the degree of coupling of the distribution / synthesis circuit can be corrected by changing the value of the variable resistor, and good characteristics can be obtained. .

That is, the distribution / combination circuit of the fourth example can correct the circuit characteristics regardless of the direction of deviation from the design value. Further, since the variable capacitor and the variable resistor are arranged close to each other, a circuit for controlling these values can be integrated and configured, so that the area of the entire circuit can be reduced.

FIG. 11 is a diagram showing a fifth example of the embodiment of the present invention, and shows an equivalent circuit of a high-frequency 90-degree distribution / synthesis circuit. This example is characterized in that the variable capacitance and the variable resistance of the fourth example described above are replaced with a common drain FET. That is, the gate terminal of the FET 30 is connected to the λ / 4 line 1, and the source terminal of the FET 30 is connected to the λ / 4 line 2. The drain terminal of the FET 30 is grounded via the capacitor 21.

The control terminal 31 is connected to the gate terminal of the FET 30 via the resistor 10, and the control terminal 32 is connected to the drain terminal. A resistor 11 is connected between the terminal 4 of the λ / 4 line 2 and the ground conductor. The resistor 11 is
It is inserted for the purpose of grounding the source of the FET 30. If the resistance value is too low, the balance of the coupling characteristics of the distribution / synthesis circuit is lost.
It is desirable that this is the case.

The upper limit of the value of the resistor 11 may be in a range in which stable operation of the FET 30 can be ensured. Usually, the upper limit of the resistor 11 is sufficiently tolerable (about 10 KΩ). FIG. 12 is a simplified equivalent circuit diagram of the FET 30 in FIG.
C _gs and the source-drain resistance are indicated by R _ds .

In this example, a bias voltage is applied to the control terminals 31 and 32 of the common drain FET 30,
By changing the values of the gate-source capacitance C _gs and the source-drain resistance R _ds of 0, the deviation from the design value of the composite distribution circuit can be corrected.

That is, the distribution / synthesis circuit of this example is composed of an FET
Since the gate-source capacitance C _gs and the source-drain resistance R _ds are used as a variable capacitor and a variable resistor, only one element is required to constitute the variable resistor and the variable capacitor, and the circuit can be downsized. Note that the FET 30 may be configured by a bipolar transistor or a hetero-coupled transistor.

FIGS. 13A and 13B are views showing a sixth example of the embodiment of the present invention, wherein FIG. 13A is a perspective view, and FIG. 13B is a sectional view taken along line BB in FIG. . In the figure, a variable capacitor 6 is formed on a semiconductor substrate 4, and a dielectric film 5-3 is formed on the semiconductor substrate 4 and the variable capacitor 6. The ground conductor 3 is formed on the dielectric film 5-3.

A dielectric film 5-1 is formed on the ground conductor 3, and a λ / 4 line 2 and a dielectric film 5-2 are formed on the dielectric film 5-1. The λ / 4 line 1 is formed at the end. The variable capacitors 6 are connected to the λ / 4 lines 1 and 2 via the through holes 7 between the terminals 1 and 3 at positions L ₁ away from the terminals.

The variable capacitor 6 may be constituted by a bipolar transistor, FET, heterojunction transistor, diode, or the like. This embodiment differs from the first embodiment in that a dielectric film 5-3 is formed between the semiconductor substrate 4 and the ground conductor 3.

With this configuration, the λ / 4 line is shielded from the variable capacitor 6 by the ground conductor 3, so that the λ / 4 line is connected to the variable capacitor as compared with the first example. Since the distance of the transmission path can be shortened, designability can be improved and the size can be reduced.

[0060]

As described above, the high frequency 9 according to the present invention is used.
According to the 0-degree distribution / combination circuit, it is possible to correct the deviation of the balance of the distribution / combination circuit due to the variation of the dielectric film thickness in the manufacturing process. Therefore, there is an advantage that a distribution circuit as designed can be easily obtained, and a high-frequency 90-degree distribution / combination circuit using a multilayered high-frequency circuit technique can be economically produced.

[Brief description of the drawings]

FIG. 1 is a diagram showing a first example of an embodiment of the present invention.

FIG. 2 is a diagram illustrating coupling characteristics of a first example of an embodiment of the present invention.

FIG. 3 is a diagram illustrating phase characteristics of a first example of the embodiment of the present invention.

FIG. 4 is a diagram showing a second example of the embodiment of the present invention.

FIG. 5 is a diagram showing coupling characteristics of a second example of the embodiment of the present invention.

FIG. 6 is a diagram illustrating phase characteristics of a second example of the embodiment of the present invention.

FIG. 7 is a diagram showing a third example of the embodiment of the present invention.

FIG. 8 is a diagram showing a fourth example of the embodiment of the present invention.

FIG. 9 is a diagram showing coupling characteristics of a fourth example of the embodiment of the present invention.

FIG. 10 is a diagram illustrating a coupling characteristic according to a fourth example of the embodiment of the present invention;

FIG. 11 is a diagram showing a fifth example of an embodiment of the present invention.

FIG. 12 is a simplified equivalent circuit diagram of the FET 30 of FIG. 11;

FIG. 13 is a diagram showing a sixth example of the embodiment of the present invention.

FIG. 14 is a diagram illustrating a relationship between a coupling degree and a capacitance value of the high-frequency 90-degree distribution / synthesis circuit.

FIG. 15 is a diagram illustrating a relationship between a coupling degree and a resistance value of the high-frequency 90-degree distribution / synthesis circuit.

FIG. 16 is a diagram showing an example of a conventional high-frequency 90-degree distribution / synthesis circuit.

FIG. 17 is a diagram showing a coupling degree of a conventional high frequency 90-degree distribution / synthesis circuit.

[Explanation of symbols]

 1, λ / 4 line 3 Ground conductor 4 Semiconductor substrate 5-1 to 5-3 Dielectric film 6 Variable capacitance 7 Through hole 8 Variable resistance 10, 11 Resistance 20, 21 Capacity 30 FET 31, 32 Control terminal

Continuation of front page (56) References JP-A-57-180202 (JP, A) JP-A-5-3713 (JP, A) JP-A-5-14019 (JP, A) JP-A-4-239175 (JP) JP-A-3-76402 (JP, A) JP-A-59-99825 (JP, A) JP-A-54-51446 (JP, A) JP-A-56-62402 (JP, A) 58-50502 (JP, U) (58) Fields investigated (Int. Cl. ⁷ , DB name) H01P 5/18 H01P 5/04 603

Claims (11)

(57) [Claims] 1. A high-frequency circuit having a multilayer structure in which a dielectric film and a conductor are laminated in multiple layers on a semiconductor substrate or a dielectric substrate, wherein transmission lines of 波長 wavelength are formed on different dielectric films, respectively. In the high-frequency 90-degree distribution / combination circuit in which the 1/4 wavelength transmission line functions as a directional coupler , a resistance value is changed between the coupling terminal and the ground conductor.
A high-frequency 90-degree distribution / synthesis circuit to which a register (hereinafter referred to as a variable resistor) that can be connected is connected. 2. A variable resistor comprising an FET, a heterojunction transistor,
Formed using a transistor or bipolar transistor
And, frequency 90 degree distributor synthesis circuit according to claim 1. 3. The variable resistor is formed using a diode.
And, frequency 90 degree distributor synthesis circuit according to claim 1. 4. A semiconductor substrate, or a dielectric film and the conductor on the dielectric substrate in the high-frequency circuit of the multi-layer structure formed by laminating the multilayer transmission line quarter wavelength on different dielectric film formed, respectively A high-frequency 90-degree distribution / combination circuit in which the quarter-wave transmission line functions as a directional coupler, wherein a variable resistor is connected between the coupling terminal and the ground conductor, and characterized in that connecting the capacitor (hereinafter referred to as variable capacitor) capable of changing the capacitance value between the two quarter-wave transmission line formed <br/> high frequency 90-degree distributor synthesis circuit. 5. The connection position of the variable capacitance is 1 / two of the two.
Between the central portions of each of the four wavelength transmission lines.
Item 9. A high-frequency 90-degree distribution / synthesis circuit according to item 4 . 6. The semiconductor substrate or a dielectric layer and a conductor on a dielectric substrate in the high-frequency circuit of the multi-layer structure formed by laminating the multilayer transmission line quarter wavelength on different dielectric film formed, respectively A high-frequency 90-degree distribution / combination circuit in which the quarter-wave transmission line functions as a directional coupler, wherein a variable capacitance is provided between the two quarter-wave transmission lines formed on the different dielectric films. And a variable resistor is connected between a grounding conductor and a connection point between the quarter-wave transmission line having a coupling terminal and the variable capacitor, and a grounding conductor. 7. A variable resistor and / or a variable capacitor.
With a FET, heterojunction transistor, or bipolar
7. The semiconductor device according to claim 4, wherein said transistor is formed by using a transistor.
The high-frequency 90-degree distribution / combination circuit according to any one of the above. 8. At least one of a variable resistor and a variable capacitor
Is formed using a diode.
The high-frequency 90-degree distribution / combination circuit according to any one of the above. 9. A dielectric substrate on a semiconductor substrate or a dielectric substrate.
Multi-layered high-frequency circuit with multiple layers of body film and conductor
And transmission lines of 1/4 wavelength on different dielectric films
The １ ／ wavelength transmission line is formed with a directional coupler.
In the high frequency 90-degree distribution / synthesis circuit that functions as
Connect the gate of the FET to the 1/4 wavelength transmission line with the terminal.
To a 1/4 wavelength transmission line with a coupling terminal
Connect the source of the FET and connect the drain of the FET to the ground conductor
And a high-frequency 90-degree distribution / combination circuit. 10. A 1/4 wavelength coupling terminal having a coupling terminal.
When a fixed resistor is connected between the transmission line and the ground conductor,
The high-frequency 90-degree distribution / synthesis circuit according to claim 9 . 11. An FET comprising: a heterojunction transistor;
Or, formed using a bipolar transistor
The high frequency 90-degree distribution / combination circuit according to claim 9 or 10 .