JP3189812B2 - Burn-in test jig for semiconductor device and burn-in test method - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a burn-in test jig and a burn-in test method used for performing a burn-in test on a semiconductor device, particularly a ball grid array type semiconductor device using an anisotropic conductive sheet. Things.

[0002]

2. Description of the Related Art Conventionally, as a method of selecting a semiconductor device having a ball grid (hereinafter referred to as BGA), a method of 125 ° C.
At a high temperature of 8 to 16 hours (conditions differ depending on the semiconductor device), applying a potential to increase the load on the BGA, and forcibly accelerating the failure to eliminate the initial failure. Test)
It is carried out.

A problem in performing the burn-in test is deformation of the ball grid after the burn-in test. The BGA has a tendency to increase the number of pins in terms of functional improvement, and accordingly, the pitch between the pitches has been reduced from 0.8 mm pitch to 0.5 mm pitch. In the conventional 0.8 mm pitch BGA, the test was performed by the pin method in which pins are applied. However, in the case of the 0.5 mm pitch BGA having a narrower pitch, there is a problem of cost and interference between adjacent pins in the conventional pin method. Therefore, an anisotropic conductive sheet is used. In the burn-in test using such an anisotropic conductive sheet, for example, as shown in FIG. 5, an anisotropic conductive sheet 21 is mounted on an extension board 20 and a BGA type After the semiconductor devices 22 are opposed to each other, the respective ball grids 23 of the BGA type semiconductor device 22 are pressed against the electrode portions 24 provided on the anisotropic conductive sheet 21 to make the electrode portions 24 conductive. The connection between each ball grid 23 and the expansion board 20 is established.

[0004]

The use of the anisotropic conductive sheet system makes it possible to make contact with a lower load than the pin system, but still has the problem of deformation of the solder balls (ball grid). Remains. Here, if the solder ball is SnPb eutectic solder, the solder ball is deformed by a high temperature and a load, and when the mounting machine recognizes the ball appearance and locates the ball, the appearance defect due to the deformation of the ball becomes a problem. In addition, as a countermeasure against deformation of the solder balls, high-temperature solder or metal core solder balls are used instead of eutectic solder, or a hard metal core is plated to avoid this problem. Considering the properties, eutectic solder is good, and it is desired to use this eutectic solder as much as possible.

The present invention has been made in view of such a conventional problem. Even when eutectic solder is used to ensure the mountability of a semiconductor device, the present invention is not limited to a burn-in test for the semiconductor device. It is an object of the present invention to provide a burn-in test jig and a burn-in test method for a semiconductor device which can suppress the deformation of a solder ball in the above.

[0006]

According to a first aspect of the present invention, there is provided a burn-in test jig for a semiconductor device, comprising: a semiconductor device having a ball grid; A jig for a burn-in test used when performing a burn-in test using a sheet, wherein the jig is interposed between the semiconductor device and the anisotropic conductive sheet, and is an insulating material on which the semiconductor device is mounted. a substrate made of, provided integrally through the substrate, the Borugu
A conductive material into which the lid is inserted and whose outer shape is constrained
This contact consists of a hemispherical shell-shaped contact
The tact depth is smaller than the height of the ball grid.
Shallowly formed and the bottom of the contact part
Ball grid inserted into this contact part
A through-hole is formed to expose a front end of the anisotropic conductive sheet, and the ball grid is pressed against an electrode portion provided on the anisotropic conductive sheet via the contact portion. The semiconductor according to claim 2 of the present invention.
The jig for a burn-in test of a body device according to claim 1,
In the substrate, through holes are formed in the same arrangement as the ball grid.
The contact part is press-fitted and fixed in these through holes.
It is characterized by having been done . According to claim 3 of the present invention
The burn-in test method for a semiconductor device
Electrodes on an anisotropic conductive sheet
Semiconductor that performs a burn-in test by pressing against the part
A burn-in test method for an apparatus, comprising:
Cover with a cap made of a conductive material.
The electrode of the anisotropic conductive sheet is provided through the cap.
To make the electrode part conductive.
Sign . The bar of the semiconductor device according to claim 4 of the present invention.
In the intest method, the cap according to claim 3,
Insulation material corresponding to the arrangement of the ball grid
It is characterized in that it is held in an array.

[0007]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of a burn-in test jig according to the present invention will be described below with reference to FIGS. In these figures, reference numeral 1 denotes a jig for a burn-in test (hereinafter abbreviated as a jig) according to the present embodiment, and this jig 1 is made of an insulating material such as glass epoxy resin as described in detail in FIG. It is composed of a substrate 2 made of a material and a cap-shaped contact portion 3 which penetrates the substrate 2 and is integrally mounted and into which a ball grid 8 of a BGA type semiconductor device 7 is inserted as described later. The substrate 2
Has a large number of through-holes 2a formed in the same arrangement as the arrangement of the ball grids 8 of the BGA type semiconductor device 7, and each of these through-holes 2a is provided with the contact portion 3a.
As shown in FIGS. 2 (b) and 2 (c), the contact portions 3 are press-fitted from one direction of the substrate 2 and fixed, so that these contact portions 3 are fixed to the substrate 2 as shown in FIG. 2 (a). Fixed in an array. The contact portion 3 is formed in a hemispherical shell shape by, for example, copper having excellent conductivity and good workability and appropriate rigidity.
At the bottom thereof, a through hole 3a through which the tip of the ball grid 8 is exposed is formed, and the depth of the contact portion 3 is formed to be slightly shallower than the height of the ball grid 8.

As shown in FIGS. 1 and 4, the jig 1 having the above-described structure is mounted so that each ball grid 8 of each BGA type semiconductor device 7 and each contact portion 3 are fitted.
It is mounted on the GA type semiconductor device 7 and, as shown in FIG. 1, is brought into contact with the anisotropic conductive sheet 4 provided on the extension board 9.

The anisotropic conductive sheet 4 is provided with electrode portions 5 having an arrangement equivalent to the arrangement of the ball grids 8 of the BGA type semiconductor device 7 as shown in FIG. Contains a large number of conductive particles 6,
When the electrode portion 5 is compressed and deformed, the conductive particles 6
They are brought into contact with each other to be brought into a conductive state.

The BGA type semiconductor device 7 is shown in FIG.
As shown in (a), when a load W is applied and the ball grid 8 and the contact portion 3 are pressed against the electrode portion 5 of the anisotropic conductive sheet 4, a part of the load W passes through the ball grid 8. The remaining portion of the load W acts on the electrode portion 5 via the substrate 2 and the contact portion 3 of the jig 1.

When a load is applied to the electrode portion 5 in this manner, the electrode portion 8 is deformed, and at the same time, as shown in FIG.
As shown in (c), when the internal conductive particles 6 come into contact with each other, the ball grid 8 is conducted to the expansion substrate 9 via the electrode portion 5, whereby the burn-in test of the BGA type semiconductor device 7 is performed. Is performed.

The BGA type semiconductor device 7
When sufficient load is applied to the electrode portion 5 to give sufficient deformation to the electrode portion 5,
The ball grid 8 is deformed after its tip is brought into contact with the inner surface of the tip of the contact portion 3, but excessive deformation of the ball grid 8 is prevented because a part of the load is supported by the jig. Is done. Alternatively, when the ball grid 8 is deformed, its outer shape is constrained by the contact portion 3, thereby preventing excessive deformation.

The various shapes, dimensions, and the like of the components shown in the above embodiment are merely examples, and can be variously changed based on design requirements and the like.

[0014]

Since the present invention is configured as described above, the following effects can be obtained. At the time of the burn-in test, even if a load is applied to the BGA type semiconductor device to sufficiently deform the electrode portion of the anisotropic conductive sheet and deform the ball grid, Excessive deformation of the ball grid can be prevented by the portion being supported by the jig, or excessive deformation can be prevented by restricting the outer periphery of the ball grid by the contact portion when the ball grid is deformed. .
Therefore, even if the eutectic solder which is easily deformed is used, the deformation of the ball grid at the time of the burn-in test can be suppressed to a small value, and the reliable burn-in test can be performed.

[Brief description of the drawings]

FIG. 1 is a schematic diagram of a burn-in test apparatus to which an embodiment of the present invention is applied.

FIG. 2 is a detailed view of a burn-in test jig according to an embodiment of the present invention.

FIG. 3 is an enlarged sectional view of a main part of an anisotropic conductive sheet used in one embodiment of the present invention.

FIG. 4 is a process diagram of a burn-in test according to an embodiment of the present invention.

FIG. 5 is a schematic diagram of a conventional burn-in test apparatus.

[Explanation of symbols]

 Reference Signs List 1 jig (for burn-in test) 2 substrate 2a through hole 3 contact part 3a through hole 4 anisotropic conductive sheet 5 electrode part 6 conductive particles 7 BGA type semiconductor device 8 ball grid 9 expansion substrate 20 expansion substrate 21 anisotropic conductive Sheet 22 BGA type semiconductor device 23 Ball grid 24 Electrode W Load

──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. ⁷ , DB name) G01R 31/26 H01L 21/60 H01L 21/66 H01L 23/34 H01R 33/76

Claims (4)

(57) [Claims] 1. A semiconductor device having a ball grid,
A burn-in test jig used when performing a burn-in test using an anisotropic conductive sheet, wherein the jig is interposed between the semiconductor device and the anisotropic conductive sheet, and the semiconductor device is mounted on the jig. A substrate made of an insulating material to be formed and the ball grid provided integrally with the substrate so as to penetrate the substrate.
Is made of a conductive material into which the outer shape is
This contact consists of a hemispherical shell-like contact
Part shallower than the height of the ball grid
And at the bottom of the contact portion,
Tip of ball grid inserted into this contact part
A through hole for exposing a portion of the semiconductor device , wherein the ball grid is pressed against an electrode portion provided on the anisotropic conductive sheet via the contact portion. Jig for burn-in test. 2. The same substrate as the ball grid is provided on the substrate.
Through holes are formed in an array, and the contact holes are formed in these through holes.
2. The method according to claim 1, wherein the first part is press-fitted and fixed.
A burn-in test jig for a semiconductor device as described in the above . 3. The semiconductor device according to claim 1, wherein the ball grid is anisotropically.
By pressing against the electrode section provided on the conductive sheet,
Burn-in test for semiconductor devices
A ball grid made of a conductive material.
Cover with the cap
To the electrode part of the anisotropic conductive sheet.
A semiconductor device having a pole portion in a conductive state.
-In-test method . 4. The cap is made of an insulating material.
It is necessary to keep the array corresponding to the ball grid array.
The burn-in test of the semiconductor device according to claim 3, wherein
Method .