JP3181443B2 - Graphite crucible for semiconductor single crystal growing equipment - Google Patents
Graphite crucible for semiconductor single crystal growing equipmentInfo
- Publication number
- JP3181443B2 JP3181443B2 JP19509093A JP19509093A JP3181443B2 JP 3181443 B2 JP3181443 B2 JP 3181443B2 JP 19509093 A JP19509093 A JP 19509093A JP 19509093 A JP19509093 A JP 19509093A JP 3181443 B2 JP3181443 B2 JP 3181443B2
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- graphite crucible
- graphite
- single crystal
- cylindrical member
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体単結晶育成装置
の黒鉛るつぼに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a graphite crucible for a semiconductor single crystal growing apparatus.
【０００２】[0002]
【従来の技術】半導体集積回路の基本材料であるシリコ
ン単結晶の製造方法の一つとして、るつぼ内の原料融液
から円柱状の単結晶を引き上げるチョクラルスキー法
（以下ＣＺ法という）が用いられている。ＣＺ法におい
ては、黒鉛るつぼ内に収容した石英るつぼに高純度の多
結晶シリコンを充填し、この多結晶シリコンを前記黒鉛
るつぼの外周を取り巻くように設けた黒鉛ヒータによっ
て加熱溶解した上、シードチャックに取り付けた種子結
晶を前記融液に浸漬し、シードチャックと黒鉛るつぼと
を同方向または逆方向に回転しつつシードチャックを引
き上げて、シリコン単結晶を成長させる。2. Description of the Related Art A Czochralski method (hereinafter referred to as a CZ method) for pulling a columnar single crystal from a raw material melt in a crucible is used as one of the methods for manufacturing a silicon single crystal which is a basic material of a semiconductor integrated circuit. Have been. In the CZ method, a quartz crucible contained in a graphite crucible is filled with high-purity polycrystalline silicon, and the polycrystalline silicon is heated and melted by a graphite heater provided around the periphery of the graphite crucible, and then the seed chuck is melted. Is immersed in the melt, and the seed chuck is pulled up while rotating the seed chuck and the graphite crucible in the same direction or in the opposite direction to grow a silicon single crystal.
【０００３】[0003]
【発明が解決しようとする課題】ＣＺ法によりシリコン
単結晶の育成を行う場合、石英るつぼは加熱されて軟化
し、一般に融液面から下の部分は黒鉛るつぼに密着し、
黒鉛るつぼと石英るつぼとの間に次に示すような化学反
応を起こす。 Ｃ＋ＳｉＯ2 →ＳｉＯ＋ＣＯ ２Ｃ＋ＳｉＯ→ＳｉＣ＋ＣＯ 上記化学反応の結果、黒鉛るつぼの減肉が進行するとと
もにＳｉＯガスが黒鉛るつぼに浸透して黒鉛るつぼをＳ
ｉＣ化する。また、ＳｉＯガスは黒鉛るつぼ下部の石英
るつぼとの密着部から黒鉛るつぼ上部に向かって流れ、
Ｃ，Ｋ，Ｃａ，Ｎａ等の不純物を融液に運ぶとともに、
上記反応を促進する。一般に黒鉛るつぼは２分割ないし
３分割されているが、ＳｉＣ化して体積膨張するため分
割方向に変形し、これに伴って石英るつぼが変形するの
で融液面位置が変化する。従って、融液の温度分布が変
化して引き上げ中の単結晶の成長が阻害され、単結晶の
熱履歴も変化する。黒鉛るつぼの変形はＳｉＯガスの流
れを促進し、上記反応が更に促進される。このような不
具合の発生を未然に防止するため、単結晶の引き上げ完
了のつど黒鉛るつぼの変形量を測定し、変形量が所定の
値を超える場合は黒鉛るつぼを新品と交換している。When a silicon single crystal is grown by the CZ method, the quartz crucible is heated and softened, and the portion below the surface of the melt generally adheres to the graphite crucible,
The following chemical reaction occurs between the graphite crucible and the quartz crucible. C + SiO 2 → SiO + CO 2C + SiO → SiC + CO As a result of the above-mentioned chemical reaction, the thinning of the graphite crucible progresses, and at the same time, SiO gas penetrates the graphite crucible and the graphite crucible becomes S.
Convert to iC. In addition, the SiO gas flows from the contact portion between the lower part of the graphite crucible and the quartz crucible toward the upper part of the graphite crucible,
While carrying impurities such as C, K, Ca, and Na to the melt,
Promotes the above reaction. In general, a graphite crucible is divided into two or three parts. However, the graphite crucible is deformed in the dividing direction due to SiC and volume expansion, and the quartz crucible is deformed accordingly, so that the melt surface position changes. Therefore, the temperature distribution of the melt changes to hinder the growth of the single crystal during pulling, and the heat history of the single crystal also changes. The deformation of the graphite crucible promotes the flow of the SiO gas, and the above reaction is further promoted. In order to prevent such a problem from occurring, the deformation amount of the graphite crucible is measured each time the single crystal is pulled up, and if the deformation amount exceeds a predetermined value, the graphite crucible is replaced with a new one.
【０００４】黒鉛るつぼの体積膨張に基づく変形は黒鉛
るつぼの使用回数の増加に伴って増大し、これに伴って
単結晶の熱履歴の変動、不純物による単結晶化阻害も大
きくなるため、結果として黒鉛るつぼの使用回数が制限
され、コスト高を招く。本発明は上記従来の問題点に着
目してなされたもので、黒鉛るつぼの変形を抑えてＳｉ
Ｏガスの発生を減らし、黒鉛の減肉およびＳｉＣ化の進
行を抑制することができるような半導体単結晶育成装置
の黒鉛るつぼを提供することを目的としている。[0004] The deformation due to the volume expansion of the graphite crucible increases as the number of uses of the graphite crucible increases, and as a result, the thermal history of the single crystal fluctuates and the inhibition of single crystallization due to impurities also increases. The number of times the graphite crucible is used is limited, resulting in high costs. The present invention has been made in view of the above-mentioned conventional problems, and suppresses the deformation of a graphite crucible to reduce Si.
An object of the present invention is to provide a graphite crucible for a semiconductor single crystal growing apparatus capable of reducing the generation of O gas and suppressing the reduction in thickness of graphite and the progress of SiC.
【０００５】[0005]
【課題を解決するための手段】上記目的を達成するた
め、本発明に係る半導体単結晶育成装置の黒鉛るつぼ
は、垂直方向に少なくとも１本のスリットを有する円筒
状のるつぼ上部とるつぼ底部とに黒鉛るつぼを分割し、
前記るつぼ上部の外周の少なくともメルトレベルから下
の部分に炭素繊維強化炭素材からなる円筒部材を嵌装す
る構成とし、このような構成において、円筒部材の軸方
向長さを、るつぼ底部の上端からメルトレベルまでの高
さ以上としたことを特徴とする。また、垂直方向に少な
くとも１本のスリットを有する黒鉛るつぼをるつぼ受け
に載置し、前記るつぼ受けの上端に、前記黒鉛るつぼの
外周の少なくともメルトレベルから下の部分を取り巻く
炭素繊維強化炭素材からなる円筒部材を載置する構成と
してもよく、炭素繊維強化炭素材からなる円筒状のるつ
ぼ上部、または炭素繊維強化炭素材からなる円筒部材の
上端に黒鉛からなる円筒部材を継合して構成したるつぼ
上部を、黒鉛からなるるつぼ底部に嵌装してもよい。In order to achieve the above object, a graphite crucible of a semiconductor single crystal growing apparatus according to the present invention comprises a cylindrical crucible having at least one slit in a vertical direction and a cylindrical crucible bottom. Split the graphite crucible,
A configuration in which a cylindrical member made of carbon fiber reinforced carbon material is fitted to at least a portion below the melt level of the outer periphery of the crucible upper portion, and in such a configuration, the axial length of the cylindrical member is set from the upper end of the crucible bottom portion. It is characterized in that the height is higher than the melt level. Also, a graphite crucible having at least one slit in the vertical direction is placed on a crucible receiver, and at the upper end of the crucible receiver, a carbon fiber reinforced carbon material surrounding at least a portion below the outer periphery of the graphite crucible from a melt level. A cylindrical member made of graphite may be joined to an upper portion of a cylindrical crucible made of carbon fiber reinforced carbon material, or an upper end of a cylindrical member made of carbon fiber reinforced carbon material. The top of the crucible may be fitted to the bottom of a crucible made of graphite.
【０００６】[0006]
【作用】上記構成によれば、黒鉛るつぼの外周の一部、
少なくともメルトレベルから下の部分に炭素繊維強化炭
素材からなる円筒部材を嵌装し、あるいは少なくともメ
ルトレベルから下の部分を炭素繊維強化炭素材で構成し
たので、単結晶原料の溶解時および単結晶育成時に発生
する黒鉛るつぼの変形が前記円筒部材によって抑止さ
れ、ＳｉＯガスの発生を減らして黒鉛るつぼの減肉、Ｓ
ｉＣ化を低減することができるし冷却時の石英ルツボの
相対的膨張による破損を防止出来る。また、黒鉛るつぼ
の上部にスリットを設けてＳｉＣ化による体積膨張によ
る周方向の変形を吸収することにしたので、前記体積膨
張に伴う応力集中による黒鉛るつぼの破損防止が可能と
なる。According to the above construction, a part of the outer periphery of the graphite crucible,
At least a portion below the melt level is fitted with a cylindrical member made of carbon fiber reinforced carbon material, or at least a portion below the melt level is made of carbon fiber reinforced carbon material. The deformation of the graphite crucible generated during the growth is suppressed by the cylindrical member, the generation of SiO gas is reduced, and the thickness of the graphite crucible is reduced.
iC can be reduced, and breakage due to relative expansion of the quartz crucible during cooling can be prevented. In addition, a slit is provided at the upper part of the graphite crucible to absorb circumferential deformation due to volume expansion due to SiC, so that damage to the graphite crucible due to stress concentration due to the volume expansion can be prevented.
【０００７】[0007]
【実施例】以下に、本発明に係る半導体単結晶育成装置
の黒鉛るつぼの実施例について、図面を参照して説明す
る。図１は第１の発明および第２の発明の第１実施例を
示す黒鉛るつぼの模式的断面図、図２は図１の上面図で
ある。これらの図において、黒鉛るつぼは上下に分割さ
れ、ほぼ円筒状のるつぼ上部１をるつぼ底部２に載置す
る構造となっている。前記るつぼ上部１の内壁下端は曲
面形状を備え、るつぼ底部２の上面になめらかに継合す
る。また、るつぼ上部１には垂直方向に１本のスリット
３が設けられ、ＳｉＣ化に基づく応力集中および、冷却
時の石英ルツボの相対的膨張によるるつぼ上部１の破損
を防止することができるようになっている。るつぼ上部
１の外周面の一部とるつぼ底部２の上端外縁には切り欠
き部が設けられ、この切り欠き部に炭素繊維強化炭素材
からなる円筒部材４が嵌装されている。前記円筒部材４
の軸方向長さは、るつぼ上部１の軸方向長さの約１／２
であり、円筒部材４の上端はメルトレベルよりやや上方
に位置する。円筒部材４の肉厚はるつぼ上部１の肉厚の
１／４〜１／３である。炭素繊維強化炭素材は黒鉛に比
べて価格が高いため、黒鉛るつぼのコストが上昇する。
そのため、本実施例では円筒部材４の使用量を極力減ら
し、黒鉛るつぼの耐用寿命の延長による効果がコストの
上昇以上になるようにした。An embodiment of a graphite crucible of a semiconductor single crystal growing apparatus according to the present invention will be described below with reference to the drawings. FIG. 1 is a schematic sectional view of a graphite crucible showing the first embodiment of the first invention and the second invention, and FIG. 2 is a top view of FIG. In these figures, a graphite crucible is divided into upper and lower parts, and a substantially cylindrical crucible upper part 1 is placed on a crucible bottom part 2. The lower end of the inner wall of the crucible upper portion 1 has a curved surface shape and is smoothly joined to the upper surface of the crucible bottom portion 2. Further, a single slit 3 is provided in the crucible upper portion 1 in the vertical direction so as to prevent stress concentration based on SiC conversion and damage of the crucible upper portion 1 due to relative expansion of the quartz crucible during cooling. Has become. A cutout portion is provided at a part of the outer peripheral surface of the crucible upper portion 1 and at the outer edge of the upper end of the crucible bottom portion 2, and a cylindrical member 4 made of carbon fiber reinforced carbon material is fitted into the cutout portion. The cylindrical member 4
Is about の of the axial length of the upper crucible 1
The upper end of the cylindrical member 4 is located slightly above the melt level. The thickness of the cylindrical member 4 is １ ／ to ３ of the thickness of the crucible upper part 1. Since carbon fiber reinforced carbon materials are more expensive than graphite, the costs of graphite crucibles increase.
Therefore, in this embodiment, the usage of the cylindrical member 4 is reduced as much as possible, and the effect of extending the useful life of the graphite crucible is more than the increase in cost.
【０００８】この黒鉛るつぼは、るつぼ底部２の上端外
縁部に円筒部材４を載置した後、円筒部材４内にるつぼ
上部１を挿嵌することにより容易に組み立てることがで
きる。なお、るつぼ底部２はるつぼ受けと一体に構成さ
れ、るつぼ底部２はるつぼ軸５の上端に直接載置され
る。The graphite crucible can be easily assembled by placing the cylindrical member 4 on the outer edge of the upper end of the crucible bottom 2 and then inserting the crucible upper portion 1 into the cylindrical member 4. The crucible bottom 2 is integrally formed with the crucible receiver, and the crucible bottom 2 is directly mounted on the upper end of the crucible shaft 5.
【０００９】図３は第１の発明、第２の発明の第２実施
例を示す黒鉛るつぼの模式的断面図、図４は図３の上面
図で、炭素繊維強化炭素材からなる円筒部材４ａはるつ
ぼ上部１ａの軸方向長さ全部にわたって嵌装されてい
る。また、図５は第１の発明、第２の発明の第３実施例
を示す黒鉛るつぼの模式的断面図であるが、るつぼ上部
１ａは図３に示したものと同一であり、円筒部材４は図
１に示したものと同一である。これらの図において、る
つぼ上部１ａの肉厚は図１に示したるつぼ上部１の肉厚
の３／４〜２／３であり、外周面に切り欠き部を設けな
い。るつぼ上部１ａに設けるスリット３や、るつぼ上部
１ａとるつぼ底部２との継合面形状などは図１に示した
ものと同一である。[0009] Figure 3 is a first invention, a schematic cross-sectional view of the graphite crucible showing a second embodiment of the second invention, FIG 4 is a top view of FIG. 3, the cylindrical member 4a made of carbon fiber reinforced carbon material It is fitted over the entire length of the crucible upper part 1a in the axial direction. Further, FIG. 5 is the first invention, is a schematic cross-sectional view of the graphite crucible showing a third embodiment of the second invention, the crucible upper 1a is identical to that shown in FIG. 3, the cylindrical member 4 Are the same as those shown in FIG. In these figures, the thickness of the crucible upper portion 1a is 3/4 to 2/3 of the thickness of the crucible upper portion 1 shown in FIG. 1, and no cutout portion is provided on the outer peripheral surface. The slit 3 provided on the crucible upper portion 1a, the joint surface shape between the crucible upper portion 1a and the crucible bottom portion 2 and the like are the same as those shown in FIG.
【００１０】図６は第３の発明の実施例を示す黒鉛るつ
ぼの模式的断面図である。黒鉛るつぼ本体６は上記るつ
ぼ上部とるつぼ底部とを一体構成としたもので、円筒部
には垂直方向に１本のスリット３が設けられている。前
記黒鉛るつぼ本体６の底部を被包するように設けられた
黒鉛製のるつぼ受け７の上端に、炭素繊維強化炭素材か
らなる円筒部材４が載置され、黒鉛るつぼ本体６の中間
部を包囲している。この円筒部材４の軸方向長さは、黒
鉛るつぼ本体６の円筒部分の長さの約１／２である。FIG. 6 is a schematic sectional view of a graphite crucible showing an embodiment of the third invention . The graphite crucible main body 6 has the crucible upper part and the crucible bottom part integrally formed, and one cylindrical part 3 is provided with one slit 3 in the vertical direction. A cylindrical member 4 made of carbon fiber reinforced carbon material is placed on the upper end of a graphite crucible receiver 7 provided so as to cover the bottom of the graphite crucible body 6, and surrounds an intermediate portion of the graphite crucible body 6. are doing. The axial length of the cylindrical member 4 is about half the length of the cylindrical portion of the graphite crucible body 6.
【００１１】図７は第４の発明の第１実施例を示す黒鉛
るつぼの模式的断面図である。この場合、るつぼ本体は
上下に分割されているが、るつぼ上部は炭素繊維強化炭
素材からなる円筒部材４ａのみで構成され、るつぼ受け
の機能を兼ねる黒鉛製のるつぼ底部２ａの上端外縁に載
置されている。円筒部材４ａの肉厚は、図１に示したる
つぼ上部１の肉厚の１／４〜１／３であり、スリットは
設けない。FIG. 7 is a schematic sectional view of a graphite crucible showing a first embodiment of the fourth invention . In this case, the crucible body is divided into upper and lower parts, but the upper part of the crucible is composed only of the cylindrical member 4a made of carbon fiber reinforced carbon material, and is placed on the outer edge of the upper end of the graphite crucible bottom 2a also serving as a crucible receiver. Have been. The thickness of the cylindrical member 4a is 1/4 to 1/3 of the thickness of the upper portion 1 of the crucible shown in FIG. 1, and no slit is provided.
【００１２】図８は第４の発明の第２実施例を示す黒鉛
るつぼの模式的断面図で、図７に示した炭素繊維強化炭
素材のみで構成されたるつぼ上部を、黒鉛と炭素繊維強
化炭素材とで構成したものである。すなわち、るつぼ受
けの機能を兼ねるるつぼ底部２ａの上端外縁に炭素繊維
強化炭素材からなる円筒部材４ｂが載置され、この円筒
部材４ｂの上端に黒鉛製の円筒部材４ｃが継合されてい
る。前記円筒部材４ｂ，４ｃの軸方向長さはほぼ等し
い。また、円筒部材４ｂ，４ｃにはスリットを設けな
い。FIG. 8 is a schematic cross-sectional view of a graphite crucible showing a second embodiment of the fourth invention . The upper part of the crucible made of only carbon fiber reinforced carbon material shown in FIG. It is composed of carbon material. That is, a cylindrical member 4b made of carbon fiber reinforced carbon material is placed on the outer edge of the upper end of the crucible bottom 2a also serving as a crucible receiver, and a cylindrical member 4c made of graphite is joined to the upper end of the cylindrical member 4b. The axial lengths of the cylindrical members 4b and 4c are substantially equal. Further, no slit is provided in the cylindrical members 4b and 4c.
【００１３】[0013]
【発明の効果】以上説明したように本発明によれば、黒
鉛るつぼの外周の一部、少なくともメルトレベルから下
の部分に炭素繊維強化炭素材からなる円筒部材を嵌装
し、あるいは少なくともメルトレベルから下の部分を炭
素繊維強化炭素材で構成して黒鉛るつぼを強化すること
にしたので、単結晶原料の溶解時および単結晶育成時に
発生する黒鉛るつぼの変形が抑止されるとともに、Ｓｉ
Ｏガスの発生を減らして黒鉛るつぼの減肉、ＳｉＣ化を
低減することができるし冷却時に石英ルツボの相対的膨
張による破損を防止出来る。また、黒鉛るつぼの上部に
スリットを設けてＳｉＣ化による体積膨張を吸収するこ
とにしたので、前記体積膨張に伴う応力集中による黒鉛
るつぼの破損防止が可能となる。従って、引き上げ単結
晶の品質を維持するとともに黒鉛るつぼの耐用寿命を延
長させることができる。本発明では、黒鉛に比べて高価
な炭素繊維強化炭素材の使用量を必要最小限に抑えたの
で、黒鉛るつぼのコスト上昇を上回る効果が得られる。As described above, according to the present invention, a cylindrical member made of carbon fiber reinforced carbon material is fitted on a part of the outer periphery of the graphite crucible, at least a part below the melt level, or at least the melt level. The lower part is made of carbon fiber reinforced carbon material to strengthen the graphite crucible, so that the deformation of the graphite crucible generated at the time of melting the single crystal raw material and growing the single crystal is suppressed, and
By reducing the generation of O gas, the thickness of the graphite crucible can be reduced and SiC can be reduced, and breakage due to relative expansion of the quartz crucible during cooling can be prevented. Further, since a slit is provided on the upper part of the graphite crucible to absorb the volume expansion due to the SiC conversion, it is possible to prevent the graphite crucible from being damaged due to stress concentration caused by the volume expansion. Therefore, it is possible to maintain the quality of the pulled single crystal and extend the service life of the graphite crucible. In the present invention, the use amount of the carbon fiber reinforced carbon material, which is more expensive than graphite, is minimized, so that an effect exceeding the cost increase of the graphite crucible can be obtained.
【図１】 第１の発明および第２の発明の第１実施例を
示す黒鉛るつぼの模式的断面図である。FIG. 1 is a schematic sectional view of a graphite crucible showing a first embodiment of the first invention and the second invention .
【図２】 図１の上面図である。FIG. 2 is a top view of FIG.
【図３】 第１の発明および第２の発明の第２実施例を
示す黒鉛るつぼの模式的断面図である。FIG. 3 is a schematic sectional view of a graphite crucible showing a second embodiment of the first invention and the second invention .
【図４】 図３の上面図である。FIG. 4 is a top view of FIG. 3;
【図５】 第１の発明および第２の発明の第３実施例を
示す黒鉛るつぼの模式的断面図である。FIG. 5 is a schematic sectional view of a graphite crucible showing a third embodiment of the first invention and the second invention .
【図６】 第３の発明の実施例を示す黒鉛るつぼの模式
的断面図である。FIG. 6 is a schematic sectional view of a graphite crucible showing an example of the third invention .
【図７】 第４の発明の第１実施例を示す黒鉛るつぼの
模式的断面図である。FIG. 7 is a schematic sectional view of a graphite crucible showing a first embodiment of the fourth invention .
【図８】 第４の発明の第２実施例を示す黒鉛るつぼの
模式的断面図である。FIG. 8 is a schematic sectional view of a graphite crucible showing a second embodiment of the fourth invention .
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平２−116696（ＪＰ，Ａ) 特開 平１−183490（ＪＰ，Ａ) 特公 平２−7917（ＪＰ，Ｂ２) 実公 平３−43250（ＪＰ，Ｙ２) (58)調査した分野(Int.Cl.7，ＤＢ名) C30B 1/00 - 35/00 ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-2-116696 (JP, A) JP-A-1-183490 (JP, A) JP 2-7917 (JP, B2) Jiko 3- 43250 (JP, Y2) (58) Fields studied (Int. Cl. 7 , DB name) C30B 1/00-35/00
Claims (3)
本のスリットを有する円筒状のるつぼ上部とるつぼ底部
とに分割し、前記るつぼ上部の外周の少なくともメルト
レベルから下の部分に炭素繊維強化炭素材からなる円筒
部材を嵌装したことを特徴とする半導体単結晶育成装置
の黒鉛るつぼ。1. A graphite crucible, wherein at least one
It is divided into a cylindrical crucible top having a slit and a crucible bottom, and a cylindrical member made of carbon fiber reinforced carbon material is fitted in at least a portion below the melt level of the outer periphery of the crucible upper part. Graphite crucible for semiconductor single crystal growing equipment.
上端からメルトレベルまでの高さ以上としたことを特徴
とする請求項１の半導体単結晶育成装置の黒鉛るつぼ。2. The graphite crucible according to claim 1, wherein the length of the cylindrical member in the axial direction is equal to or greater than the height from the upper end of the crucible bottom to the melt level.
有する黒鉛るつぼをるつぼ受けに載置し、前記るつぼ受
けの上端に、前記黒鉛るつぼの外周の少なくともメルト
レベルから下の部分を取り巻く炭素繊維強化炭素材から
なる円筒部材を載置したことを特徴とする半導体単結晶
育成装置の黒鉛るつぼ。3. A graphite crucible having at least one slit in a vertical direction is placed on a crucible receiver, and a carbon fiber reinforcement is provided at an upper end of the crucible receiver, surrounding at least a portion below a melt level of an outer periphery of the graphite crucible. A graphite crucible for a semiconductor single crystal growing apparatus, wherein a cylindrical member made of a carbon material is mounted.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19509093A JP3181443B2 (en) | 1993-07-12 | 1993-07-12 | Graphite crucible for semiconductor single crystal growing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19509093A JP3181443B2 (en) | 1993-07-12 | 1993-07-12 | Graphite crucible for semiconductor single crystal growing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0725694A JPH0725694A (en) | 1995-01-27 |
| JP3181443B2 true JP3181443B2 (en) | 2001-07-03 |
Family
ID=16335373
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19509093A Expired - Fee Related JP3181443B2 (en) | 1993-07-12 | 1993-07-12 | Graphite crucible for semiconductor single crystal growing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3181443B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5286589B2 (en) * | 2008-05-01 | 2013-09-11 | イビデン株式会社 | Crucible holding member and manufacturing method thereof |
| KR20120127405A (en) * | 2009-12-04 | 2012-11-21 | 사인트-고바인 인두스트리에 케라믹 레덴탈 게엠베하 | Device for holding silicon melt |
| JP6743797B2 (en) * | 2017-09-29 | 2020-08-19 | 株式会社Sumco | Crucible support pedestal, quartz crucible support device, and method for manufacturing silicon single crystal |
-
1993
- 1993-07-12 JP JP19509093A patent/JP3181443B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0725694A (en) | 1995-01-27 |
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