JP3164849B2 - Method for producing lead zirconate titanate thin film - Google Patents

Method for producing lead zirconate titanate thin film

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Publication number
JP3164849B2
JP3164849B2 JP24006691A JP24006691A JP3164849B2 JP 3164849 B2 JP3164849 B2 JP 3164849B2 JP 24006691 A JP24006691 A JP 24006691A JP 24006691 A JP24006691 A JP 24006691A JP 3164849 B2 JP3164849 B2 JP 3164849B2
Authority
JP
Japan
Prior art keywords
zirconate titanate
thin film
lead zirconate
titanate thin
alcohol
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP24006691A
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Japanese (ja)
Other versions
JPH0543241A (en
Inventor
誠治 高橋
越智篤
真一 平野
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NEC Corp
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NEC Corp
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Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は高純度で組成が化学両論
比に制御された低温で焼成できる、特に厚さが数100
Aないし数μmのジルコン酸チタン酸鉛薄膜の製造方法
に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention can be fired at a low temperature with a high purity and a composition controlled to a stoichiometric ratio.
The present invention relates to a method for producing a thin film of lead zirconate titanate having a thickness of A to several μm.

【0002】[0002]

【従来の技術】ジルコン酸チタン酸鉛は強誘電性、圧電
性、焦電性を示し種々の応用に期待されている。また、
強誘電素子、圧電素子、焦電素子などの電子デバイスの
小型化集積化にともない、薄膜化が試みられている。
2. Description of the Related Art Lead zirconate titanate exhibits ferroelectricity, piezoelectricity and pyroelectricity, and is expected for various applications. Also,
With the miniaturization and integration of electronic devices such as ferroelectric elements, piezoelectric elements, and pyroelectric elements, thinning has been attempted.

【0003】ジルコン酸チタン酸鉛の薄膜はスパッター
法やCVD法などによって合成されているが、これらの
方法ではジルコン酸チタン酸鉛が鉛、ジルコニウム、チ
タン、酸素からなる4元系であるため膜面内で組成を均
一に制御することは非常に困難である。また、真空系で
合成するため酸素欠陥が非常に多く、絶縁不良等の問題
点がでていた。
A thin film of lead zirconate titanate is synthesized by a sputtering method, a CVD method or the like. However, in these methods, since lead zirconate titanate is a quaternary system composed of lead, zirconium, titanium and oxygen, the film is formed. It is very difficult to control the composition uniformly in the plane. In addition, since the synthesis is performed in a vacuum system, the number of oxygen vacancies is extremely large, and there have been problems such as poor insulation.

【0004】これらの問題点を解決するため、構成金属
元素を含む溶液を出発物質に用いたゾルゲル法によるジ
ルコン酸チタン酸鉛合成の試みがなされてきた。ゾルゲ
ル法は狭義には金属アルコキシド法とも呼ばれ、実際に
は以下の方法でジルコン酸チタン酸鉛を合成する。酢酸
鉛とジルコニウムおよびチタンのアルコキシドをモル比
1:1−x:xとなるように秤量し、アルコール中で溶
解還流し、反応させる。得られた溶液を部分加水分解
し、ジルコン酸チタン酸鉛の前駆体溶液を得る。この溶
液を基板に塗布、乾燥ゲル膜を作製し、これを加熱処理
を行うことにより結晶性のジルコン酸チタン酸鉛薄膜を
得る。この方法によって得られた薄膜は、組成が化学量
論比で面内での組成均一性が非常によく、酸素欠陥が少
なく、絶縁性が高い。
In order to solve these problems, attempts have been made to synthesize lead zirconate titanate by a sol-gel method using a solution containing constituent metal elements as a starting material. The sol-gel method is also referred to as a metal alkoxide method in a narrow sense. In practice, lead zirconate titanate is synthesized by the following method. Lead acetate and alkoxides of zirconium and titanium are weighed in a molar ratio of 1: 1-x: x, dissolved in alcohol, refluxed, and reacted. The obtained solution is partially hydrolyzed to obtain a precursor solution of lead zirconate titanate. This solution is applied to a substrate to form a dried gel film, which is subjected to a heat treatment to obtain a crystalline lead zirconate titanate thin film. The thin film obtained by this method has a stoichiometric composition, very good in-plane composition uniformity, few oxygen defects, and high insulating properties.

【0005】[0005]

【発明が解決しようとする課題】従来のゾルゲル法では
塗布したゲル膜を結晶化するのに比較的高温が必要であ
り、そのため基板種類が限定されるという問題点があっ
た。また、従来のゾルゲル法では前駆体溶液中に酢酸基
が残留しており、溶液中の前駆体が溶液保管中に再度酢
酸基と反応して分解してしまい、溶液の安定性に問題が
あった。また、溶液濃度を調整することが困難であっ
た。
In the conventional sol-gel method, a relatively high temperature is required to crystallize the applied gel film, so that there is a problem that the types of substrates are limited. In addition, in the conventional sol-gel method, an acetate group remains in the precursor solution, and the precursor in the solution reacts with the acetate group again during storage of the solution to be decomposed, and there is a problem in the stability of the solution. Was. Also, it was difficult to adjust the solution concentration.

【0006】[0006]

【課題を解決するための手段】本発明は酢酸鉛とジルコ
ニウムアルコキシドとチタンアルコキシドのモル比が
1:1−x:x(ただし1>x>0)となるように混
合、反応させ、得られた溶液で基板表面を被覆して酸素
水蒸気混合雰囲気中で加熱する工程を少なくとも一回以
上繰り返し、当該基板上にジルコン酸チタン酸鉛薄膜を
形成せしめることを特徴とするジルコン酸チタン酸鉛薄
膜の製造方法であり、また酢酸鉛とジルコニウムアルコ
キシドとチタンアルコキシドをそのモル比が1:1−
x:x(ただし0<x<1)となるようにアルコール中
で混合反応させ、得られた溶液に多価アルコールあるい
はその誘導体の蒸気圧が低くアルコールと共沸混合物を
作らない溶媒を添加した後濃縮し、該溶液で基板を被覆
して450℃以下の温度で酸素水蒸気混合気流中で加熱
焼成する工程を少なくとも一回以上繰り返し、当該基板
上にジルコン酸チタン酸鉛薄膜を多層に積層せしめるこ
とを特徴とするジルコン酸チタン酸鉛薄膜の製造方法で
ある。
According to the present invention, a mixture is obtained by mixing and reacting lead acetate, zirconium alkoxide, and titanium alkoxide in a molar ratio of 1: 1-x: x (where 1>x> 0). The step of coating the substrate surface with the solution and heating it in an oxygen-vapor mixed atmosphere at least once or more to form a lead zirconate titanate thin film on the substrate, A lead acetate, a zirconium alkoxide and a titanium alkoxide having a molar ratio of 1: 1
x: x was mixed and reacted in an alcohol so that x (where 0 <x <1), and a solvent which did not form an azeotrope with the alcohol due to low vapor pressure of the polyhydric alcohol or a derivative thereof was added to the obtained solution. Post-concentration, coating the substrate with the solution and heating and baking at a temperature of 450 ° C. or less in a mixed stream of oxygen and steam at least once or more, and laminating a lead zirconate titanate thin film in multiple layers on the substrate. A method for producing a lead zirconate titanate thin film, comprising:

【0007】さらに詳しく具体例を述べると次の通りで
ある。出発原料としてジルコニウムのアルコキシドとチ
タンのアルコキシドを用いこれらのモル比が1−x:x
となるように脱水、精製したアルコールに混合、溶解し
た。アルコールは常温で液体であればよく、好ましくは
エタノールを用いる。この溶液に酢酸鉛をPb:(Zr
+Ti)=1:1となるように添加し、還流し、PbZ
1 - x Tix 3 の前駆体を作成し、得られたPbZ
1 - x Tix 3 前駆体を濃縮し、または、得られた
溶液に多価アルコールあるいはその誘導体の蒸気圧が低
くアルコールと共沸混合物を作らない溶媒を添加した後
濃縮し、この溶液に結晶基板を浸漬し、一定速度で引き
上げることにより基板表面にコーティング膜を形成し
た。これらの操作は金属アルコキシドが空気中の水分で
容易に加水分解するため、乾燥した窒素雰囲気中で行っ
た。数分間乾燥させた後、酸素と水蒸気の混合気流中
で、ついで乾燥酸素気流中で加熱処理することによって
ジルコン酸チタン酸鉛単相の薄膜を得ることができる。
この後、浸漬、引き上げ、乾燥、加熱の工程を数回繰り
返すことにより、所望の厚さのジルコン酸チタン酸鉛薄
膜を得ることができる。
A more specific example is as follows. An alkoxide of zirconium and an alkoxide of titanium are used as starting materials, and their molar ratio is 1-x: x
And mixed and dissolved in dehydrated and purified alcohol. The alcohol may be a liquid at room temperature, and ethanol is preferably used. Pb: (Zr
+ Ti) = 1: 1, refluxed, and PbZ
A precursor of r 1 -x Ti x O 3 was prepared, and the obtained PbZ
The r 1 -x Ti x O 3 precursor is concentrated, or a solvent in which the vapor pressure of a polyhydric alcohol or a derivative thereof is low and does not form an azeotrope with the alcohol is added to the obtained solution, followed by concentration. A coating film was formed on the substrate surface by immersing the crystal substrate in the substrate and lifting it up at a constant speed. These operations were performed in a dry nitrogen atmosphere because the metal alkoxide is easily hydrolyzed by moisture in the air. After drying for several minutes, a heat treatment is performed in a mixed gas stream of oxygen and water vapor and then in a dry oxygen gas stream to obtain a thin film of a single phase of lead zirconate titanate.
Thereafter, the steps of dipping, lifting, drying, and heating are repeated several times, whereby a lead zirconate titanate thin film having a desired thickness can be obtained.

【0008】[0008]

【作用】本発明によれば加熱処理中の雰囲気を酸素水蒸
気混合気流中とすることで、最終的にジルコン酸チタン
酸鉛を得るのに必要な熱処理の温度を従来の方法のよう
な600℃以上の高温から450℃以下の低温にする事
ができる。これにより、Si基板や多くのガラス基板が
使用でき、基板の選択の自由が広まり、圧電素子や焦電
素子への応用を期待できる。また、本発明によれば、酢
酸基を含む溶媒アルコールは多価アルコールあるいはそ
の誘導体であるアルコール溶媒とほとんど共沸混合物を
作らないので濃縮時に酢酸基と共にアルコール溶媒を蒸
発させることができ、前駆体溶液を安定に保つことがで
きる。また、計算量の多価アルコールあるいはその誘導
体を添加する事により正確に前駆体溶液濃度を制御でき
る。
According to the present invention, by setting the atmosphere during the heat treatment to an oxygen steam mixed gas stream, the temperature of the heat treatment necessary for finally obtaining lead zirconate titanate is set to 600 ° C. as in the conventional method. The above high temperature can be lowered to 450 ° C. or lower. Thereby, a Si substrate or many glass substrates can be used, and the freedom of selecting the substrate is widened, and application to a piezoelectric element or a pyroelectric element can be expected. Further, according to the present invention, since the solvent alcohol containing an acetic acid group hardly forms an azeotropic mixture with an alcohol solvent that is a polyhydric alcohol or a derivative thereof, the alcohol solvent can be evaporated together with the acetic acid group during concentration, and the precursor The solution can be kept stable. In addition, the precursor solution concentration can be accurately controlled by adding a calculated amount of a polyhydric alcohol or a derivative thereof.

【0009】[0009]

【実施例】以下、本発明を実施例によりさらに詳細に説
明する。ただし、本発明の範囲は下記実施例により何等
限定されるものではない。
The present invention will be described in more detail with reference to the following examples. However, the scope of the present invention is not limited at all by the following Examples.

【0010】テトラエトキシジルコニウム:Zr(OC
2 5 4 とテトラエトキシチタン:Ti(OC
2 54 をZr:Tiの比が1−x:xとなるように
それぞれ秤取し、脱水、精製したエタノール中に混合、
溶解した。この溶液を24時間攪拌、還流した。この溶
液に酢酸鉛をPb:(Zr+Ti)=1:1となるよう
に添加し、還流し、PbZr1 - x Tix 3 の前駆体
を作成した。得られたPbZr1 - x Tix 3 前駆体
を濃縮し、ジルコン酸チタン酸鉛前駆体濃度が0.2m
ol/lとなるようにした。また別の例としてエチレン
グリコールを所定量添加し、酢酸基とエタノールを蒸発
させ、ジルコン酸チタン酸鉛前駆体溶液を作製した。た
だし、添加する溶媒はエチレングリコール以外にセルソ
ルブ系やカルビトール系の室温で飽和蒸気圧が低く、ア
ルコールと共沸混合物を作りにくい多価アルコールある
いはその誘導体であれば良い。これらの操作は金属アル
コキシドが空気中の水分で容易に加水分解するため、乾
燥した窒素雰囲気中で行った。
[0010] Tetraethoxyzirconium: Zr (OC
2 H 5) 4 and tetraethoxytitanium: Ti (OC
Mixture were weighed respectively so as to be x, dehydrated, in purified ethanol, which: a 2 H 5) 4 Zr: Ti ratio is 1-x
Dissolved. The solution was stirred and refluxed for 24 hours. Lead acetate was added to this solution so that Pb: (Zr + Ti) = 1: 1, and the mixture was refluxed to prepare a precursor of PbZr 1 -xTi x O 3 . The resulting PbZr 1 - x Ti x O 3 precursor was concentrated, 0.2 m is lead zirconate titanate precursor concentration
ol / l. As another example, a predetermined amount of ethylene glycol was added, and the acetate group and ethanol were evaporated to prepare a lead zirconate titanate precursor solution. However, the solvent to be added may be a polyhydric alcohol or its derivative other than ethylene glycol, such as a cellosolve or carbitol type, which has a low saturated vapor pressure at room temperature and hardly forms an azeotrope with alcohol. These operations were performed in a dry nitrogen atmosphere because the metal alkoxide is easily hydrolyzed by moisture in the air.

【0011】得られたジルコン酸チタン酸鉛前駆体濃縮
溶液にα−Al2 3 (012)基板を浸漬し一定の速
度で引き上げ途布を行い、乾燥させた。この後得られた
ジルコン酸チタン酸鉛の前駆体のコーティング膜を35
0℃、400℃、450℃の3種類の温度条件下で酸素
と水蒸気の混合雰囲気中で1時間、ついで乾燥酸素中で
1時間保持し加熱処理を行った。この浸漬、引き上げ、
乾燥、加熱処理(350℃、400℃、450℃)の工
程を繰り返して、緻密な結晶性のPbZr1 -x Tix
3 薄膜を合成することができた。
The α-Al 2 O 3 (012) substrate was immersed in the obtained concentrated solution of the lead zirconate titanate precursor, pulled up at a constant speed, dried, and dried. After that, the coating film of the precursor of lead zirconate titanate obtained was treated with 35
Heat treatment was performed for 1 hour in a mixed atmosphere of oxygen and steam for 1 hour and then for 1 hour in dry oxygen under three temperature conditions of 0 ° C, 400 ° C, and 450 ° C. This dipping, lifting,
The steps of drying and heat treatment (350 ° C., 400 ° C., 450 ° C.) are repeated to obtain a dense crystalline PbZr 1 -x Ti x
An O 3 thin film could be synthesized.

【0012】従来法との比較のため上記のジルコン酸チ
タン酸鉛の前駆体のコーティング膜を乾燥酸素気流中で
同じ温度で加熱処理し薄膜を得た。
For comparison with the conventional method, the above-mentioned coating film of the precursor of lead zirconate titanate was heat-treated at the same temperature in a dry oxygen stream to obtain a thin film.

【0013】これら得られた薄膜をCuをターゲットと
した粉末X線回析法により調べた結果、乾燥酸素気流中
で加熱処理した場合450℃の加熱処理でも結晶化しな
かった。それに対し、酸素水蒸気混合気流中では350
℃加熱処理では結晶化はみられなかったものの、400
℃加熱処理では十分に結晶化しており、450℃加熱処
理ではほぼ完全に近い結晶性膜となっていることが確認
された。
As a result of examining the obtained thin film by a powder X-ray diffraction method using Cu as a target, when the heat treatment was performed in a dry oxygen gas stream, no crystallization was observed even at 450 ° C. On the other hand, in an oxygen steam mixed gas flow, 350
Although crystallization was not observed in the heat treatment at 400 ° C.,
It was confirmed that the film was sufficiently crystallized by the heat treatment at 450 ° C., and the crystalline film was almost completely formed by the heat treatment at 450 ° C.

【0014】図1(a)は実施例にて酸素水蒸気混合気
流中で、また図1(b)は従来法にて乾燥気流中で、そ
れぞれ加熱処理温度を変えて最終的に得られた薄膜のX
線回析図を示したものである。図1(a)および図1
(b)の図中において○印をつけたものはPbZr
1 - x Tix 3薄膜の回析線のピークを、△印をつけ
たものは基板のα−Al2 3 回析線のピークをそれぞ
れ示すものである。
FIG. 1 (a) shows a thin film finally obtained in an embodiment in a mixed gas stream of oxygen and water vapor, and FIG. X
FIG. 3 shows a line diffraction diagram. FIG. 1 (a) and FIG.
In the figure of (b), those with a circle are PbZr.
The peak of the diffraction line of the 1-x Ti x O 3 thin film is shown, and the one marked with a triangle indicates the peak of the α-Al 2 O 3 diffraction line of the substrate.

【0015】[0015]

【発明の効果】このように、本方法によれば配向した結
晶性の高いジルコン酸チタン酸鉛薄膜を従来の方法に比
べて極めて低温にて製造することができる。
As described above, according to the present method, an oriented lead zirconate titanate thin film having high crystallinity can be produced at an extremely low temperature as compared with the conventional method.

【0016】この発明はこのように緻密な配向した結晶
性のジルコン酸チタン酸鉛薄膜の低温焼成を可能にした
ものでありジルコン酸チタン酸鉛を用いた圧電素子や焦
電素子等の種々の応用にその活用が期待されるものであ
る。
The present invention enables low-temperature sintering of such a densely oriented crystalline lead zirconate titanate thin film, and various kinds of piezoelectric elements and pyroelectric elements using the lead zirconate titanate. Its application is expected to be applied.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明(a)と従来例(b)のX線回析図であ
る。
FIG. 1 is an X-ray diffraction diagram of the present invention (a) and a conventional example (b).

───────────────────────────────────────────────────── フロントページの続き (72)発明者 平野 真一 名古屋市東区矢田町2丁目66番名古屋大 学矢田町宿舎123号室 (58)調査した分野(Int.Cl.7,DB名) C01G 25/00 ──────────────────────────────────────────────────続 き Continuing from the front page (72) Inventor Shinichi Hirano 2-66 Yadacho, Higashi-ku, Nagoya City Room 123, Yadacho Dormitory, Nagoya University (58) Field surveyed (Int. Cl. 7 , DB name) C01G 25 / 00

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 酢酸鉛とジルコニウムアルコキシドとチ
タンアルコキシドをそのモル比が1:1−x:x(ただ
し1>x>0)となるように混合、反応させ、得られた
溶液で基板表面を被覆して酸素水蒸気混合雰囲気中で加
熱する工程を少なくとも一回以上繰り返し、当該基板上
にジルコン酸チタン酸鉛薄膜を形成せしめることを特徴
とするジルコン酸チタン酸鉛薄膜の製造方法。
1. A mixture of lead acetate, zirconium alkoxide, and titanium alkoxide in a molar ratio of 1: 1-x: x (where 1>x> 0), and the reaction is carried out. A process for producing a lead zirconate titanate thin film, comprising repeating the step of coating and heating in an oxygen / steam mixed atmosphere at least once or more to form a lead zirconate titanate thin film on the substrate.
【請求項2】 酢酸鉛とジルコニウムアルコキシドとチ
タンアルコキシドをそのモル比が1:1−x:x(ただ
し0<x<1)となるようにアルコール中で混合反応さ
せ、得られた溶液に多価アルコールあるいはその誘導体
の蒸気圧が低くアルコールと共沸混合物を作らない溶媒
を添加した後濃縮し、該溶液で基板を被覆して450℃
以上の温度で酸素水蒸気混合気流中で加熱焼成する工程
を少なくとも一回以上繰り返し、当該基板上にジルコン
酸チタン酸鉛薄膜を多層に積層せしめることを特徴とす
るジルコン酸チタン酸鉛薄膜の製造方法。
2. A mixed reaction of lead acetate, zirconium alkoxide and titanium alkoxide in an alcohol such that the molar ratio thereof is 1: 1-x: x (where 0 <x <1). After adding a solvent which does not form an azeotrope with the alcohol, the vapor pressure of the polyhydric alcohol or a derivative thereof is low, and then the mixture is concentrated.
A process for producing a lead zirconate titanate thin film, comprising repeating the step of heating and firing in an oxygen steam mixed gas stream at the above temperature at least once, and laminating the lead zirconate titanate thin film in multiple layers on the substrate. .
JP24006691A 1990-10-18 1991-09-20 Method for producing lead zirconate titanate thin film Expired - Fee Related JP3164849B2 (en)

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RU2470866C1 (en) * 2011-06-22 2012-12-27 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Московский государственный технический университет радиотехники, электроники и автоматики" Method of preparing anhydrous film-forming solutions for forming ferroelectric lead zirconate-titanate films with low freezing point

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Cited By (2)

* Cited by examiner, † Cited by third party
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RU2465969C1 (en) * 2011-05-20 2012-11-10 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Московский государственный технический университет радиотехники, электроники и автоматики" Method of making anhydrous filming solutions for producing ferroelectric films of lead zirconate-titanate
RU2470866C1 (en) * 2011-06-22 2012-12-27 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Московский государственный технический университет радиотехники, электроники и автоматики" Method of preparing anhydrous film-forming solutions for forming ferroelectric lead zirconate-titanate films with low freezing point

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