JP3164597B2 - Semiconductor wafer cleaning equipment - Google Patents
Semiconductor wafer cleaning equipmentInfo
- Publication number
- JP3164597B2 JP3164597B2 JP11763991A JP11763991A JP3164597B2 JP 3164597 B2 JP3164597 B2 JP 3164597B2 JP 11763991 A JP11763991 A JP 11763991A JP 11763991 A JP11763991 A JP 11763991A JP 3164597 B2 JP3164597 B2 JP 3164597B2
- Authority
- JP
- Japan
- Prior art keywords
- cleaning
- wafer
- semiconductor wafer
- cleaned
- head
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
Description
【０００１】[0001]
【産業上の利用分野】この発明は半導体ウェ−ハの洗浄
装置に係わり、特に半導体ＩＣの製造工程中、半導体ウ
ェ−ハ表面上に付着した汚染物質を取り除く洗浄装置に
関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cleaning device for a semiconductor wafer, and more particularly to a cleaning device for removing contaminants adhering to the surface of a semiconductor wafer during a semiconductor IC manufacturing process.
【０００２】[0002]
【従来の技術】従来、半導体ＩＣ製造工程中、半導体ウ
ェ−ハを洗浄するための方法として、例えば、図９に示
すような、ウェ−ハ１００を保持する治具１０２、例え
ばポリフッ化エチレン系樹脂によるカセットとともにウ
ェ−ハ１００を、薬品または純水（以下洗浄液と称す）
１０４を満たした洗浄槽１０６に浸漬して、ウェ−ハ１
００の表面上に付着した汚染物質を溶解、分散して洗浄
する方法が知られている。2. Description of the Related Art Conventionally, as a method for cleaning a semiconductor wafer during a semiconductor IC manufacturing process, for example, a jig 102 for holding a wafer 100 as shown in FIG. The wafer 100 together with the cassette made of resin is treated with chemicals or pure water (hereinafter referred to as a cleaning liquid).
The wafer 1 is immersed in a cleaning tank 106 filled with
A method of dissolving and dispersing contaminants adhered on the surface of No. 00 and washing the same is known.
【０００３】また、その他の方法とし、図１０に示すよ
うな、吸引口１０８を脱気してウェ−ハ１００を一枚ず
つ、その裏面を真空チャックし、洗浄液１０４をウェ−
ハ１００の主表面に噴射し、主表面に付着した汚染物質
を溶解した後、ウェ−ハ１００を回転させて洗浄液１０
４とともに汚染物質を振り払う方法も良く知られるとこ
ろである。As another method, as shown in FIG. 10, the suction port 108 is evacuated and the wafers 100 are vacuum-chucked one by one, and the cleaning liquid 104 is wafer-washed.
After spraying onto the main surface of the wafer 100 to dissolve the contaminants adhering to the main surface, the wafer 100 is rotated and the cleaning solution 10 is rotated.
The method of shaking off contaminants together with 4 is well known.
【０００４】ところで、半導体ＩＣの製造工程中、ウェ
−ハは、パ−ティクルの付着等、様々な汚染を受ける
が、一般にウェ−ハの主表面、裏面、側面で汚染を受け
る量が各々異なる。このため、従来の洗浄方法では、以
下に説明するような問題を生じている。In the process of manufacturing a semiconductor IC, the wafer is subjected to various kinds of contamination such as adhesion of particles. Generally, the amount of contamination on the main surface, the back surface, and the side surface of the wafer is different. . For this reason, the conventional cleaning method has the following problems.
【０００５】前者の浸漬式の洗浄方法を用いた洗浄装置
では、汚染量の大きい部分（主として裏面や側面）に存
在する汚染物質が、汚染量の小さい部分（主として表
面）に付着する、所謂“逆汚染（相互干渉）”が不可避
である。さらにウェ−ハ１００の表面、裏面それぞれの
周辺部、およびその側面は、治具１０２との接触等によ
り洗浄効果が低下してしまう。In a cleaning apparatus using the former immersion type cleaning method, a so-called "contaminant" is present in which a contaminant present in a portion with a large amount of contamination (mainly on the back and side surfaces) adheres to a portion with a small amount of contamination (mainly on the surface). Reverse contamination (mutual interference) "is inevitable. Further, the peripheral portion of the front surface and the rear surface of the wafer 100 and the side surface thereof have a reduced cleaning effect due to contact with the jig 102 or the like.
【０００６】その点、後者の枚葉式の洗浄方法を用いた
洗浄装置では、上記のような逆汚染の問題はほとんどな
いが、洗浄液１０４を完全に振り払えないため、汚染物
質が濃縮されてウェ−ハ１００の表裏面の周辺部や、そ
の側面に残りやすい。さらに裏面をチャックするため、
表面と裏面とを一括して洗浄することはできない。On the other hand, in the cleaning apparatus using the latter single-wafer cleaning method, there is almost no problem of reverse contamination as described above. However, since the cleaning liquid 104 cannot be completely shaken, contaminants are concentrated. It is likely to remain on the periphery of the front and back surfaces of the wafer 100 and on the side surfaces thereof. In order to further chuck the back,
The front and back sides cannot be washed at once.
【０００７】[0007]
【発明が解決しようとする課題】以上のように従来の洗
浄装置では、浸漬式、枚葉式いずれの方法でも、ウェ−
ハの表面および裏面の周辺部、および側面の洗浄が不完
全である。As described above, in the conventional cleaning apparatus, the wafer is irrespective of the immersion type or the single-wafer type.
The cleaning of the peripheral portion and the side surface of the front and back surfaces of the c is incomplete.
【０００８】この発明は上記のような点に鑑みて為され
たもので、その目的は、ウェ−ハの表面および裏面の周
辺部とともに側面をも洗浄できる半導体ウェ−ハ洗浄装
置を提供することにある。SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and an object of the present invention is to provide a semiconductor wafer cleaning apparatus capable of cleaning not only the peripheral portions of the front and back surfaces of the wafer but also the side surfaces. It is in.
【０００９】[0009]
【課題を解決するための手段】この発明の半導体ウェ−
ハ洗浄装置は、上記目的を実現するために次のような構
成とした。A semiconductor wafer according to the present invention is provided.
The cleaning device has the following configuration to achieve the above object.
【００１０】すなわち、半導体ウェ−ハの周辺部を支持
する支持手段を有し、この支持手段とウェ−ハとが互い
に接触する部分に、ウェ−ハを洗浄する洗浄手段を設け
たことを特徴とする。That is, there is provided a support means for supporting a peripheral portion of the semiconductor wafer, and a cleaning means for cleaning the wafer is provided at a portion where the support means and the wafer are in contact with each other. And
【００１１】[0011]
【作用】上記のような半導体ウェ−ハ洗浄装置にあって
は、ウェ−ハの周辺部を支持する支持手段と、ウェ−ハ
とが互いに接触する部分に洗浄手段を設けているので、
ウェ−ハの周辺部、およびその側面まで洗浄することが
できる。In the semiconductor wafer cleaning apparatus as described above, the supporting means for supporting the peripheral portion of the wafer and the cleaning means are provided at a portion where the wafer comes into contact with each other.
The peripheral portion of the wafer and the side surface thereof can be cleaned.
【００１２】さらに前記洗浄手段を透水性弾性体、また
はブラシにより構成すれば、ウェ−ハを保持できるとと
もに、この洗浄手段を介して洗浄液をウェ−ハまで導く
ことができる。Further, if the cleaning means is constituted by a water-permeable elastic body or a brush, the wafer can be held and the cleaning liquid can be guided to the wafer via the cleaning means.
【００１３】また前記ウェ−ハを洗浄するための第１の
洗浄液を洗浄手段に供給するとともに、前記ウェ−ハを
所定枚数洗浄した後、この洗浄手段を洗浄するための第
２の洗浄液を前記洗浄手段に供給すれば、洗浄手段自体
を洗浄することができる。これにより、洗浄手段の汚れ
を要因としたウェ−ハの新たな汚染を防止できる。In addition, a first cleaning liquid for cleaning the wafer is supplied to cleaning means, and after cleaning a predetermined number of wafers, a second cleaning liquid for cleaning the cleaning means is supplied to the cleaning means. If supplied to the cleaning means, the cleaning means itself can be cleaned. Thus, new contamination of the wafer due to contamination of the cleaning means can be prevented.
【００１４】[0014]
【実施例】以下、図面を参照してこの発明を実施例によ
り説明する。図１は、この発明の第１の実施例に係わる
ウェ−ハ洗浄装置の平面図、図２は、その一部を断面と
して示した側面図である。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to the drawings. FIG. 1 is a plan view of a wafer cleaning apparatus according to a first embodiment of the present invention, and FIG. 2 is a side view showing a part of the apparatus as a cross section.
【００１５】図１および図２に示すように、ウェ−ハ１
の周辺部を支持する支持部３Ａ〜３Ｄが設けられてい
る。支持部３Ａ〜３Ｄは軸５Ａ〜５Ｄに取り付けられて
いる。軸５Ａ〜５Ｄは移動機構７Ａ〜７Ｄに接続され、
移動機構７Ａ〜７Ｄにそれぞれ内蔵されたモ−タＭによ
り、軸５Ａ〜５Ｄは図２中に示す矢印９の方向に移動す
る。支持部３Ａ〜３Ｄも軸５Ａ〜５Ｄの動きに伴って矢
印９の方向に移動する。ステ−ジ１１の上にはレ−ル１
３Ａ〜１３Ｄが設けられている。レ−ル１３Ａ〜１３Ｄ
の上には、移動台１５Ａ〜１５Ｄが乗っている。移動台
１５Ａ〜１５Ｄはそれぞれモ−タＭを内蔵しており、移
動台１５Ａ〜１５Ｄはレ−ル１３Ａ〜１３Ｄに沿って移
動する。移動台１５Ａ〜１５Ｄにはそれぞれ支柱１７Ａ
〜１７Ｄがが取り付けられている。移動機構７Ａ〜７Ｄ
は、これらの支柱１７Ａ〜１７Ｄに接続され、モ−タＭ
により、移動機構７Ａ〜７Ｄは支柱１７Ａ〜１７Ｄに沿
って図２中に示す矢印１９の方向に移動する。よって、
支持部３Ａ〜３Ｄは、矢印９の方向、矢印１９の方向、
およびレ−ル１３Ａ〜１３Ｄに沿ってウェ−ハ１の円周
方向に移動できる。支持部３Ａ〜３Ｄとウェ−ハ１とが
接触する部分には洗浄ヘッド２１Ａ〜２１Ｄが設けられ
ている。この実施例では、洗浄ヘッド２１Ａ〜２１Ｄは
それぞれ、ウェ−ハ１の周辺の約５ｍｍ程度を、保持お
よび洗浄するように設計されたが、その寸法は適宜変更
しても良い。また洗浄ヘッド２１Ａ〜２１Ｄは、ウェ−
ハ１の円周方向に沿って移動することにより、ウェ−ハ
１の周辺部を洗浄する。As shown in FIGS. 1 and 2, the wafer 1
Are provided. The supporting portions 3A to 3D for supporting the peripheral portion are provided. The supports 3A to 3D are attached to the shafts 5A to 5D. The shafts 5A to 5D are connected to moving mechanisms 7A to 7D,
The shafts 5A to 5D move in the directions of arrows 9 shown in FIG. 2 by the motors M built in the moving mechanisms 7A to 7D, respectively. The support portions 3A to 3D also move in the direction of the arrow 9 with the movement of the shafts 5A to 5D. Rail 1 on stage 11
3A to 13D are provided. Rails 13A to 13D
On the top are mobile tables 15A to 15D. Each of the moving tables 15A to 15D has a built-in motor M, and the moving tables 15A to 15D move along the rails 13A to 13D. Each of the movable bases 15A to 15D has a support 17A.
To 17D are attached. Moving mechanism 7A to 7D
Are connected to these columns 17A to 17D, and the motor M
Thereby, the moving mechanisms 7A to 7D move in the directions of arrows 19 shown in FIG. 2 along the columns 17A to 17D. Therefore,
The support portions 3A to 3D are in the direction of arrow 9, the direction of arrow 19,
And can move in the circumferential direction of the wafer 1 along the rails 13A to 13D. Washing heads 21A to 21D are provided at portions where the support portions 3A to 3D and the wafer 1 are in contact with each other. In this embodiment, each of the cleaning heads 21A to 21D is designed to hold and clean about 5 mm around the wafer 1, but the dimensions may be changed as appropriate. The cleaning heads 21A to 21D are
The peripheral portion of the wafer 1 is cleaned by moving along the circumferential direction of the wafer 1.
【００１６】洗浄ヘッド１３Ａ〜１３Ｄは、例えばポリ
フッ化エチレンで構成され、透水性、例えば多孔質（ポ
−ラス）なもので形成される。洗浄ヘッド１３Ａ〜１３
Ｄを透水性のもので形成すれば、例えば支持部３Ａ〜３
Ｄにそれぞれ、図２に示すような洗浄ヘッド１３Ａ〜１
３Ｄに通じる洗浄液供給口２３を設けておき、この供給
口２３より、洗浄液を注入することにより、ウェ−ハ１
に洗浄液を導くことができる。さらに洗浄ヘッド１３Ａ
〜１３Ｄに弾力性を持たせておけば、洗浄ヘッド１３Ａ
〜１３Ｄに設けられたスリット２２内にウェ−ハ１を挿
入するだけで、ウェ−ハ１を挟持できる。The cleaning heads 13A to 13D are made of, for example, polyfluoroethylene, and are formed of a water-permeable material, for example, a porous material. Cleaning heads 13A to 13
If D is formed of a water-permeable material, for example, the support portions 3A to 3A
D respectively show cleaning heads 13A-1A as shown in FIG.
A cleaning liquid supply port 23 communicating with the 3D is provided, and the cleaning liquid is injected from the supply port 23 to thereby provide a wafer 1.
To the cleaning solution. Further, the cleaning head 13A
If 13D has elasticity, the cleaning head 13A
The wafer 1 can be held by simply inserting the wafer 1 into the slits 22 provided in 13D to 13D.
【００１７】また、図２に示すように、ウェ−ハ１の表
面および裏面それぞれに洗浄液を噴射するノズル２５
Ａ、２５Ｂを設けておけば、ウェ−ハ１の表面および裏
面を同時に洗浄することも可能である。次に上記構成の
洗浄装置による洗浄方法について、図２および図３を参
照して説明する。As shown in FIG. 2, a nozzle 25 for spraying a cleaning liquid onto the front and back surfaces of the wafer 1 respectively.
If A and 25B are provided, the front and back surfaces of the wafer 1 can be cleaned at the same time. Next, a cleaning method using the cleaning apparatus having the above configuration will be described with reference to FIGS.
【００１８】まず、図２に示すノズル２５Ａおよび２５
Ｂより、洗浄液をウェ−ハ１の表面および裏面それぞれ
に噴射する。この後、図示せぬ洗浄ブラシにより、この
ブラシを回転させながらウェ−ハ１の表面および裏面の
洗浄液を払う。First, the nozzles 25A and 25A shown in FIG.
From B, the cleaning liquid is sprayed on the front and back surfaces of the wafer 1 respectively. Thereafter, a cleaning brush (not shown) is used to remove the cleaning liquid on the front and back surfaces of the wafer 1 while rotating the brush.
【００１９】この後、例えばステ−ジ１１を回転させる
ことにより、ウェ−ハ１を回転させ、洗浄液とともに汚
染物質を振り払う。この状態では、図３（ａ）に示すよ
うに、ウェ−ハ１の周辺部に、洗浄液とともに汚染物質
等を含む残留物３０が依然として残ったままである。Thereafter, the wafer 1 is rotated by, for example, rotating the stage 11 to shake off contaminants together with the cleaning liquid. In this state, as shown in FIG. 3A, a residue 30 containing a contaminant and the like together with the cleaning liquid still remains around the wafer 1.
【００２０】次いで、図３（ｂ）に示すように、洗浄ヘ
ッド２１Ａを矢印３２の方向に移動させるとともに、洗
浄ヘッド２１Ｂを矢印３２の方向と相反する、矢印３４
の方向に移動させてウェ−ハ１の周辺部に残る残留物３
０を除去する。この時、洗浄ヘッド２１Ｃ、２１Ｄはと
もに移動せず、ウェ−ハ１を保持している。Next, as shown in FIG. 3B, the cleaning head 21A is moved in the direction of arrow 32, and the cleaning head 21B is moved in the direction of arrow 34 opposite to the direction of arrow 32.
In the direction of the arrow 3 and the residue 3 remaining around the wafer 1
Remove 0. At this time, the cleaning heads 21C and 21D do not move, and hold the wafer 1.
【００２１】次いで、図３（ｃ）に示すように、洗浄ヘ
ッド２１Ａ、２１Ｂをそれぞれ、矢印３２、３４の方向
と逆の、矢印３６、３８の方向へ移動させ、残留物３０
を除去する。次いで、図３（ｄ）に示すように、洗浄ヘ
ッド２１Ａ、２１Ｂをそれぞれ、例えば図３（ａ）に示
した状態に戻す。Next, as shown in FIG. 3C, the cleaning heads 21A and 21B are moved in the directions of arrows 36 and 38 opposite to the directions of arrows 32 and 34, respectively.
Is removed. Next, as shown in FIG. 3D, the cleaning heads 21A and 21B are returned to the state shown in FIG. 3A, respectively.
【００２２】次いで、図３（ｅ）に示すように、洗浄ヘ
ッド２１Ｃを矢印４０の方向へ、洗浄ヘッド２１Ｄを矢
印４０の方向と相反する矢印４２の方向へそれぞれ移動
させ、残留物３０を除去する。この時、洗浄ヘッド２１
Ａ、２１Ｂはともに移動せず、ウェ−ハ１を保持してい
る。Next, as shown in FIG. 3E, the cleaning head 21C is moved in the direction of arrow 40, and the cleaning head 21D is moved in the direction of arrow 42 opposite to the direction of arrow 40, and the residue 30 is removed. I do. At this time, the cleaning head 21
Both A and 21B do not move and hold the wafer 1.
【００２３】次いで、図３（ｆ）に示すように、洗浄ヘ
ッド２１Ｃ、２１Ｄをそれぞれ、矢印４０、４２と方向
と逆の、矢印４４、４６の方向へ移動させ、残留物３０
を除去する。Next, as shown in FIG. 3 (f), the cleaning heads 21C and 21D are moved in the directions of arrows 44 and 46 opposite to the directions of arrows 40 and 42, respectively.
Is removed.
【００２４】この発明に係わる洗浄装置によれば、ウェ
−ハ１の周辺部を支持する支持部３Ａ〜３Ｄとウェ−ハ
１との間に洗浄ヘッド２１Ａ〜２１Ｄが設けられてい
る。この洗浄ヘッド２１Ａ〜２１Ｄをウェ−ハ１の周辺
部に沿って移動させることにより、ウェ−ハ１の周辺部
を洗浄できる。よって、ウェ−ハ１の表面および裏面の
みならず、ウェ−ハ１の表面および裏面の周辺部、並び
にその側面までも洗浄することができる。図４は、洗浄
ヘッド２１への洗浄液の供給系を示す図である。According to the cleaning apparatus of the present invention, the cleaning heads 21A to 21D are provided between the wafer 1 and the support portions 3A to 3D for supporting the peripheral portion of the wafer 1. By moving the cleaning heads 21A to 21D along the peripheral portion of the wafer 1, the peripheral portion of the wafer 1 can be cleaned. Therefore, not only the front and back surfaces of the wafer 1 but also the peripheral portions of the front and back surfaces of the wafer 1 and the side surfaces thereof can be cleaned. FIG. 4 is a diagram showing a supply system of the cleaning liquid to the cleaning head 21.
【００２５】図４に示すように、支持部３に設けられた
洗浄液供給口２３は、洗浄液を貯留しておくタンク５０
Ａ〜５０Ｄにそれぞれ接続されている。タンク５０Ａ〜
５０Ｄには、フッ酸（ＨＦ）、硝酸（ＨＮＯ3 ）、硫酸
（Ｈ2 ＳＯ4 ）、超純水等の洗浄液がそれぞれ貯えられ
ている。タンク５０Ａ〜５０Ｄにそれぞれ貯えられた洗
浄液は、ポンプＰにより汲み上げられ、微粒子や、不純
物等を除去するフィルタ５２を通り、バルブ５４Ａ〜５
４Ｄを介して洗浄ヘッド２１へ供給される。またバルブ
５４Ａ〜５４Ｄは制御装置５６により制御されて開閉す
る。バルブ５４Ａ〜５４Ｄが選択的に開閉することによ
り、洗浄ヘッド２１には、幾つかの洗浄液のうちから、
ウェ−ハの洗浄に最適なものを選んで供給できる。As shown in FIG. 4, a cleaning liquid supply port 23 provided in the support section 3 is provided with a tank 50 for storing the cleaning liquid.
A to 50D. Tank 50A ~
50D stores cleaning liquids such as hydrofluoric acid (HF), nitric acid (HNO 3 ), sulfuric acid (H 2 SO 4 ), and ultrapure water. The cleaning liquid stored in each of the tanks 50A to 50D is pumped up by the pump P, passes through the filter 52 for removing fine particles, impurities, and the like, and passes through the valves 54A to 54D.
It is supplied to the cleaning head 21 via 4D. The valves 54A to 54D are controlled by the control device 56 to open and close. By selectively opening and closing the valves 54A to 54D, the cleaning head 21 has several cleaning liquids.
The most suitable wafer can be selected and supplied.
【００２６】この発明に係わる洗浄装置では、ウェ−ハ
を洗う度、洗浄ヘッドがウェ−ハより除去された汚染物
質により汚染されてしまうことが推測される。この問題
を解決する方法として、洗浄ヘッド自体を洗浄する機能
を、洗浄装置に設けても良い。図５は、洗浄ヘッド自体
を洗浄する機能を説明するための概略的なフロ−チャ−
トである。In the cleaning apparatus according to the present invention, it is assumed that each time the wafer is washed, the cleaning head is contaminated by contaminants removed from the wafer. As a method for solving this problem, a function of cleaning the cleaning head itself may be provided in the cleaning device. FIG. 5 is a schematic flow chart for explaining the function of cleaning the cleaning head itself.
It is.
【００２７】図４に示した供給系には、洗浄ヘッド２１
に洗浄液を選択して供給できるように、制御装置５６に
より開閉制御されるバルブ５４Ａ〜５４Ｄが設けられて
いる。そこで、制御装置５６に、次に説明するような機
能を組み込む。The supply system shown in FIG.
The valves 54A to 54D that are opened and closed by the control device 56 are provided so that the cleaning liquid can be selectively supplied to the cleaning device. Therefore, a function described below is incorporated in the control device 56.
【００２８】即ち、図５に示すように、まず、ウェ−ハ
の洗浄を行う（ｓｔ１）。このステップでは、例えば図
４に示すバルブ５４Ｃを開け、硫酸（Ｈ2 ＳＯ4 ）を洗
浄ヘッド２１に供給し、図２および図３を参照して説明
した方法によってウェ−ハを洗浄する。ウェ−ハの洗浄
を終えたらバルブ５４Ｃを閉める。これでウェ−ハ１枚
の洗浄が終了する。That is, as shown in FIG. 5, first, the wafer is cleaned (st1). In this step, for example, the valve 54C shown in FIG. 4 is opened, sulfuric acid (H 2 SO 4 ) is supplied to the cleaning head 21, and the wafer is cleaned by the method described with reference to FIGS. When cleaning of the wafer is completed, the valve 54C is closed. This completes the cleaning of one wafer.
【００２９】所定の洗浄枚数を、例えば５枚等と予め設
定しておき、ｓｔ１で行われた洗浄数をカウントし、ウ
ェ−ハの洗浄枚数を所定数終了したか、否かを判断する
（ｓｔ２）。所定数終了していない場合には、ｓｔ１に
戻り、次のウェ−ハの洗浄を行う。The predetermined number of cleanings is set in advance to, for example, five, and the number of cleanings performed in st1 is counted, and it is determined whether or not the predetermined number of wafers has been cleaned (step S1). st2). If the predetermined number has not been completed, the process returns to st1, and the next wafer is washed.
【００３０】また所定数終了した場合には、洗浄ヘッド
の洗浄を行う（ｓｔ３）。このステップでは、例えば図
４に示すバルブ５４Ａやバルブ５４Ｂ等を開け、フッ酸
（ＨＦ）および硝酸（ＨＮＯ3 ）を洗浄ヘッド２１に供
給して、洗浄ヘッド２１に付着していると推定されるＳ
ｉやＳｉＯ2 等のパ−ティクルを溶解する。この後、バ
ルブ５４Ａやバルブ５４Ｂを閉め、次いで、バルブ５４
Ｄを開け、超純水を洗浄ヘッド２１内に残っているフッ
酸（ＨＦ）や、硝酸（ＨＮＯ3 ）等を洗い流す。このよ
うに、洗浄ヘッド２１に付着しているパ−ティクルを溶
解して、洗い流すことにより、洗浄ヘッド２１を洗浄で
きる。When a predetermined number of cleanings have been completed, the cleaning head is cleaned (st3). In this step, for example, the valve 54A and the valve 54B shown in FIG. 4 are opened, and hydrofluoric acid (HF) and nitric acid (HNO 3 ) are supplied to the cleaning head 21 and it is estimated that the hydrofluoric acid (HF) and nitric acid (HNO 3 ) adhere to the cleaning head 21. S
i and SiO 2 or the like of the path - to dissolve the Tcl. Thereafter, the valve 54A and the valve 54B are closed, and then the valve 54A and the valve 54B are closed.
D is opened, and ultrapure water is washed away with hydrofluoric acid (HF), nitric acid (HNO 3 ), and the like remaining in the cleaning head 21. As described above, the cleaning head 21 can be cleaned by dissolving and washing away the particles attached to the cleaning head 21.
【００３１】洗浄ヘッドの洗浄が終了したら、ウェ−ハ
の洗浄を続行するか、否かを判断する（ｓｔ３）。ウェ
−ハの洗浄を行う場合には、ｓｔ１に戻り、次のウェ−
ハの洗浄を行う。またウェ−ハの洗浄を行なわない場合
には、例えば洗浄を終了する。After the cleaning of the cleaning head is completed, it is determined whether the cleaning of the wafer is to be continued or not (st3). When cleaning the wafer, return to st1 and repeat the next wafer.
Perform cleaning of c. If the wafer is not to be cleaned, the cleaning is terminated, for example.
【００３２】上記のような、洗浄ヘッド２１自体を洗浄
する機能を、洗浄装置に持たせれば、洗浄ヘッド２１
を、常に清浄な状態とでき、洗浄ヘッド２１に付着した
汚染物質による、ウェ−ハへの逆汚染を防止できる。図
６は、第１の実施例に係わる洗浄装置の支持部の拡大
図、図７は第２の実施例に係わる洗浄装置の支持部の拡
大図である。If the cleaning device has the function of cleaning the cleaning head 21 itself as described above, the cleaning head 21
Can be kept in a clean state at all times, and it is possible to prevent the wafer from being reversely contaminated by contaminants attached to the cleaning head 21. FIG. 6 is an enlarged view of a support section of the cleaning apparatus according to the first embodiment, and FIG. 7 is an enlarged view of a support section of the cleaning apparatus according to the second embodiment.
【００３３】図６に示すように、第１の実施例に係わる
洗浄装置では、支持部３とウェ−ハ１との間に、透水性
を持つ弾性体、例えば多孔質としたポリフッ化エチレン
で洗浄ヘッド２１を構成した。As shown in FIG. 6, in the cleaning apparatus according to the first embodiment, an elastic body having water permeability, for example, a porous polyethylene fluoride, is provided between the support portion 3 and the wafer 1. The cleaning head 21 was configured.
【００３４】図７に示すように、第２の実施例に係わる
洗浄装置では、洗浄ヘッド２１を、例えばナイロンで構
成されたブラシとした。このように、洗浄ヘッド２１を
ブラシとしても、ウェ−ハ１の周辺部を洗浄および保持
することができる。さらに、洗浄液を洗浄ヘッド２１に
均一に供給するために、図７に示すように、供給口２３
を、洗浄ヘッド２１の上側、下側それぞれに分岐させて
も良い。As shown in FIG. 7, in the cleaning apparatus according to the second embodiment, the cleaning head 21 is a brush made of, for example, nylon. Thus, even if the cleaning head 21 is a brush, the peripheral portion of the wafer 1 can be cleaned and held. Further, in order to uniformly supply the cleaning liquid to the cleaning head 21, as shown in FIG.
May be branched to the upper side and the lower side of the cleaning head 21, respectively.
【００３５】図８は、ウェ−ハ洗浄後、パ−ティクルの
残置状態を調べた結果を示す図である。線Ｉは従来の洗
浄装置で洗浄したウェ−ハを、線IIはこの発明に係わる
洗浄装置で洗浄したウェ−ハをそれぞれ示している。FIG. 8 is a view showing the result of examining the state of remaining particles after wafer cleaning. Line I indicates a wafer cleaned by the conventional cleaning apparatus, and line II indicates a wafer cleaned by the cleaning apparatus according to the present invention.
【００３６】図８に示すように、従来の洗浄装置で洗浄
したウェ−ハでは、ウェ−ハの中央部より、その周辺部
にパ−ティクルが多く残っている結果が得られた（図で
は周辺部が、パ−ティクル数で約２桁程多い）。しか
し、この発明に係わる洗浄装置で洗浄したウェ−ハは、
特にその周辺部において、パ−ティクル数が減少し、そ
の周辺部においても、ウェ−ハ中央部と略同程度のパ−
ティクル数となる結果が得られた。As shown in FIG. 8, in the case of the wafer cleaned by the conventional cleaning device, a result was obtained in which a larger amount of particles remained in the peripheral portion than in the central portion of the wafer (in the figure, the result is shown in FIG. 8). The number of particles in the peripheral part is about two digits larger). However, the wafer cleaned by the cleaning device according to the present invention is:
In particular, the number of particles decreases in the peripheral area, and the number of particles in the peripheral area is substantially the same as that of the central part of the wafer.
Tickle number results were obtained.
【００３７】[0037]
【発明の効果】以上説明したように、この発明によれ
ば、ウェ−ハの表面および裏面の周辺部とともにその側
面をも洗浄できる半導体ウェ−ハ洗浄装置を提供でき
る。As described above, according to the present invention, it is possible to provide a semiconductor wafer cleaning apparatus capable of cleaning not only the peripheral portions of the front and back surfaces of the wafer but also the side surfaces thereof.
【図１】図１はこの発明の第１の実施例に係わるウェ−
ハ洗浄装置の平面図。FIG. 1 is a view showing a way according to a first embodiment of the present invention;
C is a plan view of the cleaning device.
【図２】図２はこの発明の第１の実施例に係わるウェ−
ハ洗浄装置の一部を断面として示した側面図。FIG. 2 is a perspective view showing a way according to the first embodiment of the present invention;
3 is a side view showing a part of the cleaning device as a cross section. FIG.
【図３】図３はこの発明に係わるウェ−ハ洗浄装置によ
る洗浄方法を説明するための図で、（ａ）〜（ｆ）はそ
れぞれ洗浄工程順に示した平面図。FIGS. 3A to 3F are views for explaining a cleaning method using a wafer cleaning apparatus according to the present invention, and FIGS. 3A to 3F are plan views showing the cleaning steps in order.
【図４】図４はこの発明に係わるウェ−ハ洗浄装置の洗
浄液供給系を示す図。FIG. 4 is a view showing a cleaning liquid supply system of the wafer cleaning apparatus according to the present invention.
【図５】図５はこの発明に係わるウェ−ハ洗浄装置が有
する洗浄ヘッド自体の洗浄機能を説明するためのフロ−
チャ−ト。FIG. 5 is a flow chart for explaining a cleaning function of a cleaning head itself of the wafer cleaning apparatus according to the present invention.
Chart.
【図６】図６はこの発明の第１の実施例に係わるウェ−
ハ洗浄装置が有する支持部の拡大図。FIG. 6 is a view showing a way according to the first embodiment of the present invention;
FIG. 3 is an enlarged view of a support portion of the cleaning device.
【図７】図７はこの発明の第２の実施例に係わるウェ−
ハ洗浄装置が有する支持部の拡大図。FIG. 7 is a view showing a way according to a second embodiment of the present invention;
FIG. 3 is an enlarged view of a support portion of the cleaning device.
【図８】図８はウェ−ハ洗浄後、パ−ティクルの残置状
態を調べた結果を示す図。FIG. 8 is a view showing a result of examining a remaining state of particles after wafer cleaning.
【図９】図９は従来のウェ−ハ洗浄装置を示す図。FIG. 9 is a view showing a conventional wafer cleaning apparatus.
【図１０】図１０はその他の従来のウェ−ハ洗浄装置を
示す図。FIG. 10 is a view showing another conventional wafer cleaning apparatus.
１…ウェ−ハ、３，３Ａ〜３Ｂ…支持部、５Ａ〜５Ｄ…
軸、７Ａ〜７Ｄ…移動機構、１１…ステ−ジ、１３Ａ〜
１３Ｄ…レ−ル、１５Ａ〜１５Ｄ…移動台、１７Ａ〜１
７Ｄ…支柱、２１、２１Ａ〜２１Ｄ…洗浄ヘッド、２３
…洗浄液供給口、２５Ａ，２５Ｂ…ノズル、５０Ａ〜５
０Ｄ…タンク、５４Ａ〜５４Ｄ…バルブ、５６…制御装
置。1. Wafer, 3, 3A-3B ... Support, 5A-5D ...
Shaft, 7A-7D: moving mechanism, 11: stage, 13A-
13D: Rail, 15A to 15D: Moving table, 17A to 1
7D: prop, 21, 21A to 21D: cleaning head, 23
... Cleaning liquid supply port, 25A, 25B ... Nozzle, 50A-5
0D: tank, 54A to 54D: valve, 56: control device.
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/304 643 H01L 21/304 644 H01L 21/304 648 ──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. 7 , DB name) H01L 21/304 643 H01L 21/304 644 H01L 21/304 648
Claims (4)
手段と、前記支持手段の前記ウェ−ハとの接触部分に設
けられた前記ウェ−ハの少なくとも側面を含む周辺部を
洗浄する洗浄手段と、を具備することを特徴とする半導
体ウェ−ハ洗浄装置。1. A cleaning device for supporting a peripheral portion of a semiconductor wafer, and a cleaning portion for cleaning a peripheral portion including at least a side surface of the wafer provided at a contact portion of the supporting device with the wafer. Means for cleaning a semiconductor wafer.
成されることを特徴とする請求項１に記載の半導体ウェ
−ハ洗浄装置。2. The semiconductor wafer cleaning apparatus according to claim 1, wherein said cleaning means is made of a water-permeable elastic body.
ることを特徴とする請求項１に記載の半導体ウェ−ハ洗
浄装置。3. The semiconductor wafer cleaning apparatus according to claim 1, wherein said cleaning means is constituted by a brush.
浄液を前記洗浄手段に供給する第１の洗浄液供給手段
と、前記ウェ−ハを所定枚数洗浄した後、この洗浄手段
を洗浄するための第２の洗浄液を前記洗浄手段に供給す
る第２の洗浄液供給手段と、を具備することを特徴とす
る請求項１に記載の半導体ウェ−ハ洗浄装置。4. A first cleaning liquid supply means for supplying a first cleaning liquid for cleaning the wafer to the cleaning means, and after cleaning a predetermined number of wafers, the cleaning means is cleaned. 2. A semiconductor wafer cleaning apparatus according to claim 1, further comprising: a second cleaning liquid supply unit for supplying a second cleaning liquid to the cleaning unit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11763991A JP3164597B2 (en) | 1991-05-22 | 1991-05-22 | Semiconductor wafer cleaning equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11763991A JP3164597B2 (en) | 1991-05-22 | 1991-05-22 | Semiconductor wafer cleaning equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04345029A JPH04345029A (en) | 1992-12-01 |
| JP3164597B2 true JP3164597B2 (en) | 2001-05-08 |
Family
ID=14716677
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11763991A Expired - Fee Related JP3164597B2 (en) | 1991-05-22 | 1991-05-22 | Semiconductor wafer cleaning equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3164597B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3590250B2 (en) * | 1997-11-18 | 2004-11-17 | 東京エレクトロン株式会社 | Substrate processing method and substrate processing apparatus |
| JP2009094534A (en) * | 2008-12-26 | 2009-04-30 | Dainippon Screen Mfg Co Ltd | Etching treatment method of substrate peripheral edge part, and etching treatment apparatus of substrate peripheral edge part |
| JP6630213B2 (en) * | 2016-03-30 | 2020-01-15 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate processing apparatus, substrate processing method, and program recording medium |
-
1991
- 1991-05-22 JP JP11763991A patent/JP3164597B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04345029A (en) | 1992-12-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5723019A (en) | Drip chemical delivery method and apparatus | |
| US6274059B1 (en) | Method to remove metals in a scrubber | |
| US5698038A (en) | Method for wafer carrier cleaning | |
| US5762084A (en) | Megasonic bath | |
| US6358325B1 (en) | Polysilicon-silicon dioxide cleaning process performed in an integrated cleaner with scrubber | |
| JP3701126B2 (en) | Substrate cleaning method and polishing apparatus | |
| JP2007258462A (en) | Apparatus and method for processing substrate | |
| JP2001185523A (en) | Method and apparatus for cleaning/drying hydrophobic wafer | |
| JP2003502840A (en) | Method and system for cleaning a semiconductor wafer | |
| JP2006278392A (en) | Substrate cleaning method and substrate cleaning device | |
| US6921494B2 (en) | Backside etching in a scrubber | |
| EP0784336A2 (en) | Improvements in or relating to the fabrication and processing of semiconductor devices | |
| JP3164597B2 (en) | Semiconductor wafer cleaning equipment | |
| JP3413726B2 (en) | Wafer cleaning method | |
| JP4507365B2 (en) | Substrate edge cleaning equipment | |
| JPH0697136A (en) | Method and equipment for cleaning substrate | |
| JP2002131889A (en) | Cleaning method and cleaning device of quartz substrate for photomask | |
| JP2002367945A (en) | Wafer cleaning system with wafer transfer robot | |
| JP2767165B2 (en) | Wafer cleaning tank | |
| JP2000040684A (en) | Cleaning equipment | |
| JPH07130694A (en) | Wafer cleaner | |
| JPH07115078A (en) | Method and equipment for processing substrate | |
| JP3099907B2 (en) | Semiconductor processing equipment | |
| JPH06120186A (en) | Wafer carrier washing method | |
| JP3229951B2 (en) | Wafer carrier cleaning equipment |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |