JP3163160B2 - Heat treatment equipment - Google Patents

Heat treatment equipment

Info

Publication number
JP3163160B2
JP3163160B2 JP11413092A JP11413092A JP3163160B2 JP 3163160 B2 JP3163160 B2 JP 3163160B2 JP 11413092 A JP11413092 A JP 11413092A JP 11413092 A JP11413092 A JP 11413092A JP 3163160 B2 JP3163160 B2 JP 3163160B2
Authority
JP
Japan
Prior art keywords
gas
exhaust
reaction tube
combustion
pipe
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP11413092A
Other languages
Japanese (ja)
Other versions
JPH05291268A (en
Inventor
修司 米満
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Kokusai Electric Inc
Original Assignee
Hitachi Kokusai Electric Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Kokusai Electric Inc filed Critical Hitachi Kokusai Electric Inc
Priority to JP11413092A priority Critical patent/JP3163160B2/en
Publication of JPH05291268A publication Critical patent/JPH05291268A/en
Application granted granted Critical
Publication of JP3163160B2 publication Critical patent/JP3163160B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は半導体プロセスで非常に
多く使用されているH2 ガスを用いたアニール装置に関
する。
The present invention relates to a annealing apparatus using the H 2 gas being used very much in the semiconductor process.

【0002】[0002]

【従来の技術】半導体装置のプロセスでH2 ガスによる
アニール工程がある。このアニール工程は、ウェーハ上
に生成されたアルミ配線用のアルミ蒸着膜にO2 が含ま
れると、微細加工で配線されたアルミ線が経時変化で断
線する原因になり、品質低下につながるため、アルミ膜
を微細加工するエッチングの前又は後でH2 ガスによる
アニールでO2 を還元除去するための処理工程である。
この処理はH2 ガス雰囲気中、400〜500℃で行わ
れる。
2. Description of the Related Art In a semiconductor device process, there is an annealing step using H 2 gas. In this annealing step, if O 2 is contained in the aluminum deposited film for aluminum wiring generated on the wafer, the aluminum wire wired by the fine processing may be broken due to aging, leading to quality deterioration, This is a processing step for reducing and removing O 2 by annealing with H 2 gas before or after etching for fine processing of the aluminum film.
This treatment is performed at 400 to 500 ° C. in an H 2 gas atmosphere.

【0003】図2は従来のアニール装置の1例の構成を
示す簡略断面図である。この従来のアニール装置は、外
気と内部を隔離しウェーハ10を反応処理する反応管3
と、この反応管3内を加熱するヒータ1と、前記反応管
3内の熱分布を均一にする均熱管2と、ウェーハ10を
装填するボート8と、H2 ガスをガス導入管6より反応
管3内へ流す炉口部4と、ウェーハ10が充填されたボ
ート8を反応管3内へロード,アンロードする昇降機構
9と、反応管3内の処理後のH2ガスを排出する排気管
18と、高電圧をかけて火花をとばす高電圧電極21
と、その火花で種火の働きをする水素種火ライン22
と、その種火により排気管18より排気されるH2 ガス
を燃焼処理する水素燃焼パイプ26と、これらを収納す
る燃焼箱20と、燃焼箱20内の雰囲気を常に強制排気
している排気ダクト25で構成されている。
FIG. 2 is a simplified sectional view showing the structure of an example of a conventional annealing apparatus. This conventional annealing apparatus has a reaction tube 3 for isolating the outside air from the inside and reacting the wafer 10.
When a heater 1 for heating the reaction tube 3, the soaking tube 2 to obtain a uniform heat distribution in the inner reaction tube 3, the boat 8 for loading the wafer 10, the reaction of H 2 gas from the gas inlet pipe 6 A furnace port 4 for flowing into the tube 3, an elevating mechanism 9 for loading and unloading the boat 8 filled with the wafer 10 into and from the reaction tube 3, and an exhaust for discharging the processed H 2 gas in the reaction tube 3. A tube 18 and a high voltage electrode 21 for applying a high voltage to blow a spark
And a hydrogen pilot line 22 that acts as a pilot with the spark
A hydrogen combustion pipe 26 for combusting H 2 gas exhausted from the exhaust pipe 18 due to the seed fire, a combustion box 20 for accommodating the hydrogen combustion pipe 26, and an exhaust duct for constantly forcibly exhausting the atmosphere in the combustion box 20 25.

【0004】炉口部4にはH2 ガスのリークを防ぐた
め、外気と隔離するベローズ17を使用しており、昇降
機構9は、ベローズ17の上部に設けられウェーハ10
が装填されたボート8をベロズ17内から出し入れする
ためにベローズ17を縮めたり、反応管3とベローズ部
分を密封するための昇降機構9aと、ベローズ17の下
部に設けられウェーハ10が装填されたボート8を反応
管3内へロード,アンロードする昇降機構9bとよりな
る。
In order to prevent H 2 gas leakage, a bellows 17 is used in the furnace port 4 to isolate the wafer from the outside air.
An elevating mechanism 9a for retracting the bellows 17 for sealing the reaction tube 3 and the bellows portion, and a wafer 10 mounted on the lower portion of the bellows 17 for loading and unloading the boat 8 loaded with. An elevating mechanism 9b loads and unloads the boat 8 into and from the reaction tube 3.

【0005】上記従来のアニール装置では、排気管18
より排気される処理後のH2 ガスは燃焼箱20内に導入
された水素燃焼パイプ26より排気され、高電圧電極2
1で生じた火花により着火した水素種火ライン22を火
種として水素ガス燃焼部23で燃焼処理される。
In the conventional annealing apparatus, the exhaust pipe 18
The H 2 gas after the treatment is exhausted from the hydrogen combustion pipe 26 introduced into the combustion chamber 20,
The combustion process is performed in the hydrogen gas combustion unit 23 using the hydrogen seed line 22 ignited by the spark generated in step 1 as a fire.

【0006】[0006]

【発明が解決しようとする課題】しかしながら、上記従
来例にあっては、H2 ガスが燃焼箱20内の水素燃焼部
23で燃焼中に排気ダクト25から常に強制排気してい
る排気設備が異常・故障で停止すると、燃焼箱20内の
酸素が急激に欠乏し、不完全燃焼からしまいには炎が消
えてしまい、燃焼箱20内にH2 ガスが留り爆発の危険
性が極めて高くなるという課題がある。
However, in the above-mentioned conventional example, the exhaust equipment in which H 2 gas is constantly forcibly exhausted from the exhaust duct 25 during combustion in the hydrogen combustion part 23 in the combustion chamber 20 is abnormal. · If you stop a malfunction, rapidly depleted of oxygen in the combustion box 20, will be at length disappears flames from incomplete combustion, the risk of the H 2 gas is stopped explosion becomes very high in the combustion box 20 There is a problem that.

【0007】[0007]

【課題を解決するための手段】本発明装置は上記の課題
を解決するため、ウェーハを反応処理する反応管3と、
この反応管3内を加熱するヒータ1と、前記反応管3内
2 ガスを流すガス導入管6と、反応管3内を排気す
る排気管5を有する熱処理装置において、排気管5より
排気される処理後のH2 ガスを燃焼する燃焼箱20に、
該箱20の雰囲気を排気している排気ダクト25とは別
に排気停止時に開かれるダンパ機構24を装着してなる
ものである。
In order to solve the above-mentioned problems, the apparatus of the present invention comprises: a reaction tube 3 for reacting a wafer;
A heater 1 for heating the inside of the reaction tube 3;
In a heat treatment apparatus having a gas introduction pipe 6 through which H 2 gas flows through , and an exhaust pipe 5 for exhausting the inside of the reaction pipe 3, a combustion chamber 20 for burning H 2 gas after processing exhausted from the exhaust pipe 5 is provided.
In addition to an exhaust duct 25 that exhausts the atmosphere of the box 20, a damper mechanism 24 that is opened when the exhaust is stopped is mounted.

【0008】[0008]

【作用】このような構成とすることによりH2 ガスの燃
焼中に、排気ダクト25の排気が異常・故障で停止して
も、ダンパ機構24が作動して開かれるので、H2 ガス
燃焼が停止することなく、継続されることになり、H2
ガスによる爆発の危険性が回避できることになる。
With such a configuration, even if the exhaust of the exhaust duct 25 is stopped due to an abnormality or failure during the combustion of the H 2 gas, the damper mechanism 24 is activated and opened, so that the H 2 gas combustion is stopped. It will continue without stopping, and H 2
The danger of gas explosion can be avoided.

【0009】[0009]

【実施例】図1は本発明装置の1実施例の構成を示す簡
略断面図である。図1中、3は外気と内部を隔離しウェ
ーハ10を反応処理する反応管、1はこの反応管3内を加
熱するヒータ、2は反応管3内の熱分布を均一にする均
熱管、8はウェーハ10を装填するボート、4は反応管3
内を真空にし更にH2 ガスをガス導入管6より反応管3
内へ流す炉口部、9はウェーハ10が装填されたボート8
を反応管3内へロード,アンロードする昇降機構であ
る。
FIG. 1 is a simplified sectional view showing the structure of an embodiment of the apparatus according to the present invention. In FIG. 1, 3 is a reaction tube for isolating the inside from the outside air and performing a reaction process on the wafer 10, 1 is a heater for heating the inside of the reaction tube 3, 2 is a soaking tube for uniforming the heat distribution in the reaction tube 3, and 8 Is a boat for loading the wafer 10, and 4 is a reaction tube 3.
The inside of the reactor is evacuated, and H 2 gas is supplied through the gas inlet tube 6 to the reaction tube 3.
Furnace port to flow into, 9 is boat 8 loaded with wafer 10
Is loaded into the reaction tube 3 and unloaded.

【0010】炉口部4を構成する反応管3のフランジと
これに対向するフランジ付き排気用筒28のフランジ2
8Aとの間及びシールフランジ13aと反応管に対向す
るフランジ付き排気用筒28のフランジ28Bとの間に
はそれぞれ内, 外側の2重のOリング11,11が挿設
され、各2重のOリング11,11間の空間部は真空排
気管7を介して真空排気装置14に連通していると共
に、シールフランジ13aと昇降機構9に取付けられた
ベースフランジ13bとの間に弾性体12が挿着されて
なる。
[0010] The flange of the reaction tube 3 constituting the furnace port 4 and the flange 2 of the exhaust cylinder 28 with a flange opposed thereto.
8A, and between the seal flange 13a and the flange 28B of the flanged exhaust tube 28 facing the reaction tube, double inner and outer O-rings 11 are inserted, respectively. The space between the O-rings 11 and 11 communicates with the evacuation device 14 via the evacuation pipe 7, and the elastic body 12 is provided between the seal flange 13 a and the base flange 13 b attached to the elevating mechanism 9. It is inserted.

【0011】炉口部4を構成するフランジ付き排気用筒
28に反応管3内を真空排気する真空排気管5が連結さ
れ、これにバルブ15を介して真空排気装置16が連結
されている。真空排気管5にバルブ19を介して連結さ
れた水素燃焼パイプ26が燃焼箱20内に導入され、燃
焼箱20内には高電圧が印加されて火花を飛ばす高電圧
電極21が配設され、かつH2 ガスが供給されて高電圧
電極21で生じた火花により着火される水素種火ライン
22が引込まれている。
A vacuum exhaust pipe 5 for evacuating the inside of the reaction tube 3 is connected to a flanged exhaust tube 28 constituting the furnace port 4, and a vacuum exhaust device 16 is connected to this via a valve 15. A hydrogen combustion pipe 26 connected to the evacuation pipe 5 via a valve 19 is introduced into the combustion chamber 20, and a high voltage electrode 21 for applying a high voltage to blow a spark is disposed in the combustion chamber 20. In addition, a hydrogen seed line 22 that is ignited by a spark generated at the high-voltage electrode 21 when H 2 gas is supplied is drawn in.

【0012】燃焼箱20に内部の雰囲気を排気する排気
ダクト25が垂設され、排気ダクト25に強制排気する
ガス処理設備が接続されている。又、燃焼箱20にオー
トダンパ機構24が装着されていおり、ガス処理排気設
備が異常・故障を起こして停止した時、排気ダクト25
内の差圧により作動信号をオートダンパ機構24に送出
する差圧スイッチ27が排気ダクト25に設けられてい
る。
An exhaust duct 25 for exhausting the internal atmosphere is vertically provided in the combustion chamber 20, and a gas processing facility for forcibly exhausting the exhaust gas is connected to the exhaust duct 25. Further, an automatic damper mechanism 24 is mounted on the combustion chamber 20, and when the gas processing and exhaust equipment is stopped due to abnormality or failure, the exhaust duct 25
A differential pressure switch 27 that sends an operation signal to the automatic damper mechanism 24 based on the differential pressure inside the exhaust duct 25 is provided in the exhaust duct 25.

【0013】上記の構成において、水素種火ライン22
にH2 ガスを流し、同時に高電圧電極21に高電圧を印
加して火花を飛ばし、水素種火ライン22に着火させ
る。反応管3内より排気されたH2 ガスは炉口部4のフ
ランジ付き排気用筒28,真空排気管5,弁19及び水
素燃焼パイプ26を通り、水素ガス燃焼部23にて燃焼
処理される。
In the above configuration, the hydrogen seed line 22
It was flushed with H 2 gas, skip spark by applying a high voltage to the high voltage electrode 21 at the same time, to ignite the hydrogen species fire line 22. The H 2 gas exhausted from the inside of the reaction tube 3 passes through a flanged exhaust tube 28 of the furnace port 4, a vacuum exhaust pipe 5, a valve 19 and a hydrogen combustion pipe 26, and is burned in a hydrogen gas combustion section 23. .

【0014】燃焼箱20内の雰囲気は排気ダクト25か
らガス処理排気設備により強制排気される。この排気ダ
クト25に設けられた差圧スイッチ27は、随時排気ダ
クト25に接続されているガス処理排気設備の運転状態
を監視している。
The atmosphere inside the combustion chamber 20 is forcibly exhausted from an exhaust duct 25 by a gas processing exhaust system. The differential pressure switch 27 provided in the exhaust duct 25 monitors the operation state of the gas processing exhaust equipment connected to the exhaust duct 25 as needed.

【0015】もし何らかの異常で排気ダクト25に接続
されているガス処理排気設備が停止すると、差圧スイッ
チ27がこれを感知し、オートダンパ機構24へ開信号
が出力される。オートダンパ機構24はこの開信号によ
り作動されて開の状態となり、燃焼箱20内の雰囲気を
大気開放し、H2 ガスの燃焼が停止することなく継続さ
れることになり、H2 ガスによる爆発の危険性が回避で
きることになる。
If the gas processing and exhaust equipment connected to the exhaust duct 25 stops due to some abnormality, the differential pressure switch 27 detects this and outputs an open signal to the automatic damper mechanism 24. The auto damper mechanism 24 is activated by this open signal to be in an open state, the atmosphere in the combustion chamber 20 is opened to the atmosphere, and the combustion of the H 2 gas is continued without stopping, and the explosion due to the H 2 gas Danger can be avoided.

【0016】又、本実施例は、各2重のOリング11,
11間の空間部を真空排気装置14により真空排気管7
を通して真空排気することにより各2重のOリング1
1,11に、これを押しつぶす力と、弾性体12による
押しつぶす力が加わり、これら2重のOリング11,1
1がその合力により十分に押しつぶされることになるた
め、ウェーハ10の処理中の圧力 (反応管3内の圧力)
が大気圧でも十分なシール性が確保されることになる。
In this embodiment, each double O-ring 11,
The space between the chambers 11 is evacuated by an evacuation unit 14
Each O-ring 1 is evacuated through
1 and 11, the force of squeezing it and the force of squashing by the elastic body 12 are applied, and these double O-rings 11, 1
Since the resultant 1 is sufficiently crushed by the resultant force, the pressure during the processing of the wafer 10 (the pressure in the reaction tube 3)
However, even at atmospheric pressure, a sufficient sealing property is ensured.

【0017】従って本実施例では、従来使用されていた
ベローズと昇降機構の1つが不要となり、コストダウン
を図ることができる。また、炉口部4の構造を、ベロー
ズ等を用いず、炉口部4に設けた2重のリング状シール
11,11間の空間部を真空排気する構造としたことに
より構造が複雑になることなく、H2 ガスのリーク量を
極力抑え、かつ反応管3内のリークチェックを容易に行
うことが可能となるばかりでなく、H2 ガスのリーク量
の低減により安全性を向上することができる。
Therefore, in this embodiment, one of the bellows and the elevating mechanism used conventionally is not required, and the cost can be reduced. In addition, the structure of the furnace opening 4 is made complicated by evacuating the space between the double ring-shaped seals 11 provided in the furnace opening 4 without using bellows or the like. In addition, it is possible not only to minimize the amount of H 2 gas leak and to easily perform a leak check in the reaction tube 3 but also to improve safety by reducing the amount of H 2 gas leak. it can.

【0018】なお、本発明においては、排気ダクト25
からの強制排気が停止した時、オートダンパ機構24が
開かれればよいので、差圧スイッチ27によりオートダ
ンパ機構24を開く実施例だけに限定されず、例えば強
制排気動作を監視し、動作停止を検出してオートダンパ
機構24を開動作させる構成としてもよい。
In the present invention, the exhaust duct 25
The automatic damper mechanism 24 only needs to be opened when the forced exhaust from the pump is stopped. Therefore, the present invention is not limited to the embodiment in which the automatic damper mechanism 24 is opened by the differential pressure switch 27. For example, the forced exhaust operation is monitored and the operation stop is performed. The automatic damper mechanism 24 may be configured to perform an opening operation upon detection.

【0019】[0019]

【発明の効果】上述のように本発明によれば、H2 ガス
の燃焼中に排気ダクト25の排気が異常・故障で停止し
ても、ダンパ機構24が作動して開かれるのでH2 ガス
燃焼が停止することなく、継続されることになり、H2
ガスによる爆発の危険性を回避することができる。
As described above, according to the present invention, even if the exhaust of the exhaust duct 25 stops due to an abnormality or failure during the combustion of the H 2 gas, the damper mechanism 24 is operated and opened, so that the H 2 gas is opened. Combustion will continue without stopping, and H 2
The danger of gas explosion can be avoided.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明装置の1実施例の構成を示す簡略断面図
である。
FIG. 1 is a simplified sectional view showing the configuration of an embodiment of the device of the present invention.

【図2】従来のアニール装置の1例の構成を示す簡略断
面図である。
FIG. 2 is a simplified sectional view showing a configuration of an example of a conventional annealing apparatus.

【符号の説明】[Explanation of symbols]

1 ヒータ 2 均熱管 3 反応管 4 炉口部 5 真空排気管 6 ガス導入管 7 真空排気管 8 ボート 9 昇降機構 10 ウェーハ 11 リング状シール 12 弾性体 13a シールフランジ 13b ベースフランジ 14 真空排気装置 15 バルブ 16 真空排気装置 20 燃焼箱 21 高電圧電極 22 水素種火ライン 23 水素ガス燃焼部 24 オートダンパ機構 25 排気ダクト 26 水素燃焼パイプ 27 差圧スイッチ 28 フランジ付き排気用筒 DESCRIPTION OF SYMBOLS 1 Heater 2 Heat equalizing pipe 3 Reaction pipe 4 Furnace opening part 5 Vacuum exhaust pipe 6 Gas introduction pipe 7 Vacuum exhaust pipe 8 Boat 9 Elevating mechanism 10 Wafer 11 Ring seal 12 Elastic body 13a Seal flange 13b Base flange 14 Vacuum exhaust device 15 Valve 16 Vacuum Exhaust Device 20 Combustion Chamber 21 High Voltage Electrode 22 Hydrogen Seed Line 23 Hydrogen Gas Combustion Unit 24 Auto Damper Mechanism 25 Exhaust Duct 26 Hydrogen Combustion Pipe 27 Differential Pressure Switch 28 Flanged Exhaust Cylinder

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 ウェーハを反応処理する反応管と、この
反応管内を加熱するヒータと、前記反応管内にH2 ガス
を流すガス導入管と、反応管内を排気する排気管を有す
る熱処理装置において、 排気管より排気される処理後のH2 ガスを燃焼する燃焼
箱に、該箱の雰囲気を排気している排気ダクトとは別に
排気停止時に開かれるダンパ機構を装着してなる熱処理
装置。
1. A heat treatment apparatus having a reaction tube for reacting a wafer, a heater for heating the inside of the reaction tube, a gas introduction tube for flowing H 2 gas into the reaction tube, and an exhaust tube for exhausting the inside of the reaction tube. A heat treatment apparatus comprising: a combustion box that burns H 2 gas after processing exhausted from an exhaust pipe; and a damper mechanism that is opened when the exhaust is stopped, separately from an exhaust duct that exhausts the atmosphere of the box.
JP11413092A 1992-04-06 1992-04-06 Heat treatment equipment Expired - Fee Related JP3163160B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11413092A JP3163160B2 (en) 1992-04-06 1992-04-06 Heat treatment equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11413092A JP3163160B2 (en) 1992-04-06 1992-04-06 Heat treatment equipment

Publications (2)

Publication Number Publication Date
JPH05291268A JPH05291268A (en) 1993-11-05
JP3163160B2 true JP3163160B2 (en) 2001-05-08

Family

ID=14629893

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11413092A Expired - Fee Related JP3163160B2 (en) 1992-04-06 1992-04-06 Heat treatment equipment

Country Status (1)

Country Link
JP (1) JP3163160B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101564433B1 (en) 2014-04-04 2015-11-05 주식회사 대성아트론 A rotationable knife assembly for electric device having a rotationable knife
KR101564436B1 (en) 2014-04-23 2015-11-05 주식회사 대성아트론 A manufacturing mold of a rotationable shaft assembly for a rotationable knife of electric device and thereof
KR101574654B1 (en) * 2015-08-24 2015-12-04 주식회사 아라 Rotation Shaft Assembly for Mounting A Knife of A Mixer
KR20160044728A (en) * 2014-10-16 2016-04-26 이치석 Stirred for Limnology slush refrigerator wings coupled device
JP2016209538A (en) * 2015-05-07 2016-12-15 李文欽 Agitation vessel
CN106403603A (en) * 2016-10-12 2017-02-15 安徽贝意克设备技术有限公司 Rapid heat shock recirculation furnace

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001203211A (en) 2000-01-20 2001-07-27 Hitachi Kokusai Electric Inc Hydrogen annealing method and its device
JP2006344984A (en) * 2006-07-06 2006-12-21 Hitachi Kokusai Electric Inc Hydrogen annealing treatment method and its device
JP5700646B2 (en) * 2011-01-08 2015-04-15 株式会社日立国際電気 Hydrogen annealing treatment method and hydrogen annealing treatment apparatus
CN106935531A (en) * 2015-12-31 2017-07-07 无锡华润华晶微电子有限公司 A kind of method of Equipment for Heating Processing and its treatment wafer
CN113443820A (en) * 2021-07-03 2021-09-28 四川神光石英科技有限公司 Material rack, reaction kettle and device for quartz glass hydrogen permeation process

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101564433B1 (en) 2014-04-04 2015-11-05 주식회사 대성아트론 A rotationable knife assembly for electric device having a rotationable knife
KR101564436B1 (en) 2014-04-23 2015-11-05 주식회사 대성아트론 A manufacturing mold of a rotationable shaft assembly for a rotationable knife of electric device and thereof
KR20160044728A (en) * 2014-10-16 2016-04-26 이치석 Stirred for Limnology slush refrigerator wings coupled device
JP2016209538A (en) * 2015-05-07 2016-12-15 李文欽 Agitation vessel
KR101574654B1 (en) * 2015-08-24 2015-12-04 주식회사 아라 Rotation Shaft Assembly for Mounting A Knife of A Mixer
CN106403603A (en) * 2016-10-12 2017-02-15 安徽贝意克设备技术有限公司 Rapid heat shock recirculation furnace
CN106403603B (en) * 2016-10-12 2018-07-06 安徽贝意克设备技术有限公司 A kind of quick heat shock cycling stove

Also Published As

Publication number Publication date
JPH05291268A (en) 1993-11-05

Similar Documents

Publication Publication Date Title
US6527884B1 (en) Hydrogen annealing process and apparatus therefor
JP3163160B2 (en) Heat treatment equipment
KR100246115B1 (en) Processing apparatus in low pressure and its method
JP5225862B2 (en) High pressure gas annealing apparatus and method
KR100280689B1 (en) Heat treatment device
JP3468577B2 (en) Heat treatment equipment
KR100591723B1 (en) Oxidation treatment method and oxidation treatment device
WO2002082523A1 (en) Heat treating method and heat treating device
JP4924676B2 (en) Gas port structure and processing apparatus
US20090064765A1 (en) Method of Manufacturing Semiconductor Device
JP2001015440A (en) Method and device for manufacturing semiconductor
JP3181308B2 (en) Heat treatment equipment
JP2001330534A (en) Method of leak check for decompression treatment device and decompression treatment device
JP3351521B2 (en) Heat treatment equipment
JP2006261362A (en) Substrate-treating device
JP2007027772A (en) Semiconductor manufacturing equipment
JP3072226B2 (en) Decaborane supply method in decaborane gas supply system
JP3304338B2 (en) Heat treatment apparatus and heat treatment method
JP4304354B2 (en) Semiconductor device processing method
JPH0586478A (en) Connection device of vacuum exhaust pipe and gas introduction pipe in vapor growth equipment
JP3227280B2 (en) Heat treatment equipment
JP2008210852A (en) Substrate treating equipment and method of manufacturing semiconductor device
JP4490636B2 (en) Semiconductor manufacturing apparatus and semiconductor device manufacturing method
JP2696920B2 (en) Atmosphere treatment equipment
JP3437308B2 (en) Heat treatment furnace for semiconductor manufacturing equipment

Legal Events

Date Code Title Description
FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080223

Year of fee payment: 7

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090223

Year of fee payment: 8

LAPS Cancellation because of no payment of annual fees