JP3154090B2 - Transistor with built-in resistor - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [0001] The present invention relates to a single transistor.
Resistor built-in resistor
Regarding the transistor. [0002] 2. Description of the Related Art Generally, a video composed of various electronic circuits is used.
Electronic devices such as tape recorders integrate their constituent circuits.
When the circuit (IC) becomes disadvantageous in function,
There is a case where it is difficult to make an IC by setting circuit constants. I
In C, a diffused resistor is used as a resistor, and a plurality of transistors are used.
Is formed, but each element is isolated by isolation.
Since it is electrically isolated from other elements, parasitic transistors
Star effects cannot be ignored. Also, in IC
Transistor with good frequency characteristics, fast switching speed
Transistor or high voltage, large current transistor
Is difficult to form. Therefore, it is suitable for
In electronic devices including circuits that do not
Configure the circuit using the individual components of the resistor, and
Mounting the parts on a printed circuit board together with the IC etc.
Is being done. [0003] Next, FIG. 7 shows a relay composed of individual parts.
1 shows a drive circuit. This relay drive circuit
The transistor circuit 2 forming the switching circuit is installed
I have. That is, the base of the transistor 4 is connected via the resistor 6.
An input terminal 8A is formed, and the input terminal
8B is formed, and a resistor is formed between the emitter and the base.
The input terminal 8B is connected to a reference potential (G
ND) common to the terminal 8C. And the transi
A parallel connection between the collector of the star 4 and the voltage application terminal 12
To the diode 1 together with the exciting coil 14A of the relay 14.
6 are connected. In this relay drive circuit,
Input voltage V applied between input terminals 8A and 8B_iBy
When the transistor 4 switches, the relay
The exciting current of the exciting coil 14A is controlled and the relay
The contact 14B opens and closes. [0004] FIG. 8 is a schematic diagram showing an in-plane made up of individual parts.
3 shows a barter circuit. This inverter circuit has the configuration shown in FIG.
Transistor circuit 2 is installed, the relay 14 and the
A resistor 18 is connected in place of the diode 16
The output terminal 20 is formed at the collector of the transistor 4.
Have been. Therefore, in this inverter circuit, the input terminal
Input voltage V applied to 8A and 8B_iIs transistor 4
And the inverted output V_OIs the output terminal 20
Taken out. [0005] SUMMARY OF THE INVENTION
In an Eve circuit or an inverter circuit, the transistor circuit 2
Although the applications and functions are different, the circuit configuration is the same
It is. Such a transistor circuit 2 is composed of individual components.
If formed, on the printed circuit board together with the transistor 4
Since it is formed by mounting the resistors 6 and 10 individually,
The mounting surface of the printed circuit board in proportion to the number of
In addition to the increase in product area, the wiring
In addition to hindering the miniaturization and weight reduction of slave devices,
Power supply for video tape recorders and the like that require
It becomes expensive with child equipment. [0006] By the way, a transistor composed of individual parts
In the star circuit 2, the resistor 6 is connected to the transistor 4
Base input current limiting resistor, depending on its resistance
Base current I required for conduction of transistor 4_BIs determined
It is. The resistor 10 is a pull-down resistor, and is a transistor
When there is no input at 4, the base potential is set by the resistance value.
By dropping to the emitter potential, the transistor 4 is blocked.
It is to be disconnected. The resistance 18 is a load resistance
And the resistance value is R_L, And the resistances of the resistors 6 and 10
₁ , R_Two Then, the resistance value R₁ Is the load current I_L(= V_CC
/ R_L) Is sufficient to carry the base current I._BTo get
It must be a value. And with transistor 4
Is the base current I_BThe collector current I_CIs a tran
The current amplification factor h of the transistor 4_FEAnd base current I_BProduct h_FE
・ I_BGiven by_B> V_CC/ H_FE・ R_LArticle
Must be satisfied, and the current amplification factor h_FEIs the minimum value
And the base current I_BGives a margin of 2 to 5 times the calculated value
It is done to have. In this case, the current flows through the resistor 10.
Current I_B2Is the base-emitter voltage V_BEAnd resistance
R_Two To V_BE/ R_Two And current loss,
Base current I of a value that compensates for this loss_BAnd resistance value R_Two
Is set. These constants are set in the transistor circuit
2 is performed in accordance with the circuit conditions to be installed.
It is set individually for each circuit. In particular,
The parameters at the time of switching of the transistor 4 are as follows.
Current amplification factor h_FEIt is necessary to take a large margin to decide on
With proper switching when configured with individual components
To obtain the characteristics, the collector-emitter voltage V_CELower
Current amplification factor h_FEIs required, but the value fluctuates.
Large and generally not guaranteed,
Base current I calculated at the minimum value of the expressed voltage_B2
Base current I to ~ 5 times_BIs set. this
Such a coarse numerical setting is allowed because the transistor 4
In the saturation region, the base current I_BThis for the increase of
Current I_CIs extremely small, and the resistance R₁ of
Collector current I due to setting error_CThat the change in
According to In the transistor circuit 2, the input voltage
Pressure V_iIs the base-emitter voltage V of the transistor 4_BE
, The base current I_BFlows and its base current I
_BInput voltage immediately before the threshold voltage V_thTo be
And the threshold voltage V_thIs         V_th= R₁ ・ I_B2+ R_Two ・ I_B2                      ... (1) And the current I_B2Is I_B2= V_BE/ R_Two So, this
Substituting this into equation (1) gives [0008] (Equation 1)## EQU1 ## Therefore, the threshold voltage V_thIs
Resistance value R₁ , R_Two Determined by the ratio of
Transistor circuit without down resistance (resistance 10)
Threshold voltage V_th(R₁ / R_Two +1) times
You can see that Here, the base of transistor 4
Emitter voltage V_BEIs about 0.6V, so the threshold
Voltage V_thIs [0010] (Equation 2) And the input voltage V_iIs the threshold voltage V_th
, The base voltage V of the transistor 4_BIs 0.6
V and the transistor 4 has a base current I_BFlows out
Then, the transistor 4 shifts to the conductive state. In such a transistor circuit 2, the resistance
The resistance value ratio of 6, 10 is a reference of the switching operation.
Threshold voltage V_thAnd the resistance value ratio fluctuates
And the switching characteristics vary,
6 and 10 correspond to the characteristics of the transistor 4 and have the necessary resistance.
A resistor with relatively high precision is used to secure the resistance value ratio.
Required. Therefore, the present invention provides a single transistor
Built-in minimum resistance associated with
In addition to setting arbitrary characteristics for the resistors and resistors at the manufacturing stage,
Structured as a single circuit element consisting of a transistor and a resistor
And have the same terminal configuration as the transistors of the individual components.
In other words, constant setting of transistors and resistors as individual parts and
Transistors, which are individual parts, do not require selection
Within a resistor that can be treated as an individual component like a
It is an object of the present invention to provide a storage transistor. [0014] That is, in the resistor of the present invention,
The storage transistor is on a single transistor (24)
A first resistor (26) made of placed polysilicon;
In the resistor forming a single element body with the second resistor (30)
Storage transistor, wherein the transistor is a single transistor.
Minimum semiconductor substrate (3) on which only transistors can be formed
2) the collector, the first formed on the semiconductor substrate;
The conductive region of the base (34) is selected inside this base
The formed second conductive region is defined as an emitter (36).
The first and second resistances are different from the transistor
When placed on an insulating layer (oxide film 38) covering the surface layer,
In addition, one end of the first resistor is connected to the base by a wiring conductor (electrode).
Pole 42) and connect the second resistor
Wiring conductor between base and emitter of transistor
(Emitter electrode 40) and connected to the semiconductor substrate.
Collector terminal (28C), emitter emitter
A pole (40) at the other end of the first resistor to the base;
A base electrode (44) is provided, and the emitter electrode is
Emitter terminal formed in a container for storing the semiconductor substrate
(28E) is connected by lead bonding,
The base electrode (28) formed on the container is connected to the base electrode.
B) is connected by lead bonding
And According to the transistor with a built-in resistor of the present invention,
Can be associated with a single transistor as a discrete component
The first and second resistors made of polysilicon as the minimum resistance
The second resistor is built in, and the transistor and the resistor
Performance is set at the manufacturing stage, and transistors and resistors are
By configuring as a single circuit element made of anti-
The collector end of a transistor originally as an individual component
Terminal, emitter terminal and base terminal are formed in the container.
Therefore, the terminal configuration similar to that of the individual component transistor
are doing. Therefore, this transistor with a built-in resistor
Set and select constants for individual components such as transistors and resistors
In addition to the need for troublesome operations, the transistor
Similarly, they are handled as individual components,
Used for various circuits such as inverter circuits. [0016] BRIEF DESCRIPTION OF THE DRAWINGS FIG.
This will be described in detail with reference to embodiments. FIGS. 1 to 3 show a resistor built-in transistor according to the present invention.
FIG. 1 shows an embodiment of a transistor, and FIG.
Figure 2 shows an equivalent circuit of a transistor.
FIG. 3 is a cross-sectional view taken along line AA of FIG.
Show. As shown in FIG.
The star 22 is provided with a transistor 24 and
Necessary first and second transistors 24
Of resistors 26 and 30 of a single circuit element,
It is configured as a child body. In other words, this built-in resistor
Transistor 22 has a single transistor 24
The base of the transistor 24 has a resistor 26 connected thereto.
The base terminal 28B is connected to the other end of the resistor 26.
Is formed. Also, a via is placed between the base and the emitter.
Connected to a resistor 30 which constitutes a
The resistance values and the resistance value ratios of 6 and 30 are arbitrarily set.
And the emitter terminal 28E for the emitter, and the collector
Has a collector terminal 28C. The resistor built-in transistor 22 has the structure shown in FIG.
And forming a single transistor as shown in FIG.
A minimum semiconductor substrate 32 is provided for this semiconductor.
The substrate 32 is formed of silicon or the like. And this
In the resistor built-in transistor 22, the semiconductor substrate 32 is
A first conductive layer selectively on the surface layer of the semiconductor substrate 32.
The base 34 of the transistor 24
The base 34 is formed with a selectively installed second
An emitter 36 is formed by the two conductive regions.
That is, the transistor installed in the resistor built-in transistor 22
The star 24 is formed in the same manner as the transistor as an individual component.
Is done. The surface of the semiconductor substrate 32 is
SiO as edge layer_Two An oxide film 38 formed by, for example,
The first and second resistors 2 are provided on the surface of the oxide film 38.
6, 30 are thin films made of Ni-Cr or polysilicon, etc.
It is formed by resistors. Covers the surface of the emitter 36
A contact window is formed in the oxide film 38,
By depositing luminium, gold, etc., the emitter 36
Is formed. This Emi
The emitter electrode 40 corresponds to the emitter terminal 28E,
It is extended as a wiring conductor on the upper surface of one end of the resistor 30,
It is pneumatically connected. Also, covers the surface of the base 34
A contact window is formed in oxide film 38, and an emitter window is formed.
An electrode 42 is formed in the same manner as the data electrode 40. This
The pole 42 is a wiring conductor on the upper surface of one end of each of the resistors 26 and 30.
And one end of each of the resistors 26 and 30 and the base.
Are electrically connected via an electrode 42. Also,
The other end of the resistor 26 has a base connected to the base terminal 28B.
The source electrode 44 is formed. Transistor 24
Semiconductor substrate 32, which is a
The installed emitter electrode 40 and base electrode 44
Consists of pins installed in a container for housing the conductive substrate 32
Collector terminal 28C, emitter terminal 28E, base terminal
28B are electrically connected by lead bonding
It is connected. The resistance built-in transistor 22
Is a single package similar to a transistor that is an individual component
And formed. Therefore, one resistor built-in transformer
The transistor 22 is a transistor 24 and resistors 26 and 30
Circuit element consisting of 3
Because it has a terminal structure, it can
Similarly, it can be treated as one electronic component, and
The electrical characteristics of the transistor 24 and the resistance of the resistors 26 and 30
Arbitrary characteristics can be set for the resistance value and resistance value ratio according to the application.
Therefore, for example, as shown in FIG.
Instead of the transistor circuit 2 in the Eve circuit (FIG. 7)
A transistor 22 with a built-in resistor is installed, and is shown in FIG.
As shown, the transistor in the inverter circuit (FIG. 8)
A transistor 22 with a built-in resistor may be installed in place of the circuit 2.
And has the same terminal structure as a single transistor
Make the necessary connections to the terminals.
In the same way as transistors as individual components.
Yes, very simple. Thus, this built-in resistor
The transistor 22 includes a switching circuit and an inverter circuit.
And so on. In the transistor 22 with a built-in resistor,
Built-in resistors 26 and 30 together with transistor 24
The resistance values of the resistors 26 and 30 are
The threshold voltage can be set arbitrarily in the manufacturing stage of the transistor 22.
V_thArbitrarily set the desired switching characteristics such as
First, since the characteristics can be guaranteed, the input voltage V_iOnly in su
The switching characteristics can be confirmed. In particular, each resistor 26, 3
0 are both formed by thin film resistors,
Formed under the same manufacturing conditions on the
R₁ , R_Two Or relative resistance ratio at the manufacturing stage
Can be set to have the same electrical characteristics
You. The resistors 26 and 30 shown in FIG. 2 are formed in the same width,
Each resistance value R₁ , R_Two Are set to the same resistance value. Obedience
Therefore, in the resistor built-in transistor 22, individual components
A conventional transistor with a resistor added to a transistor
Current amplification factor h of the transistor_FEAnd usually
Resistance value R ₁ , R_Two It is not necessary to adjust the resistance ratio of
Input voltage V_iSwitch only as a parameter
Choosing the switching characteristics to meet the reliability of any circuit conditions
High switching operation can be realized. Obedience
Have been required when using transistors as individual components.
Parameters required to obtain switching characteristics
Measurement, selection of high-precision resistors, setting of resistance value ratio, etc.
Fits within the area where there is no
The circuit is not subject to any restrictions, such as
A switch circuit can be realized. The saturation region of the resistor built-in transistor 22
, The resistance value R of the resistor 26₁ V as a parameter
_i(Input voltage) -I_C(Collector current) is shown in FIG.
This V_i-I_CThe operating curve is the collector of transistor 24.
Emitter-emitter voltage V_CE= 3V (T = 25 ° C)
Show, L₁ Is R₁ = R_Two = 2.2 kΩ, L_Two Is R₁ = R
_Two = 10kΩ, L_Three Is R₁ = R_Two = 47 kΩ
You. As is apparent from FIG.
R₁ = R_Two When fluctuates, V_i-I_COperating curve L₁ ~
L_Three Is approximately the collector current I_CIt has been translated in the axial direction
It becomes Therefore, the resistance value fluctuation for the desired power load
To set an operating point that is not easily affected by_i-I_CMovement
Transistor with built-in resistor 2 so that it becomes a flat area of the curve
2 can be selected. However, V_i-I_COperating curve L₁ ~
L_Three The larger the flat part of the resistance, the greater the resistance R₁ , R_Two Is small
Therefore, since power consumption is large, V_i−
I_CIf the operating point is near the rising edge of the operating curve, the most efficient
Will be better. And the input voltage V_iFluctuations and noise
To prevent malfunction due to power failure,
ON (ON), OFF (OFF) voltage range excluding the pressure range
Is set, but the area is not so narrow.
_i-I_CAs the operation curve is represented by a logarithmic graph,
Covers a wide range of load power with the built-in resistor transistor 22
-Can be. The resistors 26 and 30 are thin film resistors.
Formed by the thin film resistor, the relatively large resistance value error
Causes a difference, but the fluctuation of the operating voltage is small.
Therefore, the resistance value error can be ignored. Therefore,
A resistor built-in transformer consisting of a limited combination of resistors 26 and 30
The supply of the transistor 22 allows most of the power loads to be different.
Applicable to switch circuits. Then, a single transistor 24 is formed.
Transistor 24 and the minimum semiconductor substrate 32
And resistors 26 and 30 are integrated to form a normal single transistor
Since it is integrated into one chip like the
Externally connected to the resistor
There is no need to connect the parts, and the wiring man-hours are simplified.
In addition, it is possible to reduce the size and weight of various devices used.
The mounting cost of the printed circuit board to be mounted
be able to. In the circuit configuration, the base input resistance
Form a resistor 26 in the package of transistor 24
To prevent external surges, static electricity, etc.
Pressure resistance can be improved and the base
To the external noise.
High withstand voltage that is difficult to form with IC,
Large current circuits can be easily realized, and the equipment is simplified
can do. In addition, a single transistor, which is the minimum active element
The transistor 24 should not have any other active elements adjacent to it.
From the emitter-base of the transistor 24 only,
Low stray capacitance between the
The switching speed can be improved.
Excellent characteristics that cannot be achieved can be achieved.
Then, the resistance built-in transistor 22 is compared with the IC.
Then, the transistor 22 with a built-in resistor outputs the reference potential (GN).
D) Since there is no terminal, the transistor 24 is grounded to the emitter.
Use of the base terminal 28B
Can be biased below the emitter potential,
Easily form complementary devices with the same characteristics
Can be achieved. Further, in the transistor 22 with a built-in resistor,
Since the resistors 26 and 30 are formed by thin film resistors, the
No isolation is required and parasitic transistors
Since no data effect occurs, no countermeasure is required. [0029] As described above, according to the present invention,
Then, the following effects can be obtained. (A) Minimal semiconductor capable of forming a single transistor
Substrate from polysilicon with single transistor
By installing first and second resistors, a three-terminal circuit element
Configurable, compatible with transistor characteristics,
The first and second resistors provided with operating characteristics such as
The resistance value and resistance value ratio of the resistor
This is the same as a transistor, which is an individual component.
Built-in in the device, so that the individual
It can be handled as a separate part, and the switch
Widely used for switching circuits and inverter circuits.
From the same terminal configuration as the transistor as an individual component
It is possible to adopt the same mounting form as the transistors of individual parts
it can. (B) An insulating layer is formed on a single transistor
Since the first and second resistors are installed, individual components
A conventional transistor in which a resistor is externally connected to a transistor
The mounting surface of the resistor on the printed circuit board compared to the transistor circuit
Product, and there is no need to externally connect a resistor.
Simplification of wiring man-hours, miniaturization of various devices used,
It is possible to reduce the mounting cost of printed circuit boards.
Reduction can be achieved. (C) The third installed together with the transistor
The first and second resistors are formed by the same manufacturing conditions.
Since it uses a resistor made of polysilicon,
Resistance and highly accurate resistance value or resistance ratio can be set
In addition, applications such as switching circuits and inverter circuits
Can be adapted. (D) The resistance of the first and second resistors is
Constant threshold voltage for switching transistors
Range, and the voltage between the base and emitter terminals
Switch that can control the switching
It can be used as a switching element,
Confirm the switching operation range with only the input voltage
And can be used as a highly accurate inverter circuit.
You. (E) Transistors as individual components
Alone has a base-emitter voltage of, for example, 0.6
Low V and try to realize only with base-emitter voltage
Switching such as the threshold voltage of the switching circuit
Although we cannot guarantee the characteristics,
In the anti-built-in transistor, the addition of the first and second resistors
Therefore, the threshold voltage can be uniquely set, and
Since it can be set to a voltage value of about 1 to several V, measure the value
Switching accuracy is established at the manufacturing stage and
The desired switching characteristics.
Can be guaranteed. That is, the first and second resistors are:
The resistance value and the resistance according to the application corresponding to the characteristics of the transistor
By setting the resistance value ratio, the mutual relationship between the two
Construct basic functional circuits such as switching circuits
To select transistors and resistors or to set constants.
Trouble-free, built-in resistor transformer with arbitrary operating characteristics set
Transistor can be selected as a single circuit element,
Simplified design and reduced manufacturing costs for various devices
Can be made. (F) In addition, the transistor with a built-in resistor
Is a first resistor at the base input of a single transistor,
One independent resistor by installing a second resistor between base and emitter
Because it is configured as a circuit element
Clarify load current range with first and second resistors
Possible and approximate resistance values of the first and second resistors
The load current range can be set stepwise by setting
If you set several load current ranges, most switches
Load current set to a specific range
Switch circuit to apply transistor with built-in resistor in range
The required load current capability can be selected as appropriate for
The flexibility of circuit design can be expanded,
Can be achieved. In other words, a transistor with a built-in resistor
In the transistor saturation region, the first and second
A load current corresponding to the resistance value of the resistor is obtained.
An operating point that is not easily affected by resistance fluctuations with respect to the power load
To set, the collector current operating curve against the input voltage
Select transistor with built-in resistor so that it becomes a flat area
The flat portion has a small value of the first and second resistors.
Power consumption increases, the collector current rises.
If the operating point is near the uphill, the most efficient
You. Also prevents malfunctions due to input voltage fluctuations and noise
Switch, except for a certain voltage range including the operating point.
You only need to set the switching voltage range, and you
Can cover a wide range of load power. So
The first and second resistors are formed of polysilicon.
Is relatively large with a resistor made of polysilicon.
A change in operating voltage caused by a resistance value error
Is small, so the resistance error can be ignored,
Resistance values and resistance values of the first and second resistors in a limited combination
By supplying a transistor with a built-in resistor having a ratio
It can be applied to most switch circuits with different power loads.
You. (G) In addition, the second terminal installed on the base input side
Resistance against external surge, static electricity, etc.
Voltage can be improved and the base can be pulled
Since it is not extracted, compared to the transistor of individual parts
Hardly affected by external noise, and formed by IC
High-voltage, high-current circuits that cannot be easily implemented
In addition, the element configuration can be simplified. (H) Reference potential (ground) terminal such as IC
And the transistor is used with a common emitter.
Restrictions, and the base terminal
Can be biased below the
Comps that can be used in road form and have the same characteristics
It is possible to easily realize a complementary device. (I) The first and second resistors are polysilicon.
No isolation required in IC
And there is no parasitic transistor effect
No countermeasures are required.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a circuit diagram showing an embodiment of a transistor with a built-in resistor according to the present invention. FIG. 2 is a plan view illustrating a configuration of a transistor with a built-in resistor illustrated in FIG. 1; FIG. 3 is a sectional view of the transistor with a built-in resistor shown in FIG. 2 taken along line AA. FIG. 4 is a circuit diagram showing an embodiment of the transistor with a built-in resistor of the present invention shown in FIG. 1; FIG. 5 is a circuit diagram showing an embodiment of the transistor with a built-in resistor of the present invention shown in FIG. 1; FIG. 6 shows V _{i in a} transistor with a built-in resistor according to the present invention.
Is a diagram illustrating an example of a -I _C operating curve. FIG. 7 is a conventional relay drive circuit using individual components. FIG. 8 is a circuit diagram showing a conventional inverter circuit using individual components. [Description of Signs] 22 Transistor with built-in resistor 24 Transistor 26 Resistance (first resistance) 28B Base terminal 28C Collector terminal 28E Emitter terminal 30 Resistance (second resistance) 32 Semiconductor substrate 34 Base 36 Emitter 38 Oxide film (insulating layer) 40 Emitter electrode (wiring conductor) 42 Electrode (wiring conductor) 44 Base electrode

Continuation of the front page (51) Int.Cl. ⁷ Identification symbol FI H01L 29/73 (56) References JP-A-57-10968 (JP, A) JP-A-48-5375 (JP, A) JP-A-50 JP-A-11769 (JP, A) JP-A-52-14384 (JP, A) JP-A-55-158666 (JP, A) JP-A-49-61963 (JP, U) JP-A-49-95839 (JP, U) Japanese Utility Model Showa 52-133651 (JP, U) Japanese Utility Model Showa 52-33268 (JP, U) Japanese Patent Publication No. 40-17409 (JP, B1) Japanese Patent Publication No. 45-3817 (JP, B1) Electronic Materials, 1965 March, pp. 79-84 (58) Fields investigated (Int. Cl. ⁷ , DB name) H01L 21/8222 H01L 21/331 H01L 21/822 H01L 27/04 H01L 27/06 H01L 29/73

Claims (1)

(57) [Claims] A transistor with a built-in resistor that forms a single element body with a first resistor and a second resistor made of polysilicon disposed on a single transistor, wherein the transistor can be formed only by a single transistor A collector with a minimum semiconductor substrate, a first conductive region formed in the semiconductor substrate as a base, a second conductive region selectively formed inside the base as an emitter, A resistor is provided on an insulating layer covering a surface layer of the transistor, one end of the first resistor is connected to the base with a wiring conductor, and the second resistor is connected to a base and an emitter of the transistor. A collector terminal is connected to the semiconductor substrate, an emitter electrode is connected to the emitter, and a base for the base is connected to the other end of the first resistor. A pole is provided, an emitter terminal formed on a container for housing the semiconductor substrate is connected to the emitter electrode by lead bonding, and a base terminal formed on the container is connected to the base electrode by lead bonding. A transistor with a built-in resistor.