JP3147085B2 - High frequency filter and manufacturing method thereof - Google Patents

High frequency filter and manufacturing method thereof

Info

Publication number
JP3147085B2
JP3147085B2 JP16114298A JP16114298A JP3147085B2 JP 3147085 B2 JP3147085 B2 JP 3147085B2 JP 16114298 A JP16114298 A JP 16114298A JP 16114298 A JP16114298 A JP 16114298A JP 3147085 B2 JP3147085 B2 JP 3147085B2
Authority
JP
Japan
Prior art keywords
dielectric
hole
diameter
substrate
frequency filter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP16114298A
Other languages
Japanese (ja)
Other versions
JPH11355005A (en
Inventor
芳嗣 岡田
充 古谷
修 冥加
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP16114298A priority Critical patent/JP3147085B2/en
Priority to US09/187,873 priority patent/US6127907A/en
Priority to EP98121239A priority patent/EP0915528A3/en
Publication of JPH11355005A publication Critical patent/JPH11355005A/en
Application granted granted Critical
Publication of JP3147085B2 publication Critical patent/JP3147085B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、基板に複数の回路
部品を搭載或いは形成して作られる高周波用集積回路ま
たはマイクロ波集積回路(MIC)の構成要素である高
周波濾波器に関する。本発明の高周波濾波器は、通信装
置、レーダ装置、計測装置等に利用することができる。
また、その利用周波数帯は、数GHz以上の高周波用の
回路に適用可能である。
The present invention relates to a high-frequency filter which is a component of a high-frequency integrated circuit or a microwave integrated circuit (MIC) formed by mounting or forming a plurality of circuit components on a substrate. The high frequency filter of the present invention can be used for communication devices, radar devices, measuring devices, and the like.
The frequency band used is applicable to circuits for high frequencies of several GHz or more.

【0002】[0002]

【従来の技術】従来、誘電体基板上に形成された導体線
路近傍に誘電体共振器を配置することにより高周波濾波
器を構成する技術が知られている。例えば、特開平6−
334413号公報には、半導体基板の表面に絶縁膜を
形成し、この絶縁膜の上に導体線路を形成し、更にその
導体線路の近傍に誘電体共振器を接着剤により固着した
MICにおける高周波濾波器が開示されている。
2. Description of the Related Art Conventionally, there has been known a technique for forming a high-frequency filter by arranging a dielectric resonator near a conductor line formed on a dielectric substrate. For example, Japanese Unexamined Patent Publication
Japanese Patent No. 334413 discloses a high-frequency filter in an MIC in which an insulating film is formed on a surface of a semiconductor substrate, a conductor line is formed on the insulating film, and a dielectric resonator is fixed near the conductor line with an adhesive. A vessel is disclosed.

【0003】[0003]

【発明が解決しようとする課題】上記のように導体線路
の近傍に誘電体共振器を取り付ける技術は、基本的に優
れた技術であるが、位置決めを行いながら接着剤で固定
する必要があり、作業工数が大きくなるとともに、特性
にばらつきが生じやすく必ずしも量産には適さない。ま
た、数十GHzの周波数帯で使用するフィルタ回路を設
計すると、基板のサイズはきわめて小型になり、このよ
うに小型の回路ではわずかな寸法誤差が全体の電気的な
特性に大きく影響することになる。
The technique of mounting a dielectric resonator near a conductor line as described above is basically an excellent technique, but it is necessary to fix it with an adhesive while performing positioning. As the number of man-hours increases, the characteristics tend to vary, which is not always suitable for mass production. Also, when designing a filter circuit for use in a frequency band of several tens of GHz, the size of the substrate becomes extremely small. In such a small circuit, a slight dimensional error greatly affects the overall electrical characteristics. Become.

【0004】従って製造後に周波数特性を調整すること
が不可欠になるが、従来技術では、これが経験に頼ると
ころが大きく、均一な製品を作るには適当ではなく、ま
た再現性が悪い等の問題があった。
Therefore, it is indispensable to adjust the frequency characteristic after manufacturing. However, in the prior art, this largely depends on experience, and is not suitable for producing a uniform product, and there are problems such as poor reproducibility. Was.

【0005】本発明の目的は、量産性に優れ、特性のば
らつきが生じにくく、高周波特性が均一でかつ安定な高
周波濾波器を提供することにある。
It is an object of the present invention to provide a high-frequency filter which is excellent in mass productivity, hardly causes variation in characteristics, and has uniform and stable high-frequency characteristics.

【0006】本発明の他の目的は、機械的な工作精度及
び機械的な強度を向上することができ、信頼性が高い高
周波濾波器を提供することにある。
It is another object of the present invention to provide a high-reliability high-frequency filter capable of improving mechanical working accuracy and mechanical strength.

【0007】本発明の更に他の目的は、より高いQ値を
有する高周波濾波器を提供することにある。
It is still another object of the present invention to provide a high frequency filter having a higher Q factor.

【0008】[0008]

【課題を解決するための手段】本発明は、基板に誘電体
共振器を埋め込むことにより、機械的な精度及び機械的
な強度を向上することを特徴とし、さらに、誘電体共振
器の一つ以上の面に接する材料を、ベースとなる誘電体
基板より低誘電率の材料とすることで、高いQ値を得る
ことを特徴とするものである。
SUMMARY OF THE INVENTION The present invention is characterized in that mechanical precision and mechanical strength are improved by embedding a dielectric resonator in a substrate. A high Q value is obtained by using a material having a lower dielectric constant than the base dielectric substrate as a material in contact with the above surface.

【0009】具体的には、本発明の高周波濾波器は、誘
電体基板の表面に導体線路が形成され、その導体線路近
傍に複数の誘電体共振器が埋め込まれ、その誘電体共振
器の下方に空洞が形成されているか、もしくは誘電体共
振器の周囲がベースとなる誘電体基板より低誘電率の材
料で覆われていることを特徴とする。
Specifically, in the high-frequency filter of the present invention, a conductor line is formed on the surface of a dielectric substrate, a plurality of dielectric resonators are embedded near the conductor line, and a lower portion of the dielectric resonator is provided. Or the periphery of the dielectric resonator is covered with a material having a dielectric constant lower than that of the base dielectric substrate.

【0010】本発明によれば、高周波濾波器の構成部品
である誘電体共振器が基板に埋め込まれて一体化してい
るので、機械的な強度及び機械的な精度が向上し、ばら
つきがなく安定した高周波濾波器を構成することができ
る。
According to the present invention, since the dielectric resonator, which is a component of the high-frequency filter, is embedded and integrated in the substrate, the mechanical strength and mechanical accuracy are improved, and there is no variation and stability. The high frequency filter described above can be configured.

【0011】また、誘電体共振器の一つ以上の面に接す
る材料を、ベースとなる誘電体基板より低誘電率の材料
としているので、より高いQ値を有する高周波濾波器を
構成することができる。
Further, since the material in contact with at least one surface of the dielectric resonator is made of a material having a lower dielectric constant than the dielectric substrate as a base, it is possible to constitute a high-frequency filter having a higher Q value. it can.

【0012】本発明における誘電体基板としては、セラ
ミック、特に低温焼結ガラスセラミックを用いるのが好
適である。また、低誘電率材料としては、プラスチッ
ク、特にポリテトラフルオロエチレンを用いるのが好適
である。
As the dielectric substrate in the present invention, it is preferable to use a ceramic, particularly a low-temperature sintered glass ceramic. As the low dielectric constant material, plastic, particularly, polytetrafluoroethylene is preferably used.

【0013】[0013]

【発明の実施の形態】図1は、本発明の高周波濾波器の
第1の実施の形態を示す図であり、(a)はその平面
図、(b)はそのA−A断面図である。図1において、
1は誘電体基板、2は誘電体共振器、3はマイクロスト
リップ線路、4は接地導体、5は空洞である。誘電体基
板1は低温焼結ガラスセラミックにより形成されてい
る。この低温焼結ガラスセラミックは、ホウ珪酸系ガラ
スとアルミナのコンポジットであるが、ホウ珪酸鉛系ガ
ラスとアルミナのコンポジットでも構わない。基板のサ
イズは、従来の基板の厚さをtとした場合、大略10×
4×2tmmである。
FIG. 1 is a view showing a first embodiment of a high-frequency filter according to the present invention. FIG. 1 (a) is a plan view thereof, and FIG. 1 (b) is a sectional view taken along line AA. . In FIG.
1 is a dielectric substrate, 2 is a dielectric resonator, 3 is a microstrip line, 4 is a ground conductor, and 5 is a cavity. The dielectric substrate 1 is formed of a low-temperature sintered glass ceramic. This low-temperature sintered glass ceramic is a composite of borosilicate glass and alumina, but may be a composite of lead borosilicate glass and alumina. The size of the substrate is approximately 10 × when the thickness of the conventional substrate is t.
4 × 2 tmm.

【0014】誘電体基板1の表面に3個の孔が形成され
ており、この孔は図2に示すように、途中で直径が小さ
くなっている。そして表面側の直径の大きい方の孔7に
誘電体共振器2が埋め込まれ、小さい直径の孔8は空洞
5となっている。誘電体共振器2誘電率は誘電体基板1
の誘電率よりも高いが、この空洞5を設けることによ
り、誘電体共振器2の上下の面が誘電体基板1の誘電率
よりも低い空気と接しているで、誘電体共振器2のQ値
をさらに高くすることができ、挿入損失の小さな高周波
濾波器を得ることが可能となる。
Three holes are formed in the surface of the dielectric substrate 1, and these holes have a small diameter in the middle as shown in FIG. The dielectric resonator 2 is buried in the larger diameter hole 7 on the surface side, and the smaller diameter hole 8 becomes the cavity 5. Dielectric resonator 2 Dielectric constant is dielectric substrate 1
By providing the cavity 5, the upper and lower surfaces of the dielectric resonator 2 are in contact with air lower than the dielectric constant of the dielectric substrate 1. The value can be further increased, and a high-frequency filter with small insertion loss can be obtained.

【0015】次に、本発明の高周波濾波器の製造工程を
説明する。まず、複数枚の低温焼結ガラスセラミック・
グリーンシートを準備し、そのうちの1枚に接地導体を
印刷し、また、その所定枚数のグリーンシートに、パン
チング加工により孔をあける。その際、大きい直径の孔
をあけたシートと小さい直径の孔をあけたシートの2種
類を作る。
Next, the manufacturing process of the high frequency filter of the present invention will be described. First, several low-temperature sintered glass ceramics
A green sheet is prepared, a ground conductor is printed on one of the green sheets, and holes are formed in a predetermined number of the green sheets by punching. At that time, two kinds of sheets are made, a sheet with a large diameter hole and a sheet with a small diameter hole.

【0016】次に、この孔をあけたグリーンシートと接
地導体4を印刷したグリーンシートを、両方の孔の中心
線が重なるように、かつ表面側に孔径の大きいシートが
配置され、その下に孔径の小さいシートが配置され、更
にその下に接地導体を印刷したグリーンシートが配置さ
れるように順に積層する。積層後、孔径の大きい方の孔
7に、円柱形状に加工された誘電体共振器2を嵌め込
み、一括焼成する。焼成により低温焼結ガラスセラミッ
ク基板が収縮し誘電体共振器2が直径の大きい方の孔7
に固着されて埋め込まれた状態となり、誘電体共振器2
の下方には直径の小さい方の孔8により空洞5が形成さ
れる。
Next, the green sheet having the holes formed thereon and the green sheet on which the ground conductor 4 is printed are placed on a surface having a large hole diameter so that the center lines of both holes are overlapped, and a sheet having a large diameter is disposed below the green sheet. The sheets are stacked in order such that a sheet having a small hole diameter is arranged, and further a green sheet on which a ground conductor is printed is arranged therebelow. After lamination, the dielectric resonator 2 processed into a cylindrical shape is fitted into the hole 7 having the larger hole diameter, and is fired at a time. By firing, the low-temperature sintered glass-ceramic substrate shrinks, and the dielectric resonator 2 has the larger diameter hole 7.
And is embedded in the dielectric resonator 2.
A cavity 5 is formed by a hole 8 having a smaller diameter.

【0017】基板1の焼成温度は、誘電体共振器2に影
響を与えないよう、誘電体共振器2の焼成温度より低い
温度が選ばれる。本実施例では、誘電体共振器の焼成温
度が1600℃程度に対し、低温焼結ガラスセラミック
基板の焼成温度は900℃程度である。その後、印刷マ
スクを使用して、金導体ペーストを基板表面の所定の位
置に印刷し、焼き付けを行ってマイクロストリップ線路
3を形成する。
The firing temperature of the substrate 1 is selected to be lower than the firing temperature of the dielectric resonator 2 so as not to affect the dielectric resonator 2. In this embodiment, the firing temperature of the low-temperature sintered glass ceramic substrate is about 900 ° C. while the firing temperature of the dielectric resonator is about 1600 ° C. After that, using a print mask, the gold conductor paste is printed at a predetermined position on the substrate surface, and baked to form the microstrip line 3.

【0018】図3は、本発明の高周波濾波器の第2の実
施の形態を示す図であり、(a)はその平面図、(b)
はそのA−A断面図である。図3において図1と同じ番
号のものは同じ材料を表している。この実施例おいて
も、基板1のサイズは、大略10×4×2tmmであ
り、基板1は、第1の実施例と同じく低温焼結ガラスセ
ラミックにより形成された多層基板であって、表面に3
個の孔が形成されている。これらの孔は、グリーンシー
トに、パンチング加工で穴開けした後、接地導体を印刷
したグリーンシートと積層し、焼成することにより形成
される。
FIGS. 3A and 3B show a high-frequency filter according to a second embodiment of the present invention, wherein FIG. 3A is a plan view thereof, and FIG.
Is a sectional view taken along the line A-A. In FIG. 3, the same numbers as those in FIG. 1 indicate the same materials. Also in this embodiment, the size of the substrate 1 is approximately 10 × 4 × 2 tmm, and the substrate 1 is a multi-layer substrate formed of a low-temperature sintered glass ceramic similarly to the first embodiment, and has a surface. 3
Individual holes are formed. These holes are formed by punching a hole in the green sheet, laminating the green sheet on which the ground conductor is printed, and firing.

【0019】第2の実施の形態は、この孔に、プラスチ
ック材料、例えばポリテトラフルオロエチレンのような
低誘電率材料6で、上面を除いて被覆された誘電体共振
器2が挿入されており、この誘電体共振器2は孔の内壁
に塗布された接着剤により低誘電率材料6を介して固定
されている。更にこの誘電体共振器2の近傍にマイクロ
ストリップ線路3を形成する。
In the second embodiment, the dielectric resonator 2 covered with a plastic material, for example, a low dielectric constant material 6 such as polytetrafluoroethylene, except for the upper surface, is inserted into the hole. The dielectric resonator 2 is fixed via a low dielectric constant material 6 by an adhesive applied to the inner wall of the hole. Further, a microstrip line 3 is formed near the dielectric resonator 2.

【0020】誘電体共振器2を被覆する低誘電率材料6
として、ポリテトラフルオロエチレン以外のテフロン系
材料、ベンゾシクロブテン、ポリイミド系材料、エポキ
シ系材料等を用いることもできる。被覆の厚さは、0.
5〜1mm程度が良く、これにより高いQ値を得ること
が可能となる。
Low dielectric constant material 6 covering dielectric resonator 2
For example, a Teflon-based material other than polytetrafluoroethylene, benzocyclobutene, a polyimide-based material, an epoxy-based material, or the like can be used. The thickness of the coating is 0.
The thickness is preferably about 5 to 1 mm, whereby a high Q value can be obtained.

【0021】[0021]

【発明の効果】本発明によれば、基板と誘電体共振器を
一体化して形成し、かつ誘電体の下方、もしくは周囲
に、基板材料より低誘電率の材料からなる部分を設けて
いるので、高精度、高Q値の高周波濾波器を得ることが
可能となる。
According to the present invention, the substrate and the dielectric resonator are integrally formed, and a portion made of a material having a lower dielectric constant than the substrate material is provided below or around the dielectric. , A high-precision, high-Q value high-frequency filter can be obtained.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明高周波濾波器の第1の実施の形態を示す
図である。(a)はその平面図、(b)はそのA−A断
面図である。
FIG. 1 is a diagram showing a high-frequency filter according to a first embodiment of the present invention. (A) is the top view, (b) is the AA sectional drawing.

【図2】図1の高周波濾波器の基板に形成された孔の形
状を説明する図である。
FIG. 2 is a diagram illustrating the shape of a hole formed in a substrate of the high-frequency filter of FIG.

【図3】本発明高周波濾波器の第2の実施の形態を示す
図である。(a)はその平面図、(b)はそのB−B断
面図である。
FIG. 3 is a diagram showing a high-frequency filter according to a second embodiment of the present invention. (A) is the top view, (b) is the BB sectional drawing.

【符号の説明】[Explanation of symbols]

1 誘電体基板 2 誘電体共振器 3 マイクロストリップ線路 4 接地導体 5 空洞 6 低誘電率材料 7 直径の大きい方の孔 8 直径の小さい方の孔 DESCRIPTION OF SYMBOLS 1 Dielectric substrate 2 Dielectric resonator 3 Microstrip line 4 Ground conductor 5 Cavity 6 Low dielectric constant material 7 Large diameter hole 8 Small diameter hole

───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平7−58505(JP,A) 特開 平6−334413(JP,A) 特開 平11−145577(JP,A) (58)調査した分野(Int.Cl.7,DB名) H01P 1/20 H01P 7/10 H01P 11/00 ────────────────────────────────────────────────── ─── Continuation of front page (56) References JP-A-7-58505 (JP, A) JP-A-6-334413 (JP, A) JP-A-11-145577 (JP, A) (58) Field (Int.Cl. 7 , DB name) H01P 1/20 H01P 7/10 H01P 11/00

Claims (5)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 誘電体基板の表面に導体線路が形成さ
れ、該導体線路近傍に少なくとも一つの誘電体共振器が
配置された高周波濾波器において、 前記誘電体共振器は、前記誘電体基板にあけられた孔
に、その上面を除く周囲が埋め込まれているとともに、
前記誘電体共振器の下面と前記誘電体基板の間には空洞
が形成されていることを特徴とする高周波濾波器。
1. A high-frequency filter in which a conductor line is formed on a surface of a dielectric substrate and at least one dielectric resonator is arranged near the conductor line, wherein the dielectric resonator is provided on the dielectric substrate. The perimeter except the top surface is embedded in the drilled hole ,
A cavity is provided between the lower surface of the dielectric resonator and the dielectric substrate.
A high-frequency filter characterized by having a pattern formed thereon .
【請求項2】 誘電体基板の表面に導体線路が形成さ
れ、該導体線路近傍に少なくとも一つの誘電体共振器が
配置された高周波濾波器において、 前記誘電体共振器は、前記誘電体基板にあけられた孔
に、その上面を除く周囲が前記誘電体基板よりも低誘電
率の誘電体材料を介在して埋め込まれていることを特徴
とする 高周波濾波器。
2. A conductor line is formed on a surface of a dielectric substrate.
And at least one dielectric resonator is provided near the conductor line.
In the arranged high-frequency filter, the dielectric resonator has a hole formed in the dielectric substrate.
In addition, the periphery except the upper surface has a lower dielectric constant than the dielectric substrate.
Characteristically embedded with a dielectric material interposed
And high frequency filter.
【請求項3】 前記誘電体材料は、プラスチックである
ことを特徴とする請求項2記載の高周波濾波器。
3. The dielectric material is plastic.
3. The high frequency filter according to claim 2, wherein:
【請求項4】 複数枚の低温焼結ガラスセラミック・グ
リーンシートのうちの所定枚数のグリーンシートに、パ
ンチング加工により第1の直径の孔をあけ、他の所定枚
数のグリーンシートに、パンチング加工により第1の直
径よりも小さい第2の直径の孔をあける工程と、 前記孔をあけた複数のグリーンシートを、表面側から順
に前記第1の直径の孔と前記第2の直径の孔が重なって
段付きの孔となるように積層する工程と、 前記積層されたグリーンシートの前記第1の直径の孔の
中に、円柱形状に加工された誘電体共振器を嵌め込む工
程と、 前記誘電体共振器が嵌め込まれた前記積層グリーンシー
トを焼成して、前記誘電体共振器を前記第1の直径の孔
の中に固着する工程とを含むことを特徴とする高周波濾
波器の製造方法。
4. A plurality of low-temperature sintered glass ceramic groups.
A predetermined number of green sheets among the lean sheets
Drill a hole of the first diameter by punching
Number of green sheets by punching
Forming a hole having a second diameter smaller than the diameter of the green sheet;
The hole of the first diameter and the hole of the second diameter overlap
Laminating so as to form a stepped hole, and forming the first diameter hole of the laminated green sheet.
A dielectric resonator machined into a cylindrical shape is inserted into it.
And the laminated green sheet into which the dielectric resonator is fitted.
Baking the dielectric resonator into holes of the first diameter.
And a step of fixing the filter in a filter.
Method of manufacturing a corrugator.
【請求項5】 複数枚の低温焼結ガラスセラミック・グ
リーンシートのうちの所定枚数のグリーンシートに、パ
ンチング加工により所定の直径の孔をあける工程と、 前記複数のグリーンシートを、表面側に前記所定の直径
の孔が形成されるように積層して焼成することにより一
枚のガラスセラミック基板とする工程と、 前記焼成したガラスセラミック基板に形成された前記所
定の直径の孔の中に、円柱形状に加工された誘電体共振
器をその誘電率が前記ガラスセラミック基板の誘電率よ
りも低い低誘電率材料を介在させて接着固定する工程と
を含むことを特徴とする高周波濾波器の製造方法。
5. A plurality of low-temperature sintered glass ceramic groups.
A predetermined number of green sheets among the lean sheets
Punching a hole of a predetermined diameter by unching, and forming the plurality of green sheets on the surface side by the predetermined diameter.
By firing and laminating so that holes are formed,
Sheets of a step of a glass ceramic substrate, the baking and the plants which are formed on a glass ceramic substrate
Dielectric resonance processed into a cylindrical shape in a fixed diameter hole
The dielectric constant of the glass ceramic substrate is higher than that of the glass ceramic substrate.
Bonding and fixing with low dielectric constant material
A method for manufacturing a high-frequency filter, comprising:
JP16114298A 1997-11-07 1998-06-09 High frequency filter and manufacturing method thereof Expired - Fee Related JP3147085B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP16114298A JP3147085B2 (en) 1998-06-09 1998-06-09 High frequency filter and manufacturing method thereof
US09/187,873 US6127907A (en) 1997-11-07 1998-11-06 High frequency filter and frequency characteristics regulation method therefor
EP98121239A EP0915528A3 (en) 1997-11-07 1998-11-06 High frequency filter and frequency characteristics regulation method therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16114298A JP3147085B2 (en) 1998-06-09 1998-06-09 High frequency filter and manufacturing method thereof

Publications (2)

Publication Number Publication Date
JPH11355005A JPH11355005A (en) 1999-12-24
JP3147085B2 true JP3147085B2 (en) 2001-03-19

Family

ID=15729398

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16114298A Expired - Fee Related JP3147085B2 (en) 1997-11-07 1998-06-09 High frequency filter and manufacturing method thereof

Country Status (1)

Country Link
JP (1) JP3147085B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006238027A (en) * 2005-02-24 2006-09-07 Tdk Corp Dielectric filter and its manufacturing method
JP6812670B2 (en) 2016-06-17 2021-01-13 Tdk株式会社 Dielectric filter

Also Published As

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JPH11355005A (en) 1999-12-24

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