JP3139462B2 - Manufacturing method of organic thin film EL device - Google Patents
Manufacturing method of organic thin film EL deviceInfo
- Publication number
- JP3139462B2 JP3139462B2 JP10202574A JP20257498A JP3139462B2 JP 3139462 B2 JP3139462 B2 JP 3139462B2 JP 10202574 A JP10202574 A JP 10202574A JP 20257498 A JP20257498 A JP 20257498A JP 3139462 B2 JP3139462 B2 JP 3139462B2
- Authority
- JP
- Japan
- Prior art keywords
- sealing
- pressure
- ultraviolet
- adhesive
- insulating substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010409 thin film Substances 0.000 title claims description 31
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 238000007789 sealing Methods 0.000 claims description 69
- 239000000853 adhesive Substances 0.000 claims description 67
- 230000001070 adhesive effect Effects 0.000 claims description 67
- 239000000758 substrate Substances 0.000 claims description 46
- 238000005401 electroluminescence Methods 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 22
- 229920005989 resin Polymers 0.000 claims description 16
- 239000011347 resin Substances 0.000 claims description 16
- 125000006850 spacer group Chemical group 0.000 claims description 13
- 239000012298 atmosphere Substances 0.000 claims description 9
- 239000003822 epoxy resin Substances 0.000 claims description 6
- 229920000647 polyepoxide Polymers 0.000 claims description 6
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 2
- 239000004925 Acrylic resin Substances 0.000 claims 1
- 229920000178 Acrylic resin Polymers 0.000 claims 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 1
- 239000011737 fluorine Substances 0.000 claims 1
- 229910052731 fluorine Inorganic materials 0.000 claims 1
- 229920002050 silicone resin Polymers 0.000 claims 1
- 238000001723 curing Methods 0.000 description 31
- 239000011521 glass Substances 0.000 description 12
- 239000005394 sealing glass Substances 0.000 description 12
- 239000010410 layer Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910001873 dinitrogen Inorganic materials 0.000 description 4
- 150000002894 organic compounds Chemical class 0.000 description 4
- 239000012945 sealing adhesive Substances 0.000 description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 238000003848 UV Light-Curing Methods 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000012663 cationic photopolymerization Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000003999 initiator Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- -1 tris (8-quinolinol) aluminum Chemical compound 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8428—Vertical spacers, e.g. arranged between the sealing arrangement and the OLED
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、有機薄膜エレクト
ルミネッセンス（ＥＬ）デバイスの製造方法に関し、特
に、有機薄膜エレクトロルミネッセンス（ＥＬ）デバイ
スの透明絶縁基板と封止キャップの接着方法に関する。The present invention relates to a method for manufacturing an organic thin-film electroluminescence (EL) device, and more particularly to a method for bonding a transparent insulating substrate and a sealing cap of an organic thin-film electroluminescence (EL) device.
【０００２】[0002]
【従来の技術】従来、有機薄膜ＥＬデバイスにおいて、
透明絶縁基板に封止キャップを取り付けるには、以下の
手順により行っていた。 （１）封止キャップに樹脂接着剤を塗布する。 （２）透明絶縁基板と封止キャップを、窒素ガスを流し
た、ほぼ大気圧のグローブボックスの中で、治具を用い
て位置決め、貼り合わせ、加圧をする。 （３）グローブボックスから取り出し、治具で固定した
状態で接着剤を硬化させる。 （４）接着剤が硬化したら封止したキャップと基板を治
具から取り外す。2. Description of the Related Art Conventionally, in an organic thin film EL device,
The following procedure was used to attach the sealing cap to the transparent insulating substrate. (1) A resin adhesive is applied to the sealing cap. (2) The transparent insulating substrate and the sealing cap are positioned, bonded, and pressed by using a jig in a nearly atmospheric pressure glove box in which a nitrogen gas is supplied. (3) Take out from the glove box and cure the adhesive while fixing it with a jig. (4) When the adhesive is cured, the sealed cap and substrate are removed from the jig.
【０００３】上記の方法で、透明絶縁基板と封止キャッ
プを接合する場合、封止内部空間の圧力が増加し、樹脂
が接合位置から外部に流れ出るという問題があった。ま
た、接合の圧力が高いと、透明絶縁基板と封止キャップ
の隙間が減少または不均一になり、封止内部の気密性が
損なわれたり、透明絶縁基板と封止キャップの平行度が
失われるという問題があった。When the transparent insulating substrate and the sealing cap are joined by the above method, there is a problem that the pressure in the sealing internal space increases and the resin flows out of the joining position to the outside. In addition, when the bonding pressure is high, the gap between the transparent insulating substrate and the sealing cap is reduced or uneven, and the airtightness inside the sealing is impaired, or the parallelism between the transparent insulating substrate and the sealing cap is lost. There was a problem.
【０００４】デバイス形態は異なるが、半導体チップを
キャップで気密封止するパッケージ型半導体装置に関し
て、特開平４−４８７５５号公報には、減圧下で熱硬化
性樹脂を溶融させ、キャップとステムを仮付けし、その
後、キャップに作用する圧力（または大気圧）によりキ
ャップをステムに押し付け熱硬化性樹脂を溶融させ、キ
ャップとステムを本付けする製造方法が紹介されてい
る。この方法によれば、大気圧を利用してキャップ封止
を行うことにより、工数の削減を図ることができる。Japanese Patent Application Laid-Open No. 4-48755 discloses a package-type semiconductor device in which a semiconductor chip is hermetically sealed with a cap, although the device form is different. Then, a cap is pressed against the stem by a pressure (or atmospheric pressure) acting on the cap to melt the thermosetting resin, and the cap and the stem are permanently attached. According to this method, man-hours can be reduced by performing cap sealing using atmospheric pressure.
【０００５】また、同様に、デバイス形態の異なる固体
撮像装置に関して、特開平３−１７９７６５号公報に
は、封止用接着剤としてエポキシ樹脂と光カチオン重合
開始剤からなる紫外線硬化接着剤を使う技術が記載され
ているが、この技術は封止の際の加熱によって、内部の
空気が膨張して気密封止が困難になるという問題を解決
するためのものである。Similarly, regarding a solid-state imaging device having a different device form, Japanese Patent Application Laid-Open No. 3-179765 discloses a technique using an ultraviolet-curing adhesive comprising an epoxy resin and a cationic photopolymerization initiator as a sealing adhesive. However, this technique is intended to solve the problem that the air inside expands due to heating at the time of sealing, making hermetic sealing difficult.
【０００６】[0006]
【発明が解決しようとする課題】しかし、上述した特開
平４−４８７５５号公報記載の方法を有機薄膜ＥＬデバ
イスに応用した場合、有機薄膜ＥＬデバイスに使用して
いる有機材料のガラス転移温度が１００℃程度であるの
に対し、熱硬化性樹脂を硬化するためは、一般に１００
℃以上の温度を数時間加える必要があるため、有機薄膜
ＥＬデバイス発光特性の劣化を引き起こすという問題が
ある。However, when the method described in Japanese Patent Application Laid-Open No. 4-48755 is applied to an organic thin film EL device, the organic material used in the organic thin film EL device has a glass transition temperature of 100. Although the temperature is about 100 ° C., it is generally 100 ° C. to cure the thermosetting resin.
Since it is necessary to apply a temperature of not less than ° C. for several hours, there is a problem that light emission characteristics of the organic thin film EL device are deteriorated.
【０００７】また、封止用の樹脂として紫外線硬化型の
樹脂を用いたとしても、透明絶縁基板と紫外線硬化接着
剤を塗布した封止キャップとを貼り合わせた後、紫外線
を照射し、紫外線硬化接着剤を硬化させ接着する際、上
述した公報には、減圧、加圧の圧力条件が明記されてい
ないため、樹脂が接合位置から外部に流れ出るという問
題や、透明絶縁基板と封止キャップの隙間が不均一にな
り、封止内部の気密性が損なわれたり、透明絶縁基板と
封止キャップの平行度が失われるという問題を解決する
ことはできない。[0007] Even when an ultraviolet-curing resin is used as the sealing resin, the transparent insulating substrate and the sealing cap coated with an ultraviolet-curing adhesive are bonded together, and then irradiated with ultraviolet light to be cured by ultraviolet. When the adhesive is cured and bonded, the above-mentioned publication does not specify the pressure conditions of decompression and pressurization, so that the resin flows out from the bonding position to the outside and the gap between the transparent insulating substrate and the sealing cap. However, it is not possible to solve the problem that the airtightness inside the sealing is impaired and the parallelism between the transparent insulating substrate and the sealing cap is lost.
【０００８】本発明は、上記問題点に鑑みてなされたも
のであって、その主たる目的は、封止キャップと透明絶
縁基板を貼り合わせるに際して、塗布した接着剤の塗布
パターンが内側あるいは外側に広がることを制御でき、
接着剤の厚さを一定にすることができる有機薄膜ＥＬデ
バイスの製造方法を提供することにある。The present invention has been made in view of the above problems, and a main object of the present invention is to apply a coating pattern of an applied adhesive to the inside or outside when bonding a sealing cap and a transparent insulating substrate. Can control
An object of the present invention is to provide a method of manufacturing an organic thin film EL device that can make the thickness of an adhesive constant.
【０００９】[0009]
【課題を解決するための手段】本発明の有機薄膜ＥＬデ
バイスの製造方法は、有機薄膜ＥＬデバイスが形成され
た基板と封止用キャップとを接着剤を用いて封止する有
機薄膜ＥＬデバイスの製造方法において、（ａ）前記基
板または前記封止用キャップに接着剤を塗布する工程
と、（ｂ）前記基板と前記封止用キャップとを気密室内
に導入し、所定の圧力の窒素雰囲気中で減圧する工程
と、（ｃ）前記減圧工程後、減圧雰囲気中で、前記透明
絶縁基板と前記封止用キャップとを位置合わせし、前記
紫外線硬化接着剤を硬化させることなく、仮止めする工
程と、（ｄ）前記仮止め工程後、前記紫外線硬化接着剤
を硬化させることなく、前記気密室内を前記（ｂ）の工
程の圧力よりも高い、所定の圧力に保持することによっ
て、前記透明絶縁基板と前記封止用キャップとを圧着さ
せる工程と、（ｅ）前記接着剤を硬化させる工程と、を
含むものであり、エポキシ樹脂を主成分とする樹脂から
なる前記紫外線硬化接着剤に、エポキシ樹脂等の前記紫
外線硬化接着剤との塗れ性が良好な樹脂を主成分とし、
直径と高さが略等しい円柱形状のギャップスペーサが混
合され、該ギャップスペーサにより前記紫外線硬化接着
剤の封止後の接着厚が定められる構成とすることもでき
る。According to the present invention, there is provided a method of manufacturing an organic thin film EL device, comprising the steps of: sealing a substrate on which the organic thin film EL device is formed and a sealing cap with an adhesive; In the manufacturing method, (a) a step of applying an adhesive to the substrate or the cap for sealing, and (b) introducing the substrate and the cap for sealing into a hermetic chamber, and in a nitrogen atmosphere at a predetermined pressure. in a step of pressure reduction, (c) after the pressure reducing step, in a reduced pressure atmosphere, aligning with said sealing cap and said transparent insulating substrate, wherein
Temporarily fixing the ultraviolet curing adhesive without curing , and (d) after the temporary fixing step, the ultraviolet curing adhesive
(C) pressing the transparent insulating substrate and the cap for sealing by holding the airtight chamber at a predetermined pressure higher than the pressure in the step (b) without curing the airtight chamber; from) and curing the adhesive, those containing a resin composed mainly of an epoxy resin
The ultraviolet-curable adhesive becomes an epoxy resin or the like.
Wettability with external curing adhesive as a main component a good resin,
It is also possible to adopt a configuration in which cylindrical gap spacers having substantially the same diameter and height are mixed, and the gap spacer determines the bonding thickness of the ultraviolet curing adhesive after sealing.
【００１０】このように、封止の際に、封止内部空間の
体積の減少に伴う圧力の増加に見合った分、封止外部空
間の圧力を増加させることによって、封止領域内外の圧
力差を小さくすることができ、従って、封止用接着剤が
圧力の低い方に広がることを抑制することができる。ま
た、封止用接着剤に、所定の形状の樹脂からなるギャッ
プスペ−サを混入させることにより、封止用接着剤の厚
さは封止領域全体にわたって、樹脂の大きさに等しくす
ることができる。As described above, at the time of sealing, the pressure difference between the inside and outside of the sealing region is increased by increasing the pressure in the sealing outer space by the amount corresponding to the increase in pressure accompanying the decrease in the volume of the sealing inner space. Can be reduced, and therefore, the sealing adhesive can be suppressed from spreading to the lower pressure side. In addition, by mixing a gap spacer made of a resin having a predetermined shape into the sealing adhesive, the thickness of the sealing adhesive can be made equal to the size of the resin over the entire sealing region. it can.
【００１１】また、本発明の有機薄膜ＥＬデバイスの製
造方法は、前記（ｂ）の工程の所定の圧力をＰ１、前記
（ｄ）の工程の所定の圧力をＰ２、前記（ｃ）の工程の
前記基板と前記封止用キャップとを仮止めした後の封止
内部空間の体積をＶ１、前記（ｄ）の工程の前記基板と
前記封止用キャップとを圧着させた後の封止内部空間の
体積をＶ２としたとき、予め定められたＶ１とＶ２との
関係により、Ｐ２がデバイスの使用条件下での圧力に略
等しくなるように、Ｐ１が定められることが好ましい。In the method for manufacturing an organic thin film EL device according to the present invention, the predetermined pressure in the step (b) is P1, the predetermined pressure in the step (d) is P2, and the pressure in the step (c) is The volume of the sealing internal space after temporarily fixing the substrate and the sealing cap is V1, and the sealing internal space after the substrate and the sealing cap in the step (d) are pressure-bonded. When the volume of V1 is V2 , the predetermined V1 and V2
Due to the relationship, P2 is approximately equal to the pressure under the operating conditions of the device.
Preferably , P1 is determined to be equal .
【００１２】[0012]
【発明の実施の形態】本発明に係る有機薄膜ＥＬデバイ
スの製造方法は、その好ましい一実施の形態において、
有機薄膜ＥＬデバイスが形成された透明絶縁基板（図１
の１）と封止用キャップ（図１の７）とを、略円柱形状
のギャップスペーサ（図１の５）を混入した紫外線硬化
接着剤（図１の６）を用いて封止する有機薄膜エレクト
ロルミネッセンスデバイスの製造方法において、透明絶
縁基板または前記封止用キャップに紫外線硬化接着剤を
塗布する工程と、気密室（図１の８）内に導入して所定
の圧力に減圧する工程と、透明絶縁基板と封止用キャッ
プとを位置合わせし、仮止めする工程と、所定の圧力に
高めることによって、紫外線硬化接着剤がギャップスペ
ーサで規定される厚さになるまで、透明絶縁基板と封止
用キャップとを圧着させる工程と、紫外線硬化接着剤に
紫外線を照射して硬化させる工程と、を含む。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS In a preferred embodiment of the method for manufacturing an organic thin film EL device according to the present invention,
A transparent insulating substrate on which an organic thin film EL device is formed (FIG. 1)
(1) An organic thin film for sealing the sealing cap (7 in FIG. 1) using an ultraviolet curing adhesive (6 in FIG. 1) mixed with a substantially cylindrical gap spacer (5 in FIG. 1) In the method for manufacturing an electroluminescent device, a step of applying an ultraviolet curable adhesive to a transparent insulating substrate or the sealing cap, a step of introducing the adhesive into an airtight chamber (8 in FIG. 1) and reducing the pressure to a predetermined pressure; A step of aligning the transparent insulating substrate and the sealing cap and temporarily fixing the same, and increasing the pressure to a predetermined value until the ultraviolet-curing adhesive is sealed with the transparent insulating substrate until the thickness is defined by the gap spacer. A step of pressing the stop cap and a step of irradiating the ultraviolet curing adhesive with ultraviolet rays to cure the adhesive.
【００１３】[0013]
【実施例】上記した本発明の実施の形態についてさらに
詳細に説明すべく、本発明の実施例について図面を参照
して以下に説明する。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a block diagram showing an embodiment of the present invention;
【００１４】［実施例１］本発明の第１の実施例につい
て、図面を参照して説明する。図１は、本発明の第１の
実施例の構造を説明するための断面図である。また、図
２は、第１の実施例に係る有機薄膜ＥＬデバイスの製造
方法を模式的に説明するための図であり、図２（ａ）、
（ｂ）及び（ｅ）は工程断面図、（ｃ）は接着剤を塗布
した封止ガラスの平面図、（ｄ）は気密室の接続図であ
る。また、図３は、封止に際し、紫外線硬化樹脂が広が
る様子を模式的に説明するための断面図である。[First Embodiment] A first embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a sectional view for explaining the structure of the first embodiment of the present invention. FIG. 2 is a diagram schematically illustrating a method of manufacturing the organic thin film EL device according to the first embodiment.
(B) and (e) are sectional views of the process, (c) is a plan view of a sealing glass coated with an adhesive, and (d) is a connection diagram of an airtight chamber. FIG. 3 is a cross-sectional view for schematically explaining how the ultraviolet curable resin spreads during sealing.
【００１５】まず、図１を参照して、有機薄膜ＥＬデバ
イスの構造について説明する。有機薄膜ＥＬデバイス
は、透明な電極配線２と有機化合物薄膜３と導電性金属
からなる陰極４が形成された透明絶縁基板１に、ギャッ
プスペーサ５が混合され紫外線照射によって硬化する紫
外線硬化接着剤６を用いて、封止キャップ７が接着され
た構造をしている。ここで、有機化合物薄膜３は、単層
または積層構造をなし、ＥＬ発光現象を示し、その成膜
方法には、真空蒸着法やスピンコート法を用いられる。
また、陰極４の材料としては、例えば、マグネシウム：
銀やマグネシウム：インジウムなど仕事関数の小さい金
属合金が用いられる。First, the structure of the organic thin film EL device will be described with reference to FIG. The organic thin film EL device is composed of a transparent insulating substrate 1 on which a transparent electrode wiring 2, an organic compound thin film 3, and a cathode 4 made of a conductive metal are formed. Is used to form a structure in which the sealing cap 7 is bonded. Here, the organic compound thin film 3 has a single-layer or laminated structure and exhibits an EL luminescence phenomenon, and a vacuum deposition method or a spin coating method is used as a film forming method.
The material of the cathode 4 is, for example, magnesium:
Silver or magnesium: A metal alloy having a small work function such as indium is used.
【００１６】次に、本発明の第１の実施例に係る有機薄
膜ＥＬデバイスの製造方法について説明する。まず、図
２（ａ）に示すように、厚さ１．１ｍｍのガラス基板１
ａにインジウム・錫酸化物（ＩＴＯ）を膜厚２０ｎｍ程
度スパッタし、公知のリソグラフィー技術とウェットエ
ッチングにより透明な電極配線２を形成する。Next, a method of manufacturing an organic thin film EL device according to a first embodiment of the present invention will be described. First, as shown in FIG. 2A, a glass substrate 1 having a thickness of 1.1 mm was used.
a is sputtered with indium tin oxide (ITO) to a thickness of about 20 nm, and a transparent electrode wiring 2 is formed by a known lithography technique and wet etching.
【００１７】次に、図２（ｂ）に示すように、真空蒸着
により有機化合物薄膜３と陰極４を堆積する。正孔輸送
層３ａとしては、ジアミン誘導体（ＴＰＤ）を膜厚５０
ｎｍ程度、発光層および電子輸送層３ｂとしては、トリ
ス（８−キノリノ―ル）アルミニウム（Ａｌｑ３）を膜
厚５０ｎｍ程度蒸着する。そして、マグネシウムとイン
ジウムを共蒸着し、原子比１０：１の合金からなる膜厚
２００ｎｍ程度の陰極４を形成する。Next, as shown in FIG. 2B, an organic compound thin film 3 and a cathode 4 are deposited by vacuum evaporation. As the hole transport layer 3a, a diamine derivative (TPD) having a film thickness of 50
As a light emitting layer and an electron transporting layer 3b, tris (8-quinolinol) aluminum (Alq3) is deposited to a thickness of about 50 nm. Then, magnesium and indium are co-evaporated to form a cathode 4 having a thickness of about 200 nm and made of an alloy having an atomic ratio of 10: 1.
【００１８】そして、図２（ｃ）に示すように、例え
ば、１２０ｍｍ×１２０ｍｍ×１ｍｍ程度の大きさの封
止ガラス７ａに、波長３５０ｎｍの積算光量が６０００
ｍＪ／ｃｍ2程度で硬化するエポキシを主成分とする樹
脂からなる紫外線硬化接着剤５をディスペンサーによっ
て塗布する。紫外線硬化接着剤５の粘度は、例えば室温
にて１２０Ｐａ・ｓで、直径５０μｍ、高さ５０μｍの
円柱のエポキシ樹脂からなるギャップスペーサ５を混合
しており、塗布断面は半径０．４ｍｍ程度の略半円形状
である。なお、本実施例では、紫外線硬化接着剤５は封
止ガラス７ａに塗布しているが、ガラス基板１ａ側また
は双方に塗布してもよい。Then, as shown in FIG. 2 (c), for example, an integrated light amount of 350 nm is applied to the sealing glass 7a having a size of about 120 mm × 120 mm × 1 mm.
An ultraviolet-curing adhesive 5 made of a resin containing epoxy as a main component that cures at about mJ / cm 2 is applied by a dispenser. The viscosity of the ultraviolet-curing adhesive 5 is, for example, 120 Pa · s at room temperature, and is mixed with a gap spacer 5 made of a cylindrical epoxy resin having a diameter of 50 μm and a height of 50 μm. It has a semicircular shape. In this embodiment, the ultraviolet curing adhesive 5 is applied to the sealing glass 7a, but may be applied to the glass substrate 1a or both.
【００１９】そして、図２（ｄ）に示すように、ガラス
基板１ａと封止ガラス７ａを気密室８内に搬入して、一
旦、０．６７Ｐａ（＝０．００５ｔｏｒｒ）程度まで真
空引きした後、窒素ガスを導入し、１．２７Ｅ４Ｐａ
（＝０．１２５ａｔｍ）の減圧雰囲気にする。ここで、
圧力を０．１２５ａｔｍ（＝５０μｍ／０．４ｍｍ）に
設定したのは、接着剤の厚さが仮止め時の０．４ｍｍか
ら封止時の５０μｍに減少することを考慮し、封止後の
圧力が約１ａｔｍになるようにするためである。次に、
治具を用いてガラス基板１ａと紫外線硬化接着剤６を塗
布した封止ガラス７ａとを位置合わせして貼り合わせ
る。この時、接着剤の断面は、図３（ａ）に示すように
なっており、紫外線硬化接着剤６はガラス基板１ａ側に
ぬれ広がっていく。Then, as shown in FIG. 2D, the glass substrate 1a and the sealing glass 7a are carried into the hermetic chamber 8 and once evacuated to about 0.67 Pa (= 0.005 torr). , Introducing nitrogen gas, 1.27E4Pa
(= 0.125 atm). here,
The pressure was set to 0.125 atm (= 50 μm / 0.4 mm) in consideration of the fact that the thickness of the adhesive was reduced from 0.4 mm at the time of temporary fixing to 50 μm at the time of sealing. This is because the pressure is about 1 atm. next,
Using a jig, the glass substrate 1a and the sealing glass 7a to which the ultraviolet curing adhesive 6 has been applied are aligned and bonded. At this time, the cross section of the adhesive is as shown in FIG. 3A, and the ultraviolet-curing adhesive 6 spreads on the glass substrate 1a side.
【００２０】次に、気密室８内に窒素ガスを導入し、
１．０１３２５Ｅ５Ｐａ（＝１ａｔｍ）に加圧して、ガ
ラス基板１ａと封止ガラス７ａの隙間の紫外線硬化接着
剤６の厚さをギャップスペーサ５の大きさ５０μｍにす
る。通常、気密室８内の圧力の増加に伴い、封止内部の
圧力が均衡するように紫外線硬化接着剤６の厚さの減少
と封止内部体積の減少（ボイルの法則より、接着剤の厚
さ×封止内部面積×圧力＝一定）があるが、本実施例で
は、上述した条件で封止することにより、封止領域内外
の圧力差を生じさせることなく加圧することが可能であ
る。この時、接着剤の断面は図３（ｂ）に示すように、
紫外線硬化接着剤６は塗布したパターンより封止の外側
部分のみに広がる。Next, nitrogen gas is introduced into the airtight chamber 8,
The thickness of the ultraviolet curing adhesive 6 in the gap between the glass substrate 1a and the sealing glass 7a is reduced to 50 μm by applying a pressure of 1.01325E5 Pa (= 1 atm). Normally, as the pressure in the hermetic chamber 8 increases, the thickness of the ultraviolet curing adhesive 6 and the volume of the sealing internal volume decrease so that the pressure inside the sealing is balanced (by the Boyle's law, the thickness of the adhesive is reduced). However, in the present embodiment, it is possible to apply pressure without causing a pressure difference between the inside and outside of the sealing region by performing sealing under the above-described conditions. At this time, the cross section of the adhesive is as shown in FIG.
The ultraviolet curing adhesive 6 spreads only to the outer portion of the seal from the applied pattern.
【００２１】なお、図３では、塗布した紫外線硬化接着
剤６が封止内部へ広がらないようにしているが、減圧雰
囲気をより低く、または、高圧雰囲気を１気圧より大き
くして、紫外線硬化接着剤６を塗布パターンより封止内
部側へ広げることも可能である。In FIG. 3, the applied UV-curable adhesive 6 is prevented from spreading into the inside of the sealing. However, the UV-curable adhesive is formed by lowering the reduced-pressure atmosphere or increasing the high-pressure atmosphere to more than 1 atm. It is also possible to spread the agent 6 from the application pattern to the inside of the sealing.
【００２２】次に、高圧水銀ランプ１３により、波長３
５０ｎｍで照度が１００ｍＷ／ｃｍ２程度の紫外線を１
２０秒程度照射する。石英ガラス１２と封止ガラス７ａ
を透過した紫外線は、５０％程度に照度が低下するた
め、紫外線硬化接着剤６に約６０００ｍＪ／ｃｍ2の紫
外線が照射され、硬化反応が起き、図２（ｅ）に示すよ
うに、ガラス基板１ａと封止ガラス７ａが接着される。Next, a wavelength of 3
UV light with an illuminance of about 100 mW / cm2 at 50 nm
Irradiate for about 20 seconds. Quartz glass 12 and sealing glass 7a
Since the illuminance of the ultraviolet light that has passed through is reduced to about 50%, the ultraviolet curable adhesive 6 is irradiated with ultraviolet light of about 6000 mJ / cm 2 , and a curing reaction occurs, as shown in FIG. 1a and the sealing glass 7a are bonded.
【００２３】ここで、高圧雰囲気は、有機ＥＬデバイス
の使用環境と同じ圧力が好ましく、紫外線硬化接着剤に
封止内部と使用環境の圧力差による力が加わらないよう
にする。例えば、水銀ランプにより紫外線を照射すると
き温度が上昇する場合は、その分、１気圧より大きい圧
力を加える。Here, the high-pressure atmosphere is preferably at the same pressure as the environment in which the organic EL device is used, so that a force due to a pressure difference between the inside of the sealing and the environment is not applied to the ultraviolet curing adhesive. For example, when the temperature rises when irradiating ultraviolet rays with a mercury lamp, a pressure greater than 1 atm is applied accordingly.
【００２４】以上、説明したように、本実施例によれ
ば、封止ガラス７ａとガラス基板１ａを紫外線硬化接着
剤６で封止するに際して、気密室８を所定の圧力に減圧
した後、封止領域内外の圧力差を生じさせないように加
圧、接着するため、塗布した紫外線硬化接着剤６の塗布
パターンが内側あるいは外側に広がることを制御でき、
接着剤の厚さを一定にすることができる。As described above, according to this embodiment, when the sealing glass 7a and the glass substrate 1a are sealed with the ultraviolet curing adhesive 6, the pressure in the hermetic chamber 8 is reduced to a predetermined pressure, and then the sealing is performed. Pressing and bonding so as not to cause a pressure difference between the inside and outside of the stop area, it is possible to control that the applied pattern of the applied ultraviolet curing adhesive 6 spreads inward or outward,
The thickness of the adhesive can be made constant.
【００２５】また、本実施例では、紫外線硬化接着剤６
の中に、ギャップスペーサ５が混入されているため、封
止後の接着層の厚さを制御することができ、封止ガラス
７ａをガラス基板１ａに平行に封止することができる。In this embodiment, the ultraviolet curing adhesive 6
Since the gap spacer 5 is mixed in the substrate, the thickness of the adhesive layer after sealing can be controlled, and the sealing glass 7a can be sealed in parallel with the glass substrate 1a.
【００２６】更に、ギャップスペーサ５としてエポキシ
系樹脂を用いることにより、紫外線硬化接着剤６との塗
れ性を良好に保つことができ、気密室８の加圧に伴って
紫外線硬化接着剤６が薄くなってきても、封止内部の機
密性を保つことができ、また、接着剤を硬化後、大気圧
雰囲気に保持した際に、樹脂製のギャップスペーサは加
圧時に塑性変形しているために、ガラス等のギャップス
ペーサのように復元により接着力が低下することを防止
することができる。Further, by using an epoxy resin as the gap spacer 5, good wettability with the ultraviolet curing adhesive 6 can be maintained, and the ultraviolet curing adhesive 6 becomes thinner with the pressurization of the airtight chamber 8. Even if it becomes increasingly possible, the confidentiality inside the seal can be maintained, and the resin gap spacer is plastically deformed at the time of pressurization when the adhesive is cured and held in the atmospheric pressure atmosphere. In addition, it is possible to prevent the adhesive strength from being reduced due to restoration as in the case of a gap spacer made of glass or the like.
【００２７】［実施例２］次に、本発明の第２の実施例
について、図面を参照して説明する。図４は、本発明の
第２の実施例に係る有機薄膜ＥＬデバイス構造を説明す
るための断面図である。[Embodiment 2] Next, a second embodiment of the present invention will be described with reference to the drawings. FIG. 4 is a cross-sectional view for explaining an organic thin-film EL device structure according to a second embodiment of the present invention.
【００２８】図４を参照すると、本実施例と前記した第
１の実施例との相違点は、封止キャップが金属からな
り、紫外線硬化接着剤を硬化するための紫外線は、基板
ガラス１ａ側から照射することのみである。従って、そ
の他の点については、前記した第１の実施例と同様の構
成で、同様に製造することができる。Referring to FIG. 4, the difference between this embodiment and the first embodiment is that the sealing cap is made of metal and the ultraviolet light for curing the ultraviolet curing adhesive is applied to the substrate glass 1a side. It is only to irradiate from. Therefore, in other respects, it can be manufactured similarly with the same configuration as the first embodiment.
【００２９】また、前記した第１の実施例と同様に、紫
外線硬化接着剤６は基板ガラス１ａ側に塗布してもよ
く、塗布した紫外線硬化接着剤の広がりを制御するに
は、減圧雰囲気をより低くするまたは高圧雰囲気を１気
圧より大きくして、塗布パターンより封止内部側へ広げ
ることも可能である。As in the first embodiment, the UV-curable adhesive 6 may be applied to the substrate glass 1a side. To control the spread of the applied UV-curable adhesive, a reduced-pressure atmosphere is required. It is also possible to lower the pressure or set the high-pressure atmosphere to more than 1 atm, and to spread the coating pattern toward the inside of the sealing.
【００３０】また、本実施例においても、高圧雰囲気は
有機ＥＬデバイスの使用環境と同じ圧力が好ましく、紫
外線硬化接着剤に封止内部と使用環境の圧力差による力
が加わらないようにする必要がある。Also in this embodiment, the high-pressure atmosphere is preferably at the same pressure as the environment in which the organic EL device is used, and it is necessary to prevent the ultraviolet curing adhesive from being subjected to a force due to the pressure difference between the inside of the seal and the environment. is there.
【００３１】[0031]
【発明の効果】以上説明したように、本発明によれば、
接着剤を塗布した封止キャップと透明絶縁基板を貼り合
わせ、加圧し、透明絶縁基板と封止用キャップの間の接
着剤の厚さを薄くする時、塗布した接着剤の塗布パター
ンが内側あるいは外側に広がることを制御でき、接着剤
の厚さを一定にできるという効果を奏する。As described above, according to the present invention,
When the sealing cap with the adhesive applied and the transparent insulating substrate are bonded together and pressurized to reduce the thickness of the adhesive between the transparent insulating substrate and the sealing cap, the applied pattern of the applied adhesive is inward or It is possible to control the spread to the outside, and it is possible to make the thickness of the adhesive constant.
【００３２】その理由は、透明絶縁基板と封止用キャッ
プの間の接着剤の厚さは、封止後はギャップスペーサの
大きさで限定され、接着剤の厚さの減少、すなわち封止
内部空間の体積の減少に伴う封止内部空間の圧力の増大
に見合った外圧を加えるため、封止後の封止領域内外の
圧力差が生じることがないからである。The reason is that the thickness of the adhesive between the transparent insulating substrate and the sealing cap is limited by the size of the gap spacer after the sealing, and the thickness of the adhesive is reduced, that is, the inside of the sealing is reduced. This is because an external pressure corresponding to the increase in the pressure in the sealed internal space accompanying the decrease in the volume of the space is applied, so that there is no pressure difference between the inside and outside of the sealed region after the sealing.
【図１】本発明の第１の実施例に係る有機薄膜ＥＬデバ
イスの構造を説明するための断面図である。FIG. 1 is a cross-sectional view for explaining a structure of an organic thin film EL device according to a first embodiment of the present invention.
【図２】本発明の第１の実施例に係る有機薄膜ＥＬデバ
イスの製造方法を説明するための図であり、（ａ）、
（ｂ）、（ｅ）は工程断面図、（ｃ）は接着剤を塗布し
た封止ガラスを示す平面図、（ｄ）は気密室の配管接続
図である。FIGS. 2A and 2B are views for explaining a method of manufacturing an organic thin film EL device according to a first embodiment of the present invention, wherein FIGS.
(B) and (e) are process cross-sectional views, (c) is a plan view showing a sealing glass coated with an adhesive, and (d) is a pipe connection diagram of an airtight chamber.
【図３】本発明の第１の実施例に係る有機薄膜ＥＬデバ
イスの製造方法の接着剤が広がる様子を模式的に説明す
るためのを説明するための断面図である。FIG. 3 is a cross-sectional view for schematically explaining how the adhesive spreads in the method for manufacturing an organic thin-film EL device according to the first embodiment of the present invention.
【図４】本発明の第２の実施例に係る有機薄膜ＥＬデバ
イスの構造を説明するための断面図である。FIG. 4 is a cross-sectional view illustrating a structure of an organic thin-film EL device according to a second embodiment of the present invention.
１ 透明絶縁基板 １ａ ガラス基板 ２ 電極配線 ３ 有機化合物薄膜 ３ａ 正孔輸送層 ３ｂ 電子輸送層 ４ 陰極 ５ ギャップスペーサ ６ 紫外線硬化接着剤 ７ 封止キャップ ７ａ 封止ガラス ７ｂ 封止金属ギャップ ８ 気密室 ９ バルブ １０ 窒素ガス配管 １１ 真空ポンプ配管 １２ 石英ガラス １３ 高圧水銀ランプ １４ 圧力計 DESCRIPTION OF SYMBOLS 1 Transparent insulating substrate 1a Glass substrate 2 Electrode wiring 3 Organic compound thin film 3a Hole transport layer 3b Electron transport layer 4 Cathode 5 Gap spacer 6 UV curing adhesive 7 Sealing cap 7a Sealing glass 7b Sealing metal gap 8 Hermetic chamber 9 Valve 10 Nitrogen gas pipe 11 Vacuum pump pipe 12 Quartz glass 13 High pressure mercury lamp 14 Pressure gauge
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭63−226684（ＪＰ，Ａ) 特開 平10−335061（ＪＰ，Ａ) 特開 平５−109482（ＪＰ，Ａ) 特開 平10−233283（ＪＰ，Ａ) 特開 平４−48755（ＪＰ，Ａ) 特開 平２−144942（ＪＰ，Ａ) 特開 平７−86457（ＪＰ，Ａ) 特開 昭63−258026（ＪＰ，Ａ) 特開 昭57−27595（ＪＰ，Ａ) 実開 平１−71899（ＪＰ，Ｕ) (58)調査した分野(Int.Cl.7，ＤＢ名) H05B 33/00 - 33/28 H01L 23/02 - 23/10 ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-63-226684 (JP, A) JP-A-10-3355061 (JP, A) JP-A-5-109482 (JP, A) JP-A-10-108 233283 (JP, A) JP-A-4-48755 (JP, A) JP-A-2-144942 (JP, A) JP-A-7-86457 (JP, A) JP-A-63-258026 (JP, A) JP-A-57-27595 (JP, A) JP-A-1-71899 (JP, U) (58) Fields investigated (Int. Cl. 7 , DB name) H05B 33/00-33/28 H01L 23/02 -23/10
Claims (3)
Ｌ）デバイスが形成された透明絶縁基板と封止用キャッ
プとを、紫外線硬化接着剤を用いて封止する有機薄膜Ｅ
Ｌデバイスの製造方法において、 （ａ）前記透明絶縁基板または前記封止用キャップのい
ずれか、または双方に前記紫外線硬化接着剤を塗布する
工程と、 （ｂ）前記透明絶縁基板と前記封止用キャップとを気密
室内に導入し、所定の圧力の窒素雰囲気中で減圧する工
程と、 （ｃ）前記減圧工程後、減圧雰囲気中で、前記透明絶縁
基板と前記封止用キャップとを位置合わせし、前記紫外
線硬化接着剤を硬化させることなく、仮止めする工程
と、 （ｄ）前記仮止め工程後、前記紫外線硬化接着剤を硬化
させることなく、前記気密室内を前記（ｂ）の工程の圧
力よりも高い、所定の圧力に保持することによって、前
記透明絶縁基板と前記封止用キャップとを圧着させる工
程と、 （ｅ）前記紫外線硬化接着剤に紫外線を照射して、該紫
外線硬化接着剤を硬化させる工程と、を含むことを特徴
とする有機薄膜ＥＬデバイスの製造方法。1. An organic thin-film electroluminescence (E)
L) An organic thin film E for sealing the transparent insulating substrate on which the device is formed and the sealing cap with an ultraviolet curing adhesive.
In the method for manufacturing an L device, (a) applying the ultraviolet curing adhesive to one or both of the transparent insulating substrate and the sealing cap; and (b) the transparent insulating substrate and the sealing cap. Introducing the cap into an airtight chamber and reducing the pressure in a nitrogen atmosphere at a predetermined pressure ; and (c) aligning the transparent insulating substrate and the sealing cap in a reduced pressure atmosphere after the pressure reducing step. , The ultraviolet
Temporarily fixing without curing the line-curable adhesive ; and (d) curing the ultraviolet-curable adhesive after the temporary fixing step.
Holding the transparent insulating substrate and the cap for sealing by maintaining the hermetic chamber at a predetermined pressure higher than the pressure in the step (b) without pressure, Irradiating the ultraviolet-curable adhesive with ultraviolet light to cure the ultraviolet-curable adhesive, the method comprising the steps of:
フッ素樹脂、シリコーン樹脂、アクリル樹脂などの高分
子からなる樹脂の一種以上を主成分とし、略円柱形状ま
たは球状のギャップスペーサが混合され、該ギャップス
ペーサにより前記紫外線硬化接着剤の封止後の接着厚が
定められる、ことを特徴とする請求項１記載の有機薄膜
ＥＬデバイスの製造方法。2. An epoxy resin ,
Fluorine resin, silicone resin, acrylic resin, etc.
As a main component one or more kinds of resins consisting of the child, substantially cylindrical or
2. The method for manufacturing an organic thin film EL device according to claim 1, wherein a gap thickness of the ultraviolet curable adhesive after sealing is determined by said gap spacer.
記（ｄ）の工程の所定の圧力をＰ２、前記（ｃ）の工程
の前記透明絶縁基板と前記封止用キャップとを仮止めし
た後の封止内部空間の体積をＶ１、前記（ｄ）の工程の
前記透明絶縁基板と前記封止用キャップとを圧着させた
後の封止内部空間の体積をＶ２としたとき、予め定められたＶ１とＶ２との関係により、Ｐ２がデバ
イスの使用条件下での圧力に略等しくなるように、Ｐ１
が定められる、 ことを特徴とする請求項１記載の有機薄
膜ＥＬデバイスの製造方法。3. The predetermined pressure in the step (b) is P1, the predetermined pressure in the step (d) is P2, and the transparent insulating substrate and the sealing cap in the step (c) are connected. Assuming that the volume of the sealed internal space after the temporary fixing is V1, and the volume of the sealed internal space after the transparent insulating substrate and the sealing cap are crimped in the step (d) is V2, P2 is determined by the predetermined relationship between V1 and V2.
P1 is set to be approximately equal to the pressure under the conditions of use of the chair.
The method for manufacturing an organic thin film EL device according to claim 1 , wherein is defined .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10202574A JP3139462B2 (en) | 1998-07-17 | 1998-07-17 | Manufacturing method of organic thin film EL device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10202574A JP3139462B2 (en) | 1998-07-17 | 1998-07-17 | Manufacturing method of organic thin film EL device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000036384A JP2000036384A (en) | 2000-02-02 |
| JP3139462B2 true JP3139462B2 (en) | 2001-02-26 |
Family
ID=16459757
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10202574A Expired - Fee Related JP3139462B2 (en) | 1998-07-17 | 1998-07-17 | Manufacturing method of organic thin film EL device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3139462B2 (en) |
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|---|---|---|---|---|
| JP2000133439A (en) * | 1998-10-22 | 2000-05-12 | Minolta Co Ltd | Organic electroluminescent element and its manufacture |
| JP3536763B2 (en) * | 2000-02-04 | 2004-06-14 | 日本電気株式会社 | Sealing device |
| JP4723169B2 (en) * | 2000-10-11 | 2011-07-13 | オライオンテクノロジーズ，エルエルシー | Thin, flexible and adaptable sheet-like electroluminescent structure with UV curable urethane jacket |
| JP2002151252A (en) * | 2000-11-16 | 2002-05-24 | Stanley Electric Co Ltd | Organic el display device |
| US6537688B2 (en) * | 2000-12-01 | 2003-03-25 | Universal Display Corporation | Adhesive sealed organic optoelectronic structures |
| JP4894987B2 (en) * | 2001-06-29 | 2012-03-14 | 三洋電機株式会社 | Manufacturing method of display panel |
| TW517356B (en) * | 2001-10-09 | 2003-01-11 | Delta Optoelectronics Inc | Package structure of display device and its packaging method |
| WO2003077608A1 (en) * | 2002-03-12 | 2003-09-18 | Hitachi Chemical Co., Ltd. | Strip member, sealing medium including the same, sheet sealing medium, sealing substrate, sealed structure, mount device and process for producing these |
| JP2003317953A (en) * | 2002-04-26 | 2003-11-07 | Seiko Epson Corp | Manufacturing method for organic electroluminescent device, organic electroluminescent device, manufacturing device for organic electroluminescent device, and electronic apparatus |
| KR100889763B1 (en) * | 2002-11-20 | 2009-03-20 | 삼성모바일디스플레이주식회사 | Method for making a electroluminescent device and a electroluminescent device made by it |
| JP4712298B2 (en) * | 2002-12-13 | 2011-06-29 | 株式会社半導体エネルギー研究所 | Method for manufacturing light emitting device |
| KR101032337B1 (en) | 2002-12-13 | 2011-05-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Light emitting device and manufacturing method thereof |
| TWI324829B (en) * | 2004-02-06 | 2010-05-11 | Advanced Semiconductor Eng | Optical semiconductor package and method for manufacturing the same |
| JP2005320404A (en) * | 2004-05-07 | 2005-11-17 | Nagase Chemtex Corp | Adhesive composition for sealing electronic component and manufacturing method of organic electroluminescence device |
| US7378724B2 (en) * | 2005-03-24 | 2008-05-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Cavity structure for semiconductor structures |
| JP2007018900A (en) * | 2005-07-08 | 2007-01-25 | Dainippon Kaken:Kk | Sealing device and sealing method |
| JP2007189032A (en) * | 2006-01-12 | 2007-07-26 | Nippon Steel Chem Co Ltd | Manufacturing method of semiconductor device with sealed space |
| DE102006061943B4 (en) | 2006-12-29 | 2023-03-30 | Pictiva Displays International Limited | Light Emitting Device |
| US8830695B2 (en) * | 2007-01-25 | 2014-09-09 | Osram Opto Semiconductors Gmbh | Encapsulated electronic device |
| JP2009033007A (en) * | 2007-07-30 | 2009-02-12 | Kyoritsu Kagaku Sangyo Kk | Method for manufactureing sealed hollow structure and hollow structure manufactured by the method |
| JP5224949B2 (en) * | 2008-07-10 | 2013-07-03 | 株式会社東芝 | Manufacturing method of three-dimensional image display device |
| WO2011104997A1 (en) * | 2010-02-23 | 2011-09-01 | Jsr株式会社 | Organic el element, organic el display device, organic el lighting device, and curable composition for sealing agent |
| EP2586077B1 (en) * | 2010-06-22 | 2016-12-14 | Koninklijke Philips N.V. | Organic electroluminescence device with separating foil |
| JP2012028265A (en) * | 2010-07-27 | 2012-02-09 | Toshiba Tec Corp | Organic el device and manufacturing method thereof |
| CN111276588B (en) | 2018-12-05 | 2021-09-28 | 光宝光电(常州)有限公司 | Light emitting package structure and manufacturing method thereof |
| US11456287B2 (en) * | 2019-08-28 | 2022-09-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Package structure and method of fabricating the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63226684A (en) * | 1986-10-31 | 1988-09-21 | 双葉電子工業株式会社 | Electric field light emitting display panel |
| JPH0171899U (en) * | 1987-11-02 | 1989-05-15 | ||
| JP2794908B2 (en) * | 1990-06-15 | 1998-09-10 | 日本電気株式会社 | Manufacturing method of package type semiconductor device |
| JPH10335061A (en) * | 1997-06-04 | 1998-12-18 | Matsushita Electric Ind Co Ltd | Method and device for manufacturing organic electroluminescent element |
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1998
- 1998-07-17 JP JP10202574A patent/JP3139462B2/en not_active Expired - Fee Related
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| Publication number | Publication date |
|---|---|
| JP2000036384A (en) | 2000-02-02 |
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