JP3130838B2 - Semiconductor test apparatus and semiconductor device test method - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a test for electrical characteristics of a semiconductor device, and more particularly to a test device and a test method for a semiconductor device arranged and formed in a matrix on a semiconductor wafer.

[0002]

2. Description of the Related Art FIGS. 10 and 11 are a block diagram showing an example of the configuration of a conventional semiconductor test apparatus for testing the electrical characteristics of a semiconductor device and a flowchart showing a conventional method of testing a semiconductor device. .

A conventional semiconductor test apparatus 300 includes a measuring jig 322 including a probe card and a probing apparatus 321.
And a semiconductor device on the wafer to be measured 323 loaded in the probing apparatus are tested via a measuring jig 322 according to a test program 330 created based on predetermined measurement conditions and standards. A test circuit unit 311 and a data storage unit 312 for storing test result data obtained by the test together with positional coordinate information of the semiconductor device on the wafer 323 to be measured, and a statistical operation process is performed on the stored test result data. The tester unit 310 includes a data processing unit 313 and a data display unit 315 for displaying data obtained by the data processing unit 313.

In a conventional method for testing a semiconductor device, a measuring jig including a probe card is mounted on a probing device, and a wafer on which the semiconductor device is arranged and formed is loaded on the probing device to test the semiconductor device. Preparation step S for supplying a test program to be tested to the tester unit
21 and a test execution step S22 of testing all the semiconductor devices on the wafer according to the test program and storing test result data of each of the semiconductor devices in a data storage together with positional coordinate information of the semiconductor device on the wafer. And a step for determining whether or not the number of non-defective semiconductor devices obtained from the wafer as a result of the test is equal to or greater than a predetermined yield reference number predetermined according to the size of the wafer or the type of the semiconductor device. Stay determination step S23
As a result of the yield determination, when the number of non-defective products is less than the yield reference number, the position coordinate information paired with the test result data of the semiconductor device on the wafer stored in the data storage unit is obtained. A diffusion element characteristic manual investigation step S24 for measuring the characteristic of the characteristic checking diffusion element in the semiconductor device selected for reference.

[0005] Therefore, in the conventional method of testing a semiconductor device, the number of non-defective products obtained is abnormally low, and for a wafer determined to require a failure analysis, the electrical characteristics of the semiconductor device obtained by the above method are determined. Based on the characteristic data and the electrical characteristic data of the diffusion element, a correlation analysis is performed between the electrical characteristic failure item of the semiconductor device and the diffusion element characteristic (hFE, resistance, etc.), and failure analysis is performed.

[0006]

In the above-described conventional semiconductor test apparatus and semiconductor device test method, a test is performed so that the electrical characteristics of the semiconductor device correspond to the characteristics of the diffusion elements in the semiconductor device on a one-to-one basis. Since there was no function to automatically collect data, as a result of electrical characteristics tests on semiconductor devices, the number of non-defective products obtained from a specific wafer for some reason was less than the yield standard number, and it was necessary to investigate the characteristics of diffusion elements When a failure occurs, based on the test result data of the semiconductor device on the wafer stored in the data storage unit of the semiconductor test device, a person can look at the position of the defective semiconductor device on the wafer, and Since a device is selected and the characteristics of the diffusion element are investigated, there is a problem that much time is required for failure analysis.

Further, in the conventional semiconductor test apparatus and the method for testing a semiconductor device, a region where good and defective semiconductor devices exist in a well-balanced manner in a wafer to be analyzed is most effective in performing a failure analysis. It did not have a function and a procedure for automatically collecting important data.

According to the present invention, in a test of an electrical characteristic of a semiconductor device, when a wafer having an abnormally small number of obtained non-defective products is required and a failure analysis needs to be performed, the non-defective semiconductor device on the wafer is judged to be non-defective. A region where non-defective products exist in good balance is selected by a predetermined procedure, and the electrical characteristics of the diffusion element, which is one of the most important means of failure analysis of the wafer, is one-to-one with the electrical characteristics of the semiconductor device. To provide a semiconductor test apparatus and a semiconductor device test method capable of automatically collecting the most effective data in performing a failure analysis and automatically reducing the number of failure analysis steps by performing automatic measurement in association with each other. It is the purpose.

[0009]

According to the present invention, there is provided a semiconductor test apparatus comprising a prober section and a tester section for performing an electrical characteristic test of a semiconductor device, wherein the prober section arranges the semiconductor devices in a matrix. It comprises a probing device for loading the formed wafer and a measuring jig including a probe card mounted on the probing device, and the tester unit probes the semiconductor device at the coordinate position on the wafer selected by the tester unit. Means for controlling the prober section, and power supply to the semiconductor device .
Gas characteristic test result data and its the measurement result data characteristic checking diffusion elements formed in the semiconductor device
Position coordinate information means for storing together as a pair on the wafer respectively the semiconductor device, all on the wafer
At the end of the electrical characteristic test on the semiconductor device,
Data processing unit for determining wafer yield and appropriate analysis
Data collection column selection process for collecting analysis data
A data determination unit including a function of performing the data determination.
With respect to the analysis data sampling sequence selected by the section, the electrical characteristic test result data of the semiconductor device and the
It is possible to automatically measure the characteristics of the diffusion element for characteristic checking in one-to-one correspondence.

Further, the method for testing a semiconductor device according to the present invention comprises:
A test preparation step for preparing an electrical characteristic test of the semiconductor device, wherein one direction of the matrix arrangement of the semiconductor devices on the wafer is an X-axis direction and a direction perpendicular to the X-axis direction is a Y-axis direction; A test execution step of performing an electrical characteristic test of the apparatus with a semiconductor test apparatus, and a yield determination for determining whether or not the number of non-defective products obtained from the wafer is equal to or greater than a yield reference number based on a result of the test execution step. And, if the number of non-defective products obtained from the wafer in the yield determination step is less than the yield reference number, the number of non-defective products and the number of non-defective products in each column in the X-axis direction and the Y-axis direction are determined. Tabulation is performed, and the ratio of the number of non-defective products to the number of defective products (the number of non-defective products / the number of defective products) is calculated for each column for all the columns. This calculation result is a predetermined value (hereinafter, p To) And the sum of the number of non-defective products and the number of defective products (the number of non-defective products + the number of defective products) is calculated for each of the columns extracted in the analysis data sampling column extraction step. An analysis data collection column selecting step of selecting a large column; and a test result data obtained by performing an electrical characteristic test of each semiconductor device in the column selected in the analysis data collection column selection step, the coordinates of the semiconductor device. The analysis data collection step of storing the information together with the information in the data storage unit of the semiconductor test apparatus, the measurement preparation step of preparing for measuring the characteristics of the diffusion elements in each semiconductor device, and the analysis data collection column selection step described above. The data obtained by measuring the electrical characteristics of the diffusion elements included in each semiconductor device in the column are stored in the data storage together with the position coordinate information of the semiconductor device. And a measurement data acquisition step that.

According to the semiconductor test apparatus and the method for testing a semiconductor device, the position coordinate information of the semiconductor device determined to be good or defective in the electrical characteristic test of the semiconductor device and the good / bad determination result data in the electrical characteristic test Are paired and all are stored in the data storage unit. Next, based on the stored information, the number of non-defective products and the number of non-defective products are totaled for each column in all the columns in the X-axis direction and the Y-axis direction, and the ratio of the number of non-defective products to the number of defective products (the number of non-defective products / the number of defective products) is calculated. , The column whose ratio is closest to p is extracted. Furthermore, by selecting the column having the largest total value of the number of non-defective products and the number of non-defective products among all the extracted columns, the non-defective product and the non-defective product exist in a well-balanced manner, and include the most effective elements in the defect analysis. You can select a column.

[0012] Data of the electrical characteristics of the semiconductor device and the electrical characteristics of the diffusion element in the semiconductor device are sampled for the selected column, and the semiconductor test apparatus is controlled to store the data together with the data sampling position coordinate information. Thus, the most effective data can be obtained automatically, and the number of failure analysis steps can be reduced.

[0013]

Next, embodiments of the present invention will be described in detail with reference to the drawings.

FIG. 1 is a block diagram of a semiconductor test apparatus according to a first embodiment of the present invention.

The semiconductor test apparatus 100 includes a tester 1
10 and a prober section 120.

The tester section 110 includes a source system such as a voltage source and a current source for supplying a predetermined voltage and current to the object to be measured, a matrix system for switching measurement terminals, and a measurement system (all are illustrated). ), A data storage unit 112 composed of a semiconductor memory, a magnetic recording medium (not shown), or a combination thereof, a data processing unit 113, and a data determination unit 1.
14 and test results statistically processed by the data processing unit 113
And a data display unit 115 for displaying data and the like. The data processing unit 113 and the data determination unit
Reference numeral 114 denotes the semiconductor test apparatus 100, for example.
Magnetic recording medium as software to control CPU
Body, network or a combination of these (all shown
Not provided).

When analyzing a wafer having an abnormally small number of non-defective products obtained as a result of an electrical characteristic test of a semiconductor device, an analysis data sampling column selection process enabling appropriate automatic collection of analysis data. Is executed by the data determination unit 114.

The test program 130 is supplied as digital data to the test circuit unit 111 via a magnetic recording medium, a network, or a combination thereof (both are not shown).

Next, the operation of the semiconductor test apparatus 100 will be described.

A measuring jig 122 including a probe card (not shown) corresponding to a semiconductor device to be tested is mounted on a probing device 121, and a wafer to be measured 123 on which the semiconductor device to be tested is arranged and formed is probed. After loading a test program 130 for testing the electrical characteristics of the semiconductor device into the test circuit unit 111, the test circuit unit 111 performs an electrical characteristics test on each semiconductor device on the wafer 123 to be measured. The position coordinate information on the wafer and the good / bad determination result data are paired and stored together in the data storage unit 112. Each time the test of all the semiconductor devices on the measured wafer 123 is completed,
The data processing unit 113 performs the yield determination. If the number of conforming products equal to or greater than the yield reference number is not obtained and the failure analysis is required, the data determination unit 114 performs a process of selecting an analysis data collection column.

The selection process of the analysis data collection column is performed based on the position coordinate information of the semiconductor device on the wafer on the wafer stored in the data storage unit 112 and the pass / fail judgment result data. The number of non-defective products and the number of defective products are totaled for each column in each direction of the Y-axis, the ratio of the number of non-defective products to the number of defective products (the number of non-defective products / the number of defective products) is calculated, and the column whose ratio is closest to p is extracted. Further, the total value of the number of non-defective products and the number of non-defective products in each of the extracted columns (the number of non-defective products +
By selecting the column with the largest number of defective products, the non-defective product and the defective product exist in a well-balanced manner, and the column containing the most effective element in the failure analysis is selected.

FIG. 2 is a diagram for specifically explaining the contents of the above-described analysis data sampling column selection processing with p = 1. As a result of the electrical characteristic test of the semiconductor device on the semiconductor wafer 201, good semiconductor devices 202 and defective semiconductor devices 203 are distributed as shown in FIG. 2, and it is necessary to collect analysis data on the semiconductor wafer 201. At this time, the selection of the analysis data collection sequence is performed as follows.

First, the X-axis direction of the semiconductor wafer 201,
The number of non-defective products and the number of defective products of the semiconductor device for all the columns in the Y-axis direction are totaled for each column, the ratio of the number of non-defective products to the number of defective products (the number of non-defective products / the number of defective products) is calculated, and the column whose ratio is closest to 1 is extracted. I do.
In the example of FIG. 2, the row A has 5 non-defective products and 5 defective products, the B column has 7 non-defective products and 7 defective products, and the ratio between the non-defective products and the defective products in both the A and B columns is exactly the same. 1 and row A, B
Two columns are extracted. Next, the total value of the number of non-defective products and the number of defective products in each of the columns A and B is calculated.
There are 0 rows and 14 rows, and the B row with the largest total value is selected as the analysis data collection row.

Next, an electrical characteristic test is performed again on all the semiconductor devices in the column selected by the above-described analysis data sampling column selection process, and the electrical characteristic test result data is displayed together with the position coordinate information of each semiconductor device. Is stored in the data storage unit 112. Next, the measuring jig including the probe card is replaced, and the test circuit unit 111 is caused to read the test program 130 for measuring the characteristics of the diffusion element. After that, the characteristic measurement is performed on the diffusion elements in all the semiconductor devices in the column selected by the above-described analysis data sampling column selection processing, and the characteristic measurement result data of the diffusion element is displayed together with the position coordinate information of the semiconductor device to be measured. Is stored in the data storage unit 112.

In the electrical characteristic test and the diffusion element characteristic measurement of the semiconductor device in the column selected in the analysis data sampling column selection process, the position coordinate information of the semiconductor device already stored in the data storage unit 112 is used. Is used to control the probing device 121 with the probing device control signal 140 supplied from the tester unit 110 side, so that the electrical characteristic test result data of the semiconductor device in the selected column and the diffusion element in the semiconductor device Can be automatically collected in one-to-one correspondence.

That is, according to the semiconductor test apparatus of the first embodiment of the present invention, as a result of the electrical characteristic test of the semiconductor device arranged and formed on the semiconductor wafer, the number of non-defective products obtained from the wafer increases. When the failure analysis of the wafer is necessary because the number is less than the retention reference number, the position coordinate information of the semiconductor device on the wafer already stored in the data storage unit of the semiconductor test apparatus and the goodness in the electrical characteristic test are obtained. The number of non-defective products and the number of defective products are totaled for each column in each of the X-axis and Y-axis directions based on the defect determination result data, and the ratio of the number of non-defective products to the number of defective products (the number of non-defective products / the number of defective products) is calculated. By calculating a column whose ratio is closest to p, and by selecting a column having the largest “number of non-defective products + number of defective products” among all the extracted columns, a non-defective item is determined as a data collection column for analysis. Defective products are balanced A column containing the most effective elements for failure analysis can be selected, and data collection of the electrical characteristics of the semiconductor device and the electrical characteristics of the diffusion element in the semiconductor device is performed on the selected column. The most effective data can be automatically obtained by controlling the semiconductor test apparatus so as to store the data together with the data collection position coordinate information, and the cause of the failure can be quickly clarified and the man-hour required for the failure analysis can be reduced.

The specific numerical value of the predetermined value "p" which is a reference for extracting a column in the analysis data sampling column selection process is preferably p = 1 in a normal failure analysis. It may be appropriately determined according to the purpose of the analysis.

FIG. 3 is a flowchart showing a method for testing a semiconductor device according to the second embodiment of the present invention. FIGS. 4 to 9 show some steps in the flowchart shown in FIG. It is a flowchart shown in more detail.

The method for testing a semiconductor device according to the second embodiment of the present invention includes a test preparation step S1 for preparing in advance an electrical characteristic test for a semiconductor device, and an electrical characteristic test for the semiconductor device. Test execution step S2 to be performed
And a yield determination step S3 for determining whether or not the number of non-defective products obtained from the wafer as a result of the test execution step S2 is equal to or greater than a yield reference number. If the number of non-defective products obtained from is less than the yield reference number, the X-axis direction of the wafer,
The ratio of the number of non-defective products to the number of defective products (the number of non-defective products / the number of defective products) is calculated by summing up the number of non-defective products and the number of non-defective products for all the columns in the Y-axis direction, and the column whose calculation result is closest to p is extracted. The analysis data sampling column extraction step S4, and the sum of the number of non-defective products and the number of defective products (the number of non-defective products + the number of defective products) is calculated for each column extracted in the analysis data sampling column extraction step S4, and the column having the largest total value is calculated. Analysis data collection column selection step S5 for selecting the data, and the analysis data collection column selection step S
Performing an electrical characteristic test of each semiconductor device in the column selected in step 5 and storing the obtained test result data in a data storage unit of the semiconductor test device together with the position coordinate information of the semiconductor device; S6, a measurement preparation step S7 for preparing in advance the characteristic measurement of the diffusion element in each semiconductor device, and the analysis data collection column selection step S
5. A measurement data collection step S8 of measuring the electrical characteristics of the diffusion elements in each semiconductor device in the column selected in 5 and storing the obtained measurement data in the data storage together with the position coordinate information of the semiconductor device. ing.

If the probe card for testing the electrical characteristics of the semiconductor device and the probe card for measuring the characteristics of the diffusion elements in the semiconductor device are different, the above-described test preparation step S1 is described in detail in FIG. As shown, a test jig mounting step S101 for mounting a measurement jig including a probe card for an electrical characteristic test of a semiconductor device on a probing apparatus, and a measured wafer loading step S102 for mounting a wafer on a probing apparatus. When,
A test program reading step S1 for supplying a test program for testing electrical characteristics of the semiconductor device to the tester unit
The measurement preparation step S7 includes, as shown in a detailed flow chart in FIG. 8, a measuring jig including a probe card for measuring the electric characteristics of the diffusion element in the semiconductor device, to the probing device. It comprises a measuring jig mounting step S701 to be mounted, and a measuring program reading step S702 for supplying a test program for measuring electric characteristics of the diffusion element to the tester unit.

If a common probe card capable of performing both the electrical characteristic test of the semiconductor device and the measurement of the electrical characteristics of the diffusion element in the semiconductor device can be applied, the test preparation step S1 is carried out in the probe preparation step S1. Is only used for testing the electrical characteristics of the semiconductor device, instead of the one that can also be used for measuring the electrical characteristics of the diffusion element. The detailed flow is as shown in FIG. As shown in a detailed flow chart in FIG. 9, the method includes only a measurement program reading step S712 for supplying a test program for measuring electric characteristics of the diffusion element in the semiconductor device to the tester unit.

Next, the operation of the semiconductor device test method according to the second embodiment of the present invention will be described with reference to the semiconductor test apparatus of FIG.

When conducting an electrical characteristic test of a semiconductor device arranged and formed in a matrix on a semiconductor wafer, first, in a test preparation step S1, a measuring jig 122 including a probe card corresponding to the semiconductor device to be tested is loaded. The wafer 123 to be measured is mounted on the probing device 121 of the semiconductor test device 100 and the probing device 12
1 and a test program 13 for testing the electrical characteristics of the semiconductor device in the test circuit unit 111 of the tester unit 110.
0 is read, and the test preparation is completed.

Next, in test execution step S2, as shown in detail in FIG.
The electrical characteristic test of each semiconductor device on the semiconductor device 23 is performed in order, and the good / bad judgment result data of each semiconductor device and the position coordinate information on the wafer 123 to be measured are paired and stored together in the data storage unit 112. The test of the wafer 123 is completed when the data of the good / bad judgment of all the semiconductor devices on the wafer 123 and the position coordinate information on the wafer 123 are stored in the data storage unit 112.

In the next yield judgment step S 3, it is determined whether the number of conforming products obtained from the wafer 123 to be measured which has completed the above-described test is equal to or greater than the yield reference number in the data stored in the data storage unit 112. The determination is made by the data processing unit 113 based on this. As a result, wafers having yields equal to or greater than the yield reference number are sent to the next assembly step according to a standard production procedure (not shown).

On the other hand, non-defective products exceeding the yield standard number cannot be obtained.
As for the wafer for which the failure analysis is determined to be necessary, in the analysis data sampling column extraction step S4, as shown in detail in FIG. 6, the semiconductor device on the wafer already stored in the data storage unit 112 X of the wafer based on the pass / fail judgment result data and position coordinate information
The number of non-defective products and the number of non-defective products in each of the columns in the axial direction and the Y-axis direction are totaled, and the ratio of the number of non-defective products to the number of defective products (the number of non-defective products / the number of defective products) is calculated for each column. A row in which the ratio between the number of non-defective products and the number of defective products is closest to p is extracted.

In the analysis data collection column selection step S5, as shown in detail in FIG. 7, the number of non-defective products and the number of defective products are determined for each column for all columns extracted in the analysis data collection column extraction step S4. The total value is calculated, and the column having the largest total value is selected as the analysis data collection column.

In the analysis data collection step S6, an electrical characteristic test is performed again on all the semiconductor devices in the column selected in the analysis data collection column selection step S5.
The electrical characteristic test result data is stored in the data storage unit 112 together with the position coordinate information of each semiconductor device.

Next, in the measurement preparation step S7, the measuring jig including the probe card is replaced from the one for testing the electrical characteristics of the semiconductor device to the one for measuring the characteristics of the diffusion element, and attached to the prober unit 120. Then, the test circuit unit 111 is caused to read the test program 130 for measuring the electrical characteristics of the diffusion element.

Thereafter, in a measurement data collection step S8,
The characteristic measurement is performed on the diffusion elements in all the semiconductor devices in the column selected in the above-described analysis data sampling column selection step S5, and the characteristic measurement result data of the diffusion element is stored together with the position coordinate information of the semiconductor device to be measured. Data storage unit 112
To be stored.

As a result of the above-described operation, in the semiconductor device test method according to the second embodiment of the present invention, as a result of the electrical characteristic test of the semiconductor device arranged and formed on the semiconductor wafer, the semiconductor device is obtained from the wafer. When the number of non-defective products was less than the yield standard number and a defect analysis of this wafer was required, the analysis data collection column included the most effective elements for defect analysis, where non-defective and defective products exist in a well-balanced manner. A column can be selected, and furthermore, a semiconductor test is performed so that data of the electrical characteristics of the semiconductor device and the electrical characteristics of the diffusion element in the semiconductor device are sampled for the selected column and stored together with the data sampling position coordinate information. By controlling the apparatus, the most effective data can be automatically obtained, and the cause of the failure can be quickly clarified and the number of steps required for the failure analysis can be reduced.

[0042]

As described above, according to the semiconductor test apparatus and the method for testing a semiconductor device of the present invention, the result of the electrical characteristic test of the semiconductor device arranged and formed on the semiconductor wafer is obtained from the wafer. When the number of non-defective products is less than the yield reference number and the failure analysis of this wafer is required, the position coordinate information of the semiconductor device on the wafer already stored in the data storage unit of the semiconductor test equipment and the electrical X based on the pass / fail judgment result data in the dynamic characteristic test
The number of non-defective products and the number of defective products are totaled for each column in each of the directions of the axis and the Y-axis, and the ratio of the number of non-defective products to the number of defective products (the number of non-defective products / the number of defective products) is calculated. By selecting the column with the largest sum of the number of non-defective products and the number of defective products among all the extracted columns, a defect analysis that has good-balanced non-defective and non-defective products as analysis data collection columns The column containing the most effective element can be selected, and data of the electrical characteristics of the semiconductor device and the electrical characteristics of the diffusion elements in the semiconductor device are collected for the selected column, and the data collection position coordinates By controlling the semiconductor test equipment so that it is stored in the data storage unit together with the information, the most effective data can be obtained automatically, and the effect of early elucidation of the cause of failure and reduction of the man-hour required for failure analysis can be realized. can get.

[Brief description of the drawings]

FIG. 1 is a block diagram illustrating a configuration of a semiconductor test apparatus according to the present invention.

FIG. 2 is a diagram for specifically explaining the content of an analysis data sampling column selection process in the semiconductor test apparatus of the present invention.

FIG. 3 is a flowchart showing a method for testing a semiconductor device according to the present invention.

FIG. 4 is a flowchart showing details of a test preparation step S1 in the semiconductor device test method of the present invention.

FIG. 5 is a flowchart showing details of a test execution step S2 in the semiconductor device test method of the present invention.

FIG. 6 is a flowchart showing details of an analysis data sampling column extraction step S4 in the semiconductor device test method of the present invention.

FIG. 7 is a flowchart showing details of an analysis data sampling column selection step S5 in the semiconductor device test method of the present invention.

FIG. 8 is a flowchart showing details of a measurement preparation step S7 in the semiconductor device test method of the present invention.

FIG. 9 is a diagram illustrating a method for testing a semiconductor device according to the present invention, in which a shared probe card that can perform both an electrical characteristic test of a semiconductor device and an electrical characteristic measurement of a diffusion element in the semiconductor device is applied. 5 is a flowchart showing details of a measurement preparation step S7.

FIG. 10 is a block diagram illustrating a configuration of a conventional semiconductor test apparatus.

FIG. 11 is a flowchart showing a conventional semiconductor device test method.

[Explanation of symbols]

 100, 300 Semiconductor test apparatus 110, 310 Tester section 111, 311 Test circuit section 112, 312 Data storage section 113, 313 Data processing section 114 Data determination section 115, 315 Data display section 120, 320 Prober section 121, 321 Probing apparatus 122 , 322 Measurement jig 123, 323 Measurement target wafer 130, 330 Test program 140 Probing device control signal

Claims (5)

(57) [Claims] 1. A semiconductor tester comprising a prober section and a tester section for performing an electrical characteristic test of a semiconductor device arranged and formed in a matrix on a semiconductor wafer,
The prober unit includes a probing device on which the wafer is loaded and a measuring jig including a probe card mounted on the probing device, and the tester unit has a coordinate position on the wafer selected by the tester unit. means for controlling the prober portion of the semiconductor device so as to probing, electrical characteristic test binding of said semiconductor device
Result data and position coordinate information means for storing together as a pair on the wafer, respectively the semiconductor device measurement result data of characteristic checking diffusion elements formed within the semiconductor device, all on the wafer The semiconductor device
At the end of the electrical characteristics test
Data processing unit for setting and collecting appropriate analysis data
Function to select the data collection column for analysis
It has a non-data determination unit, selected by the data determining section
It is possible to automatically measure an electrical characteristic test result data of the semiconductor device and a diffusion element characteristic for characteristic check in the semiconductor device in a one-to-one correspondence with respect to an analysis data collection column. Characteristic semiconductor test equipment. 2. A test circuit unit comprising a source system for supplying a predetermined voltage / current or the like to a measurement object, a matrix system for switching measurement terminals and a measurement system, a data storage unit , a data processing unit, and a data judging unit, the semiconductor test apparatus of claim 1 further comprising a data display unit. 3. A semiconductor device test method for performing an electrical characteristic test of semiconductor devices arranged and formed on a wafer in a matrix, wherein one direction of the matrix arrangement of the semiconductor devices on the wafer is an X-axis. Direction, when a direction perpendicular to the direction is the Y-axis direction, a test preparation step of preparing for the electrical characteristic test, and a test performing step of performing the electrical characteristic test using a semiconductor test device,
It is determined whether or not the number of non-defective semiconductor devices obtained from the wafer is equal to or larger than a predetermined yield reference number predetermined according to the size of the wafer or the type of the semiconductor device based on the result of the test execution step. A yield determination step, and when the number of conforming products obtained from the wafer in the yield determination step is less than the yield reference number and a failure analysis is required, all columns in the X-axis direction and the Y-axis direction are required. For each row, the number of non-defective products and the number of non-defective products are tabulated, and the ratio of the number of non-defective products to the number of non-defective products (the number of non-defective products / the number of defective products) is calculated for each of all the columns. An analysis data collection column extraction step of extracting a column closest to a predetermined value, and a total value of the number of non-defective products and the number of defective products (the number of non-defective products + defective products) for each column extracted in the analysis data collection column extraction step Number) and an analysis data collection column selection step of selecting a column having the largest total value, and test result data obtained by performing the electrical characteristic test on the column selected in the analysis data collection column selection step A data collection step for storing the data in the data storage unit together with the position coordinate information of the semiconductor device, a measurement preparation step for preparing the characteristic measurement of the diffusion element, and a column selected in the analysis data collection column selecting step. A measurement data collection step of storing data obtained by measuring the electrical characteristics of the diffusion element included in the semiconductor device with the semiconductor test device together with position coordinate information of the semiconductor device in the data storage unit; A method for testing a semiconductor device, comprising: 4. The test preparation step includes a prober unit and a table.
A test jig mounting step of mounting a measurement jig including a probe card for performing an electrical characteristic test of the semiconductor device on a probing device of a semiconductor test device having a star portion, and loading the wafer into the probing device. Wafer loading step, and a test program reading step of supplying a test program for testing the electrical characteristics of the semiconductor device to the tester unit, the measurement preparation step, the measurement jig including the probe card, Mounting a measuring jig to be mounted on the probing device;
4. The method for testing a semiconductor device according to claim 3, further comprising a measurement program reading step of supplying the test program for measuring the electrical characteristics to the tester unit. 5. A test preparation step, the prober unit and Te
A probing device of a semiconductor test device having a star portion is provided with a measuring jig including a common probe card capable of performing both an electrical characteristic test of the semiconductor device and an electrical characteristic measurement of a diffusion element in the semiconductor device. A test jig mounting step of mounting, a wafer loading step of loading the wafer into the probing apparatus, and a test program reading step of supplying a test program for the electrical characteristic test to the tester unit, 4. The semiconductor device test method according to claim 3, wherein the measurement preparation step includes a measurement program reading step of supplying the test program for measuring the electrical characteristics to the tester unit.