JP3128851B2 - Solid-state imaging device - Google Patents
Solid-state imaging deviceInfo
- Publication number
- JP3128851B2 JP3128851B2 JP03083132A JP8313291A JP3128851B2 JP 3128851 B2 JP3128851 B2 JP 3128851B2 JP 03083132 A JP03083132 A JP 03083132A JP 8313291 A JP8313291 A JP 8313291A JP 3128851 B2 JP3128851 B2 JP 3128851B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- solid
- imaging device
- state imaging
- reflection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、固体撮像素子、特に各
受光素子の有効感度領域外への入射を阻む遮光膜よりも
上層に該遮光膜に入射した光によるフレアを防止する反
射防止用染色層が形成された固体撮像素子に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state image pickup device, and more particularly, to an anti-reflection device for preventing flare caused by light incident on a light-shielding film above a light-shielding film which prevents the light-receiving device from entering the effective sensitivity region. The present invention relates to a solid-state imaging device having a dyed layer formed thereon.
【０００２】[0002]
【従来の技術】固体撮像素子においては、一般に、表面
に入射した光が有効感度領域以外の場所に入り込まない
ようにアルミニウムからなる遮光膜が設けられている。
更に、遮光膜よりも上層に遮光膜で反射された光を吸収
する反射防止用染色層も設けられている。該反射防止用
染色層は、光の反射率が高い遮光膜に入射した光が反射
されてフレアを生じるのを防止するために設けられる。2. Description of the Related Art In general, a solid-state imaging device is provided with a light-shielding film made of aluminum so that light incident on the surface does not enter a place other than the effective sensitivity region.
Further, an anti-reflection staining layer that absorbs light reflected by the light-shielding film is provided above the light-shielding film. The anti-reflection dye layer is provided to prevent light incident on the light-shielding film having a high light reflectance from being reflected and causing flare.
【０００３】図２及び図３は上述した遮光膜及び反射防
止用染色層を備えたタイプの固体撮像素子の各別の従来
例を示すものであり、各図の（Ａ）は固体撮像素子のセ
ンサー部の反射防止用染色層のパターンを示す平面図、
各図の（Ｂ）は一つの受光素子を拡大して示す平面図、
各図の（Ｃ）は（Ｂ）のＣ−Ｃ線視断面図、各図の
（Ｄ）は（Ｂ）のＤ−Ｄ線視断面図である。そして、図
２に示す固体撮像素子はオンチップレンズ素子が形成さ
れているのに対して図３に示す固体撮像素子は各受光素
子毎のオンチップレンズ素子が形成されておらず、両固
体撮像素子はその点で相違する点が、それ以外の点では
共通している。FIGS. 2 and 3 show another conventional example of a solid-state image pickup device having the above-mentioned light-shielding film and anti-reflection dyeing layer. FIG. Plan view showing a pattern of an anti-reflection staining layer of the sensor portion,
(B) of each figure is a plan view showing one light receiving element in an enlarged manner.
(C) of each drawing is a cross-sectional view taken along line CC of (B), and (D) of each drawing is a cross-sectional view taken along line DD of (B). The solid-state imaging device shown in FIG. 2 has an on-chip lens element, whereas the solid-state imaging device shown in FIG. 3 does not have an on-chip lens element for each light receiving element. The elements differ in that respect, but are otherwise common.
【０００４】図面において、１はｎ型半導体基板、２は
ｐ型ウエル、３はｎ- 型受光素子、４はｎ+ 型垂直転送
レジスタ、５はｐ+ 型チャンネルストッパ、６は多結晶
シリコンからなる転送電極、７はアルミニウムからなる
遮光膜、８は遮光膜７により囲繞された開口、９は例え
ばカゼイン（商品名）からなる黒色の反射防止用染色
層、１０は透明層、１１は該透明層１０からなるオンチ
ップレンズ素子であり、図４に示す固体撮像素子には存
在していない。そして、図２及び図３に示すように従来
の固体撮像素子の反射防止用染色層９、９、…は縦スト
ライプ状に形成されていた。In the drawing, 1 is an n-type semiconductor substrate, 2 is a p-type well, 3 is an n − -type light receiving element, 4 is an n + -type vertical transfer register, 5 is a p + -type channel stopper, and 6 is a polysilicon. Transfer electrode 7, a light-shielding film 7 made of aluminum, 8 an opening surrounded by the light-shielding film 7, 9 a black anti-reflection staining layer made of, for example, casein (trade name), 10 a transparent layer, and 11 a transparent layer. This is an on-chip lens element composed of the layer 10, and does not exist in the solid-state imaging device shown in FIG. Then, as shown in FIGS. 2 and 3, the antireflection staining layers 9, 9,... Of the conventional solid-state imaging device are formed in a vertical stripe shape.
【０００５】[0005]
【発明が解決しようとする課題】ところで、従来の固体
撮像素子は、反射防止用染色層９、９、…が縦ストライ
プ状に形成されているので、左右に隣接し合う画素間の
遮光膜によって反射される光によるフレアは防止するこ
とができるけれども、上下に隣接し合う画素間の遮光膜
によって反射される光によるフレアは防止することがで
きなかった。従って反射防止用染色層９、９、…による
フレア防止効果は必ずしも充分ではなかった。また、図
２に示すようなオンチップレンズ素子１１をもった高感
度の固体撮像素子においては反射防止用染色層９、９、
…が画素の左右にのみ存在し、上下に存在しないため縦
方向と横方向とでレンズ素子の断面形状が異なり、入射
光を正しく遮光膜７の開口８に集光することのできる形
状にすることが難しかった。これは、オンチップレンズ
素子１１、１１、…を形成した高感度の固体撮像素子に
おいては、反射防止用染色層９がオンチップレンズ素子
１１、１１、…の台座としての役割も果し、平面形状が
矩形の各オンチップレンズ素子１１を左右二方から支え
るが、しかし上下二方においては支えることができず、
それがレンズ素子の形状をいびつにする要因となり良好
な集光特性が得られなかったともいえる。In the conventional solid-state imaging device, the anti-reflection staining layers 9, 9,... Are formed in the form of vertical stripes. Although flare due to reflected light can be prevented, flare due to light reflected by a light-shielding film between vertically adjacent pixels could not be prevented. Therefore, the anti-flare effect by the anti-reflection dye layers 9, 9,... Was not always sufficient. In a high-sensitivity solid-state imaging device having an on-chip lens element 11 as shown in FIG.
.. Exist only on the left and right sides of the pixel, and do not exist above and below the pixel, so that the cross-sectional shape of the lens element differs between the vertical direction and the horizontal direction, so that the incident light can be correctly focused on the opening 8 of the light shielding film 7 It was difficult. This is because, in a high-sensitivity solid-state imaging device in which the on-chip lens elements 11, 11,... Are formed, the antireflection staining layer 9 also serves as a base for the on-chip lens elements 11, 11,. Each on-chip lens element 11 having a rectangular shape is supported from two sides, but cannot be supported on two sides.
It can be said that this causes the shape of the lens element to be distorted, and good light-collecting characteristics cannot be obtained.
【０００６】本発明はこのような問題点を解決すべく為
されたものであり、遮光膜で反射した光によるフレアを
より有効に防止し、また、オンチップレンズ素子のある
固体撮像素子のそのオンチップレンズ素子の形状を制御
し易くし、より集光特性を高めることができるようにす
ることを目的とする。SUMMARY OF THE INVENTION The present invention has been made to solve such a problem, and more effectively prevents flare caused by light reflected by a light-shielding film. Further, the present invention relates to a solid-state imaging device having an on-chip lens element. It is an object of the present invention to make it easier to control the shape of an on-chip lens element and to further improve light-collecting characteristics.
【０００７】[0007]
【課題を解決するための手段】本発明固体撮像素子は、
反射防止用染色層が上から視て各受光素子と対応した部
分が開口する格子状に形成され、上記反射防止用染色層
より上に、上記各開口と対応してオンチップレンズ素子
がその縁部が上記格子状の反射防止用染色層の上に形成
されたことを特徴とする。According to the present invention, there is provided a solid-state imaging device comprising:
The anti-reflection staining layer is formed in a lattice shape with an opening at a portion corresponding to each light receiving element when viewed from above, and above the anti-reflection staining layer, an on-chip lens element corresponding to each of the openings has an edge. The portion is formed on the lattice-like anti-reflection staining layer.
【０００８】[0008]
【実施例】以下、本発明固体撮像素子を図示実施例に従
って詳細に説明する。図１は本発明固体撮像素子の各別
の実施例を示すものであり、同図（Ａ）は固体撮像素子
のセンター部の反射防止用染色層のパターンを示す平面
図、（Ｂ）は一つの受光素子を拡大して示す平面図、
（Ｃ）は（Ｂ）のＣ−Ｃ線視断面図、（Ｄ）は（Ｂ）の
Ｄ−Ｄ線視断面図である。そして、図１に示す固体撮像
素子はオンチップレンズ素子が形成されているのに対し
て図２に示す固体撮像素子は各受光素子毎にオンチップ
レンズ素子が形成されておらず、両固体撮像素子はその
点で相違する点が、それ以外の点では共通している。ま
た、図１に示す固体撮像素子は、反射防止用染色層９が
上から視て格子状に形成されており、そして、その格子
状の反射防止用染色層９の各開口に対応してオンチップ
レンズ素子が設けられている点で図２及び図３に示す固
体撮像素子とは異なっているが、それ以外の点では共通
しており、共通している点については既に説明済みであ
るので図２、図３で用いたのと同じ符号を付して図示す
るに留めて説明を省略し、相違する点についてのみ説明
する。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1A and 1B show another embodiment of the solid-state imaging device of the present invention. FIG. 1A is a plan view showing a pattern of an anti-reflection staining layer at the center of the solid-state imaging device, and FIG. Plan view showing two light receiving elements in an enlarged scale,
(C) is a sectional view taken along line CC of (B), and (D) is a sectional view taken along line DD of (B). The solid-state imaging device shown in FIG. 1 has an on-chip lens element formed therein, whereas the solid-state imaging device shown in FIG. 2 does not have an on-chip lens element formed for each light receiving element. The elements differ in that respect, but are otherwise common. In the solid-state imaging device shown in FIG. 1, the anti-reflection staining layer 9 is formed in a lattice shape when viewed from above, and is turned on corresponding to each opening of the lattice-like anti-reflection staining layer 9. Although the solid-state imaging device shown in FIGS. 2 and 3 is different from the solid-state imaging device in that a chip lens element is provided, it is common in other points, and the common points have already been described. 2 and 3 are denoted by the same reference numerals as in FIGS. 2 and 3, description thereof will be omitted, and only different points will be described.
【０００９】図１に示すように、本発明固体撮像素子
は、反射防止用染色層９の上から視た形状が格子状にさ
れ、反射防止用染色層９による開口１２、１２、…が各
受光素子３、３、…上方に位置せしめられている。即
ち、反射防止用染色層９が従来のように縦方向に走って
いるのみならず、横方向にも走るように形成されている
のである。As shown in FIG. 1, in the solid-state imaging device of the present invention, the shape of the anti-reflection staining layer 9 as viewed from above is formed in a lattice shape, and the openings 12, 12,. The light receiving elements 3, 3,... Are located above. That is, the antireflection dyeing layer 9 is formed so as to run not only in the vertical direction as in the conventional case but also in the horizontal direction.
【００１０】従って、本発明固体撮像素子によれば、従
来のように左右に隣接し合う画素間の遮光膜によって反
射される光によるフレアは防止することができるだけで
なく、上下に隣接し合う画素間の遮光膜によって反射さ
れる光によるフレアは防止することができる。従って、
反射防止用染色層９により従来よりも有効にフレアを防
止できる。Therefore, according to the solid-state image pickup device of the present invention, it is possible not only to prevent the flare caused by the light reflected by the light-shielding film between the left and right adjacent pixels, but also to prevent the vertically adjacent pixels from being present. Flare due to light reflected by the intervening light-shielding film can be prevented. Therefore,
The antireflection dyeing layer 9 can prevent flare more effectively than before.
【００１１】そして、図１に示すように、上記格子状の
反射防止用染色層９より上に、該反射防止用染色層９の
各開口１２に対応してオンチップレンズ素子１１、１
１、…が、その縁部が該格子状の反射防止用染色層の上
に位置するように形成されている。このようにオンチッ
プレンズ素子１１、１１、…を形成した高感度の固体撮
像素子においては、反射防止用染色層９がオンチップレ
ンズ素子１１、１１、…の台座としての役割も果し、平
面形状が矩形の各オンチップレンズ素子１１を四方から
支える。従って、各オンチップレンズ素子１１の形状を
整え易く、入射光の遮光膜７の開口８への集光性を向上
させることができる。従って、固体撮像素子の感度を高
めることができ、更にはより一層のフレアの低減に寄与
する。なぜフレアが低減するかといえば、入遮光の開口
８への集光性の向上によって遮光膜７に当る光が少なく
なるのでその分遮光膜７の反射光によるフレアが少なく
なるからである。As shown in FIG. 1, the on-chip lens elements 11 and 1 correspond to the openings 12 of the anti-reflection staining layer 9 above the lattice-shaped anti-reflection staining layer 9.
Are formed such that their edges are located on the lattice-shaped antireflection dyeing layer. In the high-sensitivity solid-state imaging device having the on-chip lens elements 11, 11,... Thus formed, the antireflection staining layer 9 also serves as a base for the on-chip lens elements 11, 11,. Each on-chip lens element 11 having a rectangular shape is supported from all sides. Therefore, the shape of each on-chip lens element 11 can be easily adjusted, and the ability of the incident light to converge on the opening 8 of the light shielding film 7 can be improved. Therefore, the sensitivity of the solid-state imaging device can be increased, and further contributes to further reduction of flare. The reason why the flare is reduced is that the light incident on the light-shielding film 7 is reduced due to the improvement of the light-collecting property to the light-shielding opening 8, and the flare due to the reflected light of the light-shielding film 7 is accordingly reduced.
【００１２】[0012]
【発明の効果】請求項１の固体撮像素子は、各受光素子
の有効感度領域外への入射を阻む遮光膜よりも上層に、
該遮光膜に入射した光によるフレアを防止する反射防止
用染色層が形成された固体撮像素子において、上記反射
防止用染色層が上から視て各受光素子と対応した部分が
開口する格子状に形成され、上記反射防止用染色層より
上に、上記各開口と対応するオンチップレンズ素子が、
その縁が該格子状の上記反射防止用染色層の上方に位置
するように形成されてなることを特徴とする。従って、
請求項１の固体撮像素子によれば、反射防止用染色層が
格子状に形成されているので、左右に隣接し合う画素間
の遮光膜によって反射される光によるフレアは防止する
ことができるだけでなく、上下に隣接し合う画素間の遮
光膜によって反射される光によるフレアも防止すること
ができる。依って、反射防止用染色層により有効に遮光
膜の反射光を吸収してフレアを防止することができる。
そして、上から視て格子状の反射防止用染色層の各開口
部上に受光素子へ光を集光するオンチップレンズ素子
が、その縁部が上記格子状の反射防止用染色層の上方に
位置するように形成されているので、オンチップレンズ
素子形成部の四方に反射防止用染色層が存在する形状に
なり、縦方向と横方向の断面形状が略同じになり、ま
た、オンチップレンズ素子形成部を四方から支えること
ができる。依って、各オンチップレンズ素子の形状を整
え易く、入射した光を遮光膜の開口に導光できるように
することができ、より感度を高め、更にはよりフレアを
少なくできる。According to the first aspect of the present invention, there is provided a solid-state imaging device, which is provided above a light-shielding film for preventing the light-receiving elements from entering outside the effective sensitivity region.
In a solid-state imaging device having an anti-reflection stain layer for preventing flare caused by light incident on the light-shielding film, the anti-reflection stain layer has a lattice shape in which a portion corresponding to each light-receiving element is open when viewed from above. Formed, above the anti-reflection staining layer, the on-chip lens element corresponding to each of the openings,
The edge is formed so as to be located above the lattice-like anti-reflection staining layer. Therefore,
According to the solid-state imaging device of the first aspect, since the antireflection staining layer is formed in a lattice shape, it is only possible to prevent the flare caused by the light reflected by the light-shielding film between the right and left adjacent pixels. In addition, flare due to light reflected by a light-shielding film between vertically adjacent pixels can be prevented. Accordingly, flare can be prevented by effectively absorbing the reflected light of the light-shielding film by the antireflection stain layer.
Then, an on-chip lens element for condensing light on the light receiving element is formed on each opening of the lattice-shaped antireflection staining layer when viewed from above, and its edge is located above the lattice-shaped antireflection staining layer. Since it is formed so as to be located, the anti-reflection stained layer is present on all sides of the on-chip lens element forming portion, the cross-sectional shape in the vertical direction and the horizontal direction is substantially the same, and the on-chip lens The element formation portion can be supported from all sides. Therefore, the shape of each on-chip lens element can be easily adjusted, and the incident light can be guided to the opening of the light-shielding film, so that the sensitivity can be further increased and the flare can be further reduced.
【図１】（Ａ）乃至（Ｄ）は本発明固体撮像素子の一つ
の実施例を示すもので、（Ａ）は固体撮像素子のセンタ
ー部反射防止用染色層のパターンを示す平面図、（Ｂ）
は一つの受光素子を拡大して示す平面図、（Ｃ）は
（Ｂ）のＣ−Ｃ線視断面図、（Ｄ）は（Ｂ）のＤ−Ｄ線
視断面図である。FIGS. 1A to 1D show one embodiment of a solid-state imaging device according to the present invention, in which FIG. 1A is a plan view showing a pattern of an antireflection staining layer in a center portion of the solid-state imaging device; B)
FIG. 4 is an enlarged plan view showing one light receiving element, FIG. 4C is a sectional view taken along line CC of FIG. 4B, and FIG. 4D is a sectional view taken along line DD of FIG.
【図２】（Ａ）乃至（Ｄ）は一つの従来例を示すもの
で、（Ａ）は固体撮像素子のセンター部反射防止用染色
層のパターンを示す平面図、（Ｂ）は一つの受光素子を
拡大して示す平面図、（Ｃ）は（Ｂ）のＣ−Ｃ線視断面
図、（Ｄ）は（Ｂ）のＤ−Ｄ線視断面図である。2 (A) to 2 (D) show one conventional example, FIG. 2 (A) is a plan view showing a pattern of an antireflection staining layer at the center of a solid-state imaging device, and FIG. FIG. 4 is an enlarged plan view showing the element, FIG. 4C is a sectional view taken along line CC of FIG. 4B, and FIG. 4D is a sectional view taken along line DD of FIG.
【図３】（Ａ）乃至（Ｄ）は他の従来例を示すもので、
（Ａ）は固体撮像素子のセンター部反射防止用染色層の
パターンを示す平面図、（Ｂ）は一つの受光素子を拡大
して示す平面図、（Ｃ）は（Ｂ）のＣ−Ｃ線視断面図、
（Ｄ）は（Ｂ）のＤ−Ｄ線視断面図である。FIGS. 3A to 3D show another conventional example.
(A) is a plan view showing a pattern of the antireflection staining layer at the center of the solid-state imaging device, (B) is a plan view showing one light-receiving element in an enlarged manner, and (C) is a CC line of (B). Sectional view,
(D) is a sectional view taken along line DD of (B).
３ 受光素子 ７ 遮光膜 ８ 遮光膜の開口 ９ 反射防止用染色層 １１ オンチップレンズ素子 １２ 反射防止用染色層の開口 Reference Signs List 3 light-receiving element 7 light-shielding film 8 opening of light-shielding film 9 anti-reflection staining layer 11 on-chip lens element 12 opening of anti-reflection staining layer
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 27/14 H04N 5/335 ──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. 7 , DB name) H01L 27/14 H04N 5/335
Claims (1)
阻む遮光膜よりも上層に、該遮光膜に入射した光による
フレアを防止する反射防止用染色層が形成された固体撮
像素子において、 上記反射防止用染色層が上から視て各受光素子と対応し
た部分が開口する格子状に形成され、 上記反射防止用染色層より上に、上記各開口と対応する
オンチップレンズ素子が、その縁が該格子状の上記反射
防止用染色層の上方に位置するように形成され てなるこ
とを特徴とする固体撮像素子1. A solid-state imaging device in which an anti-reflection staining layer for preventing flare caused by light incident on the light-shielding film is formed above a light-shielding film that prevents light from entering the effective sensitivity region of each light-receiving element. the antireflection staining layer corresponding to each light-receiving element as viewed from the top portion is formed in a lattice shape opening, above the above antireflection dyed layer corresponding with the respective openings
The on-chip lens element has the edge of the reflection
A solid-state imaging device formed so as to be located above a prevention staining layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP03083132A JP3128851B2 (en) | 1991-03-23 | 1991-03-23 | Solid-state imaging device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP03083132A JP3128851B2 (en) | 1991-03-23 | 1991-03-23 | Solid-state imaging device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04294583A JPH04294583A (en) | 1992-10-19 |
| JP3128851B2 true JP3128851B2 (en) | 2001-01-29 |
Family
ID=13793674
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP03083132A Expired - Lifetime JP3128851B2 (en) | 1991-03-23 | 1991-03-23 | Solid-state imaging device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3128851B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8480838B2 (en) | 2002-04-03 | 2013-07-09 | 3M Innovative Properties Company | Lamination apparatus and methods |
-
1991
- 1991-03-23 JP JP03083132A patent/JP3128851B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8480838B2 (en) | 2002-04-03 | 2013-07-09 | 3M Innovative Properties Company | Lamination apparatus and methods |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04294583A (en) | 1992-10-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102396066B (en) | Solid-state image sensing apparatus | |
| US5514888A (en) | On-chip screen type solid state image sensor and manufacturing method thereof | |
| US20050121737A1 (en) | Colors only process to reduce package yield loss | |
| JP2000164839A (en) | Solid camera device | |
| JP2558389B2 (en) | Solid-state imaging device | |
| JP3128851B2 (en) | Solid-state imaging device | |
| JP2910161B2 (en) | Solid-state imaging device | |
| JP3715353B2 (en) | Solid-state image sensor | |
| JPH04343470A (en) | Solid-state image pickup device | |
| JPH03276677A (en) | Solid-state image sensing element | |
| JP3138502B2 (en) | Solid-state imaging device | |
| JPH05175471A (en) | Solid-state image sensing device | |
| JPH0682813B2 (en) | Method for manufacturing infrared detection solid-state imaging device | |
| JPS61154283A (en) | Solid image pick-up element | |
| JPH06120466A (en) | Solid-state image sensing element | |
| JP2956115B2 (en) | Solid-state imaging device | |
| JPS6173369A (en) | Infrared detecting element | |
| JPS5836078A (en) | Solid-state image pickup device | |
| JP2002184966A (en) | Solid state image sensor | |
| JP3191967B2 (en) | Solid-state imaging device | |
| JPH021976A (en) | Color solid-state image sensor | |
| JPH026273B2 (en) | ||
| JPH04364071A (en) | Solid-state image pick up device | |
| JPH1022484A (en) | Solid image pick-up device and formation of its lens element | |
| JPS63226959A (en) | Solid-state image sensing device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20071117 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20081117 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20091117 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20091117 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20101117 Year of fee payment: 10 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111117 Year of fee payment: 11 |
|
| EXPY | Cancellation because of completion of term | ||
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111117 Year of fee payment: 11 |