JP3112575B2 - Power converter - Google Patents
Power converterInfo
- Publication number
- JP3112575B2 JP3112575B2 JP04246071A JP24607192A JP3112575B2 JP 3112575 B2 JP3112575 B2 JP 3112575B2 JP 04246071 A JP04246071 A JP 04246071A JP 24607192 A JP24607192 A JP 24607192A JP 3112575 B2 JP3112575 B2 JP 3112575B2
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- Japan
- Prior art keywords
- capacitor
- diode
- circuit
- self
- power
- Prior art date
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- Expired - Lifetime
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Description
【０００１】[0001]
【産業上の利用分野】本発明は、アノ―ドリアククトル
のエネルギの一部を回生する電力変換装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a power converter for regenerating a part of energy of an anodic reactor.
【０００２】[0002]
【従来の技術】図７は、従来の電力変換装置の構成図で
あり、アノ―ドリアクトル１１（以後単に（ＡＬ11と記
す）の片端子はＰ側（正極）直流端子３１に接続されて
いる。また、この端子はコンデンサ１３、回生回路２２
の一端に接続されている。ＡＬ11の他端は自己消弧形半
導体電力素子１a のアノ―ドに接続されている。また、
この端子は、ダイオ―ド１２のアノ―ドに接続されてい
る。自己消弧形半導体電力素子１a には、ダイオ―ド２
a が逆並列に接続されている。自己消弧形半導体電力素
子１a には、更にスナバ回路３a が並列に接続されてい
る。自己消弧形半導体電力素子１a のカソ―ドは、出力
端子３３、及び自己消弧形半導体電力素子１b のアノ―
ドに接続されている。自己消弧形半導体電力素子１b に
も、１a と同様に、ダイオ―ド２b が逆並列に接続され
ており、また、スナバ回路３b が並列に接続されてい
る。自己消弧形半導体電力素子１b のカソ―ドは、Ｎ極
（負極）直流端子３２に接続されている。ダイオ―ド１
２のカソ―ドは、コンデンサ１３の他端、及び回生回路
２２の＋端子に接続されている。回生回路２２の交流出
力は連系トランス２３を介して交流電源２４に接続され
ている。本実施例は、回生回路にＤＣ―ＡＣ変換器を用
いて、交流電源へ回生を行った実施例である。2. Description of the Related Art FIG. 7 is a block diagram of a conventional power converter. One terminal of an anode reactor 11 (hereinafter simply referred to as (AL11)) is connected to a P-side (positive) DC terminal 31. This terminal is connected to the capacitor 13 and the regenerative circuit 22.
Is connected to one end. The other end of AL11 is connected to the anode of the self-extinguishing semiconductor power device 1a. Also,
This terminal is connected to the anode of the diode 12. Diode 2 is connected to self-extinguishing type semiconductor power element 1a.
a is connected in anti-parallel. The self-extinguishing type semiconductor power element 1a is further connected with a snubber circuit 3a in parallel. The cathode of the self-extinguishing type semiconductor power device 1a is connected to the output terminal 33 and the anode of the self-extinguishing type semiconductor power device 1b.
Connected to the The diode 2b is also connected in anti-parallel to the self-extinguishing semiconductor power element 1b, similarly to 1a, and the snubber circuit 3b is connected in parallel. The cathode of the self-extinguishing type semiconductor power element 1b is connected to an N-pole (negative electrode) DC terminal 32. Diode 1
The second cathode is connected to the other end of the capacitor 13 and the + terminal of the regenerative circuit 22. The AC output of the regenerative circuit 22 is connected to an AC power supply 24 via an interconnection transformer 23. This embodiment is an embodiment in which a DC-AC converter is used for a regenerative circuit to regenerate an AC power supply.
【０００３】図７において、自己消弧形半導体電力素子
１a 、１b 及びダイオ―ド２a 、２b のタ―ンオフ時、
ＡＬ11の蓄積エネルギの一部が、ダイオ―ド１２を介し
てコンデンサ１３に流入する。このエネルギは更に、回
生回路２２へと転送され、連系トランス２３を介して交
流電源２４へ回生される。回生回路２２が動作している
ときは、コンデンサ１３の直流電圧は、ほぼ一定に制御
され、ＡＬ11の蓄積エネルギは交流電源２４へ回生され
る。In FIG. 7, when the self-extinguishing semiconductor power devices 1a and 1b and the diodes 2a and 2b are turned off,
Part of the stored energy of AL11 flows into capacitor 13 via diode 12. This energy is further transferred to the regenerative circuit 22 and is regenerated to the AC power supply 24 via the interconnection transformer 23. When the regenerative circuit 22 is operating, the DC voltage of the capacitor 13 is controlled to be substantially constant, and the energy stored in AL11 is regenerated to the AC power supply 24.
【０００４】図８は、回生回路２２の一構成例である。
電圧検出器７１a 、７１b は、＋入力端子、−入力端子
間に接続されている。＋入力端子、−入力端子間には、
コンデンサ２１が接続されている。＋入力端子にはま
た、自己消弧形電力半導体素子７２a 、７２c 、７２e
のコレクタが接続されている。自己消弧形電力半導体素
子７２a 、７２c 、７２e のエミッタは、自己消弧形電
力半導体素子７２b 、７２d 、７２f のコレクタに各々
接続されている。自己消弧形電力半導体素子７２b 、７
２d 、７２f のエミッタは、−入力端子及び電圧検出器
７１b に接続されている。電圧検出器７１a 、７１b の
出力は、制御回路７４に入力されている。制御回路７４
の出力は、ゲ―ト信号７５a 、７５b 、７５c 、７５d
、７５e 、７５f として、ゲ―ト回路７３a 、７３b
、７３c 、７３d 、７３e 、７３f に接続されてい
る。ゲ―ト回路７３a 、７３b 、７３c 、７３d 、７３
e 、７３fの出力は、自己消弧形電力半導体素子７２a
、７２b 、７２c 、７２d 、７２e、７２f に各々接続
されている。（図９では、ゲ―ト回路７３b 〜７３f 及
びゲ―ト信号７５b 〜７５f は省略してある。）回生イ
ンバ―タ２２は、図７に示す極性でコンデンサ２１と並
列に接続されている。FIG. 8 shows an example of the configuration of a regenerative circuit 22.
The voltage detectors 71a and 71b are connected between the + input terminal and the-input terminal. Between the + input terminal and the-input terminal,
The capacitor 21 is connected. The + input terminal is also connected to the self-extinguishing type power semiconductor elements 72a, 72c, 72e.
The collector is connected. The emitters of the self-extinguishing power semiconductor devices 72a, 72c, 72e are connected to the collectors of the self-extinguishing power semiconductor devices 72b, 72d, 72f, respectively. Self-extinguishing type power semiconductor elements 72b, 7
The emitters of 2d and 72f are connected to the-input terminal and the voltage detector 71b. Outputs of the voltage detectors 71a and 71b are input to a control circuit 74. Control circuit 74
Outputs the gate signals 75a, 75b, 75c, 75d
, 75e, 75f as gate circuits 73a, 73b
, 73c, 73d, 73e, 73f. Gate circuits 73a, 73b, 73c, 73d, 73
The outputs of e and 73f are self-extinguishing power semiconductor elements 72a
, 72b, 72c, 72d, 72e, 72f. (In FIG. 9, the gate circuits 73b to 73f and the gate signals 75b to 75f are omitted.) The regenerative inverter 22 is connected in parallel with the capacitor 21 with the polarity shown in FIG.
【０００５】図９は回生回路２２の他の構成例である。
本回路は、回生回路として、ＤＣ―ＤＣ変換器を構成
し、直流電源に回生する場合の一構成例である。コンデ
ンサ２１、自己消弧形電力半導体素子９１a 〜９１d 、
及び絶縁トランス９２の一次側巻線より構成される入力
側直流回路と、絶縁トランス９２の二次側巻線、ダイオ
―ド９３a 〜９３d 、及び直流電源９４より構成される
出力側直流回路は、絶縁トランス９２により絶縁されて
いる。直流電源としては、任意の電源を選択可能であ
り、例えば電力変換装置の直流側とすることも可能であ
る。FIG. 9 shows another example of the configuration of the regenerative circuit 22.
This circuit is an example of a configuration in which a DC-DC converter is configured as a regenerative circuit and regenerated to a DC power supply. Capacitor 21, self-extinguishing type power semiconductor elements 91a to 91d,
An input-side DC circuit composed of the primary winding of the insulation transformer 92 and an output DC circuit composed of the secondary winding of the insulation transformer 92, the diodes 93a to 93d, and the DC power supply 94 are: It is insulated by an insulating transformer 92. As the DC power supply, an arbitrary power supply can be selected, and for example, the DC power supply can be on the DC side.
【０００６】[0006]
【発明が解決しようとする課題】以上のような従来の電
力変換装置では、以下のような欠点があった。The above conventional power converter has the following drawbacks.
【０００７】回生回路２２内部のコンデンサ２１と、外
部のコンデンサ１３と、その間の配線のインダクタンス
で共振回路が構成されて高周波電流により回路動作が不
安定になったり、ブス、回路構成部品の高周波過熱を起
すなどの問題があった。通常、回生回路２２は、ＡＬ1
1、コンデンサ１３等からは例えば数ｍ以上離れた位置
に設置されることもあり、コンデンサ１３とコンデンサ
２１間の配線長が長くなると、インダンタンスが大きく
なり、振動現象は、顕著となる。A resonance circuit is formed by the capacitor 21 inside the regenerative circuit 22, the external capacitor 13, and the wiring inductance therebetween, and the circuit operation becomes unstable due to the high-frequency current, and the bus and the high-frequency overheating of the circuit components. And other problems. Normally, the regenerative circuit 22
1. The capacitor 13 may be installed at a position distant from the capacitor 13 by, for example, several meters or more. When the wiring length between the capacitor 13 and the capacitor 21 is increased, the inductance increases, and the vibration phenomenon becomes remarkable.
【０００８】本発明は、上記の欠点を除去するためにな
されたものであって、高周波共振現象を抑制し、ブス、
回路構成用品の高周波過熱を防止した電力変換装置を提
供することを目的とする。SUMMARY OF THE INVENTION The present invention has been made to eliminate the above-mentioned drawbacks, and is intended to suppress a high-frequency resonance phenomenon,
An object of the present invention is to provide a power converter that prevents high frequency overheating of circuit components.
【０００９】[0009]
【課題を解決するための手段】本発明は、上記目的を達
成するために、コンデンサ１３とダイオ―ド１２の接続
点と、回生回路２２との間に接続された第２のダイオ―
ドと、コンデンサ１３と並列に接続された放電抵抗と自
己消弧形電力半導体素子の直列回路、及び前記第２のダ
イオ―ドに並列に接続された抵抗より構成される。According to the present invention, in order to achieve the above object, a second diode connected between a connection point between a capacitor 13 and a diode 12 and a regenerative circuit 22 is provided.
And a series circuit of a discharge resistor and a self-extinguishing power semiconductor element connected in parallel with the capacitor 13 and a resistor connected in parallel with the second diode.
【００１０】[0010]
【作用】第２のダイオ―ドにより、回生回路２２内部の
コンデンサ２１から、コンデンサ１３へエネルギの逆流
を防止し共振現象を防止する。The second diode prevents reverse flow of energy from the capacitor 21 inside the regenerative circuit 22 to the capacitor 13, thereby preventing a resonance phenomenon.
【００１１】又、抵抗及び自己消弧形電力半導体素子に
より、回生回路停止時は、コンデンサ１３に蓄積される
エネルギを消費する機能を有し、また、第２のダイオ―
ドに並列に接続された抵抗により、回生回路２２内部の
コンデンサ２１の電圧が過電圧となることを防止する。The resistor and the self-extinguishing power semiconductor element have a function of consuming the energy stored in the capacitor 13 when the regenerative circuit is stopped.
The resistor connected in parallel with the resistor prevents the voltage of the capacitor 21 inside the regenerative circuit 22 from becoming excessive.
【００１２】[0012]
【実施例】以下、本発明の実施例を図１を参照して説明
する。図１は本発明の一実施例を示す構成図である。An embodiment of the present invention will be described below with reference to FIG. FIG. 1 is a configuration diagram showing one embodiment of the present invention.
【００１３】ダイオ―ド１２とコンデンサ１３の接続点
に、第２のダイオ―ド１５のアノ―ドが接続されてい
る。ダイオ―ド１５のカソ―ドは、回生回路２２の＋端
子の間に接続されている。上記以外の構成は、図７と同
様であるのでその説明は省略する。An anode of a second diode 15 is connected to a connection point between the diode 12 and the capacitor 13. The cathode of the diode 15 is connected between the + terminals of the regenerative circuit 22. The configuration other than the above is the same as that of FIG. 7, and the description thereof is omitted.
【００１４】図１において、コンデンサ１３に蓄積され
たエネルギが第２のダイオ―ド１５を介して、回生回路
２２へ流入する。この時、コンデンサ１３、配線インダ
クタンス、回生回路２２内のコンデンサ２１により、共
振回路が構成され、電流は、振動波形となるが、この振
動は、ダイオ―ド１５により阻止され、コンデンサ２１
からコンデンサ１３への逆流はなく、従って、振動は半
波で終了する。In FIG. 1, the energy stored in the capacitor 13 flows into the regenerative circuit 22 via the second diode 15. At this time, a resonance circuit is formed by the capacitor 13, the wiring inductance, and the capacitor 21 in the regenerative circuit 22, and the current has an oscillating waveform, but this oscillation is blocked by the diode 15 and
There is no backflow from to the capacitor 13 and therefore the oscillation ends with a half wave.
【００１５】図２は本発明の他の実施例を示す構成図
で、Ｐ側（正極）直流入力に接続された複数のリアクト
ル１１a 、１１b からのエネルギを１台の回生回路２２
により回生している。回生回路２２へは、ダイオ―ド１
５a 、１５b により、並列に接続されている。本実施例
では、自己消弧形電力半導体素子１a 、１b は、各々独
立したタイミングでスイッチングを行う。本発明を用い
ることで、共振電流が抑制されているため、本実施例の
ような場合でも、高周波共振現象は抑制される。FIG. 2 is a block diagram showing another embodiment of the present invention, in which energy from a plurality of reactors 11a and 11b connected to a P-side (positive) DC input is supplied to one regenerative circuit 22.
It is regenerated by. Diode 1 is connected to the regenerative circuit 22.
5a and 15b are connected in parallel. In this embodiment, the self-extinguishing power semiconductor devices 1a and 1b perform switching at independent timings. Since the resonance current is suppressed by using the present invention, the high-frequency resonance phenomenon is suppressed even in the case of the present embodiment.
【００１６】図３は、本発明の他の実施例を示す構成図
で、第２のダイオ―ド１５に並列に抵抗１４が接続され
ている。コンデンサ１３と並列に抵抗１６、自己消弧形
半導体電力素子１７の直列回路が接続されている。上記
以外の構成は図１と同じ構成であるのでその説明は省略
する。図３において、回生回路２２が動作しているとき
は、図１と同じように動作するのでその説明は省略し、
回生回路２２が停止した時の動作を説明する。FIG. 3 is a block diagram showing another embodiment of the present invention. A resistor 14 is connected in parallel to a second diode 15. A series circuit of a resistor 16 and a self-extinguishing semiconductor power element 17 is connected in parallel with the capacitor 13. The configuration other than the above is the same as that of FIG. In FIG. 3, when the regenerative circuit 22 is operating, it operates in the same manner as in FIG.
The operation when the regenerative circuit 22 stops will be described.
【００１７】コンデンサ１３に蓄積されたエネルギによ
り、コンデンサ１３の電圧が上昇する。コンデンサ１３
の電圧が予め設定してある上限レベルを超えると、自己
消弧形半導体電力素子１７がオンして放電用抵抗１６に
より、コンデンサ１３のエネルギが消費放電される。コ
ンデンサ１３の電圧が予め設定してある下限レベル以下
に下がると自己消弧形半導体電力素子１７は、オフし再
びコンンデンサ１３の電圧は上昇を始める。以上の様
な、ヒステリスシコンパレ―タ動作で、コンデンサ１３
の電圧は一定範囲内に制御される。この時、実際には、
ＡＬ11とＰ側（正極）直流端子間の配線インダクタンス
が存在するので、この蓄積エネルギと第１のダイオ―ド
の関係で回生回路内のコンデンサ２１の電圧が上昇して
しまうのを防ぐために、抵抗１４により、コンデンサ２
１のエネルギをコンデンサ１３へ流入させ、抵抗１６で
消費する。抵抗１６で消費されるエネルギは僅かなので
全体としては支障な無く動作する。The energy of the capacitor 13 causes the voltage of the capacitor 13 to rise. Capacitor 13
When the voltage exceeds a preset upper limit level, the self-extinguishing type semiconductor power element 17 is turned on, and the energy of the capacitor 13 is consumed and discharged by the discharging resistor 16. When the voltage of the capacitor 13 falls below the preset lower limit level, the self-extinguishing type semiconductor power element 17 turns off and the voltage of the capacitor 13 starts increasing again. With the above hysteresis comparator operation, the capacitor 13
Is controlled within a certain range. At this time,
Since there is a wiring inductance between AL11 and the P-side (positive) DC terminal, a resistor is provided to prevent the voltage of the capacitor 21 in the regenerative circuit from increasing due to the relationship between the stored energy and the first diode. 14, the capacitor 2
The energy of 1 flows into the capacitor 13 and is consumed by the resistor 16. Since the energy consumed by the resistor 16 is small, it operates without any trouble as a whole.
【００１８】図４は、本発明の更に他の実施例を示す構
成図であり、Ｐ側（正極）直流入力に接続された複数の
リアクトル１１a 、１１b からのエネルギを一台の回生
回路２２によって回生している。本実施例のように、本
発明は、複数のリアクトルからの回生エネルギが一台の
回生回路に並列に接続される場合でも有効である。FIG. 4 is a block diagram showing still another embodiment of the present invention, in which energy from a plurality of reactors 11a and 11b connected to a P-side (positive) DC input is supplied by a single regenerative circuit 22. Has regenerated. As in the present embodiment, the present invention is effective even when regenerative energy from a plurality of reactors is connected in parallel to one regenerative circuit.
【００１９】図５は、本発明の別の実施例を示す構成図
であり、Ｎ側電位を基準にして回生回路を構成した場合
を示す。この実施例は電位が変るため、ダイオ―ド１
２、ダイオ―ド１５の向きが図３とは異るが、作用は図
３と同じであり、本発明は、Ｎ側電位に接続されたリア
クトルに対しても適用される。FIG. 5 is a block diagram showing another embodiment of the present invention, and shows a case where a regenerative circuit is formed with reference to the N-side potential. In this embodiment, since the potential changes, the diode 1
2. Although the direction of the diode 15 is different from that of FIG. 3, the operation is the same as that of FIG. 3, and the present invention is also applied to a reactor connected to the N-side potential.
【００２０】図６は、本発明の更に他の実施例を示す構
成図であり、Ｐ側、Ｎ側両電位を基準として回路を構成
した場合の構成例である。Ｐ側、Ｎ側の構成は各々図
３、図５と同じである。本発明は回生回路がＰ側、Ｎ側
に分散配置された場合にも適用されるものであって、ア
ノ―ドリアクトルの数、分散、配置方等によらず適用が
可能である。FIG. 6 is a block diagram showing still another embodiment of the present invention, in which a circuit is configured based on both the P-side and N-side potentials. The configurations on the P side and the N side are the same as those in FIGS. The present invention is also applied to the case where the regenerative circuits are distributed and arranged on the P side and the N side, and can be applied irrespective of the number, distribution, arrangement and the like of the anode reactors.
【００２１】[0021]
【発明の効果】以上説明のように本発明によれば、高周
波共振現象を抑制し、ブス、回路構成用品の高周波過熱
を防止することができ、更に、回生回路停止時運転を継
続できる電力変換装置を提供することができる。As described above, according to the present invention, high-frequency resonance phenomenon can be suppressed, high-frequency overheating of buses and circuit components can be prevented, and furthermore, power conversion that can continue operation when the regenerative circuit is stopped. An apparatus can be provided.
【図１】本発明の一実施例を示す電力変換装置の構成
図。FIG. 1 is a configuration diagram of a power converter showing one embodiment of the present invention.
【図２】本発明の他の実施例を示す構成図。FIG. 2 is a configuration diagram showing another embodiment of the present invention.
【図３】本発明の更に別の実施例を示す構成図。FIG. 3 is a configuration diagram showing still another embodiment of the present invention.
【図４】本発明の更に又別の実施例を示す構成図。FIG. 4 is a configuration diagram showing still another embodiment of the present invention.
【図５】本発明の他の実施例を示す構成図。FIG. 5 is a configuration diagram showing another embodiment of the present invention.
【図６】本発明の更に別の実施例を示す構成図。FIG. 6 is a configuration diagram showing still another embodiment of the present invention.
【図７】本発明の更に又別の実施例を示す構成図。FIG. 7 is a configuration diagram showing still another embodiment of the present invention.
【図８】［図７］の電力変換装置のアノ―ドリアクトル
のエネルギを回生する回生回路の構成図。8 is a configuration diagram of a regenerative circuit for regenerating energy of an anode reactor of the power converter of FIG.
【図９】［図７］の電力変換装置のアノ―ドリアクトル
のエネルギを回生する回生回路の別の構成図。FIG. 9 is another configuration diagram of a regenerative circuit that regenerates energy of the anode reactor of the power converter of FIG.
１，１a 〜１d ………自己消弧形半導体電力
素子 ２，２a 〜２d ………ダイオ―ド ３a 〜３d ………スナバ回路 １１，１１a 〜１１d ………アノ―ドリアクトル １２，１２a 〜１２d ………ダイオ―ド １３，１３a 〜１３d ………コンデンサ １４，１４a 〜１４d ………抵抗 １５，１５a 〜１５d ………ダイオ―ド １６，１６a 〜１６d ………抵抗 １７，１７a 〜１７d ………自己消形半導体電力素
子 ２１，２１a 〜２１d ………コンデンサ ２２，２２a 〜２３d ………回生回路 ２３，２３a 〜２３d ………連系トランス ２４ ………交流電源 ７１a ，７１b ………電圧検出用分圧抵抗 ７２a 〜７２f ………自己消弧形半導体電力
素子 ７３ ………ゲ―ト回路 ７４ ………制御回路 ７５ ………ゲ―ト信号 ９１a 〜９１d ………自己消弧形半導体電力
素子 ９２ ………絶縁トランス ９３a 〜９３d ………ダイオ―ド ９４ ………直流電源1, 1a to 1d: Self-extinguishing type semiconductor power element 2, 2a to 2d: Diode 3a to 3d: Snubber circuit 11, 11a to 11d: Anodically reactor 12, 12a to 12d Diode 13, 13a to 13d Capacitor 14, 14a to 14d Resistor 15, 15a to 15d Diode 16, 16a to 16d Resistor 17, 17a to 17d ... Self-dissipating semiconductor power elements 21, 21a to 21d Capacitors 22, 22a to 23d Regenerative circuits 23, 23a to 23d Interconnection transformers 24 AC power supplies 71a, 71b ... Voltage detection voltage dividing resistors 72a to 72f... Self-extinguishing semiconductor power element 73... Gate circuit 74... Control circuit 75... Gate signals 91a to 91d. Arc-shaped semiconductor power device 9 2 Insulating transformers 93a to 93d Diode 94 DC power supply
Claims (1)
の正極（又は負極）に接続された電流増加率抑制用のリ
アクトルの直列回路と、該リアクトルと並列に接続され
た第１のダイオードと第１のコンデンサよりなる直列回
路と、前記第１のコンデンサに蓄積されたエネルギが流
入される第２のコンデンサを有し前記第１のコンデンサ
に蓄積されたエネルギを回生するための正極電位（又は
負極電位）を基準とした電力回生変換器と、該電力回生
変換器の正極（又は負極）とは異なる他の入力極と前記
第１のコンデンサと第１のダイオードの接続点を接続す
る第２のダイオードと、前記第１のコンデンサに並列に
接続された放電用抵抗と自己消弧形半導体素子の直列回
路とを有する電力変換装置において、前記第２のダイオ
ードに並列に抵抗を設けたことを特徴とする電力変換装
置。 A self-extinguishing semiconductor device and a DC circuit at one end.
Current suppression rate connected to the positive (or negative) electrode
Connected in series with the reactor's series circuit and the reactor
The series circuit consisting of the first diode and the first capacitor
And the energy stored in the first capacitor flows.
A first capacitor having a second capacitor
Positive electrode potential for regenerating the energy stored in the battery (or
Power regeneration converter based on negative electrode potential), and the power regeneration
The other input electrode different from the positive electrode (or negative electrode) of the
Connect the connection point between the first capacitor and the first diode
And a second diode connected in parallel with the first capacitor.
A series connection of a connected discharge resistor and a self-extinguishing semiconductor device
A power converter having a path
Power converter characterized by providing a resistor in parallel with the
Place.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP04246071A JP3112575B2 (en) | 1992-09-16 | 1992-09-16 | Power converter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP04246071A JP3112575B2 (en) | 1992-09-16 | 1992-09-16 | Power converter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0698551A JPH0698551A (en) | 1994-04-08 |
| JP3112575B2 true JP3112575B2 (en) | 2000-11-27 |
Family
ID=17143039
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP04246071A Expired - Lifetime JP3112575B2 (en) | 1992-09-16 | 1992-09-16 | Power converter |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3112575B2 (en) |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6696659B1 (en) | 2001-01-31 | 2004-02-24 | Southeastern Tool & Die Company, Inc. | Method of forming a mold for a golf club grip |
| US8123627B2 (en) | 2003-03-18 | 2012-02-28 | Ben Huang | Single panel golf club grip |
| US8201357B2 (en) | 2007-03-19 | 2012-06-19 | Ben Huang | Fishing pole grip |
| US8360898B2 (en) | 2002-06-11 | 2013-01-29 | Ben Huang | Grip |
| US8424236B2 (en) | 2009-05-11 | 2013-04-23 | Ben Huang | Multi-layered grip for use with fishing poles |
| US8435133B2 (en) | 2006-01-25 | 2013-05-07 | Ben Huang | Panel grip with cut-outs and inserts |
| US8480510B2 (en) | 2009-08-28 | 2013-07-09 | Ben Huang | Sleeve member for use in golf club grips and the like |
| US8518505B2 (en) | 2009-04-10 | 2013-08-27 | Ben Huang | Multi-layered grip |
| US8617664B2 (en) | 2006-05-22 | 2013-12-31 | Ben Huang | Multi-polymer grip member |
| US9090307B2 (en) | 2009-04-28 | 2015-07-28 | Ben Huang | Grip for the handle of an article |
| US9440128B2 (en) | 2002-06-11 | 2016-09-13 | Ben Huang | Method of making a grip |
| US9661833B2 (en) | 2009-04-10 | 2017-05-30 | Ben Huang | Multi-layered grip |
| TWI741916B (en) | 2020-12-18 | 2021-10-01 | 賴威霆 | Method of texture-forming of cone shaped objects |
-
1992
- 1992-09-16 JP JP04246071A patent/JP3112575B2/en not_active Expired - Lifetime
Cited By (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6696659B1 (en) | 2001-01-31 | 2004-02-24 | Southeastern Tool & Die Company, Inc. | Method of forming a mold for a golf club grip |
| US10112087B2 (en) | 2002-06-11 | 2018-10-30 | Ben Huang | Grip and method of making a grip |
| US8360898B2 (en) | 2002-06-11 | 2013-01-29 | Ben Huang | Grip |
| US9440128B2 (en) | 2002-06-11 | 2016-09-13 | Ben Huang | Method of making a grip |
| US9114295B2 (en) | 2002-06-11 | 2015-08-25 | Ben Huang | Grip |
| US8845448B2 (en) | 2003-03-18 | 2014-09-30 | Ben Huang | Single panel golf club grip |
| US8123627B2 (en) | 2003-03-18 | 2012-02-28 | Ben Huang | Single panel golf club grip |
| US9144716B2 (en) | 2006-01-25 | 2015-09-29 | Ben Huang | Panel grip with cut-outs and inserts |
| US8435133B2 (en) | 2006-01-25 | 2013-05-07 | Ben Huang | Panel grip with cut-outs and inserts |
| US8617664B2 (en) | 2006-05-22 | 2013-12-31 | Ben Huang | Multi-polymer grip member |
| US10040091B2 (en) | 2006-05-22 | 2018-08-07 | Ben Huang | Multi-polymer grip member |
| US8201357B2 (en) | 2007-03-19 | 2012-06-19 | Ben Huang | Fishing pole grip |
| US8499487B2 (en) | 2007-03-19 | 2013-08-06 | Ben Huang | Fishing pole grip |
| US8518505B2 (en) | 2009-04-10 | 2013-08-27 | Ben Huang | Multi-layered grip |
| US9661833B2 (en) | 2009-04-10 | 2017-05-30 | Ben Huang | Multi-layered grip |
| US9090307B2 (en) | 2009-04-28 | 2015-07-28 | Ben Huang | Grip for the handle of an article |
| US8424236B2 (en) | 2009-05-11 | 2013-04-23 | Ben Huang | Multi-layered grip for use with fishing poles |
| US8966809B2 (en) | 2009-05-11 | 2015-03-03 | Ben Huang | Multi-layered grip and method of making a sleeve for a grip |
| US9375833B2 (en) | 2009-08-28 | 2016-06-28 | Ben Huang | Sleeve member for use in golf club grips and the like |
| US8480510B2 (en) | 2009-08-28 | 2013-07-09 | Ben Huang | Sleeve member for use in golf club grips and the like |
| US8734267B2 (en) | 2009-08-28 | 2014-05-27 | Ben Huang | Sleeve member for use in golf club grips and the like |
| TWI741916B (en) | 2020-12-18 | 2021-10-01 | 賴威霆 | Method of texture-forming of cone shaped objects |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0698551A (en) | 1994-04-08 |
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