JP3106800U

JP3106800U - Light emitting diode chip cover layer structure

Info

Publication number: JP3106800U
Application number: JP2004004426U
Authority: JP
Inventors: 李明順; 孫平如
Original assignee: 李洲科技股▲ふん▼有限公司
Priority date: 2004-07-27
Filing date: 2004-07-27
Publication date: 2005-01-20
Anticipated expiration: 2010-07-27

Abstract

【課題】輝度を下げないで異色光リング現象を抑える発光ダイオードのチップカバー層構造を提供する。
【解決手段】発光ダイオードのチップカバー層構造は、チップ３０の上方に透明隙間層６２を被せ・その上に蛍光材４０を混ぜた効果層６３を被せ、その効果層とチップ最上層に対応する位置の厚みは、チップ側面位置に相対する厚みより厚い。そのため凸状の効果層は、チップ最上層と側面光線と蛍光材の波長結合が平衡し、有効に異色リングの発生を抑える。
【選択図】図3Provided is a light emitting diode chip cover layer structure that suppresses a different color light ring phenomenon without lowering luminance.
The chip cover layer structure of a light-emitting diode covers a transparent gap layer 62 above a chip 30 and an effect layer 63 mixed with a fluorescent material 40 thereon, and corresponds to the effect layer and the top layer of the chip. The thickness of the position is thicker than the thickness facing the chip side surface position. Therefore, the convex effect layer balances the wavelength coupling of the chip top layer, the side beam, and the fluorescent material, and effectively suppresses the occurrence of a different color ring.
[Selection] Figure 3

Description

本考案は、発光ダイオードのチップカバー層構造に関するもので、有効に異色光リング消去するものである。 The present invention relates to a chip cover layer structure of a light emitting diode and effectively erases a different color light ring.

図1に示すとおり、チップの光線と蛍光材で波長結合し、特定色の光を発するのが発光ダイオードである。発光ダイオードは、密封体内部に同極の導電端子10及び積載部20が設置され、積載部20にはチップ30及び蛍光材40が固定される。他に金線50によって、チップ30の電極層31と導電端子10が連結される。 As shown in FIG. 1, a light emitting diode emits light of a specific color by wavelength coupling with a light beam of a chip and a fluorescent material. In the light emitting diode, a conductive terminal 10 having the same polarity and a stacking unit 20 are installed inside a sealed body, and a chip 30 and a fluorescent material 40 are fixed to the stacking unit 20. In addition, the electrode layer 31 of the chip 30 and the conductive terminal 10 are connected by the gold wire 50.

導電端子10に電気を通すと、チップ30は蛍光材40を通して放射された光線、即ち蛍光材40の波長結合により、特定色の光を形成する。例として、公知の白色発光ダイオードは、チップが発した青色の光が黄色の蛍光材を通して放射され、青と黄が結合して、白色効果をもたらす。図1に示す公知の発光ダイオードの構造では、チップ30主体上層の空間に蛍光材のカバーがあたらず、チップ30が上向きに直射した光線は反対側に反射した光線と同じく、蛍光材の結合作用を受けることができない。このため、はっきりとした異色光リングが形成される。 When electricity is passed through the conductive terminal 10, the chip 30 forms light of a specific color by light rays emitted through the fluorescent material 40, that is, wavelength coupling of the fluorescent material 40. As an example, in a known white light emitting diode, blue light emitted by a chip is emitted through a yellow phosphor, and blue and yellow combine to produce a white effect. In the known light-emitting diode structure shown in FIG. 1, the fluorescent material cover is not covered in the space above the chip 30 main body, and the light beam directly radiated upward by the chip 30 is the same as the light beam reflected on the opposite side, and the binding action of the fluorescent material Can not receive. For this reason, a clear different color light ring is formed.

更に市場には、チップ30表層カバーに相当の厚みを具えた白色絶縁ゴムの発光ダイオードがある。白色絶縁ゴムを通して放射される作用によって、異色光リング作用を緩和することを目的としている。しかし、僅かに異色光リング現象が発生し、チップ上方には一層の白色カバー層が設置されるため、発光ダイオードの輝度は低下してしまう。 In addition, there is a white insulating rubber light emitting diode on the market with a considerable thickness on the chip 30 surface cover. The object is to alleviate the different color light ring action by the action emitted through the white insulating rubber. However, a slightly different color light ring phenomenon occurs, and a white cover layer is provided above the chip, so that the luminance of the light emitting diode is lowered.

解決しようとする問題点は、異色光リング現象を消去するために設置した白色カバー層によって、輝度が低下してしまう点である。 The problem to be solved is that the brightness is lowered by the white cover layer installed to eliminate the different color light ring phenomenon.

本考案は、チップの上方に透明隙間層を被せ、その上に蛍光材を混ぜた効果層を被せ、その効果層とチップ最上層に対応する位置の厚みは、チップ側面位置に相対する厚みより厚い。そのため凸状の効果層は、チップ最上層と側面光線と蛍光材の波長結合が平衡し、有効に異色リングの発生を抑えることを最も主要な特徴とする。 In the present invention, a transparent gap layer is placed on the top of the chip, and an effect layer mixed with a fluorescent material is placed thereon. The thickness of the position corresponding to the effect layer and the top layer of the chip is greater than the thickness corresponding to the chip side surface position. thick. For this reason, the convex effect layer is characterized in that the wavelength combination of the chip top layer, the side beam, and the fluorescent material is balanced, and effectively suppresses the occurrence of a different color ring.

本考案の発光ダイオードのチップカバー層構造は、輝度を下げないで異色光リング現象を抑えるという利点がある。 The chip cover layer structure of the light-emitting diode of the present invention has an advantage of suppressing the different color light ring phenomenon without lowering the luminance.

図2に示すとおり、本考案は、密封体70内に異なる電極の導電端子10と積載部20が設置される。この密封体70はエポキシ材もしくは透明材で、積載部20内にチップ30及び蛍光材40が納置される。別に金線50によってチップ30の電極層31と導電端子10が連結する。導電端子10が通電すると、チップ30は蛍光材40を通して放射された光線、即ち蛍光材40と波長結合して特定色の光を形成する。 As shown in FIG. 2, in the present invention, conductive terminals 10 and stacking portions 20 of different electrodes are installed in a sealing body 70. The sealing body 70 is an epoxy material or a transparent material, and the chip 30 and the fluorescent material 40 are placed in the stacking unit 20. Separately, the electrode layer 31 of the chip 30 and the conductive terminal 10 are connected by the gold wire 50. When the conductive terminal 10 is energized, the chip 30 combines with the light emitted through the fluorescent material 40, that is, the fluorescent material 40, to form light of a specific color.

図3に示すとおり、チップ30の上方カバーには、透明隙間層62があり、その透明隙間層62上方には蛍光材40が混合された効果層63が被さる。実施時、透明隙間層62は透明絶縁ゴムによって硬化して凸状の構造形体になっている。その効果層63は粉末状の蛍光材40とエポキシ樹脂が混合されたもので、硬化後凸状形体から、効果層63上方に、透明絶縁ゴムによって硬化し、凸形体の透光層64が被さる。これらによって、チップ30の保護作用を形成し、異色光リングを防止するカバー構造となる。 As shown in FIG. 3, the upper cover of the chip 30 has a transparent gap layer 62, and the transparent gap layer 62 is covered with an effect layer 63 in which the fluorescent material 40 is mixed. At the time of implementation, the transparent gap layer 62 is cured by a transparent insulating rubber to form a convex structure. The effect layer 63 is a mixture of a powdery fluorescent material 40 and an epoxy resin. After the curing, the effect layer 63 is cured by the transparent insulating rubber above the effect layer 63, and the convex-shaped translucent layer 64 is covered. . As a result, a protective structure for the chip 30 is formed, and a cover structure that prevents the different color light ring is obtained.

効果層63とチップ30最上層の相対位置の厚みはチップ30側位置の厚みより厚く、それによって突出した効果層63は、チップ30の最上層と側面光線と蛍光材の波長結合が平衡し、有効に異色光リングの発生を抑える。 The thickness of the relative position of the effect layer 63 and the uppermost layer of the chip 30 is thicker than the thickness of the position of the chip 30 side, and the protruding effect layer 63 balances the wavelength coupling of the uppermost layer of the chip 30, the side rays and the fluorescent material, Effectively suppress the occurrence of different color light rings.

図2及び図3に示す実施例に於いて、積載部20導電端子10上に設置された碗型構造体で、そのチップ30底部には別の蛍光材40が設置される。チップ30底部に設置された蛍光材40は蛍光粉末と接着剤が混合されて構成され、それによって、積載部20底層に塗布される。チップ30底部には蛍光材40に埋め込む固定段を具え、それによってチップ30と積載部20は圃定される。 In the embodiment shown in FIG. 2 and FIG. 3, another fluorescent material 40 is installed at the bottom of the chip 30 in the vertical structure installed on the stacking portion 20 conductive terminal 10. The fluorescent material 40 installed at the bottom of the chip 30 is configured by mixing fluorescent powder and an adhesive, and is thereby applied to the bottom layer of the stacking unit 20. The bottom of the chip 30 is provided with a fixed stage embedded in the fluorescent material 40, whereby the chip 30 and the stacking unit 20 are fixed.

更に図4に示すとおり、発光ダイオ一ドを直接回路板80上に設置する。その回路板80上には予め凹んだ積載部20が成形され、各導電端子(図未提示)は、直接回路板80の回路接続ポイントに配置される。前述した蛍光材40、チップ30、及び透明隙間層62、効果層63、透光層64等のユニットは、凹形の積載部20内に順に設置され、回路板構成の発光ダイオ一ドを形成する。 Further, as shown in FIG. 4, the light emitting diode is directly installed on the circuit board 80. On the circuit board 80, a recessed portion 20 is formed in advance, and each conductive terminal (not shown) is directly arranged at a circuit connection point of the circuit board 80. The units such as the fluorescent material 40, the chip 30, and the transparent gap layer 62, the effect layer 63, and the light transmitting layer 64 described above are sequentially installed in the concave stacking portion 20 to form a light emitting diode having a circuit board configuration. To do.

公知の発光ダイオード構造指示図である。It is a well-known light emitting diode structure instruction | indication figure. 本考案第一実施例の発光ダイオード構造指示図である。It is a light emitting diode structure instruction | indication figure of 1st Example of this invention. 本考案発光ダイオードのチップカバー層構造の拡大指示図である。It is an expansion instruction | indication figure of the chip cover layer structure of this invention light emitting diode. 本考案第二実施例の発光ダイオード構造指示図である。It is a light emitting diode structure instruction | indication figure of 2nd Example of this invention.

Explanation of symbols

10 導電端子
20 積載部
30 チップ
31 電極層
40
蛍光材
50
金線
62
透明隙間層
63
効果層
64 透光層
70
密封体
80 回路板 10 Conductive terminal
20 Loading section
30 chips
31 Electrode layer
40
Fluorescent material
50
Gold wire
62
Transparent gap layer
63
Effect layer
64 Translucent layer
70
Sealed body
80 circuit board

Claims

In the chip cover layer structure of the light emitting diode, which mainly fixes the chip and the fluorescent material to the loading portion, and connects the electrode layer of the chip and the conductive terminal with a gold wire,
The loading part is covered with a transparent gap layer above the chip, and the effect layer mixed with the fluorescent material is covered above the transparent gap layer. A chip cover layer structure of a light emitting diode, characterized in that it is thicker, thereby balancing the wavelength coupling between the top layer of the chip, the light rays on the side and the fluorescent material, and suppressing the occurrence of a different color light ring.

2. The chip cover layer structure of a light emitting diode according to claim 1, wherein the effect layer is covered with a convex light-transmitting layer.

2. The chip cover layer structure of a light emitting diode according to claim 1, wherein a fluorescent material is installed on a bottom layer of the stacking portion, and a fixed stage for embedding in the fluorescent material is formed on a bottom portion of the chip.

2. The loading portion is characterized in that a fluorescent material is installed in a bottom layer, a fixed stage for embedding in the fluorescent material is formed on a bottom portion of a chip, and a transparent insulating layer is covered above the effect layer. The chip cover layer structure of the light emitting diode as described.

2. The chip cover layer structure of a light emitting diode according to claim 1, wherein the effect layer is made of a fluorescent material mixed with an epoxy resin and cured into a convex shape.

2. The chip cover layer structure of a light emitting diode according to claim 1, wherein the transparent gap layer is formed by curing transparent insulating rubber into a convex shape.

4. The chip cover layer structure of a light emitting diode according to claim 3, wherein the transparent gap layer and the translucent layer are formed in a convex shape by dropping the transparent insulating rubber.