JP3096763B2 - Cutting and cutting method of semiconductor block - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a method for cutting and cutting a semiconductor block.

[0002]

2. Description of the Related Art Referring to FIGS. 19 to 24, in a conventional semiconductor manufacturing process, a semiconductor block made of silicon or the like is cut into a large number of wafers using a multi-wire saw until the wafers are separated. The steps will be described.

Referring to FIG. 19, fixing plate 2 which is an aluminum plate
Adhesive 4 is applied on top, and fixing plate 2 on which adhesive 4 is applied
A discard plate 6 as a glass plate is bonded and fixed to the upper part. An adhesive 8 is applied on the discard plate 6, and a semiconductor block 10 made of silicon is bonded and fixed on the discard plate 6 on which the adhesive 8 is applied. Thus, the preparation of the work 12 to be cut by the multi-wire saw is completed. Here, the discard plate 6 is necessary for fully cutting the semiconductor block 10 into many wafers with a multi-wire saw, and the fixing plate 2 is necessary for fixing the work 12 to the table of the multi-wire saw. Things.

Referring to FIG. 20, a multi-wire saw 1 is shown.
4 schematically shows a structure in which a wire 18 is stretched between a pair of cylindrical wire guides 16 arranged in parallel with each other in accordance with a cutting interval of the semiconductor block 10. The work 12 is placed above the wire 18 between the pair of wire guides 16, 16.
They are arranged facing each other with their sides facing. This work 12
In, the discard plate 6 and the fixing plate 2 are fixed to the table 20 of the multi-wire saw 14 with screws 22. In this arrangement, the table 20 is lowered in the direction of the work 12 indicated by the arrow to bring the semiconductor block 10 into contact with the wire 18. The semiconductor block 10 is cut out by running the wire 18 in the direction of the arrow while supplying a cutting fluid (slurry), which is a mixture of abrasive grains and oil, to the contact location. By lowering the table 20 in this state, the semiconductor block 10 is cut, and finally, as shown in FIG. 21, the semiconductor block 10 is fully cut into a number of wafers 24 and the discard plate 6 Is cut to about half of its thickness.

Next, the table 20 is lifted to remove the wire 18, the wire 18 is removed, and the screw 22 is loosened to take out the work 12 from the table 20 of the multi-wire saw 14. In the work 12 thus taken out, the semiconductor block 10
Is cut as a large number of wafers 24, but is still bonded to the discard plate 6 with the adhesive 8, so that the wafer 2
In order to separate 4 from the disc 6, the work 12
The adhesive 8 is dissolved by dipping in an acetic acid aqueous solution for about 4 hours. After the adhesive 8 is melted, the wafer 24 is manually separated from the discard plate 6 as shown in FIG.

The details of the multi-wire saw 14 used for cutting the semiconductor block 10 will be described with reference to FIG. 23. The multi-wire saw 14 includes a supply spool 26, a supply pulley 28, and a cutting fluid supply nozzle 3.
0, wire guides 32-38, take-up pulley 4
And a take-up spool 42 as a main component, and the wire 18 supplied from the supply spool 26 is supplied to the four wire guides 32 through the supply pulley 28.
After winding between the winding shafts 38 to 38, the winding spool 42 winds the winding through a winding pulley 40. The cutting fluid supplied from the cutting fluid supply nozzle 30 to the supply pipe 44 is evenly supplied onto each wire 18 from the slit 46 of the lower opening.

The thickness of the wafer cut by the multi-wire saw 14 shown in FIG. 23 will be described with reference to specific numerical values with reference to FIG. FIG. 24 shows a wafer 24 that is fully cut by the wire 18, the discard plate 6 cut by the wire 18, and the fixing table 2. Further, an enlarged view of the wire portion cut into the discard plate 6 is shown in the direction of the arrow. Wire guide 32
38 are formed with grooves into which the wires 18 enter. In such a configuration, the wire guides 32 to 3
8 are cut at a predetermined pitch of 560 μm in the axial direction, the diameter of the wire 18 is 180 μm, and the diameter of the abrasive contained in the cutting fluid is 10 μm. Wafer 24 to be cut
Has been confirmed to have a thickness of 350 μm. Then, the cutting margin (white) by the wire 18 is 210
Therefore, 30 μm, which is the difference from the wire diameter of 180 μm, is the net cutting allowance by the abrasive grains. This net cutting margin is three times the abrasive grain size.

Since the supply spool 26 and the take-up spool 42 need to be replaced each time the semiconductor block 10 is cut once, the wire length wound in advance on the supply spool 26 is approximately 150 km. It is necessary to terminate the cutting of the semiconductor block 10 while such a long wire 18 travels. However, if the wire 18 is cut in the middle, even if the wire 18 is tied, it is easily cut at the knot. Subsequent cutting work is not possible. As an example of the current cutting conditions, when the table 20 is lowered at a speed of 300 μm / min and the wire 18 travels at a speed of 6 m / sec, the 100 mm square semiconductor block 10 is cut.
Approximately 120k wire length needed to cut
m, and the remaining wire length of 30 km is a margin.

[0009]

In the above-described conventional semiconductor block cutting technique, a wafer cut by a multi-wire saw is bonded to a discard plate with an adhesive, so that the wafer is separated from the discard plate. For this reason, it is necessary to immerse in an aqueous solution of acetic acid for a long time of 4 hours, but this causes a problem that the yield in the production of semiconductors is reduced and the cost is increased.

Furthermore, it is necessary to handle an aqueous solution of acetic acid. However, this solution is not suitable for the working environment, and also requires a facility that takes waste liquid treatment into consideration.

[0011]

According to the first aspect of the present invention, a semiconductor block is set on a table of a multi-wire saw via a fixing stand, and a plurality of wafers are cut from the semiconductor block by the wires of the multi-wire saw. The above-mentioned problem is solved by gradually increasing the diameter of the wire when cutting after taking out.

According to a second aspect of the present invention, a semiconductor block is set on a table of a multi-wire saw via a fixing table, and a plurality of wafers are cut out from the semiconductor block by the wires of the multi-wire saw before cutting. Solves the above-mentioned problem by attaching abrasive grains to the wire and cutting the wire.

According to a third aspect of the present invention, a semiconductor block is set on a table of a multi-wire saw via a fixing table, and the wire of the multi-wire saw is formed into a flat shape, and a plurality of wafers are cut from the semiconductor block. In, the long-axis direction end face of the wire is cut out in the cutting direction, and in cutting of a plurality of cut-out wafers, the long-axis direction end face of the wire is cut in the wafer cutting direction. The above-mentioned problem has been solved.

According to a fourth aspect of the present invention, a semiconductor block is set on a table of a multi-wire saw via a fixing table, and a plurality of wafers are cut out of the semiconductor block by the wires of the multi-wire saw before cutting. Solves the above-described problem by cutting the wafer by vibrating the table in the front-rear direction.

According to a fifth aspect of the present invention, a semiconductor block is set on a table of a multi-wire saw via a fixing table, and a plurality of wafers are cut out from the semiconductor block by the wires of the multi-wire saw before cutting. Solves the above-mentioned problem by cutting the wafer by rotating and vibrating the table.

According to a sixth aspect of the present invention, a semiconductor block is set on a table of a multi-wire saw via a fixing table, and when a plurality of wafers are cut from the semiconductor block by the wires of the multi-wire saw, a predetermined diameter is required. The cutting is performed in a state where the abrasive grains are attached to the wire, and in cutting the plurality of wafers thus cut out, the cutting is performed in a state where the abrasive grains having a diameter larger than the abrasive grains are attached to the wire. The above-mentioned problem has been solved.

[0017]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A method for cutting and cutting a semiconductor block using a multi-wire saw in a semiconductor manufacturing process according to the present invention will be described below. In addition, the reference numerals assigned to the respective parts and components described below with reference to the drawings are the same as or similar to those in the related art, and are assigned the same reference numerals when corresponding.

In each embodiment of this method, a semiconductor block 10 made of silicon or the like, which is formed in a rectangular parallelepiped shape as shown in FIG. 1, is directly placed on a fixed plate 2 made of aluminum or the like having a rectangular planar shape. A work 12 to be adhered and fixed using an appropriate adhesive 4 is prepared. The work 12 is fixed to the table 20 of the multi-wire saw 14 by passing screws through screw holes 50 formed in the fixing plate 2.

Embodiment 1 A method of cutting and cutting a wafer using a multi-wire saw according to Embodiment 1 of the present invention will be described with reference to FIGS. Since the multi-wire saw has been described with reference to FIG. 23, it will be described with reference to FIG.

FIG. 2 schematically shows the wire 18 used in the first embodiment in a state in which the shape of the wire 18 is conceptually reduced by ignoring the relative relationship between the length and the diameter. This wire 18 has a total length of, for example, 150 km and is 125 km from the leading end in the traveling direction when the wire 18 is traveled from the supply spool 26 to the multi-wire saw 14 shown in FIG. Is a wire having the same diameter of, for example, 180 μmφ, and the remaining wire whose diameter gradually increases from 180 μmφ to 530 μmφ. Here, the wire portion having the same diameter is referred to as 18a, and the wire portion having a gradually increasing diameter is referred to as 18b. 3a, 3b, and 3c show a wafer cutting mode, a wafer cutting mode, and a wafer storage mode, respectively. FIG.
m), and the horizontal axis indicates the wire traveling distance (km). Here, of the total length 150 km of the wire 18, 120 km from the front end in the running direction is used for cutting the wafer, the next 5 km is used as a margin, and the remaining 25 km is used for cutting the wafer. Used.

The work 12 has its fixed plate 2 fixed on the table 20 of the multi-wire saw 14 with screws as shown in FIG. In the wafer cutting mode, the table 20 of the multi-wire saw 14 is lowered, and the block 10 on the fixing plate 2 is lowered toward the wire 18 while the wire 18 is moved to cut the wafer 24 from the block 10. To go. This shaving is performed at the wire portion 18a. When the traveling distance of the wire reaches 120 km, the cutting of the wafer 24 ends.
The end state of this cutting is shown in FIG. 3a. FIG.
As shown by a, a wire portion 18a of 180 μmφ is located at the bottom of the cut. In this case, block 10
Is not fully cut, so the block 10
This eliminates the need for a discard plate for full-cutting, thereby reducing costs. FIG. 3A shows a state where a portion of the wire portion 18a having a wire diameter of 180 μmφ is cut out at a traveling distance of 120 km in FIG. If the cutting of the wafer 24 is started immediately after the cutting of the wafer 24, the wafer 24 may be cut in spite of the cutting of the wafer 24. When the wafer cutting mode is completed, a lowering mode in which the lowering of the table 20 of the multi-wire saw 14 is stopped and the wire 18 is further driven for 5 km on the wire portion 18a having the same diameter, that is, 180 μmφ, is provided. After the process is completed, a cutting mode is started at the wire portion 18b where the wire diameter gradually increases. The point b in FIG. 4 indicates the travel distance of the wire 18 when the wire 18 travels 5 km after the wafer 24 is cut out, that is, the use length.

From the point b, the wire 18
, The wire 18 has a wire diameter of 180 μ
The cutting mode is started by the wire portion 18b gradually increasing from mφ. In this cutting mode, the table 2
The descent of zero has been stopped. FIG. 3B shows the state at the point c in FIG. 4. In FIG. 3B, the cutting position of the wafer 24 is reduced by stopping the lowering of the table 20 and simultaneously increasing the diameter of the wire portion 18b. The shaving area increases in proportion to the increase in the diameter of the wire portion 18b. In this case, the reason why the diameter of the wire 18 is gradually increased at the wire portion 18b is to prevent the wafer 24 from cracking if the wire diameter is suddenly increased. Thus, when the wire portion 18b is moved and the wire diameter on the wafer 24 becomes 530 μmφ, the cut area of the wafer 24 increases, and the cut areas of the adjacent wafers 24 communicate with each other. In the case of 24, adjacent parts are cut and separated. The wafers 24 thus cut are individually stored in the respective storage openings of the dedicated receiving jigs 52 as shown in FIG. 3C. Thus, the cutting, cutting, and storing of the wafer 24 are completed.
FIG. 3c corresponds to point d in FIG.

The length of the wire required to cut the wafer 24 is determined by the table descent speed of the multi-wire saw 14,
It is determined from the running speed of the wire and the size of the block. Of the above-described total length of 150 km of the wire, the travel distance of the wire until the wafer is cut is 120 km, but this is an example. When the block size was 6 m / sec and the block size was 100 mm square, the wire length required for shaving was 120 km. Therefore, the extra length was set to 5 km, and the wire length for cutting the wafer was set to 25 km. Detailed descriptions of the control of the traveling speed of the wire, the timing of the descent of the table and the descent stop and the control of the descent speed, the control of the cutting fluid supply operation, and the notification control of the cutting state, cutting state, and the like are omitted. However, if, for example, the table descending speed, the wire running speed, and the size of the block as described above, the cutting of the wafer is completed after about 6 hours, the data of these speeds and the like are input to the control device of the multi-wire saw. After that, the elapse of the time when the cutting of the wafer is completed, the descent of the table is automatically stopped, the traveling of the wire is stopped, and the supply of the cutting fluid is stopped. What is necessary is just to notify that. Further, with respect to the margin after the cutting of the wafer and the cutting, it is preferable that the above-mentioned control device controls the start of the running of the wire and the start of the supply of the cutting fluid again while the table is held at the lowered position. Such control does not require a detailed description in the first embodiment, and thus the description thereof is omitted.

As described above, in the first embodiment, since the wafer cut out from the block is mechanically cut and separated, there is no need to separate the wafer from the discard plate as in the related art. Eliminates the need for discarded plates, eliminates the need for acetic acid aqueous solution to separate from discarded plates, and eliminates the need for long-time separation work required for separation with acetic acid, improving the yield in semiconductor manufacturing In addition to this, equipment for improving the working environment and treating acetic acid waste liquid is not required, so that the cost can be reduced.

Second Embodiment A second embodiment of the present invention will be described with reference to FIGS. The second embodiment is characterized in that the wire 18 described with reference to FIG. 5 is used.
The wire 18 of the multi-wire saw 14 used in the second embodiment has a total length of 150 km, similarly to the wire used in the first embodiment, and has the same wire diameter from the leading end in the traveling direction of the wire to 125 km. Moreover, nothing is attached to the outer peripheral surface, but the difference from the first embodiment is that the wire diameter does not change even after 125 km,
Further, from 125 km onward, diamond abrasive grains 54 having a grinding diameter of 130 μmφ are attached. FIG.
FIG. 6A shows the wafer cutting mode of FIG. 3A, and FIG.
FIG. 6c corresponds to the wafer cutting mode of FIG. 3c, respectively.

In the wafer cutting mode, the work 12 is set on the multi-wire saw 14 and
From the supply spool 26 and the wire 18
To supply the wafer 2 from the block 10
We cut 4 out. As the traveling distance of the wire 18 increases, the cutting of the wafer 24 progresses, and when the traveling distance of the wire 18 becomes 120 km, the cutting of the wafer 24 ends as shown in FIG. 6A. The cut-out state of the wafer 24 shown in FIG. 6A corresponds to the point a in FIG. 7, that is, the wafer 24 has been cut out by the traveling of the wire portion having a length of 120 km to which the diamond abrasive grains 54 are not attached. ing. When this cutting is completed, the descent of the table 20 is stopped, but for a while after that, the wire 18 is run for 5 km as a margin. After the travel of this margin, this corresponds to the travel of point b in FIG. 7, that is, the travel of the wire portion having a length of 5 km to which the diamond abrasive grains 54 are not attached. Then, the wire portion after this margin is changed to a portion where the diamond abrasive grains 54 are attached. When the wire 18 is further moved, the wafer 20 is cut by the diamond abrasive grains 54 having an abrasive diameter of 130 μmφ. FIG. 6B shows the middle of this cutting and corresponds to the point c in FIG. As the traveling of the wire 18 proceeds, the wafer 24 is finally cut. FIG. 6c
Indicates a state where the cutting is completed, and corresponds to a point d in FIG. The wafers 24 thus cut are individually stored in the respective receiving openings of the receiving jig 52 as shown in FIG. 6C.

As described above, also in the second embodiment, the same effects as in the above embodiment can be obtained.

Third Embodiment A third embodiment of the present invention will be described with reference to FIGS. In the third embodiment, a flat wire 18 is used as shown in FIG.
The wire 18 has a flat shape with a total length of 150 km. In the wafer cutting mode, as shown in FIG. 8A, the long axis direction of the flat portion faces the cutting direction, and the wire 18 is cut at the long-axis end face 18c. In the wafer cutting mode, as shown in FIG. 8b, the long-axis direction end faces 18c face the cutting direction, that is, the wafer direction to be adjacently separated from each other. What is rotated by 90 degrees is used.

FIG. 9a corresponds to FIG. 3a, FIG. 9b corresponds to FIG. 3b, and FIG. 9c corresponds to FIG. 3c. In FIG. 10, the vertical axis is 0 degrees when the wire is as shown in FIG.
In the case shown in FIG. 3B, the wire angle is set to 90 degrees, and the horizontal axis represents the travel distance of the wire. By lowering the table 20 toward the block 10, the wafer 24 is cut out with the long-axis end surface 18c of the wire 18 which coincides with the cutting direction of the wafer 24. As shown in FIG. It is cut out. When this cutting is completed, wire 18
Is consumed after traveling 120 km as shown in FIG. A point a in FIG. 10 indicates a cutting end position of the wafer 24, and the wire 18 is rotated by 90 degrees as shown in FIG. 9B to be cut by the longitudinal end face 18c facing the cutting direction of the wafer 24. Go. Point b in FIG. 10 indicates the middle of the cutting. When the cutting of the wafer 24 is completed as shown in FIG.
Store individually in each receptacle. FIG. 9c corresponds to point c in FIG.

FIG. 11 shows a wire rotating mechanism for rotating the wire 18 by 90 degrees in the cutting direction of the long axis direction end face 18c in the cutting mode of the wafer 24 in the cutting mode of the wafer 24 and in the cutting mode of the wafer. This will be described with reference to FIG. FIG. 11 is a front view of the multi-wire saw and the work, FIG. 12a is a cross-sectional view taken along the line AA of FIG. 11, and FIGS.
Shows cross-sectional views along the line BB in FIG. 11, respectively. In particular, FIG. 12B shows the rotation state of the wire in the wafer cutting mode, and FIG. 12C shows the rotation state of the wire in the wafer cutting mode.

Each of the pair of wire guides 32 and 34 is formed of an iron cylinder and the surface thereof is covered with a soft resin.
8, two pairs of upper and lower rollers 56 and 58 are provided in front and rear of the traveling direction. The work 12 is located between these pairs of rollers 56 and 58. The wire guides 32 and 34 have grooves 6 for storing the wires 18.
A number of 0s are formed parallel to each other along the axial direction.
These grooves have a pitch of 560 μm and a groove width of 210 μm.
m, and the groove depth is 530 μm. The wire 18 has a short axis direction length of 180 μm and a long axis direction length of 530 μm. The wire 18 is housed in each groove 60 of the wire guides 32 and 34 with the long-axis side end 18c surface exposed. The pair of upper and lower rollers 56 and 58 are spaced at a predetermined interval, for example, 600 μm, which is slightly longer than the length 530 μm in the long axis direction, so that the wire 18 can pass through the long end face 18 c in the cutting direction. In the wafer cutting mode, the wire 18 guided by the wire guides 32 and 34 as shown in FIG.
Is moved with its long-axis end face 18c facing the block side. In the wafer cutting mode, the distance between the pair of upper and lower rollers 56 and 58 is narrowed by a roller moving mechanism (not shown) so that the wire 18 is moved. By being rotated 90 degrees, the long-axis end face 18c is directed toward the wafer cutting direction.

As described above, in the third embodiment, the same effects as those of the above embodiment can be obtained.

Fourth Embodiment A fourth embodiment of the present invention will be described with reference to FIGS. In the fourth embodiment, the multi-wire saw 14 is provided with a table 20 having a function of vibrating the wafers in the front-rear direction, that is, between the wafers to be cut adjacent to each other, below the fixing plate 2. I have.
The wire used for cutting and cutting the wafer has a constant diameter. The wafer 24 is cut by lowering the table 20 of the multi-wire saw 14 and running the wire 18. When the cutting is completed as shown in FIG.
Is stopped, and the table 20 is vibrated in the front-rear direction indicated by the arrow as shown in FIG. 13B. This vibration causes the wire 18 to cut the wafer 24 in the front-rear direction inside the cut-out reaching portion of the wafer 24, so that the wafer 24 is moved to the wafer 2 as shown in FIG.
As shown in FIG. 13D, the inner diameters of the wafers 4 at the cutting end position are gradually increased, and the adjacent wafers 24 are eventually cut off from each other at the cutting end position. The wafers 24 thus cut from each other are received and stored in the respective receiving openings of the jig 52.

In FIG. 14, the vertical axis shows the case where there is no vibration in the front-rear direction of the table 20 and the case where there is vibration, and the horizontal axis shows the traveling distance of the wire 18. The wire 18 has a total length of 150 km and a mileage of 120 km.
Until then, the table 20 is lowered in the wafer cutting mode. In this case, the table 20 has no vibration. When the traveling distance reaches 120 km, the table 20 is shifted to the wafer cutting mode and the table 20 is vibrated. FIG.
Until the point, there is no vibration at the table drop corresponding to FIG.
After the point b, the table descent is stopped and there is vibration. The point b corresponds to FIG. 13b, the point c corresponds to FIG. 13c, and the point d corresponds to FIG. 13d.

In the fourth embodiment, the same effects as those of the above embodiment can be obtained.

Fifth Embodiment A fifth embodiment of the present invention will be described with reference to FIGS. In the fifth embodiment, the table 20 of the multi-wire saw 14 fixed to the fixed base has a rotary vibration function. In the wafer cutting mode, the table 20 is rotated and vibrated so that the fixed base 2 is rotated and vibrated. Is used to cut the wafer 24. The wire 18 used for this has a constant diameter and a total length of 150 k.
m. First, as shown in FIG. 15A, when the wafer 24 is cut with the wire 18, the arrow A in FIG.
As shown in FIG.
The wire 18 that is cut out and enters into the table 20 rotates and vibrates as indicated by an arrow around the center O point, which is the center of each of the axial length L1 and the widthwise length L2 of the table 20. The wafer 24 is cut. FIG. 15C shows a state in which the wafer 24 is cut by the rotational vibration. The cut wafer 24 is shown in FIG.
As shown by 5d, it is stored in the receiving jig 52 in the same manner as described above.

Referring to FIG. 16, the vertical axis indicates the presence or absence of rotational vibration of table 20, and the horizontal axis indicates the traveling distance of wire 18. Up to a travel distance of 120 km, the table 20 is lowered and the wafer 24 is cut out. In this mode, there is no rotational vibration of the table 20. In the cutting mode, the lowering of the table 20 is stopped, and the table 20 rotates and
4 will be performed. Point a in FIG.
a, point b in FIG. 15b, point c in FIG. 15c, point d in FIG.
d.

In the fifth embodiment, the same effects as those of the above embodiments can be obtained.

Sixth Embodiment A sixth embodiment of the present invention will be described with reference to FIGS. In the sixth embodiment, the abrasive grains 62 having a small diameter, for example, 10 μm, are attached to the wire 24 to cut the wafer 24, and when the cutting is completed, the abrasive grains 62 are changed to a large diameter, for example, 130 μm.
Then, the wafer 24 is cut by the abrasive grains 62 having the large diameter. That is, the table 20 is moved down, and the wire 18 on which the small-diameter abrasive grains 62 are adhered is run to cut the wafer 24 as shown in FIG. 17A. When the grinding of the large diameter abrasive grains 62 is adhered to the wire 18 and the wire 18 is caused to travel while the descent of the table 20 is stopped after the end of the cutting, the wafer 24 is cut by the abrasive grains 62 of the large diameter. Will be. FIG. 17B shows a state in the middle of the cutting, and FIG. 17C shows a state in which the cutting is performed. Thus, the cut wafers 24 are individually stored in the respective receiving openings of the receiving jig 52 as shown in FIG. 17C.

In FIG. 18, the vertical axis shows the abrasive grain diameter, and the horizontal axis shows the wire running distance. Until the wire 18 travels 120 km, the abrasive grains 62 having a diameter of 10 μm are adhered to the wire 18 and the table 20 is lowered, and then the wire 18 is run, as shown in FIG.
Is cut out. When the cutting is completed, the lowering of the table 20 is stopped and the diameter of the wire 18 is reduced to 130 μm.
Change to the attachment of the abrasive grains 62 of m. Thereby, the wafer 24 is cut. The point a in FIG. 18 is a part of the wafer 24 cut with the abrasive grains 62 having a small abrasive particle diameter in FIG. 17a, the point b is in the middle of cutting the wafer 24 with the abrasive grains 62 having a large abrasive particle diameter in FIG. 17c indicates the end of cutting the wafer 24.

According to the sixth embodiment, the same effects as those of the above embodiment can be obtained.

[0042]

As described above, in the present invention according to any of the claims, since the wafer cut out from the block is mechanically cut and separated, the wafer is separated from the discarded plate as in the prior art. This eliminates the need for a discard plate, eliminates the need for an aqueous acetic acid solution to separate from the discard plate, and eliminates the lengthy separation work required to separate with acetic acid. Not only the above yield can be improved, but also the effect of improving the working environment and eliminating the need for a facility for treating acetic acid waste liquid can be achieved, and the cost can be reduced.

[Brief description of the drawings]

FIG. 1 is a perspective view of a work according to a first embodiment of the present invention.

FIG. 2 is a perspective view of a wire used in the first embodiment.

FIGS. 3A and 3B are diagrams for explaining wafer cutting and cutting in the first embodiment, where FIG. 3A is a diagram illustrating a wafer cutting mode, FIG. 3B is a diagram illustrating a wafer cutting mode,
(C) is a diagram showing a wafer storage mode.

FIG. 4 is a diagram showing a relationship between a wire diameter and a work traveling distance in the first embodiment.

FIG. 5 is a perspective view of a wire used in the second embodiment.

FIGS. 6A and 6B are views for explaining wafer cutting and cutting in the second embodiment, wherein FIG. 6A is a diagram showing a wafer cutting mode, FIG. 6B is a diagram showing a wafer cutting mode,
(C) is a diagram showing a wafer storage mode.

FIG. 7 is a diagram showing a relationship between the presence / absence of abrasive particles attached and a work traveling distance in the second embodiment.

FIG. 8 is a perspective view of a wire used in the third embodiment.

9A and 9B are diagrams for explaining wafer cutting and cutting in the third embodiment, where FIG. 9A is a diagram illustrating a wafer cutting mode, FIG. 9B is a diagram illustrating a wafer cutting mode,
(C) is a diagram showing a wafer storage mode.

FIG. 10 is a diagram showing a relationship between a wire angle and a work traveling distance in a third embodiment.

FIG. 11 is a front view of a wire rotation mechanism according to the third embodiment.

FIGS. 12A and 12B are cross-sectional views of FIG. 11, wherein FIG. 12A is a cross-sectional view along the line AA, and FIGS. 12B and 12C are cross-sectional views along the line BB.

13A and 13B are diagrams for explaining wafer cutting, table longitudinal vibration, wafer cutting, and wafer storage in the fourth embodiment, where FIG. 13A is a diagram illustrating a wafer cutting mode;
(B) is a diagram showing a table longitudinal vibration mode, (c) is a diagram showing a wafer cutting mode, and (d) is a diagram showing a wafer storage mode.

FIG. 14 is a diagram illustrating a relationship between presence / absence of longitudinal vibration of a table and a wire traveling distance in a fourth embodiment.

FIGS. 15A and 15B are views for explaining wafer cutting, table rotation vibration, wafer cutting, and wafer storage in the fifth embodiment, and FIG. 15A is a diagram showing a wafer cutting mode;
(B) is a diagram showing a table rotation vibration mode, (c) is a diagram showing a wafer cutting mode, and (d) is a diagram showing a wafer storage mode.

FIG. 16 is a diagram showing the relationship between the presence or absence of rotational vibration of the table and the wire travel distance in the fifth embodiment.

FIGS. 17A and 17B are diagrams for explaining wafer cutting and cutting in the sixth embodiment, where FIG. 17A is a diagram illustrating a wafer cutting mode, FIG. 17B is a diagram illustrating a wafer cutting mode,
(C) is a diagram showing a wafer storage mode.

FIG. 18 is a diagram showing a relationship between an abrasive grain size and a wire traveling distance in the sixth embodiment.

FIG. 19 is an exploded perspective view of a conventional work.

20 is a perspective view of the work of FIG. 19 and a multi-wire saw.

FIG. 21 is a perspective view showing a state in which a wafer has been cut out between the work and the multi-wire saw in FIG. 19;

FIG. 22 is a perspective view showing a state where a wafer is cut out from the work of FIG. 19 and separated.

FIG. 23 is a detailed perspective view of a work and a multi-wire saw.

FIG. 24 is a front view of a work cut out by a multi-wire saw.

[Explanation of symbols]

 2 Fixed base 10 Semiconductor block 18 Wire 20 Table 24 Wafer 26 Supply spool 32, 34 Wire guide 42 Take-up spool 52 Receiving jig

Claims (6)

(57) [Claims] 1. A semiconductor block is set on a table of a multi-wire saw via a fixing table, and a plurality of wafers are cut from the semiconductor block by the wires of the multi-wire saw before cutting. A method of cutting and cutting a semiconductor block, wherein the cutting is performed by gradually increasing the size. 2. A semiconductor block is set on a table of a multi-wire saw via a fixing table, and a plurality of wafers are cut from the semiconductor block by the wires of the multi-wire saw before cutting. And cutting the semiconductor block. 3. A semiconductor block is set on a table of a multi-wire saw via a fixing table, and the wire of the multi-wire saw is formed into a flat shape. In cutting out a plurality of wafers from the semiconductor block, the length of the wire is reduced. An axial end face is cut out in a cutting direction, and in cutting of a plurality of cut wafers, a long axis end face of the wire is cut in a wafer cutting direction. Cutting and cutting method. 4. A semiconductor block is set on a table of a multi-wire saw via a fixing table, and a plurality of wafers are cut out from the semiconductor block by the wires of the multi-wire saw before cutting the table in the front-back direction. A semiconductor block, wherein the wafer is cut by vibrating the semiconductor block. 5. A semiconductor block is set on a table of a multi-wire saw via a fixing table, and a plurality of wafers are cut out from the semiconductor block by the wires of the multi-wire saw before cutting the table. A method of cutting and cutting a semiconductor block, wherein the wafer is cut by causing the wafer to cut. 6. A semiconductor block is set on a table of a multi-wire saw via a fixing base, and when a plurality of wafers are cut from the semiconductor block by the wire of the multi-wire saw, abrasive grains having a predetermined diameter are attached to the wire. The cutting is performed in a state where the cutting is performed, and in cutting the plurality of cut wafers, the cutting is performed in a state where the abrasive having a diameter larger than the abrasive is attached to the wire. Cutting and cutting method.