JP3093025B2 - Manufacturing method of semiconductor light emitting device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor light emitting device. More specifically, it is possible to reduce the size of a device required for measurement in a semiconductor light emitting element inspection process,
The present invention relates to a method for manufacturing a semiconductor light emitting device capable of shortening a measurement time and improving productivity.

[0002]

2. Description of the Related Art Conventionally, in a manufacturing process of a light emitting device or the like, a method of evaluating the performance of an element emitting an electromagnetic wave (light) from an end face perpendicular to a wafer, such as the wavelength, spread, strength, and coherence of light. The following method has been adopted.

[0003] That is, as shown in FIG.
Is affixed onto a stretchable tape sheet 32, and then the wafer 31 is cut or divided as shown in FIG. 8 to form a plurality of strip-shaped wafers 31a. Then, the strip-shaped wafer 31a to be measured is picked up and moved to a measurement stage, and electrodes are applied to the upper and lower surfaces of the wafer to conduct electricity, thereby measuring the performance of the element. In this case,
Insulation between elements is formed between the individual elements in the strip-shaped wafer 31a by inserting a cutting line to the pn junction, for example, so that no electricity flows between the elements. Further, a pattern made of a metal film formed on the upper surface of each element is also formed independently of the pattern of an adjacent element, so that each element of the strip-shaped wafer can be measured simultaneously and independently.

[0004] In some cases, after the wafer is divided into strip-shaped wafers, the wafer is further divided into element levels, and each element is moved to a measurement stage to evaluate the performance.

[0005]

However, in the above-described method, after the wafer is cut, an element or a strip-shaped wafer to be measured is picked up, extracted from a tape sheet, moved to a measurement stage, and then moved to the measurement stage. It is necessary to conduct electricity to the electrodes on the lower surface and measure the performance. And to increase the measurement speed,
It is necessary to increase the speed of the machine for extracting the element or the strip-shaped wafer, but there is a limit in increasing the speed because the device is separated from the adhesive tape sheet and moved to the measurement stage. Furthermore, the size of the entire measuring device cannot be reduced because of the extraction device.

The present invention has been made in view of the above circumstances, and has as its object to provide a method of manufacturing a semiconductor light emitting device having an inspection step in which the above-mentioned disadvantages of the prior art are eliminated. That is,
An object of the present invention is to provide a method for manufacturing a semiconductor light emitting device, which can reduce the size of a measuring device in a test process and improve productivity.

[0007]

The method of manufacturing a semiconductor light emitting device of the present invention comprises the steps of (a) adhering a wafer having a plurality of semiconductor light emitting devices onto a stretchable tape sheet; (C) stretching the tape sheet parallel to one of the cutting directions to form a plurality of bar-shaped wafers, and (d) maintaining the stretched state and further perpendicular to the stretching direction. Stretching in the direction, and (e) setting the tape sheet on a measuring device in a state where each device is stretched so as to be separated by a predetermined distance, wherein the measuring device is in contact with the upper and lower surfaces of the device. A plurality of light-receiving elements capable of detecting an electromagnetic wave emitted from the element when the element comes to a position sandwiched between the electrodes. And

[0008] The method of manufacturing a semiconductor light emitting device according to claim 2 includes the steps of: (a) forming a wafer having a plurality of semiconductor light emitting devices;
A plurality of linear or belt-shaped conductors are provided so as to be parallel to each other, or are adhered on a stretchable tape sheet or a stretchable conductive tape sheet coated with a conductive substance on the entire surface. (B) cutting the wafer so that the light-emitting surface of each light-emitting element is exposed and forming a plurality of bar-shaped wafers; (c) separating the tape sheet from each other by a predetermined distance between the bar-shaped wafers In a state of being stretched in a direction perpendicular to the cutting direction, setting on a measuring device, the measuring device includes a plurality of electrodes that can be in contact with the upper surface of the element constituting the bar-shaped wafer, And, the bar-shaped wafer is provided with a plurality of light-receiving elements capable of detecting electromagnetic waves emitted from each element when it comes to a position sandwiched between the plurality of electrodes and the conductor, furthermore, the bar-shaped wafer Upper electrode side of the device is characterized by comprising electrically insulated from each other.

In the present specification, the light receiving element means not only a photodiode or a phototransistor but also any element capable of detecting light, such as CdS, a phototube, a CCD, and a color sensor.

[0010]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, an inspection process (hereinafter, simply referred to as a measuring method) in a method for manufacturing a semiconductor light emitting device of the present invention will be described with reference to the accompanying drawings.

First, as shown in FIG. 1, a wafer 1 on which a pattern has been formed is attached onto a stretchable tape sheet 2. As the tape sheet 2, it is preferable to use a tape sheet 2 made of an extensible material, such as a vinyl chloride film, so that sufficient stretching is possible. The wafer 1 is a light emitting element such as a semiconductor laser or an LED, and has a plurality of elements that emit electromagnetic waves (light) from an end surface perpendicular to the wafer or a plurality of elements that emit electromagnetic waves (light) from the front side of the wafer 1. ing.

Next, the wafer 1 is cut or divided into respective element sizes. This cutting can be performed using a diamond cutter or the like.

After cutting, the tape sheet 2 is stretched in parallel with one of the cutting directions, for example, in the direction of arrow A in FIG. 1 to form a plurality of bar-shaped wafers. Then, in the stretched state, it is stretched in the direction perpendicular to the stretching direction, for example, in the direction of arrow B in FIG.

In this manner, the tape sheet 2 is set on the measuring device 3 in a state where the tape sheet 2 is stretched so that each element is separated by a predetermined interval.

As shown in FIG. 2, the measuring device 3 has a plurality of pairs of electrodes 4 that can contact the upper and lower surfaces of the element 5. The electrode 4 is a first electrode capable of contacting the upper surface of the element 5
4a and a second electrode 4b that can come into contact with the lower surface of the element 5. Although FIG. 2 shows only a pair of electrodes, a plurality of similar electrodes are actually arranged in a direction perpendicular to the paper surface. . At this time, if the tape sheet is formed of a conductive film or a tape sheet coated with a conductive material on the entire surface is used, one second electrode 4b can be used as well.

When the element 5 is energized through the two electrodes, the element 5 emits an electromagnetic wave from its end face 6. This electromagnetic wave is disposed opposite to the end face 6 of each element 5. The light is detected by a light receiving element 7 such as CdS, a photoelectric tube, a CCD, and a color sensor. When the measurement of a certain element row is completed, the tape sheet 2 moves by the rotation of the roller 8, reaches the predetermined measurement position where the next element row is sandwiched between the two electrodes, and the same measurement is performed. .

When a film made of a conductive resin is used as the tape sheet 2, the second electrode 4b is arranged so as to be in contact with the back surface of the film. On the other hand, when a non-conductive film is used, it is arranged so as to penetrate the film and directly contact the lower surface of the element. As described above, the term “contactable” in the present specification is a concept including both a case where the contact can be made indirectly via the tape sheet and a case where the contact can be made directly through the tape sheet.

FIG. 3 shows a modification of the device shown in FIG. 2. Unlike the device shown in FIG. 2, in which light emission from two directions is measured simultaneously, only light emission from one direction is obtained. It is a type of device that measures. Usually, the emission characteristics from the left and right are almost the same, so this device can be applied when it is sufficient to measure the performance from only one direction.

Next, another embodiment of the measuring method of the present invention will be described.

In the method described with reference to FIGS. 1 to 3, it was necessary to stretch the tape sheet in two directions.
In the method described below, measurement is possible only by stretching in one direction.

First, as shown in FIG. 4, a wafer 11 having a plurality of semiconductor light emitting elements is placed on a tape sheet 12 provided with a plurality of linear or band-shaped conductors 20 provided in parallel with each other. The light-emitting element is attached on the upper surface so that the light-emitting end face is parallel to the conductor. As the linear or band-shaped conductor 20, a metal wire or a conductive substance such as A
What applied the g paste etc. on the tape sheet 12 can be used. When a conductive material is applied, the material is not limited to a line or a band, but may be applied to the entire surface, or the tape sheet itself may be conductive. FIG. 5 is an explanatory cross-sectional view taken along line II of FIG.

Next, the wafer 11 is cut into a plurality of bar-shaped wafers 21 each having one conductor. Then, the tape sheet 12 is stretched in a direction perpendicular to the cutting direction so that each bar-shaped wafer 21 is separated by a predetermined interval, and the tape sheet 12 is set on the measuring device 13 in the stretched state.

As shown in FIG. 6, the measuring device 13 includes a plurality of electrodes 14 that can come into contact with the upper surfaces of the elements constituting the bar-shaped wafer 21. When the elements are energized, each element emits an electromagnetic wave from its end face 16. In this case, inter-element insulation is formed between the individual elements in the bar-shaped wafer 21 by inserting a cutting line extending beyond the pn junction to the epitaxial layer, so that a structure in which electricity does not flow mutually is obtained. ing. Further, a pattern made of a metal film formed on the upper surface of each element is formed independently of a pattern of an adjacent element.

Electromagnetic waves emitted from the end face 16 of the element are detected by a plurality of light receiving elements 17 arranged opposite to the end face 16. In FIG. 6, the light receiving element is arranged only on one end face side for simplicity, but it is of course possible to arrange the light receiving element also on the other end face side to measure electromagnetic waves simultaneously in two directions.

In the above-described embodiment, the light emitting element emitting light from the end surface which is a cut surface has been described. However, even if the light emitting element emits light from the front side of the semiconductor wafer, the present invention can be realized by disposing the light receiving element on the upper surface. Can be similarly applied.

[0026]

As described above, according to the manufacturing method of the present invention, in the inspection process, the operation of picking up the element or the element array from the tape sheet is unnecessary, and the measurement is performed by omitting the apparatus for the operation. The size of the entire device can be reduced. In addition, the measurement time can be shortened and the productivity can be improved.

[Brief description of the drawings]

FIG. 1 is an explanatory plan view showing a state in which a wafer is stuck on a tape sheet.

FIG. 2 is an explanatory sectional view of an example of an apparatus used in the measuring method of the present invention.

FIG. 3 is an explanatory sectional view of another example of the apparatus used in the measuring method of the present invention.

FIG. 4 is an explanatory plan view showing a state in which a wafer is stuck on a tape sheet provided with a conductor.

FIG. 5 is a sectional view taken along line II of FIG. 4;

FIG. 6 is an explanatory diagram of still another example of the device used in the measuring method of the present invention.

FIG. 7 is an explanatory plan view showing a state in which a wafer is stuck on a tape sheet.

FIG. 8 is an explanatory plan view showing a state in which the wafer is cut so as to form a strip-shaped wafer.

[Explanation of symbols]

 1,11 Wafer 2,12 Tape sheet 3,13 Measuring device 4,14 Electrode 5 element 7,17 Light receiving element

──────────────────────────────────────────────────続 き Continuation of front page (56) References JP-A-61-214587 (JP, A) JP-A-60-116181 (JP, A) JP-A-60-25241 (JP, A) JP-A 63-214 153880 (JP, A) JP-A-53-106570 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) H01L 33/00 H01L 21/66 H01S 5/00-5/50

Claims (2)

(57) [Claims] (A) affixing a wafer having a plurality of semiconductor light-emitting elements on a stretchable tape sheet; (b) cutting the wafer to the size of each element; (c) the tape sheet Is stretched in parallel to one of the cutting directions to form a plurality of bar-shaped wafers, (d) further stretched in a direction perpendicular to the stretching direction while maintaining this stretched state, (e) the tape sheet, In a state where the element is stretched so as to be separated by a predetermined distance, setting is performed on a measuring device, the measuring device includes an electrode capable of contacting an upper surface and a lower surface of the element, and the element includes the electrode. 1. A method for manufacturing a semiconductor light emitting device, comprising: an inspection step of providing a plurality of light receiving elements capable of detecting an electromagnetic wave emitted from the element when the element comes to a position sandwiched therebetween. 2. (a) A wafer having a plurality of semiconductor light emitting elements is provided such that a plurality of linear or band-shaped conductors are parallel to each other, or a conductive substance is applied to the entire surface. (B) cutting the wafer so that the light emitting surface of each light emitting element is exposed and a plurality of bar-shaped wafers are formed. (C) in a state where the tape sheet is stretched in a direction perpendicular to the cutting direction so that each bar-shaped wafer is separated by a predetermined distance,
Setting on a measuring device, the measuring device includes a plurality of electrodes capable of contacting an upper surface of an element constituting the bar-shaped wafer, and the bar-shaped wafer includes a plurality of electrodes and the conductive material. The bar-shaped wafer is provided with a plurality of light receiving elements that can detect an electromagnetic wave emitted from each element when it comes to a position sandwiched between the body, and further, the upper electrode side of each element of the bar-shaped wafer is electrically insulated from each other. A method for manufacturing a semiconductor light emitting device, comprising: