JP3074852B2 - Thin film forming equipment - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film forming apparatus for forming a thin film by a combination of plasma CVD and ion beam irradiation.

[0002]

2. Description of the Related Art FIG. 3 shows a conventional example of this type of thin film forming apparatus. This apparatus has a predetermined degree of vacuum (for example, 10 ⁻⁴ Torr).
The microwave 14 is introduced into the vacuum vessel 2 held in the vacuum vessel 2 to generate plasma (not shown) by microwave discharge, thereby activating the reaction gas 10 introduced into the vacuum vessel 2 and A thin film is formed on the surface of the substrate 6 by forming a thin film on the surface (this is called plasma CVD) and irradiating the surface of the substrate 6 being formed with an ion beam 24 extracted from the ion source 16. It is configured. 4 is a holder for holding the substrate 6, 8 is a gas introduction port, and 12 is a microwave introduction window. Ion source 1
6 is provided with a plasma generation unit 18 for generating a plasma 20 and an extraction electrode system 22 for extracting an ion beam 24 by the action of an electric field therefrom.

[0003] By combining plasma CVD and ion beam irradiation in this manner, a chemical reaction can be promoted by utilizing the energy of the ion beam 24, whereby a thin film can be formed at a low temperature. .

[0004]

However, in the above-mentioned thin film forming apparatus, the plasma generation region by microwave discharge and the direction of ion beam irradiation are limited. However, although a thin film can be formed uniformly, there is a problem that a thin film cannot be uniformly formed in three dimensions on the surface of a three-dimensionally structured base.

Accordingly, an object of the present invention is to provide an apparatus for forming a thin film by a combination of plasma CVD and ion beam irradiation, and a main object of the present invention is to provide a thin film forming apparatus capable of forming a three-dimensional thin film. .

[0006]

In order to achieve the above object, a thin film forming apparatus according to the present invention comprises a vacuum vessel which is evacuated to a vacuum and into which a reaction gas is introduced, and a base housed in the vacuum vessel. A plurality of ion sources arranged to surround and irradiate the substrate with an ion beam,
It is characterized by comprising a plurality of antennas for high-frequency or microwave radiation arranged so as to be located in the vacuum vessel and between the ion sources, and a substrate rotating mechanism for rotating the substrate in the vacuum container. .

[0007]

According to the above construction, a thin film can be formed on a substrate by plasma CVD and ion beam irradiation can be performed from a plurality of directions, and the substrate can be rotated. Will be possible.

[0008]

FIG. 1 is a longitudinal sectional view showing a thin film forming apparatus according to an embodiment of the present invention. FIG. 2 is a cross-sectional view of the device of FIG.

This thin film forming apparatus is evacuated to a vacuum by a vacuum exhaust device (not shown) and a gas inlet 42
And a vacuum vessel 32 into which a required reaction gas 44 is introduced. In this embodiment, in this vacuum container 32,
A cylindrical and rotary holder 34 for holding a large number of substrates 40
Is rotated by an external motor 38 via a rotary shaft 36 as shown by an arrow A, for example, thereby constituting a substrate rotating mechanism.

[0010] The base 40 is written with a tool such as a drill or a hob in mind in the illustrated example, but is not limited to a specific one.

[0011] The vacuum vessel 32 is provided so as to surround the substrate 40 accommodated therein, that is, in this example, a holder 34 is provided.
, A plurality of (four in this example) vertically long ion sources 46 are attached. Each ion source 4
6 includes a plasma generating section 48 for generating a plasma 50 and an extraction electrode system 52 for extracting an ion beam 54 by the action of an electric field therefrom. The extracted ion beam 54 is directed toward the base 40 attached to the holder 34. Can be irradiated. However, the configuration of each ion source 46 is not limited to that shown in the illustrated example.

Further, inside the vacuum vessel 32, four vertically long antennas 56 for radiating high frequency or microwave are provided.
Are arranged between the respective ion sources 46. Each of the antennas 56 is connected via a matching circuit 58 to
High frequency power is supplied from the high frequency power supply 60. However, microwaves may be supplied to each antenna 56 using a microwave power supply instead of the high frequency power supply 60. Further, the shape and the like of each antenna 56 are not limited to those shown in the illustrated example.

An operation example of the thin film forming apparatus will be described.
The inside of the vacuum vessel 32 is evacuated and a required reaction gas 44 is introduced from a gas inlet 42 to maintain the inside of the vacuum vessel 32 at a predetermined degree of vacuum (for example, on the order of 10 ^-4 Torr). While rotating the holder 34 and the base 40 attached thereto as shown by the arrow A,
When high-frequency power (or microwave power) is supplied from the high-frequency power supply 60 (or microwave power supply) to each antenna 56, high-frequency discharge (or microwave discharge)
A plasma is generated around each antenna 56, whereby the reaction gas 44 introduced into the vacuum chamber 32 is activated, and a thin film is formed on the surface of the base 40. At the same time, an ion beam 54 is extracted from each ion source 46 and irradiated onto the substrate 40 during film formation.

By combining such plasma CVD and ion beam irradiation, the chemical reaction can be promoted by utilizing the energy of the ion beam 54, whereby a thin film can be formed at a low temperature.
Further, by using an ion beam 54 composed of ions that react with a film formed by plasma CVD,
Both compound films can also be formed.

For example, silane (Si
By using a H ₄ ) gas and a silicon ion beam or an inert gas ion beam as the ion beam 54, a silicon film can be formed on the surface of the substrate 40. Alternatively, a diborane (B ₂ H ₆ ) gas is used as the reaction gas 44 and a nitrogen ion beam is used as the ion beam 54, whereby a boron nitride (BN) film can be formed on the surface of the base 40.

In addition, in this thin film forming apparatus, film formation by plasma CVD and ion beam irradiation from a plurality of directions (four directions in this example) can be performed, and the substrate 40 can be rotated. Thus, a thin film can be uniformly formed in three dimensions even on a substrate having a three-dimensional structure.

The introduction of the reaction gas 44 into the vacuum vessel 32 may be performed through the gas inlet 42 as in this embodiment, or the ion source gas introduced into the ion source 46 may be introduced into the vacuum vessel 32. The outflow may be used, or both may be used in combination.

Depending on the shape of the substrate, for example, when the substrate itself has a cylindrical shape, the substrate is directly rotated in the vacuum vessel 32 by the rotating shaft 36 and the motor 38 without using the holder 34. You may make it do. Further, a substrate rotating mechanism may be provided that rotates (spins), revolves, or performs both rotations in the vacuum chamber 32.

[0019]

As described above, according to the present invention, film formation by plasma CVD and ion beam irradiation can be performed from a plurality of directions, and the substrate can be rotated. As a result, a thin film can be uniformly formed in three dimensions even on a substrate having a three-dimensional structure.

[Brief description of the drawings]

FIG. 1 is a longitudinal sectional view showing a thin film forming apparatus according to one embodiment of the present invention.

FIG. 2 is a cross-sectional view of the device of FIG.

FIG. 3 is a longitudinal sectional view showing an example of a conventional thin film forming apparatus.

[Explanation of symbols]

 32 Vacuum container 34 Holder 36 Rotation axis 38 Motor 40 Substrate 44 Reaction gas 46 Ion source 54 Ion beam 56 Antenna

Continuation of the front page (58) Field surveyed (Int. Cl. ⁷ , DB name) C23C 16/00-16/56 H01L 21/205 H01L 21/31 JICST file (JOIS)

Claims (1)

(57) [Claims] 1. A vacuum vessel, which is evacuated to a vacuum and into which a reaction gas is introduced, and a plurality of vacuum vessels arranged to surround a substrate housed in the vacuum vessel and irradiating the substrate with an ion beam. An ion source, a plurality of antennas for high-frequency or microwave radiation arranged in the vacuum vessel so as to be located between the ion sources, and a substrate rotating mechanism for rotating the substrate in the vacuum container. A thin film forming apparatus characterized by the above-mentioned.