JP2003124193A - Microwave plasma processor and microwave plasma processing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a microwave plasma processor which can generate uniform plasma into a container even if pressure in the container is dropped, and the type of processing gas, pressure in the container and supply power are changed. SOLUTION: The processor is provided with the container where a member to be processed is arranged, a gas supply pipe for supplying processing gas into the container, dielectric windows fitted to one face of the container, a waveguide arranged outside one face of the container including the dielectric windows, and a microwave power source for introducing a microwave into the waveguide. The dielectric windows are fitted to a plurality of openings disposed on one face of the container. Microwave radiating parts are opened to the parts of the waveguides positioned near one face of the container in accordance with a plurality of dielectric windows.

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention relates to a microwave plasma processing apparatus and a microwave plasma processing method.

[0002]

2. Description of the Related Art As a conventional microwave plasma processing apparatus, a vacuum container in which a member to be processed is arranged, a processing gas supply pipe connected to the vacuum container, and an opening in the center of the upper wall of the vacuum container. A disk-shaped dielectric window attached to the waveguide, a waveguide arranged on the upper wall of the vacuum container including the dielectric window, and a microwave power source for introducing microwaves into the waveguide. And a structure with.

A method of ashing a member to be processed, for example, a semiconductor wafer having a resist pattern used as a mask for ion implantation on the surface thereof, using the above microwave plasma processing apparatus will be described. First, a semiconductor wafer is placed in a vacuum container, oxygen as a processing gas is supplied into the vacuum container through a gas supply pipe, and the inside of the vacuum container is made to have a desired degree of vacuum. Subsequently, microwaves are introduced from the microwave power source from the waveguide through the microwave radiating portion and the dielectric window into the vacuum vessel, and oxygen plasma is generated to ash and remove the resist pattern on the semiconductor wafer surface. To do.

However, in such a microwave plasma processing apparatus, there is a problem that an ashing residue is generated when ashing the resist pattern after being used as a mask for ion implantation.

That is, the resist pattern, which has been used as a mask for ion implantation on the semiconductor wafer as described above, is altered during ion implantation and is not sufficiently ashed by the action of only active oxygen in oxygen plasma. Sufficient ashing of the resist pattern is performed only by interaction with energy.

On the other hand, in the conventional microwave plasma processing apparatus, microwaves are introduced into the vacuum container through one dielectric window to generate plasma, so that a uniform plasma is generated in the vacuum container. It is necessary to increase the internal pressure. As a result, the improvement of the irradiation energy of oxygen ions in the plasma, which is achieved by setting the pressure inside the vacuum container to be low, is sacrificed.

Therefore, in the conventional microwave plasma processing apparatus, it is necessary to increase the pressure in the vacuum container in order to generate uniform plasma in the vacuum container, and the irradiation energy of oxygen ions in the plasma becomes low, so that the resist When applied to pattern ashing, ashing residues are generated due to the alteration of the resist pattern. vice versa,
When the pressure in the vacuum container is lowered to increase the irradiation energy of oxygen ions in the plasma, the generated plasma becomes non-uniform, which increases the ashing time,
If the ashing time is short, there is a problem that residues are generated.

When the resist pattern formed on the Low-K film of the semiconductor wafer is ashed in oxygen plasma, oxygen ions in the plasma are transferred to the surface of the Low-K film for the purpose of surface modification of the Low-K film. It is desired to irradiate.

However, in the conventional microwave plasma processing apparatus, it is necessary to sacrifice the irradiation energy of oxygen ions in the plasma to set a high pressure in order to generate a uniform plasma in the vacuum container as described above. ,
When applied to the ashing of the resist pattern on the Low-K film, it becomes difficult to achieve sufficient surface modification of the Low-K film.

Further, in the microwave plasma processing apparatus,
When a plurality of coating films are removed by etching using one resist pattern as a mask, it is necessary to change the type of processing gas, the pressure in the vacuum container, and the input power when the etching target changes during the etching. However, in the conventional microwave plasma processing apparatus, since microwaves are introduced into the vacuum container through one dielectric window to generate plasma, the plasma generation region is changed by changing the above-mentioned various parameters to make the coating uniform. Difficult to etch.

[0011]

SUMMARY OF THE INVENTION According to the present invention, even if the pressure in the vacuum container is lowered, or the type of processing gas, the pressure in the vacuum container and the input power are changed, a uniform plasma can be generated in the vacuum container. The present invention is intended to provide a microwave plasma processing apparatus that can generate the above.

According to the present invention, even if the pressure in the vacuum container is lowered, or the type of processing gas, the pressure in the vacuum container and the input power are changed, uniform plasma is generated in the vacuum container to be processed. An object of the present invention is to provide a microwave plasma processing method capable of uniformly processing a member.

[0013]

A microwave plasma processing apparatus according to the present invention comprises a container in which a member to be processed is placed,
A gas supply pipe for supplying a processing gas into the container,
A dielectric window attached to one surface of the container, and a waveguide arranged outside the one surface of the container including the dielectric window,
A microwave power source for introducing microwaves into the waveguide, the dielectric window is attached to each of a plurality of openings provided on one surface of the container, and the microwave radiation unit, It is characterized in that a portion of the waveguide located near one surface of the container is opened corresponding to the plurality of dielectric windows.

Another microwave plasma processing apparatus according to the present invention is provided with a container in which a member to be processed is arranged, a gas supply pipe for supplying a processing gas into the container, and one surface of the container. A dielectric window; a waveguide arranged outside one surface of the container including the dielectric window; and a microwave power source for introducing microwaves into the waveguide. Is attached to a plurality of ring-shaped openings provided on one surface of the container, and the microwave radiating portion corresponds to the dielectric window at a portion of the waveguide located near one surface of the container. It is characterized by being opened.

A microwave plasma processing method according to the present invention is a container in which a member to be processed is arranged, a gas supply pipe for supplying a processing gas into the container, and a dielectric attached to one surface of the container. A window, a waveguide arranged outside the one surface of the container including the dielectric window, and a microwave power source for introducing a microwave into the waveguide, and the dielectric window is The microwave radiating portion is attached to each of a plurality of openings provided on one surface of the container, and the microwave radiating portion is opened at a portion of the waveguide located near one surface of the container corresponding to the plurality of dielectric windows. A method of processing a member to be processed by a microwave plasma processing apparatus having a structure, wherein a member to be processed is arranged in the container, and a processing gas is supplied into the container through the gas supply pipe, The desired true The microwave source, the microwave is introduced into the container from the microwave power source through the waveguide, the microwave radiating portion and the plurality of dielectric windows, and plasma is generated to generate the plasma. It is characterized in that the member is processed.

In another microwave plasma processing method according to the present invention, a container in which a member to be processed is arranged, a gas supply pipe for supplying a processing gas into the container, and the container are attached to one surface of the container. A dielectric window; a waveguide arranged outside one surface of the container including the dielectric window; and a microwave power source for introducing microwaves into the waveguide. Is attached to a plurality of ring-shaped openings provided on one surface of the container, and the microwave radiating portion is opened at a portion of the waveguide located near one surface of the container corresponding to the dielectric window. A method of processing a member to be processed by a microwave plasma processing apparatus having the structure, wherein a member to be processed is arranged in the container, and a processing gas is supplied into the container through the gas supply pipe, To the desired degree of vacuum After that, microwaves from the microwave power source are introduced into the container from the waveguide through the microwave radiating portion and the dielectric window, and plasma is generated to process the member to be processed in the container. It is characterized by that.

[0017]

DETAILED DESCRIPTION OF THE INVENTION The present invention will be described in detail below with reference to the drawings.

FIG. 1 is a schematic sectional view showing a microwave plasma processing apparatus according to the present invention, FIG. 2 is a sectional view of an essential part of the processing apparatus shown in FIG. 1, and FIG. 3 is a sectional view taken along line III-III of FIG. Is.

The vacuum container 1 is in the form of a quadrangular prism, has a chamber 2 formed in a cylindrical shape from the top to the inside, and has a cylindrical side wall 1a and a lower wall 1b. The vacuum container 1 has a square plate-shaped upper wall (one surface) 1c attached to the upper opening. A columnar support 4 having a flow path 3 through which a cooling medium or a heating medium flows is installed on the lower wall 1b in the chamber 2 of the vacuum container 1. The disc-shaped electrode 5 is embedded in the upper portion of the support 4.
A holder 6 for holding a member to be processed is provided on the support base 4 including the electrode 5. For example, several hundred kH
A high frequency power source 7 for generating a high frequency of z to several hundred MHz is connected to the electrode 5 through a matching circuit 8 and ions in plasma described later are incident on a member to be processed held by the holder 6. It has the effect of controlling the energy when it is used.

For example, two gas supply pipes 9 for supplying the processing gas are connected to the opposite side walls 1a of the vacuum container 1 above the support 4. The gate valve 10 for loading and unloading the member to be processed is provided on the cylindrical side wall 1a of the vacuum container 1 corresponding to the vicinity of the upper portion of the support base 4.

The exhaust pipe 11 is connected to the lower side wall 1a of the vacuum container 1. The other end of the exhaust pipe 11 is passed through a pressure adjusting member 12 and an exhaust member 13 such as an exhaust pump.
Are linked to.

As shown in FIGS. 2 and 3, for example, six disk-shaped dielectric windows 14 made of quartz glass have openings 1 having stepped portions formed on the upper wall 1c of the vacuum container 1.
5 are attached respectively. The dielectric window 14 may be made of alumina.

A microwave radiating portion, for example, a circumferential angle of 30
Square plate 1 with six circular arc-shaped slits 16
2 and 3, the slits 16 are fixed on the upper wall 1c of the vacuum container 1 so that the slits 16 face the dielectric windows 14, respectively. The rectangular waveguide 18 has a circular opening 19 formed at the bottom of the front end, and a microwave power source 20 attached to the rear end thereof. This rectangular waveguide 1
8, the tuner 21 is interposed in the middle. The cylindrical waveguide 22 having an open bottom is provided on the upper wall 1 of the vacuum container 1.
It is arranged on the rectangular plate 17 of c and its upper part is connected to the circular opening 19 of the rectangular waveguide 18 through the coaxial line 23. The disk-shaped shielding member 24 is concentrically attached to the inner wall of the cylindrical waveguide 22 on the portion of the square plate 17 located in the cylindrical waveguide 22.
The outer peripheral edge of the disc-shaped shield member 24 and the cylindrical waveguide 2
An annular space 25 is formed between the two inner walls. In the annular space 25, the plurality of arcuate slits 16 are exposed.

A cavity resonator may be installed instead of the cylindrical waveguide.

Next, a method of processing the member to be processed by the above-mentioned microwave plasma processing apparatus will be described.

First, the member to be processed 26 is placed on the holder 6 attached to the support base 4 in the chamber 2 of the vacuum container 1. By operating the exhaust member 13 such as a vacuum pump, the gas in the chamber 2 of the vacuum container 1 is exhausted through the exhaust pipe 11. At the same time, the processing gas is supplied to the chamber 2 above the vacuum container 1 through the two gas supply pipes 9. When the pressure in the chamber 2 of the vacuum container 1 reaches a predetermined pressure, microwaves are introduced from the microwave power source 20 into the rectangular waveguide 18 through the tuner 21. This microwave
Further, it is introduced into the cylindrical waveguide 22 through the coaxial line 23 from the circular opening 19 at the tip of the rectangular waveguide 18. In this cylindrical waveguide 22, the microwave spreads from one point in the radial direction of the cylindrical waveguide 22 in a plane shape, is bent downward on the inner wall surface in a direction perpendicular to the plane, and is further formed into a disk shape. From the annular space 25 formed between the outer peripheral edge of the shielding member 24 and the inner wall of the cylindrical waveguide 22, a plurality of, for example, six arc-shaped slits 16 exposed in the space 25 are provided, which are opposed to the slits 16. Circular dielectric window 1
A discharge is generated through 4 and plasma is generated in the chamber 2 of the vacuum container 1. At this time, the microwave passes through the arcuate slit 16 to improve the discharge stability. Further, by attaching the six dielectric windows 14 to the circular openings 15 arranged concentrically on the upper wall 1c of the vacuum container 1, the chamber 2 of the vacuum container 1 can be installed.
It becomes possible to generate a uniform plasma even under a low pressure. By generating such uniform plasma in the chamber 2 of the vacuum container 1, it becomes possible to perform uniform plasma processing on the member 26 to be processed held by the holder 6.

As described above, according to the present invention, in the plasma processing of the member to be processed, even if the pressure in the vacuum container is lowered, or the type of the processing gas, the pressure in the vacuum container and the input power are changed, it is uniform. It becomes possible to generate plasma in the vacuum container. By applying such plasma treatment to ashing of a resist pattern used as a mask for ion implantation on a semiconductor wafer, the resist pattern can be satisfactorily removed without producing a resist residue.

In addition, the above-mentioned plasma treatment is Low-K.
By applying to the ashing of the resist pattern on the film, the resist pattern can be ashed well, and the ions in the plasma of the vacuum container can be irradiated to the Low-K film with high energy, so that the Low-K film surface is good. Can be modified to

Further, by applying the above-mentioned plasma treatment to the etching of a plurality of coatings using the resist pattern as a mask, each coating can be exposed to uniform plasma, so that each coating can be etched uniformly. become.

Further, at the time of the plasma treatment described above, a predetermined high frequency is applied to the electrode 5 connected to the holder 6 from the high frequency power source 7 through the matching circuit 8.
Since the surface of the member to be processed 26 held by the holder 6 is negatively charged, the energy when ions in the plasma generated in the chamber 2 of the vacuum container 1 are incident on the member to be processed 26. Can be increased to control its energy. As a result, it becomes possible to irradiate the member 26 to be processed with ions having energy suitable for plasma processing, and in particular, the above-mentioned Low-
It can be effectively applied to ashing of a resist pattern on the K film.

In the microwave plasma processing apparatus shown in FIGS. 1 to 3 described above, the dielectric window 14 attached to the upper wall 1c of the vacuum container 1 has a disk shape, but the invention is not limited to this. You may make it the shape shown in FIG. 4 and FIG. 5 demonstrated below.

That is, as shown in FIG. 4, a plurality of, for example, six dielectric windows 27 having elongated shapes in which two opposite sides are arcuate are concentric with the center of the upper wall 1c of the vacuum container 1. Elongated opening portion 28 having a step portion arranged in
It may be attached to each.

According to the structure shown in FIG. 4, the dielectric window 27 has the arc-shaped slit 16 as the microwave radiating portion.
As described above, the microwave power source 20 transmits microwaves through the rectangular waveguide 18, the circular opening 19, the coaxial line 23, and the cylindrical waveguide 22, and the arc-shaped slits are used. It is possible to generate more uniform plasma in the chamber 2 of the vacuum container 1 by passing through the dielectric windows 27 from 16 and introducing it into the chamber 2 of the vacuum container 1.

Further, as shown in FIG. 5, the ring-shaped dielectric window 29 is attached to the upper wall 1c of the vacuum container 1 at the ring-shaped opening 30 having a stepped portion arranged concentrically with respect to the center thereof. May be. The upper wall 1 of the vacuum container 1
In the rectangular plate 17 fixed on c, four arc-shaped slits 31 having a circumferential angle of about 85 ° are opened so as to face the ring-shaped dielectric window 29.

According to the structure shown in FIG. 5, the dielectric window 29 has a ring shape, and an arc slit facing the dielectric window 29 is a microwave radiating portion having a circumferential angle of about 85 °. Since 31 is opened, as described above, microwaves from the microwave power source 20 pass through the rectangular waveguide 18, the circular opening 19, the coaxial line 23, and the cylindrical waveguide 22, and each of the arc-shaped slits. 31 to ring-shaped dielectric window 2
By passing through 9 and being introduced into the chamber 2 of the vacuum container 1, it becomes possible to generate more uniform plasma in the chamber 2 of the vacuum container 1.

In the microwave plasma processing apparatus shown in FIGS. 1 to 3 and 4, the six dielectric windows 14,
Although 27 is attached to the upper wall 1c of the vacuum container 1, it is not limited to this. For example, 2 to 5 or 7 or 8 dielectric windows may be attached to the upper wall of the vacuum container.

[0037]

The preferred embodiments of the present invention will be described below.

Example 1 First, a semiconductor wafer (member to be processed) having a resist pattern formed on its surface after being used as a mask for ion implantation was prepared.

Next, the semiconductor wafer 26 is attached to the holder 6 attached to the support 4 in the chamber 2 of the vacuum container 1 in the microwave plasma processing apparatus shown in FIGS.
Was held. By operating an exhaust member 13 such as a vacuum pump, the gas in the chamber 2 of the vacuum container 1 is exhausted by an exhaust pipe 11
Exhausted through. At the same time, oxygen gas was supplied to the chamber 2 above the vacuum container 1 through the two gas supply pipes 9 to set the pressure inside the chamber 2 to 15 Pa. When the pressure in the chamber 2 of the vacuum container 1 became stable, microwaves were introduced from the microwave power source 20 into the rectangular waveguide 18 through the tuner 21. This microwave is further transmitted from the circular opening 19 at the tip of the rectangular waveguide 18 to the coaxial line 2
3 was introduced into the cylindrical waveguide 22. In this cylindrical waveguide 22, the microwave spreads from one point in the radial direction of the cylindrical waveguide 22 in a plane shape, is bent downward on the inner wall surface in a direction perpendicular to the plane, and is further formed into a disk shape. Between the outer peripheral edge of the shielding member 24 and the inner wall of the cylindrical waveguide 20, six arcuate slits 16 exposed from the annular space 25 to the space 25 are provided to face the slits 6.
A discharge was generated by passing through one circular dielectric window 14. As a result, uniform plasma was generated in the chamber 2 of the vacuum container 1 below the circular dielectric windows 16. The active oxygen atoms in the generated oxygen plasma reacted with the resist pattern on the surface of the semiconductor wafer 26 held by the holder 6 and were peeled off, so-called ashing was performed.

A frequency of 13.56 is applied to the electrode 5 connected to the holder 6 from a high frequency power source 7 through a matching circuit 8.
By applying a high frequency of MHz to negatively charge the surface of the semiconductor wafer 26 held by the holder 6, oxygen ions in the generated oxygen plasma enter the resist pattern on the surface of the semiconductor wafer 26 with high energy. As a result, the deteriorated portion of the resist generated during the ion implantation was ashed well.

When the surface of the semiconductor wafer was observed after such ashing of Example 1, the resist pattern was completely removed without producing a residue.

Example 2 First, Lo on a semiconductor wafer
A resist pattern was formed on the w-K film, and the Low-K film was selectively removed by etching using this resist pattern as a mask.

Next, the ring-shaped dielectric window 29 shown in FIG.
And a vacuum container 1 having an upper wall 1c to which a square plate 17 having four arc-shaped slits 31 is fixed.
The microwave plasma processing apparatus shown in FIGS. 1 and 2 in which the semiconductor wafer 2 is incorporated is prepared, and the semiconductor wafer 2 is mounted on a holder 6 attached to a support base 4 in a chamber 2 of the vacuum container 1.
6 was installed. By operating an exhaust member 13 such as a vacuum pump, the gas in the chamber 2 of the vacuum container 1 is exhausted by an exhaust pipe 11
Exhausted through. At the same time, oxygen gas was supplied to the chamber 2 above the vacuum container 1 through the two gas supply pipes 9 to set the pressure inside the chamber 2 to 15 Pa. When the pressure in the chamber 2 of the vacuum container 1 became stable, microwaves were introduced from the microwave power source 20 into the rectangular waveguide 18 through the tuner 21. This microwave is further transmitted from the circular opening 19 at the tip of the rectangular waveguide 18 to the coaxial line 2
3 was introduced into the cylindrical waveguide 22. In this cylindrical waveguide 22, the microwave spreads from one point in the radial direction of the cylindrical waveguide 22 in a plane shape, is bent downward on the inner wall surface in a direction perpendicular to the plane, and is further formed into a disk shape. The ring-shaped dielectric window 29 facing the slits 31 passes through the four circular arc-shaped slits 31 exposed from the annular space 25 between the outer peripheral edge of the shielding member 24 and the inner wall of the cylindrical waveguide 20. By doing so, discharge was made. As a result, an extremely uniform oxygen plasma was generated in the chamber 2 of the vacuum container 1 below the ring-shaped dielectric window 29. Active oxygen atoms in the generated oxygen plasma are
So-called ashing was performed in which the resist pattern on the surface of the semiconductor wafer 26 held by the holder 6 was reacted and peeled off.

A frequency of 13.56 is applied to the electrode 5 connected to the holder 6 from a high frequency power source 7 through a matching circuit 8.
By applying a high frequency of MHz to negatively charge the surface of the semiconductor wafer 26 held by the holder 6, oxygen ions in the generated oxygen plasma have high energy and are low-K films on the semiconductor wafer 26. After being incident on the surface, the surface of the Low-K film was modified.

When the surface of the semiconductor wafer was observed after such ashing of Example 2, the resist pattern was completely removed without producing a residue. Also, Low
It was confirmed that the surface of the -K film was a modified hard material.

[0046]

As described in detail above, according to the present invention, a uniform plasma can be obtained even if the pressure in the container is lowered, or the type of processing gas, the pressure in the container and the input power are changed. Resist ashing, which can occur within
It is possible to provide a microwave plasma processing apparatus which can be effectively applied to etching in manufacturing a semiconductor device.

Further, according to the present invention, even if the pressure in the container is lowered, or the type of the processing gas, the pressure in the container, and the input power are changed, uniform plasma is generated in the container to form the resist pattern. Provided is a microwave plasma processing method capable of uniformly processing a member to be processed such as a semiconductor wafer or a glass substrate having a surface formed thereon, or a semiconductor wafer or a glass substrate having an etching mask formed on a plurality of films. can do.

[Brief description of drawings]

FIG. 1 is a schematic sectional view showing a microwave plasma processing apparatus according to the present invention.

FIG. 2 is a cross-sectional view of the main parts of the processing apparatus of FIG.

FIG. 3 is a sectional view taken along the line III-III in FIG.

FIG. 4 is a cross-sectional view showing another mode of the upper part of the container in the microwave plasma processing apparatus according to the present invention.

FIG. 5 is a sectional view showing still another mode of the upper part of the container in the microwave plasma processing apparatus according to the present invention.

[Explanation of symbols]

1 ... container, 5 ... electrode, 6 ... Holder, 7. High frequency power supply, 9 ... Gas supply pipe, 11 ... Exhaust pipe, 14, 27, 29 ... Dielectric window, 16, 31 ... Arc-shaped slits, 18 ... Square waveguide, 20 ... Microwave power supply, 22 ... Cylindrical waveguide, 26: Processed member (semiconductor wafer).

Claims (6)

[Claims] 1. A container in which a member to be processed is disposed, a gas supply pipe for supplying a processing gas into the container, a dielectric window attached to one surface of the container, and the dielectric window. A waveguide arranged outside the one surface of the container; and a microwave power source for introducing microwaves into the waveguide. The microwave radiating portion is attached to each of the opening portions of the microwaves, and the microwave radiating portion is opened at a portion of the waveguide located near one surface of the container corresponding to the plurality of dielectric windows. Wave plasma processing equipment. 2. The dielectric window has a circular shape, and is attached to each of the circular openings that are concentrically arranged with respect to the center of the one surface of the container. 1. The microwave plasma processing apparatus according to 1. 3. The dielectric window has an elongated shape in which two opposite sides are arcuate and is attached to an elongated opening concentrically arranged on one surface of the container with respect to the center thereof. The microwave plasma processing apparatus according to claim 1, wherein the microwave plasma processing apparatus is provided. 4. A container in which a member to be processed is arranged, a gas supply pipe for supplying a processing gas into the container, a dielectric window attached to one surface of the container, and the dielectric window. A waveguide arranged outside the one surface of the container; and a microwave power source for introducing microwaves into the waveguide. The microwave radiating part is attached to the ring-shaped opening of the microwave container, and the microwave radiating part is opened at a portion of the waveguide located near one surface of the container corresponding to the dielectric window. Plasma processing equipment. 5. A container in which a member to be processed is arranged, a gas supply pipe for supplying a processing gas into the container, a dielectric window attached to one surface of the container, and the dielectric window. The container is provided with a waveguide arranged outside the one surface of the container, and a microwave power source for introducing microwaves into the waveguide, and the dielectric window is provided on a plurality of surfaces of the container. A microwave plasma processing apparatus having a structure in which the microwave radiating section is attached to each of the openings, and the microwave radiating section is opened at a portion of the waveguide located near one surface of the container corresponding to the plurality of dielectric windows. A method of treating a member to be treated by arranging a member to be treated in the container, supplying a processing gas into the container through the gas supply pipe, and setting a desired degree of vacuum in the container, From the microwave power source Microwaves are introduced into the container through the waveguide, the microwave radiating part, and the plurality of dielectric windows to generate plasma, thereby treating the member to be processed in the container. Wave plasma processing method. 6. A container in which a member to be processed is arranged, a gas supply pipe for supplying a processing gas into the container, a dielectric window attached to one surface of the container, and the dielectric window. The container is provided with a waveguide arranged outside the one surface of the container, and a microwave power source for introducing microwaves into the waveguide, and the dielectric window is provided on a plurality of surfaces of the container. The microwave radiating part is attached to the ring-shaped opening, and the microwave radiating part is covered by the microwave plasma processing apparatus having a structure in which the part corresponding to the dielectric window is opened at the portion of the waveguide located near one surface of the container. A method of processing a processing member, wherein a member to be processed is arranged in the container, a processing gas is supplied into the container through the gas supply pipe, and the inside of the container is set to a desired degree of vacuum, and then the micro Microwave from power source Microwave plasma processing method comprising processing the member to be processed in the container by a waveguide said introduced into the vessel through the microwave radiating portion and the dielectric window to generate a plasma.