JP3069545B2 - Laminate including compound semiconductor and method of manufacturing the same - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a laminate containing a compound semiconductor applicable to a magnetic sensor and an electronic device.

[0002]

2. Description of the Related Art InAs is a material having an extremely high electron mobility, and has been expected to be applied to a high-sensitivity magnetic sensor and the like. 1) The higher the electron mobility, the better the crystallinity. It is difficult to grow InAs thin film. 2) I
Since the band gap of nAs is narrow, when used as a magnetic sensor, there is a problem in both the manufacturing process and the element characteristics that the temperature characteristics at high temperatures are inferior.

Hitherto, attempts have been made to grow InAs thin films on various substrates, but the lattice constant of an insulating substrate for growing a single crystal of the thin film is significantly different from that of InAs.
For this reason, the InAs crystal grown on the substrate has lattice disorder near the interface with the substrate, resulting in low electron mobility,
The properties have not been sufficiently obtained. In addition, a film having such characteristics has a large fluctuation in characteristics due to the manufacturing process of the element, and the temperature characteristics of the resistance tend to deteriorate.
For this reason, when attempting to manufacture a magnetic sensor using a thin InAs thin film as a magnetic sensing part, the electron mobility is lowered, and it is difficult to manufacture a magnetic sensor with high sensitivity.

Further, in order to improve the temperature characteristics of InAs, Ga-introduced In is introduced to widen the band gap.
A ternary mixed crystal system of GaAs has been attempted. InGaAs
InP exists as an insulating substrate whose lattice constant matches that of InP, but the composition ratio of In and Ga that lattice-match with InP is:
Only In _0.53 Ga _0.47 As, and there is no insulating substrate corresponding to an arbitrary composition of InGaAs. Therefore I
Even in the growth of InGaAs thin films having a lattice constant different from nP, lattice disorder generated at the interface with the substrate cannot be suppressed as in InAs, and InGaAs having high electron mobility cannot be suppressed.
It was difficult to obtain an s thin film.

[0005] Further, it is necessary to obtain a large sheet resistance value by reducing the thickness, but it is difficult to control the carrier concentration due to the disorder of the lattice. Therefore, the electron mobility is large and the sheet resistance value is low. It has been difficult to obtain an InAs-based thin film suitable for a large magnetic sensor.

As a technology of a magnetic sensor using an InAs thin film as a magneto-sensitive layer, Japanese Patent Publication No. 2-24033,
JP-A-61-20378 and JP-A-61-259583
There is an official gazette. In Japanese Patent Publication No. 2-24033, In
There has been proposed a Hall element in which the temperature sensitivity of the element is improved by doping the magnetic sensing layer of As with S and Si.
At a high temperature exceeding 100 ° C., a decrease in element resistance was observed, and there was a problem in reliability when a Hall element was used at a high temperature. JP-A-61-20378 discloses a semi-insulating Ga.
InAs or InGaAs grown on an As substrate
A Hall element using s as a magneto-sensitive layer has been proposed.
Lattice disorder was generated at the interface between the As substrate and the InAs layer, and the reliability and sensitivity at high temperatures were still insufficient due to the influence. Japanese Patent Application Laid-Open No. 61-259583 proposes a Hall element using InAs formed on a sapphire substrate as a magneto-sensitive layer. However, a decrease in element resistance at a high temperature exceeding 100 ° C. is observed. However, the reliability when used at a high temperature was insufficient. For this reason, there has been a demand for a technique that can realize a high electron mobility of a laminate including a compound semiconductor fundamentally, which is different from the related art.

[0007]

SUMMARY OF THE INVENTION The present invention is to produce a sensor thin film layer having high electron mobility without disorder of the crystal lattice, and to provide a high-sensitivity semiconductor sensor which has no characteristic change due to the process and has excellent temperature characteristics. It is intended to be realized.

[0008]

Means for Solving the Problems The present inventor has solved the problems of the InAs-based thin film and studied a method of manufacturing a semiconductor layer having a high electron mobility. As a result, the lattice constant of InAs is the same or close to that of InAs.
After forming a compound semiconductor layer having a larger band gap energy and then growing InAs thereon, it has been found that an extremely large electron mobility of InAs can be obtained even if the film thickness is small. Further, if the compound semiconductor layer lattice-matched to InAs is used, In with good crystallinity can be obtained.
It has been found that an As ultrathin film can be formed, and device characteristics can be improved from the quantum effect of the InAs ultrathin film. The above-mentioned InAs ultrathin film is doped with a donor impurity. Also, InGaAs in which Ga is introduced into InAs to further widen the band gap than InAs.
Also, it has been found that the use of a compound semiconductor layer lattice-matched to InGaAs makes it possible to form an InGaAs ultra-thin film having good crystallinity and to improve the temperature characteristics of an element. Furthermore, they found that if the quantum effect of an ultrathin film was used, Sb could be introduced into InAs or InGaAs to achieve higher sensitivity, and the present invention was completed. That is, a magnetic sensor including a high-resistance first compound semiconductor layer, an InAs layer formed on the layer, and an ohmic electrode formed on the InAs layer, wherein the first compound semiconductor is The magnetic sensor has a lattice constant equal to or close to that of InAs, and has a band gap energy larger than that of InAs.
Further, the InAs layer may be a ternary or quaternary mixed crystal in which Ga or Sb is introduced into the InAs layer. That is,
The InAs layer is made of In _x Ga _1-x As (0 <x <1.0) or In _{x
Ga 1-x As y Sb 1} -y (0 <x ≦ 1.0, 0 ≦ y <1.0)
It may be. Hereinafter, an InAs layer, In _x Ga _1-x A
s (0 <x <1.0) layer and _{In x Ga 1-x As y} Sb 1-y (0
<X ≦ 1.0, 0 ≦ y <1.0) The layers are collectively referred to as semiconductor layers.

Further, on the upper surface of the semiconductor layer, a high-resistance second compound semiconductor layer having a lattice constant equal to or close to that of the crystal constituting the semiconductor layer and having a band gap energy larger than that of the crystal. May be formed.

Further, in order to reduce defects at the interface between the semiconductor layer and the first and second compound semiconductor layers and to realize high electron mobility, one or both of the bonding species at the interface may be formed on the semiconductor layer side. III selected from the crystals constituting the semiconductor layer
The group and the first and second compound semiconductor layers are preferably formed from a group V selected from the compound semiconductors.
Further, the bonding species at the interface may be formed from a group V selected from crystals forming the semiconductor layer on the semiconductor layer side and from a group III selected from the compound semiconductors on the first and second compound semiconductor layers. . An intermediate layer may be inserted between the group III-group V bond.

Further, electrons participating in the electric conduction are present in the semiconductor layer, and the electron concentration is 5 × 10 ¹⁶ to 8 × 1.
0 ¹⁸ / cm ³ is preferable, and 8 × 10 ^{16 to} 3 × 10 ¹⁸
/ Cm ³ is a more preferred range. I as a semiconductor layer
n _x Ga _1-x As (0 <x <1.0) layer and In _x Ga _1-x
As _y Sb _1-y when using (0 <x ≦ 1.0, 0 ≦ y <1.0) layer is donor impurities may be doped into the semiconductor layer as necessary. Further, the first and second compound semiconductor layers serving as barrier layers for the semiconductor layer may be doped. Furthermore, it is common practice to introduce a spacer layer between the semiconductor layer and the doped barrier layer.

It is preferable that the electrode formed on the semiconductor layer of the present invention is formed in direct ohmic contact with the semiconductor layer. After the electrodes are formed on the semiconductor layer, ohmic contact with the semiconductor layer is performed by annealing or the like via the second compound semiconductor layer.

Further, the step of forming a high-resistance first compound semiconductor layer and the step of forming a semiconductor layer on the layer have the same lattice constant as the crystal constituting the semiconductor layer. Or a band gap energy having a value close to or larger than that of the crystal. Further, a step of forming the second compound semiconductor layer on the upper surface of the semiconductor layer as necessary is included. Also, if necessary, a semiconductor layer,
A step of doping the first or second compound semiconductor layer is also included.

[0014]

Next, the present invention will be described in more detail.

FIG. 1 shows a high-sensitivity Hall element manufactured using a laminate containing a compound semiconductor which is the basis of the present invention. FIG. 1A schematically shows a cross section.
FIG. 1- (b) is a diagram viewed from above. 1 in FIG.
Is a substrate, 2 is a high-resistance first compound semiconductor layer having a lattice constant equal to or close to that of a crystal constituting the semiconductor layer, and having a band gap energy larger than that of the crystal, and 3 is a semiconductor. The layers are shown. 4 (41, 4
2, 43, 44) indicate ohmic electrodes. 5 (51, 52, 53, 54) are electrodes for bonding. Here, only the magnetic sensor chip is shown for simplicity. FIG. 2 shows another embodiment of the present invention, in which reference numeral 6 denotes a high-resistance second compound semiconductor layer. Also,
Reference numeral 7 denotes a donor impurity doped in the semiconductor layer. Reference numeral 8 denotes a passivation layer made of an insulator formed as needed to protect the surface of the semiconductor.

In the present invention, the donor impurity doped in the semiconductor layer is indicated by 7, but the position of this impurity may be uniform throughout or may be only a predetermined position.
For example, only the central portion may be doped, or a portion may be doped and other portions may not be doped. Furthermore, the central part may be large and the peripheral part may be small. In addition, it is often the case that the central portion is small and the peripheral portion is heavily doped with impurities. These may be performed separately for each layer.
In the present invention, the impurity doped into the semiconductor layer may be any substance that generally acts as a donor for the crystal constituting the semiconductor layer, and S, Si, Ge, Se, and the like are preferable.

In _x Ga constituting the semiconductor layer of the present invention
_{1-x As y Sb 1-} y is a composition ratio of In and Ga in the layer 0 <x
≦ 1.0, and preferably 0.6 ≦ x ≦ 1.0.
Further, in order to utilize the high electron mobility of InAs, 0.
It is more preferable that 8 ≦ x ≦ 1.0. Also, In _x Ga _1-x A
The composition ratio of As and Sb in the s _y Sb _1-y layer is 0 ≦ y ≦ 1.0.
However, it is preferably in the range of 0.4 ≦ y ≦ 1.0, more preferably in the range of 0.6 ≦ y ≦ 1.0. Where x = 1.0
When y = 1.0, the semiconductor layer is doped with a donor impurity. The thickness of the semiconductor layer is
It is 1.4 μm or less, preferably 0.5 μm or less, more preferably 0.3 μm or less. Often less than 0.2 μm is often used to fabricate semiconductor sensors with higher sensitivity. Further, the thickness of 0.1 μm or less is preferably used for manufacturing a semiconductor sensor having a larger input resistance value. Further, the semiconductor layer is further thinned, electrons are confined in the semiconductor layer by the first and, if necessary, the second compound semiconductor layers, a quantum well is formed, and heat resistance, breakdown voltage, and the like are improved by a quantum effect. Will be In this case, the thickness of the semiconductor layer is 500 ° or less, preferably 300 ° or less, more preferably 200 ° or less. In particular, in the case where a thin semiconductor layer is used, in the present invention, the first or the second compound semiconductor layer is doped with a donor impurity near the boundary surface of the semiconductor layer, and electrons supplied from the impurity are doped. By supplying the semiconductor layer over the boundary surface, scattering due to impurities in the semiconductor layer is reduced, and higher electron mobility is often obtained for higher sensitivity. In this case, the electric conduction in the semiconductor layer is carried out by the electrons supplied from the first or second compound semiconductor layer to the semiconductor layer, and furthermore, the electrons existing in the semiconductor layer and the doping into the semiconductor layer. Mixed conduction with electrons supplied from a donor impurity atom. FIG. 3 shows such an embodiment of the present invention. Reference numeral 9 denotes a donor impurity doped into the high-resistance compound semiconductor layer for such a purpose. Figure 3-
(A) is an example in which the first compound semiconductor layer is doped with a donor impurity. FIG. 3B shows an example in which the second compound semiconductor layer is doped. Electrons supplied into the semiconductor layer from the donor impurity 9 may form an electron gas that spreads two-dimensionally in some cases.
It participates in electrical conduction together with the supplied electrons. The impurity 9 to be doped for this purpose may be anything as long as it acts as a donor impurity, but Si, S, Ge, Se and the like are preferable.

The high resistance first and second compound semiconductor layers used in the laminate of the present invention preferably have insulating or semi-insulating properties, but may have a high resistance according to these. For example, the resistance of the first and second compound semiconductor layers is at least 5 to 10 times higher than the resistance of the semiconductor layer,
It is preferably at least 100 times, more preferably at least 1000 times higher.

The first compound semiconductor layer on which the semiconductor layer used in the laminate of the present invention is formed and the second compound semiconductor layer formed on the upper surface of the semiconductor layer are generally a semiconductor layer. May be a compound semiconductor having the same lattice constant as or a value close to that of the crystal constituting, and having a value larger than that of the crystal. For example, GaSb, AlSb, Al _a1 Ga _1-a1
Sb, GaAs _c1 Sb _1-c1 , AlAs _c1 Sb _1-c1 , Al
_{a1 Ga 1-a1 As c1 Sb} 1-c1, Al b1 In 1-b1 As c2 Sb
_1-c2 , Al _b2 In _1-b2 P _d1 Sb _1-d1 or Al _a2 Ga _1-a2 P
_d2 Sb _1-d2 etc. can have a composition in which the lattice constant is the same as or close to the crystal constituting the semiconductor layer,
In addition, the band gap energy has a larger value than that of the crystal, and is a preferable material. In the compound semiconductor layer, for Al _a1 Ga _1-a1 As _c1 Sb _1-c1 , ｛0 ≦ a ₁
≦ 1.0, 0 ≦ c ₁ ≦ 0.6} is preferred, and {0.5 ≦ a ₁ ≦ 1.
0, 0 ≦ c ₁ ≦ 0.4} is a more preferable range. Al _b1
In _1-b 1As _c2 Sb _1-c2 , {0.2 ≦ b ₁ ≦ 1.0, 0
≦ c ₂ ≦ 1.0} is preferred, and {0.5 ≦ b ₁ ≦ 1.0, 0 ≦ c ₂
≦ 0.8｝ is a more preferred range. Al _b2 In _1-b2
P _d1 Sb _1-d1 is {0 ≦ b ₂ ≦ 1.0, 0 ≦ d ₁ ≦ 1.0}, but {0.1 ≦ b ₂ ≦ 1.0, 0.1 ≦ d ₁ ≦ 0.8% is a preferable range. For Al _a2 Ga _1-a2 P _d2 Sb _1-d2 , ｛0
≦ a ₂ ≦ 1.0, 0 ≦ d ₂ ≦ 0.5} is preferred, and {0.5 ≦ a ₂
≦ 1.0, 0 ≦ d ₂ ≦ 0.35 ° is a more preferable range. Here, the fact that the lattice constant of the first and second compound semiconductor layers has a value close to the lattice constant of the crystal constituting the semiconductor layer means that the lattice constant of the compound semiconductor and the crystal of the crystal constituting the semiconductor layer actually correspond to each other. The difference from the lattice constant is within ± 5%, more preferably within ± 2%.

The thickness l ₁ of the first compound semiconductor layer is 0.1.
μm ≦ l ₁ ≦ 10 μm, preferably 0.5 μm ≦
The range is l ₁ ≦ 5 μm. In order to obtain the quantum effect of the semiconductor layer, the thickness is preferably 1 μm or more. The thickness l ₂ of the second compound semiconductor layer is usually in accordance with the first compound semiconductor layer, but is preferably 1 μm or less, more preferably 0.5 μm or less.
μm or less and 0.1 μm or less are also preferably used.
Further, the first and second compound semiconductor layers may form a multilayer composed of several kinds selected from these compound semiconductors. For example, a third compound semiconductor layer may be formed on the second compound semiconductor layer. The third compound semiconductor layer is a semiconductor insulating layer pursuant to the second compound semiconductor layer, the thickness thereof is also the same as l _2. The second and third compound semiconductor layers prevent air oxidation of the semiconductor layer and have a protection effect against damage due to passivation or the like.

The bonding species at the interface formed by the semiconductor layer of the present invention and the first and second compound semiconductor layers include In-S
b, Ga-Sb, Ga-As, In-As, Al-A
s, Al-Sb, In-P, and Ga-P. Among them, In-Sb is preferably used. In addition, the group III layer
An intermediate layer may be introduced between the group V layers. FIG. 4 is an enlarged view of such an interfacial bonding species.
In order to form the interfacial bonding species, in the case of the interface between the first compound semiconductor layer and the semiconductor layer, first, when the growth of the first compound semiconductor layer ends, the group V (group III) selected from the compound semiconductor layer is used.
Irradiation, and then the irradiation of the group V (group III) is stopped, and at the same time, the group III (V) selected from the crystals constituting the semiconductor layer is irradiated.
(Tribe) only. Next, irradiation of the remaining group III and group V of the semiconductor layer crystal is started to grow the semiconductor layer. In the case of the interface between the semiconductor layer and the second compound semiconductor layer, when the growth of the semiconductor layer is completed, only the group III (group V) selected from the semiconductor layer crystal is irradiated. Next, the irradiation of the group III (group V) is stopped, and simultaneously the group V (group III) selected from the second compound semiconductors is irradiated. Then, irradiation with the remaining elements of the second compound semiconductor is started, and the second compound semiconductor layer is grown. The interface layer formed by the irradiation of the group III and group V is preferably grown by only a few atomic layers, and more preferably grown by only one atomic layer.

The substrate used to form the laminate of the present invention may be any substrate as long as it can grow a single crystal, and a GaAs single crystal semi-insulating substrate, a Si single crystal substrate, etc. are preferred examples. is there. Further, as a surface on which a crystal is grown, a (100) plane, a (110) plane, or the like is often used. Further, a surface cut at an angle of several degrees from these crystal planes is often used to improve crystal growth. For example, a plane turned off twice from the (100) plane is a preferable example. In the process of manufacturing a magnetic sensor using an insulating substrate such as mica, a thin film layer grown on mica is also transferred. That is, in the manufactured magnetic sensor, the substrate may not be used substantially.

In the method for producing a laminate of the present invention,
The step of forming the first compound semiconductor layer, the step of forming the semiconductor layer, and the step of forming the second compound semiconductor are generally performed by any method capable of growing a single crystal of a thin film, but are preferably performed by molecular beam epitaxy (MBE). ), Metal organic vapor phase epitaxy (MOVPE), atomic layer epitaxy (ALE) and the like are particularly preferred methods.

Further, in the step of processing the semiconductor layer into a required shape as required, wet etching, dry etching, ion milling, or the like is used. These methods are also preferably used for the purpose of processing the first and second compound semiconductor layers into required shapes as required.

FIG. 5 shows a magnetoresistive element which is an example of a magnetic sensor produced using the laminate of the present invention. Fig. 5-
(A) is a sectional view of a two-terminal magnetoresistive element. FIG. 5- (b) is a diagram viewed from above. FIG. 5C is a diagram of the three-terminal differential type magnetoresistive element viewed from above.
Reference numeral 10 denotes a short bar electrode. This short bar electrode has the effect of increasing the magnetoresistance effect, and is preferably used for increasing the magnetic sensitivity. Short bar electrode 10 of FIG.
Has ohmic contact with the semiconductor layer 3 and is usually made of metal.

The magnetic sensor produced by using the laminated body of the present invention is preferably packaged together with a SiIC chip for amplifying the output of the sensor and used as a magnetic sensor such as a Hall IC or a magnetoresistive IC. Done. FIG. 6 shows such an example. 11 is a magnetic sensor chip, 12 is a SiIC chip, 13 is an island portion on a lead, 14 is a lead, 15 is a wire, and 1
Reference numeral 6 denotes a mold resin.

Hereinafter, the present invention will be described with reference to examples, but the present invention is not limited to these examples.

Example 1 A GaAs substrate having a diameter of 2 inches was formed on the surface of a GaAs substrate by MBE.
Non-doped Al _0.8 Ga as the first compound semiconductor layer
_0.2 As _0.16 Sb _0.84 was grown to 0.30 μm. Next, Si-doped InAs was grown as a semiconductor layer by 0.25 μm. The value of the electron mobility of this InAs thin film is 1900.
0 cm ² / Vs, sheet resistance was 150 Ω / □, and electron concentration was 0.88 × 10 ¹⁷ cm ⁻³ .

A Hall element was prepared to examine the characteristics of the laminate as a magnetic sensor. Using a photolithography method, a resist pattern for forming a portion to be a magnetically sensitive portion was formed on the laminated thin film formed on the GaAs substrate. Subsequently, unnecessary portions were etched with an H ₃ PO ₄ type etching solution, and then the resist was removed.
Next, the entire surface of the wafer is subjected to plasma CVD by a plasma CVD method.
A 2 μm SiN film was formed. A resist pattern having openings serving as electrodes was formed on the layer by photolithography. Next, by using reactive ion etching, the portion of the SiN where the electrodes were to be formed was etched to expose the semiconductor layer. Furthermore, an AuGe (Au: Ge = 88: 12) layer was continuously deposited at 2000 °, a Ni layer at 500 ° and an Au layer at 3500 ° by a vacuum deposition method, and an electrode pattern of a Hall element was obtained by a usual lift-off method. Thus, a large number of Hall elements were manufactured on a 2-inch wafer. Next, each Hall element was cut by a dicing saw. The chip size of the manufactured Hall element was 0.36 mm × 0.36 mm. This Hall element chip was die-bonded and wire-bonded, and then transfer-molded to produce a Hall element molded with epoxy resin. The film characteristics are shown in Table 1 below, and the characteristics of the device are shown in Table 2.

As shown in Table 2, the Hall element of Example 1 has a large Hall output voltage of 210 mV in a magnetic field having a magnetic flux density of 500 G at a rated input voltage. This value is more than twice the average Hall output voltage of the GaAs Hall element. FIG. 7 shows the temperature characteristics of the Hall output voltage. Further, the temperature change of the Hall output voltage at a constant voltage is small even at 100 ° C. or more, indicating excellent temperature characteristics. As shown in FIG. 8, the temperature change of the element resistance value is extremely small up to 150 ° C., and the decrease of the resistance value is also very small. Furthermore, the coefficient of heat dissipation in the case of molding with a standard mini-mold mold is about 2.3 mW / ° C., indicating that it can be used even at a high temperature of 100 ° C. to 150 ° C., which was not possible conventionally. In addition, it was found that there was no problem with use on the low temperature side even at −50 ° C., and it was found that reliability was obtained over a wide temperature range. As described above, the Hall element manufactured using the laminate of the present invention has a large Hall output voltage in a magnetic field, that is, high sensitivity, can be used up to high temperatures, and has extremely high reliability.

[0031]

[0032]

Example 2 A GaAs substrate having a diameter of 2 inches was formed on the surface of a GaAs substrate by MBE.
Non-doped Al _0.8 Ga as the first compound semiconductor layer
_0.2 As _0.16 Sb _0.84 was grown to 0.30 μm. Next, Si-doped InAs was grown as a semiconductor layer by 0.15 μm. The value of the electron mobility of this InAs thin film is 1900.
0 cm ² / Vs, a sheet resistance of 230Ω / □, it was electron concentration 0.95 × 10 ¹⁷ cm ^-3.

Hereinafter, a Hall element was manufactured in the same manner as in Example 1.

Table 1 shows film properties, and Table 2 shows element properties.
It was shown to.

As shown in Table 2, the Hall element of Example 2 has a large Hall output voltage of 260 mV in a magnetic field having a magnetic flux density of 500 G at the rated input voltage. This value is more than twice the average Hall output voltage of the GaAs Hall element. Further, the temperature dependency of the Hall output voltage showed the same characteristics as those of the first embodiment. further,
The temperature dependence of the element resistance was extremely small up to 150 ° C. as in Example 1. Thus, the temperature change of the element resistance value is extremely small, and the decrease of the resistance value is also very small. For this reason, when the element is used at a constant voltage, no overcurrent flows and no failure occurs, and the reliability at high temperatures is good. Further, use at a low temperature side has no problem even at −50 ° C., and it has been found that it is reliable over a wide temperature range. As described above, the Hall element manufactured using the laminate of the present invention has a large Hall output voltage in a magnetic field, that is, high sensitivity, can be used up to high temperatures, and has extremely high reliability.

(Example 3) A GaAs substrate having a diameter of 2 inches was formed on the surface of a GaAs substrate by MBE.
Non-doped Al _0.8 Ga as the first compound semiconductor layer
_0.2 As _0.16 Sb _0.84 was grown to 0.30 μm. Next, Si-doped InAs was grown as a semiconductor layer by 0.10 μm. The value of the electron mobility of this InAs thin film is 1900.
0 cm ² / Vs, sheet resistance value was 300 Ω / □, and electron concentration was 1.1 × 10 ¹⁷ cm ⁻³ .

Thereafter, a Hall element was manufactured in the same manner as in Example 1.

The film characteristics are shown in Table 1 below, and the device characteristics are shown in Table 2 below.
It was shown to.

As shown in Table 2, the Hall element of Example 3 has a large Hall output voltage of 270 mV in a magnetic field having a magnetic flux density of 500 G at a rated input voltage. This value is more than twice the average Hall output voltage of the GaAs Hall element. Further, the temperature dependency of the Hall output voltage showed the same characteristics as those of the first embodiment. further,
The temperature dependence of the element resistance was extremely small up to 150 ° C. as in Example 1. Thus, the temperature change of the element resistance value is extremely small, and the decrease of the resistance value is also very small. For this reason, when the element is used at a constant voltage, no overcurrent flows and no failure occurs, and the reliability at high temperatures is good. Further, use at a low temperature side has no problem even at −50 ° C., and it has been found that it is reliable over a wide temperature range. As described above, the Hall element manufactured using the laminate of the present invention has a large Hall output voltage in a magnetic field, that is, high sensitivity, can be used up to high temperatures, and has extremely high reliability.

Comparative Example 1 A non-doped Al _0.8 G was obtained in the same manner as in Example 3.
a _0.2 As _0.5 Sb _0.5 was grown to 0.30 μm. Next, non-doped InAs was grown to 0.10 μm. The surface morphology of this InAs thin film was poor, and the sheet resistance was too high to measure the electron mobility. AlGa
It became clear that if the AsSb layer deviates from the lattice constant of InAs, an InAs thin film having good crystallinity cannot be obtained.
It was impossible to make a Hall element.

Example 4 A non-doped Al _0.8 Ga _0.2 as a first compound semiconductor layer was formed on the surface of a GaAs substrate having a diameter of 2 inches by MBE.
As _0.16 Sb _0.84 was grown to 0.3 μm. Next, Si-doped InAs was grown as a semiconductor layer by 0.10 μm. Next, as a second compound semiconductor layer, non-doped Al
_0.8 Ga _0.2 As _0.16 Sb _0.84 is grown at 500 _°, and GaAs _0.16 Sb _0.84 is further grown at 100 _° as a cap layer.
Grew. The electron mobility value of this InAs thin film is 21
000 cm ² / Vs, sheet resistance value was 280 Ω / □, and electron concentration was 1.1 × 10 ¹⁷ cm ⁻³ .

Next, using photolithography,
On the laminated thin film formed on the GaAs substrate, a resist pattern for forming a portion to be a magnetically sensitive portion was formed. Subsequently, unnecessary portions were etched with an H ₃ PO ₄ type etching solution, and then the resist was removed. Next, 0.2 μm of Si was deposited on the entire surface of the wafer by plasma CVD.
An N film was formed. A resist pattern having openings serving as electrodes was formed on the layer by photolithography. Then, the reactive ion etching is used to etch the SiN where the electrode is to be formed, and then the unnecessary portions of the second compound semiconductor layer and the cap layer are removed with an HCl-based etchant to expose the semiconductor layer. I let it. Further, AuGe (Au: Ge = 8
8:12) 2000Å layer, 500Å Ni layer, 3 Au layer
The electrode pattern of the Hall element was formed by a continuous lift-off method at 500 ° continuous vapor deposition. Thus, a large number of Hall elements were manufactured on a 2-inch wafer. next,
Each Hall element was cut by a dicing saw. The chip size of this manufactured Hall element is 0.36mm ×
0.36 mm.

This Hall element chip is die-bonded,
Wire bonding was performed, and then transfer molding was performed to manufacture a Hall element molded with epoxy resin.

The film characteristics are shown in Table 1 below, and the device characteristics are shown in Table 2 below.
It was shown to.

As shown in Table 2, the Hall element of Example 4 has a large Hall output voltage of 309 mV in a magnetic field having a magnetic flux density of 500 G at a rated input voltage. This value is three times or more the average Hall output voltage of the GaAs Hall element. Further, the temperature characteristics of the Hall output voltage were the same as those in Example 1, and showed good temperature characteristics at 100 ° C. or higher. The temperature dependence of the element resistance was the same as in Example 1, the temperature change was extremely small, and the decrease in the resistance was very small. The coefficient of heat dissipation of an element molded with resin using a standard mini-mold type is 2.3 mW /
C., which indicates that the device can be used even at a high temperature of 100 to 150 ° C., which is not possible conventionally. As described above, the Hall element manufactured using the laminate of the present invention has a large Hall output voltage in a magnetic field, that is, high sensitivity, can be used up to high temperatures, and has extremely high reliability.
The use on the low temperature side has no problem even at −50 ° C., and it has been found that it is reliable over a wide temperature range.

(Example 5) A GaAs substrate having a diameter of 2 inches was formed on the surface of a GaAs substrate by MBE.
Al _0.80 Ga _0.2 As _0.32 S as first compound semiconductor layer
b _0.68 was grown to 0.30 μm. Next, Si-doped In _0.8 Ga _0.2 As was grown as a semiconductor layer by 0.10 μm. This In _0.8 Ga _0.2 As thin film has an electron mobility of 15500 cm ² / Vs and a sheet resistance of 330 Ω / Vs.
□, the electron concentration was 1.22 × 10 ¹⁷ cm ⁻³ .

Thereafter, a Hall element was manufactured in the same manner as in Example 1.

The film characteristics are shown in Table 1 below, and the device characteristics are shown in Table 2
It was shown to.

As shown in Table 2, the Hall element of Example 5 has a large Hall output voltage of 200 mV in a magnetic field having a magnetic flux density of 500 G at the rated input voltage. This value is more than twice the average Hall output voltage of the GaAs Hall element. FIG. 9 shows the temperature characteristics of the Hall output voltage. Further, the temperature change of the Hall output voltage at a constant voltage is small even at 100 ° C. or more, indicating excellent temperature characteristics. Further, as shown in FIG. 10, the temperature change of the element resistance value is extremely small up to 150 ° C., and the resistance value does not decrease. For this reason, when the element is used at a constant voltage, no overcurrent flows and no failure occurs, and the reliability at high temperatures is good. It has become clear that it can be used even at high temperatures that were not possible before. Further, use at a low temperature side has no problem even at −60 ° C., and it has been found that the device is reliable over a wide temperature range. As described above, the Hall element manufactured using the laminate of the present invention has a large Hall output voltage in a magnetic field, that is, high sensitivity, can be used up to high temperatures, and has extremely high reliability. This device also consumes less power, and requires only half the power consumption to obtain the same sensitivity, especially as compared to a GaAs Hall device.

Comparative Example 2 As in Example 5, undoped Al _0.8 Ga _0.2 As
_0.6 Sb _0.4 was grown to 0.30 μm. Next, Si-doped In _0.8 Ga _0.2 As was grown to 0.10 μm.
The surface morphology of the In _0.8 Ga _0.2 As thin film was poor, and it was impossible to measure the electron mobility. It was impossible to make a Hall element.

Example 6 A non-doped Al _0.8 Ga _0.2 as a first compound semiconductor layer was formed on the surface of a GaAs substrate having a diameter of 2 inches by MBE.
As _0.23 Sb _0.77 was grown to 0.3 μm. Next, as a semiconductor layer, Si-doped In _0.8 Ga _0.2 As is 0.10 μm.
m. Next, non-doped Al _0.8 Ga _0.2 As _0.23 Sb _0.77 is grown at 500 ° as a second compound semiconductor layer, and GaAs _0.23 Sb _{0.77 is} further formed as a cap layer.
Was grown 100 °. This In _0.8 Ga _0.2 As thin film has an electron mobility of 19000 cm ² / Vs, a sheet resistance of 310 Ω / □, and an electron concentration of 1.06 × 10 ¹⁷ cm ^−3.
Met.

Thereafter, a Hall element was manufactured in the same manner as in Example 4.

Table 1 shows the film characteristics, and Table 2 shows the characteristics of the device.
It was shown to.

As shown in Table 2, the Hall element of Example 6 has a large Hall output voltage of 240 mV in a magnetic field having a magnetic flux density of 500 G at a rated input voltage. This value is more than twice the average Hall output voltage of the GaAs Hall element. Further, the temperature characteristics of the Hall output voltage were the same as those in Example 5, and showed good temperature characteristics at 100 ° C. or higher. The temperature dependence of the element resistance was the same as in Example 5, the temperature change was extremely small, and no decrease in the resistance was observed. The coefficient of heat dissipation of a resin molded element with a standard mini-mold type is 2.3 mW / ° C.
It has been found that this device can be used even at a high temperature of 100 to 150 ° C., which is impossible conventionally. As described above, the Hall element manufactured using the laminate of the present invention has a large Hall output voltage in a magnetic field, that is, high sensitivity, can be used up to high temperatures, and has extremely high reliability. The use on the low temperature side has no problem even at −60 ° C., and it has been found that it is reliable over a wide temperature range.

Example 7 A non-doped Al _0.8 Ga _0.2 was formed as a first compound semiconductor layer on the surface of a GaAs substrate having a diameter of 2 inches by MBE.
As _0.45 Sb _0.55 was grown to 0.3 μm. Next, as a semiconductor layer, Si-doped In _0.65 Ga _0.36 As is 0.10 μm.
m. Next, a non-doped Al _0.8 Ga _0.2 As _0.45 Sb _0.55 was grown at 500 ° as a second compound semiconductor layer, and GaAs _0.45 Sb _0.55 was further formed as a cap layer.
Was grown 100 °. This In _0.65 Ga _0.35 As thin film has an electron mobility of 13000 cm ² / Vs, a sheet resistance of 380 Ω / □, and an electron concentration of 1.26 × 10 ¹⁷ cm ^-3.
Met.

Thereafter, a Hall element was manufactured in the same manner as in Example 4.

Table 1 shows film characteristics, and Table 2 shows device characteristics.
It was shown to.

As shown in Table 2, the Hall element of Example 7 has a large Hall output voltage of 195 mV in a magnetic field having a magnetic flux density of 500 G at the rated input voltage. This value is twice the average Hall output voltage of the GaAs Hall element. Further, the temperature characteristics of the Hall output voltage were the same as those in Example 5, and showed good temperature characteristics at 100 ° C. or higher. The temperature dependence of the element resistance was the same as in Example 5, the temperature change was extremely small, and no decrease in the resistance was observed. The coefficient of heat dissipation of a resin molded element using a standard mini-mold type is about 2.3 mW / ° C., and it is clear that this element can be used even at a high temperature of 100 to 150 ° C., which is not possible conventionally. It became. As described above, the Hall element manufactured using the laminate of the present invention has a large Hall output voltage in a magnetic field, that is, high sensitivity, can be used up to high temperatures, and has extremely high reliability. The use on the low temperature side has no problem even at −60 ° C., and it has been found that it is reliable over a wide temperature range.

Example 8 A non-doped Al _0.8 Ga _0.2 as a first compound semiconductor layer was formed on the surface of a GaAs substrate having a diameter of 2 inches by MBE.
As _0.75 Sb _0.25 was grown to 0.3 μm. Next, as a semiconductor layer, Si-doped In _0.3 Ga _0.7 As is 0.10 μm.
m. Next, a non-doped Al _0.8 Ga _0.2 As _0.75 Sb _0.25 is grown at 500 ° as a second compound semiconductor layer, and a GaAs _0.75 Sb _0.25
Was grown 100 °. The electron mobility of this In _0.3 Ga _0.7 As thin film was 9000 cm ² / Vs, the sheet resistance was 420 Ω / □, and the electron concentration was 1.65 × 10 ¹⁷ cm ⁻³ .

Thereafter, a Hall element was manufactured in the same manner as in Example 4.

Table 1 shows film characteristics, and Table 2 shows device characteristics.
It was shown to.

As shown in Table 2, the Hall element of Example 8 has a Hall output voltage of 140 mV in a magnetic field having a magnetic flux density of 500 G at a rated input voltage. This value is about 1.5 times the average Hall output voltage of the GaAs Hall element. Further, the temperature characteristics of the Hall output voltage were the same as those in Example 5, and showed good temperature characteristics at 100 ° C. or higher. The temperature dependence of the element resistance was the same as in Example 5, the temperature change was extremely small, and no decrease in the resistance was observed. The coefficient of heat dissipation of a resin molded element using a standard mini-mold type is about 2.3 mW / ° C., and it is clear that this element can be used even at a high temperature of 100 to 150 ° C., which is not possible conventionally. It became. As described above, the Hall element manufactured using the laminate of the present invention has a large Hall output voltage in a magnetic field, that is, high sensitivity, can be used up to high temperatures, and has extremely high reliability. The use on the low temperature side has no problem even at −60 ° C., and it has been found that it is reliable over a wide temperature range.

Example 9 A non-doped Al _0.8 In _0.2 as a first compound semiconductor layer was formed on the surface of a GaAs substrate having a diameter of 2 inches by MBE.
As _0.3 Sb _0.7 was grown to _0.3 μm. Next, as a semiconductor layer, Si-doped In _0.8 Ga _0.2 As _0.3 Sb _0.7
Was grown 0.10 μm. Next, as a second compound semiconductor layer, non-doped Al _0.8 In _0.2 As _0.3 Sb _0.7
Was grown 500 °. This In _0.8 Ga _0.2 As _0.3
The electron mobility value of the Sb _0.7 thin film is 20000 cm ² / V
s, sheet resistance value is 270Ω / □, electron concentration is 1.15 ×
It was 10 ¹⁷ cm ^-3 .

Next, using photolithography,
On the laminated thin film formed on the GaAs substrate, a resist pattern for forming a portion to be a magnetically sensitive portion was formed. Subsequently, unnecessary portions were etched with an H ₃ PO ₄ type etching solution, and then the resist was removed. Next, 0.2 μm of Si was deposited on the entire surface of the wafer by plasma CVD.
An N film was formed. A resist pattern having openings serving as electrodes was formed on the layer by photolithography. Next, the reactive ion etching was used to etch the SiN in the portion where the electrode was to be formed, and then the unnecessary portion of the second compound semiconductor layer was removed with an HCl-based etchant to expose the semiconductor layer. Further, two layers of AuGe (Au: Ge = 88: 12) were formed by vacuum evaporation.
An electrode layer of a Hall element was formed by a conventional lift-off method by successively depositing a 2,000-.ANG., Ni layer at 500.degree. And an Au layer at 3,500.degree. Thus, a large number of Hall elements were manufactured on a 2-inch wafer. Next, each Hall element was cut by a dicing saw. The chip size of this manufactured Hall element is 0.36 mm x 0.36 mm
Met.

This Hall element chip is die-bonded,
Wire bonding was performed, and then transfer molding was performed to manufacture a Hall element molded with epoxy resin.

The film characteristics are shown in Table 1 below, and the device characteristics are shown in Table 2 below.
It was shown to.

As shown in Table 2, the Hall element of the ninth embodiment has a Hall output voltage of 300 mV in a magnetic field having a magnetic flux density of 500 G at a rated input voltage. This value is about three times larger than the average Hall output voltage of the GaAs Hall element. Further, the temperature characteristics of the Hall output voltage were the same as those in Example 5, and showed good temperature characteristics at 100 ° C. or higher. The temperature dependence of the element resistance was the same as in Example 5, the temperature change was extremely small, and no decrease in the resistance was observed. The coefficient of heat dissipation of a resin molded element using a standard mini-mold type is about 2.3 mW / ° C., and it is clear that this element can be used even at a high temperature of 100 to 150 ° C., which is not possible conventionally. It became. As described above, the Hall element manufactured using the laminate of the present invention has a large Hall output voltage in a magnetic field, that is, high sensitivity, can be used up to high temperatures, and has extremely high reliability. The use on the low temperature side has no problem even at −60 ° C., and it has been found that it is reliable over a wide temperature range.

(Comparative Example 3) As in Example 9, non-doped Al _0.8 In _0.2 As
_0.7 Sb _0.3 was grown to _0.3 μm. Next, Si-doped In _0.8 Ga _0.2 As _0.3 Sb _0.7 was grown to 0.10 μm. Next, non-doped Al _0.8 In _0.2 As _0.7
Sb _0.3 was grown at 500 °. This In _0.8 Ga _0.2
The surface morphology of the As _0.3 Sb _0.7 thin film was poor, the sheet resistance was very high, and the electron mobility could not be measured.
It was impossible to make a Hall element.

Example 10 A non-doped Al _0.8 In _0.2 as a first compound semiconductor layer was formed on the surface of a GaAs substrate having a diameter of 2 inches by MBE.
As _0.05 Sb _0.95 was grown to 0.3 μm. Next, as a semiconductor layer, Si-doped In _0.8 Ga _0.2 As _0.5 Sb _0.5
Was grown 0.10 μm. Next, a non-doped Al _0.8 In _0.2 As _0.05 Sb _{0.95 is used} as a second compound semiconductor layer.
Was grown 500 °. This In _0.8 Ga _0.2 As _0.5
The value of the electron mobility of the Sb _0.5 thin film is 21000 cm ² / V
s, sheet resistance value is 270Ω / □, electron concentration is 1.10 ×
It was 10 ¹⁷ cm ^-3 .

Thereafter, a Hall element was manufactured in the same manner as in Example 9.

The film characteristics are shown in Table 1 below, and the device characteristics are shown in Table 2 below.
It was shown to.

As shown in Table 2, the Hall element of Example 10 has a Hall output voltage of 310 mV in a magnetic field having a magnetic flux density of 500 G at a rated input voltage.
This value is about three times larger than the average Hall output voltage of the GaAs Hall element. Further, the temperature characteristics of the Hall output voltage were the same as those in Example 5, and showed good temperature characteristics at 100 ° C. or higher. The temperature dependence of the element resistance was the same as in Example 5, the temperature change was extremely small, and no decrease in the resistance was observed. The coefficient of heat dissipation of a resin molded element with a standard mini-mold type is 2.3 mW / ° C.
It has been found that this device can be used even at a high temperature of 100 to 150 ° C., which is impossible conventionally. As described above, the Hall element manufactured using the laminate of the present invention has a large Hall output voltage in a magnetic field, that is, high sensitivity, can be used up to high temperatures, and has extremely high reliability. The use on the low temperature side has no problem even at −60 ° C., and it has been found that it is reliable over a wide temperature range.

Example 11 A non-doped Al _0.4 In _0.6 as a first compound semiconductor layer was formed on a surface of a GaAs substrate having a diameter of 2 inches by MBE.
As _0.05 Sb _0.95 was grown to 0.3 μm. Next, as a semiconductor layer, Si-doped In _0.8 Ga _0.2 As _0.2 Sb _0.8
Was grown 0.10 μm. Next, as a second compound semiconductor layer, a non-doped Al _0.4 In _0.6 As _0.05 Sb _0.95
Was grown 500 °. This In _0.8 Ga _0.2 As _0.2
The electron mobility value of the Sb _0.8 thin film is 21000 cm ² / V
s, sheet resistance 250Ω / □, electron concentration 1.19 ×
It was 10 ¹⁷ cm ^-3 .

Thereafter, a Hall element was manufactured in the same manner as in Example 9.

Table 1 shows film characteristics, and Table 2 shows device characteristics.
It was shown to.

As shown in Table 2, the Hall element of Example 11 has a Hall output voltage of 305 mV in a magnetic field having a magnetic flux density of 500 G at a rated input voltage.
This value is about three times larger than the average Hall output voltage of the GaAs Hall element. Further, the temperature characteristics of the Hall output voltage were the same as those in Example 5, and showed good temperature characteristics at 100 ° C. or higher. The temperature dependence of the element resistance was the same as in Example 5, the temperature change was extremely small, and no decrease in the resistance was observed. The coefficient of heat dissipation of a resin molded element with a standard mini-mold type is 2.3 mW / ° C.
It has been found that this device can be used even at a high temperature of 100 to 150 ° C., which is impossible conventionally. As described above, the Hall element manufactured using the laminate of the present invention has a large Hall output voltage in a magnetic field, that is, high sensitivity, can be used up to high temperatures, and has extremely high reliability. The use on the low temperature side has no problem even at −60 ° C., and it has been found that it is reliable over a wide temperature range.

Example 12 In order to obtain a Hall element utilizing the quantum effect, a non-doped Al _0.8 Ga _0.2 As _0.16 was formed as a first compound semiconductor layer on the surface of a GaAs substrate having a diameter of 2 inches by MBE.
Sb _0.84 was grown to 1.0 μm. Next, non-doped InAs was grown as a semiconductor layer by 150 °. Next, non-doped Al _0.8 Ga _0.2 A is used as the second compound semiconductor layer.
s _0.16 Sb _0.84 was grown at 500 _° and GaAs _0.16 Sb _0.84 was grown at 100 _° as a cap layer. The electron mobility value of this InAs thin film was 15000 cm ² /
Vs, sheet resistance 200Ω / □, electron concentration 1.39
× 10 ¹⁸ cm ^-3 . It was also confirmed that this thin film formed a quantum well.

Thereafter, a Hall element was manufactured in the same manner as in Example 4.

Table 3 shows film properties, and Table 4 shows element properties.
It was shown to.

As shown in Table 4, the Hall element of Example 12 has a large Hall output voltage of 220 mV in a magnetic field having a magnetic flux density of 500 G at the rated input voltage. This value is more than twice the average Hall output voltage of the GaAs Hall element. FIG. 11 shows the temperature characteristics of the Hall output voltage. The temperature change of the Hall output voltage at a constant voltage is small even at 100 ° C. or higher, indicating excellent temperature characteristics. As shown in FIG. 12, the temperature change of the element resistance value did not drop to about 150 ° C. at all, indicating that the device had excellent temperature characteristics. For this reason, when the element is used at a constant voltage, no overcurrent flows and no failure occurs, and the reliability at a high temperature is good. The element manufactured by resin molding with a standard mini-mold type has a coefficient of heat dissipation of about 2.3 mW / ° C.
It has been clarified that it can be used even at a conventionally impossible high temperature of 00 to 150 ° C. In addition, it was found that use at a low temperature side did not cause any problem even at −50 ° C., and it was found that the film was reliable over a wide temperature range. As described above, the Hall element manufactured using the laminate of the present invention has a large Hall output voltage in a magnetic field, that is, high sensitivity, can be used up to high temperatures, and has extremely high reliability.

Comparative Example 4 As in Example 12, non-doped Al _0.8 Ga _0.2 As _0.5 Sb _0.5 was grown to 1.0 μm on the surface of a GaAs substrate having a diameter of 2 inches. Next, non-doped InAs is
Grow 0 °. Next, non-doped Al _0.8 Ga _0.2
As _0.5 Sb _0.5 was grown at 500 °, and GaAs _0.5 Sb _0.5 was grown at 100 ° as a cap layer.
The surface morphology of the grown thin film is slightly cloudy, and the electron mobility value of this InAs thin film is 2300 cm ² / V
s, sheet resistance value is 1030Ω / □, electron concentration is 1.
It was 75 × 10 ¹⁸ cm ⁻³ . A Hall element was manufactured in the same manner as in Example 4, but the Hall output voltage was
The input resistance was as small as 35 mV and as high as 2 kΩ. As for the temperature characteristics, the Hall output voltage and the input resistance both changed greatly in temperature, and the input resistance in the high-temperature portion was greatly reduced.

Example 13 In order to obtain a Hall element utilizing the quantum effect, a non-doped Al _0.8 Ga _0.2 As _0.16 was formed as a first compound semiconductor layer on the surface of a GaAs substrate having a diameter of 2 inches by MBE.
Sb _0.84 was grown to 1.0 μm. Next, non-doped InAs was grown to 200 [deg.] As a semiconductor layer. Next, non-doped Al _0.8 Ga _0.2 A is used as the second compound semiconductor layer.
s _0.16 Sb _0.84 was grown at 500 _° and GaAs _0.16 Sb _0.84 was grown at 100 _° as a cap layer. The electron mobility value of this InAs thin film was 15000 cm ² /
Vs, sheet resistance value is 215Ω / □, electron concentration is 0.97
× 10 ¹⁸ cm ^-3 . It was also confirmed that this thin film formed a quantum well.

Thereafter, a Hall element was manufactured in the same manner as in Example 4.

Table 3 shows film characteristics, and Table 4 shows device characteristics.
It was shown to.

As shown in Table 4, the Hall element of Example 13 has a large Hall output voltage of 225 mV in a magnetic field having a magnetic flux density of 500 G at the rated input voltage. This value is more than twice the average Hall output voltage of the GaAs Hall element. Further, the temperature change of the Hall output voltage is small as in the twelfth embodiment, and the temperature change of the element resistance does not drop at all to about 150 ° C. as in the twelfth embodiment, and is excellent in temperature dependency. I understood. The element manufactured by resin molding with a standard mini-mold type has a coefficient of heat dissipation of about 2.3 mW / ° C. This element can be used even at a high temperature of 100 to 150 ° C, which is impossible conventionally. It became clear what we could do.
In addition, it was found that there was no problem with use on the low temperature side even at −50 ° C., and it was found that reliability was obtained over a wide temperature range. As described above, the Hall element manufactured using the laminate of the present invention has a large Hall output voltage in a magnetic field, that is, high sensitivity, can be used up to high temperatures, and has extremely high reliability.

Example 14 In order to obtain a Hall element utilizing the quantum effect, a non-doped Al _0.8 Ga _0.2 As _0.16 was formed as a first compound semiconductor layer on the surface of a GaAs substrate having a diameter of 2 inches by MBE.
Sb _0.84 was grown to 1.0 μm. Next, non-doped InAs was grown at 300 ° as a semiconductor layer. Next, non-doped Al _0.8 Ga _0.2 A is used as the second compound semiconductor layer.
s _0.16 Sb _0.84 was grown at 500 _° and GaAs _0.16 Sb _0.84 was grown at 100 _° as a cap layer. The electron mobility value of this InAs thin film was 15000 cm ² /
Vs, sheet resistance value is 250Ω / □, electron concentration is 0.56
× 10 ¹⁸ cm ^-3 .

Thereafter, a Hall element was manufactured in the same manner as in Example 4.

Table 3 shows film characteristics, and Table 4 shows device characteristics.
It was shown to.

As shown in Table 4, the Hall element of Example 14 has a large Hall output voltage of 210 mV in a magnetic field having a magnetic flux density of 500 G at the rated input voltage. This value is more than twice the average Hall output voltage of the GaAs Hall element. Further, the temperature change of the Hall output voltage showed the same characteristics as those of Example 12. Further, even if the temperature change of the element resistance value exceeds 150 ° C. as in Example 12, the resistance value does not decrease and the heat resistance is extremely good. It has been found that this device can be used even at a high temperature of 100 to 150 ° C., which is impossible conventionally.
In addition, it was found that there was no problem with use on the low temperature side even at −50 ° C., and it was found that reliability was obtained over a wide temperature range. As described above, the Hall element manufactured using the laminate of the present invention has a large Hall output voltage in a magnetic field, that is, high sensitivity, can be used up to high temperatures, and has extremely high reliability.

Example 15 For the purpose of obtaining a Hall element utilizing the quantum effect, a non-doped Al _0.8 Ga _0.2 As _0.16 was formed as a first compound semiconductor layer on the surface of a GaAs substrate having a diameter of 2 inches by MBE.
Sb _0.84 was grown to 1.0 μm. Next, non-doped InAs was grown as a semiconductor layer by 100 °. Next, non-doped Al _0.8 Ga _0.2 A is used as the second compound semiconductor layer.
s _0.16 Sb _0.84 was grown at 500 _° and GaAs _0.16 Sb _0.84 was grown at 100 _° as a cap layer. The electron mobility value of this InAs thin film is 14000 cm ² /
Vs, sheet resistance 220 Ω / □, electron density 2.03
× 10 ¹⁸ cm ^-3 . It was also confirmed that this thin film formed a quantum well.

Thereafter, a Hall element was manufactured in the same manner as in Example 4.

Table 3 shows the film characteristics, and Table 4 shows the device characteristics.
It was shown to.

As shown in Table 4, the Hall element of Example 15 has a large Hall output voltage of 170 mV in a magnetic field having a magnetic flux density of 500 G at the rated input voltage. This value is twice the average Hall output voltage of the GaAs Hall element. Further, the temperature change of the Hall output voltage was the same as that in Example 12, and excellent temperature characteristics were exhibited even at 100 ° C. or more. Further, even if the temperature change of the element resistance value exceeds 150 ° C. as in Example 12, the resistance value does not decrease and the heat resistance is extremely good. This element is 1
It has been clarified that it can be used even at a conventionally impossible high temperature of 00 to 150 ° C. In addition, it was found that there was no problem with use on the low temperature side even at −50 ° C., and it was found that reliability was obtained over a wide temperature range. As described above, the Hall element manufactured using the laminate of the present invention has a large Hall output voltage in a magnetic field, that is, high sensitivity, can be used up to high temperatures, and has extremely high reliability.

Example 16 For the purpose of obtaining a Hall element utilizing the quantum effect, a non-doped Al _0.8 Ga _0.2 As _0.23 was formed as a first compound semiconductor layer on the surface of a GaAs substrate having a diameter of 2 inches by MBE.
Sb _0.77 was grown 1.0 μm. Next, non-doped In _0.9 Ga _0.1 As was grown as a semiconductor layer by 150 °. Next, as a second compound semiconductor layer, non-doped Al
_0.8 Ga _0.2 As _0.23 Sb _0.77 is grown at 500 _°, and GaAs _0.23 Sb _0.77 is further grown at 100 _° as a cap layer.
Grew. This In _0.9 Ga _0.1 As thin film has an electron mobility of 14000 cm ² / Vs and a sheet resistance of 30.
It was 0 Ω / □ and the electron concentration was 0.99 × 10 ¹⁸ cm ⁻³ .
It was also confirmed that this thin film formed a quantum well.

Thereafter, a Hall element was manufactured in the same manner as in Example 4.

Table 3 shows film characteristics, and Table 4 shows device characteristics.
It was shown to.

As shown in Table 4, the Hall element of Example 16 has a large Hall output voltage of 215 mV at a rated input voltage in a magnetic field having a magnetic flux density of 500 G. This value is twice the average Hall output voltage of the GaAs Hall element. Further, the temperature change of the Hall output voltage showed the same characteristics as those of Example 12. Further, the temperature dependence of the element resistance value was extremely small up to about 150 ° C. as in Example 12, and the resistance value did not decrease, indicating that the device had excellent temperature characteristics. As described above, since the temperature change of the element resistance value is extremely small, an element manufactured by resin molding using a standard mini-mold type has a heat dissipation coefficient of about 2.3 mW / ° C., which was conventionally impossible. It has been found that it can be used even at high temperatures. In addition, it was found that use at a low temperature side did not cause any problem even at −50 ° C., and it was found that the film was reliable over a wide temperature range. As described above, the Hall element manufactured using the laminate of the present invention has a large Hall output voltage in a magnetic field, that is, high sensitivity, can be used up to high temperatures, and has extremely high reliability.

Example 17 For the purpose of obtaining a Hall element utilizing the quantum effect, a non-doped Al _0.8 Ga _0.2 As _0.32 was formed as a first compound semiconductor layer on the surface of a GaAs substrate having a diameter of 2 inches by MBE.
Sb _0.68 was grown 1.0 μm. Next, non-doped In _0.8 Ga _0.2 As was grown at 150 ° as a semiconductor layer. Next, as a second compound semiconductor layer, non-doped Al
_0.8 Ga _0.2 As _0.32 Sb _0.68 is grown at 500 _°, and GaAs _0.32 Sb _0.68 is further grown at 100 _° as a cap layer.
Grew. The In _0.8 Ga _0.2 As thin film has an electron mobility of 13000 cm ² / Vs and a sheet resistance of 32.
It was 0 Ω / □ and the electron concentration was 1.00 × 10 ¹⁸ cm ⁻³ .
It was also confirmed that this thin film formed a quantum well.

Thereafter, a Hall element was manufactured in the same manner as in Example 4.

Table 3 shows the film characteristics, and Table 4 shows the device characteristics.
It was shown to.

As shown in Table 4, the Hall element of Example 17 has a large Hall output voltage of 205 mV in a magnetic field having a magnetic flux density of 500 G at a rated input voltage. This value is twice the average Hall output voltage of the GaAs Hall element. FIG. 13 shows the temperature characteristics of the Hall output voltage. The temperature change of the Hall output voltage at a constant voltage is small even at 100 ° C. or higher, indicating excellent temperature characteristics. As shown in FIG. 14, the temperature change of the element resistance did not decrease at all to about 180 ° C., indicating that the element had excellent temperature characteristics. The element manufactured by resin molding with a standard mini-mold type has a coefficient of heat dissipation of about 2.3 mW / ° C. This element can be used even at a high temperature of 100 to 180 ° C, which is impossible conventionally. It became clear what we could do. In addition, it was found that the use on the low temperature side did not cause any problem even at −60 ° C., and it was found that it was reliable over a wide temperature range. As described above, the Hall element manufactured using the laminate of the present invention has a large Hall output voltage in a magnetic field, that is, high sensitivity, and can be used up to high temperatures,
The reliability is extremely high.

Comparative Example 5 In the same manner as in Example 17, a non-doped Al _0.8 Ga _0.2 As _0.6 Sb _0.4 was grown to 1.0 μm on the surface of a GaAs substrate having a diameter of 2 inches. Next, non-doped In _0.8 Ga
_0.2 As was grown at 150 °. Next, the non-doped A
l _0.8 Ga _0.2 As _0.6 Sb _0.4 is grown at 500 °
Further, GaAs _0.6 Sb _0.4 is added as a cap layer to 100
ÅGrowed. The surface morphology of the grown thin film is slightly cloudy. The electron mobility of the In _0.8 Ga _0.2 As thin film is 2000 cm ² / Vs, and the sheet resistance is 110.
0 Ω / □ and the electron concentration were 1.89 × 10 ¹⁸ cm ⁻³ . A Hall element was manufactured in the same manner as in Example 4, but the Hall output voltage was as small as 30 mV, and the input resistance was as high as 2.2 kΩ. As for the temperature characteristics, the Hall output voltage and the input resistance both changed greatly in temperature, and the input resistance value in the high-temperature portion was greatly reduced.

Example 18 In order to obtain a Hall element utilizing the quantum effect, a non-doped Al _0.8 Ga _0.2 As _0.45 was formed as a first compound semiconductor layer on the surface of a GaAs substrate having a diameter of 2 inches by MBE.
Sb _0.55 was grown to 1.0 μm. Next, non-doped In _0.65 Ga _0.35 As was grown as a semiconductor layer by 150 °. Next, as a second compound semiconductor layer, non-doped Al
_0.8 Ga _0.2 As _0.45 Sb _0.55 is grown at 500 °, and GaAs _0.45 Sb _0.55 is further grown at 100 _° as a cap layer.
Grew. This In _0.65 Ga _0.35 As thin film has an electron mobility of 14000 cm ² / Vs and a sheet resistance of 36.
It was 0 Ω / □ and the electron concentration was 0.83 × 10 ¹⁸ cm ⁻³ .
It was also confirmed that this thin film formed a quantum well.

Thereafter, a Hall element was manufactured in the same manner as in Example 4.

Table 3 shows film characteristics, and Table 4 shows device characteristics.
It was shown to.

As shown in Table 4, the Hall element of Example 18 has a large Hall output voltage of 205 mV in a magnetic field having a magnetic flux density of 500 G at a rated input voltage. This value is twice the average Hall output voltage of the GaAs Hall element. Further, the temperature change of the Hall output voltage at a constant voltage is small even at 100 ° C. or more, indicating excellent temperature characteristics. In addition, the temperature change of the element resistance did not drop to about 180 ° C. at all, indicating that the element had excellent temperature characteristics. The element manufactured by resin molding with a standard mini-mold type has a coefficient of heat dissipation of about 2.3 mW / ° C.
It has been clarified that it can be used even at a high temperature of 180 ° C., which is not possible conventionally. In addition, use on the low temperature side,
There was no problem even at −60 ° C., and it was found that the film was reliable over a wide temperature range. As described above, the Hall element manufactured using the laminate of the present invention has a large Hall output voltage in a magnetic field, that is, high sensitivity, can be used up to high temperatures, and has extremely high reliability.

Example 19 A non-doped Al _0.8 Ga _0.2 was formed as a first compound semiconductor layer on the surface of a GaAs substrate having a diameter of 2 inches by MBE.
As _0.75 Sb _0.25 was grown 1.0 μm. Next, non-doped In _0.3 Ga _0.7 As was grown as a semiconductor layer by 150 °. Next, a non-doped Al _0.8 Ga _0.2 As _0.75 Sb _0.25 is grown at 500 ° as a second compound semiconductor layer, and a GaAs _0.75 Sb _0.25 is further formed as a cap layer by 1１.
Grow by $ 00. The electron mobility of this In _0.3 Ga _0.7 As thin film was 10,000 cm ² / Vs, the sheet resistance was 400 Ω / □, and the electron concentration was 1.04 × 10 ¹⁸ cm ⁻³ . It was also confirmed that this thin film formed a quantum well.

Thereafter, a Hall element was manufactured in the same manner as in Example 4.

Table 3 shows the film characteristics, and Table 4 shows the device characteristics.
It was shown to.

As shown in Table 4, the Hall element of Example 19 has a large Hall output voltage of 150 mV in a magnetic field having a magnetic flux density of 500 G at the rated input voltage. This value is 1.5 times or more the average Hall output voltage of the GaAs Hall element. Further, the temperature change of the Hall output voltage at a constant voltage is small even at 100 ° C. or more, indicating excellent temperature characteristics. In addition, the temperature change of the element resistance did not drop to about 180 ° C. at all, indicating that the element had excellent temperature characteristics. The element manufactured by resin molding with a standard mini-mold type has a coefficient of heat dissipation of about 2.3 mW / ° C. This element can be used even at a high temperature of 100 to 180 ° C, which is impossible conventionally. It became clear what we could do. In addition, it was found that the use on the low temperature side did not cause any problem even at −60 ° C., and it was found that it was reliable over a wide temperature range. As described above, the Hall element manufactured using the laminate of the present invention has a large Hall output voltage in a magnetic field, that is, high sensitivity, and can be used up to high temperatures,
The reliability is extremely high.

Example 20 A non-doped Al _0.8 In _0.2 as a first compound semiconductor layer was formed on the surface of a GaAs substrate having a diameter of 2 inches by MBE.
As _0.3 Sb _0.7 was grown to 1.0 μm. Next, as a semiconductor layer, undoped In _0.8 Ga _0.2 As _0.8 Sb _0.2
Was grown 150 °. Next, a non-doped Al _0.8 In _0.2 As _0.3 Sb _0.7 is used as a second compound semiconductor layer.
Grow by $ 00. This In _0.8 Ga _0.2 As _0.8 Sb
_0.2 The electron mobility value of the thin film is 15000 cm ² / Vs,
Sheet resistance 300Ω / □, electron density 0.93 × 10
¹⁸ cm ^-3 . It was also confirmed that this thin film formed a quantum well.

Thereafter, a Hall element was manufactured in the same manner as in Example 9.

Table 3 shows the film characteristics, and Table 4 shows the device characteristics.
It was shown to.

As shown in Table 4, the Hall element of Example 20 has a large Hall output voltage of 210 mV in a magnetic field having a magnetic flux density of 500 G at a rated input voltage. This value is more than twice the average Hall output voltage of the GaAs Hall element. Further, the temperature change of the Hall output voltage is small as in the seventeenth embodiment, and the temperature change of the element resistance does not drop to about 180 ° C. as in the seventeenth embodiment, and the temperature dependency is excellent. I understood. The element manufactured by resin molding with a standard mini-mold type has a coefficient of heat dissipation of about 2.3 mW / ° C. This element can be used even at a high temperature of 100 to 180 ° C, which is impossible conventionally. It became clear what we could do.
In addition, it was found that there was no problem with use on the low temperature side even at −60 ° C., and it was found that reliability was obtained over a wide temperature range. As described above, the Hall element manufactured using the laminate of the present invention has a large Hall output voltage in a magnetic field, that is, high sensitivity, can be used up to high temperatures, and has extremely high reliability.

Comparative Example 6 As in Example 20, non-doped Al _0.8 In _0.2 A
s _0.7 Sb _0.3 was grown 1.0 μm. Next, non-doped In _0.8 Ga _0.2 As _0.8 Sb _0.2 was grown at 150 °. Next, non-doped Al _0.8 In _0.2 As _0.7 S
b _0.3 was grown at 500 °. The surface morphology of this grown thin film was poor, the sheet resistance was extremely high at 1050 Ω / □, and the electron mobility was 2200 cm ² / Vs. A Hall element was fabricated in the same manner as in Example 9, and the element characteristics were measured. The Hall output voltage was as small as 30 mV, and the input resistance was as high as 2.1 kΩ. As for the temperature characteristics, the Hall output voltage and the input resistance both changed greatly in temperature, and the input resistance value in the high-temperature portion was greatly reduced.

(Example 21) Non-doped Al _0.8 In _0.2 as a first compound semiconductor layer was formed on the surface of a GaAs substrate having a diameter of 2 inches by MBE.
As _0.05 Sb _0.95 was grown 1.0 μm. Next, a non-doped In _0.8 Ga _0.2 As _0.5 Sb _0.5
Was grown 150 °. Next, non-doped Al _0.8 In _0.2 As _0.05 Sb _0.95 was used as the second compound semiconductor layer for 5 _minutes .
00Å grown. This In _0.8 Ga _0.2 As _0.5
The electron mobility value of the Sb _0.5 thin film is 15000 cm ² / V
s, sheet resistance value is 290Ω / □, electron density 0.96 ×
It was 10 ¹⁸ cm ^-3 . It was also confirmed that this thin film formed a quantum well.

Thereafter, a Hall element was manufactured in the same manner as in Example 9.

Table 3 shows film characteristics, and Table 4 shows device characteristics.
It was shown to.

As shown in Table 4, the Hall element of Example 21 has a large Hall output voltage of 215 mV at a rated input voltage in a magnetic field having a magnetic flux density of 500 G. This value is more than twice the average Hall output voltage of the GaAs Hall element. Further, the temperature change of the Hall output voltage is small as in the seventeenth embodiment, and the temperature change of the element resistance does not drop to about 180 ° C. as in the seventeenth embodiment, and the temperature dependency is excellent. I understood. The element manufactured by resin molding with a standard mini-mold type has a coefficient of heat dissipation of about 2.3 mW / ° C. This element can be used even at a high temperature of 100 to 180 ° C, which is impossible conventionally. It became clear what we could do.
In addition, it was found that there was no problem with use on the low temperature side even at −60 ° C., and it was found that reliability was obtained over a wide temperature range. As described above, the Hall element manufactured using the laminate of the present invention has a large Hall output voltage in a magnetic field, that is, high sensitivity, can be used up to high temperatures, and has extremely high reliability.

Example 22 Non-doped Al _0.4 In _0.6 was formed as a first compound semiconductor layer on the surface of a GaAs substrate having a diameter of 2 inches by MBE.
As _0.05 Sb _0.95 was grown to 1.0 μm. Next, as a semiconductor layer, non-doped In _0.8 Ga _0.2 As _0.2 Sb _0.8
Was grown 150 °. Next, non-doped Al _0.4 In _0.6 As _0.05 Sb _0.95 was used as the second compound semiconductor layer.
00Å grown. This In _0.8 Ga _0.2 As _0.2
The electron mobility value of the Sb _0.8 thin film is 16000 cm ² / V
s, sheet resistance value is 270Ω / □, electron density 0.96 ×
It was 10 ¹⁸ cm ^-3 . It was also confirmed that this thin film formed a quantum well.

Thereafter, a Hall element was manufactured in the same manner as in Example 9.

Table 3 shows the film characteristics, and Table 4 shows the device characteristics.
It was shown to.

As shown in Table 4, the Hall element of Example 22 has a large Hall output voltage of 230 mV in a magnetic field having a magnetic flux density of 500 G at the rated input voltage. This value is more than twice the average Hall output voltage of the GaAs Hall element. Further, the temperature change of the Hall output voltage is small as in the seventeenth embodiment, and the temperature change of the element resistance does not drop to about 180 ° C. as in the seventeenth embodiment, and the temperature dependency is excellent. I understood. The element manufactured by resin molding with a standard mini-mold type has a coefficient of heat dissipation of about 2.3 mW / ° C. This element can be used even at a high temperature of 100 to 180 ° C, which is impossible conventionally. It became clear what we could do.
In addition, it was found that there was no problem with use on the low temperature side even at −60 ° C., and it was found that reliability was obtained over a wide temperature range. As described above, the Hall element manufactured using the laminate of the present invention has a large Hall output voltage in a magnetic field, that is, high sensitivity, can be used up to high temperatures, and has extremely high reliability.

Example 23 A non-doped Al _0.8 Ga _0.2 as a first compound semiconductor layer was formed on the surface of a GaAs substrate having a diameter of 2 inches by MBE.
As _0.16 Sb _0.84 was grown 1.0 μm. Next, only Sb was irradiated to grow only one atomic layer. Next, at the same time as the irradiation of Sb was stopped, only In was irradiated to only one atomic layer.
Subsequently, As is irradiated, and a non-doped I
nAs was grown 150 °. Next, only In is again set to 1
Irradiation was performed only on the atomic layer, irradiation of In was stopped, and irradiation of Sb alone was performed. After forming one atomic layer of Sb, non-doped Al _0.8 Ga _0.2 As _0.16 Sb is used as the second compound semiconductor layer.
_0.84 grown to 500 _°, and Ga
As _0.16 Sb _0.84 was grown at 100 _° . This InAs
The electron mobility value of the thin film is 21000 cm ² / Vs, the sheet resistance value is 205 Ω / □, and the electron concentration is 0.97 × 10 ¹⁸ c
m ^-3 . InAs layer and Al _0.8 Ga _0.2 As _0.16
The electron mobility was greatly improved by forming In—Sb bonding species at the interface of the Sb _0.84 layer.

Thereafter, a Hall element was manufactured in the same manner as in Example 4.

Table 3 shows the film characteristics, and Table 4 shows the device characteristics.
It was shown to.

As shown in Table 4, the Hall element of Example 23 has a large Hall output voltage of 260 mV in a magnetic field having a magnetic flux density of 500 G at the rated input voltage. This value is three times or more the average Hall output voltage of the GaAs Hall element. Further, the temperature characteristics of the Hall output voltage were the same as those in Example 12, and showed good temperature characteristics even at 100 ° C. or higher. Also, the temperature change of the element resistance did not drop at all to about 150 ° C. as in the case of Example 12, indicating that the temperature dependency was excellent. The element manufactured by resin molding with a standard mini-mold type has a coefficient of heat dissipation of about 2.3 mW / ° C. This element can be used even at a high temperature of 100 to 150 ° C, which is impossible conventionally. It became clear what we could do. Also,
The use on the low temperature side has no problem even at −50 ° C., and it has been found that it is reliable over a wide temperature range. As described above, the Hall element manufactured using the laminate of the present invention has a large Hall output voltage in a magnetic field, that is, high sensitivity, can be used up to high temperatures, and has extremely high reliability.

Example 24 A non-doped Al _0.8 Ga _0.2 as a first compound semiconductor layer was formed on the surface of a GaAs substrate having a diameter of 2 inches by MBE.
As _0.32 Sb _0.68 was grown 1.0 μm. Next, only Sb was irradiated to grow only one atomic layer. Next, at the same time as the irradiation of Sb was stopped, only In was irradiated to only one atomic layer.
Subsequently, As and Ga were irradiated, and non-doped In _0.8 Ga _0.2 As was grown as a semiconductor layer by 150 °. Next, only In was irradiated again with only one atomic layer, and the irradiation of In was stopped, and at the same time, only Sb was irradiated. After forming one atomic layer of Sb, a non-doped Al _0.8
Ga _0.2 As _0.32 Sb _0.68 was grown at 500 _°, and GaAs _0.32 Sb _0.68 was grown at 100 _° as a cap layer. This In _0.8 Ga _0.2 As thin film has an electron mobility of 16000 cm ² / Vs and a sheet resistance of 300Ω.
/ □, and the electron concentration was 0.87 × 10 ¹⁸ cm ⁻³ . In
_0.8 Ga _0.2 As layer and Al _0.8 Ga _0.2 As _0.32 Sb
_The electron mobility was significantly improved by forming In—Sb bonding species at the interface of the _0.68 layer.

Thereafter, a Hall element was manufactured in the same manner as in Example 4.

Table 3 shows the film characteristics, and Table 4 shows the device characteristics.
It was shown to.

As shown in Table 4, the Hall element of Example 24 has a large Hall output voltage of 225 mV in a magnetic field having a magnetic flux density of 500 G at the rated input voltage. This value is more than twice the average Hall output voltage of the GaAs Hall element. Further, the temperature characteristics of the Hall output voltage were the same as those in Example 17, and showed a good temperature characteristic even at 100 ° C. or higher. In addition, the temperature change of the element resistance did not drop at all to about 180 ° C. as in Example 17, indicating that the device had excellent temperature dependency. The element manufactured by resin molding with a standard mini-mold type has a coefficient of heat dissipation of about 2.3 mW / ° C. This element can be used even at a high temperature of 100 to 180 ° C, which is impossible conventionally. It became clear what we could do. Also,
The use on the low temperature side has no problem even at −60 ° C., and it has been found that it is reliable over a wide temperature range. As described above, the Hall element manufactured using the laminate of the present invention has a large Hall output voltage in a magnetic field, that is, high sensitivity, can be used up to high temperatures, and has extremely high reliability.

The above results are summarized in Tables 1 and 2.
Table 4 below. Ranks A, B and C indicating the temperature characteristics in Tables 2 and 4 are as follows: A is very excellent in temperature characteristics,
Even at a high temperature, no decrease in the element resistance is observed. B
Has excellent temperature characteristics, but shows a slight decrease in element resistance at high temperatures, but does not hinder practical use. C has a large decrease in element resistance at high temperatures, which is a problem in practical temperature characteristics. To indicate that there is.

[0134]

[Table 1]

[0135]

[Table 2]

[0136]

[Table 3]

[0137]

[Table 4]

As described above, the present invention has been described with reference to the embodiments.
The present invention is not limited to these, and further, there are many examples based on the present invention, and various applications are possible, all of which are within the scope of the present invention.

[0139]

As described above, the laminate of the present invention is
When extremely high electron mobility can be realized and applied as a magnetic sensor, a magnetic sensor with high sensitivity and high output, which has never existed before, can be manufactured. In addition, thin film formation and element formation processes
It can be mass-produced and is an engineeringly useful technology. Furthermore, good crystallinity _{In x Ga 1-x As y} Sb 1-y (0 <X
≦ 1.0, 0 ≦ y <1.0) The thin film layer is used as the magnetic sensing part, the temperature dependency of the magnetic sensor output and the element resistance is small, and the element resistance does not decrease to a high temperature. It has a wide temperature range and high reliability. For this reason, a wide range of applications that could not be achieved conventionally are possible, and the industrial usefulness is immense.

[Brief description of the drawings]

FIGS. 1A and 1B are a cross-sectional view and a top view showing a structure of a Hall element, which is an example of a magnetic sensor manufactured using a laminate of the present invention. FIGS.

FIG. 2 is a cross-sectional view showing another embodiment of the present invention having a second compound semiconductor layer.

FIG. 3 is a cross-sectional view showing an embodiment having a structure in which electrons are supplied from first and second compound semiconductor layers.

FIG. 4 is an enlarged schematic view of the interface bonding species between the InAs layer and the first compound semiconductor layer.

5A and 5B are a cross-sectional view and a top view illustrating an example of a magnetoresistive element which is an example of a magnetic sensor manufactured using the multilayer body of the present invention.

FIG. 6 shows an example of a magnetic sensor manufactured using the laminate of the present invention, which is a Hall element and a SiI on which an IC circuit is formed.
It is a typical sectional view showing the example of the hybrid magnetic sensor of the present invention where the chip of C was molded in the same package.

FIG. 7 is a characteristic diagram illustrating a temperature characteristic of a Hall output voltage according to the first embodiment of the present invention.

FIG. 8 is a characteristic diagram illustrating a temperature change of an element resistance value according to the first embodiment of the present invention.

FIG. 9 is a characteristic diagram showing a temperature characteristic of a Hall output voltage in Embodiment 5 of the present invention.

FIG. 10 is a diagram showing a temperature change of an element resistance value in Example 5 of the present invention.

FIG. 11 is a characteristic diagram showing a temperature characteristic of a Hall output voltage in Example 12 of the present invention.

FIG. 12 is a characteristic diagram showing a temperature change of an element resistance value in Example 12 of the present invention.

FIG. 13 is a characteristic diagram showing a temperature characteristic of a Hall output voltage in Example 17 of the present invention.

FIG. 14 is a characteristic diagram showing a temperature change of an element resistance value in Example 17 of the present invention.

[Explanation of symbols]

 Reference Signs List 1 substrate 2 first compound semiconductor layer 3 semiconductor layer 4 ohmic electrode 5 electrode for bonding 6 second compound semiconductor layer 7 donor impurity 8 passivation layer 9 donor impurity 10 short bar electrode 11 magnetic sensor chip 12 SiIC chip 13 island Part 14 Lead 15 Wire 16 Mold resin

──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. ⁷ Identification code FI H01L 43/08 (72) Inventor Tatsuro Iwabuchi 2nd, Samejima, Fuji City, Shizuoka Prefecture Asahi Kasei Corporation (56) References JP-A-4-333242 (JP, A) JP-A-1-256175 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) H01L 43/06 H01L 21/203 H01L 21/338 H01L 29/778 H01L 29/812 H01L 43/08

Claims (21)

(57) [Claims] 1. An Al, Ga, In, and Al substrate formed on a substrate.
A first compound semiconductor layer containing three or more elements containing Sb selected from the group consisting of As and P, and a semiconductor layer made of an InAs thin film formed on the first compound semiconductor layer, wherein the first compound semiconductor is made of InAs Having a lattice constant within ± 5% of the lattice constant of, having a resistance value at least five times that of the semiconductor layer made of the thin film, and having a band gap energy larger than that of InAs. A laminate comprising a compound semiconductor, wherein the semiconductor layer is doped with a donor impurity. 2. The laminate according to claim 1, wherein the semiconductor layer formed of the thin film has an electron concentration in a range of 5 × 10 ¹⁶ to 8 × 10 ¹⁸ / cm ³ . 3. The method according to claim 1, wherein the first compound semiconductor layer is doped with a donor impurity.
3. The laminate according to item 1. 4. An Al, Ga, In, and Al substrate formed on a substrate.
A semiconductor comprising a first compound semiconductor layer containing three or more elements containing Sb selected from the group consisting of As and P, and a thin film of In _x Ga _1-x As (0 <x <1.0) formed on the layer. The first compound semiconductor has a lattice constant within ± 5% of the lattice constant of In _x Ga _1-x As, and has a resistance value that is at least five times or more that of the semiconductor layer composed of the thin film. And a compound semiconductor having a band gap energy larger than that of In _x Ga _1-x As. 5. An Al, Ga, In, and Al substrate formed on a substrate.
A first compound semiconductor layer of three or more elements including Sb is selected from the group consisting of As and P, formed on the layer _{In x Ga 1-x As y} Sb 1-y (0 <x ≦ 1.0 , 0 ≦ y
<1.0) having a semiconductor layer formed of a thin film, ± of the first compound semiconductor _{In x Ga 1-x As y} Sb 1-y lattice constant 5%
Having a lattice constant of not more than 5, having a resistance value of at least 5 times or more that of the semiconductor layer made of the thin film, and In _x Ga _1-x
A laminate including a compound semiconductor, which has a band gap energy larger than As _y Sb _1-y . 6. The laminate according to claim 4, wherein the semiconductor layer comprising the thin film has an electron concentration in a range of 5 × 10 ¹⁶ to 8 × 10 ¹⁸ / cm ³ . 7. A semiconductor device according to claim 4, wherein said first compound semiconductor layer is doped with a donor impurity.
The laminate according to any one of the above items. 8. The semiconductor according to claim 4, wherein said semiconductor comprising said thin film is doped with a donor impurity.
The laminate according to any one of the above items. 9. The method according to claim 9, wherein the donor impurity is Si, S, Ge,
The laminate according to claim 1, wherein the laminate is any one of Se. 10. An upper surface of a semiconductor layer comprising the thin film,
A second compound semiconductor layer is formed, wherein the second compound semiconductor has a lattice constant of ± 5% of a lattice constant of the semiconductor layer composed of the thin film;
The semiconductor layer having a lattice constant of not more than 5 times, having a resistance value at least 5 times or more that of the semiconductor layer made of the thin film, and having a larger band gap energy than the semiconductor layer made of the thin film. 2. The laminate according to 1. 11. The laminate according to claim 10, wherein an electron concentration of the semiconductor layer formed of the thin film is in a range of 5 × 10 ¹⁶ to 8 × 10 ¹⁸ / cm ³ . 12. The method according to claim 1, wherein both or one of the first compound semiconductor layer and the second compound semiconductor layer is doped with a donor impurity.
12. The laminate according to 0 or 11. 13. The method according to claim 13, wherein:
A second compound semiconductor layer is formed, wherein the second compound semiconductor has a lattice constant of ± 5% of a lattice constant of the semiconductor layer composed of the thin film;
The semiconductor layer having a lattice constant of not more than 5 times, having a resistance value at least 5 times or more that of the semiconductor layer made of the thin film, and having a larger band gap energy than the semiconductor layer made of the thin film. 6. The laminate according to any one of items 4 and 5. 14. The laminate according to claim 13, wherein the semiconductor layer formed of the thin film has an electron concentration in a range of 5 × 10 ¹⁶ to 8 × 10 ¹⁸ / cm ³ . 15. The semiconductor device according to claim 1, wherein both or one of the first compound semiconductor layer and the second compound semiconductor layer is doped with a donor impurity.
15. The laminate according to 3 or 14. 16. The laminate according to claim 13, wherein a donor impurity is doped in the semiconductor made of the thin film. 17. The method according to claim 17, wherein the donor impurity is Si, S, G
11. It is any one of e and Se.
13. The laminate according to any one of items 12, 15, and 16. 18. The method according to claim 1, wherein the lattice constant of InAs is ± 5 on the substrate.
%, Al, Ga, I having a lattice constant within 0.1% and a band gap energy larger than InAs.
forming a first compound semiconductor layer containing three or more elements containing Sb selected from the group consisting of n, As, and P; and forming a donor impurity-doped InA layer formed on the layer.
a step of forming a semiconductor layer composed of an s thin film, wherein the first compound semiconductor layer has a resistance value of at least 5 times or more that of the semiconductor layer composed of the thin film. Production method. 19. has a In _x Ga _1-x As lattice constant within ± 5% of the lattice constant of over a substrate, and In _x
Forming a first compound semiconductor layer of three or more elements containing Sb selected from the group consisting of Al, Ga, In, As and P having a band gap energy larger than Ga _1-x As; In _x Ga _1-x formed in
Forming a semiconductor layer made of a thin film of As (0 <x <1.0), wherein the first compound semiconductor layer has a resistance value that is at least five times or more that of the semiconductor layer made of the thin film. A method for manufacturing a laminate including a compound semiconductor. To 20. On the substrate _{In x Ga 1-x As y} Sb
_It has a lattice constant within ± 5% of the lattice constant of _1-y ,
Forming and _{In x Ga 1-x As y} Sb 1-y Al having a larger band gap energy than, Ga, In, the first compound semiconductor layer of three or more elements including Sb is selected from the group consisting of As and P a step of, formed on the layer _{in x Ga 1-x as y} Sb 1-y (0 <x ≦ 1.0, 0
≦ y <1.0) forming a semiconductor layer composed of a thin film, wherein the first compound semiconductor layer has a resistance value of at least 5 times or more that of the semiconductor layer composed of the thin film. The manufacturing method of the laminated body containing. 21. An upper surface of the semiconductor layer comprising the thin film,
Having a lattice constant within ± 5% of the lattice constant of the semiconductor layer;
2. The method according to claim 1, further comprising the step of forming a second compound semiconductor layer having a band gap energy larger than that of the semiconductor layer made of the thin film and having a resistance value at least five times that of the semiconductor layer made of the thin film. 21. The method for producing a laminate according to any one of Items 18 to 20.