JP3045913B2 - Semiconductor laser device and method of manufacturing the same - Google Patents

Semiconductor laser device and method of manufacturing the same

Info

Publication number
JP3045913B2
JP3045913B2 JP5329052A JP32905293A JP3045913B2 JP 3045913 B2 JP3045913 B2 JP 3045913B2 JP 5329052 A JP5329052 A JP 5329052A JP 32905293 A JP32905293 A JP 32905293A JP 3045913 B2 JP3045913 B2 JP 3045913B2
Authority
JP
Japan
Prior art keywords
optical component
semiconductor laser
adhesive
frame
laser device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP5329052A
Other languages
Japanese (ja)
Other versions
JPH07183414A (en
Inventor
秀男 永井
秀行 中西
明 上野
昭男 吉川
一成 太田
Original Assignee
松下電子工業株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 松下電子工業株式会社 filed Critical 松下電子工業株式会社
Priority to JP5329052A priority Critical patent/JP3045913B2/en
Publication of JPH07183414A publication Critical patent/JPH07183414A/en
Application granted granted Critical
Publication of JP3045913B2 publication Critical patent/JP3045913B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16195Flat cap [not enclosing an internal cavity]

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、光情報処理、光計測お
よび光通信等の分野において使用される半導体レーザ装
置とその製造方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor laser device used in fields such as optical information processing, optical measurement and optical communication, and a method of manufacturing the same.

【0002】[0002]

【従来の技術】従来のテレビジョン信号を記録再生する
ための磁気ヘッドによるビデオテープ方式に対して、光
学ヘッドを使用し、情報を含む媒体上に収束した光ビー
ムを照射し、媒体から反射された光を検出して媒体の情
報内容を映像や音として再生する光ディスク方式の普及
が最近著しくなってきた。媒体としてはオーディオ分野
ではコンパクトディスク、ビデオ分野ではレーザディス
クがよく知られており、光ディスクから情報を読み出す
ために光学ヘッドとして半導体レーザ装置を用いた光ピ
ックアップ装置が用いられる。これらの半導体レーザ応
用による光記録再生技術は大型のコンピュータネットワ
ーク、またはパーソナルコンピュータにおけるデータ記
憶にも適用できるものとしていわゆるマルチメディヤと
呼ばれる高度情報社会の中枢を担う技術として発展しつ
つある。
2. Description of the Related Art In contrast to a conventional video tape system using a magnetic head for recording and reproducing television signals, an optical head is used to irradiate a converged light beam onto a medium containing information, and the light beam is reflected from the medium. Recently, the use of an optical disk system for detecting information light and reproducing the information content of a medium as video or sound has become remarkable. As a medium, a compact disk is well known in the audio field, and a laser disk is well known in the video field, and an optical pickup device using a semiconductor laser device as an optical head is used to read information from the optical disk. The optical recording / reproducing technology using these semiconductor lasers has been developed as a technology which plays a central role in a so-called multimedia, which is a center of the advanced information society, as being applicable to data storage in a large computer network or a personal computer.

【0003】図5はその光ピックアップ装置の一例の構
成を示すものであり、図において1は光ディスク、2は
対物レンズ、3は対物レンズ2を動かすアクチュエー
タ、4は反射鏡、5はビームスプリッタ、6は3ビーム
発生グレーティング、7は半導体レーザ、8は受光素
子、9はレーザ出射光、10は光ディスク1により変調
され反射されて戻ってきた信号光である。上述のように
従来の光ピックアップ装置では半導体レーザ7、3ビー
ム発生グレーティング6、ビームスプリッタ5、受光素
子8、反射鏡4および対物レンズ2がそれぞれ別個の部
品から構成されており、部品点数が多く、かつコストが
高くなるという課題があった。
FIG. 5 shows the structure of an example of the optical pickup device. In FIG. 5, 1 is an optical disk, 2 is an objective lens, 3 is an actuator for moving the objective lens 2, 4 is a reflecting mirror, 5 is a beam splitter, Reference numeral 6 denotes a three-beam generating grating, 7 denotes a semiconductor laser, 8 denotes a light receiving element, 9 denotes a laser output light, and 10 denotes a signal light that has been modulated and reflected by the optical disc 1 and returned. As described above, in the conventional optical pickup device, the semiconductor laser 7, the three-beam generating grating 6, the beam splitter 5, the light receiving element 8, the reflecting mirror 4, and the objective lens 2 are each composed of separate components, and the number of components is large. In addition, there is a problem that the cost increases.

【0004】この課題を改善するために発明者らは、図
6に示すように上述した別個の部品類を集積化し、一体
化して長期信頼性および量産性に優れた半導体レーザ装
置および光ピックアップ装置を提案した。図6におい
て、11は図5における半導体レーザ7、3ビーム発生
グレーティング6、ビームスプリッタ5、受光素子8を
一体に集積化し、ホログラム素子等の光学部品12を備
えた半導体レーザ装置である。
In order to solve this problem, the present inventors have integrated the above-mentioned separate components as shown in FIG. 6 and integrated them into a semiconductor laser device and an optical pickup device having excellent long-term reliability and mass productivity. Suggested. In FIG. 6, reference numeral 11 denotes a semiconductor laser device in which the semiconductor laser 7, the three-beam generating grating 6, the beam splitter 5, and the light receiving element 8 in FIG.

【0005】つぎにこの光学部品12を備えた半導体レ
ーザ装置11の詳細な構造を図7に示す。図7におい
て、13は半導体レーザチップ、14はシリコン基板等
よりなる放熱板、14aは放熱板14の一部に形成され
た受光素子、15は枠体、16は外部リード、17は半
導体レーザチップ13より発生したレーザ出射光、18
は保護板、19は保護板18および枠体15で構成され
る樹脂パッケージである。
Next, FIG. 7 shows a detailed structure of the semiconductor laser device 11 having the optical component 12. As shown in FIG. In FIG. 7, 13 is a semiconductor laser chip, 14 is a radiator plate made of a silicon substrate or the like, 14a is a light receiving element formed on a part of the radiator plate 14, 15 is a frame, 16 is an external lead, and 17 is a semiconductor laser chip. Laser emission light generated from 13, 18
Denotes a protection plate, and 19 denotes a resin package formed by the protection plate 18 and the frame 15.

【0006】上記構成において、半導体レーザチップ1
3は枠体15および保護板18よりなる中空の樹脂パッ
ケージ19内に収められ、その上部開口面に光学部品1
2を接着剤120によって固定し、外部からの湿気の浸
入を防止している。
In the above configuration, the semiconductor laser chip 1
Numeral 3 is housed in a hollow resin package 19 composed of a frame 15 and a protective plate 18, and the optical component 1
2 is fixed by an adhesive 120 to prevent intrusion of moisture from the outside.

【0007】[0007]

【発明が解決しようとする課題】しかしながら上記従来
の半導体レーザ装置では、光学部品12と枠体15とが
図7に見られるように接着剤120によって平面的に接
着されているためにその接着面の距離が短く、外部から
水分や湿気が浸入するおそれがあった。図8は従来の構
造を有する半導体レーザ装置を温度60℃、相対湿度9
0%の環境下において保存した場合の受光素子14aの
暗電流(リーク電流)の時間経過を測定した一例を示し
たものである。図8に示すように、このような従来の構
造では受光素子14aの特性が劣化しやすいという課題
があった。
However, in the above-described conventional semiconductor laser device, since the optical component 12 and the frame 15 are planarly bonded by the adhesive 120 as shown in FIG. Was short, and there was a risk that moisture or moisture might enter from the outside. FIG. 8 shows a semiconductor laser device having a conventional structure at a temperature of 60.degree.
This is an example in which the dark current (leakage current) of the light receiving element 14a over time when stored under an environment of 0% is measured. As shown in FIG. 8, such a conventional structure has a problem that the characteristics of the light receiving element 14a are easily deteriorated.

【0008】本発明は上記課題を解決するものであり、
長期信頼性に優れた半導体レーザ装置とその製造方法を
提供することを目的とする。
[0008] The present invention is to solve the above problems,
An object of the present invention is to provide a semiconductor laser device excellent in long-term reliability and a method for manufacturing the same.

【0009】[0009]

【課題を解決するための手段】上記目的を達成するため
に、本発明の半導体レーザ装置は、主として半導体レー
ザチップと、同半導体レーザチップを内部に収納する枠
体と保護板とよりなる樹脂パッケージと、同樹脂パッケ
ージの上面に設けられた光学部品とからなる半導体レー
ザ装置であって、前記枠体の上面内周部に前記光学部品
の厚みより小さい段差を有する切り欠き部を設け、少な
くとも同切り欠き部の側面と前記光学部品の側面の間は
第1の接着剤で接合され、前記光学部品の側面から前記
枠体の上面にわたっては第2の接着剤で接合されている
ものである。また、本発明の半導体レーザ装置は、主と
して半導体レーザチップと、同半導体レーザチップを内
部に収納する枠体と保護板とよりなる樹脂パッケージ
と、同樹脂パッケージの上面に設けられた凸状脚部を有
する光学部品とからなる半導体レーザ装置であって、前
記枠体の周囲上面部に堀状溝が設けられ、同堀状溝と前
記光学部品の凸状脚部が嵌合され、前記堀状溝と前記
状脚部すべての間は第1の接着剤で接合し、前記光学
部品の側面から前記枠体の上面にわたっては第2の接着
剤で接合されているものである。さらに、本発明の半導
体レーザ装置の製造方法は、枠体と保護板とよりなる樹
脂パッケージ内に半導体基板を設置し、前記半導体基板
の上に半導体レーザチップを設け、同半導体チップと外
部リードとの配線処理を行った後、前記枠体の上面部に
設けられた切り欠き部または凹部に第1の接着剤を充填
し、前記切り欠き部の厚さよりも大きい厚さの光学部品
の一部を前記切り欠き部に、または光学部品に形成され
た凸状脚部を前記凹部に嵌合させて、前記切り欠き部ま
たは前記凹部と前記光学部品との間に備えられたクリア
ランスにより前記半導体チップに対する前記光学部品の
位置調整を行った後硬化接着し、つぎに第2の接着剤を
前記光学部品の側面から前記枠体の上面にわたって充填
し、硬化接着させるものである。
In order to achieve the above object, a semiconductor laser device according to the present invention comprises a resin package mainly comprising a semiconductor laser chip, a frame housing the semiconductor laser chip therein, and a protective plate. When, a semiconductor laser device composed of an optical component provided on the upper surface of the resin package is provided with a cutout portion having a smaller level difference thickness of the optical component on the upper surface inner circumferential portion of the frame body, small
At least a portion between a side surface of the cutout portion and a side surface of the optical component is bonded with a first adhesive, and a portion from the side surface of the optical component to the upper surface of the frame is bonded with a second adhesive. It is. In addition, a semiconductor laser device of the present invention mainly includes a semiconductor package, a resin package including a semiconductor laser chip, a frame body for housing the semiconductor laser chip therein, and a protective plate, and a convex leg provided on an upper surface of the resin package. A moat-shaped groove provided in an upper peripheral portion of the frame body, wherein the moat-shaped groove is fitted to a convex leg of the optical component, and Groove and said convex
All of the leg-shaped portions are joined with a first adhesive, and a portion from the side surface of the optical component to the upper surface of the frame body is joined with a second adhesive. Further, in the method for manufacturing a semiconductor laser device of the present invention, a semiconductor substrate is provided in a resin package including a frame and a protective plate, a semiconductor laser chip is provided on the semiconductor substrate, and the semiconductor chip and external leads are provided. After performing the wiring process, a notch or a recess provided on the upper surface of the frame body is filled with a first adhesive, and a part of the optical component having a thickness greater than the thickness of the notch. the semiconductor chip to the notch, or a convex leg portion formed on the optical component is fitted in the recess, the clearance provided between the notch or the recess and the optical component After the position of the optical component is adjusted with respect to the optical component, the optical component is cured and adhered, and then a second adhesive is filled from the side surface of the optical component to the upper surface of the frame, and cured and adhered.

【0010】[0010]

【作用】したがって本発明によれば、枠体に凹部または
堀状溝を設け、まずその凹部または堀状溝に第1の接着
剤を充填して光学部品を嵌合させ、凹部または堀状溝に
備えられたクリアランスにより半導体レーザチップに対
する光学部品の位置調整を行うことができるのできわめ
て正確な位置調整を容易に行うことができる。また第2
の接着剤としてきわめて耐湿性、耐水性および強固な接
着力を有する気密用接着剤を用いることにより、長期信
頼性に優れた半導体レーザ装置を得ることができる。
Therefore, according to the present invention, a concave or moat-like groove is provided in the frame body, and the concave or moat-like groove is first filled with the first adhesive to fit the optical component into the concave or moat-like groove. Since the position of the optical component with respect to the semiconductor laser chip can be adjusted by the clearance provided in the above, extremely accurate position adjustment can be easily performed. Also the second
By using an airtight adhesive having extremely moisture resistance, water resistance and strong adhesive force as the adhesive of the above, a semiconductor laser device excellent in long-term reliability can be obtained.

【0011】[0011]

【実施例】以下、本発明の一実施例における半導体レー
ザ装置とその製造方法について、図1〜図4を参照しな
がら説明する。なお、図6および図7に示した装置の構
成要素と対応する要素には同じ符号を付した。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A semiconductor laser device and a method of manufacturing the same according to an embodiment of the present invention will be described below with reference to FIGS. Elements corresponding to those of the apparatus shown in FIGS. 6 and 7 are denoted by the same reference numerals.

【0012】図1は本発明の第1の実施例を示すもので
あり、その構造が図7に示す従来例と異なる点は、図1
からも明らかなように、樹脂パッケージ19を構成する
枠体15に凹部20を設け、厚みが凹部20の段差より
大きい光学部品12を凹部20に挿入し、凹部20の平
坦部および側壁部で枠体15と光学部品12とを接着固
定したことにある。
FIG. 1 shows a first embodiment of the present invention. The structure of the first embodiment differs from that of the prior art shown in FIG.
As is apparent from FIG. 2, a concave portion 20 is provided in the frame body 15 constituting the resin package 19, the optical component 12 having a thickness greater than the step of the concave portion 20 is inserted into the concave portion 20, and the flat portion and the side wall portion of the concave portion 20 form That is, the body 15 and the optical component 12 are bonded and fixed.

【0013】また、ホログラムパターン(図示せず)等
をその片面または両面に備える光学部品12と枠体15
とを、第1の接着剤21と第2の接着剤22とによっ
て、それぞれ別工程において三次元的に接合しているこ
とにある。
An optical component 12 having a hologram pattern (not shown) or the like on one or both sides thereof and a frame 15
Are three-dimensionally joined in different steps by the first adhesive 21 and the second adhesive 22.

【0014】つぎに、第1の実施例の半導体レーザ装置
11の製造方法の概略について説明する。
Next, an outline of a method for manufacturing the semiconductor laser device 11 of the first embodiment will be described.

【0015】上面に外部リード等が形成された保護板1
8と凹部20が形成された枠体15は樹脂パッケージ1
9として一体にモールド成形され、そのほぼ中央に一部
に受光素子14aが形成されかつヒートシンクの機能を
有するシリコン基板等の放熱板14を設置し、その上面
に半導体レーザチップ13をダイボンドする。つぎに半
導体レーザチップ13や信号光を受光する受光素子14
aと外部リード16との配線処理を行ったのち、枠体1
5の凹部20の部分にアクリル樹脂等よりなる紫外線硬
化型の第1の接着剤21を少量塗布し、光学部品12を
凹部20にはめ込み位置制御装置により半導体レーザチ
ップ13と光学部品12の位置合わせを行う。このと
き、光学部品12と枠体15との間には適当なクリアラ
ンスが生じるように凹部20を設けてあるため、正確な
位置合わせが可能となる。また、位置合わせ工程中に光
学部品12の下端周辺と凹部20は第1の接着剤によっ
て隙間なく埋められ、紫外線を照射することにより硬化
し、接着、固定される。ついで、光学部品12の側面か
ら枠体15の上面にかけて熱硬化性または常温硬化性の
エポキシ接着剤等よりなる第2の接着剤22を充填し、
硬化することによって、光学部品12と樹脂パッケージ
19は気密な中空部23をその内部に形成し、両者の接
着面が2種類の接着剤によって三次元的に接着されてい
るため、半導体レーザチップ13および受光素子14a
を湿度や水分等の外部環境から保護することができる。
Protective plate 1 having external leads formed on the upper surface
8 and the frame 15 in which the concave portion 20 is formed are the resin package 1
9, a heat sink 14 such as a silicon substrate having a light receiving element 14a formed at a substantially central part thereof and having a heat sink function is provided, and a semiconductor laser chip 13 is die-bonded to the upper surface thereof. Next, a semiconductor laser chip 13 and a light receiving element 14 for receiving signal light
a after the wiring process between the external lead 16 and the frame body 1
A small amount of an ultraviolet-curable first adhesive 21 made of acrylic resin or the like is applied to the concave portion 20 of 5, and the optical component 12 is inserted into the concave portion 20, and the position of the semiconductor laser chip 13 and the optical component 12 is adjusted by a position control device. I do. At this time, since the concave portion 20 is provided between the optical component 12 and the frame body 15 so as to generate an appropriate clearance, accurate positioning can be performed. Also, during the alignment process, the periphery of the lower end of the optical component 12 and the concave portion 20 are filled with the first adhesive without any gap, and are cured, adhered and fixed by irradiating ultraviolet rays. Next, a second adhesive 22 made of a thermosetting or room temperature curable epoxy adhesive or the like is filled from the side surface of the optical component 12 to the upper surface of the frame body 15,
By curing, the optical component 12 and the resin package 19 form an airtight hollow portion 23 therein, and the bonding surfaces of the two are three-dimensionally bonded by two kinds of adhesives. And light receiving element 14a
Can be protected from the external environment such as humidity and moisture.

【0016】つぎに本発明の第2の実施例について説明
する。図2は第2の実施例における半導体レーザ装置を
示すものであり、第1の実施例と相違する点は第1の実
施例における凹部20に代えて枠体15に堀状溝24を
設け、光学部品12の周囲に枠体15の堀状溝24に嵌
合するように凸部25を設けた点である。
Next, a second embodiment of the present invention will be described. FIG. 2 shows a semiconductor laser device according to the second embodiment. The difference from the first embodiment is that a moat-like groove 24 is provided in the frame 15 instead of the concave portion 20 in the first embodiment. The point is that a convex portion 25 is provided around the optical component 12 so as to fit into the moat-like groove 24 of the frame body 15.

【0017】第2の実施例の製造方法は第1の実施例の
場合とほぼ同様であるが、まず枠体15の堀状溝24に
第1の接着剤21を少量充填し、ついで光学部品12の
凸部25を堀状溝24に嵌合させ、その間に生じたクリ
アランスを利用して位置制御装置により半導体レーザチ
ップ13と光学部品12との位置合わせを行う。そのあ
と紫外線を照射して、第1の接着剤21を硬化させ、第
2の接着剤22を光学部品12の周囲側面と枠体15の
上面にかけて充填し、硬化させて、光学部品12と樹脂
パッケージ19との間に気密な中空部23を形成する。
The manufacturing method of the second embodiment is almost the same as that of the first embodiment. First, a small amount of the first adhesive 21 is filled in the moat-like groove 24 of the frame 15, and then the optical component is formed. Then, the semiconductor laser chip 13 and the optical component 12 are aligned by a position control device using the clearance generated between the protrusions 25 of the semiconductor device 12 and the groove 24. After that, the first adhesive 21 is cured by irradiating ultraviolet rays, and the second adhesive 22 is filled over the peripheral side surface of the optical component 12 and the upper surface of the frame 15, cured, and cured. An air-tight hollow portion 23 is formed between the package and the package 19.

【0018】第2の実施例の場合、第1の接着剤21が
形成する接着沿面距離が長く、かつ複雑な三次元構造を
形成しているため、その気密性がさらに高いものとな
り、半導体レーザチップ13を湿度や水分等の外部環境
から完全に保護することができる。
In the case of the second embodiment, since the bonding creepage distance formed by the first adhesive 21 is long and a complicated three-dimensional structure is formed, the airtightness is further improved, and the semiconductor laser The chip 13 can be completely protected from an external environment such as humidity and moisture.

【0019】なお、本発明において第1の接着剤にアク
リル樹脂等の紫外線硬化型接着剤を使用したのは、半導
体レーザチップ13に対する光学部品12の位置制御中
に加熱や接着剤の粘度上昇などが好ましくなく、位置合
わせ終了後は紫外線により迅速に硬化させるためであ
り、この目的が達成されるならばアクリル樹脂以外の接
着剤を用いることも可能である。したがって、第1の接
着剤21は光学部品12の位置合わせ後の固定が主たる
目的であるが、外部環境から半導体レーザチップ13を
保護する耐湿性と気密性を備えることも重要である。ま
た、エポキシ樹脂等よりなる第2の接着剤22について
は、樹脂パッケージ19と光学部品12とによる中空部
23の気密性を保持することがきわめて重要であり、樹
脂パッケージ19と光学部品12の構成材料に適した材
質の第2の接着剤22が選択されなければならない。
In the present invention, the reason why the ultraviolet curable adhesive such as acrylic resin is used as the first adhesive is that during the position control of the optical component 12 with respect to the semiconductor laser chip 13, heating or viscosity increase of the adhesive occurs. However, this is because curing is rapidly performed by ultraviolet light after the completion of the alignment. If this purpose is achieved, an adhesive other than an acrylic resin can be used. Therefore, the first purpose of the first adhesive 21 is to fix the optical component 12 after the alignment, but it is also important to provide the first adhesive 21 with moisture resistance and airtightness for protecting the semiconductor laser chip 13 from the external environment. It is very important for the second adhesive 22 made of epoxy resin or the like to maintain the airtightness of the hollow portion 23 formed by the resin package 19 and the optical component 12. A second adhesive 22 of a material suitable for the material must be selected.

【0020】つぎに、本発明の第1の実施例および第2
の実施例の半導体レーザ装置を温度60℃、相対湿度9
0%の環境下において保存した場合の、受光素子14a
の暗電流(リーク電流)の時間経過を測定した結果の一
例を、図3および図4にそれぞれ示す。図8に示す従来
の半導体レーザ装置の信頼性試験結果に比較し、いずれ
も受光素子14aのリーク電流の増大は見られず、長期
信頼性が大幅に向上していることがわかる。
Next, the first embodiment of the present invention and the second embodiment
The temperature of the semiconductor laser device of the embodiment is 60 ° C. and the relative humidity is 9
Light-receiving element 14a when stored under 0% environment
FIG. 3 and FIG. 4 show an example of the result of measuring the passage of time of the dark current (leakage current) of FIG. Compared with the reliability test results of the conventional semiconductor laser device shown in FIG. 8, no increase in the leakage current of the light receiving element 14a was observed in any case, indicating that the long-term reliability was greatly improved.

【0021】このように、上記実施例によれば、樹脂パ
ッケージ19を構成する枠体15に凹部20または堀状
溝24を設け、光学部品12を第1の接着剤21と第2
の接着剤22とによって接着しているために、中空部2
3の気密性が高くなり、半導体レーザチップ13および
受光素子14aの特性の信頼性を大幅に向上させること
ができる。
As described above, according to the above embodiment, the concave portion 20 or the moat-shaped groove 24 is provided in the frame 15 constituting the resin package 19, and the optical component 12 is attached to the first adhesive 21 and the second adhesive 21.
Of the hollow portion 2
3, the airtightness of the semiconductor laser chip 13 and the reliability of the characteristics of the semiconductor laser chip 13 and the light receiving element 14a can be greatly improved.

【0022】[0022]

【発明の効果】本発明は、主として半導体レーザチップ
と、半導体レーザチップを内部に収納する枠体と保護板
とよりなる樹脂パッケージと、その樹脂パッケージの上
面に接着剤を介して設けられた光学部品とからなる半導
体レーザ装置であって、枠体に凹部または堀状溝を設け
ることにより枠体と光学部品が三次元的な接合面を構成
するものであり、きわめて長期信頼性に優れた半導体レ
ーザ装置を提供することができる。
According to the present invention, there is provided a resin package mainly comprising a semiconductor laser chip, a frame for accommodating the semiconductor laser chip therein, and a protective plate, and an optical element provided on the upper surface of the resin package via an adhesive. A semiconductor laser device comprising components, wherein the frame and the optical component form a three-dimensional joint surface by providing a concave portion or a moat-shaped groove in the frame, and a semiconductor with excellent long-term reliability. A laser device can be provided.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の第1の実施例における半導体レーザ装
置の断面図
FIG. 1 is a sectional view of a semiconductor laser device according to a first embodiment of the present invention.

【図2】同第2の実施例における半導体レーザ装置の断
面図
FIG. 2 is a sectional view of the semiconductor laser device according to the second embodiment.

【図3】同第1の実施例の半導体レーザ装置の信頼性を
測定した特性図
FIG. 3 is a characteristic diagram obtained by measuring the reliability of the semiconductor laser device according to the first embodiment.

【図4】同第2の実施例の半導体レーザ装置の信頼性を
測定した特性図
FIG. 4 is a characteristic diagram obtained by measuring the reliability of the semiconductor laser device according to the second embodiment.

【図5】従来の光ピックアップ装置の概略構成図FIG. 5 is a schematic configuration diagram of a conventional optical pickup device.

【図6】改善された従来の光ピックアップ装置の概略構
成図
FIG. 6 is a schematic configuration diagram of an improved conventional optical pickup device.

【図7】従来の半導体レーザ装置の断面図FIG. 7 is a sectional view of a conventional semiconductor laser device.

【図8】従来の半導体レーザ装置の信頼性を測定した特
性図
FIG. 8 is a characteristic diagram obtained by measuring the reliability of a conventional semiconductor laser device.

【符号の説明】[Explanation of symbols]

12 光学部品 13 半導体レーザチップ 15 枠体 18 保護板 19 樹脂パッケージ 20 凹部 21 第1の接着剤 22 第2の接着剤 DESCRIPTION OF SYMBOLS 12 Optical component 13 Semiconductor laser chip 15 Frame 18 Protective plate 19 Resin package 20 Depression 21 First adhesive 22 Second adhesive

───────────────────────────────────────────────────── フロントページの続き (72)発明者 吉川 昭男 大阪府高槻市幸町1番1号 松下電子工 業株式会社内 (72)発明者 太田 一成 大阪府高槻市幸町1番1号 松下電子工 業株式会社内 (56)参考文献 特開 平3−48446(JP,A) 実開 昭63−153539(JP,U) 実開 昭62−37935(JP,U) 実開 昭61−199052(JP,U) 実開 昭63−185240(JP,U) (58)調査した分野(Int.Cl.7,DB名) H01L 23/02 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Akio Yoshikawa 1-1, Kochi-cho, Takatsuki-shi, Osaka Prefecture Inside Matsushita Electronics Corporation (72) Inventor Kazunari Ota 1-1, Kochi-cho, Takatsuki-shi, Osaka Matsushita (56) References JP-A-3-48446 (JP, A) JP-A-63-153539 (JP, U) JP-A-62-37935 (JP, U) JP-A-61-199052 (JP, U) Japanese Utility Model 63-185240 (JP, U) (58) Fields investigated (Int. Cl. 7 , DB name) H01L 23/02

Claims (3)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 主として半導体レーザチップと、同半導
体レーザチップを内部に収納する枠体と保護板とよりな
る樹脂パッケージと、同樹脂パッケージの上面に設けら
れた光学部品とからなる半導体レーザ装置であって、前
記枠体の上面内周部に前記光学部品の厚みより小さい段
差を有する切り欠き部を設け、少なくとも同切り欠き部
の側面と前記光学部品の側面の間は第1の接着剤で接合
され、前記光学部品の側面から前記枠体の上面にわたっ
ては第2の接着剤で接合されていることを特徴とする半
導体レーザ装置。
1. A semiconductor laser device mainly comprising a semiconductor laser chip, a resin package including a frame housing the semiconductor laser chip therein and a protective plate, and an optical component provided on an upper surface of the resin package. A notch having a step smaller than the thickness of the optical component is provided in an inner peripheral portion of the upper surface of the frame, and at least the notch is provided.
Between side face side and the optical components of joined at the first adhesive, it is over the upper surface of the frame from the side surface of the optical component semiconductor laser, characterized by being bonded with the second adhesive apparatus.
【請求項2】 主として半導体レーザチップと、同半導
体レーザチップを内部に収納する枠体と保護板とよりな
る樹脂パッケージと、同樹脂パッケージの上面に設けら
れた凸状脚部を有する光学部品とからなる半導体レーザ
装置であって、前記枠体の周囲上面部に堀状溝が設けら
れ、同堀状溝と前記光学部品の凸状脚部が嵌合され、前
記堀状溝と前記凸状脚部すべての間は第1の接着剤で
接合し、前記光学部品の側面から前記枠体の上面にわた
っては第2の接着剤で接合されていることを特徴とする
半導体レーザ装置。
2. A resin package mainly comprising a semiconductor laser chip, a frame housing the semiconductor laser chip therein and a protective plate, and an optical component having a convex leg provided on an upper surface of the resin package. A moat-shaped groove is provided on a peripheral upper surface of the frame, and the moat-shaped groove and the convex leg of the optical component are fitted to each other. A semiconductor laser device, wherein all of the legs are joined with a first adhesive, and the side surface of the optical component and the upper surface of the frame are joined with a second adhesive.
【請求項3】 枠体と保護板とよりなる樹脂パッケージ
内に半導体基板を設置し、前記半導体基板の上に半導体
レーザチップを設け、同半導体チップと外部リードとの
配線処理を行った後、前記枠体の上面部に設けられた切
り欠き部または凹部に第1の接着剤を充填し、前記切り
欠き部の厚さよりも大きい厚さの光学部品の一部を前記
切り欠き部に、または光学部品に形成された凸状脚部を
前記凹部に嵌合させて、前記切り欠き部または前記凹部
と前記光学部品との間に備えられたクリアランスにより
前記半導体チップに対する前記光学部品の位置調整を行
った後硬化接着し、つぎに第2の接着剤を前記光学部品
の側面から前記枠体の上面にわたって充填し、硬化接着
させる半導体レーザ装置の製造方法。
3. After a semiconductor substrate is set in a resin package including a frame and a protection plate, a semiconductor laser chip is provided on the semiconductor substrate, and wiring processing between the semiconductor chip and external leads is performed. A notch or a concave portion provided on the upper surface of the frame is filled with a first adhesive, and a part of the optical component having a thickness larger than the thickness of the notch is provided in the notch, or and a convex leg portion formed on the optical component is fitted in the recess, the notch or the recess
After adjusting the position of the optical component with respect to the semiconductor chip by the clearance provided between the optical component and the optical component, the optical component is cured and bonded, and then a second adhesive is applied from the side surface of the optical component to the upper surface of the frame. Manufacturing method of a semiconductor laser device which is filled and cured by bonding.
JP5329052A 1993-12-24 1993-12-24 Semiconductor laser device and method of manufacturing the same Expired - Fee Related JP3045913B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5329052A JP3045913B2 (en) 1993-12-24 1993-12-24 Semiconductor laser device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5329052A JP3045913B2 (en) 1993-12-24 1993-12-24 Semiconductor laser device and method of manufacturing the same

Publications (2)

Publication Number Publication Date
JPH07183414A JPH07183414A (en) 1995-07-21
JP3045913B2 true JP3045913B2 (en) 2000-05-29

Family

ID=18217081

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5329052A Expired - Fee Related JP3045913B2 (en) 1993-12-24 1993-12-24 Semiconductor laser device and method of manufacturing the same

Country Status (1)

Country Link
JP (1) JP3045913B2 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10319767B2 (en) 2016-05-19 2019-06-11 Canon Kabushiki Kaisha Electronic component including an optical member fixed with adhesive

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JP2003133626A (en) * 2001-10-19 2003-05-09 Matsushita Electric Ind Co Ltd Light-emitting device package and sealing method of light-emitting device
JP2010010360A (en) * 2008-06-26 2010-01-14 Kyocera Corp Electronic device, and method of manufacturing electronic device
EP3038173B1 (en) * 2014-12-23 2019-05-22 LG Innotek Co., Ltd. Light emitting device
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10319767B2 (en) 2016-05-19 2019-06-11 Canon Kabushiki Kaisha Electronic component including an optical member fixed with adhesive

Also Published As

Publication number Publication date
JPH07183414A (en) 1995-07-21

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