JP3037287B1 - Semiconductor manufacturing apparatus and semiconductor manufacturing method - Google Patents

Abstract

An object of the present invention is to provide a semiconductor manufacturing apparatus and a semiconductor manufacturing method for preventing a reaction product attached to an apparatus from falling onto a wafer and causing a defect on the wafer. Aim. SOLUTION: Reactive gas outlets 11 and 12 are provided at a central portion of a dispersion head H on which a wafer 17 is arranged to face and inject a reactive gas toward the wafer.
A shielding gas outlet 14 is provided surrounding the reactive gas outlet and injects a shielding gas, and an exhaust port 13 provided at a position surrounding the shielding gas outlet and discharging an unreacted gas and a reaction product is provided. And wherein the shielding gas outlet is provided to be inclined toward the exhaust port.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus and a semiconductor manufacturing method, and more particularly to a semiconductor manufacturing apparatus and a semiconductor manufacturing method for manufacturing a semiconductor using an atmospheric pressure chemical vapor deposition method. Things.

[0002]

2. Description of the Related Art Conventionally, as one of semiconductor manufacturing methods,
An atmospheric pressure chemical vapor deposition method (hereinafter, abbreviated as atmospheric pressure CVD) is known. As an example of an apparatus for manufacturing a semiconductor using the atmospheric pressure chemical vapor deposition method, for example, Japanese Patent Laid-Open Publication No. 1-1
No. 32,769 has been proposed.

[0003] In this technique, as shown in FIG. 2, silane (SiH4) and oxygen (O2) are used as reaction gases.
An inert gas (N2) is used as a shielding gas, and the reaction gas and the shielding gas are respectively directed toward the center of the semiconductor device 1a placed on the transport belt 1 toward the reaction gas outlet 5b and the inert gas injection. It is structured to blow out from the outlet 5c.

In Japanese Patent Application Laid-Open No. 3-287770, as shown in FIG. 3, a flow straightening plate 30 is provided at an outlet of a reaction gas, and a reaction gas (SiH4
O2) blows obliquely onto the wafer 18 and flows to the exhaust port.

[0005]

However, in the former conventional structure, the blown shielding gas is bent at an acute angle when flowing toward the exhaust port 7, so that a turbulent flow or a vortex is generated near the shielding gas outlet 5c. Then, the reaction gas flows around the lower surface of the dispersion head 5, and the reaction products adhere to the lower surface. As a result, there is a problem that the attached product falls onto the semiconductor device 1a passing immediately below, causing a defect in the semiconductor device 2 and lowering the production yield. Further, in the latter conventional structure, a structure for flowing a shielding gas is not provided.
There is a problem that the product adheres by reacting on the lower surface, and as a result, the production yield of the wafer 18 is reduced due to the fall of the attached product as in the former case.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned conventional problems, and a semiconductor for preventing a reaction product attached to an apparatus from falling onto a wafer and causing a defect on the wafer. It is an object of the present invention to provide a manufacturing apparatus and a method for manufacturing a semiconductor.

[0007]

According to a first aspect of the present invention, there is provided a semiconductor manufacturing apparatus for achieving the above object.
A reactive gas outlet provided at a central portion of a dispersion head in which a wafer is disposed to face, and a reactive gas outlet for injecting a reactive gas toward the wafer; and a shielding gas provided surrounding the reactive gas outlet for injecting a shielding gas. An outlet and an exhaust port provided at a position surrounding the shielding gas outlet and discharging an unreacted gas or a reaction product are provided, and the shielding gas outlet is provided to be inclined toward the exhaust port. The dispersion
To form a laminar shielding gas flow on the surface of the head.
It is characterized by having been done in . In the semiconductor manufacturing apparatus according to a second aspect of the present invention, the inclination of the shielding gas outlet according to the first aspect is set in a range of 20 degrees to 70 degrees with respect to a gas flow path toward the exhaust port. It is characterized by having. Claim 3 of the present invention
In the semiconductor manufacturing apparatus described in (1), the diameter of the shielding gas outlet according to claim 1 or 2 is set to 50 μm to 500 μm. A semiconductor manufacturing apparatus according to a fourth aspect of the present invention is characterized in that a large number of the shielding gas outlets according to any one of the first to third aspects are provided. According to a fifth aspect of the present invention, in the semiconductor manufacturing apparatus, the wafer is placed at a position facing the dispersion head according to any one of the first to fourth aspects.
It is characterized in that a conveying means for conveying the reaction gas outlet and the shielding gas outlet at a predetermined interval is provided. Further, in the method of manufacturing a semiconductor according to the sixth aspect of the present invention, after the inside of the chamber into which the wafer is loaded is heated to a predetermined temperature, from the center of the dispersion head installed in the chamber to the outside. A shielding gas flow in a laminar flow state is formed on the surface of the dispersion head by obliquely blowing the shielding gas toward the surface, and then, after blowing out the reaction gas from the center of the dispersion head, The method is characterized in that a wafer is carried in toward a blowing portion and a predetermined film is formed on the surface of the wafer.

[0008]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described below with reference to FIG. In FIG.
Denotes a dispersion head in which a wafer 17 is arranged to face, and the outlets 11 and 12 of the reaction gas are formed at the center thereof, and the exhaust port 13 is formed at the outermost part. A shielding gas outlet 14 for blowing nitrogen gas as a shielding gas is formed between 11 and 12 and the exhaust port 13. The shielding gas outlet 14 is connected to the reactive gas outlets 11 and 1.
Nitrogen gas is formed so as to blow out at a shallow angle with respect to the flow path of the reaction gas up to 2 and the exhaust port 13.

In a normal pressure CVD apparatus, a heater 15 is used.
The wafer 17 is placed on a belt 16 as a wafer transfer means, which is heated at about 400 ° C.
By moving the wafer 17, the wafer 17 is moved below the reaction gas outlets 11 and 12 (from left to right in FIG. 1), and a film is deposited on the wafer 17. As a reaction gas, for example, silane (SiH4) and oxygen (O2) are used during the growth of an oxide film, and these are blown onto the wafer 17 to deposit an oxide film on the wafer 17. Then, unreacted gas and reaction products are discharged from the exhaust port 13.

In the flow path of the reactant gas from the reactant gas outlets 11 and 12 to the exhaust port 13, nitrogen gas is supplied through the outlet of the reactant gas so that the product of the reactant gas does not adhere to the surface of the dispersion head H. It flows from 14 and shields the reaction gas and the surface of the dispersion head H. That is, the diameter of the shielding gas outlet 14 is 50
A large number of holes are formed from μm to 500 μm, and the angle of the outlet 14 is inclined by 20 to 70 degrees with respect to the direction from the reaction gas outlets 11 and 12 to the outlet 13.

Next, using the apparatus of the present invention, the wafer 17
A case where a film is formed thereon will be described with reference to FIG. First, with the heater 15 being heated and maintained at about 400 ° C., nitrogen gas is blown out of the shielding gas blowout port 14 into the chamber and exhausted from the exhaust port 13. When a film is formed on the wafer 17 from this state, the reaction gas is blown out to the blowout ports 11 and 12 and the exhaust gas
When the gas is exhausted from the chamber 3 and the gas flow in the chamber has settled down to a steady state, the wafer 17 is placed on the belt 16 and moved at a constant speed just below the reaction gas outlets 11 and 12.

Here, if the nitrogen gas blowing angle stands at more than 70 degrees with respect to the direction of the reaction gas flowing in front of the dispersion head H, a turbulent or eddy current flows near the nitrogen gas blowing port. Occurs, but the angle is 7
If the temperature is set to 0 degrees or less, nitrogen gas is blown out in the direction along the flow of the reaction gas, so that turbulence and eddy flow do not occur at the outlet of the hole, and the nitrogen gas flows laminarly on the surface of the dispersion head H. Flows as Therefore, the reaction gas is completely separated from the surface of the dispersion head H by the nitrogen gas, so that no reaction gas is deposited on the surface of the dispersion head H. Therefore, the wafer 1 moving immediately below
Since the sediment does not fall on the surface 7, the product yield is improved.

[0013]

According to the present invention, the generation of turbulence and eddy at the outlet of the hole is prevented by causing the shielding gas to flow along the flow direction of the reaction gas flowing in front of the dispersion head. In addition, the shielding gas can be caused to flow in a laminar flow state on the surface of the dispersion head. As a result, the reaction gas is completely separated from the surface of the dispersion head by the shielding gas to prevent the deposition of the reaction product on the surface of the dispersion head, and to prevent the deposition of the deposit on the wafer moving directly below. Can be prevented, and the yield of products can be improved.

[Brief description of the drawings]

FIG. 1 is a schematic configuration diagram showing an embodiment of the present invention.

FIG. 2 is a schematic configuration diagram of a conventional example.

FIG. 3 is a schematic configuration diagram of another conventional example.

[Explanation of symbols]

 REFERENCE SIGNS LIST 1 Conveyor belt 1 a Semiconductor device 5 Dispersion head 5 b Reactive gas outlet 5 c Inert gas (shielding gas) outlet 7 Exhaust port 11 Reactive gas outlet 12 Reactive gas outlet 13 Exhaust port 14 Shielding gas outlet 15 Heater 16 Belt (Transportation means) 17 wafer 18 wafer 30 straightening plate 40 through hole H dispersion head

──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. ⁷ , DB name) H01L 21/205 H01L 21/365 H01L 21/31 C23C 16/00-16/56

Claims (6)

(57) [Claims] 1. A reactive gas outlet provided at a central portion of a dispersion head in which a wafer is disposed to face and injecting a reactive gas toward the wafer; and a shielding gas provided around the reactive gas outlet. A shielding gas outlet for injecting, and an exhaust port provided at a position surrounding the shielding gas outlet and discharging an unreacted gas or a reaction product, wherein the shielding gas outlet is directed toward the exhaust port. by being provided inclined, the de
Laminar shielding gas flow on the surface of the dispersion head
A semiconductor manufacturing apparatus characterized by being formed . 2. The semiconductor manufacturing method according to claim 1, wherein an inclination of the shielding gas outlet is set in a range of 20 degrees to 70 degrees with respect to a gas flow path toward the exhaust port. apparatus. 3. The shielding gas outlet has a diameter of 50 μm.
The semiconductor manufacturing apparatus according to claim 1, wherein the diameter is set to m to 500 μm. 4. The semiconductor manufacturing apparatus according to claim 1, wherein a large number of said shielding gas outlets are provided. 5. A transfer means for transferring the wafer at a position facing the dispersion head at a predetermined distance from the reactive gas outlet and the shielding gas outlet. The semiconductor manufacturing apparatus according to any one of claims 1 to 4, wherein: 6. After the inside of a chamber into which a wafer is loaded is heated to a predetermined temperature, a shielding gas is blown obliquely outward from around a central portion of a dispersion head installed in the chamber. A shielding gas flow in a laminar flow state is formed on the surface of the dispersion head, and then a reaction gas is blown out from the center of the dispersion head, and then a wafer is loaded toward the blowout portion of the reaction gas. A method for manufacturing a semiconductor, comprising forming a predetermined film on a surface of a wafer.