【発明の属する技術分野】
本発明は、半導体ウエハ、液晶表示装置（ＬＣＤ）用基板等の基板を温度調整するための温度調整装置に関する。
【従来の技術】
従来から、半導体ウエハ、ＬＣＤ用ガラス基板等の基板に加熱処理を施すために種々の加熱装置が使用されている。例えば、半導体製造工程のホトレジスト処理工程においては、半導体ウエハ表面の水分を脱水するため、あるいはウェハ表面に塗布されたレジスト中の溶媒を除去するため等に加熱処理が行われる。加熱方法としては、直接ホットプレート方式、バッチ式熱風加熱方式、マイクロ波方式等があるが、コンパクト化、効率化、サイクルタイム短縮および再現性、均一性の向上の要求のもとに直接ホットプレート方式が主流となっている。しかし、直接ホットプレート方式では半導体ウエハをホットプレートに密着させて、直接加熱するため、ホットプレートと半導体ウエハとの密着状態によって熱の均一性に大きく影響する他、一般にホットプレートがアルミニウム等の金属から成るため、重金属汚染、半導体ウエハの裏面へのパーティクルの付着等の問題がある。このような問題を除去するためホットプレートと半導体ウエハとの間に僅かな聞隙を設け、直接半導体ウエハをホットプレートに密着させずに加熱処理を行うプロキシミティ方式がある。このようなプロキシミティ方式の加熱装置は、図７、図８に示すように、内部にヒータが内蔵されたホットプレート７０１を備え、ホットプレート７０１の中央部付近には３個の直方形状の凹部７０５が設けられており、各凹部７０５内に基板支持用のセラミック製の球７０２が、ホットプレート７０１上面から僅かに突出するように配設されている。また、ホットプレート７０１の中央部付近には、半導体ウエハ７０４をホットプレート７０１に載置あるいはホットプレート７０１から搬出するために、基板支持ピン（図示せず）が出入りするための支持ピン用孔７０３が設けられている。以上のように構成された加熱装置においては、先ず、基板支持ピンを支持ピン用孔７０３を介してホットプレート７０１上部へ突出させた後、基板支持ピンに半導体ウエハ７０４を載置する。次に、基板支持ピンをホットプレート７０１下部へ収容することにより半導体ウエハ７０４を球７０２上に載置し、加熱処理を行なう。このとき、球７０２は、ホットプレート７０１の上面から僅かに突出しているため、即ち、半導体ウエハ７０４とホットプレート７０１との間には微小な間隙が存在するため、半導体基板７０４にはパーティクル汚染等が生じず又、効率良く加熱することが可能となる。
【発明が解決しようとする課題】
ところで、球７０２は、凹部７０５内に固定することなく配設されているため、ホットプレート７０１の清掃時や半導体ウエハ７０４の取外し時等に球７０２が凹部７０５から抜出たり、浮き上がったりすることがあり、この状態で半導体ウエハ７０４を載置するとホットプレート７０１の上面に対して傾斜してしまうため加熱が不均一になるという問題があった。また、前述した基板加熱装置においては、球７０２がホットプレート７０１の中央部付近に配設されている。半導体ウエハ７０４は球７０２を介してホットプレート７０１に接することになるため、その中央部付近はその他の部分よりも高温に加熱されてしまう。そのため、半導体ウエハ７０４の面内の温度分布が不均一になるという問題があった。特に、レジストパターンを硬化させるポストベーキングの場合、レジストパターンに対応する部分の温度が高くなりすぎるとレジストパターンの厚みや形状が部分的に変化してしまうという問題があった。本発明は半導体ウエハ、ＬＣＤ等の加熱処理が必要な基板においては、基板を均一に温度調整することが可能な温度調整装置を提供する。更に、本発明は、半導体ウエハ７０４に形成される集積回路（ＩＣ）は、通常、半導体ウエハ７０４の周縁を除いた部分の全面に形成され、レジストパターン等の本来的に均一に加熱すべき主要部分がその周縁を除く部分に配設されていることに着目してなされたものであり、実質的に基板を均一に温度調整することが可能な温度調整装置を提供することを目的としている。
【課題を解決するための手段】
上記目的を達成するため、本発明の温度調整装置は、所定温度に設定可能な温調体と、温調体に設けられる収納部に収納され、被温調体を支持して被温調体を温調体と非接触に保持する複数の支持部材とを備えた温度調整装置において、支持部材は温調体に埋設される円盤状の埋設部と、円盤状の埋設部の中心に設けられ埋設部の外径より小さい外径を有する突出部とを備え、突出部の外径より大きく埋設部の外径より小さい径の孔を有し当該孔から突出部の先端を温調体表面上に突出させ支持部材を温調体に固定する固定部材を設けたものである。温調体に埋設される円盤状の埋設部と、その中心に設けられる突出部を有する支持部材は、円盤状の埋設部の外径より小さく突出部の外径より大きい径の孔を有する固定部材により、突出部の先端を固定部材の孔から突出させ温調体に固定されるため、温調体から抜出たり、浮き上がったりしない。このため、支持部材に支持される被温調体が傾斜することがなく、被温調体を均一に温度調整することができる。また、固定部材の開口は埋設部の外径より小さい径であるため、凹部のゴミの蓄積を防止することができ、被温調体の汚染を排除することができる。また、複数の支持部材を用いて被温調体をその周縁部で支持することにより、被温調体を実質的に均一に温度調整することができる。
【発明の実施の形態】
以下、本発明の温度調整装置を、半導体ウエハのアドヒージョン処理、プリベーキング処理、ポストベーキング処理等の加熱処理に利用される基板加熱装置に適用した一実施例について、図面を参照して説明する。基板加熱装置は、図１、図２に示すように、円形の温調体１０１を有し、温調体１０１は、内部に電熱ヒータ等の加熱温度の調整が可能な加熱部材（図示せず）を内蔵している。尚、温調体１０１の加熱温度および加熱時間は、処理の目的に応じて種々に設定できる。例えば、アドヒージョン処理の場合には、約８０乃至１００℃で約３０秒間の加熱を行なう。プリベーキングの場合には、約１２０乃至１５０℃で１分間の加熱を行なう。ポストベーキングの場合には、約１２０乃至１５０℃で約１分間の加熱を行なう。冷却を行なうクーリングの場合には室温（例えば２３℃）に制御される。温調体１０１には、被温調体である半導体ウエハ１０４を温調体１０１に載置あるいは温調体１０１から搬出するときに使用するために、基板支持ピン（図示せず）が出入りするための支持ピン用孔１０３が設けられている。支持ピンは後述する支持部材１０２より内側の位置に配設され、半導体ウェハ１０４の搬入出時に温調体１０１と相対的に上下動して半導体ウェハ１０４を支持する。このような温調体１０１の周縁部には、半導体ウエハ１０４を支持するための３個の支持部材１０２が設けられている。支持部材１０２は、半導体ウエハ１０４の裏面の汚染を防止するため、セラミック製等が好ましい。支持部材１０２は、図３、図４に示すように、円盤状の埋設部１０２ａと、円盤状の埋設部１０２ａの中心に突出して設けられる突出部１０２ｂとを有する。一方、温調体１０１には収納部である凹部４０３が、温調体１０１上に載置される半導体ウエハ１０４の周縁部に対向する位置に形成される。支持部材１０２の円盤状の埋設部１０２ａは凹部４０３内に収納され、凹部４０３の側壁に設けられたネジ部４０４と螺合する固定部材であるナット４０２により固定される。ナット４０２は円盤状の埋設部１０２ａの外径より小さく突出部１０２ｂの外径より大きい孔４０２ｂを有し、孔４０２ｂに突出部１０２ｂが挿入されその先端は温調体１０１の上面から０．１乃至０．３ｍｍ程度突出した位置にある。このため、突出部１０２ｂ上に載置される半導体ウエハ１０４と、温調体１０１間には、突出部１０２ｂの先端の突出分の間隙が保持される。尚、前述の固定は、ナット４０２をネジ込む代りに、材質ＰＴＦＥ等の樹脂性のリング状部材（固定部材）を凹部に圧入取着して、支持部材１０２を固定するようにしてもよい。更に、図５に示すように、温調体１０１に設けられる凹部４０３ａは、支持部材１０２の埋設部１０２ａを遊嵌するように形成する。凹部４０３の大きさは、温調体１０１の形成材料と、支持部材１０２の形成材料の膨張係数の相違により、加熱時に膨張する体積の差を吸収できる大きさとすればよい。支持部材１０２の埋設部１０２ａを収納した後、前述したように凹部４０３の側壁に設けられたネジ部４０４とナット４０２により、支持部材１０２を固定することができる。このとき、ナットに形成される支持部材１０２の突出部１０２ｂを貫通させる孔４０２ｂは、突出部１０２ｂの外径より大きく設け、突出部１０２ｂを遊嵌させるようにしてもよい。また、支持部材１０２を固定する固定部材としては、凹部４０３ａの部分のみでなく、温調体１０１の全面を覆うような円盤状の蓋体４０２ａとし、それぞれの突出部１０２ｂに対応する位置にその先端を遊嵌して突出させる孔４０２ｂを穿設し、蓋体を温調体１０１に固定するようにしてもよい。支持部材１０２を遊嵌させることにより、膨張率の相違から温調体１０１と支持部材１０２の増加する体積が加熱時に異なることによる支持部材１０２の損傷を防止することができる。以上のように構成された基板加熱装置の動作を以下に説明する。処理前の半導体ウエハを送り出すセンダあるいは半導体ウエハにフォトレジストを塗付するコータ等の処理装置から搬送された半導体ウエハ１０４は、搬送機構（図示せず）により先ず、支持ピン用孔１０３を介して温調体１０１上部へ突出した３本の基板支持ピン上に載置される。次に、各基板支持ピンは温調体１０１下部へ収容され、これにより半導体ウエハ１０４が支持部材１０２の突出部１０２ｂ上に載置される。この状態で、温調体に内蔵された電熱ヒータにより半導体ウエハ１０４を加熱処理する。尚、加熱温度及び加熱時間は前述したように処理の種類によって種々に設定される。突出部１０２ｂの先端は、温調体１０１の上面から約０．１乃至０．３ｍｍ程度突出しているため、即ち、半導体ウエハ１０４と温調体１０１との間には約０．１乃至０．３ｍｍ程度の間隙が存在するため、半導体基板１０４にはパーティクル汚染等が生じず又、効率よく加熱することが可能となる。このとき、各支持部材１０２は温調体１０１の周縁部近傍に配設されているため、半導体ウエハ１０４は、その端部近傍が各支持部材１０２により支持されることになる。したがって、半導体ウエハ１０４の端部近傍における支持部材１０２周辺部分は、それ以外の部分に比べて高温に加熱されるが、ＩＣは半導体ウエハ１０４の端部より内側に設けられているため、ＩＣが設けられている部分は加熱台からの放射熱等により均一に加熱されることになり、半導体ウエハ１０４を実質的に均一に加熱することが可能となる。前述のようにして加熱処理された半導体ウエハ１０４は、支持ピン用孔１０３から基板支持ピンを温調体１０１上部へ突出させることにより、温調体１０１から外され、次の工程へ搬送される。更に、本発明の他の実施例として、図６に示すように、温調体１０１の中央部に支持部材１０２を設けたものであってもよい。尚、支持部材１０２の先端部すなわち半導体ウエハ１０４との当接部は、出来る限り細くするのがパーティクル付着、加熱の均一性の点で好ましい。半導体ウエハ１０４の直径が例えば８インチ程度の大形のものになると、その端部近傍のみを支持部材１０２により支持した場合、半導体ウエハ１０４が撓み、その中央部が温調体１０１に接し、パーティクル等により汚染されるおそれがある。しかしながら、中央部に設けた支持部材１０２により半導体ウエハを支持することにより、半導体ウエハ１０４の撓みを防止することが可能となり、半導体ウエハ１０４全体がより均一に加熱されることになる。尚、前述した実施例は、半導体ウエハ用の基板加熱装置の場合であるが、ＬＣＤ基板等の加熱処理が必要な種々の基板の場合にも利用できる。また、円形の基板の例で説明したが、三角、四角等の多角形の基板の場合にも利用できる。
【発明の効果】
上記の説明からも明らかなように、本発明によれば、支持部材を温調体に固定することにより、支持部材が抜出たり、浮き上がったりすることがなく、基板が傾斜することを防止することができるので、被温調体を均一に加熱することができ、また、被温調体の周縁部を支持するため、被温調体を実質的に均一に加熱することが可能となる。また、支持部材を収納するための凹部は開口して設けていないため、ゴミ等が貯まるという問題は生じない。更に、支持部材を温調体に遊嵌して設けたため、膨張率の相違から加熱時に支持部材が受ける損傷を防止することができる。
【図面の簡単な説明】
【図１】本発明の一実施例を示す平面図。
【図２】図１に示す一実施例のＡ−Ａ断面図。
【図３】本発明の一実施例の要部を示す平面図。
【図４】本発明の他の実施例の要部を示す断面図。
【図５】本発明の他の実施例を示す断面図。
【図６】本発明の他の実施例を示す平面図。
【図７】従来例を示す平面図。
【図８】従来例を示す断面図。
【符号の説明】
１０１・・・温調体
１０４・・・半導体ウエハ（被温調体）
１０２・・・支持部材
１０２ａ・・・埋設部
１０２ｂ・・・突出部
４０２・・・固定部材
４０２ｂ・・・孔
４０３、４０３ａ・・・収納部BACKGROUND OF THE INVENTION
The present invention relates to a temperature adjusting device for adjusting the temperature of a substrate such as a semiconductor wafer or a substrate for a liquid crystal display (LCD).
[Prior art]
Conventionally, various heating devices have been used to perform heat treatment on substrates such as semiconductor wafers and glass substrates for LCD. For example, in the photoresist processing step of the semiconductor manufacturing process, heat treatment is performed to dehydrate moisture on the surface of the semiconductor wafer or to remove a solvent in the resist applied to the wafer surface. There are direct hot plate method, batch type hot air heating method, microwave method, etc. as the heating method, but direct hot plate with the demand for compactness, efficiency, cycle time shortening and reproducibility, and uniformity improvement. The method has become mainstream. However, in the direct hot plate method, since the semiconductor wafer is brought into close contact with the hot plate and directly heated, the heat uniformity is greatly affected by the contact state between the hot plate and the semiconductor wafer, and the hot plate is generally made of a metal such as aluminum. Therefore, there are problems such as heavy metal contamination and adhesion of particles to the back surface of the semiconductor wafer. In order to eliminate such a problem, there is a proximity method in which a slight gap is provided between the hot plate and the semiconductor wafer, and the heat treatment is performed without directly attaching the semiconductor wafer to the hot plate. As shown in FIGS. 7 and 8, such a proximity heating apparatus includes a hot plate 701 in which a heater is incorporated, and has three rectangular recesses near the center of the hot plate 701. 705 is provided, and a ceramic ball 702 for supporting a substrate is disposed in each recess 705 so as to slightly protrude from the upper surface of the hot plate 701. Further, in the vicinity of the center portion of the hot plate 701, a support pin hole 703 for a substrate support pin (not shown) to enter and exit in order to place the semiconductor wafer 704 on the hot plate 701 or carry it out of the hot plate 701. Is provided. In the heating apparatus configured as described above, first, the substrate support pins are protruded to the upper portion of the hot plate 701 through the support pin holes 703, and then the semiconductor wafer 704 is placed on the substrate support pins. Next, the semiconductor wafer 704 is placed on the ball 702 by accommodating the substrate support pins below the hot plate 701, and heat treatment is performed. At this time, since the sphere 702 slightly protrudes from the upper surface of the hot plate 701, that is, there is a minute gap between the semiconductor wafer 704 and the hot plate 701, particle contamination or the like is present on the semiconductor substrate 704. Does not occur and heating can be performed efficiently.
[Problems to be solved by the invention]
By the way, since the sphere 702 is disposed without being fixed in the recess 705, the sphere 702 may be pulled out of the recess 705 or lifted when the hot plate 701 is cleaned or the semiconductor wafer 704 is removed. When the semiconductor wafer 704 is placed in this state, the semiconductor wafer 704 is inclined with respect to the upper surface of the hot plate 701, so that there is a problem that heating is not uniform. In the substrate heating apparatus described above, the sphere 702 is disposed near the center of the hot plate 701. Since the semiconductor wafer 704 comes into contact with the hot plate 701 through the sphere 702, the vicinity of the central portion is heated to a higher temperature than the other portions. Therefore, there is a problem that the temperature distribution in the surface of the semiconductor wafer 704 becomes non-uniform. In particular, in the case of post-baking for curing the resist pattern, there is a problem that the thickness and shape of the resist pattern partially change if the temperature of the portion corresponding to the resist pattern becomes too high. The present invention provides a temperature adjustment device capable of uniformly adjusting the temperature of a substrate such as a semiconductor wafer or LCD that requires heat treatment. Further, according to the present invention, the integrated circuit (IC) formed on the semiconductor wafer 704 is usually formed on the entire surface of the semiconductor wafer 704 except for the peripheral edge, and the resist pattern or the like should be heated essentially uniformly. The present invention has been made paying attention to the fact that the portion is disposed in the portion excluding the peripheral edge, and an object of the present invention is to provide a temperature adjusting device capable of adjusting the temperature of the substrate substantially uniformly.
[Means for Solving the Problems]
In order to achieve the above object, a temperature adjusting device of the present invention is stored in a temperature adjusting body that can be set to a predetermined temperature, and a storage portion provided in the temperature adjusting body, and supports the temperature adjusting body. In the temperature control apparatus including a plurality of support members that hold the temperature control body in a non-contact manner, the support member is provided at the center of the disk-shaped embedded portion embedded in the temperature control body and the disk-shaped embedded portion. A protrusion having an outer diameter smaller than the outer diameter of the embedded portion, and having a hole having a diameter larger than the outer diameter of the protruding portion and smaller than the outer diameter of the embedded portion, the tip of the protruding portion from the hole on the surface of the temperature control body And a fixing member for fixing the support member to the temperature control body. The support member having a disk-like embedded portion embedded in the temperature control body and a protrusion provided at the center thereof is fixed with a hole having a diameter smaller than the outer diameter of the disk-shaped embedded portion and larger than the outer diameter of the protrusion. Since the tip of the protruding portion protrudes from the hole of the fixing member and is fixed to the temperature adjustment body by the member, it is not pulled out from the temperature adjustment body and does not float up. For this reason, the temperature adjustment body supported by the support member does not incline, and the temperature adjustment body can be adjusted in temperature uniformly. Further, since the opening of the fixing member has a diameter smaller than the outer diameter of the embedded portion, accumulation of dust in the recessed portion can be prevented, and contamination of the temperature-adjusted body can be eliminated. In addition, by supporting the temperature-controlled body at its peripheral edge using a plurality of support members, the temperature of the temperature-controlled body can be adjusted substantially uniformly.
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, an embodiment in which the temperature adjusting apparatus of the present invention is applied to a substrate heating apparatus used for a heat treatment such as an adhesion process, a pre-bake process, and a post-bake process of a semiconductor wafer will be described with reference to the drawings. As shown in FIGS. 1 and 2, the substrate heating apparatus has a circular temperature adjusting body 101, and the temperature adjusting body 101 has a heating member (not shown) capable of adjusting a heating temperature such as an electric heater inside. ) Is built-in. In addition, the heating temperature and heating time of the temperature control body 101 can be variously set according to the purpose of processing. For example, in the case of an adhesion process, heating is performed at about 80 to 100 ° C. for about 30 seconds. In the case of pre-baking, heating is performed at about 120 to 150 ° C. for 1 minute. In the case of post-baking, heating is performed at about 120 to 150 ° C. for about 1 minute. In the case of cooling for cooling, the temperature is controlled to room temperature (for example, 23 ° C.). Substrate support pins (not shown) are moved in and out of the temperature adjusting body 101 in order to use the semiconductor wafer 104 to be heated to be placed on the temperature adjusting body 101 or carried out of the temperature adjusting body 101. A support pin hole 103 is provided. The support pins are disposed at a position inside a support member 102 described later, and support the semiconductor wafer 104 by moving up and down relative to the temperature adjusting body 101 when the semiconductor wafer 104 is loaded and unloaded. Three support members 102 for supporting the semiconductor wafer 104 are provided on the peripheral edge of the temperature adjusting body 101. The support member 102 is preferably made of ceramic or the like in order to prevent contamination of the back surface of the semiconductor wafer 104. As shown in FIGS. 3 and 4, the support member 102 includes a disk-shaped embedded portion 102 a and a protruding portion 102 b that protrudes from the center of the disk-shaped embedded portion 102 a. On the other hand, the temperature adjusting body 101 is formed with a recess 403 as a storage portion at a position facing the peripheral edge of the semiconductor wafer 104 placed on the temperature adjusting body 101. The disk-shaped embedded portion 102 a of the support member 102 is housed in the recess 403 and is fixed by a nut 402 that is a fixing member that is screwed with a screw portion 404 provided on the side wall of the recess 403. The nut 402 has a hole 402b that is smaller than the outer diameter of the disk-like embedded portion 102a and larger than the outer diameter of the protruding portion 102b. The protruding portion 102b is inserted into the hole 402b, and the tip thereof is 0.1 It is in a position protruding about 0.3 mm. Therefore, a gap corresponding to the protrusion at the tip of the protrusion 102 b is maintained between the semiconductor wafer 104 placed on the protrusion 102 b and the temperature adjustment body 101. Note that the above-described fixing may be performed by press-fitting and attaching a resinous ring-shaped member (fixing member) such as a material PTFE into the recess instead of screwing the nut 402 into place. Furthermore, as shown in FIG. 5, the recessed part 403a provided in the temperature control body 101 is formed so that the embedding part 102a of the support member 102 may be loosely fitted. The size of the recess 403 may be a size that can absorb the difference in volume that expands during heating due to the difference in expansion coefficient between the material for forming the temperature adjusting body 101 and the material for forming the support member 102. After housing the embedded portion 102a of the support member 102, the support member 102 can be fixed by the screw portion 404 and the nut 402 provided on the side wall of the recess 403 as described above. At this time, the hole 402b that penetrates the protruding portion 102b of the support member 102 formed in the nut may be provided larger than the outer diameter of the protruding portion 102b, and the protruding portion 102b may be loosely fitted. Further, as a fixing member for fixing the support member 102, a disc-like lid body 402a that covers not only the concave portion 403a but also the entire surface of the temperature adjusting body 101 is provided at a position corresponding to each protruding portion 102b. A hole 402b that allows the tip to loosely fit and protrude may be provided to fix the lid to the temperature control body 101. By loosely fitting the support member 102, it is possible to prevent damage to the support member 102 due to the difference in expansion rate between the temperature adjusting body 101 and the support member 102 during heating. The operation of the substrate heating apparatus configured as described above will be described below. A semiconductor wafer 104 transferred from a processing unit such as a sender for sending a semiconductor wafer before processing or a coater for applying a photoresist to the semiconductor wafer is first passed through a support pin hole 103 by a transfer mechanism (not shown). It is placed on three substrate support pins that protrude to the top of the temperature adjustment body 101. Next, each substrate support pin is accommodated in the lower part of the temperature adjustment body 101, whereby the semiconductor wafer 104 is placed on the protruding portion 102 b of the support member 102. In this state, the semiconductor wafer 104 is heated by an electric heater built in the temperature regulator. The heating temperature and the heating time are variously set depending on the type of treatment as described above. The tip of the protrusion 102b protrudes from the upper surface of the temperature adjustment body 101 by about 0.1 to 0.3 mm, that is, between the semiconductor wafer 104 and the temperature adjustment body 101, about 0.1 to 0.00 mm. Since there is a gap of about 3 mm, particle contamination or the like does not occur in the semiconductor substrate 104 and heating can be performed efficiently. At this time, since each support member 102 is disposed in the vicinity of the peripheral edge portion of the temperature adjusting body 101, the end portion of the semiconductor wafer 104 is supported by each support member 102. Therefore, the peripheral portion of the support member 102 in the vicinity of the end portion of the semiconductor wafer 104 is heated to a higher temperature than the other portions. However, since the IC is provided on the inner side of the end portion of the semiconductor wafer 104, the IC is The provided portion is uniformly heated by radiant heat from the heating table, and the semiconductor wafer 104 can be heated substantially uniformly. The semiconductor wafer 104 heat-treated as described above is removed from the temperature adjustment body 101 by projecting the substrate support pins from the support pin holes 103 to the upper part of the temperature adjustment body 101, and is transferred to the next step. . Furthermore, as another embodiment of the present invention, as shown in FIG. 6, a support member 102 may be provided at the center of the temperature adjusting body 101. Note that the tip of the support member 102, that is, the contact portion with the semiconductor wafer 104, is preferably as thin as possible in terms of particle adhesion and heating uniformity. When the diameter of the semiconductor wafer 104 becomes large, for example, about 8 inches, when only the vicinity of the end portion is supported by the support member 102, the semiconductor wafer 104 bends and its central portion comes into contact with the temperature adjusting body 101, and the particles There is a risk of contamination. However, by supporting the semiconductor wafer by the support member 102 provided at the center, it becomes possible to prevent the semiconductor wafer 104 from being bent, and the entire semiconductor wafer 104 is heated more uniformly. The above-described embodiment is a case of a substrate heating apparatus for a semiconductor wafer, but it can also be used for various substrates such as an LCD substrate that require heat treatment. Further, the example of the circular substrate has been described, but the present invention can also be used in the case of a polygonal substrate such as a triangle or a square.
【The invention's effect】
As is clear from the above description, according to the present invention, by fixing the support member to the temperature control body, the support member is prevented from being pulled out and lifted, and the substrate is prevented from being inclined. Therefore, the temperature-controlled body can be heated uniformly, and the temperature-controlled body can be heated substantially uniformly because the peripheral portion of the temperature-controlled body is supported. In addition, since the recess for storing the support member is not provided with an opening, there is no problem that dust or the like is accumulated. Furthermore, since the support member is loosely fitted to the temperature control body, it is possible to prevent damage to the support member during heating due to the difference in expansion rate.
[Brief description of the drawings]
FIG. 1 is a plan view showing an embodiment of the present invention.
2 is a cross-sectional view taken along the line AA of the embodiment shown in FIG.
FIG. 3 is a plan view showing a main part of one embodiment of the present invention.
FIG. 4 is a cross-sectional view showing the main part of another embodiment of the present invention.
FIG. 5 is a sectional view showing another embodiment of the present invention.
FIG. 6 is a plan view showing another embodiment of the present invention.
FIG. 7 is a plan view showing a conventional example.
FIG. 8 is a cross-sectional view showing a conventional example.
[Explanation of symbols]
101... Temperature adjustment body 104... Semiconductor wafer (temperature adjustment body)
102 ... Support member 102a ... Embedded portion 102b ... Projecting portion 402 ... Fixing member 402b ... Hole 403, 403a ... Storage portion
