JP2806650B2 - Temperature control device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for controlling the temperature of a substrate such as a semiconductor wafer and a substrate for a liquid crystal display (LCD) .
The present invention relates to a temperature control device.

[0002]

2. Description of the Related Art Conventionally, various heating apparatuses have been used for performing heat treatment on substrates such as semiconductor wafers and glass substrates for LCDs. For example, in a photoresist processing step of a semiconductor manufacturing process, a heat treatment is performed to dehydrate moisture on the surface of a semiconductor wafer, or to remove a solvent in a resist applied to the wafer surface. As the heating method, there are a direct hot plate method, a batch type hot air heating method, a microwave method, and the like.
The direct hot plate method has become the mainstream under the demands of efficiency improvement, cycle time reduction, and improvement of reproducibility and uniformity.

However, in the direct hot plate method, since the semiconductor wafer is brought into close contact with the hot plate and directly heated, the uniformity of heat is greatly affected by the state of contact between the hot plate and the semiconductor wafer. Therefore, there are problems such as heavy metal contamination and adhesion of particles to the back surface of the semiconductor wafer.

In order to eliminate such a problem, there is a proximity method in which a slight gap is provided between the hot plate and the semiconductor wafer, and a heat treatment is performed without directly bringing the semiconductor wafer into close contact with the hot plate. FIG. 7 shows a plan view of a conventional proximity-type substrate heating apparatus. Also,
FIG. 8 is a sectional view taken along the line BB of FIG. 7, and the same parts as those of FIG. 7 are denoted by the same reference numerals.

In FIG. 7 and FIG. 8, three rectangular recesses 705 are provided near the center of the bottom surface of a heating table 701 having a built-in heater therein. The ceramic sphere 702 is
It is disposed so as to slightly protrude from the upper surface. A semiconductor wafer 70 is located near the center of the heating table 701.
In order to mount the substrate 4 on the heating table 701 or to remove the substrate 4 from the heating table 701, a support pin hole 703 through which a substrate support pin (not shown) enters and exits is provided.

In the substrate heating apparatus configured as described above, first, the substrate support pins are projected to the upper portion of the heating table 701 through the support pin holes 703, and then the semiconductor wafer 704 is placed on the substrate support pins. I do. Next, the semiconductor wafer 7 is accommodated by housing the substrate support pins in the lower portion of the heating table 701.
04 is placed on a ball 702 and heat treatment is performed. At this time, the sphere 702 slightly protrudes from the upper surface of the heating table 701, that is, the semiconductor wafer 704 and the heating table 701.
Between the semiconductor substrate 70 and the
No. 4, particle contamination does not occur, and heating can be performed efficiently.

[0007]

The integrated circuit (IC) formed on the semiconductor wafer 704 is usually formed on the entire surface of the semiconductor wafer 704 except for the peripheral edge. In the above-described substrate heating apparatus, the ball 702 is provided only near the center of the heating table 701. Since the semiconductor wafer 704 comes into contact with the heating table 701 through the ball 702, the vicinity of the central portion is heated to a higher temperature than other portions.

Therefore, there is a problem that the temperature distribution in the plane of the semiconductor wafer 704 becomes non-uniform. In particular, in the case of post-baking for curing a resist pattern, there has been a problem that if the temperature of a portion corresponding to the resist pattern becomes too high, the thickness and shape of the resist pattern partially change. Also, the ball 702 has a concave portion 705
Since it is arranged without being fixed inside, the heating table 70
1 and the semiconductor wafer 704 is removed.
In some cases, the semiconductor wafer 2 may be pulled out of the concave portion 705 or lifted up. If the semiconductor wafer 704 is placed in this state, the semiconductor wafer 704 is inclined with respect to the upper surface of the heating table 701, so that the heating becomes uneven. .

The present invention focuses on the fact that in a substrate requiring heat treatment, such as a semiconductor wafer or an LCD, a main portion such as a resist pattern which should be heated uniformly uniformly is arranged in a portion excluding the periphery thereof. It is an object of the present invention to provide a temperature adjusting device capable of substantially uniformly adjusting the temperature of a substrate by uniformly heating a main portion of the substrate .

[0010]

Means for Solving the Problems To achieve the above object,
Therefore, the temperature control device of the present invention has a temperature that can be set to a predetermined temperature.
The temperature control body is provided in the temperature control body and the temperature control body is not in contact with the temperature control body.
Temperature control device with a plurality of support members
The support member is a first support on which the peripheral portion of the temperature-controlled body is placed.
At a position outside the mounted temperature-controlled body.
A second support member for fixing the first support member to the temperature control body.
Is what you do. Preferably, the present invention provides the first support
The material includes a thin portion on which the peripheral portion of the temperature-controlled body is placed, and a second support.
And a thick portion fixed to the temperature control body by a holding member.
The temperature-controlled body is positioned by the part, which is particularly preferable.
Has a tapered part between the thin part and the thick part,
The part to be heated is introduced into the thin part when the body to be heated is carried in.
It becomes.

[0011]

[Action] be using a plurality of supporting members provided on the temperature controller
By supporting the temperature control body in its periphery, the temperature controller is substantially uniform temperature control, each support member is solid to temperature controller
Therefore , the support member does not come out or float, and the temperature-controlled body is uniformly heated without tilting.

Further, a first part for mounting the peripheral portion of the temperature-controlled body is provided.
The support member is positioned outside the temperature-controlled body placed on the first support member.
The second support member fixed to the temperature control body at the side position
Positioning the temperature control body and placing it on the first support member
Can be. A thick portion provided on the first support member;
A tapered part is provided between the thin parts, so that the temperature controlled body
For easy installation and accurate positioning
can do.

[0013]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a temperature control apparatus according to the present invention will
C Adhesion processing, pre-baking processing, post
Substrate heating device used for heat treatment such as baking
An embodiment applied to the invention will be described with reference to the drawings.
You. The substrate heating device has a circular shape as shown in FIGS.
The temperature control body 101 includes a heating member (not shown) capable of adjusting a heating temperature such as an electric heater inside. In addition, the heating temperature and the heating time of the temperature control body 101 can be variously set according to the purpose of the treatment. For example, in the case of the adhesion processing, about 80 to 100
Heat for about 30 seconds at ° C. In the case of pre-baking, heating is performed at about 120 to 150 ° C. for one minute.
In the case of post-baking, heating is performed at about 120 to 150 ° C. for about 1 minute. In the case of cooling for cooling, the temperature is controlled to room temperature (for example, 23 ° C.). Temperature control body 10
Three supporting members 102 for supporting a semiconductor wafer , which is a temperature-regulated body, are provided on the peripheral portion of one. Each branch
The holding member 102 is heated as described with reference to FIGS.
A recess provided in the regulating member 101, a structure such as may be structured as arranged without balls not fixed formed by ceramics or the like within this recess, but fixed to the temperature controller 101 as described below Is also good. Each support member 102 is provided with the temperature controller 10.
It protrudes by about 0.1 to 0.3 mm from the upper surface of 1.

The temperature controller 101 includes a semiconductor wafer 1.
04 on the temperature control body 101 or carried from the temperature control body 101
A support pin hole 103 through which a substrate support pin (not shown) enters and exits is provided for use when taking out . The operation of the substrate heating apparatus configured as described above will be described below. Semiconductor wafer 104 transported from a processing device such as a sender for sending a semiconductor wafer before processing or a coater for applying a photoresist to the semiconductor wafer.
First, a support pin hole 1 is provided by a transport mechanism (not shown).
The substrate is mounted on three substrate support pins protruding above the temperature control body 101 through the substrate 03.

Next, the respective substrate support pins are accommodated in the lower part of the temperature controller 101, whereby the semiconductor wafer 104 is placed on the support member 102. In this state, the semiconductor wafer 104 is heated by an electric heater built in the temperature controller . The heating temperature and the heating time are variously set according to the type of the processing as described above. The support member 102
Since the upper surface of the temperature controller 101 protrudes about 0.1 to 0.3mm, that is, since the gap of about 0.1 to 0.3mm between the semiconductor wafer 104 and the temperature controller 101 is present, the semiconductor substrate 1 04 Does not cause particle contamination or the like, and can be efficiently heated.

[0016] At this time, each support member 102 temperature controller 10
1, the semiconductor wafer 1
04 is supported by each support member 102 near its end. Accordingly, the peripheral portion of the support member 102 near the end of the semiconductor wafer 104 is heated to a higher temperature than the other portions. However, since the IC is provided inside the end of the semiconductor wafer 104, the IC is The provided portion is uniformly heated by radiant heat from the heating table or the like, and the semiconductor wafer 104 can be substantially uniformly heated.

The semiconductor wafer 104, which has been subjected to the heat treatment as described above , is provided with the substrate support pins through the support pin holes 103.
By projecting the temperature control body 101 above, the temperature control body 10
It is removed from 1 and transported to the next step. The substrate shown in FIG.
The heating device is another embodiment of the present invention, and the same parts as those in FIG. 1 are denoted by the same reference numerals.

In the embodiment shown in FIG. 3, a support member 301 is provided at the center of the heating table 101 in addition to the embodiment shown in FIG. The tip of the support member 301, that is, the contact portion with the semiconductor wafer 104 is preferably made as thin as possible from the viewpoint of particle attachment and uniformity of heating. When the diameter of the semiconductor wafer 104 becomes large, for example, about 8 inches, when only the vicinity of the end is supported by the support member 102, the semiconductor wafer 104 bends, and the central part thereof has temperature control.
It may come into contact with the body 101 and be contaminated by particles or the like. However, the support member 30 provided at the center portion
By supporting the semiconductor wafer with 1, the semiconductor wafer 104 can be prevented from bending, and the entire semiconductor wafer 104 can be more uniformly heated.

FIGS. 4A and 4B are views showing the structure of the above-mentioned supporting members 102 and 301, and the same parts as those in FIG. 1 are denoted by the same reference numerals. 4A and 4B , the projection member 40 is a support member having a circular plan view.
1 is accommodated in a concave portion 403 provided in the temperature control body 101 and is fixed by a nut 402 screwed with a screw portion 404 provided on a side wall of the concave portion 403. Protrusion 401
Protrudes from the upper surface of the temperature control body 101 by about 0.1 to 0.3 mm. Semiconductor wafers 104 is placed on the protruding member 40 1. In the above-described fixing, instead of screwing the nut 402, a resin ring-shaped member made of a material such as PTFE may be press-fitted and attached to the concave portion to fix the projecting member 401.

As described above, the protrusion member 401 is connected to the temperature control body 10.
1, the protrusion member 401 is pulled out,
Therefore, the semiconductor wafer 104 can be prevented from inclining with respect to the upper surface of the temperature control body 101. Also, a recess for storing the ball is opened.
Because there is no garbage, there is no problem that garbage and the like accumulate.

In an embodiment to which the temperature control device of the present invention is applied,
A heating device for manufacturing a semiconductor wafer is shown in FIG.
(B). 1 are given the same reference numerals. The sheet 501 as a first support member is a second support member.
It is fixed on the temperature control body 101 by a SUS screw member 503 via a Teflon washer 502 as a member. As the sheet 501, a material having heat resistance, not easily deformed, and having no dust generation, for example, ceramic is used. The sheet 501 has a thickness of about 0.1 to 0.3 mm, on which the semiconductor wafer 104 is mounted.

[0022] The above as the sheet 501 temperature controller 101
, The sheet 501 does not come off or float, and thus the semiconductor wafer 104 can be prevented from tilting. Further, while it is extremely difficult to manufacture and bury a ball having high dimensional accuracy, the sheet 501 can be easily formed and changed in various thicknesses. Therefore, by changing the thickness of the sheet 501, it is possible to easily change the gap between the temperature controller 101 and the semiconductor wafer 104 in various ways. Further, since no recess is provided for accommodating the ball, there is no problem that dust and the like are stored.

FIG. 6 shows another embodiment of the present invention.
(A) and (b) show. 1 are given the same reference numerals. The first support member 601 made of ceramic is
It is composed of a thin part 603 and a thick part 604. Thin
Part 603 has a thickness of about 0.1 to 0.3mm The wall
A tapered portion 60 is provided at the joint between the thick portion 604 and the thin portion 603.
5 are formed. The first support member 601, the second
It is fixed to the temperature controller 101 by a screw member 602 serving as a support member . The semiconductor wafer 104 is placed on the thin portion 603.

As described above, the temperature of the first support member 601 is controlled.
By fixing the first support member 601 to the body 101,
Does not come out or float, and therefore, the semiconductor wafer 104 can be prevented from tilting.
Also, the tapered portion 60 formed on the first support member 601
Reference numeral 5 has a function of guiding the semiconductor wafer 104. Therefore, even when the position of the semiconductor wafer is slightly displaced when placing a semiconductor wafer 104 to the temperature controller 101, the semiconductor wafer 104 slides along the tapered portion 3, the
It is placed at the center of one support member 601, that is, at the center of the temperature controller .

As described above, according to each of the above embodiments, the substrate can be heated substantially uniformly.
In addition, since the substrate can be prevented from tilting, it is possible to perform uniform heating. Furthermore, by adopting a structure in which a concave portion for accommodating a ball is not provided in the temperature control body 101,
Since the portion of the temperature control body facing the semiconductor wafer 104 is flat, there are various effects such as uniform heating.

Although the above-described embodiment relates to a substrate heating apparatus for a semiconductor wafer, it can also be used for various substrates such as an LCD substrate which requires a heating process. In addition, although the description has been made with reference to the example of the circular substrate, the present invention can be applied to the case of a polygonal substrate such as a triangle and a square. Further, the first in the embodiment of FIG. 5
Although the sheet is used as the supporting member of the above, a wire-shaped member may be used.

[0027]

As is clear from the above description, the present invention
According to Ming, it is possible to heat the temperature control object substantially uniformly.
It is possible to prevent the substrate from tilting
Therefore, uniform heating is possible. In addition, the temperature of
Facilitate introduction into the physical condition, and position and place
Can be

[Brief description of the drawings]

FIG. 1 is a plan view showing an embodiment of the present invention.

FIG. 2 is a cross-sectional view taken along line AA of the embodiment of FIG.

FIG. 3 is a plan view showing another embodiment of the present invention.

4 (a) and 4 (b) each show another embodiment of the present invention.
Partial plan view showing a main part of施例, partial cross-sectional view

5 (a) and 5 (b) each show an embodiment of the present invention .
Partial plan view and partial cross-sectional view showing main parts of the example

FIGS. 6 (a) and 6 (b) each show another embodiment of the present invention.
Partial plan view showing a main part of施例, partial cross-sectional view

FIG. 7 is a plan view of a conventional substrate heating apparatus.

8 is a cross-sectional view of the substrate heating apparatus taken along line BB shown in FIG. 7;

[Explanation of symbols]

101 temperature control body 104 semiconductor wafer (temperature control target) 501, 601 first support members 502, 503, 602 second support member 603 thin portion 604 ... Thick part 605 ... Tapered part

Claims (3)

(57) [Claims] 1. A temperature control body which can be set to a predetermined temperature, and said temperature control
Provided on the body to hold the temperature-controlled body in non-contact with the temperature-controlled body.
In a temperature control device having a plurality of support members,
The supporting member is a first member on which the peripheral portion of the temperature-controlled body is placed.
Support member, and at a position outside the temperature-controlled body to be mounted.
In which the first support member is fixed to the temperature control body.
And a supporting member. 2. The apparatus according to claim 1, wherein the first supporting member is provided in front of the temperature-controlled body.
A thin portion on which the peripheral portion is placed and the second support member;
A thick portion fixed to the temperature control body.
Characterized in that the temperature-controlled body is positioned by
The temperature adjusting device according to claim 1. 3. A tapered portion is provided between the thin portion and the thick portion.
The tapered portion is provided when the temperature-controlled body is carried in.
Characterized in that a temperature-controlled body is introduced on the thin portion.
The temperature adjusting device according to claim 2.