JP3024623B2 - Semiconductor device and method of manufacturing semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device in which bumps are provided on a semiconductor chip via a tape carrier, and a method for manufacturing the same.

[0002]

2. Description of the Related Art A conventional semiconductor device of this type is constructed, for example, as shown in FIG. FIG. 7 shows a conventional BGA (Ba
1 is a cross-sectional view of a semiconductor chip portion of an (ll Grid Array) type semiconductor device. In FIG. 1, reference numeral 1 denotes a semiconductor chip, 2 denotes a tape carrier, and 3 denotes a solder bump.

The semiconductor chip 1 has an electrode (not shown) formed on the upper surface of FIG. 7, and a tape carrier 2 is adhered to the electrode forming surface. This tape carrier 2 has a wiring pattern 5 made of copper foil or the like formed on a base material 4 made of a polyimide resin, and a solder resist 6
Is formed so that the wiring pattern 5 is covered.
The solder resist 6 is also made of a polyimide resin.

The connection between the wiring pattern 5 and the electrode of the semiconductor chip 1 is made by a back side connection bump (not shown) formed in the tape carrier 2 via a through hole (not shown).
Is connected to the electrodes of the semiconductor chip by a connection method such as solder connection or Au-Au thermal pressure welding.

The solder bumps 3 are provided on the tape carrier 2 so as to be arranged in a grid pattern. After the tape carrier 2 is bonded to the semiconductor chip 1, solder balls (not shown) are provided.
Are placed in the solder bump forming openings 6a of the solder resist 6, and the solder balls are heated and melted in a reflow furnace (not shown) and then solidified.

In the conventional BGA type semiconductor device, after the tape carrier 2 is bonded to the semiconductor chip 1 and the solder bumps 3 are provided as described above, the semiconductor chip 1 is attached to the back side of the tape carrier 2 (opposite to the solder bumps 3). Side) and sealed with a mold resin or a sealing cap.

[0007] The BGA type semiconductor device thus configured is automatically mounted on a printed wiring board by a flip chip mounter (not shown). The positioning of the BGA type semiconductor device with respect to the semiconductor device mounting portion of the printed wiring board is performed by photographing the bump surface of the BGA type semiconductor device shown in FIG. 8A with a CCD camera indicated by reference numeral 7 in FIG. I have. 8 and 9, the same or equivalent members as those described with reference to FIG. 7 are denoted by the same reference numerals, and detailed description is omitted. In FIG. 9, what is indicated by reference numeral 8 on the side of the CCD camera 7 is illumination.

That is, the bump surface is connected to the CCD camera 7.
As shown in FIG. 8B, the image is taken as a binary image in which the outer shape of the solder bump 3 appears, and the position of the semiconductor device hand of the flip chip mounter is corrected based on this image, and the BGA type semiconductor The device is mounted at a predetermined mounting position on the printed wiring board without causing a positional shift.

[0009]

However, in the conventional BGA type semiconductor device configured as described above, when mounting on a printed wiring board with a flip-chip mounter, the positioning accuracy becomes low or the time required for position correction is reduced. There was a problem that becomes longer. This is because, when the bump surface of the BGA type semiconductor device is photographed by the CCD camera 7, the light of the illumination 8 is reflected also on the wiring pattern 5 below the solder resist 6, and the solder is included in the binary image of the bump surface. This is because the wiring pattern 5 appears in addition to the bump 3. The light of the illumination 8 is reflected on the wiring pattern 5 because the polyimide resin, which is a material of the solder resist 6, is translucent or transparent, and the light is transmitted therethrough.

That is, when the light of the illumination 8 is reflected by the wiring pattern 5 and enters the CCD camera 7 as reflected light, a white portion indicated by reference numeral 9 in FIG. 8B appears in a binary image. However, the flip chip mounter erroneously identifies the white portion 9 as the solder bump 3. This erroneous recognition causes problems such as a decrease in positioning accuracy and an increase in mounting time as described above.

The problem caused by such an erroneous recognition is that, as shown in FIG. 9B, if the solder bumps 3 are illuminated from the side by the illumination 8, the light reflected by the wiring pattern 5 can be reduced. The light does not enter the CCD camera 7 and can be eliminated.

However, a BGA type semiconductor device and a QFP (Qu
ad Flat Package) When mounting a semiconductor device or the like on a printed wiring board with a single flip-chip mounter, the position of the lighting cannot be changed so that light is emitted from the side. This is the QFP type semiconductor device
0 (a), a structure is employed in which a lead 10a projects to the side of the package body 10.
In order to accurately capture the image a with the CCD camera 7, FIG.
This is because the illumination 8 must be positioned so that light is emitted to the lead 10a from a direction substantially perpendicular to the upper surface, as shown in FIG.

That is, as shown in FIG. 11A, light is irradiated to the lead 10a from almost right above, so that
Although the lead 10a can be identified by a binary image as shown in FIG. 0 (b), when light was radiated obliquely to the lead 10a as shown in FIG. 11 (b), it was reflected by the lead 10a. This is because the light does not enter the CCD camera 7 or the amount of light becomes extremely small even if it enters the CCD camera 7, so that the difference in brightness of the binary image becomes small and the lead 10a cannot be recognized.

When a BGA type semiconductor device is mounted,
If the position of the illumination 8 is changed between when the FP type semiconductor device is mounted, both of these semiconductor devices will be CCD camera 7
However, the conventional flip chip mounter cannot change the position of the illumination 8 until the apparatus is stopped. That is, since the BGA type semiconductor device and the QFP type semiconductor device cannot be mounted on one printed wiring board in a series of flow operations, the mounting time becomes extremely long even with automatic mounting.

For this reason, it is demanded that erroneous recognition does not occur even if light is irradiated from a direction perpendicular to the bump formation surface.

The present invention has been made in order to solve such a problem, and a semiconductor device which does not cause erroneous recognition by a flip chip mounter even when light is irradiated to a bump forming surface from a direction perpendicular to the surface. It is an object to provide a method for manufacturing a semiconductor device.

[0017]

In order to achieve this object, a semiconductor device according to the present invention is provided on a surface of a tape carrier on a bump side, on a solder resist for protecting a wiring layer.
In addition, an anti-transmission film having low light transmittance is formed thereon. According to the present invention, since the anti-transmission film absorbs light, the amount of light reaching the wiring layer in the tape carrier and the amount of reflected light reflected by the wiring layer and entering the camera are reduced.

In a semiconductor device according to another invention, the surface of a solder resist for protecting a wiring layer of a tape carrier is formed with a rough surface having a roughness that irregularly reflects light. According to this invention, light is irregularly reflected on the uneven surface,
The amount of light reaching the wiring layer in the tape carrier and the amount of reflected light reflected by the wiring layer and incident on the camera is reduced.

According to another aspect of the invention, there is provided a method of manufacturing a semiconductor device.
A tape carrier having a wiring layer is adhered to the electrode forming surface of the semiconductor chip to provide bumps on the surface of the tape carrier,
After forming a mask film on the bumps, an anti-light-transmitting film having low translucency made of a material having no affinity with the mask film is formed on the surface of the tape carrier. This is done by removing the membrane for the application. According to the present invention, since the transmission preventing film is repelled by the mask film and does not adhere to the bumps, the transmission preventing film can be formed by a simple method.

According to another aspect of the invention, there is provided a method of manufacturing a semiconductor device.
A tape carrier having a wiring layer is adhered to an electrode forming surface of a semiconductor chip, bumps are provided on the surface of the tape carrier, and then the surface of the tape carrier is subjected to a surface treatment for forming irregularities for irregularly reflecting light. I do. According to the present invention, light can be irregularly reflected by unevenness on the surface of the tape carrier, so that a layer for irregularly reflecting the light does not need to be added to the surface of the tape carrier.

[0021]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS First Embodiment A first embodiment of a semiconductor device and a method of manufacturing a semiconductor device according to the present invention will be described below in detail with reference to FIGS. FIG. 1 is a plan view showing a bump surface of a semiconductor device according to the present invention, FIG. 2 is a plan view showing an enlarged part of the bump surface, and FIG. 3 is a cross-sectional view of the semiconductor device according to the present invention. 4A and 4B are cross-sectional views for explaining steps up to the provision of bumps. FIG. 4A shows a state in which electrodes are formed on a semiconductor chip, and FIG. 4B shows a state in which a tape carrier is bonded. FIG. 3C shows a state in which the semiconductor chip is sealed,
FIG. 4D shows a state in which bumps are provided.

FIG. 5 is a cross-sectional view for explaining a step of forming a transmission preventing film on a tape carrier. FIG. 5A shows a state where ultraviolet light is irradiated, and FIG. FIG. 3C shows a state before the film is provided, and FIG. 4C shows a state after the mask film is provided. FIG. e) shows a state in which the mask film has been removed. FIG. 5 schematically illustrates only the surface layer portion of the semiconductor device. In these figures, the same or equivalent members as those described in FIGS. 7 to 11 are denoted by the same reference numerals, and detailed description is omitted.

1 to 5, reference numeral 11 denotes a semiconductor device according to this embodiment. As shown in FIG. 3, in the semiconductor chip 1 of the semiconductor device 11, the wiring pattern 5 of the tape carrier 2 is connected to the electrode 1a via the through hole 12 and the Cu bump 13. A layer 14 indicated between the tape carrier 2 and the semiconductor chip 1 is an adhesive layer for bonding the tape carrier 2 to the semiconductor chip 1. Reference numeral 15 that covers the side and lower part of the semiconductor chip 1 is a sealing resin for sealing the semiconductor chip 1.

The semiconductor device 11 includes a tape carrier 2
Is formed with an anti-permeation film 16 on its surface. In this embodiment, the anti-permeation film 16 is made of a resin material obtained by mixing a black pigment into a polyimide silicon resin.
It is formed by applying it to the surface of a solid and solidifying it. The anti-permeation film 16 is formed of the semiconductor device 11 shown in FIG.
Is formed in a state where the solder bumps 3 are exposed over the entire area of the bump surface.

Since the transmission preventing film 16 absorbs light by forming the transmission preventing film 16 on the surface of the tape carrier 2 as described above, even if the solder resist 6 is translucent or transparent, as shown in FIG. 5 becomes difficult to see. Therefore, when light is applied to the bump surface of the semiconductor device 11 from a direction substantially perpendicular to the surface, the light reaches the wiring pattern 5 in the tape carrier 2 and is reflected by the wiring pattern 5 and exits the semiconductor device 11. The amount of reflected light is reduced as compared with a conventional semiconductor device.

Therefore, the semiconductor device 11 is
In the process of correcting the position with a flip chip mounter by photographing with a camera, a binary value image of the bump surface photographed by irradiating the bump surface with illumination light from a direction substantially perpendicular to this surface,
The difference in brightness between the solder bump 3 and other portions is large. As a result, it is possible to prevent the flip chip mounter from causing erroneous recognition.

Next, a method of manufacturing the above-described semiconductor device 11 will be described in detail with reference to FIGS. In order to manufacture the semiconductor device 11, first, as shown in FIG. 4A, the semiconductor chip 1 on which the electrode 1a is formed is formed as shown in FIG.
The tape carrier 2 is superposed on the semiconductor chip 1 by an adhesive layer 14, and the Cu bump 13 of the tape carrier 2 is connected to the electrode 1a by a bonding tool indicated by reference numeral 17 in FIG. To join.

Next, as shown in FIG. 4C, the sealing resin 15 is molded by a molding die (not shown) so that the semiconductor chip 1 is covered on the back side of the tape carrier 2. After the semiconductor chip 1 is sealed with the resin, the solder bumps 3 are formed on the tape carrier 2 as shown in FIG. The solder bumps 3 are formed by using solder balls in the same manner as in the prior art. In addition, a solder paste is supplied to the solder bump forming openings 6a of the solder resist 6 by a screen printing method, and the solder paste is supplied to a reflow oven (FIG. (Not shown), and then solidify after heating and melting.

After the solder bumps 3 are formed, the surface of the tape carrier 2 is irradiated with ultraviolet rays by an ultraviolet ray irradiating device 18 as shown in FIG. The reason for irradiating the ultraviolet rays in this manner is to modify the surface of the solder resist 6 made of a polyimide resin and to enhance the wettability of the resin material of the transmission preventing film 16 on the surface.

Next, as shown in FIGS. 5B to 5C, a mask film 19 is formed on the top of the solder bump 3. This mask film 19 is for preventing the resin material from adhering to the top of the solder bump 3 in a coating step of the transmission preventing film 16 described later, and has an affinity with the resin material forming the transmission preventing film 16. There is no material. In this embodiment, since the transmission preventing film 16 is formed of a polyimide silicon resin, the material of the mask film 19 is a fluorine resin having no affinity for the polyimide silicon resin.

In order to form the mask film 19 on the top of the solder bump 3, first, as shown in FIG. 5C, a film of a fluororesin 21 is formed on the lower surface of a rubber plate 20. The plate 20 is overlaid on the semiconductor device 11 and pressed. Then, as shown in FIG. 5D, the plate 20 is separated above the semiconductor device 11. Thus, the plate 20 is connected to the semiconductor device 11.
The fluororesin 21 is transferred to the tops of the solder bumps 3 to form the mask film 19.

After the mask film 19 is formed as described above, the material resin 23 of the transmission preventing film 16 is applied by the dispense nozzle 22 to the entire surface (upper surface) of the tape carrier 2 as shown in FIG. I do. At this time, since the mask film 19 is formed of a material having no affinity with the material resin 23, the material resin 23 is
Even if it hangs over the mask 9, it is repelled by the mask film 19 and does not spread on the mask film 19. This material resin 23 is applied by applying the material resin 23 to the approximate center of the bump surface, and pressing a pressing plate (not shown) against the material resin 23 from above so that the material resin 23 is spread over the entire bump surface. It can also be implemented by expanding.

Thereafter, the material resin 23 is heated and cured, and the mask film 19 is removed as shown in FIG. 5E, thereby completing the manufacturing process of the semiconductor device 11 according to the present invention. The material resin 23 gathers at the base of the solder bump 3 during the curing process, and the volume thereof is reduced due to the evaporation of the solvent when hardening. In addition, the film for mask 1
The removal of 9 is performed by dissolving the mask film 19 with a solvent in which the fluororesin dissolves and the polyimide silicon resin does not dissolve. For example, the masking film 19 is wiped by rubbing the solder bumps 3 with a cloth impregnated with the solvent, or the solvent is sprayed on the solder bumps 3 for cleaning.

The manufacturing method described above employs a configuration in which the material resin 23 of the transmission preventing film 16 is prevented from adhering to the solder bumps 3 by the masking film 19 as shown in FIGS. The material resin 23 can be spread on the upper surface of the tape carrier 2 by a simple application operation. Therefore, the formation of the transmission preventing film 16 is simple, and an increase in the number of manufacturing steps can be suppressed as much as possible despite the fact that one layer is added as compared with the conventional semiconductor device.

In this embodiment, the transmission preventing film 16 is used.
Although the example in which the material resin 23 is made of polyimide silicon resin and the material of the mask film 19 is made of fluororesin, these synthetic resins can be appropriately changed. For example, as the material resin 23, an epoxy-based resin or a phenol-based resin can be employed in addition to the polyimide silicon resin.
When the material resin 23 is a polyimide silicon resin, the material of the mask film 19 can be a paraffin resin. When an epoxy resin is used as the material resin 23, the material of the mask film 19 can be a paraffin resin in addition to the fluororesin. When the material resin 23 is a phenol resin, the material for the mask is used. The material of the film 19 can be a paraffin resin or a silicone resin in addition to the fluororesin.

As a method for removing the mask film 19, when the material for forming the mask film 19 is a paraffin resin or a silicone resin, the adhesion to the solder bumps 3 is relatively low. A sonic cleaning method can be employed. Further, when the mask film 19 is formed of a paraffin-based resin, the resin is evaporated or decomposed by the heat applied in the process of curing the material resin 23. Therefore, is a removal step after the curing unnecessary? Even if it is removed, the removal amount is small.

Further, in this embodiment, the transmission preventing film 1 is used.
Although the example in which 6 is colored black has been described, the color and amount of the pigment mixed into the material resin 23 of the permeation prevention film 16 can be appropriately changed. That is, even if the light transmitted through the anti-transmission film 16 and reflected by the wiring pattern 5 is incident on the CCD camera, in the binary image obtained by the CCD camera, the solder bump 3 and other parts are not reflected. The color and the amount of the pigment can be changed as long as the difference in brightness is within the allowable range, in other words, as long as erroneous recognition does not occur.

Second Embodiment A semiconductor device and a method of manufacturing a semiconductor device according to another invention will be described in detail with reference to FIG. FIG. 6 is an enlarged sectional view showing a main part of a semiconductor device according to another invention. In this figure, the same or equivalent members as those described in FIGS. 1 to 5 and FIGS. 7 to 11 are denoted by the same reference numerals, and detailed description is omitted.

In the semiconductor device 11 shown in FIG. 6, fine irregularities 31 are formed on the surface of the solder resist 6. The irregularities 31 are formed by a surface treatment for roughening the surface of the solder resist so that the light impinging on the surface of the solder resist 6 can be irregularly reflected. This surface treatment can be formed by, for example, a sand blast method, a brushing method, a dry etching method, or the like. In order to allow light to be irregularly reflected, the maximum surface roughness of the solder resist 6 is, for example, 5 μm.
The surface treatment is performed so as to be 10 to 10 μm. Note that this surface treatment is performed after the solder bumps 3 are formed on the tape carrier 2.

Accordingly, in the semiconductor device having the irregularities 31 formed as described above, the light that reaches the wiring patterns 5 in the tape carrier 2 and the light reflected by the wiring patterns 5 due to the irregular reflection of the light by the irregularities 31 are reflected by the CCD camera. Since the amount of the reflected light incident on the flip chip mounter is reduced, it is possible to prevent the flip chip mounter from causing erroneous recognition as in the case of the first embodiment.

Since the irregularities 31 are formed by subjecting the solder resist 6 to a surface treatment, light can be irregularly reflected on the surface of the tape carrier 2, and a layer for irregularly reflecting light can be formed on the surface of the tape carrier 2. No need to add. For this reason, even with this manufacturing method, it is possible to manufacture a semiconductor device with no false recognition by the flip chip mounter while minimizing an increase in the number of manufacturing steps as in the case of employing the first embodiment. .

[0042]

As described above, according to the present invention, since the anti-transmission film absorbs light, the amount of light reaching the wiring layer in the tape carrier and the amount of reflected light reflected by the wiring layer and entering the camera are increased. Is reduced.

Therefore, a binary image of the bump surface taken by illuminating the bump surface of the semiconductor device according to the present invention from a direction substantially perpendicular thereto has a large difference in brightness between the bump and other portions. Become. As a result, when this semiconductor device is mounted on a printed wiring board with a flip-chip mounter, the positioning accuracy can be increased, and the position correction can be performed in a short time, thereby shortening the mounting time. it can. In addition, since a BGA type semiconductor device and a QFP type semiconductor device can be mounted on a single printed wiring board in a series of operations using a flip chip mounter which cannot change the lighting position during operation. The manufacturing time of an electronic device using the semiconductor device according to the present invention can be reduced.

According to another aspect of the present invention, the surface of the tape carrier has an uneven surface having a roughness that causes irregular reflection of light. The amount of reflected light that is reflected and enters the camera is reduced. Therefore, in the binary image of the bump surface photographed by illuminating the bump surface of the semiconductor device according to the present invention from a direction substantially perpendicular to the bump surface, the difference in brightness between the bump and the other portions is large. As a result, when this semiconductor device is mounted on a printed wiring board with a flip-chip mounter, the positioning accuracy can be increased, and the position correction can be performed in a short time, thereby shortening the mounting time. it can. In addition, since a BGA type semiconductor device and a QFP type semiconductor device can be mounted on a single printed wiring board in a series of operations using a flip chip mounter which cannot change the lighting position during operation. The manufacturing time of an electronic device using the semiconductor device according to the present invention can be reduced.

According to a method for manufacturing a semiconductor device in which a mask film is formed on a bump and then a permeation prevention film is formed of a material having no affinity with the mask film, the permeation prevention film is formed of a mask film. Since the anti-permeation film is not repelled and does not remain on the tip of the bump, the permeation prevention film can be formed by a simple method such as coating. Therefore, it is possible to manufacture a semiconductor device free from erroneous recognition by the flip chip mounter while minimizing an increase in the number of manufacturing steps.

According to the method of manufacturing a semiconductor device in which irregularities are formed on the surface of the tape carrier by surface treatment, light can be irregularly reflected by the irregularities on the surface of the tape carrier. Need not be added. Therefore, even with this manufacturing method, it is possible to manufacture a semiconductor device which is free from erroneous recognition by the flip chip mounter while minimizing an increase in the number of manufacturing steps.

[Brief description of the drawings]

FIG. 1 is a plan view showing a bump surface of a semiconductor device according to the present invention.

FIG. 2 is an enlarged plan view showing a part of a bump surface.

FIG. 3 is a sectional view of a semiconductor device according to the present invention.

FIG. 4 is a cross-sectional view illustrating a process until a bump is provided.

FIG. 5 is a cross-sectional view for explaining a step of forming a transmission prevention film on a tape carrier.

FIG. 6 is an enlarged cross-sectional view showing a main part of a semiconductor device according to another invention.

FIG. 7 is a sectional view of a semiconductor chip portion of a conventional BGA type semiconductor device.

FIG. 8 shows a plan view and a binary image of a conventional BGA type semiconductor device.

FIG. 9 is a configuration diagram showing a state in which a BGA type semiconductor device is photographed by a CCD camera.

FIG. 10 shows a plan view and a binary image of a conventional QFP semiconductor device.

FIG. 11 is a configuration diagram showing a state in which a QFP type semiconductor device is photographed by a CCD camera.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Semiconductor chip, 2 ... Tape carrier, 3 ... Solder bump, 6 ... Solder resist, 16 ... Anti-permeation film, 19 ...
Mask film, 31 ... unevenness.

Claims (4)

(57) [Claims] 1. A tape key having a bump provided on a part of a wiring layer.
In a semiconductor device in which a carrier and a semiconductor chip are connected, a solder layer for protecting the wiring layer of the tape carrier.
A semiconductor device having a low light-transmitting anti-transmission film formed on a dist . 2. A tape key having a bump provided on a part of a wiring layer.
In a semiconductor device in which a carrier and a semiconductor chip are connected, a solder layer for protecting the wiring layer of the tape carrier.
A semiconductor device, wherein a surface of a dist is formed as an uneven surface having a roughness at which light is irregularly reflected. 3. A tape carrier having a wiring layer is adhered to an electrode forming surface of a semiconductor chip, a bump is provided on a surface of the tape carrier, and a film for a mask is formed on the bump. Forming an anti-transmission film having low translucency made of a material having no affinity with the film for the mask, and thereafter removing the film for the mask. 4. A tape carrier having a wiring layer is adhered to an electrode forming surface of a semiconductor chip, and bumps are provided on the surface of the tape carrier.
A method for manufacturing a semiconductor device, comprising performing a surface treatment for forming irregularities in which light is irregularly reflected.