JP3022644B2 - Organic positive temperature coefficient thermistor - Google Patents
Organic positive temperature coefficient thermistorInfo
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- JP3022644B2 JP3022644B2 JP3225065A JP22506591A JP3022644B2 JP 3022644 B2 JP3022644 B2 JP 3022644B2 JP 3225065 A JP3225065 A JP 3225065A JP 22506591 A JP22506591 A JP 22506591A JP 3022644 B2 JP3022644 B2 JP 3022644B2
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- Prior art keywords
- temperature coefficient
- coefficient thermistor
- positive temperature
- organic positive
- powder
- Prior art date
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Description
【０００１】[0001]
【産業上の利用分野】本発明は、有機質正特性サーミス
タに関し、より詳しくは、昇温時特定の温度領域で急激
に抵抗値が増大する特性、即ち、ＰＴＣ（Positive Tem
perature Coefficient）特性を有する有機質正特性サー
ミスタに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic positive temperature coefficient thermistor.
The present invention relates to an organic positive temperature coefficient thermistor having characteristics (perature Coefficient).
【０００２】[0002]
【従来の技術】従来、ポリエチレン又はポリプロピレン
等の結晶性重合体に、金属微粉末やカーボンブラック等
を分散させたＰＴＣ特性を有する有機質正特性サーミス
タはこの技術分野では公知である。例えば、米国特許第
3591526号明細書及び同第3673121 号明細書などに開示
されている。2. Description of the Related Art Conventionally, an organic positive temperature coefficient thermistor having PTC characteristics in which a fine metal powder, carbon black or the like is dispersed in a crystalline polymer such as polyethylene or polypropylene is known in the art. For example, U.S. Patent No.
It is disclosed in the specifications of No. 3591526 and No. 3673121.
【０００３】ところで、ＰＴＣ特性は結晶性重合体がそ
の融点において、結晶質から非晶質に変化する際に急激
な体積膨脹を示すため、その中に分散された導電性微粉
末の粒子同士の間隔が押し広げられて粒子間の接触抵抗
が急激に増大するために生ずる。[0003] By the way, the PTC characteristic shows a sharp volume expansion when the crystalline polymer changes from crystalline to amorphous at the melting point, so that the particles of the conductive fine powder dispersed in the crystalline polymer are dispersed. This occurs because the spacing is expanded and the contact resistance between the particles increases rapidly.
【０００４】このような有機質正特性サーミスタは、例
えば、温度検出器あるいは自己制御型ヒーター等として
利用し得るが、この有機質正特性サーミスタに要求され
る性能はＰＴＣ特性の立ち上がりが急峻で大きな抵抗値
変化を示し、しかも室温での初期抵抗値が小さいことが
必要である。Such an organic positive temperature coefficient thermistor can be used, for example, as a temperature detector or a self-control type heater. However, the performance required of the organic positive temperature coefficient thermistor is such that the rise of the PTC characteristic is steep and a large resistance value is obtained. It is necessary to show a change and to have a small initial resistance value at room temperature.
【０００５】[0005]
【発明が解決しようとする課題】しかし、従来の有機質
正特性サーミスタにおいては、カーボンブラックを導電
性物質として充填することが多く、この場合初期抵抗値
を小さくするためにはその充填量を大きくする必要があ
った。このような場合には抵抗変化率が小さくなりヒー
ター等への適用は困難になるという問題があった。However, conventional organic positive temperature coefficient thermistors are often filled with carbon black as a conductive substance. In this case, the filling amount is increased to reduce the initial resistance value. Needed. In such a case, there has been a problem that the rate of change in resistance becomes small and application to a heater or the like becomes difficult.
【０００６】また、一般の金属微粉末粒子を導電性物質
として充填したものも知られているが、この場合にも、
同様に初期抵抗値を小さくするためにその充填量を大き
くする必要があり、また、このような場合に大きく変化
率が得られないため、実用化に至っていない。[0006] In addition, there is also known one in which general metal fine powder particles are filled as a conductive substance.
Similarly, in order to reduce the initial resistance value, it is necessary to increase the filling amount, and in such a case, a large change rate cannot be obtained, so that it has not been practically used.
【０００７】そこで、本発明は、室温での初期抵抗値が
小さく、ＰＴＣ特性の立ち上がりが急峻で大きな抵抗値
変化を示す有機質正特性サーミスタを提供することを目
的とするものである。Accordingly, an object of the present invention is to provide an organic positive temperature coefficient thermistor having a small initial resistance value at room temperature, a sharp rise in PTC characteristics and a large change in resistance value.
【０００８】[0008]
【課題を解決するための手段】請求項１記載の有機質正
特性サーミスタは、サーミスタ素体として結晶性重合体
に充填剤としての導電性粒子を含む有機質正特性サーミ
スタにおいて、前記導電性粒子は、多数の突起が形成さ
れた球状のＮｉパウダーからなることを特徴とするもの
である。The organic positive temperature coefficient thermistor according to claim 1 is a crystalline polymer as a thermistor body.
Organic positive temperature coefficient thermistor containing conductive particles as filler
In the star, the conductive particles have a large number of protrusions formed.
Characterized in that it is formed of a spherical Ni powder .
【０００９】請求項２記載の有機質正特性サーミスタ
は、サーミスタ素体として結晶性重合体に充填剤として
の導電性粒子を含む有機質正特性サーミスタにおいて、
前記導電性粒子として多数の突起が形成された球状のＮ
ｉパウダーを有し、該Ｎｉパウダーは鎖状に連結されて
いることを特徴とするものである。[0009] The organic positive temperature coefficient thermistor according to claim 2 is used as a thermistor element as a filler in a crystalline polymer.
An organic positive temperature coefficient thermistor containing conductive particles of
Spherical N on which a large number of protrusions are formed as the conductive particles
i powder, wherein the Ni powder is linked in a chain.
It is characterized by having.
【００１０】[0010]
【作用】請求項１記載の有機質正特性サーミスタによれ
ば、結晶性重合体に、多数の突起を有する球状Ｎｉパウ
ダーを充填したものであるから、真球状の導電性粒子を
充填した場合に比べ、多数の突起を有する球状Ｎｉパウ
ダー同士では、その形状故にトンネル電流が流れやす
く、これにより、導電性が良好となって、常温での初期
抵抗値が小さく、また、導電性粒子同士の間隔が球状の
ものに比べて大きいのでＰＴＣ特性の立ち上がりが急峻
で大きな抵抗値変化を呈する。According to the organic positive temperature coefficient thermistor according to claim 1, a spherical Ni powder having a large number of projections on a crystalline polymer is provided.
Since those filled with loaders, compared with a case filled with conductive spherical particles, spherical Ni Pau with multiple projections
Since the tunnel current flows easily due to the shape of the particles, the conductivity becomes good, the initial resistance value at room temperature is small, and the distance between the conductive particles is larger than that of the spherical particles. The rise of the PTC characteristic is steep and exhibits a large change in resistance value.
【００１１】請求項２記載の有機質正特性サーミスタに
よれば、結晶性重合体に、多数の突起を有する球状Ｎｉ
パウダーが鎖状に連結された形状の導電性物質を充填し
たものであるから、真球状の導電性粒子を充填した場合
に比べ、多数の突起を有しかつ、鎖状につながっている
ので、トンネル電流がより多く流れ、これにより、導電
性が良好となって、常温での初期抵抗値が小さく、ま
た、導電性粒子同士の間隔が真球状のものに比べて大き
いのでＰＴＣ特性の立ち上がりが急峻で大きな抵抗値変
化を呈する。According to the organic positive temperature coefficient thermistor of the second aspect, the crystalline polymer has a spherical Ni having a large number of protrusions.
Since the powder is filled with a conductive material having a shape linked in a chain, the powder has a large number of protrusions and has a chain shape as compared with the case where the powder is filled with spherical conductive particles. Since they are connected, a larger amount of tunnel current flows, thereby improving the conductivity, reducing the initial resistance value at room temperature, and increasing the spacing between the conductive particles as compared to a true spherical particle. The rise of the PTC characteristic is steep and exhibits a large change in resistance value.
【００１２】[0012]
【実施例】以下に本発明の実施例を詳細に説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described below in detail.
【００１３】第１の実施例の有機質正特性サーミスタ
は、結晶性重合体と、この結晶性重合体に導電性物質と
して混練した多数の突起を有する所定量の球状Ｎｉパウ
ダーからなるものである。この有機質正特性サーミスタ
の顕微鏡写真を図１に示す。An organic positive temperature coefficient thermistor according to a first embodiment comprises a crystalline polymer and a predetermined amount of spherical Ni powder having a large number of projections kneaded as a conductive substance with the crystalline polymer.
It consists of dar . A micrograph of this organic positive temperature coefficient thermistor is shown in FIG.
【００１４】図１に示す写真から明らかなように、本実
施例の有機質正特性サーミスタによれば、多数の導電性
粒子のスパイク状の突起があるが故にトンネル電流が流
れやすく、これにより、導電性が良好となって、常温で
の初期抵抗値が小さく、導電性粒子同士の間隔が球状の
ものに比べて大きいので接触点が容易に切れてＰＴＣ特
性の立ち上がりが急峻で大きな抵抗値変化を得ることが
できる。As is apparent from the photograph shown in FIG. 1, according to the organic positive temperature coefficient thermistor of this embodiment, a tunnel current easily flows due to the presence of a large number of spike-like projections of conductive particles. The resistance is good, the initial resistance at room temperature is small, and the distance between conductive particles is large compared to spherical ones. Obtainable.
【００１５】前記結晶性重合体としては、ポリフッ化ビ
ニリデンを用いる。As the crystalline polymer, polyvinylidene fluoride is used.
【００１６】結晶性重合体としては、ポリフッ化ビニリ
デンの他、ポリエチレン，ポリエチレンオキシド、ｔ−
４−ポリプタジエン，ポリエチレンアクリレート，エチ
レン−エチルアクリレート共重合体，エチレン−アクリ
ル酸共重合体，ポリエステル，ポリアミド，ポリエーテ
ル，ポリカブロラクタム，フッ素化エチレン−プロピレ
ン共重合体，塩素化ポリエチレン，クロロスルホン化エ
チレン，エチレン−酢酸ビニル共重合体，ポリプロピレ
ン，ポリスチレン，スチレン−アクリロニトリル共重合
体，ポリ塩化ビニル，ポリカーボネート，ポリアセター
ル，ポリアルキレンオキシド，ポリフェニレンオキシ
ド，ポリスルホン，フッ素樹脂等がある。Examples of the crystalline polymer include polyvinylidene fluoride, polyethylene, polyethylene oxide, t-
4-polybutadiene, polyethylene acrylate, ethylene-ethyl acrylate copolymer, ethylene-acrylic acid copolymer, polyester, polyamide, polyether, polycaprolactam, fluorinated ethylene-propylene copolymer, chlorinated polyethylene, chlorosulfonated Examples include ethylene, ethylene-vinyl acetate copolymer, polypropylene, polystyrene, styrene-acrylonitrile copolymer, polyvinyl chloride, polycarbonate, polyacetal, polyalkylene oxide, polyphenylene oxide, polysulfone, and fluororesin.
【００１７】結晶性重合体の種類は所望の性能，用途等
に応じて適宜選択することができる。The type of the crystalline polymer can be appropriately selected according to the desired performance, application and the like.
【００１８】前記スパイク状の突起を有する導電性粒子
としては、多数の突起を有する球状Ｎｉパウダー（イン
コ・リミテッド製）を用いる。As the conductive particles having spike-like projections, spherical Ni powder (manufactured by Inco Limited) having many projections is used.
【００１９】このＮｉパウダーは、例えばカーボニル法
により製造されるものであり、９９．９９％の純度のニ
ッケルカーボニルに対し下記化学式に示す変換を行った
ものである。The Ni powder is produced, for example, by the carbonyl method, and is obtained by converting nickel carbonyl having a purity of 99.99% by the following chemical formula.
【００２０】Ｎｉ（ＣＯ）4 →Ｎｉ＋４ＣＯ その平均粒径は３乃至７μｍ（フィッシュー・サブシー
ブ法で測定）、見掛け密度は１．８乃至２．７（ｇ／ｃ
ｃ）、比表面積は０．３４乃至０．４４（ｍ2 ／ｇ）の
各物理的特性を有する。Ni (CO) 4 → Ni + 4CO The average particle size is 3 to 7 μm (measured by fish-sub-sieve method), and the apparent density is 1.8 to 2.7 (g / c).
c) The specific surface area has physical properties of 0.34 to 0.44 (m 2 / g).
【００２１】次に、第２の実施例について説明する。Next, a second embodiment will be described.
【００２２】第２の実施例の有機質正特性サーミスタ
は、結晶性重合体と、この結晶性重合体に、導電性物質
として多数の突起を有する球状Ｎｉパウダーが連結した
形状をのものを充填して得られるものである。The organic positive temperature coefficient thermistor of the second embodiment is filled with a crystalline polymer and a conductive polymer having a shape in which a spherical Ni powder having a large number of projections is connected as a conductive substance. It can be obtained by
【００２３】この有機質正特性サーミスタの顕微鏡写真
を図２に示す。FIG. 2 shows a micrograph of the organic positive temperature coefficient thermistor.
【００２４】図２に示す写真から明らかなように、本実
施例の有機質正特性サーミスタによれば、導電性物質の
各々のスパイク状の突起がトンネル電流を流し易くし、
これにより、導電性が良好となって、常温での初期抵抗
値が小さく、導電性粒子同士の間隔が大きいので、容易
に導電経路が寸断されるのでＰＴＣ特性の立ち上がりが
急峻で大きな抵抗値変化を得ることができる。As is clear from the photograph shown in FIG. 2, according to the organic positive temperature coefficient thermistor of the present embodiment, each spike-like projection of the conductive material facilitates the flow of tunnel current,
As a result, the conductivity becomes good, the initial resistance value at room temperature is small, and the distance between the conductive particles is large, so that the conductive path is easily cut off. Can be obtained.
【００２５】前記結晶性重合体としては、ポリフッ化ビ
ニリデンを用いることは第１の実施例の場合と同様であ
る。The use of polyvinylidene fluoride as the crystalline polymer is the same as in the first embodiment.
【００２６】前記各導電性物質としては、フィラメント
状鎖状Ｎｉパウダー（インコ・リミテッド製）を用い
る。As each of the conductive materials, a filament-like chain Ni powder (manufactured by Inco Limited) is used.
【００２７】このフィラメント状鎖状Ｎｉパウダーの平
均粒径は２．２乃至２．８μｍ（フィッシュー・サブシ
ーブ法で測定）、見掛け密度は０．５乃至０．９５（ｇ
／ｃｃ）、比表面積は０．５８乃至０．６３（ｍ2 ／
ｇ）の各物理的特性を有する。The average particle size of the filamentous chain Ni powder is 2.2 to 2.8 μm (measured by a fish-sub-sieve method), and the apparent density is 0.5 to 0.95 (g).
/ Cc), and the specific surface area is 0.58 to 0.63 (m 2 /
g) each physical property.
【００２８】以下、さらに詳細に説明する。The details will be described below.
【００２９】実施例１ 結晶性重合体としてポリフッ化ビニリデンを用い、導電
性物質として多数の突起を有する球状Ｎｉパウダー（平
均粒径３．０乃至７．０μｍ、インコ・リミテッド製）
を用い、該ポリフッ化ビニリデンに対して前記Ｎｉパウ
ダーを３０重量部の割合で加え、ラボプラストミル（東
洋精機製作所製）で混練後、厚さ０．７ｍｍのシートに
プレス成形し、その後架橋処理を施した。Example 1 Spherical Ni powder having a large number of protrusions as a conductive substance using polyvinylidene fluoride as a crystalline polymer (average particle size: 3.0 to 7.0 μm, manufactured by Inco Limited)
The above-mentioned Ni powder was added to the polyvinylidene fluoride at a ratio of 30 parts by weight, kneaded with a Labo Plastomill (manufactured by Toyo Seiki Seisaku-sho, Ltd.), and then pressed into a 0.7 mm-thick sheet, followed by a crosslinking treatment. Was given.
【００３０】さらに、この成形品の両面に電極としてＮ
ｉ箔を圧着し直径１０ｍｍの円板状に打ち抜いてサンプ
ルとした。Further, N electrodes are formed on both sides of the molded product as electrodes.
The i-foil was pressed and punched out into a disk having a diameter of 10 mm to obtain a sample.
【００３１】次に、このサンプルについてＰＴＣ特性を
測定した。この測定に当たっては、前記サンプルを恒温
槽内で温度上昇及び下降を行い、各所定温度における抵
抗値を測定し、温度と抵抗値の関係を求めた。この測定
結果を図３に示す。Next, the PTC characteristics of this sample were measured. In this measurement, the temperature of the sample was raised and lowered in a thermostat, the resistance at each predetermined temperature was measured, and the relationship between the temperature and the resistance was obtained. FIG. 3 shows the measurement results.
【００３２】図３に示す測定結果から、常温での抵抗値
は０．６Ωと非常に低い値でありながら、転移温度では
抵抗値が急激に上昇して、最大抵抗値は３×１０7 Ωに
なり、変化率は１０8 以上の高い値になっていることが
分かる。From the measurement results shown in FIG. 3, the resistance value at room temperature is a very low value of 0.6Ω, but at the transition temperature, the resistance value rises sharply and the maximum resistance value is 3 × 10 7 Ω. It can be seen that the rate of change is a high value of 10 8 or more.
【００３３】また、最大抵抗値を呈する１７６℃以上の
温度においても抵抗値の低下はなく、サンプルの熱によ
る変形は生じなかった。Further, even at a temperature of 176 ° C. or higher where the maximum resistance was exhibited, the resistance did not decrease and the sample did not deform due to heat.
【００３４】このように本実施例の有機質正特性サーミ
スタは、常温での抵抗値が低く、かつ、急峻なＰＴＣ特
性を持つものである。As described above, the organic positive temperature coefficient thermistor of this embodiment has a low resistance value at room temperature and has a steep PTC characteristic.
【００３５】実施例２多数の 突起を有する球状Ｎｉパウダーの含有量を２０重
量部とした他は、実施例１と同様にして円板状のサンプ
ルを形成した。Example 2 A disk-shaped sample was formed in the same manner as in Example 1, except that the content of the spherical Ni powder having many projections was changed to 20 parts by weight.
【００３６】このサンプルに対し、実施例１と同様にし
てＰＴＣ特性を測定し、図４に示す測定結果を得た。図
４から明らかなように、常温での抵抗値は１．４Ωと低
い値でありながら、転移温度では抵抗値が急激に上昇し
て、最大抵抗値は５×１０7 Ωになり、変化率は１０7
以上の高い値になった。The PTC characteristics of this sample were measured in the same manner as in Example 1, and the measurement results shown in FIG. 4 were obtained. As is clear from FIG. 4, the resistance value at room temperature is as low as 1.4Ω, but at the transition temperature, the resistance value rises rapidly, the maximum resistance value becomes 5 × 10 7 Ω, and the rate of change is Is 10 7
It was higher than the above.
【００３７】実施例３多数の 突起を有する球状Ｎｉパウダーの含有量を６０重
量部とした他は、実施例１と同様にして円板状のサンプ
ルを形成した。Example 3 A disk-shaped sample was formed in the same manner as in Example 1 except that the content of the spherical Ni powder having many projections was changed to 60 parts by weight.
【００３８】このサンプルに対し、実施例１と同様にし
てＰＴＣ特性を測定し、図５に示す測定結果を得た。図
５から明らかなように、常温での抵抗値は０．０７Ωと
非常に低い値でありながら、転移温度では抵抗値が急激
に上昇して、最大抵抗値は３×１０6 Ω・ｃｍになり、
その変化率は１０8 以上の高い値になった。The PTC characteristics of this sample were measured in the same manner as in Example 1, and the measurement results shown in FIG. 5 were obtained. As is clear from FIG. 5, the resistance value at room temperature is a very low value of 0.07Ω, but at the transition temperature, the resistance value rises sharply, and the maximum resistance value becomes 3 × 10 6 Ω · cm. Become
The rate of change was as high as 10 8 or more.
【００３９】実施例４ 結晶性重合体としてポリフッ化ビニリデンを用い、導電
性物質としてフェラメント状鎖状Ｎｉパウダー（平均粒
径２．２乃至２．８μｍ、インコ・リミテッド製）を用
い、該ポリフッ化ビニリデンに対してフィラメント状鎖
状Ｎｉパウダーを３０重量部の割合で加え、ラボプラス
トミルで混練後、厚さ０．７ｍｍのシートにプレス成形
し、その後架橋処理を施した。Example 4 Polyvinylidene fluoride was used as the crystalline polymer, and a fermented chain Ni powder (average particle size of 2.2 to 2.8 μm, manufactured by Inco Limited) was used as the conductive material. Filamentary chain Ni powder was added to vinylidene fluoride at a ratio of 30 parts by weight, kneaded with a Labo Plastomill, press-formed into a sheet having a thickness of 0.7 mm, and then subjected to a crosslinking treatment.
【００４０】さらに、この成形品の両面に電極としてＮ
ｉ箔を圧着し直径１０ｍｍの円板状に打ち抜いてサンプ
ルとした。Further, N electrodes were formed on both surfaces of this molded product as electrodes.
The i-foil was pressed and punched out into a disk having a diameter of 10 mm to obtain a sample.
【００４１】次に、このサンプルについてＰＴＣ特性を
測定した。この測定に当たっては、前記サンプルを恒温
槽内で温度上昇及び下降を行い、各所定温度における抵
抗値を測定し、温度と抵抗値の関係を求めた。この測定
結果を図６に示す。Next, the PTC characteristics of this sample were measured. In this measurement, the temperature of the sample was raised and lowered in a thermostat, the resistance at each predetermined temperature was measured, and the relationship between the temperature and the resistance was obtained. FIG. 6 shows the measurement results.
【００４２】図６に示す測定結果から、常温での抵抗値
は０．５Ωと非常に低い値でありながら、転移温度では
抵抗値が急激に上昇して、最大抵抗値は２×１０7 Ωに
なり、抵抗変化率は１０8 以上の高い値になっているこ
とが分かる。From the measurement results shown in FIG. 6, the resistance value at room temperature is a very low value of 0.5Ω, but at the transition temperature, the resistance value rises sharply and the maximum resistance value is 2 × 10 7 Ω. It can be seen that the resistance change rate is a high value of 10 8 or more.
【００４３】また、最大抵抗値を呈する１７６℃以上の
温度においても抵抗値の低下はなく、サンプルの熱によ
る変形は生じなかった。The resistance did not decrease even at a temperature of 176 ° C. or higher where the maximum resistance was exhibited, and the sample did not deform due to heat.
【００４４】このように本実施例の有機質正特性サーミ
スタは、常温での抵抗値が低く、かつ、急峻なＰＴＣ特
性を持つものである。As described above, the organic positive temperature coefficient thermistor of this embodiment has a low resistance value at room temperature and a steep PTC characteristic.
【００４５】実施例５ フェラメント状鎖状Ｎｉパウダーの含有量を２０重量部
とした他は、実施例４と同様にして円板状のサンプルを
形成した。Example 5 A disk-shaped sample was formed in the same manner as in Example 4, except that the content of the fermented chain Ni powder was changed to 20 parts by weight.
【００４６】このサンプルに対し、実施例１と同様にし
てＰＴＣ特性を測定し、図７に示す測定結果を得た。図
７から明らかなように、常温での抵抗値は１．２Ωと低
い値でありながら、転移温度では抵抗値が急激に上昇し
て、最大抵抗値は４×１０7 Ωになり、変化率は１０7
以上の高い値になった。The PTC characteristics of this sample were measured in the same manner as in Example 1, and the measurement results shown in FIG. 7 were obtained. As is clear from FIG. 7, the resistance value at room temperature is as low as 1.2Ω, but the resistance value rises rapidly at the transition temperature, the maximum resistance value becomes 4 × 10 7 Ω, and the rate of change is Is 10 7
It was higher than the above.
【００４７】実施例６ フェラメント状鎖状Ｎｉパウダーの含有量を６０重量部
とした他は、実施例４と同様にして円板状のサンプルを
形成した。Example 6 A disk-shaped sample was formed in the same manner as in Example 4, except that the content of the fermented chain Ni powder was changed to 60 parts by weight.
【００４８】このサンプルに対し、実施例１と同様にし
てＰＴＣ特性を測定し、図８に示す測定結果を得た。図
８から明らかなように、常温での抵抗値は０．０５Ωと
非常に低い値でありながら、転移温度では抵抗値が急激
に上昇して、最大抵抗値は２×１０6 Ω・ｃｍになり、
その変化率は１０8 以上の高い値になった。The PTC characteristics of this sample were measured in the same manner as in Example 1, and the measurement results shown in FIG. 8 were obtained. As is clear from FIG. 8, the resistance value at room temperature is a very low value of 0.05Ω, but at the transition temperature, the resistance value rises sharply, and the maximum resistance value becomes 2 × 10 6 Ω · cm. Become
The rate of change was as high as 10 8 or more.
【００４９】比較例１ 導電性物質をカーボンブラックとして含有量を４０重量
部とした他は、実施例３と同様にして比較サンプルを作
成した。この比較サンプルの測定結果を図９に示す。図
９から明らかなように、常温での抵抗値は０．２Ω程
度、最大抵抗値は４×１０4 Ω・ｃｍであり、変化率は
１０5 程度であった。Comparative Example 1 A comparative sample was prepared in the same manner as in Example 3, except that the conductive substance was carbon black and the content was 40 parts by weight. FIG. 9 shows the measurement results of this comparative sample. As is clear from FIG. 9, the resistance at room temperature was about 0.2 Ω, the maximum resistance was 4 × 10 4 Ω · cm, and the rate of change was about 10 5 .
【００５０】比較例２ 導電性物質を真球状Ｎｉパウダー（平均粒径３μｍ、イ
ンコ・リミテッド製）としたほかは、実施例１と同様に
して比較サンプルを作成した。この比較サンプルの測定
結果を図１０に示す。図１０から明らかなように、この
比較サンプルの常温での抵抗値は９×１０4 Ω程度、最
大抵抗値は４×１０8 Ωであり、変化率は１０3 程度で
あった。[0050] Comparative Example 2 conductive material spherical Ni powder (average particle size 3 [mu] m, manufactured by Inco Ltd.) and the other is created a comparative sample as described in Example 1. FIG. 10 shows the measurement results of this comparative sample. As is clear from FIG. 10, the resistance value of this comparative sample at room temperature was about 9 × 10 4 Ω, the maximum resistance value was 4 × 10 8 Ω, and the rate of change was about 10 3 .
【００５１】以上詳述したように、本実施例の有機質正
特性サーミスタは、導電性物質としての多数の突起を有
する球状Ｎｉパウダー又はフィラメント状鎖状Ｎｉパウ
ダーの充填量が比較的少ないにもかかわらず、常温での
低い抵抗値と、急峻なＰＴＣ特性の両方を併せ持ち、ヒ
ータ等に適用して好適である。As described in detail above, the organic positive temperature coefficient thermistor of this embodiment has a large number of protrusions as a conductive substance.
Despite having a relatively small amount of spherical Ni powder or filamentary chain Ni powder to be filled, it has both low resistance at room temperature and steep PTC characteristics and is suitable for application to heaters and the like.
【００５２】本発明は、上述した実施例に限定されるも
のではなく、その要旨の範囲内で種々の変形が可能であ
る。The present invention is not limited to the embodiments described above, and various modifications are possible within the scope of the invention.
【００５３】[0053]
【発明の効果】以上詳述した本発明によれば、上述した
構成としたことにより、以下の効果を奏する。According to the present invention described in detail above, the following effects can be obtained by employing the above-described configuration.
【００５４】請求項１記載の発明によれば、充填材とし
て真球状の導電性物質を用いた場合に比べ、多数の突起
を有する球状Ｎｉパウダーでは、トンネル電流が流れや
すいので導電性が良好となって、常温での初期抵抗値が
小さく、導電性粒子同士の間隔が比較的大きいので容易
に導電路が寸断されＰＴＣ特性の立ち上がりが急峻で大
きな抵抗値変化を呈する有機質正特性サーミスタを提供
することができる。According to the first aspect of the present invention, a spherical Ni powder having a large number of projections has a good conductivity since tunnel current flows easily in the spherical Ni powder having a large number of projections as compared with a case where a spherical conductive material is used as the filler. Accordingly, the present invention provides an organic positive temperature coefficient thermistor having a small initial resistance value at normal temperature and a relatively large distance between conductive particles, so that a conductive path is easily cut off, a rise in PTC characteristics is steep, and a large change in resistance value is exhibited. be able to.
【００５５】請求項２記載の発明によれば、充填材とし
て真球状の導電性物質を用いた場合に比べ、多数の突起
を有する球状Ｎｉパウダーが連結された形状の導電性物
質の場合、突起を有するのでトンネル電流が流れ易く、
導電性が良好となって、常温での初期抵抗値が小さく、
また、導電性粒子間隔が比較的大きいため、導電路が寸
断され易く、ＰＴＣ特性の立ち上がりが急峻で大きな抵
抗値変化を呈する有機質正特性サーミスタを提供するこ
とができる。According to the second aspect of the present invention, as compared with the case where a spherical conductive material is used as the filler, the conductive material having the shape in which the spherical Ni powder having a large number of protrusions is connected has the protrusion. The tunnel current easily flows,
Good conductivity, low initial resistance at room temperature,
In addition, since the distance between the conductive particles is relatively large, the conductive path is easily broken, and the PTC characteristic rises steeply, and an organic positive temperature coefficient thermistor exhibiting a large change in resistance value can be provided.
【図１】本発明の第１の実施例の有機質正特性サーミス
タの組織を示す顕微鏡写真FIG. 1 is a micrograph showing the structure of an organic positive temperature coefficient thermistor according to a first embodiment of the present invention.
【図２】本発明の第２の実施例の有機質正特性サーミス
タの組織を示す顕微鏡写真FIG. 2 is a micrograph showing the structure of an organic positive temperature coefficient thermistor according to a second embodiment of the present invention.
【図３】実施例１の有機質正特性サーミスタの抵抗温度
特性を示すグラフFIG. 3 is a graph showing resistance temperature characteristics of the organic positive temperature coefficient thermistor of Example 1.
【図４】実施例２の有機質正特性サーミスタの抵抗温度
特性を示すグラフFIG. 4 is a graph showing resistance temperature characteristics of the organic positive temperature coefficient thermistor of Example 2.
【図５】実施例３の有機質正特性サーミスタの抵抗温度
特性を示すグラフFIG. 5 is a graph showing resistance-temperature characteristics of the organic positive temperature coefficient thermistor of Example 3.
【図６】実施例４の有機質正特性サーミスタの抵抗温度
特性を示すグラフFIG. 6 is a graph showing resistance temperature characteristics of the organic positive temperature coefficient thermistor of Example 4.
【図７】実施例５の有機質正特性サーミスタの抵抗温度
特性を示すグラフFIG. 7 is a graph showing resistance temperature characteristics of the organic positive temperature coefficient thermistor of Example 5.
【図８】実施例６の有機質正特性サーミスタの抵抗温度
特性を示すグラフFIG. 8 is a graph showing resistance temperature characteristics of the organic positive temperature coefficient thermistor of Example 6.
【図９】比較例１の有機質正特性サーミスタの抵抗温度
特性を示すグラフFIG. 9 is a graph showing resistance-temperature characteristics of the organic positive temperature coefficient thermistor of Comparative Example 1.
【図１０】比較例２の有機質正特性サーミスタの抵抗温
度特性を示すグラフFIG. 10 is a graph showing the resistance temperature characteristics of the organic positive temperature coefficient thermistor of Comparative Example 2.
Claims (2)
填剤としての導電性粒子を含む有機質正特性サーミスタ
において、 前記導電性粒子は、多数の突起が形成された球状のＮｉ
パウダー からなることを特徴とする有機質正特性サーミ
スタ。1. A crystalline polymer which is charged as a thermistor body.
Organic positive temperature coefficient thermistor containing conductive particles as filler
In the above, the conductive particles are formed of a spherical Ni on which a large number of protrusions are formed.
An organic positive temperature coefficient thermistor characterized by being made of powder .
填剤としての導電性粒子を含む有機質正特性サーミスタ
において、 前記導電性粒子として多数の突起が形成された球状のＮ
ｉパウダーを有し、該Ｎｉパウダーは鎖状に連結されて
いる ことを特徴とする有機質正特性サーミスタ。2. The crystalline polymer is charged as a thermistor body.
Organic positive temperature coefficient thermistor containing conductive particles as filler
In, N spherical large number of projections as the conductive particles are formed
i powder, wherein the Ni powder is linked in a chain.
Organic PTC thermistor which is characterized in that there.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3225065A JP3022644B2 (en) | 1991-08-09 | 1991-08-09 | Organic positive temperature coefficient thermistor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3225065A JP3022644B2 (en) | 1991-08-09 | 1991-08-09 | Organic positive temperature coefficient thermistor |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31754299A Division JP2000133503A (en) | 1999-11-08 | 1999-11-08 | Manufacture of organic positive temperature coefficient thermistor |
| JP11317540A Division JP2000133502A (en) | 1999-11-08 | 1999-11-08 | Organic positive temperature coefficient thermistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0547503A JPH0547503A (en) | 1993-02-26 |
| JP3022644B2 true JP3022644B2 (en) | 2000-03-21 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TW298653B (en) * | 1995-02-28 | 1997-02-21 | Yunichica Kk | |
| US5982271A (en) * | 1996-11-28 | 1999-11-09 | Tdk Corporation | Organic positive temperature coefficient thermistor |
| JP3701113B2 (en) * | 1997-12-04 | 2005-09-28 | Ｔｄｋ株式会社 | Organic positive temperature coefficient thermistor |
| JP3911345B2 (en) * | 1998-06-18 | 2007-05-09 | Ｔｄｋ株式会社 | Organic positive temperature coefficient thermistor |
| US6143206A (en) * | 1998-06-24 | 2000-11-07 | Tdk Corporation | Organic positive temperature coefficient thermistor and manufacturing method therefor |
| US6299801B1 (en) | 1998-11-02 | 2001-10-09 | Tdk Corporation | Organic positive temperature coefficient thermistor |
| JP3683113B2 (en) * | 1998-11-02 | 2005-08-17 | Ｔｄｋ株式会社 | Organic positive temperature coefficient thermistor |
| KR200287112Y1 (en) | 1999-05-25 | 2002-08-30 | 동아연필 주식회사 | Ball pressure structure of knock style tip for property of water ball pen |
| EP1058277B1 (en) * | 1999-06-02 | 2006-08-09 | TDK Corporation | Organic positive temperature coefficient thermistor |
| JP3896232B2 (en) | 1999-10-01 | 2007-03-22 | Ｔｄｋ株式会社 | Organic positive temperature coefficient thermistor and manufacturing method thereof |
| TWI267530B (en) * | 2001-11-15 | 2006-12-01 | Tdk Corp | Organic PTC thermistor and making method |
| JP3914899B2 (en) | 2002-06-24 | 2007-05-16 | Ｔｄｋ株式会社 | PTC thermistor body, PTC thermistor, method for manufacturing PTC thermistor body, and method for manufacturing PTC thermistor |
| WO2004080497A1 (en) | 2003-03-10 | 2004-09-23 | Mitsubishi Paper Mills Limited | Heat regenerative deodorizing filter |
| JP4734593B2 (en) | 2004-06-08 | 2011-07-27 | タイコエレクトロニクスジャパン合同会社 | Polymer PTC element |
| CN112242520A (en) * | 2019-07-17 | 2021-01-19 | 珠海冠宇电池股份有限公司 | PTC material of graphene microsphere based on multi-branch structure and preparation method and application thereof |
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