JP3021563B2 - Solid-state imaging device - Google Patents
Solid-state imaging deviceInfo
- Publication number
- JP3021563B2 JP3021563B2 JP2188223A JP18822390A JP3021563B2 JP 3021563 B2 JP3021563 B2 JP 3021563B2 JP 2188223 A JP2188223 A JP 2188223A JP 18822390 A JP18822390 A JP 18822390A JP 3021563 B2 JP3021563 B2 JP 3021563B2
- Authority
- JP
- Japan
- Prior art keywords
- bonding pad
- solid
- film
- imaging device
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05556—Shape in side view
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05556—Shape in side view
- H01L2224/05558—Shape in side view conformal layer on a patterned surface
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05624—Aluminium [Al] as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4807—Shape of bonding interfaces, e.g. interlocking features
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4845—Details of ball bonds
- H01L2224/48451—Shape
- H01L2224/48453—Shape of the interface with the bonding area
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
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- H01L2924/01004—Beryllium [Be]
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- H01L2924/301—Electrical effects
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Wire Bonding (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、例えばCCD撮像デバイスで構成された撮像
部上に色フィルタが形成されたカラー撮像方式の固体撮
像素子に関する。Description: TECHNICAL FIELD The present invention relates to a color imaging type solid-state imaging device in which a color filter is formed on an imaging unit constituted by, for example, a CCD imaging device.
本発明は、撮像部上に直接色フィルタ或はレンズが形
成され、該撮像部周辺の基板上に絶縁膜を介して外部端
子と電気的に接続されるボンディングパッドが形成さ
れ、このボンディングパッドに探針を当てて行う検査後
に、エッチング工程を経てボンディングパッドと外部端
子が電気的に接続されてなる固体撮像素子であって、上
記ボンディングパッドと上記絶縁膜の間に、この絶縁膜
に対するエッチングを阻止するための下地膜を形成して
構成することにより、検査後に行なわれる色フィルタの
再生処理やレンズ形成等のウハエ・プロセスにおけるボ
ンディングパッドと基板間の不測の短絡現象を防止し
て、固体撮像素子自体の高信頼性化を図れるようにした
ものである。According to the present invention, a color filter or a lens is formed directly on an image pickup unit, and a bonding pad electrically connected to an external terminal via an insulating film is formed on a substrate around the image pickup unit. A solid-state imaging device in which a bonding pad and an external terminal are electrically connected through an etching process after an inspection performed by applying a probe, and the insulating film is etched between the bonding pad and the insulating film. By forming a base film for prevention, it is possible to prevent an unexpected short-circuit phenomenon between the bonding pad and the substrate in the flies process such as color filter regeneration processing and lens formation performed after inspection, and solid-state imaging. This is to improve the reliability of the element itself.
従来の白黒撮像方式による固体撮像素子は、第２図に
示すように、例えばCCD撮像デバイスを代表例として説
明すると、基板（21）の中央部分に、絵素となる複数の
受光部（22）と、これら受光部（22）に隣接して夫々多
結晶シリコン層からなる転送電極（23）とAl等からなる
遮光層（24）とを有してなる転送部（25）で構成された
撮像部（26）を有すると共に、該撮像部（26）を含む全
面に平坦化膜（27）及びオーバーコート膜（28）が順次
積層され、更に、上記撮像部（26）周辺の基板（21）上
にSiO2膜（29）を介してAl等によるボンディングパッド
（30）が形成されてなる。尚、このボンディングパッド
（30）には、外部端子（図示せず）と電気的に接続する
ためのワイヤ（31）が窓（32）を介して接続される。As shown in FIG. 2, a conventional solid-state imaging device based on a black-and-white imaging method will be described with a CCD imaging device as a representative example. And a transfer section (25) having a transfer electrode (23) made of a polycrystalline silicon layer and a light-shielding layer (24) made of Al or the like adjacent to the light receiving section (22). A planarizing film (27) and an overcoat film (28) are sequentially laminated on the entire surface including the imaging unit (26), and further, a substrate (21) around the imaging unit (26). A bonding pad (30) made of Al or the like is formed thereon via an SiO 2 film (29). A wire (31) for electrically connecting to an external terminal (not shown) is connected to the bonding pad (30) through a window (32).
また、最近では、固体撮像素子のカラー化が進めら
れ、デバイス（22）上に直接色フィルタを設けたり、色
フィルタを貼り合せにより設けるようにしている。Recently, colorization of solid-state imaging devices has been promoted, and color filters are directly provided on the device (22), or color filters are provided by bonding.
一般に、固体撮像素子の形成過程において検査が行な
われる。この検査は、ボンディングパッドの探針を当て
て行なうわけだが、このとき、ボンディングパッドに探
針による針跡（傷）が残る。この針跡は、上記第２図に
示す白黒撮像方式の固体撮像素子やカラー撮像方式にお
ける色フィルタの貼り合わせタイプのものにおいては、
ほとんど問題にならないが、撮像部（26）上に直接色フ
ィルタを設けるタイプのものでは、以下のような不都合
が生じる。Generally, inspection is performed in the process of forming a solid-state imaging device. This inspection is performed by applying the probe of the bonding pad. At this time, a needle mark (scratch) due to the probe remains on the bonding pad. This needle mark is a black-and-white image pickup type solid-state image pickup device shown in FIG.
Although there is almost no problem, the following inconvenience occurs in a type in which a color filter is provided directly on the imaging unit (26).
即ち、撮像部（26）上に直接色フィルタを設ける所謂
オン・ウェハ方式では、上記検査後にもウェハ・プロセ
スが行なわれる場合がある。That is, in a so-called on-wafer method in which a color filter is provided directly on the imaging unit (26), a wafer process may be performed even after the above inspection.
このプロセスは、例えば色フィルタの位置ずれ等に伴
う色フィルタの再生処理や固体撮像素子の高感度化のた
めに行なわれる色フィルタ上への有機膜によるレンズの
形成等である。また、この他、色フィルタ形成前に検査
を行ない、その後色フィルタを形成するケースもある。This process includes, for example, a reproduction process of the color filter due to a displacement of the color filter and the like, and a formation of a lens with an organic film on the color filter performed for increasing the sensitivity of the solid-state imaging device. In addition, there is a case where an inspection is performed before forming a color filter, and then a color filter is formed.
次に、一例としてレンズを形成する場合の一連の工程
を説明すると、まず第３図Ａに示すように、ボンディン
グパッド（30）を含む前面に平坦化膜（27）を形成した
のち、撮像部（26）上に色フィルタ（33）を形成する。
その後、全面にオーバーコート膜（28）を形成したの
ち、ボンディングパッド（30）に対応する部分のオーバ
ーコート膜（28）と平坦化膜（27）をエッチング除去し
てボンディングパッド（30）を露出させる。そして、こ
の後に検査が行なわれる。Next, a series of steps for forming a lens will be described as an example. First, as shown in FIG. 3A, a flattening film (27) is formed on a front surface including a bonding pad (30), and then an imaging unit is formed. (26) A color filter (33) is formed thereon.
Then, after forming an overcoat film (28) on the entire surface, the overcoat film (28) and the flattening film (27) corresponding to the bonding pad (30) are removed by etching to expose the bonding pad (30). Let it. Then, the inspection is performed after this.
その後、第３図Ｂに示すように、検査終了後、オーバ
ーコート膜（28）の撮像部（26）と対応する部分に有機
膜によるレンズ（34）をパターニングにより形成したの
ち、オーバーコート膜（28）を二点鎖線で示す位置まで
エッチバックとして撮像部（26）上にレンズ（34）を構
成するというものである。Thereafter, as shown in FIG. 3B, after the inspection is completed, a lens (34) made of an organic film is formed by patterning on a portion of the overcoat film (28) corresponding to the imaging section (26), and then the overcoat film (28) is formed. The lens (34) is formed on the imaging unit (26) as an etch back to the position indicated by the two-dot chain line in (28).
そして、上記検査時において、ボンディングパッド
（30）に探針による針跡（ａ）がついて、ボンディング
パッド（30）下層のSiO2膜（29）が露出している場合、
第３図Ｂで示すオーバーコート膜（28）に対するエッチ
バック時に、露出しているSiO2膜（29）もエッチング除
去されるという現象が生じる。これは、第３図Ａで示す
ボンディングパッド（30）に対する窓開け並びに第３図
Ｂで示すエッチバック時、O2−プラズマ等のドライエッ
チング方式でエッチングするという方法が用いられてい
る場合があり、このドライエッチング時にプラズマ装置
のチェンバー内にテフロン等のようにＦ（フッ素）元素
を含むものが存在すると、このＦ元素がプラズマ等でた
たき出され、プラズマ装置内がO2とＦの混合雰囲気にな
る。このO2とＦの混合ガスの場合、通常SiO2膜はエッチ
ングされるため、上記のように、ボンディングパッド
（30）からSiO2膜（29）が露出していた場合、その露出
部分においてSiO2膜（29）がエッチング除去されること
になる。At the time of the above inspection, when the bonding pad (30) has a needle mark (a) formed by a probe and the SiO 2 film (29) under the bonding pad (30) is exposed,
At the time of etching back the overcoat film (28) shown in FIG. 3B, a phenomenon occurs in which the exposed SiO 2 film (29) is also etched away. In this case, a method of opening a window with respect to the bonding pad (30) shown in FIG. 3A and performing etching by a dry etching method such as O 2 -plasma at the time of etch back shown in FIG. 3B may be used. If a chamber containing a F (fluorine) element, such as Teflon, exists in the chamber of the plasma apparatus at the time of the dry etching, the F element is knocked out by plasma or the like, and the mixed atmosphere of O 2 and F is formed in the plasma apparatus. become. In the case of this mixed gas of O 2 and F, the SiO 2 film is usually etched. Therefore, as described above, when the SiO 2 film (29) is exposed from the bonding pad (30), the SiO 2 film is exposed at the exposed portion. The two films (29) are removed by etching.
そして、このSiO2膜（29）のエッチング除去によっ
て、基板（21）が露出し、この状態でボンディングパッ
ド（30）に対しワイヤボンディング処理を行なうと、第
４図に示すように、ワイヤ（31）を導線として外部端子
（図示せず）と基板（21）が短絡してしまうという不都
合が生じ、固体撮像素子の信頼性を著しく損なう。Then, the substrate (21) is exposed by the etching and removal of the SiO 2 film (29). When wire bonding is performed on the bonding pad (30) in this state, as shown in FIG. ) Is used as a conducting wire to cause a short circuit between an external terminal (not shown) and the substrate (21), which significantly impairs the reliability of the solid-state imaging device.
そこで、ボンディングパッド（30）に対する窓開け等
で使用されるプラズマ装置のチェンバー内からＦ元素を
含むもの（例えばテフロン）を取り除くことにより、上
記SiO2膜（29）の不測のエッチング除去を防止するとい
う方法が考えられるが、Ｆ元素はボンディングパッド
（30）に対する窓開けに必要なときもあり、即ち混合ガ
スとして使う場合があるため、常に使える技術ではな
い。Therefore, by removing a substance containing F element (for example, Teflon) from a chamber of a plasma apparatus used for opening a window on the bonding pad (30) or the like, accidental removal of the SiO 2 film (29) by etching is prevented. However, the element F is sometimes necessary to open a window for the bonding pad (30), that is, it is used as a mixed gas, so that it is not a technique that can always be used.
本発明は、このような点に鑑み成されたもので、その
目的とするところは、検査後に行なわれる色フィルタの
再生処理やレンズ形成等のウェハ・プロセスにおけるボ
ンディングパッドと基板間の不測の短絡現象が防止で
き、素子自体の高信頼性化を図ることができる固体撮像
素子を提供することにある。The present invention has been made in view of such a point, and an object of the present invention is to provide an unexpected short circuit between a bonding pad and a substrate in a wafer process such as a color filter regeneration process or a lens formation performed after inspection. An object of the present invention is to provide a solid-state imaging device capable of preventing a phenomenon and achieving high reliability of the device itself.
本発明は、撮像部（２）上に直接色フィルタ（11）が
形成され、この撮像部（２）周辺の基板（１）上に絶縁
膜（３）を介して外部端子と電気的に接続されるボンデ
ィングパッド（５）が形成され、このボンディングパッ
ド（５）に探針を当てて行う検査後に、エッチング工程
を経て、ボンディングパッドと外部端子が電気的に接続
されてなる固体撮像素子（Ａ）であって、上記ボンディ
ングパッド（５）と絶縁膜（３）の間に、絶縁膜（３）
に対するエッチングを防ぐための下地膜（４）を形成し
て構成する。According to the present invention, a color filter (11) is formed directly on an imaging unit (2), and electrically connected to external terminals via an insulating film (3) on a substrate (1) around the imaging unit (2). A bonding pad (5) to be formed is formed. After an inspection performed by applying a probe to the bonding pad (5), a solid-state imaging device (A) in which the bonding pad and an external terminal are electrically connected through an etching process is provided. ), Wherein an insulating film (3) is provided between the bonding pad (5) and the insulating film (3).
Is formed by forming a base film (4) for preventing etching of the substrate.
本発明は、撮像部（２）上に直接レンズ（15）が形成
され、この撮像部（２）周辺の基板（１）上に絶縁膜
（３）を介して外部端子と電気的に接続されるボンディ
ングパッド（５）が形成され、このボンディングパッド
（５）に探針を当てて行なう検査後に、エッチング工程
を経て、ボンディングパッドと外部端子が電気的に接続
されてなる固体撮像素子（Ａ）において、上記ボンディ
ングパッド（５）と絶縁膜（３）の間に、絶縁膜（３）
に対するエッチングを防ぐための下地膜（４）を形成し
て構成する。According to the present invention, a lens (15) is formed directly on an imaging unit (2), and is electrically connected to an external terminal via an insulating film (3) on a substrate (1) around the imaging unit (2). A solid-state image pickup device (A) in which a bonding pad (5) is formed, and an inspection is performed by applying a probe to the bonding pad (5), and after the etching step, the bonding pad and an external terminal are electrically connected. The insulating film (3) between the bonding pad (5) and the insulating film (3);
Is formed by forming a base film (4) for preventing etching of the substrate.
上述の本発明の構成によれば、ボンディングパッド
（５）下の下地膜（４）を設けるようにしたので、検査
によって生じたボンディングパッド（５）の探針による
針跡（ａ）を通して下層の絶縁膜（３）が露出するとい
うことがなくなるため、検査後に行なわれる色フィルタ
の再生処理やレンズ形成等のウェハ・プロセスの際に絶
縁膜（３）がエッチング除去されるという現象は生じな
くなり、ボンディングパッド（５）と基板（１）間の短
絡現象を事前に防止することができる。このことは、固
体撮像素子（Ａ）自体の信頼性の向上につながる。According to the configuration of the present invention described above, since the base film (4) under the bonding pad (5) is provided, the lower layer is formed through the probe mark (a) of the bonding pad (5) generated by the inspection. Since the insulating film (3) is not exposed, the phenomenon that the insulating film (3) is removed by etching during a wafer process such as a color filter regeneration process or a lens formation performed after the inspection does not occur. A short circuit phenomenon between the bonding pad (5) and the substrate (1) can be prevented in advance. This leads to an improvement in the reliability of the solid-state imaging device (A) itself.
以下、第１図を参照しながら本発明の実施例を説明す
る。Hereinafter, an embodiment of the present invention will be described with reference to FIG.
第１図は、本実施例に係る特にCCD撮像デバイスを用
いたカラー撮像方式の固体撮像素子（Ａ）を示す要部の
断面図である。FIG. 1 is a cross-sectional view of a main part showing a solid-state image pickup device (A) of a color image pickup system using a CCD image pickup device according to the present embodiment.
この固体撮像素子（Ａ）は、基板（１）の中央部分に
撮像部（２）を有し、該撮像部（２）周辺の基板（１）
上にSiO2膜（３）と比較的膜厚の厚い多結晶シリコン層
（４）が順次積層され、該多結晶シリコン層（４）上に
Al等からなるボンディングパッド（５）が形成されてな
る。This solid-state imaging device (A) has an imaging unit (2) in the center of a substrate (1), and a substrate (1) around the imaging unit (2).
An SiO 2 film (3) and a relatively thick polycrystalline silicon layer (4) are sequentially laminated thereon, and the polycrystalline silicon layer (4) is formed on the polycrystalline silicon layer (4).
A bonding pad (5) made of Al or the like is formed.
第１図に示す撮像部（２）は、特に受光面を示すもの
で、絵素となる複数の受光部（６）と、これら受光部
（６）に隣接して夫々多結晶シリコン層からなる転送電
極（７）とAl等からなる遮光層（８）を有してなる転送
部（９）で構成される。この転送部（９）は、転送電極
（７）に供給される２相又は３相のクロック電圧によっ
て受光部（６）に蓄積された電荷を順次一方向に転送す
るものである。The imaging section (2) shown in FIG. 1 particularly shows a light receiving surface, and is composed of a plurality of light receiving sections (6) serving as picture elements and a polycrystalline silicon layer adjacent to the light receiving sections (6). It comprises a transfer section (9) having a transfer electrode (7) and a light-shielding layer (8) made of Al or the like. The transfer section (9) is for sequentially transferring charges accumulated in the light receiving section (6) in one direction by a two-phase or three-phase clock voltage supplied to the transfer electrode (7).
そして、上記撮像部（２）を含む全面に有機物質から
なる平坦化膜（10）が形成され、該平坦化膜（10）上の
撮像部（２）と対応する部分に、各受光部（６）に対向
して有機物質（例えば、ガゼイン、ゼラチン等）の染色
層を用いた色フィルタ（11）が形成され、更に、全面に
有機物質からなるオーバーコート膜（12）が積層され
る。特に、ボンディングパッド（５）上には外部端子
（図示せず）と電気的に接続されるワイヤ（13）が形成
されるように、窓（14）が開口される。Then, a flattening film (10) made of an organic material is formed on the entire surface including the imaging unit (2), and each light receiving unit () is formed on a portion of the flattening film (10) corresponding to the imaging unit (2). A color filter (11) using a dyed layer of an organic substance (eg, casein, gelatin, etc.) is formed to face 6), and an overcoat film (12) made of an organic substance is laminated on the entire surface. In particular, a window (14) is opened on the bonding pad (5) such that a wire (13) electrically connected to an external terminal (not shown) is formed.
上記多結晶シリコン層（４）は、例えば撮像部（２）
の転送電極（比較的膜厚の厚い多結晶シリコン層で構成
される）（７）の形成時に同時に形成することができる
ため、多結晶シリコン層（４）の形成に関し、特別に工
程を増やす必要がない。また、多結晶シリコン層（４）
とボンディングパッド（５）間に絶縁膜が介在する場合
は、多結晶シリコン層（４）のチャージアップ対策とし
て、多結晶シリコン層（４）とボンディングパッド
（５）間にコンタクトを取ることが好ましい。The polycrystalline silicon layer (4) may be, for example, an imaging unit (2)
Can be formed at the same time as the formation of the transfer electrode (comprising a relatively thick polycrystalline silicon layer) (7), so it is necessary to increase the number of special steps for forming the polycrystalline silicon layer (4). There is no. Also, a polycrystalline silicon layer (4)
When an insulating film is interposed between the polysilicon layer (4) and the bonding pad (5), it is preferable to make a contact between the polysilicon layer (4) and the bonding pad (5) as a measure for charging up the polysilicon layer (4). .
上述の如く、本例によれば、ボンディングパッド
（５）下に多結晶シリコン層（４）を形成するようにし
たので、固体撮像素子（Ａ）の形成過程における検査時
において、ボンディングパッド（５）に検査用の探針に
よって針跡（ａ）が残ったとしても、ボンディングパッ
ド（５）下に多結晶シリコン層（４）があるため、針跡
（ａ）を通してSiO2膜（３）が露出するということがな
い。従って、検査後における色フィルタ（11）の位置ず
れ等に伴う色フィルタ（11）の再生処理や、第１図で示
すように、撮像部（２）上に高感度化のためのレンズ
（15）を形成する場合、即ちオーバーコート膜（12）上
に、フォトレジスト膜をパターニング及び加熱溶融とし
てとレンズ状のパターン（16）を形成したのち（二点鎖
線で示す）、オーバーコート膜（12）を実線で示す位置
までエッチバッグした際、上記再生処理におけるエッチ
ングやこのエッチバックで使用されるドライエッチング
方式における混合ガス中にＦ（フッ素）元素が存在して
いたとしても、針跡（ａ）を通して多結晶シリコン層
（４）がわずかにエッチングされるのみで、下層のSiO2
膜（３）がエッチング除去されることがない。このこと
は、色フィルタ（11）の形成前に検査を行ない、その検
査後に色フィルタ（11）を形成する場合においても同様
である。As described above, according to the present embodiment, since the polycrystalline silicon layer (4) is formed under the bonding pad (5), the bonding pad (5) is formed during the inspection in the process of forming the solid-state imaging device (A). Even if a needle mark (a) remains due to the inspection probe in (1), since the polycrystalline silicon layer (4) is present under the bonding pad (5), the SiO 2 film (3) passes through the needle mark (a). There is no exposure. Therefore, a reproduction process of the color filter (11) due to a displacement or the like of the color filter (11) after the inspection or a lens (15) for increasing the sensitivity on the imaging unit (2) as shown in FIG. ), That is, after forming a lens-like pattern (16) on the overcoat film (12) by patterning and heating and melting it (indicated by a two-dot chain line), the overcoat film (12) is formed. ) To the position shown by the solid line, even if the F (fluorine) element is present in the mixed gas in the etching in the above-mentioned regenerating process or in the dry etching method used in this etching back, the needle marks (a) ), The polycrystalline silicon layer (4) is only slightly etched, and the underlying SiO 2
The film (3) is not removed by etching. The same applies to the case where the inspection is performed before the formation of the color filter (11) and the color filter (11) is formed after the inspection.
従って、その後のワイヤボンディング処理でボンディ
ングパッド（５）上にワイヤ（13）を形成した際、ボン
ディングパッド（５）と基板（１）がワイヤ（13）を介
して短絡するという現象がなくなり、固体撮像素子
（Ａ）自体の高信頼性化を図ることが可能となる。Therefore, when the wire (13) is formed on the bonding pad (5) in the subsequent wire bonding process, the phenomenon that the bonding pad (5) and the substrate (1) are short-circuited via the wire (13) is eliminated, and It is possible to improve the reliability of the imaging element (A) itself.
上記実施例では、ボンディングパッド（５）下に多結
晶シリコン層（４）を形成するようにしたが、これに限
定されるものではなく、O2とＦによるプラズマエッチン
グに対して選択比が高く、ウェハ・プロセス内で使用さ
れる膜であればいずれでもよい。In the above embodiment, the polycrystalline silicon layer (4) is formed under the bonding pad (5). However, the present invention is not limited to this, and the selectivity is high with respect to plasma etching using O 2 and F. Any film can be used as long as it is used in a wafer process.
また、上記実施例では、CCD撮像デバイスによる固体
撮像素子（Ａ）に適用した例を示したが、その他MOS撮
像デバイスによる固体撮像素子にも適用可能である。In the above embodiment, an example in which the present invention is applied to the solid-state imaging device (A) using a CCD imaging device has been described. However, the present invention is also applicable to a solid-state imaging device using a MOS imaging device.
本発明に係る固体撮像素子によれば、検査後に行なわ
れる色フィルタの再生処理やレンズ形成等のウェハ・プ
ロセスにおけるボンディングパッドと基板間の不測の短
絡現象を事前に防止することができ、固体撮像素子自体
の高信頼性化を図ることができる。ADVANTAGE OF THE INVENTION According to the solid-state imaging device which concerns on this invention, the unexpected short-circuit phenomenon between a bonding pad and a board | substrate in the wafer process, such as reproduction | regeneration processing of a color filter performed after an inspection and lens formation, can be prevented beforehand. The reliability of the element itself can be improved.
第１図は本実施例に係るカラー撮像方式の固体撮像素子
を示す要部の断面図、第２図は従来例に係る白黒撮像方
式の固体撮像素子を示す要部の断面図、第３図は他の従
来例に係るカラー撮像方式の固体撮像素子の製法を示す
工程図、第４図はその作用を示す要部の断面図である。 （Ａ）は固体撮像素子、（１）は基板、（２）は撮像
部、（３）はSiO2膜、（４）は多結晶シリコン層、
（５）はボンディングパッド、（６）は受光部、（７）
は転送電極、（９）は転送部、（10）は平坦化膜、（1
1）は色フィルタ、（12）はオーバーコート膜、（13）
はワイヤ、（15）はレンズ、（ａ）は針跡である。FIG. 1 is a cross-sectional view of a main part showing a solid-state imaging device of a color imaging system according to the present embodiment. FIG. Is a process diagram showing a method of manufacturing a color imaging type solid-state imaging device according to another conventional example, and FIG. 4 is a cross-sectional view of a main part showing the operation thereof. (A) is a solid-state imaging device, (1) is a substrate, (2) is an imaging unit, (3) is a SiO 2 film, (4) is a polycrystalline silicon layer,
(5) is a bonding pad, (6) is a light receiving section, (7)
Is a transfer electrode, (9) is a transfer section, (10) is a planarization film, (1)
1) is a color filter, (12) is an overcoat film, (13)
Is a wire, (15) is a lens, and (a) is a needle mark.
フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 27/14 H01L 21/60 301 Continuation of the front page (58) Field surveyed (Int.Cl. 7 , DB name) H01L 27/14 H01L 21/60 301
Claims (2)
撮像部周辺の基板上に絶縁膜を介して外部端子と電気的
に接続されるボンディングパッドが形成され、該ボンデ
ィングパッドに探針を当てて行う検査後に、エッチング
工程を経て、上記ボンディングパッドと上記外部端子が
電気的に接続されてなる固体撮像素子であって、 上記ボンディングパッドと上記絶縁膜の間に、上記絶縁
膜に対するエッチングを防ぐための下地膜を形成してな
る固体撮像素子。1. A color filter is formed directly on an imaging section, a bonding pad electrically connected to an external terminal via an insulating film is formed on a substrate around the imaging section, and a probe is provided on the bonding pad. A solid-state imaging device in which the bonding pad and the external terminal are electrically connected to each other through an etching process after an inspection performed by applying the etching to the insulating film between the bonding pad and the insulating film. Solid-state image sensor formed with a base film for preventing the occurrence of a problem.
部周辺の基板上に絶縁膜を介して外部端子と電気的に接
続されるボンディングパッドが形成され、該ボンディン
グパッドに探針を当てて行う検査後に、エッチング工程
を経て、上記ボンディングパッドと上記外部端子が電気
的に接続されてなる固体撮像素子であって、 上記ボンディングパッドと上記絶縁膜の間に、上記絶縁
膜に対するエッチングを防ぐための下地膜を形成してな
る固体撮像素子。2. A lens is formed directly on the image pickup unit, a bonding pad electrically connected to an external terminal via an insulating film is formed on a substrate around the image pickup unit, and a probe is connected to the bonding pad. After the inspection to be performed, the solid-state imaging device in which the bonding pad and the external terminal are electrically connected to each other through an etching process, wherein the etching of the insulating film is performed between the bonding pad and the insulating film. A solid-state image sensor formed with a base film for prevention.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2188223A JP3021563B2 (en) | 1990-07-17 | 1990-07-17 | Solid-state imaging device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2188223A JP3021563B2 (en) | 1990-07-17 | 1990-07-17 | Solid-state imaging device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0474468A JPH0474468A (en) | 1992-03-09 |
| JP3021563B2 true JP3021563B2 (en) | 2000-03-15 |
Family
ID=16219931
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2188223A Expired - Lifetime JP3021563B2 (en) | 1990-07-17 | 1990-07-17 | Solid-state imaging device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3021563B2 (en) |
-
1990
- 1990-07-17 JP JP2188223A patent/JP3021563B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0474468A (en) | 1992-03-09 |
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