JPH0595097A - Solid state imaging device - Google Patents
Solid state imaging deviceInfo
- Publication number
- JPH0595097A JPH0595097A JP3253932A JP25393291A JPH0595097A JP H0595097 A JPH0595097 A JP H0595097A JP 3253932 A JP3253932 A JP 3253932A JP 25393291 A JP25393291 A JP 25393291A JP H0595097 A JPH0595097 A JP H0595097A
- Authority
- JP
- Japan
- Prior art keywords
- bonding pad
- color filter
- opening
- film
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/03—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
- H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
- H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
- H01L2224/02165—Reinforcing structures
- H01L2224/02166—Collar structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05556—Shape in side view
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、固体撮像装置に関し、
より詳しくは、オンチップ方式のカラーフィルターを有
する固体撮像装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state image pickup device,
More specifically, it relates to a solid-state imaging device having an on-chip color filter.
【0002】[0002]
【従来の技術】固体撮像素子におけるオンチップ式のカ
ラーフィルターは、例えば図3に示すように、3色のフ
ィルター膜31〜33が色毎に層を変えて形成され、ま
た、フィルター膜31〜33の間にはSOGよりなる層
間膜34,35が形成され、最上層にはSOGよりなる
保護膜36が積層された構造となっている。2. Description of the Related Art In an on-chip type color filter for a solid-state image pickup device, for example, as shown in FIG. 3, three color filter films 31 to 33 are formed by changing layers for each color. Interlayer films 34 and 35 made of SOG are formed between 33, and a protective film 36 made of SOG is laminated on the uppermost layer.
【0003】そして、カラーフィルター30の下にある
ボンディングパッド37を表出する場合には、次のよう
な工程を経る。即ち、図3(a) に示すように、保護膜3
6の上にフォトレジスト38を塗布し、これを露光、現
像してボンディングパッド37の上方に窓39を設け
る。When exposing the bonding pad 37 under the color filter 30, the following steps are performed. That is, as shown in FIG.
Photoresist 38 is applied on 6 and exposed and developed to form window 39 above bonding pad 37.
【0004】ついで、フォトレジスト38をマスクにし
て窓39から露出した保護膜36、層間膜34,35を
順次エッチングし、続けてボンディングパッド37を覆
っている層間絶縁膜40をエッチングすると、これによ
りボンディングパッド37の上に開口部41が形成され
る(図3(b))。Then, the protective film 36 and the interlayer films 34 and 35 exposed from the window 39 are sequentially etched using the photoresist 38 as a mask, and then the interlayer insulating film 40 covering the bonding pad 37 is etched. An opening 41 is formed on the bonding pad 37 (FIG. 3 (b)).
【0005】[0005]
【発明が解決しようとする課題】しかし、カラーフィル
ター30の層間膜34,35、保護膜36は、カラーの
色調を整えるためにそれぞれ適度な厚さが必要であり、
カラーフィルター30全層の厚さは2〜3μmと相当大
きなものになっている。この膜厚はフォトレジスト38
の塗布後の膜厚とほぼ同じであり、層間絶縁膜40を含
めた層をエッチングする際にフォトレジスト38が速く
消滅することもある。これを防止するために、フォトレ
ジスト38の膜厚を常に管理しなければならないという
煩わしさがある。However, the interlayer films 34, 35 and the protective film 36 of the color filter 30 each need to have an appropriate thickness in order to adjust the color tone.
The thickness of all layers of the color filter 30 is as large as 2-3 μm. This film thickness is the photoresist 38
The thickness of the photoresist 38 is almost the same as that after the coating, and the photoresist 38 may disappear quickly when the layers including the interlayer insulating film 40 are etched. In order to prevent this, the film thickness of the photoresist 38 has to be constantly controlled, which is troublesome.
【0006】しかも、層間膜34,35、保護膜36が
厚い場合には、図3(c) に示すように、開口部41から
引出されたボンディングワイヤー32がその縁部に当た
り、ボンディング不良やカラーフィルター損傷の原因と
なる。Moreover, when the interlayer films 34, 35 and the protective film 36 are thick, the bonding wire 32 drawn out from the opening 41 hits the edge portion thereof as shown in FIG. It may cause filter damage.
【0007】これに対して、ボンディングパッド37を
広げてその上の開口部41を200×200μm2 以上
に大きくしてボンディングワイヤー42がカラーフィル
ター30と接触しないような構造を採ることも可能であ
るが、これによりチップサイズが大きくなり、固体撮像
素子を用いたカメラ等が大型化するといった問題が生じ
る。On the other hand, it is possible to widen the bonding pad 37 and enlarge the opening 41 thereabove to 200 × 200 μm 2 or more so that the bonding wire 42 does not come into contact with the color filter 30. However, this causes a problem that the chip size becomes large and a camera or the like using the solid-state image pickup device becomes large in size.
【0008】本発明はこのような問題に鑑みてなされた
ものであって、ボンディングパッドを広げずにボンディ
ングワイヤーとカラーフィルターとの接触を回避できる
半導体装置を提供することを目的とする。The present invention has been made in view of the above problems, and an object thereof is to provide a semiconductor device capable of avoiding contact between a bonding wire and a color filter without expanding the bonding pad.
【0009】[0009]
【課題を解決するための手段】上記した課題は、図1,
2に例示するように、固体撮像素子が形成された基板1
の上に設けられたボンディングパッド4と、前記固体撮
像素子と前記ボンディングパッド4を覆う絶縁膜5と、
前記ボンディングパッド4の上の前記絶縁膜5に形成さ
れた第一の開口部7と、前記絶縁膜5の上に形成された
カラーフィルター8と、前記第一の開口部7及びその周
辺の領域にある前記カラーフィルター8の層間膜9,1
0、保護膜11に形成された第二の開口部12とを有す
ることを特徴とする固体撮像装置により達成する。[Means for Solving the Problems]
As illustrated in 2, a substrate 1 on which a solid-state image sensor is formed
A bonding pad 4 provided on the above, an insulating film 5 covering the solid-state imaging device and the bonding pad 4,
A first opening 7 formed in the insulating film 5 on the bonding pad 4, a color filter 8 formed on the insulating film 5, the first opening 7 and a peripheral region thereof. The interlayer films 9, 1 of the color filter 8
0, and the second opening 12 formed in the protective film 11 is achieved.
【0010】または、前記絶縁膜5と前記カラーフィル
ター8の間に窒化シリコン膜6が形成されていることを
特徴とする前記固体撮像装置によって達成する。Alternatively, it is achieved by the solid-state image pickup device characterized in that a silicon nitride film 6 is formed between the insulating film 5 and the color filter 8.
【0011】[0011]
【作 用】本発明によれば、ボンディングパッド4を覆
う層間絶縁膜5に第一の開口部7を形成する一方、カラ
ーフィルター8のうち第一の開口部7を含む広い領域に
第二の開口部12を形成しているので、第二の開口部1
2はボンディングパッド4の大きさに制限されずに広く
形成される。[Operation] According to the present invention, the first opening 7 is formed in the interlayer insulating film 5 covering the bonding pad 4, while the second opening is formed in a wide area of the color filter 8 including the first opening 7. Since the opening 12 is formed, the second opening 1
The size of the bonding pad 2 is not limited to the size of the bonding pad 4 and is wide.
【0012】このため、ボンディングパッド4に接続さ
れるワイヤーとカラーフィルター8との接触は回避さ
れ、ボンディング不良やフィルタ損傷が生じるなくな
る。しかも、ボンディングパッド4は第二の開口部12
に無関係の大きさに形成され、装置の小型化に支障をき
たすことはない。Therefore, contact between the wire connected to the bonding pad 4 and the color filter 8 is avoided, and defective bonding or filter damage does not occur. Moreover, the bonding pad 4 has the second opening 12
It is formed to have a size unrelated to, and does not hinder the miniaturization of the device.
【0013】また第2の発明において、カラーフィルタ
ー8の下に設けた窒化シリコン膜6は、固体撮像素子の
耐湿性向上用の膜として機能し、特にフィルター膜の主
成分がゼラチンにより形成されている場合には有効であ
る。Further, in the second invention, the silicon nitride film 6 provided under the color filter 8 functions as a film for improving the moisture resistance of the solid-state image pickup device, and the main component of the filter film is formed of gelatin. If it is, it is effective.
【0014】[0014]
【実施例】そこで、以下に本発明の実施例を図面に基づ
いて説明する。図1、2は、本発明の一実施例装置の製
造工程を示す断面図であり、図2(e)は、その装置にワ
イヤーをボンディングした状態を示している。Embodiments of the present invention will be described below with reference to the drawings. 1 and 2 are cross-sectional views showing a manufacturing process of a device according to an embodiment of the present invention, and FIG. 2 (e) shows a state in which a wire is bonded to the device.
【0015】図2(e)において符号1は、シリコン等の
p型半導体基板で、その内部には受光素子2を複数個有
するCCD型の固体撮像素子が形成され、その表面はSi
O2よりなる層間絶縁膜3により覆われている。In FIG. 2 (e), reference numeral 1 is a p-type semiconductor substrate made of silicon or the like, in which a CCD type solid-state image pickup device having a plurality of light receiving elements 2 is formed, and its surface is made of Si.
It is covered with an interlayer insulating film 3 made of O 2 .
【0016】また、半導体基板1の縁部に沿った層間絶
縁膜2の上には、アルミニウムシリコン(AlSi)よりな
るボンディングパッド4が150×150μm2 の大き
さに形成され、その上にはSiO2、PSG等よりなる第二
の層間絶縁膜5が積層され、その表面は窒化シリコン膜
6によって覆われている。A bonding pad 4 made of aluminum silicon (AlSi) having a size of 150 × 150 μm 2 is formed on the interlayer insulating film 2 along the edge of the semiconductor substrate 1, and SiO 2 is formed thereon. 2 , a second interlayer insulating film 5 made of PSG or the like is laminated, and the surface thereof is covered with a silicon nitride film 6.
【0017】ボンディングパッド4の上の層間絶縁膜5
と窒化シリコン膜6にはフォトリソグラフィー法によっ
て120×120μm2 の開口部7が形成されている。
さらに、窒化シリコン膜6の上には、受光素子2に対応
して高分子樹脂材、ゼラチン等よりいなる3色カラーフ
ィルター8が形成されている。このカラーフィルター8
は各色のフィルター膜8R,8G,8B毎に層が相違
し、それらの間にはSOG、高分子樹脂材等よりなる層
間膜9,10が形成され、最上層にはSOG、高分子樹
脂材等よりなる保護膜11が形成されている。それらの
層間膜9,10、保護膜11のうち第一の開口部7の上
とその周辺には、画素領域を浸食しない200×200
μm2 以上の広さの第二の開口部12が形成されてお
り、第二の開口部12と第一の開口部7を通してボンデ
ィングパッド4にボンディングワイヤー13が接続され
る。Interlayer insulating film 5 on the bonding pad 4
An opening 7 of 120 × 120 μm 2 is formed in the silicon nitride film 6 by photolithography.
Further, on the silicon nitride film 6, a three-color color filter 8 made of a polymer resin material, gelatin or the like is formed corresponding to the light receiving element 2. This color filter 8
Have different layers for each color filter film 8R, 8G, 8B, and interlayer films 9 and 10 made of SOG, a polymer resin material or the like are formed between them, and SOG and a polymer resin material are formed on the uppermost layer. A protective film 11 made of, for example, is formed. 200 × 200 which does not corrode the pixel area on and around the first opening 7 of the interlayer films 9 and 10 and the protective film 11.
The second opening 12 having a width of at least μm 2 is formed, and the bonding wire 13 is connected to the bonding pad 4 through the second opening 12 and the first opening 7.
【0018】この実施例において、ボンディングパッド
4を直接覆う層間絶縁膜5、窒化シリコン膜6に第一の
開口部7を形成する一方、カラーフィルター8のうち第
一の開口部7を含む領域に第二の開口部12を形成して
いるので、第二の開口部12はボンディングパッド4の
大きさに制限されずに広く形成できる。このため、ボン
ディンブワイヤー13と保護膜11、層間膜9,10と
の接触は容易に回避され、ボンディング不良が生じるな
くなる。In this embodiment, the first opening 7 is formed in the interlayer insulating film 5 and the silicon nitride film 6 which directly cover the bonding pad 4, while the color filter 8 is formed in the region including the first opening 7. Since the second opening 12 is formed, the second opening 12 can be formed widely without being limited by the size of the bonding pad 4. Therefore, contact between the bond wire 13 and the protective film 11 and the interlayer films 9 and 10 is easily avoided, and no defective bonding occurs.
【0019】この場合の第二の開口部12は、半導体基
板1の外縁に到る大きさであっても支障がない。なお、
カラーフィルター8の下に設けた窒化シリコン膜6は、
固体撮像素子の耐湿性向上用の膜として機能し、特にフ
ィルター膜8R,8B,8Gがゼラチンにより形成され
ている場合には有効である。In this case, the second opening 12 has no problem even if it reaches the outer edge of the semiconductor substrate 1. In addition,
The silicon nitride film 6 provided under the color filter 8 is
It functions as a film for improving the moisture resistance of the solid-state imaging device, and is particularly effective when the filter films 8R, 8B, and 8G are made of gelatin.
【0020】次に、上記した装置の形成工程を説明す
る。まず、図1(a) に示すように、CCD固体撮像素子
が形成されている半導体基板1の上にCVD法によりSi
O2よりなる第一の層間絶縁膜3を形成し、その上に厚さ
1.0μmのAlSi膜を積層し、これをパターニングして半
導体基板1の縁部に沿って150×150μm2 の広さ
のボンディングパッド4を形成する。Next, a process of forming the above-mentioned device will be described. First, as shown in FIG. 1 (a), Si is formed by CVD on a semiconductor substrate 1 on which a CCD solid-state image sensor is formed.
A first interlayer insulating film 3 made of O 2 is formed, an AlSi film having a thickness of 1.0 μm is laminated on the first interlayer insulating film 3, and the AlSi film is patterned to have a width of 150 × 150 μm 2 along the edge of the semiconductor substrate 1. The bonding pad 4 is formed.
【0021】さらに、全体を膜厚0.8μmのSiO2よりな
る第二の層間絶縁膜5によって覆い、この後にCVD法
により窒化シリコン膜6を0.3μmの厚さに成長す
る。このような状態において、まず、フォトレジスト1
5を塗布し、これを露光、現像してボンディングパッド
4の上に大きさ120×120μm2 の窓16を形成す
る。ついで、CHF3とO2を含むガスを使用して窓16から
表出した窒化シリコン膜6と第二の層間絶縁膜5をプラ
ズマエッチングし、これによりボンディングパッド4を
露出する第一の開口部7を形成する(図1(b))。なお、
フォトレジスト15は溶剤により除去する。Further, the whole is covered with a second interlayer insulating film 5 made of SiO 2 having a film thickness of 0.8 μm, and thereafter a silicon nitride film 6 is grown to a thickness of 0.3 μm by the CVD method. In such a state, first, the photoresist 1
5 is applied, and this is exposed and developed to form a window 16 having a size of 120 × 120 μm 2 on the bonding pad 4. Then, the silicon nitride film 6 exposed from the window 16 and the second interlayer insulating film 5 are plasma-etched using a gas containing CHF 3 and O 2 , whereby the first opening portion exposing the bonding pad 4 is formed. 7 is formed (FIG. 1 (b)). In addition,
The photoresist 15 is removed with a solvent.
【0022】この後に、層間膜9,10を介して三色の
フィルター膜8R,8B,8Gを形成し、ついで、SO
Gよりなる保護膜11を積層する。この場合、層間膜
9,10と保護膜11の厚さは0.5μm、各フィルター
膜8R,8B,8Gの膜厚は0.8μmである。After that, three color filter films 8R, 8B and 8G are formed through the interlayer films 9 and 10, and then SO
The protective film 11 made of G is laminated. In this case, the thickness of the interlayer films 9 and 10 and the protective film 11 is 0.5 μm, and the film thickness of each of the filter films 8R, 8B and 8G is 0.8 μm.
【0023】そして、フォトレジスト17を塗布してか
ら、これを露光、現像して第一の開口部7を含み、かつ
画素形成領域を浸食しない範囲で200×200μm2
以上の広さの窓18を形成する(図1(c))。Then, after applying the photoresist 17, this is exposed and developed to include 200 × 200 μm 2 within a range including the first opening 7 and not eroding the pixel forming region.
The window 18 having the above width is formed (FIG. 1 (c)).
【0024】次に、窓18から露出したカラーフィルタ
ー8の層間膜9,10、保護膜11を順次エッチングし
て第二の開口部12を形成する(図2(d))。このエッチ
ングの際に、CHF3とCF4 を含むガスを使用すると、窒化
シリコン膜6とボンディングパッド4がエッチングスト
ッパーとなり、オーバエッチングがなくなる。なお、フ
ォトレジスト17は前記と同様に除去する。Next, the interlayer films 9 and 10 of the color filter 8 exposed from the window 18 and the protective film 11 are sequentially etched to form a second opening 12 (FIG. 2 (d)). If a gas containing CHF 3 and CF 4 is used in this etching, the silicon nitride film 6 and the bonding pad 4 serve as an etching stopper, and overetching is eliminated. The photoresist 17 is removed in the same manner as above.
【0025】この後に、図2(e) に示すように、直径3
0μmのAu合金よりなるワイヤー13を、第一、第二の
開口部7,12を通してボンディングパッド4に熱溶着
し、ここから外部に引き出すことになる。After this, as shown in FIG. 2 (e), the diameter of 3
The wire 13 made of Au alloy of 0 μm is heat-welded to the bonding pad 4 through the first and second openings 7 and 12, and is drawn out from here.
【0026】なお、上記した実施例では窒化シリコン膜
を形成したが、ボンディングワイヤーとカラーフィルタ
ーとの接触を防止するために特に必要な要素ではなく、
これを省略してもよい。Although the silicon nitride film is formed in the above-mentioned embodiment, it is not a necessary element for preventing the contact between the bonding wire and the color filter.
This may be omitted.
【0027】さらに、上記した実施例では第一の開口部
7を形成した後に第二の開口部12をパターニングした
が、これを逆の順で形成することも可能である。Furthermore, in the above-mentioned embodiment, the second opening 12 is patterned after forming the first opening 7, but it is also possible to form this in the reverse order.
【0028】[0028]
【発明の効果】以上述べたように本発明によれば、ボン
ディングパッドを覆う層間絶縁膜に第一の開口部を形成
する一方、カラーフィルターのうち第一の開口部を含む
広い領域に第二の開口部を形成しているので、第二の開
口部はボンディングパッドの大きさに制限されずに広く
形成でき、ボンディングパッドに接続されるワイヤーと
カラーフィルターとの接触は回避され、ボンディング不
良やフィルタ損傷を防止できる。また、ボンディングパ
ッドは第二の開口部に無関係の大きさに形成することが
でき、装置の小型化の障害を除くことができる。As described above, according to the present invention, the first opening is formed in the interlayer insulating film covering the bonding pad, while the second opening is formed in the wide area of the color filter including the first opening. Since the opening is formed, the second opening can be formed widely without being limited to the size of the bonding pad, the contact between the wire connected to the bonding pad and the color filter is avoided, and defective bonding or Filter damage can be prevented. In addition, the bonding pad can be formed to have a size independent of the second opening, which can obstruct the miniaturization of the device.
【0029】また、カラーフィルターの下に窒化シリコ
ン膜を設けているので、固体撮像素子の耐湿性向上を図
ることができる。Further, since the silicon nitride film is provided below the color filter, the moisture resistance of the solid-state image pickup device can be improved.
【図1】本発明の一実施例を示す断面図(その1)であ
る。FIG. 1 is a sectional view (1) showing an embodiment of the present invention.
【図2】本発明の一実施例を示す断面図(その2)であ
る。FIG. 2 is a sectional view (2) showing an embodiment of the present invention.
【図3】従来例を示す断面図である。FIG. 3 is a cross-sectional view showing a conventional example.
1 半導体基板 2 受光素子 3、5 層間絶縁膜 4 ボンディングパッド 6 窒化シリコン膜 7 開口部 8 カラーフィルター 8R,8B,8G フィルター膜 9、10層間膜 11 保護膜 12 開口部 13 ワイヤー DESCRIPTION OF SYMBOLS 1 Semiconductor substrate 2 Light receiving element 3, 5 Interlayer insulating film 4 Bonding pad 6 Silicon nitride film 7 Opening 8 Color filter 8R, 8B, 8G Filter film 9, 10 Interlayer film 11 Protective film 12 Opening 13 Wire
Claims (2)
に設けられたボンディングパッド(4)と、 前記固体撮像素子と前記ボンディングパッド(4)を覆
う絶縁膜(5)と、 前記ボンディングパッド(4)の上の前記絶縁膜(5)
に形成された第一の開口部(7)と、 前記絶縁膜(5)の上に形成されたカラーフィルター
(8)と、 前記第一の開口部(7)及びその周辺の領域にある前記
カラーフィルター(8)の層間膜(9,10)、保護膜
(11)に形成された第二の開口部(12)とを有する
ことを特徴とする固体撮像装置。1. A bonding pad (4) provided on a substrate (1) on which a solid-state imaging device is formed, an insulating film (5) covering the solid-state imaging device and the bonding pad (4), The insulating film (5) on the bonding pad (4)
A first opening portion (7) formed in the first opening portion (7), a color filter (8) formed on the insulating film (5), and the first opening portion (7) and the peripheral region thereof. A solid-state image pickup device comprising: an interlayer film (9, 10) of a color filter (8); and a second opening (12) formed in a protective film (11).
(8)の間に窒化シリコン膜(6)が形成されているこ
とを特徴とする請求項1記載の固体撮像装置。2. The solid-state image pickup device according to claim 1, wherein a silicon nitride film (6) is formed between the insulating film (5) and the color filter (8).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3253932A JPH0595097A (en) | 1991-10-01 | 1991-10-01 | Solid state imaging device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3253932A JPH0595097A (en) | 1991-10-01 | 1991-10-01 | Solid state imaging device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0595097A true JPH0595097A (en) | 1993-04-16 |
Family
ID=17258025
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3253932A Withdrawn JPH0595097A (en) | 1991-10-01 | 1991-10-01 | Solid state imaging device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0595097A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005129952A (en) * | 2003-10-24 | 2005-05-19 | Mangnachip Semiconductor Ltd | Method for manufacturing cmos image sensor |
JP2007118267A (en) * | 2005-10-26 | 2007-05-17 | Toray Ind Inc | Thermoplastic polyester sheet for solar cell |
JP2010109137A (en) * | 2008-10-30 | 2010-05-13 | Sony Corp | Semiconductor device |
-
1991
- 1991-10-01 JP JP3253932A patent/JPH0595097A/en not_active Withdrawn
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005129952A (en) * | 2003-10-24 | 2005-05-19 | Mangnachip Semiconductor Ltd | Method for manufacturing cmos image sensor |
JP2007118267A (en) * | 2005-10-26 | 2007-05-17 | Toray Ind Inc | Thermoplastic polyester sheet for solar cell |
JP2010109137A (en) * | 2008-10-30 | 2010-05-13 | Sony Corp | Semiconductor device |
JP4655137B2 (en) * | 2008-10-30 | 2011-03-23 | ソニー株式会社 | Semiconductor device |
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