JP3010812B2 - Semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device using a tape carrier, and more particularly to a structure of a tape carrier.

[0002]

2. Description of the Related Art In a semiconductor device, generally, a semiconductor element is attached to a die pad provided on a lead frame, and external electrodes of a semiconductor chip are connected to terminals of the lead frame by wires, respectively, which are connected with a thermosetting resin such as epoxy resin. After packaging, each terminal is cut and manufactured.

However, recently, with the miniaturization and thinning of electronic devices, semiconductor devices used therein are also mounted at a high density. Therefore, the appearance of thin and small semiconductor devices with fine leads has been desired. . In order to respond to such a demand, a semiconductor device is arranged in a device hole of a tape carrier, and an electrode of a semiconductor element is directly connected to an inner lead of a lead provided on the tape carrier, and a liquid resin (for example, an epoxy resin) is connected thereto. Semiconductor devices of a type in which a sealing agent made of, for example, is printed, potted, or transferred and packaged have been used.

FIG. 3 is a plan view for explaining a conventional semiconductor device using a tape carrier, and FIG.
FIG. 5 is an explanatory view showing a production example of the semiconductor device. In the figure, 1 is a device hole 2 having an area larger than the surface area of a semiconductor element 6 described later at regular intervals in the length direction.
A tape carrier having a thickness of about 25 to 125 μm provided with 2, 2,... Reference numeral 3 denotes a high-conductivity 25-35 μm-thick width 30 of copper or the like provided on the tape carrier 1.
A large number of leads made of metal foil of about 500 μm, some of which protrude into the device hole 2 and are free ends, form inner leads 3a. Reference numeral 5 denotes a sprocket hole for carrying the tape carrier 1. 6 is a semiconductor element, 6a is a gold convex electrode provided on the semiconductor element 6, 6b is an aluminum wiring of the semiconductor element 6, 6c is an insulating layer covering the aluminum wiring 6b, and 6d is an aluminum wiring 6b and the convex electrode 6a. Chrome intervening between
It is a barrier metal layer made of titanium and platinum that does not deteriorate in strength even when pressed for a long time.

FIG. 5 is an explanatory view showing an example of an apparatus for mounting a semiconductor element on the tape carrier 1 as described above. The semiconductor element 6 mounted on the semiconductor element base 8 is positioned at a predetermined position by a positioning guide 9. Positioned. On the other hand, the tape carrier 1 guided by the tape rail 10 and fed by a sprocket in the vertical direction of the paper surface stops at a position where the device hole 2 reaches the semiconductor element 6 and a large number of protrusions provided on the semiconductor element 6. Electrode 6a and each lead 3
Are aligned with the tips of the inner leads 3a. Then, the bonding tool 11 heated to about 450 to 600 degrees is lowered to press the respective leads 3 and form them to a predetermined angle to fuse the tips of the inner leads 3a to the respective convex electrodes 6a of the semiconductor element 6. Wear and connect. Next, the tape carrier 1 is moved to cut the leads 3 respectively, or the semiconductor element 6 and a part of the leads 3 are sealed with a liquid sealing resin by squeegee printing, potting, transfer or the like, and then the leads 3 are cut. To manufacture a semiconductor device.

[0006]

However, in the conventional semiconductor device as described above, since the device hole 2 larger than the outer dimension of the semiconductor element 6 is provided,
A distance L shown between the edge of the semiconductor element 6 and the edge of the device hole 2 in FIG. Usually this L
Is about 500 to 900 μm, and in the prior art, in order to avoid an edge short between the edge of the semiconductor element 6 and the inner lead 3 a protruding into the device hole 2,
Forming of about 100 to 200 μm is provided. However, since the bonding tool 11 is maintained at a very high temperature, the inner leads 3a are deformed by heat during bonding, and it is extremely difficult to perform stable forming.

Further, in order to avoid an edge short between the edge of the semiconductor element 6 and the inner lead 3a protruding into the device hole 2, a height of about 100 to 200 μm is wasted.

Further, since the inner leads 3a protrude from the device hole 2 by about 600 to 1000 μm and are free ends, there is a high probability that the inner leads 3a will be bent during a plating step or the like at the time of manufacturing a tape carrier, and the yield is high. It is one of the causes that does not improve.

The present invention has been made to solve the above problems, and has as its object to reduce the weight and density of a semiconductor device, stabilize forming, and improve the yield of a tape carrier.

[0010]

According to the present invention, there is provided a semiconductor device comprising:
A tape carrier having an insulating and flexible base material having a device hole formed therein, a lead provided from above the base material to the inside of the device hole, and the tape carrier located in the device hole. A semiconductor element joined to a lead and electrically connected to the lead, wherein the device hole has a shape smaller than an outer peripheral shape of the semiconductor element. Has a non-existing region of an insulating layer at least on the outermost layer on the surface side to be joined to the lead, and the base material is interposed between the semiconductor element and the lead in the non-existing region. And the base material is disposed so as to directly overlap the surface, and the thickness of the base material of the base material is determined by bonding the semiconductor element and the lead. Characterized by comprising used is convex electrode having a height below. In the above structure,
The bonding surface of the lead is formed flat,
The convex upper electrode is formed on the semiconductor element side. Further, in the above structure, the convex electrode is made of gold, and the bonding surface of the lead is plated with tin. In addition, instead of the convex upper electrode being formed on the semiconductor element side, the convex electrode is formed on the lead side, and the convex electrode is provided at a connection position of the convex electrode of the semiconductor element. Is formed to form a concave portion to be fitted. that time,
On the surface of the convex electrode, a nickel plating layer and a gold plating layer are laminated on the nickel plating layer.

[0011]

According to the above structure of the present invention, the semiconductor device to be bonded has a device hole having the same shape as or less than the external dimensions of the semiconductor device. Therefore, the length of the inner lead projecting from the device hole is equal to the electrode length of the semiconductor device. Therefore, the distance from the tape carrier device hole to the semiconductor element electrode can be reduced as much as possible. This enables stable lead forming.

In addition, since the length of the inner lead projecting from the device hole is reduced, the inner lead projecting from the device hole may be bent when flowing into the chemical layer in a long time in a plating process or the like in a tape carrier manufacturing process. The occurrence of defects can be suppressed.

[0013]

FIG. 1 is a sectional view showing an embodiment of the present invention. In the figure, 1 is a tape carrier, 3 is a lead provided on the tape carrier 1, and 3a is, for example, 30 μm in width.
The inner leads 4 protruding from the device holes are tin-plated layers provided on the inner leads.
About 0.4 to 1.0 μm, 6 is a semiconductor element, 6a is a gold convex electrode provided on the semiconductor element 6 and has a height of about 20 μm.
３０30 μm. 6b is an aluminum wiring of the semiconductor element, 6c is an insulating layer covering the aluminum wiring 6b, and 6d is a barrier metal layer interposed between the aluminum wiring 6b and the convex electrode 6a.

In the semiconductor device configured as described above,
Since the tin plating layer 4 is provided on the inner lead 3a,
A number of convex electrodes 6a provided on the semiconductor element 6 are aligned with the tips of the inner leads 3a of the respective leads 3, and then the heated bonding tool is lowered to press the respective leads 3 to press the respective inner leads 3. When the tip of 3a is fused and connected to each of the convex electrodes 6a of the semiconductor element 6, since the device hole of the tape carrier 1 is smaller than that of the semiconductor element 6, the inner lead 3a protruding from the device hole is conventionally used. About 500 to 1000 μm, the width of the convex electrode 6a + the forming amount + α of about 100 to 2
It can be suppressed to about 00 μm. As a result, when the length of the inner lead 3a protruding from the device hole is compared with that of the related art, a difference of 400 to 800 μm appears, which contributes to high-density mounting.

If the material of the tape carrier 1 is, for example, polyimide having a thickness of 50 μm, and the height of the gold convex electrode 6 d provided on the semiconductor element is 30 μm, the tape carrier 1 has a surface area of the semiconductor element 6. Since it is formed smaller than the semiconductor element 6, the tape carrier can be formed on the semiconductor element 6 and the forming amount can be suppressed to 50 μm in the thickness of the tape carrier, and it can extend from the convex electrode 6a provided on the semiconductor element to the device hole edge of the tape carrier 1. Is several tens of μm
Therefore, occurrence of edge short due to reverse forming can be prevented. Thereby, the thickness can be reduced to 50 to 150 μm as compared with the case where the forming of 100 to 200 μm is performed in consideration of the variation of the forming amount at the time of the conventional transport.

FIG. 2 is a sectional view showing another embodiment of the present invention. In this embodiment, the semiconductor element 6 is provided with a concave electrode 6.
e, the inner lead 3a has an electrode filling pad having a projection 7, and the inner lead 3a having the projection 7 is provided with a nickel plating layer 12 having a thickness of about 0.5 μm. 12 is provided with a gold plating layer 13 having a thickness of 1 to 2 μm. The other configuration is the same as that of the embodiment shown in FIG. 1, and therefore the same reference numerals are given and the description of the configuration is omitted.

In this embodiment, the concave electrode 6e provided on the semiconductor element 6 and the protrusion 7 of the inner lead 3a of each lead 3 are provided.
Then, the heated bonding tool is lowered and the respective leads 3 are pressed to press the protrusions 7 of the inner leads 3 a to the respective concave electrodes 6 of the semiconductor element 6.
e and fused and connected.

[0018]

As described above, the present invention has a device hole having the same shape as or smaller than the outer dimension of the semiconductor element to be bonded, and thus the length of the inner lead projecting from the device hole is equal to the electrode length of the semiconductor element. Therefore, the inner lead forming can be performed stably, and the edge short-circuit with the semiconductor element due to the reverse forming can be eliminated. Further, the distance between the tape carrier device hole and the semiconductor element electrode is reduced as much as possible, thereby improving the mounting density and contributing to the reduction in the thickness of the resulting semiconductor device.

Also, since the length of the inner lead projecting from the device hole becomes short, when flowing in a long length to the chemical layer during the plating process or the like in the tape carrier manufacturing process, the inner lead projecting from the device hole is bent. The occurrence of defects can be suppressed.

[Brief description of the drawings]

FIG. 1 is a sectional view showing an embodiment of the present invention.

FIG. 2 is a sectional view showing another embodiment of the present invention.

FIG. 3 is a plan view illustrating a conventional semiconductor device using a tape carrier.

FIG. 4 is a sectional view taken along line AA of FIG. 3;

FIG. 5 is a sectional view showing a manufacturing example of the semiconductor device.

[Explanation of symbols]

 Reference Signs List 1 tape carrier 2 device hole 3 lead 3a inner lead 4 tin plating layer 5 sprocket hole 6 semiconductor element 6a convex electrode 6b aluminum wiring 6c insulating layer 6d barrier metal layer 6e concave electrode 7 protrusion 8 semiconductor element base 9 positioning guide 10 tape rail 11 Bonding tool 12 Nickel plating layer 13 Gold plating layer

Claims (5)

(57) [Claims] 1. A tape carrier having an insulating and flexible base material having a device hole formed therein, and a lead provided from above the base material to the inside of the device hole, and the device hole A semiconductor element that is electrically connected to the lead by being joined to the lead located in the semiconductor device, wherein the device hole has a dimension smaller than an outer peripheral shape of the semiconductor element. The semiconductor element has a non-existing region of an insulating layer at least on the outermost outermost layer on a surface side to be joined to the lead, and the non-existing region has a region between the semiconductor element and the lead. The semiconductor device is arranged so that the base material is interposed and directly overlaps the surface. Wherein a convex-shaped electrode is used having a substrate thickness of the height of the scan base. 2. The semiconductor device according to claim 1, wherein a bonding surface of said lead is formed flat, and said convex upper electrode is formed on a semiconductor element side. 3. The semiconductor device according to claim 2, wherein the convex electrode is made of gold, and a joining surface of the lead is plated with tin. 4. The semiconductor device according to claim 1, wherein the convex electrode is formed on the lead side, and a concave portion for fitting the convex electrode is formed at a connection position of the convex electrode of the semiconductor element. 2. The semiconductor device according to claim 1, wherein 5. The semiconductor device according to claim 4, wherein a nickel plating layer and a gold plating layer are laminated on the nickel plating layer on the surface of the convex electrode.