JP3006797B2 - Semiconductor laser - Google Patents
Semiconductor laserInfo
- Publication number
- JP3006797B2 JP3006797B2 JP2114578A JP11457890A JP3006797B2 JP 3006797 B2 JP3006797 B2 JP 3006797B2 JP 2114578 A JP2114578 A JP 2114578A JP 11457890 A JP11457890 A JP 11457890A JP 3006797 B2 JP3006797 B2 JP 3006797B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- semiconductor laser
- active layer
- waveguide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Lasers (AREA)
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は、長寿命な半導体レーザに関する。Description: TECHNICAL FIELD The present invention relates to a long-life semiconductor laser.
（従来の技術） 従来のAlGaAsレーザでは、活性層導波路層がAl組成の
異なる複数のAlGaAs層で構成され、その中で禁制帯幅の
最も小さな層が発光層として用いられていた。発光層が
単一の層で成る構造と、複数の薄膜から成る多重量子井
戸構造とが知られている。第２図に従来のAlGaAs多重量
子井戸構造レーザの活性層導波路構造の一例を断面図で
示す。複数のGaAsウエル層９がAl0.3Ga0.7Asバリア層13
を挟んで接し、その多層構造の両外側にそれぞれｎ型と
ｐ型のAl0.3Ga0.7Asガイド層14、15が、そしてさらにそ
の外側にｎ型とｐ型のクラッド層２、４が設けられてい
る。注入キャリアは禁制帯幅の最も狭いGaAsウエルに溜
まり、発振に必要なゲインを生じる。(Prior Art) In a conventional AlGaAs laser, an active layer waveguide layer is composed of a plurality of AlGaAs layers having different Al compositions, and a layer having the smallest forbidden band width is used as a light emitting layer. There are known a structure in which the light emitting layer is formed of a single layer and a multiple quantum well structure formed of a plurality of thin films. FIG. 2 is a sectional view showing an example of an active layer waveguide structure of a conventional AlGaAs multiple quantum well structure laser. A plurality of GaAs well layers 9 are formed of Al 0.3 Ga 0.7 As barrier layers 13.
The n-type and p-type Al 0.3 Ga 0.7 As guide layers 14 and 15 are provided on both outer sides of the multilayer structure, and the n-type and p-type cladding layers 2 and 4 are further provided outside. ing. The injected carriers accumulate in the GaAs well having the narrowest forbidden band and generate the gain required for oscillation.
（発明が解決しようとする課題） 従来のAlGaAsレーザは、劣化が比較的速く進行するか
ら寿命の長い素子を得るのが難しい。AlGaAs中ではInGa
AsPなどInを含む半導体層に比較して一般に結晶欠陥の
移動や成長の速度が速い。Alの混晶比が各層で異なって
いるものの活性層導波路構造のすべての層がAlGaAs層で
形成されている従来のAlGaAsレーザでは、ガイド層やク
ラッド層中に存在する結晶欠陥や活性層導波路構造近傍
に設けられた電流狭窄構造部に存在する転位や点欠陥等
が通電とともに比較的速く成長しあるいは移動して活性
層に侵入する。結晶欠陥は活性層内で発行効率を低下さ
せるので、素子は比較的速く劣化する。このように、Al
を含む混晶を活性層とする従来の半導体レーザには寿命
に関し解決すべき課題があった。(Problems to be Solved by the Invention) Since the conventional AlGaAs laser deteriorates relatively quickly, it is difficult to obtain a device having a long life. InGa in InGaAs
Generally, the rate of movement and growth of crystal defects is higher than that of a semiconductor layer containing In such as AsP. In the conventional AlGaAs laser in which all layers of the active layer waveguide structure are formed of the AlGaAs layer, although the Al mixed crystal ratio is different in each layer, crystal defects and active layer conduction existing in the guide layer and the cladding layer are present. Dislocations, point defects, and the like existing in the current constriction structure provided near the waveguide structure grow or move relatively quickly with the energization and enter the active layer. The device degrades relatively quickly because crystal defects reduce the issuance efficiency in the active layer. Thus, Al
The conventional semiconductor laser using a mixed crystal containing as an active layer has a problem to be solved regarding the life.
（課題を解決するための手段） 本発明の半導体レーザは、第１の導電型の半導体基板
上に、少なくとも第１の導電型のクラッド層、活性層導
波路層、そして第２の導電型のクラッド層が順次積層さ
れ、かつ、第２の導電型のクラッド層の一部にリッジ状
の光導波路構造を具備した半導体レーザであって、上記
活性層導波路層が、少なくとも複数のAlGaInP層（Al混
晶比が０の場合を含む）とこのAlGaInP層よりも禁制帯
幅の狭いAlGaAs発光層（Al混晶比が０の場合を含む）と
から成り、このAlGaAs発光層が前記AlGaInP層の間に挟
まれて設けられていることを特徴とする。(Means for Solving the Problems) A semiconductor laser according to the present invention comprises at least a first conductivity type clad layer, an active layer waveguide layer, and a second conductivity type semiconductor substrate on a first conductivity type semiconductor substrate. A semiconductor laser in which a cladding layer is sequentially laminated and a ridge-shaped optical waveguide structure is provided in a part of the second conductivity type cladding layer, wherein the active layer waveguide layer includes at least a plurality of AlGaInP layers ( An AlGaAs light emitting layer having a narrower forbidden band width than that of the AlGaInP layer (including the case where the Al mixed crystal ratio is 0), and the AlGaAs light emitting layer is formed of the AlGaInP layer. It is characterized by being provided in between.
（作用） 本発明の半導体レーザでは、活性層導波路層にAlGaIn
P層を含む。(Operation) In the semiconductor laser of the present invention, AlGaIn is added to the active layer waveguide layer.
Including P layer.
Inを構成元素とするAlGaInP層中では結晶欠陥の成長
や移動速度がAlGaAs層に比較して遅いから、結晶欠陥の
活性層への侵入を抑制でき、半導体レーザの信頼性を大
きく改善できる。In an AlGaInP layer containing In as a constituent element, the growth and movement speed of crystal defects are slower than that of an AlGaAs layer. Therefore, penetration of crystal defects into an active layer can be suppressed, and the reliability of a semiconductor laser can be greatly improved.
（実施例） 本発明の実施例を第１図に示す。第１図（ａ）は本発
明を適用した横モード制御型半導体レーザの構造を示す
断面図であり、第１図（ｂ）はその活性層導波路構造の
構成を模試的に示す断面図である。本実施例の半導体レ
ーザでは、ｎ型GaAs基板１上に、活性層導波路層３を挟
んでｎ型Al0.5Ga0.5Asクラッド層２とｐ型Al0.5Ga0.5As
クラッド層４とが設けられており、さらにｎ型GaAs電流
ブロック層６による電流狭窄および横モード制御構造を
備えている。ｐ型GaAsキャップ層５上に低抵抗のオーミ
ックコンタクトが形成されている。符号７と８はｎ側と
ｐ側の電極をそれぞれ示す。活性層導波層３は、３層の
GaAsウエル層９が２層のGaInPバリア層10を間に挟んで
なる多層膜と、この多層膜の両外側に設置されたｐ型と
ｎ型のGaInPガイド層11及び12より構成される。GaInP層
中では結晶欠陥の成長や移動速度がAlGaAs層に比較して
遅いから、ガイド層やバリア層が結晶欠陥の活性層への
侵入を抑制し、寿命の長い半導体レーザが得られる。(Example) An example of the present invention is shown in FIG. FIG. 1A is a sectional view showing a structure of a lateral mode control type semiconductor laser to which the present invention is applied, and FIG. 1B is a sectional view schematically showing a configuration of an active layer waveguide structure. is there. In the semiconductor laser of this embodiment, an n-type Al 0.5 Ga 0.5 As clad layer 2 and a p-type Al 0.5 Ga 0.5 As are sandwiched on an n-type GaAs substrate 1 with an active layer waveguide layer 3 interposed therebetween.
A cladding layer 4 is provided, and a current confinement and transverse mode control structure by an n-type GaAs current blocking layer 6 is provided. A low-resistance ohmic contact is formed on the p-type GaAs cap layer 5. Reference numerals 7 and 8 denote n-side and p-side electrodes, respectively. The active layer waveguide layer 3 has three layers.
The GaAs well layer 9 includes a multilayer film having two GaInP barrier layers 10 interposed therebetween, and p-type and n-type GaInP guide layers 11 and 12 provided on both outer sides of the multilayer film. Since the growth and movement speed of crystal defects in the GaInP layer are slower than that of the AlGaAs layer, the guide layer and the barrier layer suppress the penetration of crystal defects into the active layer, and a long-life semiconductor laser is obtained.
本発明が本実施例の層構造に限定されないのは勿論で
ある。AlGaAsウエル層やAlGaInPバリア層やAlGaInPガイ
ド層を用いた構造、またｐ型のガイド層の層厚や組成が
ｎ型のガイド層と異なる構造や、活性層に単一のAlGaAs
層を用いた構造などの活性層光導波路構造の半導体レー
ザ構造にも本発明を適用出来る。また従来知られている
各種の水平横モード制御構造や電狭窄構造の半導体レー
ザにも本発明を適用でき同様の効果を得ることができ
る。Needless to say, the present invention is not limited to the layer structure of the present embodiment. A structure using an AlGaAs well layer, an AlGaInP barrier layer, or an AlGaInP guide layer, a structure in which the thickness and composition of the p-type guide layer are different from those of the n-type guide layer, and a single AlGaAs active layer
The present invention is also applicable to a semiconductor laser structure having an active layer optical waveguide structure such as a structure using a layer. In addition, the present invention can be applied to various conventionally known semiconductor lasers having a horizontal / transverse mode control structure or an electric constriction structure, and similar effects can be obtained.
（発明の効果） 本発明によれば、以上に実施例を挙げて詳しく説明し
たように、寿命の長い半導体レーザが得られる。(Effects of the Invention) According to the present invention, a semiconductor laser having a long lifetime can be obtained as described in detail with reference to the embodiments.
第１図（ａ）は本発明の実施例の半導体レーザの構造を
示す断面図、第１図（ｂ）はその半導体レーザの活性層
導波路構造を模式的に示す断面図である。第２図は従来
のAlGaAsレーザにおける活性層導波路構造を示す断面図
である。 １……ｎ型GaAs基板、２……ｎ型Al0.5Ga0.5Asクラッド
層、３……活性層導波路層、４……ｐ型Al0.5Ga0.5Asク
ラッド層、５……ｐ型GaAsキャップ層、６……ｎ型GaAs
ブロック層、７……ｎ側電極、８……ｐ側電極、９……
GaAsウエル層、10……GaInPバリア層、11……ｎ型GaInP
ガイド層、12……ｐ型GaInPガイド層、13……Al0.3Ga
0.7Asバリア層、14……ｎ型Al0.3Ga0.7Asガイド層、15
……ｐ型Al0.3Ga0.7Asガイド層。FIG. 1A is a sectional view showing a structure of a semiconductor laser according to an embodiment of the present invention, and FIG. 1B is a sectional view schematically showing an active layer waveguide structure of the semiconductor laser. FIG. 2 is a sectional view showing an active layer waveguide structure in a conventional AlGaAs laser. 1 ...... n-type GaAs substrate, 2 ...... n-type Al 0.5 Ga 0.5 As cladding layer, 3 ...... active layer waveguide layer, 4 ...... p-type Al 0.5 Ga 0.5 As cladding layer, 5 ...... p-type GaAs cap Layer 6, n-type GaAs
Block layer, 7 ... n-side electrode, 8 ... p-side electrode, 9 ...
GaAs well layer, 10 ... GaInP barrier layer, 11 ... n-type GaInP
Guide layer, 12: p-type GaInP guide layer, 13: Al0.3 Ga
0.7 As barrier layer, 14 n-type Al 0.3 Ga 0.7 As guide layer, 15
... p-type Al 0.3 Ga 0.7 As guide layer.
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平２−134887（ＪＰ，Ａ) 特開 平１−204487（ＪＰ，Ａ) 特開 昭60−58693（ＪＰ，Ａ) 特開 昭61−69189（ＪＰ，Ａ) 特開 昭61−121381（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01S 3/18 ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-2-134887 (JP, A) JP-A-1-204487 (JP, A) JP-A-60-58693 (JP, A) JP-A-61-1986 69189 (JP, A) JP-A-61-121381 (JP, A) (58) Fields investigated (Int. Cl. 7 , DB name) H01S 3/18
Claims (1)
も第１の導電型のクラッド層、活性層導波路層、そして
第２の導電型のクラッド層が順次積層され、かつ、第２
の導電型のクラッド層の一部にリッジ状の光導波路構造
を具備した半導体レーザにおいて、 前記活性層導波路層が、少なくとも複数のAlGaInP層（A
l混晶比が０の場合を含む）とこのAlGaInP層よりも禁制
帯幅の狭いAlGaAs発光層（Al混晶比が０の場合を含む）
とから成り、このAlGaAs発光層が前記AlGaInP層の間に
挟まれて設けられていることを特徴とする半導体レー
ザ。A first conductive type clad layer, an active layer waveguide layer, and a second conductive type clad layer are sequentially laminated on a first conductive type semiconductor substrate;
A semiconductor laser having a ridge-shaped optical waveguide structure in a part of the conductive type cladding layer, wherein the active layer waveguide layer comprises at least a plurality of AlGaInP layers (A
l Includes the case where the mixed crystal ratio is 0) and an AlGaAs light emitting layer having a narrower forbidden band than this AlGaInP layer (including the case where the Al mixed crystal ratio is 0)
Wherein the AlGaAs light emitting layer is provided between the AlGaInP layers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2114578A JP3006797B2 (en) | 1990-04-27 | 1990-04-27 | Semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2114578A JP3006797B2 (en) | 1990-04-27 | 1990-04-27 | Semiconductor laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0410689A JPH0410689A (en) | 1992-01-14 |
| JP3006797B2 true JP3006797B2 (en) | 2000-02-07 |
Family
ID=14641349
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2114578A Expired - Fee Related JP3006797B2 (en) | 1990-04-27 | 1990-04-27 | Semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3006797B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5301202A (en) * | 1993-02-25 | 1994-04-05 | International Business Machines, Corporation | Semiconductor ridge waveguide laser with asymmetrical cladding |
| CN103295936B (en) | 2012-02-29 | 2016-01-13 | 斯克林集团公司 | Substrate board treatment and substrate processing method using same |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01204487A (en) * | 1988-02-10 | 1989-08-17 | Nec Corp | Semiconductor laser |
| JPH02134887A (en) * | 1988-11-16 | 1990-05-23 | Hitachi Ltd | Semiconductor laser element and manufacture thereof |
-
1990
- 1990-04-27 JP JP2114578A patent/JP3006797B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0410689A (en) | 1992-01-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |