JP3004679B2 - Method of forming transparent conductive film - Google Patents

Method of forming transparent conductive film

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Publication number
JP3004679B2
JP3004679B2 JP2137480A JP13748090A JP3004679B2 JP 3004679 B2 JP3004679 B2 JP 3004679B2 JP 2137480 A JP2137480 A JP 2137480A JP 13748090 A JP13748090 A JP 13748090A JP 3004679 B2 JP3004679 B2 JP 3004679B2
Authority
JP
Japan
Prior art keywords
fluorine
antimony
transparent conductive
solution
amount
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2137480A
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Japanese (ja)
Other versions
JPH0433213A (en
Inventor
修 高松
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Kaneka Corp
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Kaneka Corp
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Filing date
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Priority to JP2137480A priority Critical patent/JP3004679B2/en
Publication of JPH0433213A publication Critical patent/JPH0433213A/en
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Publication of JP3004679B2 publication Critical patent/JP3004679B2/en
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Expired - Fee Related legal-status Critical Current

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Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、太陽電池や液晶、エレクトロルミネッセン
ス等の装置に用いられる透明導電性酸化錫膜の形成方法
に関する。
Description: TECHNICAL FIELD The present invention relates to a method for forming a transparent conductive tin oxide film used for devices such as solar cells, liquid crystals, and electroluminescence.

〔従来の技術〕 従来、透明導電性酸化錫膜の形成方法の1つとして、
アンチモンを含む透明導電性酸化錫膜(以下、SnO2:Sb
膜と表す)としては、例えば水等の溶媒に塩化第2錫
(SnCl4・5H2O)と及び三塩化アンチモン(SnCl3)を溶
かした溶液を、表面をSiO2により被膜したソーダライム
ガラスを400℃以上に加熱した上に、スプレー塗布法に
より塗布し、形成させる方法が知られている。また、も
う1つのフッ素を含む透明導電性酸化錫膜(以下、Sn
O2:F膜と表す)としては、同様に水等の溶媒に塩化第2
錫(SnCl4・5H2O)及びフッ化アンモニウム(NH4F)、
フッ化水素(HF)、フッ化水素アンモニウム(NH4FHF)
等を溶かした溶液を、表面をSiO2により被覆したソーダ
ライムガラスを400℃以上に加熱した上に、スプレー塗
布法により塗布し、形成させる方法が知られている。
[Prior Art] Conventionally, as one method of forming a transparent conductive tin oxide film,
A transparent conductive tin oxide film containing antimony (hereinafter, SnO 2 : Sb
As a film, for example, soda-lime glass having a surface coated with SiO 2 with a solution obtained by dissolving stannic chloride (SnCl 4 .5H 2 O) and antimony trichloride (SnCl 3 ) in a solvent such as water Is heated to 400 ° C. or higher, and then applied by a spray coating method to form the film. Further, another transparent conductive tin oxide film containing fluorine (hereinafter referred to as Sn
O 2 : F film) is also used in a solvent such as water.
Tin (SnCl 4 · 5H 2 O) and ammonium fluoride (NH 4 F),
Hydrogen fluoride (HF), ammonium hydrogen fluoride (NH 4 FHF)
A method is known in which a solution prepared by dissolving the above is heated to 400 ° C. or higher on soda lime glass whose surface is coated with SiO 2, and then applied by spray coating to form a soda lime glass.

〔発明が解決しようとする問題点〕 しかし乍ら、前者の方法、即ち、水等の溶媒に塩化第
2錫(SnCl4・5H2O)と及び三塩化アンチモン(SbCl3
を溶かした溶液を調整した場合、コロイド溶液となり、
常時攪拌を行わなければ、時間の経過と共に沈降分離し
安定性に欠けるという問題がある。また、基板表面に一
定膜厚の膜を形成した場合、Sbのドーピング量を増やす
と共にシート抵抗値は下がるが、基板が青く着色され、
光の透過度が大きく低下する。また、後者の方法、即ち
フッ素をドーピングする場合は、三塩化アンチモン(Sb
Cl3)の代わりにフッ化アンモニウム(NH4F)、フッ化
水素アンモニウム(NH4FHF)、フッ化水素(HF)等がド
ーピング剤として用いられるが、反応時に揮散が起こり
ドーピング効率が低くなるため、膜内必要量に対し過剰
量を加える必要があり、未反応のフッ素化合物の廃棄処
理等の問題が生じる。また、基板表面に一定膜厚の膜を
形成した場合、Fのドーピング量を増やすと共にシート
抵抗値は下がるが、基板が黄色く着色され、光の透過度
が大きく低下する。
[INVENTION A problem to be solved] However乍Ra, the former method, i.e., a solvent such as water stannic chloride (SnCl 4 · 5H 2 O) and Oyobi antimony trichloride (SbCl 3)
When a solution prepared by dissolving is prepared, it becomes a colloid solution,
If the stirring is not carried out constantly, there is a problem that sedimentation and separation occur with the lapse of time and stability is lacking. In addition, when a film having a constant thickness is formed on the substrate surface, the sheet resistance value decreases as the doping amount of Sb increases, but the substrate is colored blue,
Light transmittance is greatly reduced. In the latter method, that is, when doping with fluorine, antimony trichloride (Sb
Ammonium fluoride (NH 4 F), ammonium hydrogen fluoride (NH 4 FHF), hydrogen fluoride (HF), etc. are used as doping agents instead of Cl 3 ), but volatilization occurs during the reaction and the doping efficiency decreases. Therefore, it is necessary to add an excess amount to the necessary amount in the membrane, and a problem such as disposal of unreacted fluorine compound occurs. Further, when a film having a constant thickness is formed on the surface of the substrate, the sheet resistance value decreases as the doping amount of F increases, but the substrate is colored yellow and the light transmittance greatly decreases.

本発明は、これら従来法で作製された透明導電性酸化
錫膜と比べ、同膜厚である場合には、より低抵抗且つよ
り高い透明性を示すとともに、ドーピング効率において
も優れており、かくして、従来法よりもドーピング剤量
を少なくて済む形成方法を提供することを目的とする。
The present invention, when compared with the transparent conductive tin oxide films manufactured by these conventional methods, shows lower resistance and higher transparency when they have the same film thickness, and also has excellent doping efficiency, thus It is another object of the present invention to provide a forming method which requires a smaller amount of a doping agent than a conventional method.

〔問題点を解決するための手段〕[Means for solving the problem]

前記した如く、スプレー法において透明導電性酸化錫
膜を作製するに際し、溶媒としては爆発等の危険性を回
避するため、水を主体とした溶媒溶液により行われてお
り、SnO2:Sb膜の作製にはドーピング剤として三塩化ア
ンチモン(SbCl3)が用いられるが、三塩化アンチモン
は水中においては透明な溶液とはならずコロイド溶液と
なり、時間の経過と共に沈降分離が起こる。
As described above, when producing a transparent conductive tin oxide film by the spray method, as a solvent, in order to avoid the danger of explosion and the like, a solvent solution mainly composed of water is used, and a SnO 2 : Sb film is used. Antimony trichloride (SbCl 3 ) is used as a doping agent for the preparation, but antimony trichloride does not become a transparent solution in water but a colloidal solution, and sedimentation occurs with the passage of time.

しかし乍ら、本発明者らは鋭意研究の結果、この溶液
にフッ素とアンチモンを含有する水溶性錯化合物を加え
ることによりコロイド溶液とはならず安定な透明溶液を
得られることを知見した。また、本溶液にはドーピング
剤としてフッ素も含まれ比較的安定な錯化合物が形成さ
れており、従来法においてはフッ素のドーピングを行っ
た場合には、高温時にフッ素の揮散が大きく多量のフッ
素化合物を必要としたが、本溶液の場合にはこのような
問題もなく効率よくドーピングが行われるためフッ素化
合物としては少量で済むこと、更にまた、理由は明らか
でないが、アンチモンとフッ素が同時にドーピングされ
ることにより、従来法のそれぞれの単元素ドーピング膜
と同等の膜厚を有する膜を作製した場合、従来法よりも
低抵抗且つ高透明度の膜の作製が可能であるという知見
を得た。本発明はかかる知見に基づき完成されたもので
ある。
However, the present inventors have made intensive studies and found that a stable transparent solution can be obtained without adding a colloid solution by adding a water-soluble complex compound containing fluorine and antimony to this solution. In addition, this solution also contains fluorine as a doping agent, and a relatively stable complex compound is formed.In the conventional method, when doping with fluorine, fluorine volatilization is large at high temperatures and a large amount of fluorine compound is formed. However, in the case of this solution, doping is efficiently performed without such a problem, so that only a small amount of a fluorine compound is sufficient.Moreover, although the reason is not clear, antimony and fluorine are simultaneously doped. As a result, it has been found that when a film having the same thickness as each single element doping film of the conventional method is manufactured, a film having lower resistance and higher transparency than the conventional method can be manufactured. The present invention has been completed based on such findings.

即ち、本発明は、加熱した基板上に、錫化合物と、ア
ンチモン及びフッ素供給源としてペンタフルオロアンチ
モン(III)酸アンモニウム{(NH4(SbF5)}を含
む溶液をスプレー法により塗布することを特徴とする透
明導電性酸化錫膜の形成方法を内容とするものである。
That is, in the present invention, a solution containing a tin compound and ammonium pentafluoroantimonate (III) {(NH 4 ) 2 (SbF 5 )} as a source of antimony and fluorine is applied to a heated substrate by a spray method. A method for forming a transparent conductive tin oxide film, characterized in that:

本発明におけるアンチモン及びフッ素の供給源として
は、フッ素とアンチモンを含有する水溶性錯化合物であ
るペンタフルオロアンチモン(III)酸アンモニウム
{(NH4(SbF5)}が用いられ、単独で又は他のア
ンチモン化合物、フッ素化合物と組み合わせて用いるこ
とができる。かかるアンチモン化合物としては、塩化ア
ンチモン(SbCl3)等が好適である。またフッ素化合物
としては、フッ化水素アンモニウム(NH4FHF)、フッ化
アンモニウム(NH4F)等が好適である。
As a source of antimony and fluorine in the present invention, ammonium pentafluoroantimonate (III) {(NH 4 ) 2 (SbF 5 )}, which is a water-soluble complex compound containing fluorine and antimony, is used alone or It can be used in combination with other antimony compounds and fluorine compounds. As such an antimony compound, antimony chloride (SbCl 3 ) is suitable. As also fluorine compounds, ammonium hydrogen fluoride (NH 4 FHF), ammonium fluoride (NH 4 F) and the like.

本発明に用いられる錫化合物としては、塩化第一錫
(SnCl2)、塩化第二錫(SnCl4・5H2O)、臭化第一錫
(SnBr2)等が使用でき、溶媒としては、水あるいは水
とエタノールの混合溶媒、水と塩酸の混合溶媒等が適し
ている。溶液中のフッ素及びアンチモンの合計量は、錫
に対して0.1〜30重量%が好ましい。成膜時の基板温度
としては400〜500℃が好適である。
As the tin compound used in the present invention, stannous chloride (SnCl 2 ), stannic chloride (SnCl 4 .5H 2 O), stannous bromide (SnBr 2 ) and the like can be used. Water, a mixed solvent of water and ethanol, a mixed solvent of water and hydrochloric acid, and the like are suitable. The total amount of fluorine and antimony in the solution is preferably 0.1 to 30% by weight based on tin. The substrate temperature during film formation is preferably from 400 to 500 ° C.

〔実施例〕〔Example〕

次に、本発明を実施例及び比較例を挙げて更に詳細に
説明するが、これらは本発明を限定するものではない。
Next, the present invention will be described in more detail with reference to Examples and Comparative Examples, but these do not limit the present invention.

実施例1 ペンタフルオロアンチモン(III)酸アンモニウム
{(NH4(SbF5)}1.43gを、水1000ml中に35%塩酸
50g入った混合溶媒に溶解せしめた溶液を作製した。こ
の溶液の錫に対するアンチモン量は2重量%、錫に対す
るフッ素量は1.57重量%であった。次に、この溶液を、
450℃に加熱された表面SiO2(500Å)コート付きソーダ
ライムガラス厚さ1.1mmの基板の片側表面にスプレー塗
布して、膜厚4000Åの透明導電性酸化錫膜を得た。
Example 1 1.43 g of ammonium pentafluoroantimonate (III) {(NH 4 ) 2 (SbF 5 )} was added to 35% hydrochloric acid in 1000 ml of water.
A solution dissolved in a mixed solvent containing 50 g was prepared. In this solution, the amount of antimony based on tin was 2% by weight, and the amount of fluorine based on tin was 1.57% by weight. Next, this solution is
Soda lime glass with a surface SiO 2 (500 mm) coat heated to 450 ° C. was spray-coated on one surface of a 1.1 mm thick substrate to obtain a transparent conductive tin oxide film having a thickness of 4000 mm.

比較例1 実施例1のペンタフルオロアンチモン(III)酸アン
モニウム{(NH4(SbF5)}の代わりにフッ化アン
モニウム(NH4F)を3.46g使用し、錫に対するアンチモ
ン量を0重量%、錫に対するフッ素量を5重量%にした
以外は実施例1と同様の操作を行った。
Comparative Example 1 Instead of ammonium pentafluoroantimonate (III) {(NH 4 ) 2 (SbF 5 )} of Example 1, 3.46 g of ammonium fluoride (NH 4 F) was used, and the amount of antimony with respect to tin was 0 weight. %, And the same operation as in Example 1 except that the amount of fluorine based on tin was 5% by weight.

比較例2 実施例1のペンタフルオロアンチモン(III)酸アン
モニウム{(NH4(SbF5)}の代わりにフッ化アン
モニウム(NH4F)を7.29g使用し、錫に対するアンチモ
ン量を0重量%、錫に対するフッ素量を10重量%にした
以外は実施例1と同様の操作を行った。
Comparative Example 2 Instead of ammonium pentafluoroantimonate (III) {(NH 4 ) 2 (SbF 5 )} of Example 1, 7.29 g of ammonium fluoride (NH 4 F) was used, and the amount of antimony with respect to tin was 0 weight. %, And the same operation as in Example 1 except that the amount of fluorine based on tin was 10% by weight.

比較例3 実施例1のペンタフルオロアンチモン(III)酸アン
モニウム{(NH4(SbF5)}の代わりに三塩化アン
チモン(SbCl3)を1.96gとし、錫に対するアンチモン量
を3重量%、錫に対するフッ素量を0重量%にした以外
は実施例1と同様の操作を行った。
Comparative Example 3 Instead of ammonium pentafluoroantimonate (III) {(NH 4 ) 2 (SbF 5 )} of Example 1, 1.96 g of antimony trichloride (SbCl 3 ) was used, and the amount of antimony with respect to tin was 3% by weight. The same operation as in Example 1 was performed except that the amount of fluorine based on tin was 0% by weight.

前記実施例1及び比較例1〜3により得られた各透明
導電性酸化錫膜の評価として比抵抗及び可視光透過率を
測定し、結果を第1表に示す。
As evaluation of each transparent conductive tin oxide film obtained in Example 1 and Comparative Examples 1 to 3, specific resistance and visible light transmittance were measured, and the results are shown in Table 1.

上記第1表の結果から明らかなように、本実施例は比
較例に比して、少量のドーピング剤量で低抵抗且つ同等
もしくはそれ以上の光透過率を有する透明導電性酸化錫
膜が形成され、また、溶液の安定性も良好であることが
確認された。
As is clear from the results in Table 1 above, in this example, a transparent conductive tin oxide film having low resistance and light transmittance equal to or higher than that of the comparative example was formed with a small amount of the doping agent. It was also confirmed that the stability of the solution was good.

〔作用・効果〕[Action / Effect]

本発明は、アンチモンとフッ素とを含有する水溶性錯
化合物であるペンタフルオロアンチモン(III)酸アン
モニウム{(NH4(SbF5)}を用いることにより、
アンチモン単独の場合の溶液の不安定等の問題、及びフ
ッ素系単独の場合のフッ素揮散等の問題が解消されると
ともに、従来法の場合よりも少ない量で低抵抗且つ高透
明性の膜を提供するという顕著な作用効果を奏する。
The present invention uses ammonium pentafluoroantimonate (III) {(NH 4 ) 2 (SbF 5 )}, which is a water-soluble complex compound containing antimony and fluorine,
The problem of instability of the solution in the case of antimony alone and the problem of the volatilization of fluorine in the case of fluorine alone are eliminated, and a low-resistance and high-transparency film is provided in a smaller amount than in the conventional method. This has a remarkable effect.

以上の如く、本発明によれば、従来法よりも少量のド
ーピング剤量において低抵抗且つ同等もしくはそれ以上
の光透過率を有する透明導電性酸化錫膜が得られる。ま
た、溶液が安定であり未反応ドーピング剤の廃棄処理量
も少なく、産業上極めて有益である。
As described above, according to the present invention, a transparent conductive tin oxide film having low resistance and light transmittance equal to or higher than that of the conventional method can be obtained with a smaller amount of the doping agent. In addition, the solution is stable, and the amount of unreacted doping agent disposed of is small, which is extremely useful in industry.

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】加熱した基板上に、錫化合物と、アンチモ
ン及びフッ素供給源としてペンタフルオロアンチモン
(III)酸アンモニウム{(NH4(SbF5)}を含む溶
液をスプレー法により塗布することを特徴とする透明導
電性酸化錫膜の形成方法。
A solution containing a tin compound and ammonium pentafluoroantimonate (III) {(NH 4 ) 2 (SbF 5 )} as a source of fluorine and antimony is applied on a heated substrate by a spray method. A method for forming a transparent conductive tin oxide film.
【請求項2】溶液中の錫に対するアンチモンとフッ素と
の合計量が0.1〜30重量%である請求項1記載の形成方
法。
2. The method according to claim 1, wherein the total amount of antimony and fluorine based on tin in the solution is 0.1 to 30% by weight.
JP2137480A 1990-05-28 1990-05-28 Method of forming transparent conductive film Expired - Fee Related JP3004679B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2137480A JP3004679B2 (en) 1990-05-28 1990-05-28 Method of forming transparent conductive film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2137480A JP3004679B2 (en) 1990-05-28 1990-05-28 Method of forming transparent conductive film

Publications (2)

Publication Number Publication Date
JPH0433213A JPH0433213A (en) 1992-02-04
JP3004679B2 true JP3004679B2 (en) 2000-01-31

Family

ID=15199615

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JP3004679B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007234587A (en) * 2006-02-01 2007-09-13 Furukawa Electric Co Ltd:The Terminal connector receiving tool, fixing method for terminal connector, and assembling method for wire harness
JP2011094218A (en) * 2009-11-02 2011-05-12 Asahi Glass Co Ltd Method of manufacturing substrate with tin oxide film

Also Published As

Publication number Publication date
JPH0433213A (en) 1992-02-04

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