JPH0433213A - Formation of transparent conductive film - Google Patents

Formation of transparent conductive film

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Publication number
JPH0433213A
JPH0433213A JP13748090A JP13748090A JPH0433213A JP H0433213 A JPH0433213 A JP H0433213A JP 13748090 A JP13748090 A JP 13748090A JP 13748090 A JP13748090 A JP 13748090A JP H0433213 A JPH0433213 A JP H0433213A
Authority
JP
Japan
Prior art keywords
antimony
fluorine
tin
ammonium
solution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13748090A
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Japanese (ja)
Other versions
JP3004679B2 (en
Inventor
Osamu Takamatsu
修 高松
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Kanegafuchi Chemical Industry Co Ltd
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Kanegafuchi Chemical Industry Co Ltd
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Priority to JP2137480A priority Critical patent/JP3004679B2/en
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Abstract

PURPOSE:To ensure lower resistance and higher transparency, and to improve doping efficiency by spraying a tin compound and solvent including antimony and fluorine on a heated substrate. CONSTITUTION:A tin compound and solvent including antimony and fluorine are sprayed on a heated substrate. It is recommended to use antimony trichloride as the antimony resource and at least one is selected from ammonium hydrogen fluoride and ammonium fluoride as the fluorine resource. A comparatively stable tin compound is thus formed, and problems such as unstableness of the solvent when only antimony is used, or fluorine evaporation when only fluorine is used, are solved. By synergism of them, the film with lower resistance and higher transparency can be obtained with less quantity than that obtained by conventional methods.

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は、太陽電池や液晶、エレクトロルミネッセンス
等の装置を用いられる透明導電性酸化錫膜の形成方法に
関する。
DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method for forming a transparent conductive tin oxide film that can be used in devices such as solar cells, liquid crystals, and electroluminescence.

〔従来の技術〕[Conventional technology]

従来、透明導電性酸化錫膜の形成方法の1つとして、ア
ンチモンを含む透明導電性酸化錫膜(以下、Snug 
: Sb膜と表す)としては、例えば水等の溶媒に塩化
第2錫(SnC1=・5820)と及び三塩化アンチモ
ン(SnCI 3)を溶かした溶液を、表面をSing
により被膜したソーダライムガラスを400℃以上に加
熱した上に、スプレー塗布法ムこより塗布し、形成させ
る方法が知られている。また、もう1つのフッ素を含む
透明導電性酸化錫膜(以下、SnOよ:F膜と表す)と
しては、同様に水等の溶媒に塩化第2錫(SnCI=・
5820)及びフン化アンモニウム(NH4F) 、フ
ッ化水素(I(F) 、フッ化水素アンモニウム(Ni
14FHF)等を溶かした溶液を、表面を5iOzによ
り被覆したソーダライムガラスを400℃以上に加熱し
た上に、スプレー塗布法により塗布し、形成させる方法
が知られている。
Conventionally, as one method for forming a transparent conductive tin oxide film, a transparent conductive tin oxide film containing antimony (hereinafter referred to as Snug
: For example, a solution of tin chloride (SnC1=・5820) and antimony trichloride (SnCI3) dissolved in a solvent such as water is used to form a Sb film on the surface.
A known method is to heat soda-lime glass coated with a coating to 400° C. or higher and then apply the coating using a spray coating method. Another fluorine-containing transparent conductive tin oxide film (hereinafter referred to as SnO:F film) can be made by using stannic chloride (SnCI) in a solvent such as water.
5820) and ammonium fluoride (NH4F), hydrogen fluoride (I(F)), ammonium hydrogen fluoride (Ni
A method is known in which a solution containing 14FHF) or the like is applied onto soda lime glass whose surface is coated with 5iOz by spray coating on heated to 400° C. or higher.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

しかし乍ら、前者の方法、即ち、水等の溶媒に塩化第2
錫(SnCI4・5HzO)と及び三塩化アンチモン(
SbC1s)を溶かした溶液を調整した場合、コロイド
溶液となり、常時攪拌を行わなければ、時間の経過と共
に沈降分離し安定性に欠けるという問題がある。また、
基板表面に一定膜厚の膜を形成した場合、sbのドーピ
ング量を増やすと共にシート抵抗値は下がるが、基板が
青く着色され、光の透過度が大きく低下する。また、後
者の方法、即ちフッ素をドーピングする場合は、三塩化
アンチモン(SbCls)の代わりにフッ化アンモニウ
ム(NH4F)、フッ化水素アンモニウム(N)14F
)IP) 、フッ化水素(HF)等がドーピング剤とし
て用いられるが、反応時に揮散が起こりドーピング効率
が低くなるため、膜内必要量に対し過剰量を加える必要
があり、未反応のフッ素化合物の廃棄処理等の問題が生
じる。また、基板表面に一定膜厚の膜を形成した場合、
Fのドーピング量を増やすと共にシート抵抗値は下がる
が、基板が黄色く着色され、光の透過度が大きく低下す
る。
However, the former method, i.e., using dichloride in a solvent such as water,
Tin (SnCI4.5HzO) and antimony trichloride (
When a solution containing SbC1s) is prepared, it becomes a colloidal solution, and unless constant stirring is carried out, there is a problem in that it sediments and separates over time and lacks stability. Also,
When a film with a constant thickness is formed on the substrate surface, the sheet resistance value decreases as the amount of sb doped is increased, but the substrate is colored blue and the light transmittance is greatly reduced. In addition, in the case of the latter method, that is, doping with fluorine, ammonium fluoride (NH4F) and ammonium hydrogen fluoride (N) 14F instead of antimony trichloride (SbCls) are used.
), hydrogen fluoride (HF), etc. are used as doping agents, but they volatilize during the reaction, lowering the doping efficiency, so it is necessary to add an excess amount to the amount required in the film, and unreacted fluorine compounds Problems such as disposal will arise. In addition, when a film with a constant thickness is formed on the surface of the substrate,
As the amount of F doping is increased, the sheet resistance value decreases, but the substrate is colored yellow and the light transmittance is greatly reduced.

本発明は、これら従来法で作製された透明導電性酸化錫
膜と比べ、同膜厚である場合には、より低抵抗且つより
高い透明性を示すとともに、ドーピング効率においても
優れており、かくして、従来法よりもドーピング剤量を
少なくて済む形成方法を提供することを目的とする。
Compared to transparent conductive tin oxide films produced by these conventional methods, the present invention exhibits lower resistance and higher transparency when the film thickness is the same, and is also superior in doping efficiency. It is an object of the present invention to provide a forming method that requires a smaller amount of doping agent than conventional methods.

〔問題点を解決するための手段〕[Means for solving problems]

前記した如く、スプレー法において透明導電性酸化錫膜
を作製するに際し、溶媒としては爆発等の危険性を回避
するため、水を生体とした溶媒溶液により行われており
、SnO□:Sb膜の作製にはドーピング剤として三塩
化アンチモン(SbCl2)が用いられるが、三塩化ア
ンチモンは水中においては透明な溶液とはならずコロイ
ド溶液となり、時間の経過と共に沈降分離が起こる。
As mentioned above, when producing a transparent conductive tin oxide film using the spray method, a solvent solution containing water as a living body is used to avoid risks such as explosions. Antimony trichloride (SbCl2) is used as a doping agent in the production, but antimony trichloride does not become a transparent solution in water but becomes a colloidal solution, and sedimentation and separation occurs over time.

しかし乍ら、本発明者らは鋭意研究の結果、この溶液に
例えばフッ化水素アンモニウム(NHJFT(F)、フ
ッ化アンモニウム(N114F)等を加えることにより
コロイド溶液とはならず安定な透明溶液を得られること
を知見した。また、本溶液にはドーピング剤としてフッ
素も含まれ比較的安定な錯化合物が形成されており、従
来法においてはフッ素のドーピングを行った場合には、
高温時にフッ素の揮散が大きく多量のフッ素化合物を必
要したが、本溶液の場合にはこのような問題もなく効率
よくドーピングが行われるためフッ素化合物としては少
量で済むこと、更にまた、理由は明らかでないが、アン
チモンとフッ素が同時にドーピングされることにより、
従来法のそれぞれの単元素ドーピング膜と同等の膜厚を
有する膜を作製した場合、従来法よりも低抵抗且つ高透
明度の膜の作製が可能であるという知見を得た0本発明
はかかる知見に基づき完成されたものである。
However, as a result of intensive research, the present inventors found that by adding, for example, ammonium hydrogen fluoride (NHJFT (F), ammonium fluoride (N114F), etc.) to this solution, a stable transparent solution was created instead of a colloidal solution. In addition, this solution also contains fluorine as a doping agent, forming a relatively stable complex, and in the conventional method, when fluorine is doped,
Fluorine volatilizes at high temperatures and requires a large amount of fluorine compound, but in the case of this solution, doping is carried out efficiently without such problems, so only a small amount of fluorine compound is required, and the reason is clear. However, by doping with antimony and fluorine at the same time,
The present invention has obtained the knowledge that when a film having the same thickness as each single-element doped film of the conventional method is produced, it is possible to produce a film with lower resistance and higher transparency than the conventional method. It was completed based on.

即ち、本発明は、加熱した基板上に、錫化合物と、アン
チモン及びフッ素を含む溶液をスプレー法により塗布す
ることを特徴とする透明導電性酸化錫膜の形成方法を内
容とするものである。
That is, the present invention is directed to a method for forming a transparent conductive tin oxide film, which comprises applying a solution containing a tin compound, antimony, and fluorine onto a heated substrate by a spray method.

アンチモンの供給源であるアンチモン化合物としては、
塩化アンチモン(SbCls)等が好適である。
Antimony compounds, which are the source of antimony, include:
Antimony chloride (SbCls) and the like are preferred.

またフッ素の供給源であるフッ素化合物としては、フン
化水素アンモニウム(NH,FHF) 、フッ化アンモ
ニウム(NH4F)等が好適で、これらは単独又は組み
合わせて用いられる。また、フッ素とアンチモンを含有
する水溶性錯化合物であるペンタフルオロアンチモン(
III)酸アンモニウム((N)l−)z(SbFs)
 lも単独又は上記アンチモン化合物、フッ素化合物と
組み合わせて用いることができる。
Further, as the fluorine compound which is the source of fluorine, ammonium hydrogen fluoride (NH, FHF), ammonium fluoride (NH4F), etc. are suitable, and these may be used alone or in combination. In addition, pentafluoroantimony is a water-soluble complex compound containing fluorine and antimony.
III) ammonium acid ((N)l-)z(SbFs)
1 can also be used alone or in combination with the above antimony compounds and fluorine compounds.

アンチモン化合物のアンチモンとフッ素化合物のフッ素
との割合は、重量比でアンチモン1に対しフッ素5以上
であることが好ましい。
The ratio of antimony in the antimony compound to fluorine in the fluorine compound is preferably 1 part antimony to 5 parts fluorine or more by weight.

本発明に用いられる錫化合物としては、塩化第一錫(S
nCI z)、塩化第二錫(SnCI a ・5HzO
)、臭化第一錫(SnBrz)等が使用でき、溶媒とし
ては、水あるいは水とエタノールの混合溶媒、水と塩酸
の混合溶媒等が適している。溶液中のフッ素及びアンチ
モンの合計量は、錫に対して0.1〜30重量%が好ま
しく、この範囲内で前記の如くアンチモントフツ素の割
合が重量比でアンチモン1に対しフッ素5以上となるよ
うに調整するのが好ましい。
The tin compound used in the present invention includes stannous chloride (S
nCI z), tin chloride (SnCI a ・5HzO
), stannous bromide (SnBrz), etc. can be used, and suitable solvents include water, a mixed solvent of water and ethanol, and a mixed solvent of water and hydrochloric acid. The total amount of fluorine and antimony in the solution is preferably 0.1 to 30% by weight based on tin, and within this range, the ratio of antimony to fluorine is 5 or more by weight to 1 antimony as described above. It is preferable to adjust as follows.

成膜時の基板温度としては400〜500°Cが好適で
ある。
The substrate temperature during film formation is preferably 400 to 500°C.

〔実施例〕〔Example〕

次に、本発明を実施例及び比較例を挙げて更に詳細に説
明するが、これらは本発明を限定するものではない。
Next, the present invention will be explained in more detail by giving Examples and Comparative Examples, but these are not intended to limit the present invention.

実施例1 塩化第二錫(SnCIa、5HzO)を100gと、三
塩化アンチモン(SnCIs)を0.64 gと、フン
化水素アンモニウム(N)IJ)IF)を2.67 g
とを、水1000jd中に35%塩酸50g入った混合
溶媒に溶解せしめた溶液を作製した。この溶液の錫に対
するアンチモン量は1重量%、錫に対するフッ素量は5
重量%であった。次に、この溶液を、450°Cに加熱
された表面Sing (500人)コート付きソーダラ
イムガラス厚さ1.1aa++の基板の片側表面にスプ
レー塗布して、膜厚4000人の透明導電性酸化錫膜を
得た。
Example 1 100 g of stannic chloride (SnCIa, 5HzO), 0.64 g of antimony trichloride (SnCIs), and 2.67 g of ammonium hydrogen fluoride (N)IJ)IF)
A solution was prepared by dissolving these in a mixed solvent containing 50 g of 35% hydrochloric acid in 1000 jd of water. The amount of antimony with respect to tin in this solution is 1% by weight, and the amount of fluorine with respect to tin is 5% by weight.
% by weight. This solution was then spray applied onto one surface of a 1.1aa++ thick substrate of surface Sing (500 people) coated soda lime glass heated to 450°C to form a transparent conductive oxide film with a film thickness of 4000 people. A tin film was obtained.

実施例2 三塩化アンチモン(SbC1s)を0.32 gと、フ
ッ化水素アンモニウム(NH4FHF)を1.57 g
使用し、錫に対するアンチモン量を0.5重量%、錫に
対するフッ素量を3重量%とした以外は実施例1と同様
の操作を行った。
Example 2 0.32 g of antimony trichloride (SbC1s) and 1.57 g of ammonium hydrogen fluoride (NH4FHF)
The same operation as in Example 1 was performed except that the amount of antimony was 0.5% by weight relative to tin, and the amount of fluorine was 3% by weight relative to tin.

実施例3 実施例2のフン化水素アンモニウム(NH,FHF)の
代わりにフン化アンモニウム(Nl(、F)を2.04
g使用した以外は実施例2と同様の操作を行った。
Example 3 In place of ammonium hydrogen fluoride (NH, FHF) in Example 2, ammonium fluoride (Nl(,F) was 2.04
The same operation as in Example 2 was performed except that g was used.

実施例4 実施例1の三塩化アンチモン(SbC1s)及びフン化
水素アンモニウム(N)1.FHF)の代わりにペンタ
フルオロアンチモン(I[[)酸アンモニウム((NO
4)z(SbFs) )を1.43g使用し、錫に対す
るアンチモン量を2重量%、錫に対するフッ素量を1.
57重蓋%にした以外は実施例1と同様の操作を行った
Example 4 Antimony trichloride (SbC1s) and ammonium hydrogen fluoride (N) of Example 11. Ammonium pentafluoroantimonyate (I[[)ate ((NO
4) Using 1.43g of z(SbFs), the amount of antimony relative to tin was 2% by weight, and the amount of fluorine relative to tin was 1.43g.
The same operation as in Example 1 was performed except that the weight was 57%.

実施例5 実施例1の溶液を25℃室内に14日保存後、実施例1
と同様のスプレー法による処理を行った。
Example 5 After storing the solution of Example 1 in a room at 25°C for 14 days, Example 1
Treatment was carried out using the same spray method.

比較例1 実施例1の三塩化アンチモン(SbC1ff)及びフン
化水素アンモニウム(NFl、F)iF)の代わりにフ
ン化アンモニウム(N144F)を3.46 g使用し
、錫に対するアンチモン量を0重量%、錫に対するフッ
素量を5重量%にした以外は実施例1と同様の操作を行
った。
Comparative Example 1 3.46 g of ammonium fluoride (N144F) was used instead of antimony trichloride (SbC1ff) and ammonium hydrogen fluoride (NFl, F) iF) in Example 1, and the amount of antimony with respect to tin was 0% by weight. The same operation as in Example 1 was performed except that the amount of fluorine relative to tin was changed to 5% by weight.

比較例2 実施例1の三塩化アンチモン(SbC1及びフッ化水素
アンモニウムCNH4FHF)の代わりにフン化アンモ
ニウム(NH4F)を7.29 g使用し、錫に対する
アンチモン量を0重量%、錫に対するフッ素量を10重
量%にした以外は実施例1と同様の操作を行った。
Comparative Example 2 7.29 g of ammonium fluoride (NH4F) was used instead of antimony trichloride (SbC1 and ammonium hydrogen fluoride CNH4FHF) in Example 1, and the amount of antimony with respect to tin was 0% by weight, and the amount of fluorine with respect to tin was The same operation as in Example 1 was performed except that the amount was changed to 10% by weight.

比較例3 実施例Iの三塩化アンチモン(5bCJ、)を1.96
gとし、フン化水素アンモニウム(NHaFHF)を使
用せず、錫に対するアンチモン量を3重量%、錫に対す
るフッ素量をON量%にした以外は実施例1と同様の操
作を行った。
Comparative Example 3 Antimony trichloride (5bCJ, ) of Example I was added to 1.96
The same operation as in Example 1 was performed except that ammonium hydrogen fluoride (NHaFHF) was not used, the amount of antimony was 3% by weight relative to tin, and the amount of fluorine was 3% by weight relative to tin.

前記実施例1〜4及び比較例1〜3により得られた各透
明導電性酸化錫膜の評価として比抵抗及び可視光透過率
を測定し、結果を第1表に示す。
To evaluate each of the transparent conductive tin oxide films obtained in Examples 1 to 4 and Comparative Examples 1 to 3, specific resistance and visible light transmittance were measured, and the results are shown in Table 1.

第    1    表 *比較例3の溶液は液調整後、1時間後には白色物の沈
降が見られた。
Table 1 * In the solution of Comparative Example 3, precipitation of a white substance was observed 1 hour after the liquid preparation.

上記第1表の結果から明らかなように、本実施例は比較
例に比して、少量のドーピング剤量で低抵抗且つ同等も
しくはそれ以上の光透過率を有する透明at性酸酸化錫
膜形成され、また、溶液の安定性も良好であることが確
認された。
As is clear from the results in Table 1 above, this example formed a transparent at-acid tin oxide film with low resistance and the same or higher light transmittance with a smaller amount of doping agent than in the comparative example. It was also confirmed that the stability of the solution was good.

〔作用・効果〕[Action/Effect]

本発明はアンチモンとフッ素とを含有させることにより
比較的安定な錯化合物が形成され、アンチモン単独の場
合の溶液の不安定等の問題、及びフッ素系単独の場合の
フッ素揮散等の問題が解消されるとともに、両者が相乗
的に作用して従来法の場合よりも少ない量で低抵抗且つ
高透明性の膜を提供するという顕著な作用効果を奏する
ものと推定される。
In the present invention, a relatively stable complex compound is formed by containing antimony and fluorine, and problems such as instability of the solution when using antimony alone and problems such as fluorine volatilization when using fluorine alone are solved. In addition, it is presumed that both of them act synergistically to produce a remarkable effect of providing a film with low resistance and high transparency with a smaller amount than in the case of the conventional method.

以上の如く、本発明によれば、従来法よりも少量のドー
ピング剤量において低抵抗且つ同等もしくはそれ以上の
光透過率を有する透明導電性酸化錫膜が得られる。また
、溶液が安定であり未反応ドーピング剤の廃棄処理量も
少なく、産業上極めて育苗である。
As described above, according to the present invention, a transparent conductive tin oxide film having a lower resistance and an equivalent or higher light transmittance can be obtained with a smaller amount of doping agent than in the conventional method. In addition, the solution is stable and the amount of unreacted doping agent disposed of is small, making it extremely suitable for raising seedlings in industry.

Claims (5)

【特許請求の範囲】[Claims] 1.加熱した基板上に、錫化合物と、アンチモン及びフ
ッ素を含む溶液をスプレー法により塗布することを特徴
とする透明導電性酸化錫膜の形成方法。
1. A method for forming a transparent conductive tin oxide film, comprising applying a solution containing a tin compound, antimony and fluorine onto a heated substrate by a spray method.
2.アンチモン供給源として三塩化アンチモン(SbC
l_3)を用い、フッ素供給源としてフッ化水素アンモ
ニウム(NH_4FHF)及びフッ化アンモニウム(N
H_4F)から選ばれる少なくとも1種を用いる請求項
1記載の形成方法。
2. Antimony trichloride (SbC) as an antimony source
ammonium hydrogen fluoride (NH_4FHF) and ammonium fluoride (N
The forming method according to claim 1, wherein at least one selected from H_4F) is used.
3.アンチモン及びフッ素供給源としてペンタフルオロ
アンチモン(III)酸アンモニウム{(NH_4)_2
(SbF_5)}を用いる請求項1記載の形成方法。
3. Ammonium pentafluoroantimony(III) {(NH_4)_2 as antimony and fluorine source
(SbF_5)}. The method according to claim 1.
4.溶液中の錫に対するアンチモンとフッ素との合計量
が0.1〜30重量%である請求項1記載の形成方法。
4. 2. The method of claim 1, wherein the total amount of antimony and fluorine relative to tin in the solution is 0.1 to 30% by weight.
5.アンチモンとフッ素の割合を重量比でアンチモン1
に対しフッ素が5以上に調整する請求項1又は4記載の
形成方法。
5. The weight ratio of antimony and fluorine is 1 antimony.
The forming method according to claim 1 or 4, wherein the fluorine content is adjusted to 5 or more.
JP2137480A 1990-05-28 1990-05-28 Method of forming transparent conductive film Expired - Fee Related JP3004679B2 (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007234587A (en) * 2006-02-01 2007-09-13 Furukawa Electric Co Ltd:The Terminal connector receiving tool, fixing method for terminal connector, and assembling method for wire harness
JP2011094218A (en) * 2009-11-02 2011-05-12 Asahi Glass Co Ltd Method of manufacturing substrate with tin oxide film

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007234587A (en) * 2006-02-01 2007-09-13 Furukawa Electric Co Ltd:The Terminal connector receiving tool, fixing method for terminal connector, and assembling method for wire harness
JP2011094218A (en) * 2009-11-02 2011-05-12 Asahi Glass Co Ltd Method of manufacturing substrate with tin oxide film

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