JP3004119B2 - Semiconductor pressure sensor - Google Patents

Semiconductor pressure sensor

Info

Publication number
JP3004119B2
JP3004119B2 JP4079178A JP7917892A JP3004119B2 JP 3004119 B2 JP3004119 B2 JP 3004119B2 JP 4079178 A JP4079178 A JP 4079178A JP 7917892 A JP7917892 A JP 7917892A JP 3004119 B2 JP3004119 B2 JP 3004119B2
Authority
JP
Japan
Prior art keywords
semiconductor chip
wall surface
pedestal
closed
pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP4079178A
Other languages
Japanese (ja)
Other versions
JPH05240723A (en
Inventor
和彦 古賀
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denso Corp filed Critical Denso Corp
Priority to JP4079178A priority Critical patent/JP3004119B2/en
Publication of JPH05240723A publication Critical patent/JPH05240723A/en
Application granted granted Critical
Publication of JP3004119B2 publication Critical patent/JP3004119B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は半導体圧力センサに関
し、特に半導体チップの汚染や光劣化を生じないセンサ
の構造改良に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor pressure sensor and, more particularly, to an improvement in the structure of a sensor which does not cause contamination or light deterioration of a semiconductor chip.

【0002】[0002]

【従来の技術】図には従来の半導体圧力センサの構造
を示し、閉鎖ケース1内には底壁面上に矩形ブロック状
のガラス台座2が固定され、該台座2上にシリコン半導
体チップ3が陽極接合により固定してある。半導体チッ
プ3は下面中心部を凹状として薄肉のダイヤフラム部3
1としてあり、該ダイヤフラム部31の上面に圧力セン
サを構成する歪みゲージが拡散形成してある。ダイヤフ
ラム部31の背後の台座2上面との間の密閉空間Sは真
空となっている。
2. Description of the Related Art FIG. 3 shows the structure of a conventional semiconductor pressure sensor. In a closed case 1, a rectangular block-shaped glass pedestal 2 is fixed on a bottom wall surface, and a silicon semiconductor chip 3 is mounted on the pedestal 2. It is fixed by anodic bonding. The semiconductor chip 3 has a thin diaphragm portion 3 with its lower center portion being concave.
The strain gauge constituting the pressure sensor is diffused and formed on the upper surface of the diaphragm portion 31. The closed space S between the upper surface of the pedestal 2 behind the diaphragm 31 is evacuated.

【0003】上記ケース1の頂壁には圧力導入孔15が
貫通形成されて、これを経て大気圧がケース1内に導入
されている。しかして、大気圧の変動に応じてダイヤフ
ラム部31が変形し、歪みゲージより絶対大気圧に応じ
た信号出力が得られる。かかる構造は例えば特開昭64
−431号公報に開示されている。
A pressure introduction hole 15 is formed through the top wall of the case 1, through which atmospheric pressure is introduced into the case 1. Thus, the diaphragm section 31 is deformed in accordance with the fluctuation of the atmospheric pressure, and a signal output corresponding to the absolute atmospheric pressure is obtained from the strain gauge. Such a structure is disclosed in, for example,
-431.

【0004】[0004]

【発明が解決しようとする課題】ところで、上記従来の
センサ構造では、大気中の汚染物質や水等が圧力導入孔
15より直接半導体チップ3上に到達して付着し、特性
劣化を起し易いという問題があった。また、圧力導入孔
15を経て光が直接半導体チップ3に入射してこれによ
っても特性劣化のおそれがあった。
By the way, in the above-mentioned conventional sensor structure, pollutants and water in the air reach the semiconductor chip 3 directly from the pressure introducing hole 15 and adhere to the semiconductor chip 3 to easily cause deterioration of characteristics. There was a problem. In addition, light directly enters the semiconductor chip 3 via the pressure introducing hole 15, and there is a possibility that the characteristics may be degraded.

【0005】本発明はかかる課題を解決するもので、汚
染物質等の付着が防止されるとともに、入射光線による
劣化もない半導体圧力センサを提供することを目的とす
る。
An object of the present invention is to provide a semiconductor pressure sensor which can prevent such contaminants from adhering and which is not deteriorated by an incident light beam.

【0006】[0006]

【課題を解決するための手段】本発明は上記目的に鑑み
てなされたものであり、 薄肉のダイヤフラム部13の上
に歪みゲージを有する半導体チップ3と、この半導体
チップ3が固定されて上記ダイヤフラム部31の下面と
の間に密閉空間Sを形成する台座2と、この台座2を配
置固定するための領域131を設けた内壁面13を有す
閉鎖空間を有する閉鎖ケース1とを備え、上記内壁面
13の上記台座配置領域131と異なる領域に上記閉鎖
ケース1を唯一貫通して上記圧力導入孔15が形成さ
れ、当該圧力導入孔15の開口が上記半導体チップ3の
上記歪ゲージを有する面が向く方向と同じ方向を向きか
つ上記閉鎖空間内の上記内壁面14に対向するように配
置されていることを特徴とする。
SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned object.
On the thin-walled diaphragm 13
A semiconductor chip 3 having a strain gauge to the surface, the lower surface of the diaphragm portion 31 the semiconductor chip 3 is fixed
And a closed case 1 having a closed space having an inner wall surface 13 provided with an area 131 for arranging and fixing the pedestal 2. The above-mentioned closure in an area different from the arrangement area 131
The pressure introducing hole 15 is formed only through the case 1.
The opening of the pressure introducing hole 15 is
Asked toward the same direction as the direction toward the surface having the strain gauge
Are arranged so as to face the inner wall surface 14 in the closed space.
It is characterized by being placed.

【0007】[0007]

【作用】上記構成において、圧力導入孔15は半導体チ
ップ3を設けたのと同じ内壁面13の台座配置領域13
1と異なる領域に閉鎖ケース1を唯一貫通して形成さ
れ、この圧力導入孔15の開口が半導体チップ3の歪ゲ
ージを有する面が向く方向と同じ方向を向きかつ閉鎖空
間内の内壁面14に対向するように配置されているか
ら、圧力導入孔15より汚染物質や水等が侵入しても、
これらは半導体チップ3に対向する内壁面14に直接付
着あるいは衝突する。したがって半導体チップ3へ到達
する確率は低い。
In the above configuration, the pressure introducing hole 15 is formed in the pedestal arrangement region 13 of the inner wall surface 13 where the semiconductor chip 3 is provided.
1 only through the closure case 1 in an area different from
The opening of the pressure introducing hole 15 is a strain gauge of the semiconductor chip 3.
Same direction toward hunger and thirst closing sky to the direction in which the face is the surface having the over-di
Since that is disposed so as to face the inner wall surface 14 in between, it is pollutants or water from the pressure introducing hole 15 is penetrated,
These directly adhere to or collide with the inner wall surface 14 facing the semiconductor chip 3. Therefore, the probability of reaching the semiconductor chip 3 is low.

【0008】また、圧力導入孔15より入射する光も、
半導体チップ3に対向する内壁面14でいったん反射
し、あるいは他の内壁面で数回反射して半導体チップ3
に至るから、チップ3上の素子特性への影響は極めて小
さい。
Also, the light incident from the pressure introducing hole 15 is
The semiconductor chip 3 reflects once on the inner wall surface 14 facing the semiconductor chip 3 or several times on other inner wall surfaces.
, The influence on the element characteristics on the chip 3 is extremely small.

【0009】[0009]

【実施例】図1、図2において、閉鎖ケース1は下側容
器11と、これを覆って開口縁をレジンボンドで密着固
定された蓋体12とより構成され、下側容器11は全体
が厚肉で、その内壁面13は中心部が深い矩形の凹所1
31となっている。この凹所131には底面に近い四辺
の側壁に内方へ突出するガイド用凸部132が形成して
あり、これら凸部132に外周を近接せしめて、凹所底
面に矩形ブロック状のガラス台座2がレジンボンドで接
合固定してある。該台座2の上面には同径のシリコン半
導体チップ3が陽極接合により固定され、上記台座2は
半導体チップ3に近い熱膨張係数を有している。
1 and 2, a closed case 1 is composed of a lower container 11 and a lid 12 which covers the lower case 11 and whose opening edge is tightly fixed with a resin bond. Thick, inner wall 13 has a rectangular recess 1 with a deep center.
It is 31. The concave portion 131 has guide convex portions 132 projecting inward on four side walls close to the bottom surface. The outer periphery is brought close to these convex portions 132, and a rectangular block-shaped glass pedestal is formed on the concave bottom surface. 2 is bonded and fixed with a resin bond. A silicon semiconductor chip 3 of the same diameter is fixed to the upper surface of the pedestal 2 by anodic bonding, and the pedestal 2 has a thermal expansion coefficient close to that of the semiconductor chip 3.

【0010】半導体チップ3は中心部の下面を凹状とし
て薄肉のダイヤフラム部31としてあり、このダイヤフ
ラム部31上面に歪みゲージが拡散形成してある。この
ダイヤフラム部31下方の台座2上面との間の密閉空間
Sは真空としてある。
The semiconductor chip 3 has a thin diaphragm portion 31 with a concave lower surface at the center portion, and a strain gauge is formed on the upper surface of the diaphragm portion 31 by diffusion. The closed space S between the upper surface of the pedestal 2 below the diaphragm 31 is evacuated.

【0011】上記凹所131を囲む内壁面13外周部は
上記半導体チップ3の上面とほぼ同一高さとなってお
り、かかる内壁面13上の三箇所に端子板41,42,
43が埋設されて、これら端子板41〜43と上記半導
体チップ3の間をボンディングワイヤ32で接続してあ
る。そして、端子板41に近い内壁面に、下側容器11
を下方へ貫通する圧力導入孔15が開口して大気圧が閉
鎖ケース1内に導入されている。
The outer peripheral portion of the inner wall surface 13 surrounding the recess 131 is substantially the same height as the upper surface of the semiconductor chip 3, and terminal plates 41, 42,
43 is buried, and these terminal plates 41 to 43 and the semiconductor chip 3 are connected by bonding wires 32. Then, the lower container 11 is placed on the inner wall surface near the terminal plate 41.
A pressure introducing hole 15 penetrating downward is opened, and atmospheric pressure is introduced into the closed case 1.

【0012】上記半導体チップ3の表面はシリコンゲル
33で覆ってあり、また、各端子板41〜43の端部は
それぞれ下側容器11外へ延出して外部端子411,4
21,431となっている。
The surface of the semiconductor chip 3 is covered with a silicon gel 33, and the ends of the terminal plates 41 to 43 extend to the outside of the lower container 11 so that the external terminals 411, 4
21,431.

【0013】上記構造の圧力センサにおいて、大気圧と
真空の差に応じて半導体チップ3のダイヤフラム部31
が変形し、大気の絶対圧に応じた出力信号が外部端子4
11〜431間に得られる。
In the pressure sensor having the above-described structure, the diaphragm 31 of the semiconductor chip 3 is changed according to the difference between the atmospheric pressure and the vacuum.
Is deformed and the output signal corresponding to the absolute pressure of the atmosphere is
Between 11 and 431.

【0014】圧力導入孔15は厚肉の下側容器11外周
部に形成してあるから充分な長さが確保され、これを経
て閉鎖ケース1内に汚染物質や水等が侵入することは効
果的に防止される。また、たとえ侵入しても、汚染物質
等は圧力導入孔15の開口に対向する蓋体12の内壁面
14に付着し、半導体チップ3上には殆ど到達しない。
Since the pressure introducing hole 15 is formed in the outer peripheral portion of the thick lower container 11, a sufficient length is ensured, and it is effective that contaminants, water and the like enter the closed case 1 through this. Is prevented. Even if it enters, the contaminants and the like adhere to the inner wall surface 14 of the lid 12 facing the opening of the pressure introducing hole 15 and hardly reach the semiconductor chip 3.

【0015】また、外光も、長い圧力導入孔15で閉鎖
ケース1内への直接入射が防止されるとともに、たとえ
ケース1内に入射しても、蓋体12の内壁面14でいっ
たん反射して弱められるから、半導体チップ3に到達し
てもセンサ機能を損なうことはない。
External light is also prevented from directly entering the closed case 1 by the long pressure introducing hole 15, and even if it enters the case 1, it is once reflected by the inner wall surface 14 of the lid 12. The sensor function is not impaired even when the semiconductor chip 3 is reached.

【0016】[0016]

【0017】なお、半導体センサ3を覆うシリコンゲル
33は特には必要としない。
The silicon gel 33 covering the semiconductor sensor 3 is not particularly required.

【0018】[0018]

【発明の効果】以上の如く、本発明の半導体圧力センサ
によれば、圧力導入孔より侵入する汚染物質や光によっ
てセンサ機能が損なわれることはない。
As described above, according to the semiconductor pressure sensor of the present invention, the sensor function is not impaired by contaminants or light entering from the pressure introducing hole.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の一実施例を示すセンサの全体断面図で
ある。
FIG. 1 is an overall sectional view of a sensor showing one embodiment of the present invention.

【図2】センサの部分破断平面図である。FIG. 2 is a partially broken plan view of a sensor.

【図3】従来例を示すセンサの概略断面図である。 FIG. 3 is a schematic sectional view of a sensor showing a conventional example.

【符号の説明】[Explanation of symbols]

1 閉鎖ケース 13 内壁面 15 圧力導入孔 2 台座 3 半導体チップ DESCRIPTION OF SYMBOLS 1 Closed case 13 Inner wall surface 15 Pressure introduction hole 2 Pedestal 3 Semiconductor chip

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 薄肉のダイヤフラム部の上面に歪みゲー
ジを有する半導体チップと、この半導体チップが固定さ
れて上記ダイヤフラム部の下面との間に密閉空間を形成
する台座と、この台座を配置固定するための領域を設け
た内壁面を有する閉鎖空間を有する閉鎖ケースとを備
え、上記内壁面の上記台座配置領域と異なる領域に上記
閉鎖ケースを唯一貫通して上記圧力導入孔が形成され、
当該圧力導入孔の開口が上記半導体チップの上記歪みゲ
ージを有する面が向く方向と同じ方向を向きかつ上記閉
鎖空間内の上記内壁面に対向するように配置され、 前記閉鎖ケース内の内壁面において、上記台座配置領域
は凹部となっており、この凹部は閉鎖ケースの内部から
外部へ延びる側面部と、底面部とを有し、これら側面部
と底面部との接続する領域に前記凹部内方へ突出する凸
部を備え、前記底面部に前記台座が固定されるものであ
り、前記凹部周辺の前記閉鎖ケース内の内壁面上に半導
体チップとボンディングワイヤにて電気接続する電極部
が形成されており、前記凹部に形成された凸部により前
記台座と前記凹部の側面部との間に空間が形成 されてい
ることを特徴とする半導体圧力センサ。
1. A semiconductor chip having a strain gauge on an upper surface of a thin diaphragm portion, a pedestal to which the semiconductor chip is fixed to form a closed space between the semiconductor chip and a lower surface of the diaphragm portion, and the pedestal arranged and fixed. A closed case having a closed space having an inner wall surface provided with an area for the, the pressure introduction hole is formed only through the closed case in a region different from the pedestal arrangement region of the inner wall surface,
Opening of the pressure introducing hole is arranged so as to face the inner wall surface of the strain gauge in the same direction as the direction toward the surface having an orientation and the closed space of the semiconductor chip, the inner wall surface in said closed casing In the above pedestal arrangement area
Is a concave part, and this concave part is
A side portion extending to the outside and a bottom portion;
A protrusion protruding inward into the recess in a region where the bottom and the bottom connect.
Part, and the base is fixed to the bottom part.
And a semi-conductive member on the inner wall surface in the closed case around the concave portion.
Electrode part electrically connected to body chip by bonding wire
Are formed, and the convex portion formed in the concave portion is
A semiconductor pressure sensor, wherein a space is formed between the pedestal and the side surface of the recess .
JP4079178A 1992-02-28 1992-02-28 Semiconductor pressure sensor Expired - Lifetime JP3004119B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4079178A JP3004119B2 (en) 1992-02-28 1992-02-28 Semiconductor pressure sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4079178A JP3004119B2 (en) 1992-02-28 1992-02-28 Semiconductor pressure sensor

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP25750299A Division JP3233136B2 (en) 1999-09-10 1999-09-10 Semiconductor pressure sensor

Publications (2)

Publication Number Publication Date
JPH05240723A JPH05240723A (en) 1993-09-17
JP3004119B2 true JP3004119B2 (en) 2000-01-31

Family

ID=13682729

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4079178A Expired - Lifetime JP3004119B2 (en) 1992-02-28 1992-02-28 Semiconductor pressure sensor

Country Status (1)

Country Link
JP (1) JP3004119B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002372473A (en) * 2001-04-12 2002-12-26 Fuji Electric Co Ltd Semiconductor-sensor housing container and method of manufacturing the same as well as semiconductor sensor device
JP2012207931A (en) * 2011-03-29 2012-10-25 Omron Corp Pressure sensor package

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63175736A (en) * 1987-01-16 1988-07-20 Hitachi Ltd Semiconductor pressure sensor
JPS6461631A (en) * 1987-09-02 1989-03-08 Hitachi Ltd Semiconductor pressure transducer
JPH0238831A (en) * 1988-07-28 1990-02-08 Nec Corp Stem for semiconductor

Also Published As

Publication number Publication date
JPH05240723A (en) 1993-09-17

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