JPS63175736A - Semiconductor pressure sensor - Google Patents

Semiconductor pressure sensor

Info

Publication number
JPS63175736A
JPS63175736A JP602187A JP602187A JPS63175736A JP S63175736 A JPS63175736 A JP S63175736A JP 602187 A JP602187 A JP 602187A JP 602187 A JP602187 A JP 602187A JP S63175736 A JPS63175736 A JP S63175736A
Authority
JP
Japan
Prior art keywords
pressure
casing
measured
semiconductor
pressure sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP602187A
Other languages
Japanese (ja)
Inventor
Hitoshi Ishikawa
石川 人志
Atsushi Miyazaki
敦史 宮崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Hitachi Automotive Systems Engineering Co Ltd
Original Assignee
Hitachi Automotive Engineering Co Ltd
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Automotive Engineering Co Ltd, Hitachi Ltd filed Critical Hitachi Automotive Engineering Co Ltd
Priority to JP602187A priority Critical patent/JPS63175736A/en
Publication of JPS63175736A publication Critical patent/JPS63175736A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To protect a semiconductor strain gauge from a harmful body by structuring an intake for pressure to be measured that members holed shifting in center from each other are inserted into the pressure intake from both sides without aligning both holes with each other while a space is formed in the middle. CONSTITUTION:The pressure intake 12 is formed in a 2nd casing 8 and the members 15 and 16 which are holed shifting in center from each other are inserted into the pressure intake 12 bored in a 2nd casing 8 without aligning the holes 13 and 14 with each other so that the space is formed in the middle, thus forming the intake for pressure to be measured. Further, a taper 17 is provided on the measured pressure intake of the casing 8 on the side of a measurement chamber. When the pressure Pi to be measured is applied, the vapor of gasoline contained in medium whose pressure is to be measured strikes on the member 15 first in the case of entering the inside through the hole 14 of the member 16 and then enters the pressure measurement chamber through the hole 13, so the vapor is liquefied and hard to enter the pressure chamber and it is easily discharged by liquefying of the vapor.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体式圧力センサに係り、特に自動車用圧力
センサとして好適な半導体式圧力センサに関するもので
ある。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor pressure sensor, and particularly to a semiconductor pressure sensor suitable as a pressure sensor for an automobile.

〔従来の技術〕[Conventional technology]

従来の半導体式圧力センサは、特開昭55−13756
4号公報に記載のように、被測定圧力導入口はストレー
ト構造になっていた。第4図は従来の半導体式圧力セン
サの構造図で、1は第1のケーシング、2は半導体歪ゲ
ージ支持台で、これの先端にU字型の底面がダイヤフラ
ム形に加工されたシリコンチップ3を固着し、支持台2
とシリコンチップ3との間の真空室を形成し、シリコン
チップ3のダイヤフラムの下面には半導体歪ゲージを形
成し、その表面を保護材4で保護しである。5は第1の
ケーシング1に支持台2を固着している接着剤、6は半
導体歪ゲージに金属線7で接続された半導体歪ゲージの
出力信号を外部に伝達する端子である。第1のケーシン
グ1には、下方に第2のケーシング8が接合部9で固着
してあり、半導体歪ゲージの下方に当る部分にストレー
ト構造の被測定圧力導入口10が設けられてあり、被測
定圧力Ps を半導体歪ゲージに印加する。第4図の構
造の半導体式圧力センサにおいては、被測定圧力P、は
、圧力導入口10がストレート構造になっているため、
圧力測定室内に被測定圧力媒体内に含まれているガソリ
ン等の液化物、気化物が入りやすい。また、液化物が入
ると、その液化物はケーシング8内の隅部11にたまり
やすく、これは、半導体式圧力センサを大地に対して斜
めに取り付けたときに特に発生しやすい。
The conventional semiconductor pressure sensor is disclosed in Japanese Patent Application Laid-open No. 55-13756.
As described in Publication No. 4, the pressure to be measured inlet had a straight structure. Figure 4 is a structural diagram of a conventional semiconductor pressure sensor, in which 1 is a first casing, 2 is a semiconductor strain gauge support, and at the tip of this is a silicon chip 3 whose U-shaped bottom is processed into a diaphragm shape. and fix it to support stand 2.
A vacuum chamber is formed between the silicon chip 3 and the silicon chip 3, a semiconductor strain gauge is formed on the lower surface of the diaphragm of the silicon chip 3, and its surface is protected with a protective material 4. Reference numeral 5 indicates an adhesive that fixes the support base 2 to the first casing 1, and reference numeral 6 indicates a terminal for transmitting an output signal of the semiconductor strain gauge connected to the semiconductor strain gauge by a metal wire 7 to the outside. A second casing 8 is fixed to the first casing 1 at a lower part thereof through a joint 9, and a pressure to be measured inlet 10 having a straight structure is provided at the lower part of the semiconductor strain gauge. A measurement pressure Ps is applied to the semiconductor strain gauge. In the semiconductor pressure sensor having the structure shown in FIG. 4, the pressure to be measured P is as follows because the pressure inlet 10 has a straight structure.
Liquefied or vaporized substances such as gasoline contained in the pressure medium to be measured easily enter the pressure measurement chamber. Further, if liquefied substances enter, the liquefied substances tend to accumulate in the corner 11 inside the casing 8, and this is particularly likely to occur when the semiconductor pressure sensor is installed diagonally with respect to the ground.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

上記従来技術は、被測定圧力媒体内に含有されるガソリ
ン等の液化物あるいは気化物が圧力測定室に入りやすく
、半導体歪ゲージの特性劣化の問題があった。
The above-mentioned conventional technology has a problem in that liquefied or vaporized substances such as gasoline contained in the pressure medium to be measured easily enter the pressure measurement chamber, resulting in deterioration of the characteristics of the semiconductor strain gauge.

本発明の目的は、半導体歪ゲージや接合部の接着剤を被
測定圧力媒体中に含有されるガソリン等の液化物、気化
物より保護することができる半導体式圧力センサを提供
することにある。
SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor pressure sensor that can protect a semiconductor strain gauge and an adhesive at a joint from liquefied and vaporized substances such as gasoline contained in a pressure medium to be measured.

〔問題点を解決するための手段〕[Means for solving problems]

上記目的は、第2のケーシングに設ける被測定圧力導入
口の構造を迷路形状とするとともに、終端形状をテーパ
として達成するようにした。
The above object is achieved by making the structure of the pressure inlet to be measured provided in the second casing into a labyrinth shape, and by making the end shape into a taper.

〔作用〕[Effect]

半導体式圧力センサの被測定圧力導入口を迷路形状にす
ることにより、被測定圧力媒体内に含有される液化物は
、圧力測定室内に侵入しにくくな番1、また、圧力導入
口を通る過程において、圧力媒体が壁面に触れる確率が
大きくなり、気化物は液化しやすくなり、液体として外
部へ逃がしてやることができる。さらに、圧力導入口の
圧力測定室側終端形状をテーパ状としたので、ケーシン
グ内にたまって液体が外部に出やすくなる。
By forming the measurement pressure inlet of the semiconductor pressure sensor into a labyrinth shape, the liquefied substance contained in the pressure medium to be measured is difficult to enter into the pressure measurement chamber, and the process of passing through the pressure introduction port is prevented. In this case, the probability that the pressure medium will come into contact with the wall surface increases, and the vaporized material becomes easier to liquefy, and can be released to the outside as a liquid. Furthermore, since the end of the pressure introduction port on the pressure measurement chamber side is tapered, the liquid that accumulates inside the casing can easily come out.

〔実施例〕〔Example〕

以下本発明を第1図〜第3図に示した実施例を用いて詳
細に説明する。
The present invention will be explained in detail below using the embodiments shown in FIGS. 1 to 3.

第1図は本発明の半導体式圧力センサの一実施例を示す
構造図である。第1図において、1は第1のケーシング
、2は半導体歪ゲージ支持台、3はU字型の底面がダイ
ヤフラム形に加工され、その下面に半導体歪ゲージが形
成されたシリコンチップ、4は保護材、5は第1のケー
シング1に支持台2を固着している接着剤、6は端子、
7は金属線、8は第20ケーシング、9は第1のケーシ
ング1と第2のケーシング8との接合部で、これらは従
来と同様である。ところで、第1図に示した実施例にお
いては、第2のケーシング8に設けた被測定圧力導入口
の形が異なる。すなわち、第2のケーシング8に圧力導
入穴12をあけ、これに両側からそれぞれ孔13.14
を中心をずらしてあけた部材15.16を中間に空間が
できるようにして、しかも孔13.14とが重なり合わ
ないように挿入した構成の被測定圧力導入口とした。
FIG. 1 is a structural diagram showing an embodiment of the semiconductor pressure sensor of the present invention. In Figure 1, 1 is a first casing, 2 is a semiconductor strain gauge support, 3 is a silicon chip whose U-shaped bottom is processed into a diaphragm shape, and a semiconductor strain gauge is formed on the bottom surface, and 4 is a protection 5 is the adhesive that fixes the support base 2 to the first casing 1; 6 is the terminal;
7 is a metal wire, 8 is a 20th casing, and 9 is a joint between the first casing 1 and the second casing 8, which are the same as in the conventional case. By the way, in the embodiment shown in FIG. 1, the shape of the pressure to be measured inlet provided in the second casing 8 is different. That is, a pressure introduction hole 12 is formed in the second casing 8, and holes 13 and 14 are inserted into the second casing 8 from both sides.
The members 15 and 16, which are opened with their centers shifted from each other, are inserted to create a space in the middle and are inserted so that the holes 13 and 14 do not overlap with each other to form a pressure to be measured inlet.

さらに、第2のケーシング8のこの被測定圧力導入口の
測定室側にはテーパ17を設けた。
Furthermore, a taper 17 was provided on the measurement chamber side of this measured pressure inlet of the second casing 8.

上記した構成によれば、被測定圧力P1を印加したとき
、被測定圧力媒体内に含まれるガソリン等の気化物は1
部材16の孔14よ゛り入ったとき、一端部材15にぶ
つかり、その後孔13より圧力測定室に入るようになる
ので、その間に液化して圧力測定室に侵入しにくくなり
、さらに液化することにより外部へ放出しやすくなる。
According to the above configuration, when the pressure to be measured P1 is applied, the vaporized substance such as gasoline contained in the pressure medium to be measured is 1
When it enters the hole 14 of the member 16, it collides with the member 15 at one end, and then enters the pressure measurement chamber through the hole 13. During this time, it liquefies, making it difficult for it to enter the pressure measurement chamber, and further liquefying. This makes it easier to release it to the outside.

また、第2のケーシング8の被測定圧力導入口端面には
テーパ17が設けであるので、液化物が圧力測定室内に
たまることがない。
Furthermore, since the second casing 8 is provided with a taper 17 on the end face of the pressure to be measured inlet, liquefied substances do not accumulate in the pressure measurement chamber.

なお、上記した実施例では、9JS2のケーシング8に
圧力導入穴12をあけ、ここに、それぞれ孔13.14
をあけた部材15.16を挿入したが。
In addition, in the above-mentioned embodiment, the pressure introduction hole 12 is made in the casing 8 of 9JS2, and the holes 13 and 14 are inserted here, respectively.
I inserted the parts 15 and 16 that had been opened.

部材15.16は第2のケーシング8にモールドによっ
て形成するようにしてもよい。
The parts 15, 16 can also be molded into the second casing 8.

第2図は第1図の接合部9の他の実施例を示す部分断面
図である。第1のケーシング1と第2のケーシング8と
の接合部9は、圧力測定室内の印加圧力及び温度変化に
よる接着剤とモールド樹脂と熱膨張差により発生する熱
応力などによる劣化があってはならない。これに対して
従来は、接合部分に段を設けて接着剤による接看面積を
広くとることで接差強度の増大をはかつていた。しかし
、これだけでは十分でなく、そのため、第2図では第1
のケーシング1の第2のケーシング8との接合部の中央
部に上端部と下端部に逃げ溝21を設けた凸部22を設
け、第2のケーシング8の第1のケーシング1との接合
部の中央部には凸部22が嵌合する凹部23を設け、第
1のケーシング1と第2のケーシング8とを接合部に接
着剤30を塗布して第2図に示すように接合するように
した。
FIG. 2 is a partial sectional view showing another embodiment of the joint portion 9 of FIG. 1. The joint 9 between the first casing 1 and the second casing 8 must not deteriorate due to thermal stress caused by the difference in thermal expansion between the adhesive and mold resin due to applied pressure and temperature changes in the pressure measurement chamber. . On the other hand, in the past, the joint strength was increased by providing a step at the joint part to increase the contact area with the adhesive. However, this is not enough, so in Figure 2 the first
A convex part 22 having relief grooves 21 at the upper and lower ends is provided in the center of the joint part of the casing 1 with the second casing 8, and the joint part of the second casing 8 with the first casing 1 is provided. A recess 23 into which the protrusion 22 fits is provided in the center, and the first casing 1 and the second casing 8 are joined together as shown in FIG. 2 by applying an adhesive 30 to the joint. I made it.

このようにすれば、機密性保持の耐久性を向上させるこ
とができる。
In this way, the durability of maintaining confidentiality can be improved.

また、第2図に代えて第3図に示す実施例の如く、第1
のケーシング1の接合部は、折り曲げ部に逃げ溝24を
有するL字型に構成し、第2のケーシング8の接合部は
、第1のケーシング1のL字型の接合部に嵌合するL字
型に構成し、両者の接合部を接着剤30で接合するよう
にしてもよく、同様の効果が得られる。
In addition, as in the embodiment shown in FIG. 3 instead of FIG.
The joint part of the casing 1 is formed into an L-shape having an escape groove 24 at the bent part, and the joint part of the second casing 8 is formed into an L-shape that fits into the L-shaped joint part of the first casing 1. The same effect can be obtained by forming a letter-shaped structure and joining the joint portions of the two with adhesive 30.

〔発明の効果〕〔Effect of the invention〕

以上説明したように、本発明によれば、半導体歪ゲージ
を被測定圧力媒体中に含有する有害な液化物、気化物か
ら保護することができ、さらに逃げ溝内に接着剤が充填
されることになるので、ケーシング同志の接−着力が強
力になるという効果がある。
As explained above, according to the present invention, it is possible to protect a semiconductor strain gauge from harmful liquefied substances and vaporized substances contained in the pressure medium to be measured, and furthermore, the escape groove can be filled with adhesive. This has the effect of increasing the adhesive force between the casings.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の半導体式圧力センサの一実施例を示す
構造図、第2図は第1図の接合部の他の実施例を示す部
分断面図、第3図は第2図のさらに他の実施例を示す部
分断面図、第4図は従来の半導体式圧力センサの構造図
である。
FIG. 1 is a structural diagram showing one embodiment of the semiconductor pressure sensor of the present invention, FIG. 2 is a partial sectional view showing another embodiment of the joint portion of FIG. 1, and FIG. FIG. 4, a partial cross-sectional view showing another embodiment, is a structural diagram of a conventional semiconductor pressure sensor.

Claims (1)

【特許請求の範囲】 1、半導体歪ゲージを表面に形成したU字形のシリコン
チップを半導体歪ゲージ支持台を介して第1のケーシン
グに固着し、該第1のケーシングを第2のケーシングに
固着し、該第2のケーシングに被測定圧力導入口を設け
てなる半導体式圧力センサにおいて、前記被測定圧力導
入口の構造を圧力導入穴内に両側からそれぞれ孔を中心
をずらしてあけた部材を中間に空間ができるようにして
、しかも前記両孔が重なり合わないように挿入して構成
した構造とし、該被測定圧力導入口の圧力測定室側の前
記第2のケーシングにはテーパを設けた構成としたこと
を特徴とする半導体式圧力センサ。 2、前記第1のケーシングと前記第2のケーシングの接
合部は直交する少なくとも2平面よりなり、前記直交す
る部分に接着剤の逃げ溝を有する構成としてあつて、前
記接着剤で接着した構成としてある特許請求の範囲第1
項記載の半導体式圧力センサ。
[Claims] 1. A U-shaped silicon chip with a semiconductor strain gauge formed on its surface is fixed to a first casing via a semiconductor strain gauge support, and the first casing is fixed to a second casing. In the semiconductor type pressure sensor in which the second casing is provided with a pressure to be measured inlet, the structure of the to-be-measured pressure inlet is made by inserting a member in which holes are opened from both sides of the pressure inlet hole with the center shifted from each other. The second casing on the pressure measurement chamber side of the pressure to be measured inlet is tapered. A semiconductor pressure sensor characterized by the following. 2. The joint between the first casing and the second casing is composed of at least two orthogonal planes, and the orthogonal part has an escape groove for an adhesive, and the joint is bonded with the adhesive. Claim 1
Semiconductor pressure sensor described in section.
JP602187A 1987-01-16 1987-01-16 Semiconductor pressure sensor Pending JPS63175736A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP602187A JPS63175736A (en) 1987-01-16 1987-01-16 Semiconductor pressure sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP602187A JPS63175736A (en) 1987-01-16 1987-01-16 Semiconductor pressure sensor

Publications (1)

Publication Number Publication Date
JPS63175736A true JPS63175736A (en) 1988-07-20

Family

ID=11627034

Family Applications (1)

Application Number Title Priority Date Filing Date
JP602187A Pending JPS63175736A (en) 1987-01-16 1987-01-16 Semiconductor pressure sensor

Country Status (1)

Country Link
JP (1) JPS63175736A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05240723A (en) * 1992-02-28 1993-09-17 Nippondenso Co Ltd Semiconductor pressure sensor
US6604430B2 (en) 2001-04-12 2003-08-12 Fuji Electric Co., Ltd. Pressure sensor and pressure sensor housing having a protective portion
US6651508B2 (en) 2000-11-27 2003-11-25 Denso Corporation Pressure sensor having semiconductor sensor chip
JP2005043367A (en) * 2003-07-25 2005-02-17 Robert Bosch Gmbh Cover for casing of sensor configuration group equipped with pressure sensor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05240723A (en) * 1992-02-28 1993-09-17 Nippondenso Co Ltd Semiconductor pressure sensor
US6651508B2 (en) 2000-11-27 2003-11-25 Denso Corporation Pressure sensor having semiconductor sensor chip
US6604430B2 (en) 2001-04-12 2003-08-12 Fuji Electric Co., Ltd. Pressure sensor and pressure sensor housing having a protective portion
JP2005043367A (en) * 2003-07-25 2005-02-17 Robert Bosch Gmbh Cover for casing of sensor configuration group equipped with pressure sensor

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