JP2988045B2 - Bare chip structure and bare chip mounting structure - Google Patents
Bare chip structure and bare chip mounting structureInfo
- Publication number
- JP2988045B2 JP2988045B2 JP3234307A JP23430791A JP2988045B2 JP 2988045 B2 JP2988045 B2 JP 2988045B2 JP 3234307 A JP3234307 A JP 3234307A JP 23430791 A JP23430791 A JP 23430791A JP 2988045 B2 JP2988045 B2 JP 2988045B2
- Authority
- JP
- Japan
- Prior art keywords
- bare chip
- bare
- main surface
- mounting structure
- wiring board
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73257—Bump and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
- Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、各種電子機器の回路構
成用に使用されるプリント板ユニットの半導体チップ実
装構造に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor chip mounting structure of a printed circuit board unit used for circuit construction of various electronic devices.
【0002】最近、ハンディータイプの端末機,ワード
プロセッサー,パーソナルコンピューター等の電子機器
は更に小型化と多くの機能が要求されるに伴い、これら
の機器に装着されるプリント板ユニットには多数個の半
導体装置を高密度に実装することが必要となっている。2. Description of the Related Art Recently, as electronic devices such as hand-held terminals, word processors, personal computers, and the like are required to be further miniaturized and have many functions, a large number of semiconductor devices are required for a printed board unit mounted on these devices. It is necessary to mount devices at high density.
【0003】そのため、プリント板ユニットの小型化が
はかれる半導体チップ本体(以下ベアチップと略称す
る)をプリント配線基板(以下配線基板と略称する)へ
直接表面実装しているが、これらベアチップを立体的に
高密度実装することができる新しい半導体チップの実装
構造が要求されている。For this reason, a semiconductor chip body (hereinafter abbreviated as a bare chip) for miniaturizing a printed board unit is directly surface-mounted on a printed wiring board (hereinafter abbreviated as a wiring board). There is a demand for a new semiconductor chip mounting structure capable of high-density mounting.
【0004】[0004]
【従来の技術】従来広く使用されている半導体の実装構
造は、図4(b) に示すように例えば四方向フラットリー
ドパッケージタイプ(QFP)の半導体装置2において
は、半導体素子2-3 と導通してパッケージ2-1 の側面よ
り突出させて配列した複数本のリード2-2 と対応する位
置に微細幅のフットパターン1-1 を複数個枡形に配列し
た配線基板1に、前記半導体装置2のリード2-2 と当該
フットパターン1-1 を位置合わせして配線基板1に半導
体装置2を載置し、リフローボンディング等により前記
フットパターン1-1 に施した図示していない半田を溶融
して、図4(a) に示すように配線基板1の主面に多数個
の半導体装置2が表面実装されている。2. Description of the Related Art As shown in FIG. 4 (b), in a semiconductor device 2 of a four-way flat lead package type (QFP), for example, as shown in FIG. The semiconductor device 2 is mounted on a wiring board 1 in which a plurality of fine-width foot patterns 1-1 are arranged in a matrix at positions corresponding to a plurality of leads 2-2 arranged so as to protrude from the side surface of the package 2-1. The semiconductor device 2 is mounted on the wiring board 1 by aligning the lead 2-2 with the foot pattern 1-1, and solder (not shown) applied to the foot pattern 1-1 is melted by reflow bonding or the like. As shown in FIG. 4A, a large number of semiconductor devices 2 are surface-mounted on the main surface of the wiring board 1.
【0005】[0005]
【発明が解決しようとする課題】以上説明した従来の半
導体装置の実装構造で問題となるのは、第4図(b) に示
すように配線基板1の表面に形成されたフットパターン
1-1 と半導体素子2-3 を覆ったパッケージ2-1 のリード
2-2 を接合することにより多数個の半導体装置2が実装
されているから、この実装される半導体装置2の外形寸
法はパッケージ2-1 により大きくなって実装される配線
基板1も大きくせねばならぬので装置の小型化を阻むと
いう問題が生じている。The problem with the conventional semiconductor device mounting structure described above is that the foot pattern formed on the surface of the wiring board 1 as shown in FIG.
1-1 and lead of package 2-1 covering semiconductor element 2-3
Since a large number of semiconductor devices 2 are mounted by bonding 2-2, the external dimensions of the semiconductor device 2 to be mounted must be larger due to the package 2-1 and the wiring board 1 to be mounted must be larger. Therefore, there is a problem that miniaturization of the apparatus is hindered.
【0006】また、半導体素子2-3 を覆うパッケージ2-
1 により半導体装置2が重くなってプリント板ユニット
の重量が増加するという問題も生じていた。本発明は上
記のような問題点に鑑み、ベアチップを積層して配線基
板に実装することによりプリント板ユニットの小型化と
軽量化をはかることができる新しい半導体チップの実装
構造の提供を目的とする。Further, a package 2 which covers the semiconductor element 2-3 is provided.
1 causes the problem that the semiconductor device 2 becomes heavy and the weight of the printed board unit increases. SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and has as its object to provide a new semiconductor chip mounting structure capable of reducing the size and weight of a printed board unit by stacking bare chips and mounting them on a wiring board. .
【0007】[0007]
【課題を解決するための手段】上記目的を達成するため
に、請求項に記載の発明は図1に示すように、ベアチッ
プの一方の主面に設けられた接続端子を除く基板面に絶
縁膜を施して、前記接続端子に接続した導体パターンを
上記絶縁膜の表面に形成して前記ベアチップの他方の主
面に延在せしめたベアチップベアチップを提供する。ま
た図2に示すように、配線基板上に一方の主面から他方
の主面に表裏導通導体を設け た貫通孔を有する複数の
ベアチップを積層してなり、隣接した上方に位置するベ
アチップの貫通孔下面の接続端子を下方に位置するベア
チップ上面の接続端子に直接接続すると共に、ベアチッ
プ毎に独立した外部リードを設けて配線基板との接続を
行うようにしたベアチップを提供する。 [MEANS FOR SOLVING THE PROBLEMS] To achieve the above object
The invention described in the claims, as shown in FIG.
On the board surface except for the connection terminals provided on one main surface of the
The conductor pattern connected to the connection terminal is formed by applying an edge film.
The other main part of the bare chip formed on the surface of the insulating film
A bare chip is provided on a surface. Ma
As shown in FIG. 2, one main surface is placed on the other side of the wiring board.
A plurality of through-holes provided with conducting conductors on the main surface of the front and back
Bare chips are stacked, and the adjacent upper
Bare with connection terminal on the underside of through hole of Achip
Connect directly to the connection terminals on the top of the chip and
Independent external leads are provided for each
Provide a bare chip to be performed.
【0008】[0008]
【作用】本発明では、ベアチップ12の基板12-1表面に絶
縁膜13を施して、その絶縁膜13より露出した接続端子12
-1aと導通して他方の面の当該接続端子12-1aと対応す
る位置まで導体パターン14を配線し、この導体パターン
14と他のベアチップ12に形成された接続端子12-1aを接
続することで複数個が積層されるから、その最下層に位
置する該ベアチップ12の該接続端子12-1aとプリント配
線基板1のフットパターン1-1 と接続することにより、
配線基板1に形成されたそれぞれのフットパターン1-1
に対して複数個のベアチップ12が実装されてプリント板
ユニットの小型化と軽量化をはかることが可能となる。According to the present invention, an insulating film 13 is formed on the surface of the substrate 12-1 of the bare chip 12, and the connection terminals 12 exposed from the insulating film 13 are formed.
-1a and the conductor pattern 14 is wired to a position corresponding to the connection terminal 12-1a on the other surface.
14 and the connection terminals 12-1a formed on the other bare chip 12 are connected to each other, so that a plurality of the connection terminals 12-1a are connected to each other. By connecting with foot pattern 1-1,
Each foot pattern 1-1 formed on the wiring board 1
On the other hand, a plurality of bare chips 12 are mounted, so that the size and weight of the printed board unit can be reduced.
【0009】[0009]
【実施例】以下図1〜図3 について本発明の実施例を詳
細に説明する。図1は第一実施例による半導体チップの
実装構造を示す側断面図、図2は第二実施例の実装構造
を示す側断面図、図3は第二実施例に使用するベアチッ
プのスルーホール形成方法を説明する工程順側断面図を
示し、図中において、図4と同一部材には同一記号が付
してあるが、その他の12は第一実施例の実装構造に使用
するベアチップ,22は第二実施例の実装構造に使用する
ベアチップである。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below in detail with reference to FIGS. FIG. 1 is a side sectional view showing a mounting structure of a semiconductor chip according to a first embodiment, FIG. 2 is a side sectional view showing a mounting structure of a second embodiment, and FIG. 3 is a through hole formation of a bare chip used in the second embodiment. 4A and 4B are cross-sectional views in the order of steps for explaining the method. In the figure, the same members as those in FIG. 4 are denoted by the same reference numerals, but the other 12 is a bare chip used for the mounting structure of the first embodiment, and 22 is It is a bare chip used for the mounting structure of the second embodiment.
【0010】ベアチップ12は、図1に示すように単結晶
シリコン等よりなる薄い基板12-1の中央部に半導体素子
の集積回路を形成して、周縁に集積回路から引き出され
た複数個の接続端子12-1aが配設された半導体装置の素
子本体である。As shown in FIG. 1, a bare chip 12 is formed by forming an integrated circuit of a semiconductor element in the center of a thin substrate 12-1 made of single-crystal silicon or the like, and forming a plurality of connection parts drawn from the integrated circuit on the periphery. This is an element body of the semiconductor device in which the terminal 12-1a is provided.
【0011】上記部材を使用した第一実施例による半導
体チップの実装構造は、図1(a) に示すようにベアチッ
プ12の基板12-1の一方の面に形成された接続端子12-1a
を除く全表面に絶縁樹脂よりなる絶縁膜13を施すことに
より当該接続端子12-1aを露出させ、この絶縁膜13の表
面から露出した前記接続端子12-1aと導通させて当該接
続端子12-1aと対応する位置の他方の面までエポキシ系
の導電性塗料により導体パターン14を形成する。As shown in FIG. 1A, the mounting structure of the semiconductor chip according to the first embodiment using the above-described members is a connection terminal 12-1a formed on one surface of the substrate 12-1 of the bare chip 12.
The connection terminal 12-1a is exposed by applying an insulating film 13 made of an insulating resin to the entire surface except for the connection terminal 12-1a exposed from the surface of the insulating film 13 to make the connection terminal 12-1a conductive. A conductor pattern 14 is formed from an epoxy-based conductive paint to the other surface at a position corresponding to 1a.
【0012】そして、上記接続端子12-1aを同一方向に
して複数個のベアチップ12とTABによりリード12-2を
設けたベアチップ12' とを、導体パターン14と接続端子
12-1aまたはそれぞれの導体パターン14を接続してベア
チップ12,12' の積層体を形成し、この積層体の接続端
子12-1aを上向きにして最下層に位置する該ベアチップ
12' のボンディング等により配線されたリード12-2をプ
リント配線基板1のフットパターン1-1 へ結合すること
により実装する。The plurality of bare chips 12 and the bare chip 12 'provided with the leads 12-2 by TAB with the connection terminals 12-1a in the same direction are connected to the conductor pattern 14 and the connection terminals.
12-1a or the respective conductor patterns 14 are connected to form a laminated body of bare chips 12, 12 ', and the connection terminals 12-1a of the laminated body are directed upward, and the bare chip positioned at the lowermost layer is formed.
The lead 12-2 wired by bonding of 12 'or the like is mounted on the printed wiring board 1 by bonding it to the foot pattern 1-1.
【0013】また、図1(b) に示すように接続端子12-1
aを同一方向にして複数個の上記ベアチップ12を導体パ
ターン14で接続して積層し、この積層体の上記接続端子
12-1aを下向きにして最下層に位置する該ベアチップ12
の接続端子12-1a,または当該導体パターン14と配線基
板1のフットパターン1-1 を導電性接着剤15により結合
して実装する。Further, as shown in FIG.
a) in the same direction, a plurality of the bare chips 12 are connected and laminated by the conductor pattern 14, and the connection terminals of the laminate are
The bare chip 12 located on the lowermost layer with 12-1a facing downward
The connection terminal 12-1a or the conductor pattern 14 is connected to the foot pattern 1-1 of the wiring board 1 by a conductive adhesive 15 and mounted.
【0014】第二実施例に使用するベアチップ22の形成
方法は、図3(a) に示すように単結晶シリコンより例え
ば400μmの板厚に成形したベアチップの基板22-1の
一方の面にエッチングレジスト22-4を塗布し、表裏導通
を必要とする位置に例えば100μm径の当該エッチン
グレジスト22-4を除去して、真空槽内でエッチングによ
り図3(b) に示す如く100μm径で深さ320μmの
スルーホール22-1bを穿設し、図3(c) に示す如く前記
エッチングレジスト22-4を除去した後に、蒸着等により
スルーホール22-1b内に表裏導通導体22-1dを充填する
とともに入り口に150μm径の電極パッド22-1cを形
成する。The method of forming the bare chip 22 used in the second embodiment is as follows. As shown in FIG. 3 (a), one side of the bare chip substrate 22-1 formed from single crystal silicon to a thickness of, for example, 400 μm is etched. A resist 22-4 is applied, the etching resist 22-4 having a diameter of, for example, 100 μm is removed at a position where conduction between the front and back is required, and etching is performed in a vacuum chamber to a depth of 100 μm as shown in FIG. After forming a through hole 22-1b of 320 μm and removing the etching resist 22-4 as shown in FIG. 3 (c), the front and back conductive conductors 22-1d are filled in the through hole 22-1b by vapor deposition or the like. At the same time, an electrode pad 22-1c having a diameter of 150 μm is formed at the entrance.
【0015】そして、図3(d) に示すように表裏導通導
体22-1dが充填された基板22-1の下面,即ち電極パッド
22-1cに対して反対側の面を100μm研磨することに
より表裏導通導体22-1dの端面を露出させ、その後にこ
の基板22-1の表面に半導体素子の集積回路を形成してそ
れぞれの接続端子に複数本の微細なリードをATBによ
って配線するとともに、上記電極パッド22-1cの上,ま
たは表裏導通導体22-1dを端面に半田等による接続バン
プを形成している。Then, as shown in FIG. 3D, the lower surface of the substrate 22-1, which is filled with the front and back conductive conductors 22-1d, ie, the electrode pads
By polishing the surface opposite to 22-1c by 100 μm to expose the end surface of the front and back conductive conductor 22-1d, an integrated circuit of a semiconductor element is formed on the surface of the substrate 22-1, and each connection is made. A plurality of fine leads are wired to the terminals by ATB, and connection bumps made of solder or the like are formed on the electrode pads 22-1c or on the end surfaces of the front and back conductive conductors 22-1d.
【0016】このベアチップ22を使用した第二実施例に
よる半導体チップの実装構造は、図2に示すようにリー
ド22-2の配線側を同一方向にして表裏導通導体22-1dの
接続バンプ22-3により複数個のベアチップ22を接続して
積層し、この積層されたベアチップ22のリード22-2を上
向きにして最下層のベアチップ22を接着剤等により配線
基板1に固着して、各ベアチップ22のリード22-2をボン
ディング等により前記配線基板1のフットパターン1-1
に接続している。As shown in FIG. 2, the mounting structure of the semiconductor chip according to the second embodiment using the bare chip 22 is such that the wiring side of the lead 22-2 is in the same direction and the connection bump 22- A plurality of bare chips 22 are connected and laminated by 3 and the bare chips 22 of the lowermost layer are fixed to the wiring board 1 with an adhesive or the like with the leads 22-2 of the laminated bare chips 22 facing upward, and each bare chip 22 Lead 22-2 of the wiring substrate 1 by bonding or the like.
Connected to
【0017】[0017]
【発明の効果】以上の説明から明らかなように本発明に
よれば極めて簡単な構成で、配線基板に形成されたそれ
ぞれのフットパターンに対して複数個のベアチップが実
装されるからプリント板ユニットの小型化と軽量化をは
かることができる等の利点があり、著しい経済的及び、
信頼性向上の効果が期待できる半導体チップの実装構造
を提供することができる。As is apparent from the above description, according to the present invention, since a plurality of bare chips are mounted on each foot pattern formed on the wiring board with a very simple structure, the printed circuit board unit It has advantages such as downsizing and weight reduction, and is extremely economical and
It is possible to provide a semiconductor chip mounting structure that can be expected to improve reliability.
【図1】 本発明の第一実施例による半導体チップの実
装構造を示す拡大側断面図である。FIG. 1 is an enlarged side sectional view showing a mounting structure of a semiconductor chip according to a first embodiment of the present invention.
【図2】 第二実施例の実装構造を示す拡大側断面図で
ある。FIG. 2 is an enlarged side sectional view showing a mounting structure of a second embodiment.
【図3】 第二実施例に使用するベアチップのスルーホ
ール形成方法を説明する工程順側断面図である。FIG. 3 is a side sectional view illustrating a method of forming a through hole in a bare chip used in a second embodiment in the order of steps;
【図4】 従来の半導体実装構造を示す斜視図である。FIG. 4 is a perspective view showing a conventional semiconductor mounting structure.
1は配線基板、1-1 はフットパターン、12, 12',22はベ
アチップ、12-1, 22-1は基板、 12-1
a,22-1aは接続端子、12-2, 22-2はリード、13は絶縁
膜、14は導体パターン、15は導電性接着剤、22-1bはス
ルーホール22-1a、 22-1cは電極パッド、22-1
dは表裏導通導体、22-3は接続バンプ、22-4はエッチン
グレジスト、1 is a wiring board, 1-1 is a foot pattern, 12, 12 ', 22 are bare chips, 12-1, 22-1 are boards, 12-1
a and 22-1a are connection terminals, 12-2 and 22-2 are leads, 13 is an insulating film, 14 is a conductor pattern, 15 is a conductive adhesive, 22-1b is a through hole 22-1a, and 22-1c is a Electrode pad, 22-1
d is front and back conductive conductor, 22-3 is connection bump, 22-4 is etching resist,
Claims (4)
続端子を除く基板面に絶縁膜を施して、前記接続端子に
接続した導体パターンを上記絶縁膜の表面に形成して前
記ベアチップの他方の主面に延在せしめたことを特徴と
するベアチップの構造。 A contact provided on one main surface of a bare chip.
Apply an insulating film to the board surface except for the connection terminals, and
After forming the connected conductor pattern on the surface of the insulating film,
Characterized in that it extends to the other main surface of the bare chip.
The structure of the bare chip.
したベアチップの実装構造であって、 第1のベアチップの一方の主面に設けられた導体パター
ンと第2のベアチップの他方の主面の対応する位置に設
けられた導体パターンとを重ねて接続した形で配線基板
上に実装したことを特徴とするベアチップの実装構造。 2. A stack of a plurality of bare chips according to claim 1.
And a conductor pattern provided on one main surface of the first bare chip.
At the corresponding position on the other main surface of the second bare chip.
Wiring board in the form of a conductor pattern
A bare chip mounting structure characterized by being mounted on the above.
あって、 上記接続端子の設けられた一方の主面を上向きにして他
方の主面に延在された導体パターンを配線基板上にあら
かじめ形成されたフットパターンに接続することを特徴
とするベアチップの実装構造。 3. The bare chip mounting structure according to claim 1,
With the one main surface on which the connection terminals are provided facing upward and the other
The conductor pattern extended on the other main surface on the wiring board.
Features connection to a preformed foot pattern
The mounting structure of the bare chip.
に表裏導通導体を設けた貫通孔を有する複数のベアチッ
プを積層してなり、 隣接した上方に位置するベアチップの貫通孔下面の接続
端子を下方に位置するベアチップ上面の接続端子に直接
接続すると共に、 ベアチップ毎に独立した外部リードを設けて配線基板と
の接続を行うようにしたことを特徴とするベアチップの
実装構造。 4. The method according to claim 1 , wherein the first main surface and the second main surface are arranged on the wiring board.
A plurality of bear chips having through holes with front and back conductive conductors
Formed by laminating the up, connection of the through-hole lower surface of the bare chip located adjacent the upper
Directly connect the terminal to the connection terminal on the top of the bare chip located below
Connect and provide independent external leads for each bare chip to
Of bare chips, characterized in that the connection of
Mounting structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3234307A JP2988045B2 (en) | 1991-09-13 | 1991-09-13 | Bare chip structure and bare chip mounting structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3234307A JP2988045B2 (en) | 1991-09-13 | 1991-09-13 | Bare chip structure and bare chip mounting structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0575014A JPH0575014A (en) | 1993-03-26 |
| JP2988045B2 true JP2988045B2 (en) | 1999-12-06 |
Family
ID=16968953
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3234307A Expired - Lifetime JP2988045B2 (en) | 1991-09-13 | 1991-09-13 | Bare chip structure and bare chip mounting structure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2988045B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6667551B2 (en) | 2000-01-21 | 2003-12-23 | Seiko Epson Corporation | Semiconductor device and manufacturing thereof, including a through-hole with a wider intermediate cavity |
| US7214615B2 (en) | 2003-03-17 | 2007-05-08 | Seiko Epson Corporation | Method of manufacturing semiconductor device, semiconductor device, circuit substrate and electronic apparatus |
| US7233413B2 (en) | 2002-11-22 | 2007-06-19 | E. I. Du Pont De Nemours And Company | Gamut description and visualization |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1993023982A1 (en) * | 1992-05-11 | 1993-11-25 | Nchip, Inc. | Stacked devices for multichip modules |
| US5466634A (en) * | 1994-12-20 | 1995-11-14 | International Business Machines Corporation | Electronic modules with interconnected surface metallization layers and fabrication methods therefore |
| US6005778A (en) * | 1995-06-15 | 1999-12-21 | Honeywell Inc. | Chip stacking and capacitor mounting arrangement including spacers |
| US6693358B2 (en) | 2000-10-23 | 2004-02-17 | Matsushita Electric Industrial Co., Ltd. | Semiconductor chip, wiring board and manufacturing process thereof as well as semiconductor device |
| SG111069A1 (en) | 2002-06-18 | 2005-05-30 | Micron Technology Inc | Semiconductor devices including peripherally located bond pads, assemblies, packages, and methods |
| SG107595A1 (en) | 2002-06-18 | 2004-12-29 | Micron Technology Inc | Semiconductor devices and semiconductor device components with peripherally located, castellated contacts, assembles and packages including such semiconductor devices or packages and associated methods |
| SG120123A1 (en) | 2003-09-30 | 2006-03-28 | Micron Technology Inc | Castellated chip-scale packages and methods for fabricating the same |
| CN100511672C (en) * | 2004-03-25 | 2009-07-08 | 日本电气株式会社 | Chip stacking semiconductor device |
-
1991
- 1991-09-13 JP JP3234307A patent/JP2988045B2/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6667551B2 (en) | 2000-01-21 | 2003-12-23 | Seiko Epson Corporation | Semiconductor device and manufacturing thereof, including a through-hole with a wider intermediate cavity |
| US6852621B2 (en) | 2000-01-21 | 2005-02-08 | Seiko Epson Corporation | Semiconductor device and manufacturing method therefor, circuit board, and electronic equipment |
| US7233413B2 (en) | 2002-11-22 | 2007-06-19 | E. I. Du Pont De Nemours And Company | Gamut description and visualization |
| US7214615B2 (en) | 2003-03-17 | 2007-05-08 | Seiko Epson Corporation | Method of manufacturing semiconductor device, semiconductor device, circuit substrate and electronic apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0575014A (en) | 1993-03-26 |
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