JP2917649B2 - Method for manufacturing semiconductor device - Google Patents
Method for manufacturing semiconductor deviceInfo
- Publication number
- JP2917649B2 JP2917649B2 JP4045091A JP4509192A JP2917649B2 JP 2917649 B2 JP2917649 B2 JP 2917649B2 JP 4045091 A JP4045091 A JP 4045091A JP 4509192 A JP4509192 A JP 4509192A JP 2917649 B2 JP2917649 B2 JP 2917649B2
- Authority
- JP
- Japan
- Prior art keywords
- represented
- integer
- film
- fluorine atom
- metal alkoxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims description 14
- 239000004065 semiconductor Substances 0.000 title claims description 11
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 150000004703 alkoxides Chemical class 0.000 claims description 15
- 229910052731 fluorine Inorganic materials 0.000 claims description 15
- 125000001153 fluoro group Chemical group F* 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 7
- -1 fluoroalkoxy tantalum Chemical compound 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 125000000217 alkyl group Chemical group 0.000 claims description 3
- 230000005587 bubbling Effects 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims 1
- 239000010408 film Substances 0.000 description 32
- 239000003990 capacitor Substances 0.000 description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 11
- 229920005591 polysilicon Polymers 0.000 description 11
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 9
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 9
- 239000007789 gas Substances 0.000 description 7
- 239000010410 layer Substances 0.000 description 6
- 238000007796 conventional method Methods 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 5
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 4
- 239000010936 titanium Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 2
- 239000001272 nitrous oxide Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000008016 vaporization Effects 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- OEIMLTQPLAGXMX-UHFFFAOYSA-I tantalum(v) chloride Chemical compound Cl[Ta](Cl)(Cl)(Cl)Cl OEIMLTQPLAGXMX-UHFFFAOYSA-I 0.000 description 1
- HSXKFDGTKKAEHL-UHFFFAOYSA-N tantalum(v) ethoxide Chemical compound [Ta+5].CC[O-].CC[O-].CC[O-].CC[O-].CC[O-] HSXKFDGTKKAEHL-UHFFFAOYSA-N 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
- Semiconductor Integrated Circuits (AREA)
- Formation Of Insulating Films (AREA)
- Semiconductor Memories (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は半導体装置の製造方法に
関し、特に高誘電率容量膜の製造方法に関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a method for manufacturing a high dielectric constant capacitance film.
【０００２】[0002]
【従来の技術】半導体集積回路の高集積化にともない、
素子パターンの微細化が進んでいる。特にＤＲＡＭにお
いて、高密度化のためＦＥＴ部および容量（キャパシ
タ）部の縮小が必要になっている。さらに、容量部の占
有面積を縮小するため３次元のスタック型容量素子が実
用化されている。2. Description of the Related Art As semiconductor integrated circuits become more highly integrated,
The miniaturization of element patterns is progressing. In particular, in a DRAM, it is necessary to reduce the size of the FET section and the capacity (capacitor) section for higher density. Further, a three-dimensional stacked capacitive element has been put to practical use in order to reduce the area occupied by the capacitive part.
【０００３】容量部のパターンを微細化すると容量値が
低下して、ソフトエラーなどの信頼性上の問題が発生す
るので、高誘電率の容量絶縁膜の適用が検討されてい
る。[0003] When the pattern of the capacitor portion is miniaturized, the capacitance value decreases, and a reliability problem such as a soft error occurs. Therefore, application of a capacitor insulating film having a high dielectric constant has been studied.
【０００４】ＩＥＤＭ（ＩＥＥＥ Ｉｎｔｅｒｎａｔｉ
ｏｎａｌ Ｅｌｅｃｔｒｏｎ Ｄｅｖｉｃｅｓ Ｍｅｅ
ｔｉｎｇ），Ｔｅｃｈｎｉｃａｌ Ｄｉｇｅｓｔ，１９
８９，ｐｐ．４３〜４６において、容量絶縁膜として五
酸化タンタル（Ｔａ2 Ｏ5 ）を用いている。その製造方
法は、ポリシリコンからなる下部電極を形成したのち、
四弗化炭素（ＣＦ4 ）ガスプラズマ中でクリーニングし
たのち、五塩化タンタル（ＴａＣｌ5 ）および亜酸化窒
素（Ｎ2 Ｏ）をソースガスとして、基板温度４５０℃で
プラズマＣＶＤ法により五酸化二タンタル（Ｔａ
2 Ｏ5 ）膜を形成する。そのあと窒化チタン膜およびタ
ングステン膜からなる積層構造の上部電極を形成して、
スタック型の容量部を形成する。[0004] IEEEDM (IEEE International)
online Electron Devices Mee
ting), Technical Digest, 19
89, pp. 43 to 46, tantalum pentoxide (Ta 2 O 5 ) is used as a capacitance insulating film. The manufacturing method is to form a lower electrode made of polysilicon,
After cleaning in a carbon tetrafluoride (CF 4 ) gas plasma, tantalum pentachloride (TaCl 5 ) and nitrous oxide (N 2 O) are used as source gases at a substrate temperature of 450 ° C. by plasma CVD to form tantalum pentoxide. (Ta
2 O 5 ) A film is formed. After that, an upper electrode having a laminated structure composed of a titanium nitride film and a tungsten film is formed,
A stack-type capacitance section is formed.
【０００５】[0005]
【発明が解決しようとする課題】従来の五酸化二タンタ
ル（Ｔａ2 Ｏ5 ）膜の形成方法には、つぎのような問題
がある。The conventional method of forming a tantalum pentoxide (Ta 2 O 5 ) film has the following problems.
【０００６】亜酸化窒素（Ｎ2 Ｏ）が酸化性で、成長
温度が４５０℃と高いので、下部電極であるポリシリコ
ンの表面が酸化される。[0006] Since nitrous oxide (N 2 O) is oxidizing and has a high growth temperature of 450 ° C., the surface of polysilicon as a lower electrode is oxidized.
【０００７】五酸化二タンタル膜と酸化シリコン膜と
の２層構造になって容量値が低下する。The capacitance is reduced due to the two-layer structure of the tantalum pentoxide film and the silicon oxide film.
【０００８】そのため容量部のパターンを微細化する
と、容量絶縁膜を薄くしても十分な容量値が得られない
ので、ソフトエラー耐性が低下するという問題がある。[0008] Therefore, when the pattern of the capacitor portion is miniaturized, a sufficient capacitance value cannot be obtained even if the capacitor insulating film is thinned, so that there is a problem that the soft error resistance is reduced.
【０００９】[0009]
【課題を解決するための手段】本発明の半導体装置の製
造方法は、減圧法、加圧法、バブリング法のうち１つ以
上を用いて気化させた、弗素原子を含有する金属アルコ
キシドの気化ガスおよび弗素原子を含有しない金属アル
コキシドの気化ガスのうち少なくとも弗素原子を含む気
化ガスを、加圧下、減圧下、常圧下のうちいずれかの圧
力で、２００℃以下の温度で水蒸気と反応させて半導体
基板上に高誘電率膜を形成したのち、熱処理を行なうも
のである。According to the present invention, there is provided a method of manufacturing a semiconductor device, comprising: a vaporization gas of a metal alkoxide containing a fluorine atom, which is vaporized by using at least one of a decompression method, a pressure method and a bubbling method. A semiconductor substrate is formed by reacting a vaporized gas containing at least a fluorine atom among vaporized gases of a metal alkoxide not containing a fluorine atom with water vapor at a temperature of 200 ° C. or less at any one of pressurized, reduced, and normal pressures. After a high dielectric constant film is formed thereon, heat treatment is performed.
【００１０】[0010]
【実施例】本発明の第１の実施例に用いる高誘電率容量
膜を形成するための装置について、図２を参照して説明
する。DESCRIPTION OF THE PREFERRED EMBODIMENTS An apparatus for forming a high dielectric constant capacitance film used in a first embodiment of the present invention will be described with reference to FIG.
【００１１】弗素原子を含有する金属アルコキシド、弗
素原子を含有しない金属アルコキシド、純水が各バブラ
ー１８ａ，１８ｂ，１８ｃで気化され、各流量コントロ
ーラ１７ａ，１７ｂ，１７ｃで制御された窒素（Ｎ2 ）
ガスによって反応室に導入される。これらのガスは反応
室で混合され、加熱用ヒーター１５ａを有するサセプタ
ー１４上に設置された半導体基板１６表面に高誘電率容
量膜が堆積する。A metal alkoxide containing a fluorine atom, a metal alkoxide not containing a fluorine atom, and pure water are vaporized by each of the bubblers 18a, 18b and 18c, and nitrogen (N 2 ) controlled by each of the flow controllers 17a, 17b and 17c.
The gas is introduced into the reaction chamber. These gases are mixed in the reaction chamber, and a high dielectric constant capacity film is deposited on the surface of the semiconductor substrate 16 provided on the susceptor 14 having the heater 15a for heating.
【００１２】ここで弗素原子を有する金属アルコキシド
としてＦＴａ（ＯＣ2 Ｈ5 ）4 で表わされるフルオロテ
トラエトキシタンタルを用い、弗素原子を含有しない金
属アルコキシドを用いないで五酸化二タンタル膜を形成
する。バブラー１８ａおよび１８ｂを６０℃に、流量コ
ントローラ１７ａおよび１７ｂを１ｌ（リットル）／分
に、反応室１３のの圧力を７００ｍＴｏｒｒに、サセプ
ター１４の温度を３０℃に設定した。Here, a fluorotetraethoxytantalum represented by FTa (OC 2 H 5 ) 4 is used as a metal alkoxide having a fluorine atom, and a ditantalum pentoxide film is formed without using a metal alkoxide containing no fluorine atom. The bubblers 18a and 18b were set at 60 ° C., the flow controllers 17a and 17b were set at 1 liter / minute, the pressure in the reaction chamber 13 was set at 700 mTorr, and the temperature of the susceptor 14 was set at 30 ° C.
【００１３】つぎに本発明の第１の実施例としてスタッ
ク型容量部の製造方法について、図１（ａ）〜（ｅ）を
参照して説明する。Next, as a first embodiment of the present invention, a method of manufacturing a stacked capacitor will be described with reference to FIGS. 1 (a) to 1 (e).
【００１４】はじめに図１（ａ）に示すように、シリコ
ン基板１表面にフィールド酸化膜（図示せず）、ゲート
酸化膜２、ポリシリコンゲート電極３を順次形成したの
ち、拡散層４ａ，４ｂ，４ｃを形成する。つぎに層間絶
縁膜５を堆積して、拡散層４ａ，４ｂ，４ｃ上の層間絶
縁膜５をエッチングしたのち、拡散層４ａ，４ｂ，４ｃ
に接続するポリシリコンからなる下部電極６を形成す
る。First, as shown in FIG. 1A, a field oxide film (not shown), a gate oxide film 2, and a polysilicon gate electrode 3 are sequentially formed on the surface of a silicon substrate 1, and then diffusion layers 4a, 4b, 4c is formed. Next, an interlayer insulating film 5 is deposited, and after etching the interlayer insulating film 5 on the diffusion layers 4a, 4b, 4c, the diffusion layers 4a, 4b, 4c are formed.
The lower electrode 6 made of polysilicon to be connected to is formed.
【００１５】つぎに図１（ｂ）に示すように、厚さ２０
ｎｍの五酸化二タンタル膜７を堆積したのち、８００℃
の窒素雰囲気で１０分間アニールする。ここで五酸化二
タンタル膜７の形成は図２の装置を用いて行なう。Next, as shown in FIG.
After depositing a tantalum pentoxide film 7 nm
In a nitrogen atmosphere for 10 minutes. Here, the tantalum pentoxide film 7 is formed using the apparatus shown in FIG.
【００１６】つぎに図１（ｃ）に示すように、ポリシリ
コンからなる上部電極８を形成する。Next, as shown in FIG. 1C, an upper electrode 8 made of polysilicon is formed.
【００１７】つぎに図１（ｄ）に示すように、再び層間
絶縁膜９を堆積したのち拡散層４ｂに接続するコンタク
ト１０を開口する。Next, as shown in FIG. 1D, after the interlayer insulating film 9 is deposited again, a contact 10 connected to the diffusion layer 4b is opened.
【００１８】つぎに図１（ｅ）に示すように、コンタク
ト１０にポリシリコン１１を埋設したのち燐などを拡散
する。つぎにアルミニウム−シリコン−銅配線１２を形
成してスタック型容量部が完成する。Next, as shown in FIG. 1E, after the polysilicon 11 is buried in the contact 10, phosphorus or the like is diffused. Next, an aluminum-silicon-copper wiring 12 is formed to complete a stacked capacitor.
【００１９】本実施例の容量部の容量値は４０ｆＦであ
り、従来の方法で得られた容量値（３０ｆＦ）よりも大
きな値が得られた。The capacitance value of the capacitance section of this embodiment is 40 fF, which is larger than the capacitance value (30 fF) obtained by the conventional method.
【００２０】透過電子顕微鏡を用いてスタック容量部の
断面を観察した結果、五酸化二タンタル膜のリーク電流
特性は、従来の方法で形成したものと同等であり、実用
上の問題はなかった。As a result of observing the cross section of the stack capacitor using a transmission electron microscope, the leakage current characteristics of the tantalum pentoxide film were the same as those formed by the conventional method, and there was no practical problem.
【００２１】つぎに本発明の第２の実施例について述べ
る。弗素原子を含有する金属アルコキシドとして、ＦＴ
ａ（ＯＣ2 Ｈ5 ）4 で表わされるフルオロテトラエトキ
シタンタルを用い、弗素原子を含有しない金属アルコキ
シドとしてＴａ（ＯＣ2 Ｈ5）5 で表わされるペンタエ
トキシタンタルを用いた。図１のバブラー１８ａ，１８
ｂ，１８ｃの温度を６０℃に、流量コントローラ１７
ａ，１７ｂ，１７ｃの流量を各０．５ｌ（リットル）／
分、１ｌ／分、０．５ｌ／分に、反応室１３の圧力を７
６０ｍＴｏｒｒに、サセプター１４の温度を５０℃に設
定して、厚さ２０ｎｍの五酸化二タンタル膜を堆積し
た。Next, a second embodiment of the present invention will be described. As a metal alkoxide containing a fluorine atom, FT
Fluorotetraethoxy tantalum represented by a (OC 2 H 5 ) 4 was used, and pentaethoxy tantalum represented by Ta (OC 2 H 5 ) 5 was used as a metal alkoxide containing no fluorine atom. The bubblers 18a and 18 in FIG.
b, 18c to 60 ° C.
The flow rates of a, 17b, and 17c are each 0.5 l (liter) /
Min, 1 l / min and 0.5 l / min, and the pressure in the reaction chamber 13 is reduced to 7
At a temperature of 60 mTorr, the temperature of the susceptor 14 was set to 50 ° C., and a tantalum pentoxide film having a thickness of 20 nm was deposited.
【００２２】図１（ｂ）の工程で五酸化二タンタル７を
堆積して、ＤＲＡＭを形成した。スタック型容量部の容
量値は４２ｆＦと、従来の方法による３０ｆＦよりも大
きい値が得られた。リーク電流特性は第１の実施例と同
様に従来の方法で形成したものと同等であった。In the step of FIG. 1B, ditantalum pentoxide 7 was deposited to form a DRAM. The capacitance value of the stack capacitance portion was 42 fF, which was larger than 30 fF by the conventional method. The leakage current characteristics were the same as those formed by the conventional method as in the first embodiment.
【００２３】以上、五酸化二タンタルを用いたが、その
代りに二酸化チタン、二酸化ジルコニウム、二酸化ハフ
ニウムのいずれかを用いることができる。As described above, ditantalum pentoxide is used, but any of titanium dioxide, zirconium dioxide and hafnium dioxide can be used instead.
【００２４】ここで、弗素原子を含有する金属アルコキ
シドは、ｎを１〜４の整数、Ｒをアルキル基として、Ｆ
n Ｔａ（ＯＲ）5-n で表わされるフルオロアルコキシタ
ンタル、ｎを１〜３の整数、Ｆn Ｔｉ（ＯＲ）4-n で表
わされるフルオロアルコキシチタン、ｎを１〜３の整
数、Ｆn Ｚｒ（ＯＲ）4-n で表わされるフルオロアルコ
キシジルコニウム、ｎを１〜３の整数、Ｆn Ｈｆ（Ｏ
Ｒ）4-n で表わされるフルオロアルコキシハフニウムの
うち少なくとも１つを用いる。Here, the metal alkoxide containing a fluorine atom is such that n is an integer of 1 to 4, R is an alkyl group, and
n Ta (OR) fluoroalkoxy tantalum represented by 5-n, n the integer of 1 to 3, F n Ti (OR) fluoroalkoxy titanium represented by 4-n, n the integer of 1 to 3, F n Zr (OR) fluoroalkoxy zirconium represented by 4-n, n the integer of 1 to 3, F n Hf (O
R) At least one of fluoroalkoxyhafnium represented by 4-n is used.
【００２５】また、弗素原子を含有しない金属アルコキ
シドは、Ｒをアルキル基として、Ｔａ（ＯＲ）5 で表わ
されるペンタアルコキシタンタル、Ｔｉ（ＯＲ）4 で表
わされるテトラアルコキシチタン、Ｚｒ（ＯＲ）4 で表
わされるテトラアルコキシジルコニウム、Ｈｆ（ＯＲ）
4 で表わされるテトラアルコキシハフニウムのうち少な
くとも１つを用いる。Metal alkoxides containing no fluorine atom include pentaalkoxytantalum represented by Ta (OR) 5 , tetraalkoxytitanium represented by Ti (OR) 4 , and Zr (OR) 4, where R is an alkyl group. Tetraalkoxy zirconium represented, Hf (OR)
At least one of tetraalkoxyhafnium represented by 4 is used.
【００２６】さらに金属アルコキシドの気化法として
は、減圧法、加熱法、バブリング法、あるいは、これら
を組み合わせた方法を用いることができる。また高誘電
率容量絶縁膜の堆積温度は２００℃以下とし、反応室
は、加圧、減圧、常圧のうちいずれかを選ぶことができ
る。Further, as a method for vaporizing the metal alkoxide, a reduced pressure method, a heating method, a bubbling method, or a combination thereof can be used. The deposition temperature of the high-dielectric-constant insulating film is set to 200 ° C. or lower, and the reaction chamber can be selected from among pressurized, depressurized and normal pressure.
【００２７】なお、本発明はＤＲＡＭの容量絶縁膜のほ
か、広く半導体装置用の高誘電率薄膜として用いること
ができる。The present invention can be widely used as a high dielectric constant thin film for a semiconductor device in addition to a capacitance insulating film of a DRAM.
【００２８】[0028]
【発明の効果】ポリシリコンの上にプラズマ反応などを
用いることなく、２００℃以下で五酸化タンタル膜など
の高誘電率膜を堆積することができる。ポリシリコン表
面が酸化しないので容量素子の容量値の低下を避けるこ
とができる。According to the present invention, a high dielectric constant film such as a tantalum pentoxide film can be deposited on polysilicon at 200 ° C. or lower without using a plasma reaction or the like. Since the polysilicon surface is not oxidized, a decrease in the capacitance value of the capacitor can be avoided.
【００２９】パターンが微細化された容量素子を薄い容
量絶縁膜を用いて形成しても、十分な容量を得ることが
できる。ソフトエラー耐性を劣化させることなく、高歩
留り、高信頼性の半導体集積回路を形成することができ
る。Even if a capacitor having a fine pattern is formed using a thin capacitor insulating film, a sufficient capacitance can be obtained. A semiconductor integrated circuit with high yield and high reliability can be formed without deteriorating soft error resistance.
【図１】本発明の一実施例を工程順に示す断面図であ
る。FIG. 1 is a sectional view showing an embodiment of the present invention in the order of steps.
【図２】本発明の一実施例で用いる高誘電率容量膜を形
成するための装置を示す模式図である。FIG. 2 is a schematic view showing an apparatus for forming a high dielectric constant capacitance film used in one embodiment of the present invention.
１ シリコン基板 ２ ゲート酸化膜 ３ ゲート電極 ４ａ，４ｂ，４ｃ 拡散層 ５ 層間絶縁膜 ６ 下部電極（ポリシリコン） ７ 五酸化二タンタル ８ 上部電極（ポリシリコン） ９ 層間絶縁膜 １０ コンタクト １１ ポリシリコン １２ アルミニウム−シリコン−銅−配線 １３ 反応室 １４ サセプター １５ａ，１５ｂ，１５ｃ，１５ｄ 加熱用ヒーター １６ 半導体基板 １７ａ，１７ｂ，１７ｃ 流量コントローラ １８ａ バブラー（弗素原子を含有する金属アルコキ
シド） １８ｂ バブラー（弗素原子を含有しない金属アルコ
キシド） １８ｃ バブラー（純水）Reference Signs List 1 silicon substrate 2 gate oxide film 3 gate electrode 4a, 4b, 4c diffusion layer 5 interlayer insulating film 6 lower electrode (polysilicon) 7 ditantalum pentoxide 8 upper electrode (polysilicon) 9 interlayer insulating film 10 contact 11 polysilicon 12 Aluminum-silicon-copper-wiring 13 Reaction chamber 14 Susceptor 15a, 15b, 15c, 15d Heating heater 16 Semiconductor substrate 17a, 17b, 17c Flow controller 18a Bubbler (metal alkoxide containing fluorine atom) 18b Bubbler (containing fluorine atom) No metal alkoxide) 18c bubbler (pure water)
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 ＦＩ Ｈ０１Ｌ 27/108 ──────────────────────────────────────────────────の Continued on front page (51) Int.Cl. 6 Identification code FI H01L 27/108
Claims (2)
つ以上を用いて気化させた、弗素原子を含有する金属ア
ルコキシドの気化ガスを含む気化ガスを、加圧下、減圧
下、常圧下のうちいずれかの圧力で、２００℃以下の温
度で水蒸気と反応させて半導体基板上に高誘電率膜を形
成したのち、熱処理を行なう半導体装置の製造方法。1. One of a pressure reduction method, a pressure method, and a bubbling method.
A vaporized gas containing a vaporized gas of a metal alkoxide containing a fluorine atom, which has been vaporized using at least one of the above, is reacted with water vapor at a temperature of 200 ° C. or less at any one of pressure, reduced pressure, and normal pressure. Forming a high dielectric constant film on a semiconductor substrate, followed by heat treatment.
ドは、ｎを１〜４の整数、Ｒをアルキル基として、Ｆn
Ｔａ（ＯＲ）5-n で表わされるフルオロアルコキシタン
タル、ｎを１〜３の整数として、Ｆn Ｔｉ（ＯＲ）4-n
で表わされるフルオロアルコキシチタン、ｎを１〜３の
整数として、Ｆn Ｚｒ（ＯＲ）4-nで表わされるフルオ
ロアルコキシジルコニウム、ｎを１〜３の整数として、
ＦnＨｆ（ＯＲ）4-n で表わされるフルオロアルコキシ
ハフニウムのうち少なくとも１つである請求項１記載の
半導体装置の製造方法。2. The metal alkoxide containing a fluorine atom, wherein n is an integer of 1 to 4, R is an alkyl group,
A fluoroalkoxy tantalum represented by Ta (OR) 5-n, where n is an integer of 1 to 3, and FnTi (OR) 4-n
A fluoroalkoxytitanium represented by the formula, n is an integer of 1 to 3, and a fluoroalkoxyzirconium represented by FnZr (OR) 4-n, n is an integer of 1 to 3,
2. The method for manufacturing a semiconductor device according to claim 1, wherein the compound is at least one of fluoroalkoxyhafnium represented by FnHf (OR) 4-n.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4045091A JP2917649B2 (en) | 1992-03-03 | 1992-03-03 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4045091A JP2917649B2 (en) | 1992-03-03 | 1992-03-03 | Method for manufacturing semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05247653A JPH05247653A (en) | 1993-09-24 |
| JP2917649B2 true JP2917649B2 (en) | 1999-07-12 |
Family
ID=12709647
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4045091A Expired - Fee Related JP2917649B2 (en) | 1992-03-03 | 1992-03-03 | Method for manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2917649B2 (en) |
-
1992
- 1992-03-03 JP JP4045091A patent/JP2917649B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH05247653A (en) | 1993-09-24 |
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