JP2902953B2 - Manufacturing equipment for thin-film photoelectric conversion elements - Google Patents
Manufacturing equipment for thin-film photoelectric conversion elementsInfo
- Publication number
- JP2902953B2 JP2902953B2 JP6250279A JP25027994A JP2902953B2 JP 2902953 B2 JP2902953 B2 JP 2902953B2 JP 6250279 A JP6250279 A JP 6250279A JP 25027994 A JP25027994 A JP 25027994A JP 2902953 B2 JP2902953 B2 JP 2902953B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- chamber
- photoelectric conversion
- metal film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Description
【0001】[0001]
【産業上の利用分野】本発明は、送り室から巻き取り室
へ向けて搬送される可撓性基板上に各層を成膜する薄膜
光電変換素子の製造装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for manufacturing a thin-film photoelectric conversion element for forming layers on a flexible substrate conveyed from a feed chamber to a take-up chamber.
【0002】[0002]
【従来の技術】a−Siを主材料とした光電変換層を含
む各層を長尺の高分子材料あるいはステンレス鋼などの
金属からなる可撓性基板 (以下単に基板と記す) 上に形
成して薄膜光電変換素子を製造する方法は、生産性の点
ですぐれている。長尺の基板上に複数の層を成膜する方
式として、各成膜室内を移動する基板上に成膜するロー
ルツーロール方式と、成膜室内で停止させた基板上に成
膜したのち成膜の終わった基板部分を成膜室外へ送り出
すステッピングロール方式とがある。従来のこの種の成
膜装置は、基板面を水平にして搬送するものであった
が、本出願人の出願にかかる特願平6−120942号
明細書に記載された薄膜光電変換素子製造装置は、基板
面を鉛直にして搬送することにより装置の設置スペース
を節減したもので、その際問題となる基板の下方へのず
れ、たわみを基板の搬送方向を局部的に変えることによ
り搬送ロールの円柱面に基板をある距離だけ密着して通
過するようにして防止している。図3、図4は前記明細
書に添付された図とほぼ同一で、図3に平面断面図、図
4に正面断面図で示すこの装置では、それぞれ架台25
上に設置した送り室21および巻き取り室24の中にコ
ア31および32が軸を鉛直にして保持されており、そ
のため下部に真空シールを備えた軸受53があって、基
準テーパコーン51を軸を鉛直にして保持している。そ
して、基準テーパコーン51の軸には室外に配置したコ
ア駆動モータ54が直結されている。基準テーパコーン
51の直上には従動テーパコーン52が対向している。
従動テーパコーン52は、その上のコアセット機構55
により上下に移動させることができる。基板1をコア3
1からコア32まで搬送するために、送り室21には送
りロール34が、巻き取り室24には巻き取りロール3
5が配置され、それぞれ室外の駆動モータ57が直結さ
れている。その回転軸は真空シールされた軸受56によ
り支持され、送りロール34、巻き取りロール35の両
側に基板の向きを変える中心軸の周りに回動自在のアイ
ドルロール33を備え、送りロール34および巻き取り
ロール35および各アイドルロール33の上部は、上部
支持軸受58で支持し、アイドルロール33の下端は、
それぞれ下部支持軸受59で保持している。送り室2
1、巻き取り室22にはそれぞれ前面に矢印63の方向
に開く扉61、62を備え、この扉61、62を用いて
コア31、32の出し入れ、基板1のセットを行う。成
膜室22、23における基板1への成膜は、接地電極4
2を駆動源49により下降させ、基板1を高電圧電極4
1を囲む壁体44上部のトッププレート45へ押し付
け、接地電極42に内蔵され、交流電源46に接続され
たヒータで基板1を加熱し、基板1と高電圧電極41の
間に生ずる放電室間7にガス71、72を導入し、RF
電源47により高電圧電極41に電圧を印加して成膜空
間7にプラズマを発生させて行う。膜はトッププレート
の開口部48に面した基板1上に形成される。高電圧電
極41は扉73に取り付けられており、扉73を開いて
電極のメンテナンス作業を行うことができる。接地電極
42も同様に扉に取り付けて、メンテナンス作業を容易
にすることができる。2. Description of the Related Art Each layer including a photoelectric conversion layer mainly composed of a-Si is formed on a flexible substrate (hereinafter simply referred to as a substrate) made of a long polymer material or a metal such as stainless steel. The method of manufacturing a thin film photoelectric conversion element is excellent in productivity. As a method of forming a plurality of layers on a long substrate, there are a roll-to-roll method in which a film is formed on a substrate moving in each film forming chamber and a method in which a film is formed on a substrate stopped in the film forming chamber. There is a stepping roll method in which a substrate portion on which a film is finished is sent out of a film forming chamber. A conventional film forming apparatus of this type transports a substrate with the substrate surface being horizontal. However, the thin film photoelectric conversion element manufacturing apparatus described in Japanese Patent Application No. Hei 6-120942 filed by the present applicant is disclosed. Is to reduce the installation space of the equipment by transporting the substrate vertically, and to reduce the displacement and deflection of the substrate, which is a problem, by changing the transport direction of the substrate locally. It is prevented by passing the substrate in close contact with the cylindrical surface for a certain distance. FIGS. 3 and 4 are almost the same as the drawings attached to the above specification, and in this apparatus shown in a plan sectional view in FIG. 3 and a front sectional view in FIG.
The cores 31 and 32 are held vertically in the feed chamber 21 and the take-up chamber 24 installed above. Therefore, a bearing 53 provided with a vacuum seal is provided at a lower portion. It is held vertically. The shaft of the reference taper cone 51 is directly connected to a core drive motor 54 disposed outside the room. A driven taper cone 52 faces directly above the reference taper cone 51.
The driven taper cone 52 has a core setting mechanism 55 thereon.
Can be moved up and down. Substrate 1 with core 3
In order to carry the material from 1 to the core 32, a feed roll 34 is provided in the feed chamber 21, and a take-up roll 3
5 are arranged, and an outdoor drive motor 57 is directly connected to each. The rotating shaft is supported by a vacuum-sealed bearing 56, and includes a feed roll 34 and a take-up roll 35, on both sides of which there are provided idle rolls 33 rotatable about a central axis for changing the direction of the substrate. The upper part of the take-up roll 35 and each idle roll 33 is supported by an upper support bearing 58, and the lower end of the idle roll 33 is
Each is held by a lower support bearing 59. Feeding room 2
1. The take-up chamber 22 is provided with doors 61 and 62 which open in the direction of an arrow 63 on the front surface, respectively. The doors 61 and 62 are used to take in and out the cores 31 and 32 and set the substrate 1. The film is formed on the substrate 1 in the film forming chambers 22 and 23 by the ground electrode 4
2 is lowered by the drive source 49, and the substrate 1 is
The substrate 1 is pressed against a top plate 45 above a wall 44 surrounding the substrate 1, and is heated by a heater built in the ground electrode 42 and connected to an AC power supply 46. 7, gas 71 and 72 are introduced and RF
This is performed by applying a voltage to the high-voltage electrode 41 from the power supply 47 to generate plasma in the film formation space 7. The film is formed on the substrate 1 facing the opening 48 of the top plate. The high voltage electrode 41 is attached to the door 73, and the maintenance work of the electrode can be performed by opening the door 73. The ground electrode 42 can be similarly attached to the door to facilitate maintenance work.
【0003】基板1の搬送は、送りロール34、巻き取
りロール35および基準テーパコーン51の各々の駆動
モータ57、54を外部に設けた制御装置でサーボ制御
することで、基板面が鉛直面内にあるようにして行う。The substrate 1 is conveyed by servo-controlling the drive motors 57, 54 of the feed roll 34, the take-up roll 35, and the reference taper cone 51 by an externally provided control device so that the substrate surface is in a vertical plane. Do as you would.
【0004】[0004]
【発明が解決しようとする課題】しかし、図3、図4に
示した薄膜光電変換素子製造装置においては、基板加熱
あるいは成膜中のプラズマから受ける熱により基板1に
しわが生じ、これが結果的にコア32における巻きしわ
を発生し、薄膜光電変換素子の損傷をひきおこし、製造
される薄膜光電変換素子の特性に低下をまねく可能性が
ある。また、この装置の量産に適する特長を生かすため
に長尺の基板を仕込もうとした場合、送りコア31およ
び巻き取りコア32の重量が必然的に重くなり、また作
業者がコアを軸を鉛直にして運ぶことは水平にして運ぶ
より困難であることから、基板1の着脱作業に時間が長
くかかる問題がある。さらに、薄膜光電変換素子の生産
量を増やすためには、送りロールから巻き取りロールに
至るラインを並列にすることが望ましい。図5に示すの
は、特願平5−220870号明細書などに記載されて
いる薄膜光電変換素子で、基板1の表面上に金属膜1
1、アモルファスシリコン (a−Si) 膜12、透明導
電膜13が積層され、裏面上に金属膜14が成膜されて
いる。そして、第一電極となる金属膜11は、基板1を
貫通する穴16の中でその内面金属膜13形成時に付着
する金属膜15により裏面電極となる金属膜14と接続
され、第二電極となる透明導電膜13は、a−Si膜1
2、金属膜11および基板1を貫通する穴17の中でそ
の内面に付着する金属膜15により金属膜14の他の部
分と接続される。従ってこの薄膜変換素子では、単一セ
ルの接続のための第一電極11と第二電極12との接続
を裏面での金属膜14の部分間で行うことができる。こ
のような薄膜光電変換素子の製造のためには、透明導電
膜13と金属膜14の成膜を、基板の両面に対して行わ
ねばならない。このような成膜ラインを一つの装置内で
並列にすることは、メンテナンス作業の点から困難であ
るという問題がある。However, in the thin film photoelectric conversion device manufacturing apparatus shown in FIGS. 3 and 4, wrinkles are generated on the substrate 1 due to heating of the substrate or heat received from plasma during film formation. Wrinkling in the core 32 may occur, causing damage to the thin-film photoelectric conversion element, which may cause deterioration in the characteristics of the manufactured thin-film photoelectric conversion element. In addition, when trying to load a long substrate in order to take advantage of the features suitable for mass production of this device, the weight of the feed core 31 and the take-up core 32 is inevitably heavy, and the operator has to move the core vertically. Since it is more difficult to carry the substrate 1 horizontally, it takes a long time to attach and detach the substrate 1. Further, in order to increase the production amount of the thin-film photoelectric conversion element, it is desirable to arrange the lines from the feed roll to the take-up roll in parallel. FIG. 5 shows a thin-film photoelectric conversion element described in Japanese Patent Application No. 5-220870 and the like.
1. An amorphous silicon (a-Si) film 12 and a transparent conductive film 13 are laminated, and a metal film 14 is formed on the back surface. The metal film 11 serving as the first electrode is connected to the metal film 14 serving as the back electrode by the metal film 15 attached when the inner metal film 13 is formed in the hole 16 penetrating the substrate 1. The transparent conductive film 13 is an a-Si film 1
2. In a hole 17 penetrating through the metal film 11 and the substrate 1, it is connected to another portion of the metal film 14 by a metal film 15 attached to the inner surface thereof. Therefore, in this thin-film conversion element, the connection between the first electrode 11 and the second electrode 12 for connecting a single cell can be performed between the portions of the metal film 14 on the back surface. In order to manufacture such a thin film photoelectric conversion element, the transparent conductive film 13 and the metal film 14 must be formed on both surfaces of the substrate. There is a problem that it is difficult to arrange such film forming lines in parallel in one apparatus from the viewpoint of maintenance work.
【0005】本発明の目的は、上述の問題を解決するこ
とにあり、第一の目的は基板が加熱されても基板面にし
わが発生することのない薄膜光電変換素子の製造装置を
提供することにあり、第二の目的は重量のあるコアの着
脱の容易な薄膜光電変換素子の製造装置を提供すること
にある。また、第三の目的は、基板の両面に成膜するラ
インを2列備えた薄膜光電変換素子の製造装置を提供す
ることにある。An object of the present invention is to solve the above-mentioned problems, and a first object of the present invention is to provide an apparatus for manufacturing a thin film photoelectric conversion element which does not cause wrinkles on a substrate surface even when the substrate is heated. A second object is to provide an apparatus for manufacturing a thin-film photoelectric conversion element in which a heavy core can be easily attached and detached. A third object is to provide an apparatus for manufacturing a thin-film photoelectric conversion element having two lines for forming films on both surfaces of a substrate.
【0006】[0006]
【課題を解決するための手段】上記の第一の目的を達成
するために、本発明によれば、送り室から巻き取り室へ
回転駆動される搬送ロールと押さえロールとの間を通し
て面が鉛直面内にあるようにして搬送される可撓性基板
の表面上に、一つあるいは複数の成膜室内で基板をはさ
んで対向する電極間に電圧を印加して成膜するものにお
いて、円柱面が成膜室を出た基板に接触する、冷媒の通
流によって冷却されたロールを備えたこととする。冷媒
が水であると良い。上記の第二の目的を達成するため
に、本発明によれば、送り室から巻き取り室へ回転駆動
される搬送ロールと押さえロールとの間を通して面が鉛
直面内にあるようにして搬送される可撓性基板の表面上
に、一つあるいは複数の成膜室内で基板をはさんで対向
する電極間に電圧を印加して成膜するものにおいて、送
り室および巻き取り室の外に、基板を巻回した芯体の保
持体の位置を芯体軸の水平位置と鉛直位置の間で変換で
きる回転手段と、前記保持体の位置を上下に変更できる
昇降手段と、前記保持体の位置を送り室あるいは巻き取
り室内の芯体装着位置との間で変換できる前後移動手段
とをそれぞれ備えたこととする。上記の第三の目的を達
成するために、本発明によれば、可撓性基板の表面上
に、表面側金属膜,アモルファスシリコン膜,透明導電
膜が積層され、基板の裏面上に、裏面側金属膜が成膜さ
れ、表面側金属膜は、基板を貫通する第一の穴の中で、
裏面側金属膜と接続され、透明導電膜は、アモルファス
シリコン膜,表面側金属膜,基板を貫通する第二の穴の
中で、裏面側金属膜の、表面側金属膜と接続される部分
とは他の部分で接続され、てなる薄膜光電変換素子の製
造装置であって、送り室から巻き取り室へ回動駆動され
る搬送ロールと押さえロールとの間を通して面が鉛直面
内にあるようにして搬送される可撓性基板上に、複数の
成膜室内で基板をはさんで対向する電極間に電圧を印加
して成膜するものにおいて、2枚の可撓性基板を別個に
搬送する二つの搬送経路を有し、その二つの搬送経路
は、共通の送り室を出て、並行に成膜室を通る並列区間
と、その区間に等しい角度をなして別れて互いに反対の
方向に走る単独区間とを有し、単独区間において基板の
表面上に透明導電膜を成膜する成膜室と基板の裏面上に
裏面側金属膜を成膜する成膜室を通ることとする。According to the present invention, in order to achieve the first object, according to the present invention, a surface is vertically extended between a transport roll and a press roll which are driven to rotate from a feed chamber to a take-up chamber. A film is formed by applying a voltage between electrodes facing each other with one or more film-forming chambers sandwiching the substrate on the surface of a flexible substrate conveyed in the plane; It is assumed that a roll is provided, the surface of which is in contact with the substrate that has exited the film formation chamber and is cooled by the flow of a coolant. Preferably, the refrigerant is water. In order to achieve the second object, according to the present invention, the paper is conveyed so that the surface is in a vertical plane between a conveyance roll and a holding roll that are rotationally driven from the feed chamber to the winding chamber. On a surface of a flexible substrate, a film is formed by applying a voltage between electrodes facing each other across one or more film-forming chambers in one or more film-forming chambers. Rotating means capable of changing the position of the holding body of the core around which the substrate is wound between the horizontal position and the vertical position of the core axis, elevating means capable of changing the position of the holding body up and down, and the position of the holding body In the feed chamber or the take-up chamber. According to the present invention, in order to achieve the third object, the surface of the flexible substrate
In addition, surface side metal film, amorphous silicon film, transparent conductive
The film is stacked, and a backside metal film is formed on the backside of the substrate.
The surface side metal film is in the first hole penetrating the substrate,
Connected to the back side metal film, the transparent conductive film is amorphous
Silicon film, surface side metal film, second hole penetrating the substrate
Inside, the part of the back side metal film that is connected to the front side metal film
Is connected to other parts and is made of a thin-film photoelectric conversion element
A forming apparatus, flexible on a substrate surface is carried out as in the vertical plane through between the transport roll and the pressing roll are driven to rotate the take-up chamber from the feed chamber, a plurality of formed A film is formed by applying a voltage between electrodes facing each other across a substrate in a film chamber, and has two transport paths for separately transporting two flexible substrates, and the two transport paths are A parallel section that exits the common feed chamber and passes in parallel through the deposition chamber, and a single section that separates at an equal angle to the section and runs in opposite directions to each other.
The film forming chamber and on the back surface of the substrate for forming a transparent conductive film on the front surface
It passes through a film forming chamber for forming a back side metal film .
【0007】[0007]
【作用】成膜室において、成膜温度にするために加熱さ
れ、あるいはプラズマが与えられる熱によって加熱され
た基板に、冷媒の通流によって冷却されたロールの円柱
面を接触させれば熱から生ずる基板のしわを取り除くこ
とができる。送り室および巻き取り室の外にそれぞれ回
転手段、昇降手段および前後移動手段を備えることによ
り、運搬しやすい軸の水平位置にある芯体を鉛直に立
て、高さを調整した後送り室に入れて装着する作業、ま
た成膜後巻き取り室で外して室外へ取り出し、運搬しや
すい軸の水平位置に倒す作業が容易になる。In a film forming chamber, a cylindrical surface of a roll cooled by the flow of a refrigerant is brought into contact with a substrate heated to a film forming temperature or heated by heat to which plasma is applied. The resulting wrinkles on the substrate can be removed. By providing rotating means, elevating means, and back-and-forth moving means outside the feed chamber and the take-up chamber, respectively, the core body at the horizontal position of the axis which is easy to carry is set up vertically, and the height is adjusted and then put into the feed chamber. This facilitates the work of mounting and mounting, and the work of removing the film in the take-up chamber after film formation, taking it out of the room, and dropping it to the horizontal position of the shaft for easy transport.
【0008】基板の搬送径路を並列区間とそれと等しい
角度をなす単独区間に分け、並列区間では二つの搬送径
路を並行に通して成膜し、単独区間ではメンテナンス位
置が逆になる互いに基板の反対側の面への成膜を行うこ
とにより、単独の搬送径路を別個に配置する場合に比し
て占有面積が小さくなる。また、並列区間と単独区間の
間でもメンテナンスの作業領域の相互干渉を避ける配置
が可能になる。The transport path of the substrate is divided into a parallel section and a single section having the same angle as the parallel section. In the parallel section, the film is formed by passing the two transport paths in parallel. By forming the film on the side surface, the occupied area is reduced as compared with a case where a single transport path is separately arranged. In addition, it is possible to provide an arrangement for avoiding mutual interference between the maintenance work areas even between the parallel section and the single section.
【0009】[0009]
【実施例】以下、図3、図4を含めて共通の部分に同一
の符号を付した図を引用して本発明の実施例について述
べる。図1、図2は、請求項1記載の本発明の一実施例
の薄膜光電変換素子製造装置を示し、図1は平面断面
図、図2は正面断面図である。基板1を送り室21の送
りコア31から成膜室22、23を経て巻き取り室24
の巻き取りコア32へ搬送する機構は図3、図4とほぼ
同じである。基板1をコア31からコア32まで張力を
一定に保って搬送するために、送り室21と巻き取り室
24の基準テーパコーン51を回動させるコア駆動モー
タ54の個々の周速を制御器により検知し、周速の比率
を制御している。成膜室側のアイドルロール38の上端
は、基板1のずれ量を検知するレベルセンサ81の信号
によって前後に動作するアクチュエータ82に保持さ
れ、下端は、下部支持軸受としての球面軸受60で支持
されている。本発明によりタッチロール36が送り室2
1と成膜室22との間で送りロール34と対向して、成
膜室22と成膜室23との間で2本が互いに対向して、
また成膜室23と成膜室24との間で巻き取りロール3
5と対向して配置されている。これらのタッチロール3
6の円柱面で接触する基板1は、タッチロール36が内
部に冷却水37を流すことによって冷却されているの
で、搬送時に冷却される。これにより、基板のヒータに
よる加熱あるいはプラズマから与えられる熱によって基
板のしわを取り除くことができる。この場合、タッチロ
ール36に対向する送りロール34、巻き取りロール3
5も冷却することは、それらのロールと基板との接触面
積が大きいので、しわ除去により有効である。この装置
を用いて、すでに第一電極の金属膜を成膜した基板1の
上に成膜室22でa−Si膜を形成し、成膜室23では
高電圧電極41をターゲット電極としスパッタにより透
明導電膜を積層した。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings in which the same reference numerals are given to common parts including FIGS. 1 and 2 show an apparatus for manufacturing a thin film photoelectric conversion element according to an embodiment of the present invention. FIG. 1 is a plan sectional view and FIG. 2 is a front sectional view. The substrate 1 is transferred from the feed core 31 of the feed chamber 21 to the winding chamber 24 via the film forming chambers 22 and 23.
The mechanism for transporting to the take-up core 32 is substantially the same as in FIGS. In order to transport the substrate 1 from the core 31 to the core 32 while maintaining a constant tension, the controller detects the peripheral speed of each of the core drive motors 54 for rotating the reference taper cones 51 of the feed chamber 21 and the winding chamber 24. Then, the ratio of the peripheral speed is controlled. The upper end of the idle roll 38 on the film forming chamber side is held by an actuator 82 that moves back and forth in response to a signal from a level sensor 81 that detects the amount of displacement of the substrate 1, and the lower end is supported by a spherical bearing 60 as a lower support bearing. ing. According to the present invention, the touch roll 36 is
1 and the feed roll 34 between the film forming chamber 22 and two rolls facing each other between the film forming chamber 22 and the film forming chamber 23.
The winding roll 3 is disposed between the film forming chamber 23 and the film forming chamber 24.
5 and are arranged opposite to each other. These touch rolls 3
The substrate 1 that is in contact with the cylindrical surface 6 is cooled by the touch roll 36 by flowing the cooling water 37 therein, so that the substrate 1 is cooled during transport. This makes it possible to remove wrinkles from the substrate by heating the substrate with a heater or applying heat from plasma. In this case, the feed roll 34 facing the touch roll 36 and the take-up roll 3
Cooling 5 is more effective for removing wrinkles because the contact area between the roll and the substrate is large. Using this apparatus, an a-Si film is formed in the film forming chamber 22 on the substrate 1 on which the metal film of the first electrode has already been formed, and the high voltage electrode 41 is used as a target electrode in the film forming chamber 23 by sputtering. A transparent conductive film was laminated.
【0010】図6、図7は、請求項3記載の本発明の一
実施例の薄膜光電変換装置を成膜室の部分を省略して示
し、図6は平面断面図、図7は正面断面図である。送り
室21のコア31は、送り室に隣接する上下、旋回移動
機構を備えたコア装着装置91により、基準テーパコー
ン51と従動テーパコーン52の間に装着される。巻き
取り室24のコア32は、巻き取り室に隣接するコア取
り出し装置92により取り出される。コア装着装置91
のハンドリング機構93は、1点鎖線で示すようにコア
31を水平姿勢で保持し、ロータリーアクチュエータ9
4により90°旋回して垂直に立てる。送り室21の扉
61の位置が高い場合は、上下移動アクチュエータ95
と移動ガイド96より移動テーブル97が上昇し、コア
31を装着高さまで移動させる。装着高さに達したコア
31を、対向する基準テーパコーン51と従動テーパコ
ーン52の軸線上まで移動させるため、前後移動アクチ
ュエータ98と移動ガイド86により移動テーブル87
を送り室21の方向に移動する。次に、基準テーパコー
ン51のテーパとコア31のテーパが嵌合するように、
移動テーブル97を下方に移動し、従動テーパコーン5
2をコアセット機構55によって下降させてコア31を
装着する。そのあと、コア31を保持していたハンドリ
ング機構93を解除し、移動テーブル87、97により
ハンドリング機構93を所定の位置に待機させる。巻き
取り室24からのコア32の取り出しは、コア取り出し
装置92により、コア装着装置91の逆工程で行う。FIGS. 6 and 7 show a thin-film photoelectric conversion device according to an embodiment of the present invention in which a film forming chamber is omitted, FIG. 6 is a plan sectional view, and FIG. FIG. The core 31 of the feed chamber 21 is mounted between the reference taper cone 51 and the driven taper cone 52 by a core mounting device 91 having a vertical and pivotal movement mechanism adjacent to the feed chamber. The core 32 of the take-up chamber 24 is taken out by a core take-out device 92 adjacent to the take-up chamber. Core mounting device 91
The holding mechanism 93 holds the core 31 in a horizontal posture as shown by a dashed line, and
4. Turn 90 ° and stand upright. When the position of the door 61 of the feed chamber 21 is high, the vertical movement actuator 95
The moving table 97 is raised by the moving guide 96 and moves the core 31 to the mounting height. In order to move the core 31 which has reached the mounting height to the axis of the reference taper cone 51 and the driven taper cone 52 facing each other, the moving table 87 is moved by the front-rear moving actuator 98 and the moving guide 86.
In the direction of the feed chamber 21. Next, so that the taper of the reference taper cone 51 and the taper of the core 31 fit together,
The moving table 97 is moved downward, and the driven taper cone 5 is moved.
2 is lowered by the core setting mechanism 55 and the core 31 is mounted. Thereafter, the handling mechanism 93 holding the core 31 is released, and the handling tables 93 and 97 allow the handling mechanism 93 to wait at a predetermined position. The core 32 is taken out of the winding chamber 24 by the core take-out device 92 in the reverse process of the core mounting device 91.
【0011】図8は、図5に示した薄膜光電変換素子の
製造のために用いられる請求項4に記載の本発明の一実
施例を示す平面断面図である。図5に示す多層構造の光
電変換素子の製造のためには、第一工程として基板1上
に、金属膜11を成膜する。第二工程は、基板1を成膜
した金属膜11と共に貫通するスルーホール16、17
を形成する。第三工程は、基板1に成膜した金属膜11
上にa−Si膜12を成膜し、続いて第四工程として、
a−Si膜12上に透明導電膜13を成膜する。最終工
程において前工程で成膜した基板1の裏面に金属膜14
を成膜する必要がある。図8に示す製造装置において
は、2列の搬送系を備えている。成膜室の構成は、既に
第二工程まで終了した基板1にa−Si膜12を成膜す
る成膜室22、透明導電膜13を成膜する成膜室23、
金属膜14を成膜する成膜室26が搬送系毎にあり、共
通の送り室21につづいて、両成膜室22は一つの真空
室内に形成され、成膜室23、24は成膜室22後に中
間室27をはさんでL字状に曲げて配置されている。こ
のように配置することにより、扉64を開けての成膜室
22のメンテナンス、扉65、66を開けての成膜室2
3、26のメンテナンスは、互いの作業領域が干渉され
ることなく行うことができる。これにより、狭い面積に
生産性の大きい薄膜光電変換素子製造装置を配置するこ
とができる。実施例では、二つの搬送系 L字状に曲げ
ているT字状配置だが、成膜室23、26の扉が開閉で
きる配置であればこの配置に限定されず、例えばY字状
にしてもよい。成膜室26の構造は成膜室23と同一で
あるが、高電圧電極41と接地電極42の位置が基板1
の面に対し対称である。上記成膜工程の第三工程から最
終工程までを1台の装置で成膜する。この実施例では、
旋回機能を備えたハンドリフター99により、コア3
1、32の着脱が行われる。 本発明による薄膜光電変
換素子製造装置は、ロールツーロール方式、ステッピン
グロール方式のいずれにも適用でき、成膜方法も、プラ
ズマCVD法、スパッタ法のいずれを用いることもでき
る。FIG. 8 is a plan sectional view showing an embodiment of the present invention according to claim 4 which is used for manufacturing the thin film photoelectric conversion device shown in FIG. In order to manufacture the photoelectric conversion element having a multilayer structure shown in FIG. 5, a metal film 11 is formed on the substrate 1 as a first step. In the second step, through holes 16 and 17 penetrate with the metal film 11 on which the substrate 1 is formed.
To form The third step is to form a metal film 11 on the substrate 1.
An a-Si film 12 is formed thereon, and subsequently, as a fourth step,
A transparent conductive film 13 is formed on the a-Si film 12. In the final step, a metal film 14 is formed on the back surface of the substrate 1 formed in the previous step.
Need to be formed. The manufacturing apparatus shown in FIG. 8 includes two rows of transfer systems. The structure of the film forming chamber includes a film forming chamber 22 for forming the a-Si film 12 on the substrate 1 which has been completed up to the second step, a film forming chamber 23 for forming the transparent conductive film 13,
There is a film forming chamber 26 for forming the metal film 14 for each transport system, and both the film forming chambers 22 are formed in one vacuum chamber following the common feed chamber 21. After the chamber 22, it is arranged in an L-shape with the intermediate chamber 27 interposed therebetween. With this arrangement, the maintenance of the film forming chamber 22 with the door 64 opened, and the film forming chamber 2 with the doors 65 and 66 opened.
The maintenance of 3, 26 can be performed without interference between the work areas. Thus, a thin-film photoelectric conversion element manufacturing apparatus having high productivity can be arranged in a small area. In the embodiment, the two transfer systems are arranged in a T-shape which is bent in an L-shape. Good. The structure of the film forming chamber 26 is the same as that of the film forming chamber 23 except that the positions of the high-voltage electrode 41 and the ground electrode 42 are different from those of the substrate 1.
Is symmetric with respect to the plane of. From the third step to the final step of the film forming step, a single apparatus is used to form a film. In this example,
The core 3 is provided by the hand lifter 99 having a turning function.
The attachment and detachment of 1, 32 are performed. The thin-film photoelectric conversion element manufacturing apparatus according to the present invention can be applied to any of a roll-to-roll method and a stepping roll method, and a film forming method can be any of a plasma CVD method and a sputtering method.
【0012】[0012]
【発明の効果】本発明によれば、冷媒を通流して冷却し
たロールの円柱面を接触させて成膜時に温度が上昇して
しわが生じた基板を冷却してしわを取り除き、薄膜光電
変換素子の損傷を防止できた。別の本発明によれば、基
板を巻回した芯体の着脱のために芯体保持体の位置を変
える装着装置および取り出し装置を備えたことにより、
量産を行うために基板の長さが長尺となりコア重量が重
くなっても、一人の作業者で容易に着脱作業が行え、作
業性が向上し作業時間の短縮を図ることができた。According to the present invention, the cylindrical surface of a roll, which has been cooled by flowing a cooling medium, is brought into contact with the roll to cool the substrate having a wrinkled surface due to a rise in temperature during film formation, thereby removing the wrinkled substrate. Element damage was prevented. According to another aspect of the present invention, by providing a mounting device and a removal device that change the position of the core holder for attaching and detaching the core around which the substrate is wound,
Even when the length of the substrate is long and the core weight is heavy for mass production, one worker can easily perform the attaching / detaching operation, thereby improving workability and shortening the operation time.
【0013】さらに別の本発明によれば、搬送径路を二
つの径路を並行にした並列区間と単独区間に分け、並列
区間にしにくい基板の両面への成膜は単独区間で行い、
他の成膜を並列区間で行うことにより、装置占有面積の
節減が可能になった。According to still another aspect of the present invention, the conveying path is divided into a parallel section in which two paths are parallel and a single section, and film formation on both surfaces of the substrate which is difficult to be formed in the parallel section is performed in the single section.
By performing other film formation in the parallel section, the area occupied by the apparatus can be reduced.
【図1】本発明の一実施例の薄膜光電変換素子製造装置
の平面断面図FIG. 1 is a cross-sectional plan view of a thin-film photoelectric conversion element manufacturing apparatus according to an embodiment of the present invention.
【図2】図1の薄膜光電変換素子製造装置の正面断面図FIG. 2 is a front sectional view of the thin film photoelectric conversion device manufacturing apparatus of FIG. 1;
【図3】従来の薄膜光電変換素子製造装置の平面断面図FIG. 3 is a plan sectional view of a conventional thin-film photoelectric conversion element manufacturing apparatus.
【図4】図3の薄膜光電変換素子製造装置の正面断面図FIG. 4 is a front sectional view of the thin-film photoelectric conversion device manufacturing apparatus of FIG. 3;
【図5】本発明の製造装置で製造される薄膜光電変換素
子製造装置の一例の断面図FIG. 5 is a cross-sectional view of an example of a thin-film photoelectric conversion element manufacturing apparatus manufactured by the manufacturing apparatus of the present invention.
【図6】別の本発明の一実施例である薄膜光電変換素子
製造装置の平面断面図FIG. 6 is a plan sectional view of a thin-film photoelectric conversion element manufacturing apparatus according to another embodiment of the present invention;
【図7】図6の薄膜光電変換素子製造装置の正面断面図FIG. 7 is a front sectional view of the thin film photoelectric conversion device manufacturing apparatus of FIG. 6;
【図8】さらに別の本発明の一実施例である薄膜光電変
換素子製造装置の平面断面図FIG. 8 is a cross-sectional plan view of a thin-film photoelectric conversion element manufacturing apparatus according to another embodiment of the present invention.
1 可撓性基板 21 送り室 22、23、26 成膜室 24 巻き取り室 34 送りロール 35 巻き取りロール 36 タッチロール 37 冷却水 41 高電圧電極 42 接地電極 51 基準テーパコーン 52 従動テーパコーン 91 コア装着装置 92 コア取り出し装置 93 ハンドリング機構 94 ロータリーアクチュエータ 95 上下移動アクチュエータ 98 前後移動アクチュエータ DESCRIPTION OF SYMBOLS 1 Flexible substrate 21 Feeding chamber 22, 23, 26 Film forming chamber 24 Winding chamber 34 Feeding roll 35 Winding roll 36 Touch roll 37 Cooling water 41 High voltage electrode 42 Ground electrode 51 Reference taper cone 52 Follower taper cone 91 Core mounting device 92 Core take-out device 93 Handling mechanism 94 Rotary actuator 95 Vertical actuator 98 Front-back actuator
Claims (4)
送ロールと押さえロールとの間を通して面が鉛直面内に
あるようにして搬送される可撓性基板の表面上に、一つ
あるいは複数の成膜室内で基板をはさんで対向する電極
間に電圧を印加して成膜するものにおいて、円柱面が成
膜室を出た基板に接触する、冷媒の通流によって冷却さ
れたロールを備えたことを特徴とする薄膜光電変換素子
の製造装置。1. A method according to claim 1, wherein one or more of the flexible substrates are conveyed in such a manner that the surface is in a vertical plane through a transfer roll and a holding roll which are driven to rotate from a feed chamber to a take-up chamber. Rolls formed by applying a voltage between electrodes facing each other across a substrate in a plurality of film forming chambers, wherein the cylindrical surface is in contact with the substrate exiting the film forming chamber, and is cooled by the flow of a coolant. An apparatus for manufacturing a thin-film photoelectric conversion element, comprising:
換素子の製造装置。2. The apparatus according to claim 1, wherein the refrigerant is water.
送ロールと押さえロールとの間を通して面が鉛直面内に
あるようにして搬送される可撓性基板の表面上に、一つ
あるいは複数の成膜室内で基板をはさんで対向する電極
間に電圧を印加して成膜するものにおいて、送り室およ
び巻き取り室の外に、基板を巻回した芯体の保持体の位
置を芯体軸の水平位置と鉛直位置の間で変換できる回転
手段と、前記保持体の位置を上下に変更できる昇降手段
と、前記保持体の位置を送り室あるいは巻き取り室内の
芯体装着位置との間で変換できる前後移動手段とをそれ
ぞれ備えたことを特徴とする薄膜光電変換素子の製造装
置。3. A flexible substrate which is conveyed so that the surface is in a vertical plane between a conveying roll and a holding roll which are rotationally driven from a feed chamber to a winding chamber, and one or more of the flexible substrates are conveyed. In the case where a film is formed by applying a voltage between electrodes facing each other across a substrate in a plurality of film forming chambers, the position of a core holding body around which the substrate is wound is set outside the feed chamber and the winding chamber. Rotating means that can convert between the horizontal position and the vertical position of the core shaft, elevating means that can change the position of the holder up and down, and the position of the holder with the core mounting position in the feed chamber or winding chamber. And a back-and-forth moving means capable of converting between the two.
モルファスシリコン膜,透明導電膜が積層され、基板の
裏面上に、裏面側金属膜が成膜され、表面側金属膜は、
基板を貫通する第一の穴の中で、裏面側金属膜と接続さ
れ、透明導電膜は、アモルファスシリコン膜,表面側金
属膜,基板を貫通する第二の穴の中で、裏面側金属膜
の、表面側金属膜と接続される部分とは他の部分で接続
され、てなる薄膜光電変換素子の製造装置であって、送
り室から巻き取り室へ回動駆動される搬送ロールと押さ
えロールとの間を通して面が鉛直面内にあるようにして
搬送される可撓性基板上に、複数の成膜室内で基板をは
さんで対向する電極間に電圧を印加して成膜するものに
おいて、2枚の可撓性基板を別個に搬送する二つの搬送
経路を有し、その二つの搬送経路は、共通の送り室を出
て、並行に成膜室を通る並列区間と、その区間に等しい
角度をなして別れて互いに反対の方向に走る単独区間と
を有し、単独区間において基板の表面上に透明導電膜を
成膜する成膜室と基板の裏面上に裏面側金属膜を成膜す
る成膜室を通ることを特徴とする薄膜光電変換素子の製
造装置。4. A surface-side metal film on a surface of a flexible substrate.
The morphous silicon film and the transparent conductive film are laminated,
On the back surface, a back side metal film is formed, and the front side metal film is
In the first hole that penetrates the substrate, it is connected to the backside metal film.
The transparent conductive film is an amorphous silicon film,
Metal film on the back side in the second hole penetrating the metal film and substrate
The part connected to the surface side metal film is connected at another part
A manufacturing apparatus for a thin-film photoelectric conversion device, comprising: a transfer roll rotatably driven from a feed chamber to a take-up chamber; On a flexible substrate, a film is formed by applying a voltage between electrodes facing each other across a substrate in a plurality of film forming chambers, and two transport paths for separately transporting two flexible substrates are provided. The two transport paths have a parallel section exiting the common feed chamber and passing in parallel through the film forming chamber, and a single section separated at an equal angle to the section and running in opposite directions. and, characterized in that through the deposition chamber for forming the back side metal film on the film forming chamber and the back surface of the substrate to <br/> a transparent conductive film is formed on a front surface of the substrate alone section Manufacturing equipment for thin-film photoelectric conversion elements.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6250279A JP2902953B2 (en) | 1994-10-17 | 1994-10-17 | Manufacturing equipment for thin-film photoelectric conversion elements |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6250279A JP2902953B2 (en) | 1994-10-17 | 1994-10-17 | Manufacturing equipment for thin-film photoelectric conversion elements |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH08116077A JPH08116077A (en) | 1996-05-07 |
JP2902953B2 true JP2902953B2 (en) | 1999-06-07 |
Family
ID=17205539
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6250279A Expired - Fee Related JP2902953B2 (en) | 1994-10-17 | 1994-10-17 | Manufacturing equipment for thin-film photoelectric conversion elements |
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Country | Link |
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JP (1) | JP2902953B2 (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4857456B2 (en) * | 2000-05-29 | 2012-01-18 | 凸版印刷株式会社 | Vacuum deposition system |
JP2009038277A (en) * | 2007-08-03 | 2009-02-19 | Fuji Electric Systems Co Ltd | Apparatus for manufacturing thin-film laminated member |
JP2010177344A (en) * | 2009-01-28 | 2010-08-12 | Fuji Electric Holdings Co Ltd | Device for manufacturing thin film laminate |
JP2010177343A (en) * | 2009-01-28 | 2010-08-12 | Fuji Electric Holdings Co Ltd | Device for manufacturing thin film laminate |
JP5126088B2 (en) * | 2009-01-29 | 2013-01-23 | 富士電機株式会社 | Thin film laminate manufacturing equipment |
-
1994
- 1994-10-17 JP JP6250279A patent/JP2902953B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH08116077A (en) | 1996-05-07 |
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